JPH11163487A - Conductive paste for ceramic multilayered circuit board - Google Patents
Conductive paste for ceramic multilayered circuit boardInfo
- Publication number
- JPH11163487A JPH11163487A JP33137397A JP33137397A JPH11163487A JP H11163487 A JPH11163487 A JP H11163487A JP 33137397 A JP33137397 A JP 33137397A JP 33137397 A JP33137397 A JP 33137397A JP H11163487 A JPH11163487 A JP H11163487A
- Authority
- JP
- Japan
- Prior art keywords
- powder
- particle diameter
- circuit board
- conductive paste
- warpage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000919 ceramic Substances 0.000 title claims abstract description 30
- 239000000843 powder Substances 0.000 claims abstract description 56
- 239000002245 particle Substances 0.000 claims abstract description 35
- 238000000034 method Methods 0.000 claims description 14
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 239000004020 conductor Substances 0.000 abstract description 5
- 238000000889 atomisation Methods 0.000 abstract description 3
- 239000011888 foil Substances 0.000 abstract description 3
- 238000007639 printing Methods 0.000 abstract description 2
- 239000002075 main ingredient Substances 0.000 abstract 2
- 230000008602 contraction Effects 0.000 abstract 1
- 239000000758 substrate Substances 0.000 description 11
- 239000011521 glass Substances 0.000 description 6
- 238000005245 sintering Methods 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- 238000010304 firing Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 4
- 238000001354 calcination Methods 0.000 description 3
- 239000003638 chemical reducing agent Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000006722 reduction reaction Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052810 boron oxide Inorganic materials 0.000 description 2
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 229910017309 Mo—Mn Inorganic materials 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 238000009689 gas atomisation Methods 0.000 description 1
- 239000002241 glass-ceramic Substances 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000009692 water atomization Methods 0.000 description 1
Landscapes
- Parts Printed On Printed Circuit Boards (AREA)
- Conductive Materials (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明はセラミック多層回路
基板用導電ペーストに関し、さらに詳しくは、セラミッ
クグリーンシートと同時に焼成しても反りの少ない多層
回路基板を提供することのできる導電ペーストに関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a conductive paste for a ceramic multilayer circuit board, and more particularly, to a conductive paste capable of providing a multilayer circuit board with less warpage even when fired simultaneously with a ceramic green sheet.
【０００２】[0002]
【従来の技術】従来、セラミック多層回路基板として
は、アルミナ多層回路基板が主に用いられていた。アル
ミナ多層回路基板を製造するためには、アルミナの焼結
を行うために１５００℃以上の高温を必要とし、またそ
の温度に耐えるための導体材料としてＭｏ−ＭｎやＷ系
の高温焼結用材料が使用されていた。2. Description of the Related Art Conventionally, an alumina multilayer circuit board has been mainly used as a ceramic multilayer circuit board. In order to manufacture an alumina multilayer circuit board, a high temperature of 1500 ° C. or more is required for sintering alumina, and a Mo-Mn or W-based high-temperature sintering material is used as a conductor material to withstand the temperature. Was used.
【０００３】一方、最近ではアルミナよりも低温で焼成
することのできる低温焼成基板が徐々に用いられ始めて
いる。この低温焼成基板では、８００〜１０００℃の焼
成温度で焼結が可能となり、そのため導体材料もＭｏ−
ＭｎやＷよりも低抵抗のＡｇやＣｕが使用できるように
なり、高密度実装基板としてのＣＳＰ（チップサイズパ
ッケージ）、あるいはＭＣＭ（マルチチップモジュー
ル）に応用展開が図られつつある。On the other hand, recently, a low-temperature fired substrate that can be fired at a lower temperature than alumina has been gradually used. In this low-temperature fired substrate, sintering can be performed at a firing temperature of 800 to 1000 ° C., so that the conductor material is also Mo-
Ag and Cu, which have lower resistance than Mn and W, can be used, and their application to CSP (chip size package) as a high-density mounting substrate or MCM (multi-chip module) is being promoted.
