JPH11176990A - Package for housing semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To properly absorb a noise if penetrating in a wiring layer of an insulation board from a wiring conductor of an external electric circuit board, thereby effectively preventing the noise from getting into its semiconductor device to normally operate the semiconductor device for a long time. SOLUTION: The package comprises an insulation board 1 having a semiconductor device mounting part 1a on the top surface and wiring layers 8 led to bottom surface from the mounting part 1a, and cover 2 mounted on the board 1 to seal a semiconductor device mounted on the mounting part. The board 1 is formed by laminating SiO2 -Al2 O3 -MgO-ZnO-B2 O3 crystalline glass- made insulation layer 4, 5, 6, and a lowest insulation layer 4 is a magnetic insulation layer 4a contg. a magnetic material.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a semiconductor device housing package for housing a semiconductor device such as an LSI (Large Scale Integrated Circuit).

[0002]

2. Description of the Related Art Conventionally, a semiconductor element housing package for housing a semiconductor element such as an LSI (large-scale integrated circuit element) is generally made of an electrically insulating material such as an aluminum oxide sintered body and has a substantially central portion on its upper surface. An insulating base provided with a recess for accommodating a semiconductor element, and tungsten, molybdenum led out from the periphery of the recess to the lower surface of the insulating base;
It consists of a plurality of wiring layers made of a high melting point metal powder such as manganese, and a lid. The semiconductor element is mounted and accommodated on the bottom of the concave portion of the insulating base, and each electrode of the semiconductor element is electrically connected to a bonding wire or the like. It is connected to the wiring layer via the connection means, and thereafter, the lid is bonded to the upper surface of the insulating base via an adhesive for sealing, and the semiconductor element is hermetically sealed inside the container composed of the insulating base and the lid. The semiconductor device as a product is completed by being accommodated.

In such a semiconductor device, each electrode of a semiconductor element is connected to an external electric circuit by connecting a part of a wiring layer extending to a lower surface of an insulating base to a wiring conductor of an external electric circuit board. An electric signal is input / output to / from each electrode of the semiconductor element via the wiring conductor of the external electric circuit board.

[0004]

However, in recent years,
Information processing devices have rapidly advanced in performance, with the result that semiconductor devices have been driven at high speeds, making them extremely susceptible to noise. If the wiring layer made of tungsten, molybdenum, etc. provided in the wiring layer easily propagates the harmonic noise, etc., the harmonic noise enters the wiring layer from the wiring conductor of the external electric circuit board. It has a drawback that it propagates into the semiconductor element and causes the semiconductor element to malfunction.

SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned drawbacks, and has as its object to satisfactorily absorb noise even if noise enters from a wiring conductor of an external electric circuit board into a wiring layer provided on an insulating base. It is another object of the present invention to provide a semiconductor element storage package that can effectively prevent noise from directly entering the semiconductor element and can operate the semiconductor element normally for a long period of time.

[0006]

According to the present invention, there is provided an insulating substrate having a mounting portion on an upper surface on which a semiconductor element is mounted, and a plurality of wiring layers extending from the mounting portion to the lower surface; And a lid for sealing the semiconductor element mounted on the mounting portion, wherein the insulating base is made of a plurality of SiO ₂ —Al ₂ O ₃
It is characterized in that a magnetic insulating layer contain a magnetic material on at least the lowermost insulating layer as well as formed by laminating an insulating layer consisting of over MgO over ZnO over B ₂ O ₃ based crystalline glass .

The present invention is also characterized in that the content of the magnetic material in the magnetic insulating layer is 50 to 90% by weight.

Further, the present invention is characterized in that the magnetic insulating layer contains 10 to 40 parts by weight of an inorganic filler by external addition.

According to the package for housing a semiconductor element of the present invention, there is provided an insulating substrate having a mounting portion on which a semiconductor element is mounted on an upper surface, and a plurality of wiring layers attached and formed from the mounting portion to a lower surface. Multiple SiO ₂ -Al ₂ O ₃ -MgO
An insulating layer made of crystalline ZnO-B ₂ O ₃ -based glass is laminated, and at least the lowermost insulating layer contains a magnetic material to form a magnetic insulating layer. Even if noise tries to enter the wiring layer, the noise is converted into thermal energy by the magnetic material contained in the magnetic insulating layer located at the bottom of the insulating base and absorbed, and as a result, the noise enters the wiring layer. It does not propagate to the semiconductor element, and the semiconductor element can always operate normally.

