JPH11154635A - Electronic line direct protting method and device therefor - Google Patents

Abstract

PROBLEM TO BE SOLVED: To improve a dimension precision of a pattern after etching in the electronic beam lithography. SOLUTION: In data conversion, an etching correction processing is operated in addition to a proximity effect correction processing so that exposure value correction or resize can be operated. Also, correction for changing the exposure value by predicting a pattern after etching in drawing is performed, and a resist pattern is formed so that a pattern dimension after etching can be made further close to designed dimension.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method and an apparatus for directly drawing an electron beam on a pattern of an integrated circuit or the like, and more particularly, to a method for converting directly drawn data and a drawing method.

[0002]

2. Description of the Related Art In recent years, devices have been advanced in the manufacture of semiconductors, and in lithography for forming a fine pattern on a semiconductor wafer, design rules have been miniaturized. For this reason, lithography using X-rays and charged particle beam lithography using a charged particle beam have been developed as next-generation lithography methods as lithography techniques replacing photolithography using ultraviolet light.

In charged particle beam lithography, a pattern is drawn on a wafer by deflecting a beam based on drawing data previously converted from design data. The device pattern is formed by further moving the stage and repeating this operation. Alternatively, the pattern is drawn by deflecting the beam while moving the stage. Here, drawing data in a format corresponding to each drawing device is obtained by performing data conversion from CAD data using various data conversion software.

FIG. 6 is a flow chart showing a conventional direct drawing data conversion process. In the figure, stream data (C
AD data) in the EB data conversion process,
By the pre-processing, the program is converted into intermediate data which can be easily processed, and the overlapping of the figures on the CAD is removed by performing an OR operation. Then, after the proximity effect correction processing is further performed, the data is converted into a data format for an EB device and output as EB direct drawing data.

Conventionally, a pattern after writing is based on design data (C
It is common practice to correct the proximity effect due to the scattering of electrons generated at the time of EB direct writing at the time of this data conversion so that the dimensions become the same as (AD data). Usually, a plurality of chips are drawn on the substrate,
These chips are drawn with the same exposure amount in the case of the same pattern. After the resist pattern is thus formed, etching is performed.

[0006]

However, when a pattern formed by EB direct writing is etched, the pattern dimension after etching differs from the design pattern dimension due to the density of the pattern and the pattern size. There is.

As shown in FIG. 7, when a portion A where patterns are densely packed like an L / S pattern and an area B of a pattern with a very small pattern density like an isolated line pattern are present at the same time, Since the etching rate of the pattern A having a high density is low and the etching rate of the pattern B having a low pattern density is high, the etching does not proceed uniformly, resulting in a dimensional difference in the finished product.

[0008] An example of etching a contact hole pattern as shown in FIG. 8 is shown as an example. It is well known that when the pattern size becomes minute, the etching rate decreases due to the microloading effect. In this case, when the entire pattern is drawn under the optimum conditions for etching fine contacts, a relatively large pattern A
In this case, over-etching occurs, causing shape deterioration and dimensional error.

Further, a dimensional difference occurs in the wafer surface due to a difference in plasma density at the time of etching. In order to solve this problem, it is necessary to optimize the flow rate and direction of the etching gas, the position of the exhaust equipment, the structure of the electrodes, etc. in designing the etching equipment, which leads to an increase in the development period and cost. Have been. In addition, the influence of variations in plasma density at the time of etching cannot be ignored with the miniaturization of patterns.

It is an object of the present invention to improve the dimensional accuracy of a pattern after etching and to form a pattern having a size closer to design data.

[0011]

According to the present invention, there is provided an electron beam direct writing method for converting design data into electron beam direct writing data to perform electron beam direct writing as means for solving the above-mentioned problems. An object of the present invention is to provide an electron beam direct writing method characterized in that the conversion process of the electron beam direct writing data includes a process of correcting a pattern dimension change after etching for each pattern on the design data.

Further, in the process of correcting the pattern dimension change after the etching, there is also provided an electron beam direct writing method, wherein a different exposure amount and / or a different resizing is set for each pattern and the correction is performed.

