JPH11159633A - Valve for liquefied gas cylinder - Google Patents
Valve for liquefied gas cylinderInfo
- Publication number
- JPH11159633A JPH11159633A JP33048597A JP33048597A JPH11159633A JP H11159633 A JPH11159633 A JP H11159633A JP 33048597 A JP33048597 A JP 33048597A JP 33048597 A JP33048597 A JP 33048597A JP H11159633 A JPH11159633 A JP H11159633A
- Authority
- JP
- Japan
- Prior art keywords
- valve
- gas
- container
- passage part
- passage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010926 purge Methods 0.000 abstract description 18
- 239000012535 impurity Substances 0.000 abstract description 15
- 238000005452 bending Methods 0.000 abstract description 3
- 239000007789 gas Substances 0.000 description 61
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 13
- 238000005498 polishing Methods 0.000 description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- 230000007246 mechanism Effects 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 238000005553 drilling Methods 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910001369 Brass Inorganic materials 0.000 description 1
- -1 Diflon Polymers 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000010951 brass Substances 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- UUAGAQFQZIEFAH-UHFFFAOYSA-N chlorotrifluoroethylene Chemical compound FC(F)=C(F)Cl UUAGAQFQZIEFAH-UHFFFAOYSA-N 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Filling Or Discharging Of Gas Storage Vessels (AREA)
- Lift Valve (AREA)
- Details Of Valves (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、容器弁に関し、詳
しくは、半導体産業において、電子デバイスの製造プロ
セスに使用される半導体材料ガスやパージガス，キャリ
アガス等の高純度ガスを供給するガス充填容器に装着す
る容器弁として適した構造の容器弁に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a container valve, and more particularly, to a gas filling container for supplying a high-purity gas such as a semiconductor material gas, a purge gas, and a carrier gas used in a process of manufacturing an electronic device in the semiconductor industry. The present invention relates to a container valve having a structure suitable as a container valve to be mounted on a container.
【０００２】[0002]
【従来の技術及び発明が解決しようとする課題】半導体
プロセスに使われるガスは、高純度かつ高清浄度が求め
られ、ガス中にパーティクルや酸素、水分等の不純物が
存在すると、酸化や金属汚染に起因したデバイス特性不
良や、製品の歩留まり低下といった問題を引き起こす。2. Description of the Related Art Gases used in semiconductor processes are required to have a high purity and a high degree of cleanliness. If impurities such as particles, oxygen, and moisture are present in the gas, oxidation and metal contamination will occur. This causes problems such as poor device characteristics and reduced product yield.
【０００３】一般に、ガス容器を半導体プロセスガスの
供給設備や製造設備に取り付ける際には、ガス容器弁の
口金部が大気に暴露されているため、口金部とガス設備
の取り付け用配管との間に大気が混入してしまう。この
とき混入した大気は、窒素やアルゴンガスといった不活
性ガスによるパージや、真空排気により除去されるが、
混入した不純物の除去が不十分であると、ガス製造時に
は、残留不純物が容器内に混入する。In general, when a gas container is mounted on a semiconductor process gas supply facility or a manufacturing facility, the base of the gas container valve is exposed to the atmosphere. Air will be mixed in. The air mixed in at this time is removed by purging with an inert gas such as nitrogen or argon gas or evacuation,
If the mixed impurities are not sufficiently removed, residual impurities are mixed into the container during gas production.
【０００４】例えば、反応性を持つガスに、酸素や水分
等の大気成分ガスが混入すると、ガス濃度の経時変化を
引き起こし、酸化反応による不純物生成や、容器と容器
弁との接ガス部の金属表面に腐食を生じさせる原因とな
る。また、ガス供給時には、ガス供給設備から消費設備
にかけて、残留不純物による汚染が発生する。ガス供給
時における汚染の影響は、ガスシステムに対してだけで
なく、歩留りの低下や電気的特性の不良としても現れ
る。For example, when an atmospheric component gas such as oxygen or moisture is mixed into a reactive gas, the concentration of the gas changes over time, and impurities are generated by an oxidation reaction, and a metal in a gas contact portion between a container and a container valve is formed. It causes corrosion on the surface. Further, at the time of gas supply, contamination from residual impurities occurs from the gas supply equipment to the consumption equipment. The effects of contamination during gas supply appear not only on the gas system, but also on reduced yield and poor electrical characteristics.