Further, according to the package for housing a semiconductor element of the present invention, the insulating layer constituting the insulating base is made of SiO ₂ -Al.
_{It is made of 2} O ₃ —MgO—ZnO—B ₂ O ₃ based crystalline glass, and the SiO ₂ —Al ₂ O ₃ —MgO—Zn
OB ₂ O ₃ crystalline glass has a firing temperature of 800-
Since the temperature is as low as 1050 ° C., the magnetic material does not lose its magnetism even when the crystalline glass is mixed with the magnetic material and fired, and the noise can be well absorbed.

At the same time, SiO ₂ —Al ₂ O ₃ —MgO—Z
Since the firing temperature of the nO—B ₂ O ₃ crystalline glass is low, it is possible to form a wiring layer made of a material having a low melting point, such as copper, silver, and gold, and a low conduction resistance by simultaneous firing. When an electric signal propagates through the layer, it is possible to effectively prevent attenuation or the like from occurring in the electric signal, and to operate the semiconductor element accurately.

[0012] SiO ₂ over Al ₂ further constituting the insulating substrate
When an inorganic filler is externally added to the O ₃ —MgO—ZnO—B ₂ O ₃ -based crystalline glass in the range of 10 to 40 parts by weight, SiO ₂ —Al ₂ O ₃ —MgO—ZnO—B ₂ O
The mechanical strength of ₃ based crystalline glass becomes stronger, whereby it is possible to effectively prevent the damage even if an external force or the like is applied is generated in the insulating base.

[0013]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, the present invention will be described in detail with reference to the accompanying drawings. FIG. 1 shows an embodiment of a package for accommodating a semiconductor element according to the present invention, wherein 1 is an insulating base, and 2 is a lid. The insulating base 1 and the lid 2 constitute a container for housing the semiconductor element therein.

The insulating substrate 1 has a recess 1a in the center of the upper surface in which the semiconductor element 3 is placed and accommodated, and the semiconductor element 3 is bonded and fixed to the bottom of the recess 1a via an adhesive.

The insulating substrate 1 is made of three SiO ₂ —Al ₂
O ₃ and the over MgO over ZnO over B ₂ O ₃ based dielectric layer 4, 5 and 6 made of crystalline glass is formed by laminating integrally,
For example, SiO ₂ , Al ₂ O ₃ , MgO, ZnO, B ₂
O ₃ in a suitable organic solvent, solvents, together form a mud漿状was added and mixed plasticizer, a plurality of green sheets (green and formed into a sheet of該泥漿物by a doctor blade method or calendar roll method, etc. After that, the green sheet is manufactured by subjecting the green sheet to an appropriate punching process, stacking the green sheet up and down in a predetermined order, and firing at a temperature of 800 to 1050 ° C.

The insulating substrate 1 is provided with a plurality of wiring layers 8 extending from the periphery of the concave portion 1a to the lower surface through through holes 7 provided in the insulating substrate 1, and the wiring layers 8 are housed inside. The electrodes of the semiconductor element 3 are electrically connected to an external electric circuit, and the electrodes of the semiconductor element 3 are connected to the periphery of the concave portion 1a of the wiring layer 8 through an electrical connection means 9 such as a bonding wire. Electrically connected to the insulating substrate 1
An external lead pin 10 connected to a wiring conductor of an external electric circuit board is joined to a portion led out to the lower surface of the external electric circuit board via a brazing material.

The wiring layer 8 is made of a metal material such as copper, silver, and gold having an electrical resistivity of 3 μΩ · cm or less. For example, the wiring layer 8 is obtained by adding a suitable organic solvent and a solvent to a metal powder such as copper. By printing and applying a metal paste in a predetermined pattern by a well-known screen printing method or the like in advance on the upper surface of the green sheet serving as the insulating substrate 1 and in the holes formed in the green sheet by a perforation process, the periphery of the concave portion of the insulating substrate 1 is formed. To the lower surface. In this case, the wiring layer 8 made of a metal material such as copper, silver, and gold is made of SiO ₂ —Al ₂ O ₃
Since the sintering temperature of the insulating substrate 1 made of —MgO—ZnO—B ₂ O ₃ crystalline glass is as low as 800 to 1050 ° C.,
When the insulating substrate 1 is fired, metal powder such as copper or silver of the metal paste does not diffuse, and can be formed at a predetermined position on the insulating substrate 1 by simultaneous firing with the insulating substrate 1.

