JPH11156279A - Processing solution discharge nozzle of substrate treating device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide the processing soln. discharge nozzle of a substrate treating device by which the processing soln. is uniformly discharged over the whole surface of the substrate to be treated. SOLUTION: The processing soln. discharge nozzle 7 is provided with a discharge part 7a formed by arranging the slit discharge ports 7a1 and 7a2 for discharging a developer in parallel on the lower face. When the developer is supplied to the nozzle 7 from a feed pipe 8a, the developer is slowly and uniformly discharged from the whole open face of the discharge ports 7a1 and 7a2 . Further, since the total open area of the discharge part 7a is large, a specified amt. of the developer is discharged in a short time. Accordingly, a specified amt. of the developer is uniformly discharged on the substrate in a short time, and the substrate is uniformly treated.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for treating a substrate such as a semiconductor wafer, a glass substrate for a photomask, a glass substrate for a liquid crystal display, and a substrate for an optical disk by applying a processing liquid to the substrate. The present invention relates to a processing liquid discharge nozzle of a substrate processing apparatus that discharges, and more particularly, to a technique for efficiently discharging a processing liquid to a substrate.

[0002]

2. Description of the Related Art Conventionally, as this type of processing liquid discharge nozzle, for example, a processing liquid discharge nozzle of a substrate developing apparatus which discharges a developing liquid to a semiconductor wafer (hereinafter, simply referred to as a “substrate”) to perform a developing process is known. is there. This processing liquid discharge nozzle will be described with reference to a front view shown in FIG. 10A and a side view shown in FIG.

[0005] The processing liquid discharge nozzle 80 shown in FIG. 10 has a discharge section for discharging the processing liquid to the substrate W on the lower surface thereof. The discharge unit has a single slit-shaped discharge port 80b having a length approximately equal to the diameter of the substrate for discharging the processing liquid toward the substrate W, and the discharge port 80b is provided with a processing liquid discharge nozzle. The processing liquid pool 80, which is the space inside 80
a. The processing liquid discharge nozzle 80 is supported by a support arm 81 having a liquid feed pipe 81a for feeding the processing liquid.
“a” is connected to a processing liquid reservoir 80 a in the processing liquid discharge nozzle 80.

[0004] The support arm 81 is attached to a drive mechanism (not shown) at the base end side. By being driven by this driving mechanism, the processing liquid discharge nozzle supported by the support arm 81 moves forward and backward in the X direction in a horizontal plane above the substrate W.

When the processing liquid discharge nozzle 80 is moved from a standby pot at a standby position (not shown) to a position close to the substrate W, the processing liquid is discharged from a developer tank (not shown) through a liquid feed pipe 81a in a support arm 81. The developer Q is supplied to the reservoir 80a. The developer Q supplied to the processing liquid reservoir 80a is discharged from a slit-shaped discharge port 80b.

Further, the processing liquid discharge nozzle 80
While moving upward in the X direction, the developing solution Q discharged in a strip shape is supplied to the entire processing surface of the substrate W as shown in FIG. The developer Q supplied to the substrate W is held on the substrate W by surface tension as shown in FIG.
It is in a so-called "fluid" state. The developing process using the developing solution Q is performed by the substrate W being stopped for a certain period of time in the state of being filled with the liquid. Thereafter, the substrate W is rotated at a high speed, and after removing the accumulated developer Q, a post-development process such as rinsing is performed, and a series of processes in the substrate developing device is completed.

[0007]

However, the prior art having such a structure has the following problems. In recent years, with the miniaturization of circuit patterns formed on substrates such as semiconductor wafers, the development accuracy of developing circuit patterns printed on resists has also been required to be higher. For example, there is a demand for uniformity of the development processing on the processing surface of the substrate.

In order to perform a uniform developing process on the processing surface of the substrate, it is necessary to satisfy at least the following conditions.
The developer is evenly discharged onto the entire processing surface of the substrate. In addition, a predetermined amount of a developing solution is loaded on the substrate within a short time due to a problem such as a developing reaction speed of the resist film. Further, the developing solution is gently discharged onto the processing surface of the substrate, that is, the developing solution is flown on the substrate at the lowest possible flow rate.