【０００５】従来から最も多く使用されている容器弁
は、図８に示すように、一つの口金部１がガスの取り出
し口と充填口とを兼用する一口構造であり、口金部１と
弁室２とを接続するガス流路３は、途中で直角に屈曲し
ていた。この構造では、ガス流路３の立ち上がり部分３
ａがパージを行う際のデッドスペースとなり、所定の不
純物濃度に達するまでに長時間を要し、パージガス量も
多量に必要となっていた。As shown in FIG. 8, the most commonly used container valve has a one-port structure in which one base 1 serves both as a gas take-out port and a filling port, and the base 1 and the valve chamber are used. The gas flow path 3 connecting the second and the second was bent at a right angle on the way. In this structure, the rising portion 3 of the gas flow path 3
The “a” becomes a dead space when purging is performed, it takes a long time to reach a predetermined impurity concentration, and a large amount of purge gas is required.
【０００６】一方、特開平５−１０６７４９号公報や特
開平６−２８１０２６号公報に記載された容器弁は、こ
の問題を解決するために提案されたもので、容器弁内の
不純物を速やかに除去することはできるが、二個の容器
弁が一体化したブロック弁構造になっているため、弁自
体が非常に大きくなり、容器の輸送時に転倒しやすいと
いう保安上の問題点を有していた。さらに、通常の容器
弁に比較して複雑な構造を有しており、また、この容器
弁を使用するためには、ガス設備側にパージガス用配管
の増設が必要になるなど、コストが大幅に増加するとい
う問題を有していた。On the other hand, the container valve described in Japanese Patent Application Laid-Open Nos. 5-1076749 and 6-281026 is proposed to solve this problem, and quickly removes impurities in the container valve. However, because of the block valve structure in which the two container valves are integrated, the valve itself becomes very large and has a security problem that it is easy to overturn when transporting the container. . Furthermore, it has a complicated structure as compared with a normal container valve, and the use of this container valve requires additional piping for purge gas on the gas equipment side, resulting in significant cost reduction. Had the problem of increasing.
【０００７】そこで本発明は、簡単な構造で、混入不純
物を効率的に除去することができ、残留不純物を低減さ
せることができる高純度ガス用に適した容器弁を提供す
ることを目的としている。Accordingly, an object of the present invention is to provide a container valve suitable for high-purity gas, which has a simple structure, can efficiently remove mixed impurities, and can reduce residual impurities. .
【０００８】[0008]
【課題を解決するための手段】上記目的を達成するた
め、本発明の高純度ガス用容器弁は、ガス充填容器に装
着される容器弁であって、容器弁内の弁室と該容器弁の
一側方に開口した口金部とを接続するガス流路を、前記
口金部から前記弁室方向に向かって口金部の軸線に対し
て傾斜させて設けた第１流路部と、前記弁室から前記第
１流路部の内端に向かって垂直方向に設けた第２流路部
とにより形成したを特徴としている。In order to achieve the above object, a container valve for high purity gas of the present invention is a container valve mounted on a gas filling container, wherein a valve chamber in the container valve and the container valve are provided. A first flow path portion provided with a gas flow path connecting a base portion opened to one side thereof inclined from an axis of the base portion toward the valve chamber direction from the base portion; And a second flow path portion provided vertically from the chamber toward the inner end of the first flow path portion.
【０００９】[0009]
【発明の実施の形態】図１は、本発明の容器弁の一形態
例を示す断面図である。この容器弁１０は、ガス容器装
着部１１の中心に形成されて容器内と弁室１２とに連通
する内部側ガス流路１３と、容器弁１０の一側方に開口
した口金部１４と弁室１２とに連通する外部側ガス流路
１５とを有しており、前記弁室１２内には、内部側ガス
流路１３の端部外周に設けられたリング状の弁シート１
６と、この弁シート１６に密着することにより流路を閉
塞するダイヤフラム１７とが設けれている。FIG. 1 is a sectional view showing an embodiment of a container valve according to the present invention. The container valve 10 is formed at the center of the gas container mounting portion 11 and communicates with the inside of the container and the valve chamber 12. An outer gas passage 15 communicating with the chamber 12, and a ring-shaped valve seat 1 provided on an outer periphery of an end of the inner gas passage 13 in the valve chamber 12.
6 and a diaphragm 17 that closes the flow path by being in close contact with the valve sheet 16.