【０００４】低温焼成基板は、一般にガラスフリット成
分とセラミック成分を混合したものであって、ガラスフ
リットの低融点を利用して低温度で焼結させて基板とす
るものである。[0004] A low-temperature fired substrate is generally a mixture of a glass frit component and a ceramic component, and is sintered at a low temperature using a low melting point of the glass frit to form a substrate.
【０００５】このようなセラミック多層回路基板を製造
する方法は、セラミックの基板となるグリーンシート上
に導電ペーストを印刷し、またセラミック層間の電気的
接続をとるためにセラミックグリーンシートのバイアホ
ール部に導電ペーストを充填し、それらのグリーンシー
トを複数枚積層した後一括で焼成する方法である。A method of manufacturing such a ceramic multilayer circuit board is to print a conductive paste on a green sheet serving as a ceramic substrate, and to form a via hole in a ceramic green sheet to make electrical connection between ceramic layers. This is a method in which a conductive paste is filled, a plurality of green sheets are stacked, and then fired at once.
【０００６】[0006]
【発明が解決しようとする課題】ところが、このように
して製造するセラミック多層回路基板には、焼成後に基
板に反りが発生するという問題がある。それは、焼成時
の収縮率の異なる材料であるセラミックグリーンシート
と導電ペーストを同時に焼成するために起こる現象であ
り、もしも反りが発生すると基板として使用できないこ
とは言うまもない。However, the ceramic multilayer circuit board manufactured in this manner has a problem that the board is warped after firing. This is a phenomenon that occurs because ceramic green sheets, which are materials having different shrinkage rates during firing, and a conductive paste are simultaneously fired. If warpage occurs, it cannot be used as a substrate.
【０００７】この反り現象は、導電ペーストの収縮がセ
ラミックグリーンシートの収縮よりも早く起こることに
起因している。This warping phenomenon is caused by the fact that shrinkage of the conductive paste occurs earlier than shrinkage of the ceramic green sheet.
【０００８】本発明は従来の技術の有する上記のような
問題点に鑑みてなされたものであって、その目的はセラ
ミックグリーンシートと同時に焼成しても反りが非常に
少ない導体回路を形成できるセラミック多層回路基板用
導電ペーストを提供することにある。SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned problems of the prior art, and has as its object to form a ceramic circuit capable of forming a conductor circuit with very little warpage even when fired simultaneously with a ceramic green sheet. An object of the present invention is to provide a conductive paste for a multilayer circuit board.
【０００９】[0009]
【課題を解決するための手段】上記目的を達成するため
に本発明は、アトマイズ法により製造した平均粒径が３
〜１０μｍであって且つ最大粒径が４０μｍ以下である
Ａｇ粉末が５０重量％以上である導電性粉末を主成分と
する導電ペーストを用いて多層回路基板を形成すること
により、セラミックグリーンシートと同時に焼成しても
反りが非常に少ない導体回路を形成することができる。Means for Solving the Problems To achieve the above object, the present invention relates to a method for producing a powder having an average particle diameter of 3 produced by an atomizing method.
By forming a multilayer circuit board using a conductive paste containing a conductive powder whose main component is 50% by weight or more of an Ag powder having a maximum particle size of 40 μm or less and having a maximum particle size of 40 μm or less, a ceramic green sheet and Even after firing, a conductor circuit with very little warpage can be formed.
【００１０】[0010]
【発明の実施の形態】すなわち、本発明は、アトマイズ
法により製造した平均粒径が３〜１０μｍであって且つ
最大粒径が４０μｍ以下であるＡｇ粉末が５０重量％以
上である導電性粉末を主成分とするセラミック多層回路
基板用導電ペーストを第一の発明とし、上記第一の発明
において、Ａｇ粉末以外の導電性粉末として、Ｐｄ、Ｐ
ｔ、Ａｕ、ＮｉまたはＣｕより選ばれる１種以上の金属
の粉末を併用することを特徴とするセラミック多層回路
基板用導電ペーストを第二の発明とする。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a conductive powder having an average particle size of 3 to 10 .mu.m and a maximum particle size of 40 .mu.m or less, and 50% by weight or more of an Ag powder produced by an atomizing method. The conductive paste for a ceramic multilayer circuit board as a main component is defined as a first invention. In the first invention, as conductive powders other than Ag powder, Pd, P
A second invention provides a conductive paste for a ceramic multilayer circuit board, characterized by using a powder of at least one metal selected from t, Au, Ni or Cu.
