JPH11168074A - Dicing method of piezoelectric material substrate - Google Patents
Dicing method of piezoelectric material substrateInfo
- Publication number
- JPH11168074A JPH11168074A JP33285497A JP33285497A JPH11168074A JP H11168074 A JPH11168074 A JP H11168074A JP 33285497 A JP33285497 A JP 33285497A JP 33285497 A JP33285497 A JP 33285497A JP H11168074 A JPH11168074 A JP H11168074A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- single unit
- sucking
- dicing
- vacuum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 68
- 238000000034 method Methods 0.000 title claims abstract description 9
- 239000000463 material Substances 0.000 title abstract 3
- 239000002313 adhesive film Substances 0.000 description 8
- 238000007796 conventional method Methods 0.000 description 1
Landscapes
- Dicing (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、圧電体基板のダイ
シング方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for dicing a piezoelectric substrate.
【0002】[0002]
【従来の技術】図2は、従来技術によるダイシング方法
である。2. Description of the Related Art FIG. 2 shows a conventional dicing method.
【0003】図2において、1は圧電体基板、2は基板
吸着用の板、3は基板吸着用の穴、4はダイシングの
溝、5は真空吸着方向、6はダイシング刃、7は単体基
板、8は粘着フィルムである。In FIG. 2, 1 is a piezoelectric substrate, 2 is a plate for sucking a substrate, 3 is a hole for sucking a substrate, 4 is a dicing groove, 5 is a vacuum suction direction, 6 is a dicing blade, and 7 is a single substrate. , 8 are adhesive films.
【0004】従来の技術としては、圧電体基板1の裏面
に粘着フィルム8を貼付け、その粘着フィルム8の厚み
を残してフルダイシングを行っていた。この場合、フル
ダイシング後の次工程として単体基板7と粘着フィルム
8とを剥離する作業が必要である。As a conventional technique, an adhesive film 8 is attached to the back surface of the piezoelectric substrate 1, and full dicing is performed while leaving the thickness of the adhesive film 8. In this case, an operation of peeling off the single substrate 7 and the adhesive film 8 is required as a next step after full dicing.
【0005】[0005]
【発明が解決しようとする課題】従来は、フルダイシン
グ後の単体基板と粘着フィルムを剥離する作業が必要で
あった。Conventionally, it has been necessary to peel off the adhesive film from the single substrate after full dicing.
【0006】本発明は、上記のような欠点を除去し、圧
電体基板のフルダイシング後、単体基板に完全に分割す
ることが可能であり、単体基板と粘着フィルムを剥離す
る作業が不要となる。これにより作業効率が向上する。According to the present invention, it is possible to eliminate the above-mentioned drawbacks and completely separate the piezoelectric substrate into a single substrate after full dicing of the piezoelectric substrate, so that the operation of peeling off the single substrate and the adhesive film becomes unnecessary. . Thereby, work efficiency is improved.
【0007】[0007]
【課題を解決するための手段】本発明は、上記の目的を
達成するために、ダイシングする単体基板の底面を各単
体基板個別に真空吸着しフルダイシングするものであ
る。According to the present invention, in order to achieve the above object, the bottom surface of a single substrate to be diced is individually vacuum-adsorbed to each single substrate and full dicing is performed.
【0008】[0008]
【発明の実施の形態】以下、本発明の一実施例を図1を
用いて説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment of the present invention will be described below with reference to FIG.
【0009】図1は、本発明を用いた圧電体基板のダイ
シング方法である。FIG. 1 shows a method of dicing a piezoelectric substrate using the present invention.
【0010】図1において、1は圧電体基板、2は基板
吸着用の板、3は基板吸着用の穴、4はダイシングの
溝、5は真空吸着方向、6はダイシング刃、7は単体基
板である。In FIG. 1, reference numeral 1 denotes a piezoelectric substrate, 2 denotes a substrate suction plate, 3 denotes a substrate suction hole, 4 denotes a dicing groove, 5 denotes a vacuum suction direction, 6 denotes a dicing blade, and 7 denotes a single substrate. It is.
【0011】次にこれらの構造、作用について説明す
る。Next, these structures and functions will be described.
【0012】基板吸着用の板2に各単体基板7を個別に
真空吸着できるように複数個の基板吸着用の穴3を設け
る。ここで真空吸着方向5で各単体基板7を吸着するこ
とによりダイシング刃6で圧電体基板1をダイシングす
る場合、各単体基板7が基板吸着用の穴3により真空吸
着されているためフルダイシング途中の各単体基板7が
分散することがなくフルダイシングする。A plurality of substrate suction holes 3 are provided in the substrate suction plate 2 so that each single substrate 7 can be individually vacuum suctioned. Here, when the piezoelectric substrate 1 is diced by the dicing blade 6 by sucking each single substrate 7 in the vacuum suction direction 5, since each single substrate 7 is sucked in vacuum by the hole 3 for sucking the substrate, a full dicing process is performed. Full dicing is performed without dispersing each single substrate 7.