【００１０】前記外部側ガス流路１５は、口金部１４側
から穿孔加工される第１流路部１５ａと、弁室１２側か
ら穿孔加工される第２流路部１５ｂとからなるもので、
第１流路部１５ａは、口金部１４から前記弁室１２方向
に向かって口金部１４の軸線に対して傾斜させた状態で
設けられており、第２流路部１５ｂは、内部側ガス流路
１３と平行な方向で、弁室底面に対して垂直な方向で第
１流路部１５ａの内端に向かって設けられている。The outer gas passage 15 comprises a first passage 15a formed by drilling from the base 14 side and a second passage 15b formed by drilling from the valve chamber 12 side.
The first flow path 15a is provided so as to be inclined from the base 14 toward the valve chamber 12 with respect to the axis of the base 14, and the second flow path 15b is provided with an internal gas flow. It is provided toward the inner end of the first flow path portion 15a in a direction parallel to the passage 13 and perpendicular to the bottom surface of the valve chamber.
【００１１】すなわち、容器弁１０を装着した容器を立
てた状態で第１流路部１５ａは、口金部１４から仰角を
有するように穿孔加工され、第２流路部１５ｂは、弁室
１２から鉛直方向に穿孔加工されることにより、それぞ
れ形成されている。That is, in a state where the container with the container valve 10 mounted thereon is erected, the first flow passage portion 15a is perforated so as to have an elevation angle from the base portion 14, and the second flow passage portion 15b is opened from the valve chamber 12. Each is formed by drilling in the vertical direction.
【００１２】前記第１流路部１５ａの仰角は、口金部１
４の形状や第１流路部１５ａの径等により適当な角度、
例えば１０〜４５度の範囲で適宜な角度に設定すること
ができ、穿孔加工が行える範囲でできるだけ大きくする
ことが好ましいが、通常の口金部１４においては、約２
０度が適当であり、十分な効果が得られる。The elevation angle of the first channel portion 15a is
4 and the diameter of the first flow path portion 15a, etc.
For example, it is possible to set an appropriate angle in a range of 10 to 45 degrees, and it is preferable to set the angle as large as possible in a range in which drilling can be performed.
0 degrees is appropriate, and a sufficient effect can be obtained.
【００１３】このように、口金部１４の第１流路部１５
ａに適当な仰角（口金部１４から弁室１２方向に向かう
傾斜）を設けることにより、第１流路部１５ａと第２流
路部１５ｂとが接続する外部側ガス流路１５の屈曲角度
を鈍角にすることができ、口金部１４から導入されるパ
ージガスが弁室１２方向に流れ易くなり、従来のような
デッドスペースを生じ難くなるので、パージに要する時
間やガス量を大幅に低減することができる。As described above, the first flow path 15 of the base 14
a is provided with an appropriate elevation angle (inclination from the base 14 toward the valve chamber 12), the bending angle of the external gas flow path 15 connected between the first flow path 15a and the second flow path 15b is reduced. The obtuse angle can be set, and the purge gas introduced from the base 14 can easily flow in the direction of the valve chamber 12, so that a dead space unlike the conventional case is less likely to occur. Therefore, the time required for purging and the amount of gas can be significantly reduced. Can be.
【００１４】したがって、簡単な構造で、混入不純物を
効率的に除去することができ、残留不純物を低減させる
ことができるので、半導体産業で使用される各種高純度
ガスを充填する容器に装着する容器弁として最適であ
る。[0014] Therefore, since the contaminant impurities can be efficiently removed with a simple structure and the residual impurities can be reduced, a container to be mounted on a container filled with various high-purity gases used in the semiconductor industry. Ideal as a valve.
【００１５】なお、容器弁１０は、従来のものと同様
に、真鍮，ステンレス鋼，ニッケル合金等から鍛造さ
れ、機械加工されることによって製作されるもので、水
分等のガス分子やパーティクルが接ガス部表面に吸着す
る影響を少なくし、金属表面の耐食性を向上させる目的
から、接ガス部表面には、機械研磨，砥粒研磨，電解研
磨，複合電解研磨，化学研磨，複合化学研磨等が施され
ている。The container valve 10 is forged from brass, stainless steel, a nickel alloy, or the like, and is manufactured by machining in the same manner as a conventional one, and is in contact with gas molecules such as moisture and particles. Mechanical polishing, abrasive grain polishing, electrolytic polishing, composite electrolytic polishing, chemical polishing, composite chemical polishing, etc. are applied to the gas contacting surface to reduce the effect of adsorption on the gas surface and improve the corrosion resistance of the metal surface. It has been subjected.