【００１１】上記のようなアトマイズ法により製造した
特定粒径のＡｇ粉末を用いることにより、Ａｇ粉末の収
縮率をセラミックグリーンシートの収縮率と適応させる
ことが可能となり、従って、反りの無いセラミック多層
回路基板を作製することができる。By using the Ag powder having a specific particle size produced by the atomizing method as described above, the shrinkage ratio of the Ag powder can be adapted to the shrinkage ratio of the ceramic green sheet. A circuit board can be manufactured.
【００１２】一般に導電ペーストに用いられるＡｇ粉末
は、化学的還元法により製造され、その平均粒径は０．
１〜２μｍが多い。しかしながら、これらの粉末を本発
明の用途に用いると、Ａｇ粉末の焼結がセラミックグリ
ーンシートの焼結よりも格段に早く進むため、反りの発
生が抑制できない。The Ag powder generally used for the conductive paste is produced by a chemical reduction method, and has an average particle size of 0.1.
1-2 μm is common. However, when these powders are used for the purpose of the present invention, the sintering of the Ag powder proceeds much faster than the sintering of the ceramic green sheet, so that the occurrence of warpage cannot be suppressed.
【００１３】また、特開平３−２８４８９６号公報に記
載されているように、通常の化学的還元法により製造さ
れたＡｇ粉末を仮焼して平均粒径を大きくしたものも本
発明の用途には有効であるが、仮焼したＡｇ粉末は元々
の粒子が寄り集まったような形態であって、仮焼した粒
子の中には空洞が多くなる。そのため仮焼した粒子は同
じ粒径の空洞の無い粒子に比べて焼結は早く進む。従っ
て、化学的還元の後に仮焼することによって得られる粒
径の大きなＡｇ粉末も本発明の用途には適さない。As described in JP-A-3-284896, a powder obtained by calcining an Ag powder produced by a usual chemical reduction method to increase the average particle size is also used in the present invention. Is effective, but the calcined Ag powder has a form in which the original particles are gathered, and the calcined particles have many cavities. Therefore, the sintering of the calcined particles proceeds faster than that of the non-hollow particles having the same particle diameter. Therefore, Ag powder having a large particle size obtained by calcining after chemical reduction is not suitable for the use of the present invention.
【００１４】本発明でいうアトマイズ法とは、Ａｇを高
温度で溶融し、そのＡｇ液体をノズルから高速度で噴霧
することによって、球状微粉化する方法である。Ａｇ液
体をノズルから高速度で噴霧する際の媒体としてガスを
用いる場合はガスアトマイズ法、あるいは水を用いる場
合は水アトマイズ法と称されるが、本発明で用いること
のできるアトマイズ粉末はどちらの方法によっても得る
ことができる。The atomization method referred to in the present invention is a method in which Ag is melted at a high temperature, and the Ag liquid is sprayed from a nozzle at a high speed to form spherical fine powder. When a gas is used as a medium for spraying an Ag liquid from a nozzle at a high speed, a gas atomization method is used, or when water is used, a water atomization method is called. However, atomized powder that can be used in the present invention is either method. Can also be obtained by
【００１５】本発明のアトマイズＡｇ粉末の粒径とし
て、平均粒径を３〜１０μｍと規定したのは、粒径が３
μｍより小さくなると、セラミックグリーンシートと同
時に焼成した場合に反りを無くすことは困難であり、ま
た、粒径を１０μｍ以下としたのは、それより大きいＡ
ｇ粉末では反りは少なくなるもののＡｇ粉末をペースト
化する際にＡｇ粉末がつぶれて箔状になり、印刷時のス
クリーンの目詰まりを起こすからである。The reason why the average particle size of the atomized Ag powder of the present invention is specified to be 3 to 10 μm is that the particle size is 3 to 10 μm.