In order to satisfy the above condition, the processing liquid discharge nozzle 80 described in the conventional example discharges the developing solution to the substrate W from the entire slit-shaped discharge port 80b having the entire length corresponding to the diameter of the substrate W. By doing so, a developing solution having a low flow rate is uniformly discharged to the entire processing surface of the substrate W, and a predetermined amount of the developing solution is filled within a predetermined time.

However, with the recent increase in the size of the substrate, the amount of the developing solution on the substrate increases, and a relatively large amount of the developing solution must be supplied to the substrate in a short time. It is necessary to increase the flow rate of the developer discharged from the nozzle 80b. When such a high-velocity developing solution is discharged onto the substrate, the resist film may be damaged, or the flow of the developing solution in the reservoir on the substrate may be relatively intense. This causes a problem that the substrate processing becomes non-uniform.

In order to solve the above problem, it is conceivable to increase the width of the slit-shaped discharge port 80b of the processing liquid discharge nozzle 80 in the short direction. Then, when a predetermined amount of the processing liquid is discharged during a predetermined time, the flow rate of the developer discharged from the discharge port 80b can be reduced by increasing the total opening area of the discharge port. However, the discharge port 80b
If the width is too wide, as shown in FIG. 12, the developer Q discharged from the discharge port 80b gathers near the center of the discharge port 80b and is discharged (downward arrow in FIG. 12). A phenomenon occurs in which the developer is hardly discharged from both end portions of 80b. For this reason, there are portions where the developer does not directly contact both ends on the substrate. The developer supplied to the central portion on the substrate flows into this portion as a result. However, this developing solution is a developing solution that has already been subjected to development at the central portion of the substrate, that is, the developing performance has deteriorated. For this reason, there arises a problem that the uniformity of the developing process is varied between a portion to which the developing solution is directly applied and a portion which is not.

The present invention has been made in view of such circumstances, and is directed to a processing liquid for a substrate processing apparatus capable of discharging a predetermined amount of processing liquid uniformly and slowly over the entire surface of a substrate in a short time. An object is to provide a discharge nozzle.

[0013]

The present invention has the following configuration in order to achieve the above object. That is, the invention according to claim 1 is a processing liquid discharge nozzle of a substrate processing apparatus provided with a discharge part for discharging a processing liquid to a substrate, wherein the discharge part has a plurality of slit-shaped discharge ports substantially parallel to each other. It is characterized by being arranged in a line.

According to a second aspect of the present invention, in the processing liquid discharge nozzle of the substrate processing apparatus according to the first aspect, the processing liquid discharge nozzle further includes a processing liquid reservoir for storing the transmitted processing liquid. Wherein the plurality of slit-shaped discharge ports are formed so as to communicate with the processing liquid reservoir.

According to a third aspect of the present invention, in the processing liquid discharge nozzle of the substrate processing apparatus according to the first aspect, the processing liquid discharge nozzle further comprises a plurality of storage liquids for storing the transmitted processing liquid. A processing liquid reservoir is provided, and each of the slit-shaped discharge ports is formed so as to communicate with each of the processing liquid reservoirs.

According to a fourth aspect of the present invention, in the processing liquid discharge nozzle of the substrate processing apparatus according to the second or third aspect, the processing liquid discharge nozzle is further fed to the processing liquid reservoir. A reversing part for reversing the flow of the processing liquid upward, one end of the reversing part is connected to the upper part of the reversing part, and the other end is reversed to the upward flow by terminating as the slit-shaped discharge port. And a flow path for guiding the treated liquid to a slit-shaped discharge port.

[0017]

The operation of the first aspect of the invention is as follows. When the processing liquid is discharged from a plurality of slit-shaped discharge ports, even if the total opening area of these discharge ports is the same as the opening area of a single wide slit-shaped discharge port, the processing liquid is discharged from each discharge port. , The processing liquid is uniformly discharged from the entire opening surface. This is considered for the following reasons. In the case of a wide slit-shaped discharge port, the flow resistance near the discharge port is relatively small, so the flow rate of the processing liquid from the discharge port is high, and the discharge amount of the processing liquid per unit time is set to be constant. It is considered that, in this case, as a result, the cross-sectional area of the flow of the processing liquid at the discharge port is reduced. On the other hand, in the case of a plurality of slit-shaped outlets, the width in the short direction of each outlet can be narrower than that of a single wide slit-shaped outlet, so that the flow path resistance near each outlet is reduced. Relatively large. As a result, the flow speed of the processing liquid from each discharge port becomes slow, and when the discharge amount of the processing liquid per unit time is set to be constant, as a result, the cross-sectional area of the flow of the processing liquid at each discharge port becomes large. Thus, it is considered that the processing liquid is uniformly discharged from the entire opening surface of each discharge port.