【００１６】また、前記ダイヤフラム１７は、通常、ス
テンレス鋼やニッケル基合金で形成されるものであっ
て、容器弁１０に設けられた開閉機構１８によって開閉
作動する。開閉機構１８としては、従来からこの種の容
器弁に用いられている各種機構、例えば、圧縮空気によ
る空気作動方式、モーターでネジ棒を回転させる電動
式、ハンドルを手動で操作する手動式等、任意の形式の
開閉機構を適宜に採用することができる。一方、弁シー
ト１６は、テフロン，ダイフロン，ポリイミド等の各種
高分子材料が一般に使用される。さらに、水分の除去効
率を考慮した容器弁ボディーとシートとが一体型のオー
ルメタルバルブ構造を採用することもできる。The diaphragm 17 is usually made of stainless steel or a nickel-based alloy, and is opened and closed by an opening and closing mechanism 18 provided on the container valve 10. As the opening / closing mechanism 18, various mechanisms conventionally used for this kind of container valve, for example, an air actuation system using compressed air, an electric system that rotates a screw rod with a motor, a manual system that manually operates a handle, and the like, Any type of opening / closing mechanism can be appropriately adopted. On the other hand, for the valve sheet 16, various polymer materials such as Teflon, Diflon, and polyimide are generally used. Further, an all-metal valve structure in which the container valve body and the seat in consideration of the moisture removal efficiency are integrated can be adopted.
【００１７】また、容器弁１０内の各流路は、真空排気
時におけるコンダクタンスの低下を抑えるため、内径を
大きくすることが望ましいが、通常は、３〜６ｍｍが適
当である。同様の理由から、各流路の長さはできる限り
短くすることが望ましく、弁室１２の高さ（弁室底面と
ダイヤフラムとの距離）も、３ｍｍ以下にすることが望
ましい。It is desirable to increase the inner diameter of each flow path in the container valve 10 in order to suppress a decrease in conductance during vacuum evacuation, but usually, 3 to 6 mm is appropriate. For the same reason, it is desirable that the length of each flow path be as short as possible, and that the height of the valve chamber 12 (the distance between the bottom surface of the valve chamber and the diaphragm) be 3 mm or less.
【００１８】ガス容器への容器弁１０の装着や、容器弁
１０の口金部１４への配管の接続は、従来と同様に行う
ことができるので、図示及び説明は省略する。また、パ
ージ操作やパージガスの種類も従来と同様であり、特に
限定されるものではないから、これらの説明も省略す
る。The mounting of the container valve 10 on the gas container and the connection of the pipe to the base 14 of the container valve 10 can be performed in the same manner as in the prior art, so that illustration and description thereof are omitted. In addition, the purge operation and the type of purge gas are the same as those in the related art, and are not particularly limited.
【００１９】[0019]
【実施例】図２及び図３に示すように、容器弁１０の口
金部１４に高純度窒素導入管２１と導出管２２と接続
し、導出管２２を大気圧質量分析計（ＡＰＩ−ＭＳ）２
３に接続してパージ特性を調べた。導出管２２には、切
換弁２４ａ，２４ｂを介して分析計用パージガス導入管
２５を設け、ＡＰＩ−ＭＳ２３の前後には、ＡＰＩ−Ｍ
Ｓ２３を流れるガス量を一定（毎分１．２リットル）に
保つための流量制御器２６ａ，２６ｂ及びバイパス管２
７を設けた。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS As shown in FIGS. 2 and 3, a high-purity nitrogen inlet pipe 21 and an outlet pipe 22 are connected to a base 14 of a container valve 10, and the outlet pipe 22 is connected to an atmospheric pressure mass spectrometer (API-MS). 2
3 and the purge characteristics were examined. The outlet pipe 22 is provided with a purge gas inlet pipe 25 for the analyzer via the switching valves 24a and 24b, and an API-M is provided before and after the API-MS 23.
The flow controllers 26a and 26b and the bypass pipe 2 for maintaining the gas amount flowing through S23 constant (1.2 liters per minute)
7 was provided.
【００２０】使用した容器弁１０は、前記図１に示す構
造のダイヤフラム容器弁（第１流路部１５ａの仰角は２
０度）であって、ステンレス３１６Ｌ鋼の鍛造品を機械
加工したものである。ダイヤフラム１７には、Ｎｉ基合
金で、接ガス面に複合化学研磨を施したものを使用し、
弁シート１６にはダイフロンを使用した。また、比較例
として、外部側ガス流路１５における第１流路部１５ａ
を、第２流路部１５ｂに対して直角（図８参照）に形成
した以外は、同一仕様の容器弁を用意した。The container valve 10 used is a diaphragm container valve having the structure shown in FIG. 1 (the elevation angle of the first flow passage portion 15a is 2 degrees).