Further, since the electrical resistivity of copper, silver, gold and the like forming the wiring layer 8 is as low as 3 μΩ · cm or less, even if the electric signal propagates through the wiring layer 8, the electric signal is attenuated. Can be effectively prevented, and as a result, it is possible to accurately send and receive electric signals to and from the semiconductor element 3, and the semiconductor element 3 can always be normally operated.

When the wiring layer 8 is made of copper or silver, gold or the like having excellent corrosion resistance is applied to the exposed surface to a thickness of 1.0 to 20 μm by a plating method.
Can be effectively prevented, and the connection between the wiring layer 8 and the electrical connection means 9 such as a bonding wire and the bonding of the external lead pins 10 to the wiring layer 8 can be strengthened. Therefore, when the wiring layer 8 is made of copper or silver, it is preferable that a metal having excellent corrosion resistance such as gold is applied to the exposed surface to a thickness of 1.0 to 20 μm by plating.

The external lead pins 10 joined to the wiring layer 8 on the lower surface of the insulating base 1 are made of a metal material such as an iron-nickel-cobalt alloy, an iron-nickel alloy, or copper. Used to electrically connect to an electric circuit.

The external lead pin 10 is formed into a predetermined shape by employing a conventionally known metal working method such as a rolling method or a punching method for an ingot (a lump) such as an iron-nickel-cobalt alloy.

The external lead pin 10 is made of, for example, a brazing material made of a metal material having a melting point of 500 ° C. or less, specifically,
10 to 50% by weight of indium or tin, 10 to 70%
Weight percent silver, 10 to 75 weight percent antimony,
Alloy consisting of less than 15% by weight of copper; alloy consisting of 15 to 25% by weight of tin and 75 to 85% by weight of gold;
The wiring layer 8 is formed on the lower surface of the insulating substrate 1 by using an alloy composed of germanium of 85% by weight and 85 to 90% by weight of gold, an alloy of lead and at least one of tin, indium, antimony, and bismuth. Joined to.

When the external lead pins 10 are joined to the wiring layer 8 on the lower surface of the insulating base 1 using a brazing material made of a metal material having a melting point of 500 ° C. or less, the brazing material at the time of brazing is heated and melted. The temperature is low, and the insulating base 1 is not significantly deformed by the heat of heating and melting the brazing material. This effectively prevents the wiring layer 8 provided on the insulating base 1 from being disconnected or the like. it can.

Thus, according to the above-mentioned package for accommodating a semiconductor element, the semiconductor element 3 is mounted and fixed in the concave portion 1a of the insulating base 1 via an adhesive, and each electrode of the semiconductor element 3 is electrically connected with a bonding wire or the like. The lid 2 is connected to the wiring layer 8 via the means 9 and then the lid 2 is joined to the upper surface of the insulating base 1 via a sealing member such as glass, resin, brazing material, or the like. A semiconductor device as a product is obtained by hermetically sealing the semiconductor element 3 inside the container made of.

In this semiconductor device, when the external lead pins 10 are connected to wiring conductors (not shown) of an external electric circuit board via solder or the like, the electrodes of the semiconductor element 3 housed in the container are connected to the external lead pins 10 and the wiring layer. The connection between the semiconductor element 3 and the wiring conductor of the external electric circuit board becomes possible through the connection to the wiring conductor of the external electric circuit board via the electric connection means 8 and the electric connection means 9.

In the present invention, each of the insulating layers 4, 5, and 6 constituting the insulating base 1 is made of SiO ₂ —Al ₂ O ₃ —MgO—Z
It is important to form the nO—B ₂ O ₃ crystalline glass.

This SiO ₂ —Al ₂ O ₃ —MgO—Zn
OB ₂ O ₃ crystalline glass is, for example, SiO ₂ : 4
0-46 wt%, Al ₂ O _3: 25~30 wt%, Mg
O: 8 to 13% by weight, ZnO: 6 to 9% by weight, B
₂ O ₃ : formed at 8 to 11% by weight.

The above-mentioned SiO ₂ —Al ₂ O ₃ —MgO—Zn
The OB ₂ O ₃ -based crystalline glass is made of garnet (ZnO.Al ₂ O ₃ ), cordierite (2MgO.
2Al ₂ O _3), spinel-type crystal phase (MgO · Al ₂ O
₃ , a crystal phase such as ZnO.Al ₂ O ₃ ) is generated, and the generation of these crystal phases has the property that the strength of the insulating substrate 1 is improved.