According to the second aspect of the present invention, the processing liquid sent is discharged from each discharge port after being buffered and received by the processing liquid pool. As a result, the processing liquid is uniformly and more slowly discharged from each of the slit-shaped discharge ports.

According to the third aspect of the present invention, the processing liquid that has been sent is buffered and received by each processing liquid pool, and then the slit-shaped discharge port that communicates with each processing liquid pool. It is discharged uniformly from the whole opening surface. As a result, the discharge unit discharges a predetermined amount of the processing liquid within a short time without increasing the flow velocity as a whole. At this time, by supplying the processing liquid to the specific processing liquid pool, the processing liquid is discharged only from the discharge port communicating with the processing liquid pool.

According to the fourth aspect of the present invention, the processing liquid sent to the processing liquid reservoir is reversed by the reversing section into an upward flow. The processing liquid that has been inverted in the upward direction flows into a flow path part that is connected to the upper part of the inversion part. The processing liquid flowing into the flow path is discharged from a slit formed at the end of the flow path. At this time, if air exists due to generation or entry into the processing liquid reservoir, this air is flushed by the processing liquid, and the processing liquid containing this air is discharged from the slit-shaped discharge port.

[0021]

Embodiments of the present invention will be described below with reference to the drawings. <First Embodiment> FIG. 1 is a plan view showing a schematic configuration of a substrate processing apparatus according to an embodiment of the present invention, and FIG. 2 is a side view thereof. In this embodiment, a semiconductor wafer (hereinafter, referred to as a semiconductor wafer)
A substrate developing apparatus provided with a processing liquid discharge nozzle for discharging a developing liquid as a processing liquid to a (substrate) will be described as an example. The present invention is not limited to this, and can be widely applied to a processing liquid discharge nozzle of a substrate processing apparatus that discharges an appropriate processing liquid to a processing surface of a substrate and performs processing on the substrate.

As shown in FIG. 2, this substrate developing device
A spin chuck 1 for holding a substrate W in a horizontal position is provided. The spin chuck 1 is connected to an electric motor 5 via a rotating shaft 3 and is connected to a vacuum line (not shown) to hold the substrate W by vacuum suction. The spin chuck 1 rotates around the rotation center P1 while holding the substrate W by the rotation drive of the electric motor 5.

An inner cup 2 is provided around the spin chuck 1 so as to surround the substrate W held by the spin chuck 1. The inner cup 2 is configured to be able to move up and down by a lifting mechanism (not shown).
When the substrate W is driven to rotate, the liquid developer rises to prevent the developer liquid accumulated on the substrate W from scattering around. At this time, the developer scattered in the inner cup 2 is collected by a waste liquid collecting structure (not shown) provided in the inner cup 2. When the rotation of the substrate W is completed, the inner cup 2 is lowered so as to allow the substrate W to be unloaded from the spin chuck 1. A square outer cup 4 is provided around the inner cup 2.

As shown in FIG. 1, standby pots 6a and 6b are provided on both sides of the outer cup 4 for waiting for a processing liquid discharge nozzle 7 to be described later. Further, a guide rail 10 is provided beside the outer cup 4. A nozzle driving mechanism 9 slidably mounted along the guide rail 10 supports a support arm 8 that cantileverly supports the processing liquid discharge nozzle 7 in a vertically movable manner. By the sliding movement of the nozzle driving mechanism 9, a processing liquid discharge nozzle 7 described later can be moved forward and backward in the X direction.

As shown in FIG. 2, a liquid feed pipe 8a integrally formed inside the support arm 8 is connected to a processing liquid discharge nozzle 7 which is supported by the support arm 8 in a cantilever manner.
Further, the liquid supply pipe 8a is provided at the base end of the support arm 8,
It is connected to a developer supply line 11 a connected to the developer tank 11. In the middle of the developer supply line 11 a, the developer supply line 11
An opening / closing valve 13 for opening and closing a is provided. A nitrogen pressurizing line 11b for pressurizing the developing solution Q stored therein is connected to the developing solution tank 11 connected to the developing solution supply line 11a. The electric motor 5, the nozzle driving mechanism 9, the on-off valve 13, and the like described below are connected to the control unit 12, and the moving amount of the processing liquid discharge nozzle 7, the number of rotations of the substrate W, and the discharge of the developing liquid are controlled. Timing and the like are totally controlled.