【0013】[0013]
【発明の効果】以上のように本発明によれば、フルダイ
シングにより、圧電体基板1を単体基板7に完全に分割
することが可能で、従来技術のような単体基板7と粘着
フィルム8を剥離する作業が不要となり作業効率の向上
が図れる。また基板吸着用の穴の間隔は、単体基板7の
寸法により変化するが、基板吸着用の板2を複数個準備
し、それぞれ基板吸着用の穴3の間隔を単体基板7に合
ったものとすることにより、この基板吸着用の板2を交
換するだけで、どのような寸法の単体基板でもフルダイ
シングすることが可能である。As described above, according to the present invention, the piezoelectric substrate 1 can be completely divided into the single substrate 7 by full dicing, and the single substrate 7 and the adhesive film 8 as in the prior art can be separated. The work for peeling is not required, and the work efficiency can be improved. The distance between the holes for sucking the substrate varies depending on the dimensions of the single substrate 7, but a plurality of plates 2 for sucking the substrate are prepared, and the distance between the holes 3 for sucking the substrate is adjusted to the distance between the holes 3 for the single substrate. By doing so, it is possible to perform full dicing on a single substrate of any size simply by replacing the substrate suction plate 2.
【図1】本発明を用いた圧電体基板のダイシング方法。FIG. 1 shows a method of dicing a piezoelectric substrate using the present invention.
【図2】従来技術によるダイシング方法。FIG. 2 shows a conventional dicing method.
1:圧電体基板、2:基板吸着用の板、3:基板吸着用
の穴、4:ダイシングの溝、5:真空吸着方向、6:ダ
イシング刃、7:単体基板、8:粘着フィルム。1: piezoelectric substrate, 2: substrate suction plate, 3: substrate suction hole, 4: dicing groove, 5: vacuum suction direction, 6: dicing blade, 7: single substrate, 8: adhesive film.
Claims (1)
することにより、前記圧電基板を基板吸着板に固定し、
該圧電体基板のフルダイシングを行うことを特徴とする
圧電基板のダイシング方法。In the dicing of a piezoelectric substrate, a single substrate to be divided is sucked from the bottom surface of the substrate individually to fix the piezoelectric substrate to a substrate suction plate.
A dicing method for a piezoelectric substrate, comprising performing full dicing of the piezoelectric substrate.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP33285497A JPH11168074A (en) | 1997-12-03 | 1997-12-03 | Dicing method of piezoelectric material substrate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP33285497A JPH11168074A (en) | 1997-12-03 | 1997-12-03 | Dicing method of piezoelectric material substrate |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH11168074A true JPH11168074A (en) | 1999-06-22 |
Family
ID=18259554
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP33285497A Pending JPH11168074A (en) | 1997-12-03 | 1997-12-03 | Dicing method of piezoelectric material substrate |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH11168074A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1202336A1 (en) * | 1999-07-02 | 2002-05-02 | Matsushita Electric Industrial Co., Ltd. | Electric charge generating semiconductor substrate bump forming device, method of removing electric charge from electric charge generating semiconductor substrate, device for removing electric charge from electric charge generating semiconductor substrate, and electric charge generating semiconducto |
-
1997
- 1997-12-03 JP JP33285497A patent/JPH11168074A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1202336A1 (en) * | 1999-07-02 | 2002-05-02 | Matsushita Electric Industrial Co., Ltd. | Electric charge generating semiconductor substrate bump forming device, method of removing electric charge from electric charge generating semiconductor substrate, device for removing electric charge from electric charge generating semiconductor substrate, and electric charge generating semiconducto |
EP1202336A4 (en) * | 1999-07-02 | 2004-06-23 | Matsushita Electric Ind Co Ltd | Electric charge generating semiconductor substrate bump forming device, method of removing electric charge from electric charge generating semiconductor substrate, device for removing electric charge from electric charge generating semiconductor substrate, and electric charge generating semiconducto |
US6818975B1 (en) | 1999-07-02 | 2004-11-16 | Matsushita Electric Industrial Co., Ltd. | Electric charge generating semiconductor substrate bump forming device, method of removing electric charge from electric charge generating semiconductor substrate device for removing electric charge from electric charge generating semiconductor substrate, and electric charge generating semiconductor substrate |
US7014092B2 (en) | 1999-07-02 | 2006-03-21 | Matsushita Electric Industrial Co., Ltd. | Bump forming apparatus for charge appearance semiconductor substrate, charge removal method for charge appearance semiconductor substrate, charge removing unit for charge appearance semiconductor substrate, and charge appearance semiconductor substrate |
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