The above SiO ₂ -Al ₂ O ₃ -MgO-Zn
OB ₂ O ₃ crystalline glass has a firing temperature of 800-
Since the wiring layer 8 has a low melting point, such as copper, silver, or gold, and a low conduction resistance because of its low temperature of 1050 ° C.,
When the electric signal propagates through the wiring layer 8, it is possible to effectively prevent the electric signal from attenuating and the like, and to operate the semiconductor element 3 accurately.

The SiO ₂ —Al ₂ O ₃ —MgO—ZnO—B ₂ O ₃ crystalline glass has a relative dielectric constant of about 5
(At room temperature of 1 MHz), even if the electric signal is propagated to the wiring layer 8 formed on the insulating base 1, no propagation delay is caused, and as a result, the electric signal is propagated to the wiring layer 8 at high speed. Becomes possible.

The above SiO ₂ -Al ₂ O ₃ -MgO
Over ZnO over B ₂ O ₃ based crystalline glass, the amount of SiO 4
If the amount is less than 0% by weight or more than 46% by weight, the firing temperature of the SiO ₂ —Al ₂ O ₃ —MgO—ZnO—B ₂ O ₃ based crystalline glass becomes high, and the wiring layer is made of a metal material such as copper. 8 becomes difficult to fire simultaneously. Therefore, S
Preferably, the amount of iO ₂ is in the range of 40-46% by weight.

When the amount of Al ₂ O ₃ is less than 25% by weight or more than 30% by weight, SiO ₂ —Al ₂ O ₃ —Mg
The sintering temperature of the O—ZnO—B ₂ O ₃ -based crystalline glass becomes high, and it becomes difficult to simultaneously sinter the wiring layer 8 made of a metal material such as copper. Therefore, the amount of Al ₂ O ₃ is 2
It is preferable to set the range of 5 to 30% by weight.

When the amount of MgO is less than 8% by weight, the sintering is performed to form SiO ₂ —Al ₂ O ₃ —MgO—ZnO—B.
_The cordierite (2MgO.2Al) formed when the insulating substrate 1 made of ₂ O ₃ -based crystalline glass is produced.
The amount of ₂ O ₃ ) is small and the strength of the insulating substrate 1 cannot be greatly improved.
iO ₂ over Al ₂ O ₃ that is baked over MgO over ZnO over B ₂ O ₃ based wiring layer 8 made of a metal material such as copper is as firing temperature of the crystallizable glass is high at the same time difficult. Therefore, the amount of MgO is preferably set in the range of 8 to 13% by weight.

If the amount of ZnO is less than 6% by weight, the material is calcined to form SiO ₂ —Al ₂ O ₃ —MgO—ZnO—B
When manufacturing the insulating substrate 1 made of ₂ O ₃ -based crystalline glass, the amount of garnet (ZnO.Al ₂ O ₃ ) generated is small, and the strength of the insulating substrate 1 cannot be greatly improved. If the content exceeds% by weight, SiO ₂ —Al ₂ O
₃ over MgO over ZnO over B ₂ O ₃ system firing temperature of the crystalline glass is made of a metal material such as copper becomes high wiring layer 8
At the same time. Therefore, the amount of ZnO is preferably set in the range of 6 to 9% by weight.

Further in fabricating the insulating base 1, the amount of B ₂ O ₃ is made of SiO ₂ over Al ₂ O ₃ over MgO over ZnO over B ₂ O ₃ based crystalline glass by firing less than 8 wt%, gahnite _{(ZnO · Al 2 O 3)} , cordierite _{(2MgO · 2Al 2 O 3)} , spinel-type crystal phase (M
gO.Al ₂ O ₃ , ZnO.Al ₂ O ₃ ), etc., are excessively generated, and the insulating substrate 1 becomes porous, so that the reliability of hermetic sealing of the container is greatly reduced. If the content is more than 10% by weight, the chemical resistance is greatly reduced, and the reliability of the semiconductor blocking package is reduced. Therefore, B
Preferably, the amount of ₂ O ₃ is in the range of 8 to 11% by weight.

In the present invention, it is important that at least the lowermost one of the insulating layers 4, 5, and 6 constituting the insulating base 1 contains a magnetic material to form the magnetic insulating layer 4 a. .