In a region where the pattern density is high, the exposure amount is small in order to make the resist size smaller than the design size, and the resize is smaller than the actual design size. The electron beam direct writing method is characterized in that the exposure amount is large and the resize is larger than the actual design size in order to make the size larger than the design size.

Further, in an area where the pattern size is small,
In order to make the resist size larger than the design size, the exposure amount is large, the resize is made larger than the actual design size, and in a region where the pattern size is large, the resist size is made smaller than the design size, so that the exposure amount is small. The resizing is made smaller than an actual design size, and is also an electron beam direct writing method.

Further, there is provided an electron beam direct writing method characterized in that writing is performed by changing an exposure amount for each chip arranged in a wafer surface according to a plasma density gradient in an etching apparatus.

Further, when converting the design data into the electron beam direct drawing data, the pattern size change after etching is predicted from the magnitude of the drawing area density and the pattern size. And / or an electron beam direct writing data conversion unit including a process of performing etching correction by performing a resizing process, and a unit for performing electron beam direct writing based on the exposure amount and / or the resizing of the created electron beam direct writing data. And an electron beam direct writing apparatus characterized by having:

Further, in the electron beam direct writing apparatus, the pattern size change after the etching is predicted by using a result simulated by an etching simulator.

Further, the pattern size change after etching is predicted by providing an experimental value data table in which experimental values obtained by experimenting the pattern size change after etching are preliminarily tabulated based on the magnitude of the writing area density and the pattern size.
It is also an electron beam direct writing apparatus characterized in that a predicted value is obtained by comparing with this.

Further, a sensor for detecting a plasma density in the etching apparatus, a drawing control means for controlling an exposure amount based on the detected plasma density information, and a plasma density distribution in the etching apparatus controlled by the drawing control means. An electron beam direct writing apparatus characterized by having a means for performing writing by changing an exposure amount for each chip according to the above.

[Effect] In the present invention, when creating data for direct writing, etching correction processing is performed in addition to the correction processing of the proximity effect due to electron beam scattering at the time of writing, which has been conventionally performed. When performing this etching correction, the pattern dimension change after etching is considered in advance based on the magnitude of the drawing area density and the pattern dimension, and accordingly, 1) exposure amount correction,
2) Perform correction processing such as resize processing. In order to predict the pattern dimension change after the etching, it is effective to use a combination with an etching simulator or to store experimental values in a table in advance.

The data subjected to these processes is output as EB direct drawing data, and drawing is performed. The pattern thus obtained is etched.

In addition to the correction at the time of data conversion, the exposure amount is corrected at the time of drawing.

According to the present invention, it is possible to improve the dimensional accuracy of a pattern after etching and to form a pattern having a size closer to design data.

Hereinafter, the operation of the present invention will be described in more detail.

Conventionally, in EB direct drawing, first, design data is
The data is converted into B-direct drawing data, and drawing is performed using this data. Proximity effect correction processing due to electron beam scattering is performed during data conversion so that the pattern to be drawn has dimensions as designed. Usually, a plurality of chips are drawn on the substrate, but these chips are all drawn with the same exposure amount. After the resist pattern is thus formed, etching is performed.

However, when a pattern formed by EB direct writing is etched, the pattern size after etching differs from the design pattern size due to the density of the pattern or the difference in plasma density at the time of etching.

This is because a change in pattern dimension due to etching is not considered in advance.

Therefore, in the present invention, in performing the EB direct drawing data conversion, in addition to the proximity effect correction processing, the pattern dimension change after etching is considered in advance, and the exposure amount correction, resizing, and other corrections are performed accordingly. Perform processing. The data subjected to these processes is output as EB data to perform drawing.

Further, at the time of EB writing, writing is performed by changing the exposure amount of a chip arranged in the substrate surface according to the plasma density of the etching apparatus.

As a result, the dimensional accuracy of the pattern after etching can be improved, and a pattern having dimensions closer to the design data can be formed.

As described above, the present invention is characterized in that not only the correction of the proximity effect but also the pattern variation factor at the time of etching is corrected from the stage of EB data conversion in consideration of the shape after etching. Have.