If the particle size is smaller than μm, it is difficult to eliminate the warpage when firing simultaneously with the ceramic green sheet.
This is because, although the warpage of the g powder is reduced, the Ag powder is crushed into a foil when the Ag powder is formed into a paste, which causes clogging of the screen during printing.
【００１６】同様に、Ａｇ粉末の最大粒径を４０μｍ以
下としたのは、４０μｍよりも大きなＡｇ粉末を用いる
と、ペースト化する際に粉末がつぶれて箔状になり、印
刷時のスクリーンの目詰まりを起こすからである。Similarly, the reason why the maximum particle size of the Ag powder is set to 40 μm or less is that if an Ag powder having a size larger than 40 μm is used, the powder is crushed into a foil when it is made into a paste, so that the screen of This is because it causes clogging.
【００１７】本発明の導電ペーストは、セラミックグリ
ーンシートの内層用の導電ペーストとして、また、ビア
の充填用のペーストとして、あるいは表層用のペースト
として適用が可能である。The conductive paste of the present invention can be applied as a conductive paste for an inner layer of a ceramic green sheet, as a paste for filling a via, or as a paste for a surface layer.
【００１８】本発明の導電ペーストでは、アトマイズ法
により製造した、平均粒径が３〜１０μｍであって且つ
最大粒径が４０μｍ以下であるＡｇ粉末が導電性粉末の
５０重量％以上であることが好ましい。Ａｇ粉末が５０
重量％未満では、セラミックグリーンシートと同時に焼
成した場合に、反りを無くすことができないからであ
る。In the conductive paste of the present invention, the Ag powder having an average particle size of 3 to 10 μm and a maximum particle size of 40 μm or less, which is produced by an atomizing method, may be 50% by weight or more of the conductive powder. preferable. 50 Ag powder
If the amount is less than the weight percentage, the warpage cannot be eliminated when the ceramic green sheet is fired simultaneously.
【００１９】Ａｇ以外の導電性粉末を加えることも可能
であり、例えば、Ｐｔ、Ｐｄ、Ａｕ、ＮｉまたはＣｕを
併用することもできる。さらに、これら１種以上の金属
の粉末とＡｇ粉末を併用することも可能である。It is also possible to add a conductive powder other than Ag. For example, Pt, Pd, Au, Ni or Cu can be used in combination. Further, it is also possible to use powder of one or more of these metals and Ag powder in combination.
【００２０】また、導電性粉末以外に種々の添加物、例
えば、無機化合物、ガラスフリット、有機金属化合物等
を導電ペーストとしての特性を低下させない範囲で一定
量加えることも可能である。In addition to the conductive powder, it is also possible to add various additives, for example, inorganic compounds, glass frit, organometallic compounds and the like in a fixed amount within a range that does not deteriorate the properties as a conductive paste.
【００２１】[0021]
【実施例】以下に実施例を挙げて本発明を具体的に説明
する。実施例で使用したＡｇ粉末の詳細は次の表１に示
すとおりである。EXAMPLES The present invention will be specifically described below with reference to examples. The details of the Ag powder used in the examples are as shown in Table 1 below.
【００２２】[0022]
【表１】 [Table 1]
【００２３】また、使用したグリーンシートは、酸化珪
素、酸化アルミニウム、酸化ホウ素を主成分とするガラ
スフリット５０重量部と酸化アルミニウム５０重量部を
混合したものを用いた。グリーンシートの厚みは２００
μｍである。The green sheet used was a mixture of 50 parts by weight of a glass frit mainly composed of silicon oxide, aluminum oxide and boron oxide and 50 parts by weight of aluminum oxide. Green sheet thickness is 200
μm.
【００２４】一方、導電ペーストは以下の表２に示す組
成のものをプラネタリーミキサーで予備混練後、３本ロ
ールで混練することによって得た。On the other hand, the conductive paste having the composition shown in Table 2 below was preliminarily kneaded with a planetary mixer and then kneaded with three rolls.