The lowermost layer of the insulating substrate 1 is a magnetic insulating layer 4a.
When the external lead pins 10 are connected to the wiring conductor of the external electric circuit board and electric signals are taken in and out between the semiconductor element 3 and the external electric circuit, noise is generated in the wiring layer 8 by the wiring conductor of the external electric circuit board. Even if the noise enters, the noise is generated by the magnetic insulating layer 4 located at the bottom
a is not converted into heat energy by the magnetic material contained in a and absorbed and does not enter the wiring layer 8, and as a result,
The noise hardly propagates through the wiring layer 8 and enters the semiconductor element 3, so that the semiconductor element 3 can always operate normally.

[0038] Incidentally, the magnetic insulating layer 4a is during firing since the firing temperature of the SiO ₂ chromatography Al ₂ O ₃ over MgO over ZnO over B ₂ O ₃ based crystalline glass is 800 to 1050 ° C. and lower,
The magnetism of the magnetic material is not lost, so that noise entering the wiring layer 8 can be favorably absorbed.

The magnetic material contained in the magnetic insulating layer 4a is ZnFe ₂ O ₄ , MnFe ₂ O ₄ , FeFe ₂
O ₄ , CoFe ₂ O ₄ , NiFe ₂ O ₄ , CuFe ₂ O
₄ is preferably used. For example, ZnFe ₂ O is added to a green sheet that becomes the insulating layer 4 by firing.
₄ , MnFe ₂ O ₄ , FeFe ₂ O ₄ , CoFe
By adding and containing a magnetic powder composed of at least one of ₂ O ₄ , NiFe ₂ O ₄ and CuFe ₂ O ₄ , the magnetic powder is contained in the insulating layer 4 and becomes a magnetic insulating layer 4 a.

The magnetic insulating layer 4a is made of a magnetic material of 90%.
When the content of the crystalline glass is more than 10% by weight, in other words, when the amount of the SiO ₂ —Al ₂ O ₃ —MgO—ZnO—B ₂ O ₃ based crystalline glass is less than 10% by weight, SiO ₂ —Al ₂ O ₃ —MgO—Zn
The sintering temperature of the OB ₂ O ₃ -based crystalline glass becomes high, making it difficult to simultaneously sinter the wiring layer 8 made of a metal material such as copper, and the magnetic material is less than 50% by weight, in other words, SiO 2 ₂ -Al ₂ O ₃ -MgO-ZnO-B ₂
When the amount of the O ₃ -based crystalline glass exceeds 50% by weight, it is not possible to prevent the noise from entering the wiring layer 8 from the wiring conductor of the external electric circuit board satisfactorily, causing the semiconductor element 3 to malfunction. Would. Therefore, the magnetic insulating layer 4a
It is preferable that the amount of the magnetic material be in the range of 50 to 90% by weight.

Further, the magnetic material has a particle size of 0.5 μm.
If it is less than the above, firing will result in SiO ₂ --Al ₂ O ₃ --Mg
When manufacturing the insulating substrate 1 made of O—ZnO—B ₂ O ₃ based crystalline glass, SiO ₂ —Al ₂ O ₃ —MgO—Zn
The reaction with the OB ₂ O ₃ -based crystalline glass progresses, and the residual ratio of the magnetic material decreases, making it impossible to effectively absorb noise. If it exceeds 10 μm, SiO ₂ -Al ₂
O ₃ over the firing temperature of MgO over ZnO over B ₂ O ₃ based crystalline glass becomes high and becomes to difficult to firing simultaneously with the wiring layer 8 made of a metal material such as copper. Therefore, the magnetic material preferably has a particle size in the range of 0.5 μm to 10 μm.

Further, the magnetic insulating layer 4 and the insulating layers 5 and 6 constituting the insulating base 1 have an inorganic filler,
Specifically, when 10 to 40 parts by weight of powder of alumina, silica, silicon nitride, aluminum nitride, etc. is added and added, the mechanical strength is greatly improved, and application of an external force may cause damage or the like. Effectively prevented. Therefore, the mechanical strength of the insulating substrate 1 is improved, and the application of an external force so as not to cause breakage or the like is made of a magnetic insulating material made of SiO ₂ —Al ₂ O ₃ —MgO—ZnO—B ₂ O ₃ crystalline glass. It is preferable to add 10 to 40 parts by weight of an inorganic filler to the layer 4 and the insulating layers 5 and 6 by external addition.