[0032]

[Embodiment 1] Embodiment 1 of the present invention will be described with reference to the drawings. FIG. 1 shows an example of the present invention, E.
9 shows a flow of a method for creating B direct drawing data. In FIG. 1, the point different from the portion described in the conventional example of FIG. 6 is that an etching correction process is added. Hereinafter, the etching correction process will be described.

In the pattern data shown in FIG. 2, there are two regions having different pattern writing densities.

In the region A where the pattern writing density is large, ions during etching are less likely to enter the pattern, so that the etching rate is reduced. When converting the pattern data, an etching correction process is performed subsequent to the proximity effect correction process. In this embodiment, corrected EB direct-drawing data is created by applying an optimum exposure value obtained in advance by experiment to each region according to the drawing area density.

When the drawing is performed using this data, the region A is drawn so that the pattern after the drawing becomes smaller than the design size because the etching hardly proceeds.

In addition, instead of the exposure amount correction, the size of the exposure pattern is resized from the CAD data to a size that allows for the correction value, and the exposure is performed with the resized pattern. The effect of is obtained.

In this embodiment, as shown in FIG. 2, in a region where the pattern density is high, the resist size is made smaller than the design size, so that the exposure amount is small or the resize is made smaller than the actual design size. Further, in a region where the pattern density is low, the exposure amount is large or the resize is larger than the actual design size in order to make the resist size larger than the design size.

[Second Embodiment] The conversion data creation flow of this embodiment is the same as the flow of the EB direct drawing data creation method of FIG.

In the pattern data shown in FIG. 3, there are two regions having different pattern sizes such as contact holes.

In the region A having a small pattern size, the etching rate is reduced due to a microloading effect at the time of etching. When converting the pattern data, an etching correction process is performed subsequent to the proximity effect correction process. In the present embodiment, an optimum exposure value obtained by an experiment in advance is applied to each region according to the pattern size.

When drawing is performed using this data, the pattern in the region A is drawn larger than the design size so that the etching rate is improved.

The same effect can be obtained by performing resizing processing instead of exposure amount correction. In this embodiment, FIG.
As shown in (1), in regions where the pattern size is small, the resist size is made larger than the design size, so that the exposure amount is large or the resize is made larger than the actual design size. Also, in regions where the pattern size is large, the exposure amount is small to make the resist dimensions smaller than the design dimensions,
Alternatively, the resize is made smaller than the actual design size.

[Embodiment 3] FIG. 4 shows an example E of the present invention.
1 shows a direct drawing apparatus and a drawing method.

The direct drawing data converted from the design pattern (stream data) is sent to the drawing control unit of the apparatus.
The apparatus is provided with a substrate 10 dedicated to etching correction processing.

The pattern transferred to the apparatus is blank-drawn once, and the writing area density is examined. On the substrate dedicated to the etching correction process, a parameter table of the optimum exposure amount for each drawing area density obtained in advance by an experiment is prepared, and a different exposure amount is applied to each pattern based on the table value.

By performing writing in this way, it is possible to correct a pattern dimension change due to etching even when writing data for which etching correction has not been performed during data conversion.

[Embodiment 4] FIG. 5 shows an example E of the present invention.
B shows the direct drawing method. The plasma density in the etching apparatus is determined by the sensor 1 installed in the chamber 19.
3 is monitored. This information is sent to the control section of the EB direct writing apparatus, and is fed back to the exposure amount at the time of exposure.

A plurality of chips are drawn on the surface of the wafer 15. At this time, the drawing is performed by changing the exposure amount for each chip according to the distribution of the plasma density in the etching apparatus. Etching does not proceed where the plasma density at the time of etching is small, and is over-etched where it is large. Therefore, in the case of the contact pattern, FIG.
As shown in the figure, depending on the position on the wafer, the exposure amount is adjusted so that the exposure amount is small in the region where the plasma density is large, and the exposure amount is increased in the region where the plasma density is small, and the contact diameter becomes large in the portion where the plasma density is small. To draw.

Thus, etching can be performed regardless of the distribution of plasma density in the etching apparatus.