0 °), which is machined from a forged product of stainless steel 316L steel. The diaphragm 17 is made of a Ni-based alloy having a gas contact surface subjected to complex chemical polishing.
Daiflon was used for the valve sheet 16. Further, as a comparative example, the first channel portion 15a in the external gas channel 15
Was formed at a right angle to the second flow path portion 15b (see FIG. 8), and a container valve having the same specification was prepared.
【００２１】そして、高純度窒素導入管２１から毎分２
リットルで高純度窒素（水分０．０１ｐｐｍ以下，酸素
０．１ｐｐｍ以下，パーティクル１０個／ｃｆ以下）を
導入し、導出管２２から導出された窒素ガス中の不純物
成分の濃度を測定した。図４及び図５は、不純物の代表
として酸素の濃度を測定した結果を示すものである。本
実施例の容器弁では、図４に示すように、短時間（約４
分）でイオン強度が１．０に到達したのに対し、比較例
の容器弁では、イオン強度が１．０に到達するのに約１
０分を要した。同様に、水分の場合、比較例の容器弁で
は、イオン強度が１．０に到達するのに３８分を要した
が、本実施例の容器弁では２９分に短縮された。Then, 2 minutes per minute from the high-purity nitrogen introduction pipe 21
High-purity nitrogen (water 0.01 ppm or less, oxygen 0.1 ppm or less, 10 particles / cf or less) was introduced in liter, and the concentration of the impurity component in the nitrogen gas discharged from the discharge pipe 22 was measured. 4 and 5 show the results of measuring the concentration of oxygen as a representative of the impurity. In the container valve of the present embodiment, as shown in FIG.
Min), the ionic strength reached 1.0, whereas in the container valve of the comparative example, it took about 1
It took 0 minutes. Similarly, in the case of moisture, it took 38 minutes for the ionic strength to reach 1.0 in the container valve of the comparative example, but was shortened to 29 minutes in the container valve of the present example.
【００２２】すなわち、図６に示すように、本実施例の
容器弁では、第１流路部１５ａに仰角（２０度）を形成
したので、高純度窒素導入管２１から口金部１４を経て
第１流路部１５ａに流入したガスが、第２流路部１５ｂ
を経て弁室にまでスムーズに流れ、弁室を含む外部側ガ
ス流路１５のパージを効率よく行うことができる。これ
に対し、図７に示すように、従来の容器弁では、外部側
のガス流路３が直角に屈曲しているため、高純度窒素導
入管２１から流入したガスが、この屈曲によって立ち上
がり部分３ａにスムーズに流れず、この部分にガスの滞
留Ｇを生じるため、パージに長時間を要することにな
る。That is, as shown in FIG. 6, in the container valve of this embodiment, since the elevation angle (20 degrees) is formed in the first flow passage portion 15a, the first passage portion 15a passes through the base portion 14 from the high-purity nitrogen introduction tube 21 through the base portion 14. The gas that has flowed into the first flow path portion 15a is
, And smoothly flows to the valve chamber, whereby the external gas flow path 15 including the valve chamber can be efficiently purged. On the other hand, as shown in FIG. 7, in the conventional container valve, since the gas passage 3 on the outer side is bent at a right angle, the gas flowing from the high-purity nitrogen introduction pipe 21 rises due to the bending. Since the gas does not flow smoothly to the portion 3a and a gas stagnation G occurs in this portion, a long time is required for purging.
【００２３】[0023]
【発明の効果】以上説明したように、本発明の高純度ガ
ス用容器弁によれば、簡単な構造でパージ特性（ガス置
換特性）を大幅に向上させることができ、しかも、外形
的には、従来の一口構造容器弁と同一に形成できるの
で、ガス設備側に新規のコストが発生することもない。As described above, according to the container valve for high-purity gas of the present invention, the purge characteristics (gas replacement characteristics) can be greatly improved with a simple structure, and furthermore, the external shape is reduced. Since it can be formed in the same manner as the conventional single-port container valve, there is no new cost on the gas equipment side.