When the magnetic insulating layer 4 and the insulating layers 5 and 6 constituting the insulating substrate 1 contain an inorganic filler, the inorganic filler may be made of glass ceramic if the particle size of the inorganic filler is in the range of 0.5 to 5 μm. The mechanical strength of the insulating base 1 composed of the magnetic insulating layer 4 and the insulating layers 5 and 6 can be uniformly improved by being uniformly dispersed and contained in the sintered body. Therefore, it is preferable that the particle diameter of the inorganic filler be in the range of 0.5 to 5 μm.

It should be noted that the present invention is not limited to the above-described embodiment, and various changes can be made without departing from the scope of the present invention. Is connected to a wiring conductor of an external electric circuit board, so that each electrode of the semiconductor element 3 is connected to the external electric circuit. 8 may be directly connected to the wiring conductor of the external electric circuit board.

In the above embodiment, the insulating base 1 is formed of three insulating layers 4, 5, and 6. However, the insulating base 1 may be formed of two insulating layers or may be formed of four or more insulating layers. Is also good.

Furthermore, in the above-described embodiment, only the lowermost insulating layer 4 of the insulating base 1 is the magnetic insulating layer 4a. However, a magnetic insulating layer may be formed by including a magnetic material in all the insulating layers.

[0047]

According to the semiconductor device housing package of the present invention, the semiconductor device has a mounting portion on which the semiconductor device is mounted on the upper surface,
A plurality of SiO ₂ —Al ₂ O ₃ —Mg are formed on the insulating substrate, on which a plurality of wiring layers are formed from the mounting portion to the lower surface.
O over ZnO over B ₂ O ₃ system to contain a magnetic material on at least the lowermost insulating layer wiring conductor of the external electric circuit board since it has a magnetic insulating layer with an insulating layer formed by stacking comprising a crystal glass Even if noise is more likely to enter the wiring layer, the noise is converted into thermal energy by the magnetic material contained in the magnetic insulating layer located at the bottom of the insulating base and absorbed, and as a result, the noise enters the wiring layer. Therefore, the semiconductor device can always be normally operated without propagating to the semiconductor device.

Further, according to the package for housing a semiconductor element of the present invention, the insulating layer constituting the insulating base is made of SiO ₂ -Al.
_{It is made of 2} O ₃ —MgO—ZnO—B ₂ O ₃ based crystalline glass, and the SiO ₂ —Al ₂ O ₃ —MgO—Zn
OB ₂ O ₃ crystalline glass has a firing temperature of 850 to 850.
Since the temperature is as low as 1000 ° C., the magnetic material does not lose its magnetism even if the crystalline material is mixed with the magnetic material and fired, so that noise can be favorably absorbed.

Simultaneously, SiO ₂ —Al ₂ O ₃ —MgO—Z
Since the firing temperature of the nO—B ₂ O ₃ crystalline glass is low, it is possible to form a wiring layer made of a material having a low melting point, such as copper, silver, and gold, and a low conduction resistance by simultaneous firing. When an electric signal propagates through the layer, it is possible to effectively prevent attenuation or the like from occurring in the electric signal, and to operate the semiconductor element accurately.

The SiO ₂ chromatography Al ₂ further constituting the insulating substrate
When an inorganic filler is externally added to the O ₃ —MgO—ZnO—B ₂ O ₃ -based crystalline glass in the range of 10 to 40 parts by weight, SiO ₂ —Al ₂ O ₃ —MgO—ZnO—B ₂ O
The mechanical strength of ₃ based crystalline glass becomes stronger, whereby it is possible to effectively prevent the damage even if an external force or the like is applied is generated in the insulating base.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view showing one embodiment of a semiconductor element storage package according to the present invention.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 ... Insulating base 2 ... Lid 3 ... Semiconductor element 4, 5, 6 ... Insulating layer 4a ... Magnetic insulating layer

Claims (3)

[Claims] An insulating base having a plurality of wiring layers extending from the mounting portion to a lower surface; and an insulating base attached to the insulating base, the mounting portion being provided on the mounting portion. A package for enclosing a semiconductor element to be mounted, comprising a lid for sealing a semiconductor element to be mounted, wherein the insulating base is made of a plurality of SiO ₂ —Al ₂ O ₃ —MgO—ZnO—B ₂ O ₃
A package for housing a semiconductor element, wherein a magnetic insulating layer is formed by laminating insulating layers made of a crystalline glass and at least a lowermost insulating layer contains a magnetic material. 2. The package according to claim 1, wherein the content of the magnetic material in the magnetic insulating layer is 50 to 90% by weight. 3. The package according to claim 1, wherein the magnetic insulating layer contains 10 to 40 parts by weight of an inorganic filler by external addition.