Next, the processing liquid discharge nozzle 7 which is a main part of the present invention will be described with reference to FIGS.
FIG. 4 showing an enlarged cross section taken along the line AA of FIG.

This processing liquid discharge nozzle (hereinafter simply referred to as “nose”
7) is a processing liquid on its lower surface facing the substrate W.
An ejection section 7a for ejecting Q is provided. The discharge unit 7a
A plurality of (two in this embodiment) slit-shaped holes
Outlet 7a₁, 7a_TwoAre arranged in parallel.
Has been established. Each slit-shaped discharge port 7a₁, 7a _Two
For example, the width in the short direction is 0.3 to 1.0 mm,
The width in the direction is substantially the same as the diameter of the substrate W (for example, 8 inches).
And 300 mm). In addition, the present invention
It is not limited to this size, and each slit-shaped discharge
The developer can be discharged uniformly from the entire opening surface of the outlet.
I just want to.

As shown in FIG. 4, inside the nozzle 7,
A processing liquid reservoir 7b which receives and stores the developer Q sent from the liquid supply pipe 8a in a buffer manner, and a processing liquid reservoir 7b
Reversing section 7d for reversing the flow of the developing solution Q sent to the upper side, and reversing section 7d for guiding the developing solution Q to the discharge ports 7a ₁ and 7a ₂ formed in the discharging section 7a. And a flow path portion 7c that is connected to and connected to an upper portion of the flow path.

According to the nozzle 7, processing is performed from the liquid sending pipe 8a.
The developing solution Q supplied downward into the processing solution reservoir 7b is processed.
The flow is upward at the reversing part 7d which communicates with the fluid reservoir 7b.
And the flow path is connected to the upper part of the reversing part 7d.
To the discharge port 7a. ₁, 7a_TwoLed to
Discharged. This discharge port 7a₁, 7a_TwoIs the shortest direction
Since the slit shape is narrow, the current
The image liquid is uniformly discharged from the entire opening surface of the discharge port.
You. In addition, the total opening area of the discharge port in the discharge unit 7a is
Is smaller than that of a single discharge port.
Discharge liquid in a short time without increasing flow rate
Can be. Further, the air in the processing liquid reservoir 7b is
The developer Q flowing from the liquid pool 7b into the flow path 7c
And the air does not accumulate in the processing liquid pool 7b
Therefore, it is possible to prevent the developer from dripping. What
In addition, the present invention uses two slits provided in the nozzle 7.
The shape is not limited to the shape of the discharge port.
-Shaped discharge port is provided in the processing liquid discharge nozzle (nozzle 7)
You may.

Next, the operation of the substrate developing apparatus will be described with reference to FIGS. When a substrate W carried in by a substrate transport mechanism (not shown) is placed on the spin chuck 1, the spin chuck 1 suction-holds the substrate W. Almost at the same time, the nozzle driving mechanism 9
The support arm 8 is raised, and the nozzle 7 supported by the support arm 8 is pulled up from the standby pot 6a. Further, when the nozzle drive mechanism 9 moves along the guide rail 10 to move the nozzle 7 to the development processing start position in the outer cup 4, the support arm 8 is lowered to move the nozzle 7 to the processing start height. Bring up to.

Here, the control unit 12 opens the opening / closing valve 13 and supplies the developing solution Q in the developing solution tank 11 to the nozzle 7 through the processing solution supply line 11a and the solution sending pipe 8a. The nozzle 7 discharges the developer Q from the discharge unit 7a at the same time as the developer Q is supplied.

When the developing solution Q starts to be discharged from the nozzle 7, the nozzle driving mechanism 9 moves at a constant speed in the X direction along the guide rail 10 again. Along with this movement, the nozzle 7 discharges the developing solution Q onto the substrate W while moving in the X direction at a constant speed above the substrate W. The discharged developer Q is held on the substrate W by the surface tension (liquid buildup). At this time, the developer Q discharged from the nozzle 7 toward the substrate W is discharged as a band as a whole as described above.

