JPH11172415A - Transparent conductive film - Google Patents

Abstract

PROBLEM TO BE SOLVED: To obtain an electrode material excellent in durability and etching performance and suitable for a liq. crystal display or the like. SOLUTION: In a transparent conductive film in which, on the surface of a high molecular film base material or a high molecular film base material coated with a resin, indium-silver oxides are formed by a sputtering method using an indium-tin oxide target material contg. 9 to 11 wt.% tin and having >=95% relative density, he relative elemental concn. of oxygen in the film is regulated to 45 to 50 mol.%.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a transparent conductive film used for a liquid crystal display or the like, and more particularly, to a transparent conductive film containing indium tin oxide as a main component on a polymer film or a resin coating provided thereon. The present invention relates to a transparent conductive film formed by laminating conductive films.

[0002]

2. Description of the Related Art Indium tin oxide (hereinafter referred to as ITO)
Transparent conductive films composed of a film containing as a main component are widely used as electrode materials for liquid crystal displays and the like, utilizing the properties of high conductivity and high transparency. The ITO film is formed by vacuum deposition, sputtering, ion plating, or the like, but the sputtering method is generally used because good film characteristics can be obtained. Since these electrode materials are often accompanied by an etching process, good etching characteristics are required, and at the same time, high durability performance that can withstand an assembly process of a liquid crystal display or the like is required.

[0003]

SUMMARY OF THE INVENTION The object of the present invention is to provide an IT
An object of the present invention is to provide an electrode material suitable for a liquid crystal display or the like by improving the durability performance and etching performance of an O film.

[0004]

According to the present invention, indium having a tin content of 9 to 11 wt% and a relative density of 95% or more is formed on a polymer film substrate or a resin coated polymer film substrate. In a transparent conductive film in which indium tin oxide is formed by a sputtering method using a tin oxide target material, the relative element concentration of oxygen in the film is 45 to 45.
The transparent conductive film is 50 mol%.

[0005]

BEST MODE FOR CARRYING OUT THE INVENTION As the polymer film used in the present invention, polyethersulfone, polycarbonate and the like are preferable because they have optical characteristics suitable for liquid crystal display applications. The relative element concentration of oxygen in the ITO film of the present invention is 45 to 50 mol%. If it exceeds 50 mol%, the etching characteristics of the ITO film deteriorate. 45m
If the amount is less than ol%, a lower oxide is generated and the light transmittance is significantly lacked. For use in optical applications, the relative element concentration of oxygen must be 45 mol% or more.

[0006]

EXAMPLES The present invention will be described below with reference to examples. Example 1 A polyethersulfone film was coated with an acrylic resin, and a substrate temperature of 50% was formed on the polyethersulfone film by using an ITO target having Sn of 10 wt% and a relative density of 97%.
An ITO film having a thickness of 300 ° was formed by DC sputtering at ℃. The amount of oxygen introduced during the film formation was O ₂ /Ar=3.63.
× 10 ^-2 . The relative element concentration of oxygen in the ITO film measured by ESCA after etching at a depth of 10 ° was 48 mol%. Example 2 A polyethersulfone film was coated with an acrylic resin, and a substrate temperature of 50% was formed on the polyethersulfone film using an ITO target of Sn 10 wt% and a relative density of 97%.
An ITO film having a thickness of 600 ° was formed by DC sputtering at ℃. The amount of oxygen introduced during the film formation was O ₂ /Ar=2.91.
× 10 ^-2 . The relative element concentration of oxygen in the ITO film measured by ESCA after etching at a depth of 10 ° was 46 mol%.

Comparative Example 1 An acrylic resin was coated on a polyethersulfone film, and Sn1 was coated thereon.
300 ° C. by DC sputtering at a substrate temperature of 50 ° C. using an ITO target of 0 wt% and a relative density of 97%.
Was formed. The amount of oxygen introduced during film formation is O ₂ / A
r = 4.81 × 10 ⁻² The relative element concentration of oxygen in the ITO film measured by ESCA after etching at a depth of 10 ° was 51 mol%. << Comparative Example 2 >> A polyethersulfone film was coated with an acrylic resin, and a substrate temperature of 50 was applied using an ITO target of Sn 10 wt% and a relative density of 97%.
An ITO film having a thickness of 300 ° was formed by DC sputtering at ℃. The amount of oxygen introduced during the film formation was O ₂ /Ar=2.52
× 10 ^-2 . The relative element concentration of oxygen in the ITO film measured by ESCA after etching at a depth of 10 ° was 44 mol%. Table 1 shows the evaluation results of Examples and Comparative Examples, and Table 2 shows the evaluation methods.

[0008]

[Table 1]

[0009]

[Table 2]

[0010]

According to the present invention, a transparent conductive film having excellent durability and etching properties can be obtained.

Claims (1)

[Claims] 1. An indium tin oxide target material having a tin content of 9 to 11 wt% and a relative density of 95% or more is used on a polymer film substrate or a resin film-coated polymer film substrate. A transparent conductive film, wherein a relative element concentration of oxygen in the transparent conductive film for forming indium tin oxide by a sputtering method is 45 to 50 mol%.