[0050]

According to the present invention, by predicting and correcting the pattern shape after etching, the resist pattern size can be formed in accordance with the pattern shape. Therefore, the dimensional accuracy of the pattern after etching can be improved. A pattern with dimensions closer to the design data can be formed.

Also, by feeding back the plasma density information in the etching apparatus at the time of EB direct drawing, the dimensional accuracy of the pattern in the wafer surface can be improved, and a pattern having a size closer to the design data can be formed.

Further, since there is no need to make the distribution of plasma density uniform during etching, the development time and cost of the etching apparatus can be reduced.

[Brief description of the drawings]

FIG. 1 is a flowchart illustrating a first embodiment of the present invention.

FIG. 2 is a diagram illustrating an etching pattern according to the first embodiment of the present invention.

FIG. 3 is a diagram illustrating an etching pattern according to a second embodiment of the present invention.

FIG. 4 is a schematic configuration diagram of a third embodiment of the present invention.

FIG. 5 is a schematic configuration diagram of a fourth embodiment of the present invention.

FIG. 6 is a flowchart illustrating a conventional technique.

FIG. 7 is an etching pattern diagram illustrating a conventional technique.

FIG. 8 is an etching pattern diagram illustrating a conventional technique.

[Explanation of symbols]

 Reference Signs List 1 area with high pattern density 2 area with low pattern density 3 resist pattern 4 pattern (substrate) after etching 5 area with large pattern size 6 area with small pattern size 7 design dimension 8 resist dimension (finished dimension) 9 EB drawing control unit DESCRIPTION OF SYMBOLS 10 Etching correction unit 11 EB exposure part 12 Monitoring device 13 Sensor 14 Etching gas supply port 15 Stage 16 Exhaust port 17 Wafer 18 Drawing chip 19 Etching chamber

Claims (9)

[Claims] 1. An electron beam direct writing method for converting design data into electron beam direct writing data to perform electron beam direct writing, wherein the conversion process of the electron beam direct writing data includes the steps of: On the other hand, an electron beam direct writing method characterized by including a process of correcting a pattern dimension change after etching. 2. The method according to claim 1, wherein in the process of correcting the pattern dimension change after the etching, a different exposure amount and / or a different resize setting is set for each pattern. How to draw. 3. In a region where the pattern density is high, the exposure amount is small to make the resist size smaller than the design size. The resize is smaller than the actual design size. 3. The electron beam direct writing method according to claim 2, wherein the exposure amount is large, and the resizing is made larger than an actual design size in order to make the size larger than a design size. 4. In a region where the pattern size is small, the exposure amount is large in order to make the resist size larger than a design size, and the resize is larger than an actual design size. 3. The electron beam direct writing method according to claim 2, wherein the exposure amount is small, and the resizing is smaller than an actual design size in order to make the size smaller than a design size. 5. An electron beam direct writing method, wherein writing is performed by changing an exposure amount for each chip arranged in a wafer surface according to a plasma density gradient in an etching apparatus. 6. When converting design data into electron beam direct writing data, a pattern size change after etching is predicted from the magnitude of the drawing area density and the pattern size. And / or an electron beam direct writing data conversion unit including a process of performing etching correction by performing a resizing process, and an electron beam direct writing unit based on an exposure amount and / or a resize of the created electron beam direct writing data. An electron beam direct-writing apparatus comprising: 7. The electron beam direct writing apparatus according to claim 6, wherein the prediction of the pattern dimension change after the etching uses a result simulated by an etching simulator. 8. The method for predicting the pattern dimension change after etching includes an experiment value data table in which experimental values obtained by experimenting the pattern dimension change after etching are preliminarily tabulated based on the magnitude of the writing area density and the pattern dimension. The electron beam direct writing apparatus according to claim 6, wherein a predicted value is obtained by comparing. 9. A sensor for detecting a plasma density in an etching apparatus, a drawing control means for controlling an exposure amount based on the detected plasma density information, and a distribution of a plasma density in the etching apparatus under the control of the drawing control means. Means for performing drawing by changing the exposure amount for each chip in accordance with the method.