The nozzle 7 passes over the substrate W and
When it comes to a position outside the range, the control unit 12 closes the opening / closing valve 13 and ends the discharge of the developer Q from the nozzle 7. Then, when the nozzle 7 reaches the movement stop position in the outer cup 4, the nozzle driving mechanism 9 stops once, raises the nozzle 7, moves to the other standby pot 6b, and moves the nozzle 7 to the standby pot. 6b.

The spin chuck 1 maintains the developing solution Q, which has been deposited on the substrate W, in this state for a certain period of time. At this time, the developing process is performed on the substrate W with the developing solution Q. After a certain period of time, the spin chuck 1 rotates at a high speed to shake off the developer Q on the substrate W after the inner cup 2 for preventing the developer Q from scattering around. Thereafter, after a post-development process such as rinsing is performed, the inner cup 2 is lowered, the substrate W is unloaded by the substrate transfer mechanism, and a series of development processes is completed. The nozzle 7 periodically discharges the developing solution into the standby pots 6a and 6b in order to eliminate air generated in the processing liquid pool of the nozzle 7 during standby.

As described above, since the nozzle 7 of this substrate developing device uniformly discharges the developing solution to the entire processing surface of the substrate W, uniform processing can be performed on the entire processing surface of the substrate. Further, since there is provided the two ejection ports 7a _1, 7a ₂ to the nozzle 7, can be almost doubled the amount of developer can be discharged as compared with the prior art. That is, when the same amount of the developing solution as in the related art is applied to the substrate, the developing solution can be applied to the substrate in half the discharge time. As a result, the moving speed of the nozzle 7 is increased and a predetermined amount of the developing solution is stored, so that the substrate W
Since the difference in the reaction time due to the developer at one end and the other end of the substrate W can be reduced, it is possible to suppress variations in the development processing on the processing surface of the substrate W. Although not described in this embodiment, the rotation speed of the nozzle can be increased even when the nozzle is rotated in a horizontal plane near the center of the substrate W to fill the substrate W with the developer. Therefore, similarly to the above, it is possible to suppress the variation in the development processing in the processing surface of the substrate W. Further, since the air generated in the processing liquid reservoir of the nozzle 7 is flushed by the developing solution Q flowing from the processing liquid reservoir 7b into the flow path portion 7c, the air does not accumulate in the processing liquid reservoir 7b. . That is, the developer Q
It is also possible to prevent dripping.

The present invention can be modified as follows.

(1) In the first embodiment, in order to eliminate air in the processing liquid reservoir 7b of the nozzle 7, the reversing portion 7d and the flow path portion 7c are connected to the processing liquid reservoir 7b in this order. For example, as shown in FIGS. 5, 6, and 7, a conventional processing liquid discharge nozzle may be provided with two slit-shaped discharge ports. Specifically, the configuration is as follows.

FIG. 5 is a front view of a processing liquid discharge nozzle 70 provided with two discharge ports in a conventional processing liquid discharge nozzle, and FIG. 6 is a bottom view thereof. FIG. 7 is a cross-sectional view of FIG.
It is a figure which shows the arrow cross section. This processing liquid discharge nozzle 70
Is cantilevered by a support arm 81 having a liquid feed pipe 81a, and the liquid feed pipe 81a is, as shown in FIG.
It is connected to the processing liquid reservoir 70a. Liquid supply pipe 81
The developer fed from a is buffer-stored in the processing solution reservoir 70a. Further, by the developing solution sent from the solution sending pipe 81a, the developing solution in the processing solution reservoir 70a is discharged to the discharge portion 7 on the lower surface of the processing solution discharge nozzle 70 shown in FIG.
0b to be discharged from the entire opening surface of the discharge port 70b _1, 70b ₂ of the slit shape formed in communication with the processing liquid reservoir 70a. With this configuration, the developing solution discharged from the discharge port does not gather near the center, and a predetermined amount of the developing solution can be discharged toward the substrate in a short time.

<Second Embodiment> Next, an embodiment using a processing liquid discharge nozzle as shown in FIGS. 8 and 9 will be described. FIG. 8 is a bottom view of the processing liquid discharge nozzle 7 according to the second embodiment. Further, FIG.
It is a figure which shows the -C arrow cross section. Portions common to the first embodiment described above are denoted by the same reference numerals, and description thereof is omitted.