【００２５】そして、グリーンシートの上に表２に示す
各組成の導電ペーストを１０ｍｍ□の大きさでスクリー
ン印刷し、それらを５枚重ねて熱プレスした後、最高温
度９００℃で１時間焼成することによって多層回路基板
を作製し、その基板の反りを測定した。Then, a conductive paste having each composition shown in Table 2 is screen-printed in a size of 10 mm square on the green sheet, five of them are stacked and hot-pressed, and then fired at a maximum temperature of 900 ° C. for 1 hour. Thus, a multilayer circuit board was produced, and the warpage of the board was measured.
【００２６】なお、反りの測定は、反りゲージを用いて
基板全体の反り量を求め、基板の厚みをその反り量から
差し引いたものを反り量とし、その値を表２に示す。な
お、表２に示す反り量は、２０μｍ以下のものが良好で
ある。In the measurement of the warpage, the amount of warpage of the entire substrate is obtained using a warp gauge, and the value obtained by subtracting the thickness of the substrate from the amount of warpage is defined as the amount of warpage. The warpage shown in Table 2 is preferably 20 μm or less.
【００２７】[0027]
【表２】 [Table 2]
【００２８】表２から以下の点が明らかである。 （１）実施例１、２は本発明のアトマイズ法により製造
した平均粒径３〜１０μｍのＡｇ粉末であるから、基板
の反りは良好である。The following points are clear from Table 2. (1) Since Examples 1 and 2 are Ag powders having an average particle size of 3 to 10 μm manufactured by the atomizing method of the present invention, the warpage of the substrate is good.
【００２９】（２）実施例３、４は、アトマイズ法によ
り製造した平均粒径３．６μｍのＡｇ粉末にＰｔ粉末ま
たはＰｄ粉末とガラス粉末をさらに添加したものである
が、ともに反り量は少なく良好である。(2) In Examples 3 and 4, Pt powder or Pd powder and glass powder were further added to Ag powder having an average particle diameter of 3.6 μm produced by the atomizing method, but both of them had a small amount of warpage. Good.
【００３０】（３）しかし、平均粒径２．７μｍのＡｇ
粉末を用いた比較例１は、反り量が大きい。(3) However, Ag having an average particle size of 2.7 μm
Comparative Example 1 using powder has a large amount of warpage.
【００３１】（４）また、比較例２は、Ａｇ粉末の平均
粒径が１０．５μｍと大きすぎるので、ペーストを作製
した後スクリーン印刷する際に、スクリーン版への目詰
まりが生じて良好に印刷できなかった。(4) In Comparative Example 2, since the average particle size of the Ag powder was too large, 10.5 μm, clogging of the screen plate occurred during screen printing after the paste was produced, so that the paste was excellent. I could not print.
【００３２】（５）また、比較例３は、Ａｇ粉末の平均
粒径が１．６μｍと小さすぎるので、反り量が非常に大
きい。(5) In Comparative Example 3, since the average particle size of the Ag powder is too small at 1.6 μm, the amount of warpage is very large.
【００３３】（６）さらに、平均粒径が１．６μｍのＡ
ｇ粉末を仮焼して平均粒径を大きくした比較例４や５は
比較例３に比べて反り量は改善されるものの、まだ良好
なレベルとは言えない。(6) Further, A having an average particle size of 1.6 μm
In Comparative Examples 4 and 5 in which the average particle size was increased by calcining the g powder, the warpage was improved as compared with Comparative Example 3, but it was still not at a satisfactory level.
【００３４】以上の結果は、グリーンシート材料とし
て、酸化珪素、酸化アルミニウムおよび酸化ホウ素を主
成分とするガラスフリット成分と酸化アルミニウムをセ
ラミック成分として用いたものであるが、それ以外の一
般に８００〜１０００℃で焼成される低温焼成基板用ガ
ラスセラミックグリーンシートにも本発明は適用可能で
ある。The above results show that the green sheet material used was a glass frit component containing silicon oxide, aluminum oxide, and boron oxide as main components and aluminum oxide as a ceramic component. The present invention is also applicable to a glass ceramic green sheet for a low-temperature fired substrate fired at ℃.