【図１】 本発明の容器弁の一形態例を示す断面図であ
る。FIG. 1 is a cross-sectional view showing one embodiment of a container valve of the present invention.
【図２】 パージ特性測定時の口金部への配管接続状態
を示す要部の断面図である。FIG. 2 is a cross-sectional view of a main part showing a state of connection of a pipe to a base when measuring purge characteristics.
【図３】 パージ特性測定時の機器配置状態を示す系統
図である。FIG. 3 is a system diagram showing a device arrangement state at the time of measuring purge characteristics.
【図４】 実施例の容器弁における酸素濃度の変化を示
す図である。FIG. 4 is a diagram showing a change in oxygen concentration in the container valve of the example.
【図５】 比較例の容器弁における酸素濃度の変化を示
す図である。FIG. 5 is a diagram showing a change in oxygen concentration in a container valve of a comparative example.
【図６】 実施例の容器弁におけるパージ操作時の容器
弁内のガスの流れを説明するための要部の断面図であ
る。FIG. 6 is a cross-sectional view of a main part for describing a gas flow in the container valve during a purge operation in the container valve of the embodiment.
【図７】 比較例の容器弁におけるパージ操作時の容器
弁内のガスの流れを説明するための要部の断面図であ
る。FIG. 7 is a cross-sectional view of a main part for describing a gas flow in a container valve during a purge operation in a container valve of a comparative example.
【図８】 従来の容器弁の一例を示す断面図である。FIG. 8 is a sectional view showing an example of a conventional container valve.
１０…容器弁、１１…ガス容器装着部、１２…弁室、１
３…内部側ガス流路、１４…口金部、１５…外部側ガス
流路、１５ａ…第１流路部、１５ｂ…第２流路部、１６
…弁シート，１７…ダイヤフラム、１８…開閉機構10: container valve, 11: gas container mounting part, 12: valve chamber, 1
Reference numeral 3 denotes an internal gas flow path, 14 denotes a base, 15 denotes an external gas flow path, 15a denotes a first flow path, 15b denotes a second flow path, 16
... valve seat, 17 ... diaphragm, 18 ... opening and closing mechanism
───────────────────────────────────────────────────── フロントページの続き (72)発明者 池田 拓也 東京都港区西新橋１−16−７ 日本酸素株 式会社内 (72)発明者 羽坂 智 東京都港区西新橋１−16−７ 日本酸素株 式会社内 (72)発明者 長谷川 英晴 東京都港区西新橋１−16−７ 日本酸素株 式会社内 (72)発明者 千葉 拓 東京都府中市西原町１−３ 株式会社ハマ イ内 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Takuya Ikeda 1-16-7 Nishi-Shimbashi, Minato-ku, Tokyo Inside Nippon Sanso Corporation (72) Inventor Satoshi Hanasaka 1-16-7, Nishi-Shimbashi, Minato-ku, Tokyo Nippon Sanso Corporation (72) Inventor Hideharu Hasegawa 1-16-7 Nishi-Shimbashi, Minato-ku, Tokyo Nippon Sanso Corporation (72) Inventor Taku Chiba 1-3 Nishiharacho, Fuchu-shi, Tokyo Inside
Claims (1)
て、容器弁内の弁室と該容器弁の一側方に開口した口金
部とを接続するガス流路を、前記口金部から前記弁室方
向に向かって口金部の軸線に対して傾斜させて設けた第
１流路部と、前記弁室から前記第１流路部の内端に向か
って垂直方向に設けた第２流路部とにより形成したこと
を特徴とする容器弁。1. A container valve mounted on a gas-filled container, wherein a gas flow path connecting a valve chamber in the container valve and a base portion opened to one side of the container valve is formed from the base portion. A first flow path portion provided to be inclined with respect to the axis of the base portion toward the valve chamber, and a second flow direction provided vertically from the valve chamber toward the inner end of the first flow path portion. A container valve formed by a passage portion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33048597A JPH11159633A (en) | 1997-12-01 | 1997-12-01 | Valve for liquefied gas cylinder |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33048597A JPH11159633A (en) | 1997-12-01 | 1997-12-01 | Valve for liquefied gas cylinder |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH11159633A true JPH11159633A (en) | 1999-06-15 |
Family
ID=18233161
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP33048597A Pending JPH11159633A (en) | 1997-12-01 | 1997-12-01 | Valve for liquefied gas cylinder |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH11159633A (en) |
-
1997
- 1997-12-01 JP JP33048597A patent/JPH11159633A/en active Pending
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