As shown in FIG. 8, near the center of the lower surface of the nozzle 7, there is provided a discharge portion 7 a for discharging the processing liquid Q toward the substrate W. The discharge section 7a is configured such that slit-shaped discharge ports 7a ₁ and 7a ₂ are arranged in parallel with each other. Each slit-shaped discharge port 7a ₁ , 7
The dimensions of a ₂ is the same as the first embodiment.

As shown in FIG. 9, inside the nozzle 7,
8a between liquid feeds₁1st treatment liquid reservoir 7b which communicates with₁When,
8a between liquid feeds_TwoIs connected to the second processing liquid reservoir 7b_TwoAnd
Have. First treatment liquid reservoir 7b₁Has a liquid delivery pipe 8
a₁Reverses the flow of developer Q sent from
Reversing part 7d₁And the developer Q₁Into shape
The formed discharge port 7a₁Reversing part 7d to guide to₁
7c connected to the upper part of the channel₁Are connected in that order
Have been. Second processing liquid reservoir 7b_TwoIs the first process
Pool 7b₁And symmetrically arranged,
_TwoAnd the flow path 7c _TwoAre connected in that order.

First and second processing liquid reservoirs 7b ₁ and 7b ₂
Feeding tube 8a _1, 8a ₂ for feeding the processing liquid Q in are connected respectively to the developing solution supply line 11a _1, 11a _2. In the middle of the developer supply line 11a _1, the control unit 12
The indication, the first on-off valve 13a ₁ for opening and closing the developer supply line 11a ₁ are provided. In the middle of the developer supply lines 11a ₂ also, by the instruction of the control section 12, the second opening and closing valve 13a ₂ is provided for opening and closing the developer supply lines 11a _2.

According to the nozzle 7, the first embodiment will be described.
As described above, each discharge port 7a₁, 7a _TwoFrom the entire opening surface of
The developer is discharged evenly. At this time, the control unit 12
Thus, the first and second opening / closing valves 13a₁13a_TwoBoth
If you open both, a predetermined amount of developer Q can be
Discharge can be performed within a short time from the discharge unit 7a.
Further, the first and second opening / closing valves 13a₁13a_TwoAny of
If one of them is closed, the discharge unit 7a can be
, The discharge amount of the developing solution Q can be halved. did
Therefore, the flow rate of the developing solution discharged toward the substrate is changed.
Without changing the discharge amount of the developer.
Can be processed uniformly on the substrate under various conditions.
Can do so. In this embodiment, the nozzle
7, two processing liquid pools 7b₁, 7b_Two, But the book
The invention is not limited to this, and three or more processing solutions
A reservoir may be provided. In addition, a single
In addition to the one that has a discharge port, two or more for each processing liquid pool
May be provided in communication with each other. Also, this fruit
In the embodiment, two slit-shaped discharge ports are formed on the lower surface of the nozzle 7.
Are arranged side by side near the center of the
Slit-shaped outlets spaced along both long sides of the surface
May be arranged to face each other.

[0044]

As is apparent from the above description, according to the first aspect of the present invention, the discharge section is configured such that a plurality of slit-shaped discharge ports are arranged in parallel. Therefore, the total opening area of the entire discharge port in the discharge section is wider than that of a conventional processing liquid discharge nozzle having a single discharge port. In addition, the slit-shaped discharge ports of the discharge section uniformly discharge the processing liquid having a relatively low flow rate from the entire opening surface of each discharge port. Therefore, a predetermined amount of the processing liquid can be supplied to the substrate in a shorter time than in the conventional example, so that the uniformity of the substrate processing can be improved and the processing efficiency can be improved. Also, at this time, the processing liquid can be gently discharged to the substrate without increasing the flow rate of the developing liquid discharged to the substrate as in the related art, so that the “flushing” of the processing liquid loaded on the substrate can be performed. And the like, the substrate processing can be prevented from becoming non-uniform, and the uniformity of the substrate processing can be further improved. Further, the processing surface of the substrate, for example, the resist film is not damaged.

According to the second aspect of the present invention, the processing liquid sent once is buffered and received in the processing liquid pool, and then the processing liquid is discharged from each of the slit-shaped discharge ports communicating with the processing liquid pool. Therefore, the processing liquid discharged from the entire opening surface of each discharge port can be discharged more slowly.