【００３５】[0035]
【発明の効果】本発明によれば、セラミックグリーンシ
ートと同時に焼成しても反りが非常に少ない導体回路を
形成できるセラミック多層回路基板用導電ペーストを提
供することができる。According to the present invention, it is possible to provide a conductive paste for a ceramic multilayer circuit board capable of forming a conductive circuit having very little warpage even when fired simultaneously with the ceramic green sheet.
Claims (2)
３〜１０μｍであって且つ最大粒径が４０μｍ以下であ
るＡｇ粉末が５０重量％以上である導電性粉末を主成分
とするセラミック多層回路基板用導電ペースト。1. A ceramic multilayer circuit board containing, as a main component, a conductive powder containing 50% by weight or more of an Ag powder having an average particle size of 3 to 10 μm and a maximum particle size of 40 μm or less manufactured by an atomizing method. For conductive paste.
ｄ、Ｐｔ、Ａｕ、ＮｉまたはＣｕより選ばれる１種以上
の金属の粉末を併用することを特徴とする請求項１記載
のセラミック多層回路基板用導電ペースト。2. The conductive powder other than Ag powder is P
2. The conductive paste for a ceramic multilayer circuit board according to claim 1, wherein a powder of at least one metal selected from d, Pt, Au, Ni or Cu is used in combination.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33137397A JP3150932B2 (en) | 1997-12-02 | 1997-12-02 | Conductive paste for ceramic multilayer circuit board |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33137397A JP3150932B2 (en) | 1997-12-02 | 1997-12-02 | Conductive paste for ceramic multilayer circuit board |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH11163487A true JPH11163487A (en) | 1999-06-18 |
| JP3150932B2 JP3150932B2 (en) | 2001-03-26 |
Family
ID=18242968
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP33137397A Expired - Lifetime JP3150932B2 (en) | 1997-12-02 | 1997-12-02 | Conductive paste for ceramic multilayer circuit board |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3150932B2 (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6826031B2 (en) | 2001-09-06 | 2004-11-30 | Noritake Co., Limited | Ceramic electronic component and production method therefor |
| JP2009087712A (en) * | 2007-09-28 | 2009-04-23 | Noritake Co Ltd | Conductor paste and thick-film circuit board |
| JP2012151159A (en) * | 2011-01-17 | 2012-08-09 | Kyoto Elex Kk | Conductive paste for ceramic multilayer circuit board |
| JP2015043429A (en) * | 2014-09-02 | 2015-03-05 | 京都エレックス株式会社 | Conductive paste for ceramic multilayer circuit board |
| KR20180075582A (en) | 2015-10-30 | 2018-07-04 | 도와 일렉트로닉스 가부시키가이샤 | Silver powder and method for producing the same |
-
1997
- 1997-12-02 JP JP33137397A patent/JP3150932B2/en not_active Expired - Lifetime
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6826031B2 (en) | 2001-09-06 | 2004-11-30 | Noritake Co., Limited | Ceramic electronic component and production method therefor |
| JP2009087712A (en) * | 2007-09-28 | 2009-04-23 | Noritake Co Ltd | Conductor paste and thick-film circuit board |
| JP2012151159A (en) * | 2011-01-17 | 2012-08-09 | Kyoto Elex Kk | Conductive paste for ceramic multilayer circuit board |
| JP2015043429A (en) * | 2014-09-02 | 2015-03-05 | 京都エレックス株式会社 | Conductive paste for ceramic multilayer circuit board |
| KR20180075582A (en) | 2015-10-30 | 2018-07-04 | 도와 일렉트로닉스 가부시키가이샤 | Silver powder and method for producing the same |
| US10828702B2 (en) | 2015-10-30 | 2020-11-10 | Dowa Electronics Materials Co., Ltd. | Silver powder and method for producing same |
| US11407030B2 (en) | 2015-10-30 | 2022-08-09 | Dowa Electronics Materials Co., Ltd. | Silver powder and method for producing same |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3150932B2 (en) | 2001-03-26 |
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