According to the third aspect of the present invention, since the slit-shaped discharge port is provided for each of the processing liquid pools, the discharge of the processing liquid to an arbitrary processing liquid pool is stopped. As a whole, it is also possible to adjust the amount of the processing liquid discharged to the substrate.

According to the fourth aspect of the present invention, the flow of the processing liquid sent to the processing liquid reservoir is reversed by the reversing section, and the flow path is connected to the upper portion of the reversing section. Flows towards The processing liquid that has flowed into the flow path
It is discharged from each slit-shaped discharge port. In other words, since the air in the processing liquid pool can be discharged by being put on the flow of the processing liquid, the processing liquid drops from the discharge port due to the air in the processing liquid pool, and the processing liquid can be discharged to the substrate processing surface. It is possible to prevent quality deterioration due to the attachment of air (bubbles).

[Brief description of the drawings]

FIG. 1 is a plan view illustrating a schematic configuration of a substrate processing apparatus according to an embodiment.

FIG. 2 is a side view illustrating a schematic configuration of the substrate processing apparatus according to the embodiment.

FIG. 3 is a diagram illustrating a lower surface of a processing liquid discharge nozzle according to the first embodiment.

FIG. 4 is a cross-sectional view of the processing liquid discharge nozzle shown in FIG.

FIG. 5 is a front view of a processing liquid discharge nozzle according to a modified example of the first embodiment.

FIG. 6 is a diagram illustrating a lower surface of a processing liquid discharge nozzle according to a modified example.

FIG. 7 is a cross-sectional view of the processing liquid discharge nozzle shown in FIG.

FIG. 8 is a diagram illustrating a lower surface of a processing liquid discharge nozzle according to a second embodiment.

FIG. 9 is a cross-sectional view of the processing liquid discharge nozzle shown in FIG.

FIG. 10 is a view showing a processing liquid discharge nozzle of a conventional substrate processing apparatus.

FIG. 11 is a view showing a state in which a developing solution is discharged from a processing liquid discharge nozzle having a narrow discharge port in a conventional example.

FIG. 12 is a diagram illustrating a state in which a developing solution is discharged from a processing liquid discharge nozzle having a wide discharge port in a conventional example.

[Explanation of symbols]

1 ... spin chuck 2 ... inner cup 4 ... outer cup 6 ... standby pot 7 ... processing liquid discharge nozzle 7a ... discharge portion 7a _1, 7a ₂ ... discharge port 7b ... treatment liquid reservoir 7c ... flow passage portion 7d ... reversing portion 8 ... Support arm 8a: Liquid feed pipe 9: Nozzle drive mechanism 12: Control unit 8: Support arm 9: Nozzle drive mechanism Q: Developing liquid W: Substrate

Claims (4)

[Claims] 1. A processing liquid discharge nozzle of a substrate processing apparatus provided with a discharge part for discharging a processing liquid to a substrate, wherein the discharge part is arranged such that a plurality of slit-shaped discharge ports are arranged substantially in parallel. A processing liquid discharge nozzle for a substrate processing apparatus, comprising: 2. The processing liquid discharge nozzle of the substrate processing apparatus according to claim 1, wherein the processing liquid discharge nozzle further includes a processing liquid reservoir for storing the processing liquid that has been sent, and A plurality of discharge ports are processing liquid discharge nozzles of the substrate processing apparatus formed in communication with the processing liquid reservoir. 3. The processing liquid discharge nozzle of the substrate processing apparatus according to claim 1, wherein the processing liquid discharge nozzle further includes a plurality of processing liquid reservoirs for storing the transmitted processing liquid. Each of the slit-shaped discharge ports is a processing liquid discharge nozzle of the substrate processing apparatus formed in communication with each of the processing liquid pools. 4. The processing liquid discharge nozzle of the substrate processing apparatus according to claim 2, wherein the processing liquid discharge nozzle further raises a flow of the processing liquid sent to the processing liquid reservoir. An inverting portion that inverts in the direction, and one end side is connected and connected to an upper portion of the inverting portion,
A processing liquid discharge nozzle for a substrate processing apparatus, comprising: a flow path portion that guides a processing liquid inverted to an upward flow to a slit-shaped discharge port by terminating the other end as the slit-shaped discharge port.