CN105590877A - Data correcting apparatus, drawing apparatus, inspection apparatus, data correcting method, drawing method, inspection method and recording medium - Google Patents
Data correcting apparatus, drawing apparatus, inspection apparatus, data correcting method, drawing method, inspection method and recording medium Download PDFInfo
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- CN105590877A CN105590877A CN201510765872.1A CN201510765872A CN105590877A CN 105590877 A CN105590877 A CN 105590877A CN 201510765872 A CN201510765872 A CN 201510765872A CN 105590877 A CN105590877 A CN 105590877A
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- 238000007689 inspection Methods 0.000 title claims abstract description 23
- 238000005530 etching Methods 0.000 claims abstract description 285
- 238000012937 correction Methods 0.000 claims abstract description 100
- 238000003860 storage Methods 0.000 claims abstract description 26
- 238000005192 partition Methods 0.000 claims description 70
- 238000013461 design Methods 0.000 claims description 66
- 238000012545 processing Methods 0.000 claims description 64
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- 230000008569 process Effects 0.000 claims description 10
- 238000001514 detection method Methods 0.000 claims description 9
- 238000013500 data storage Methods 0.000 claims description 7
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- 230000000052 comparative effect Effects 0.000 description 2
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- 238000005260 corrosion Methods 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
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- 101100352902 Dictyostelium discoideum canA gene Proteins 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
- G06T7/00—Image analysis
- G06T7/0002—Inspection of images, e.g. flaw detection
- G06T7/0004—Industrial image inspection
- G06T7/0006—Industrial image inspection using a design-rule based approach
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
- G06T2207/00—Indexing scheme for image analysis or image enhancement
- G06T2207/10—Image acquisition modality
- G06T2207/10004—Still image; Photographic image
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
- G06T2207/00—Indexing scheme for image analysis or image enhancement
- G06T2207/30—Subject of image; Context of image processing
- G06T2207/30108—Industrial image inspection
- G06T2207/30141—Printed circuit board [PCB]
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- Quality & Reliability (AREA)
- Computer Vision & Pattern Recognition (AREA)
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- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
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- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The invention relates to a data correcting apparatus, a drawing apparatus, an inspection apparatus, a data correcting method, a drawing method, an inspection method and a recording medium. The etching characteristic storage part of the data correcting apparatus stores the etching characteristic of each of a plurality of object positions on an object as an object etching characteristic. A characteristic set acquisition part divides the plurality of object positions into a specific number of characteristic groups through storing the object positions which correspond with mutually similar object etching characteristics into one characteristic group, wherein the specific number is smaller than the number of the plurality of object positions. A dividing data correction part divides designing data of a pattern which is formed on the object through etching to a plurality of divided data that correspond with the plurality of dividing areas on the object. Furthermore each divided data are corrected based on the etching characteristic which represents one characteristic group affliated to an object position that is closest to the dividing area that corresponds with the divided data. Therefore, high-precision etching correction can be performed.
Description
Technical field
The present invention relates to a kind of skill of revising be formed on the design data of the pattern on object by etchingArt.
Background technology
In the past, in semiconductor substrate or printed base plate or plasma display system or liquid crystal indicator glass-basedIn the processing procedure of plate etc. (hereinafter referred to as " substrate "), substrate is implemented to various processing. For example,, by against corrosion to being formed with from the teeth outwardsThe substrate of the pattern of agent is implemented etching and on substrate, is formed Wiring pattern. In this etching, the density by pattern arrangement orThe size of pattern etc., and there is the shape situation different from design data that is formed on the pattern on substrate.
In No. 3074675 communique of Japan Patent, disclose and have following technology, by utilizing electron beam directly to draw dressPut and on substrate, form resist pattern, and utilize plasma etching apparatus to carry out etching and form pattern. In addition, propose to haveProduce electron beam according to the design data of pattern and directly draw with in the processing of data, comprise and revise by micro loading effect(microloadingeffect) processing of the variation of the pattern dimension after the etching due to.
In No. 4274784 communique of Japan Patent, propose to have the view data and the design number that use the substrate after etchingAccording to, produce the adjusted size rule that represents must how to revise in order to obtain required etching metacoxal plate design data(resizingrule)。
In Japanese Patent Laid-Open 2008-134512 communique, disclose and have a following method: in the time making light shield, for oftenInterval (distance) between one pattern and specify in order to revise overetched correction value. In addition, propose to have at straight-line pattern and circular arcIn the situation of pattern subtend, the position of this subtend is applied to further correction.
In Japanese Patent Laid-Open 2013-12562 communique, disclose and have a following technology: in one side according to conductive patternDesign data and consider that lateral erosion carves one side while making contour shape (outer shape of conductive pattern), based on the contour shape of adjacencyBetween distance and set correction value.
Japanese Patent Laid-Open 2013-250101 communique relates to a kind of defect inspection of the Wiring pattern forming by etchingLook into. In this defect inspection, measure etching information (etch plot) from the lip-deep mensuration pattern that is formed on substrate, and makeDesign data is carried out etching simulation and produced inspection data by this etch plot. Then, by by the Wiring pattern on substrateView data detect the defect of Wiring pattern with checking data to contrast. In the literature, propose to have be set in printingMultiple inspection areas of the upper surface of substrate configure respectively 1 mensuration pattern, and obtain the etch plot that each inspection area is used.In inspection area, comprise multiple identical single partial patterns, the erosion that these multiple single partial patterns are used based on this inspection areaCarve curve and similarly revise.
In recent years, in carrying out the etched device of substrate, multiple identical to disposing in order to improve productivityPartly the large substrate of (piece) (pattern) carries out etching. Therefore, etching characteristic is according to the position on substrate and difference, even ifBe the etching to same section, also have the different situation of etching result. In this case, also consider to obtain erosion for each several partCarve characteristic, and carry out the correction (etching correction) of data based on this etching characteristic, but the etching correction of all parts is neededLong period.
Summary of the invention
The present invention is suitable for the data that the design data to be formed on the pattern on object by etching revises and repaiiesEquipment, its object is that efficiency carries out high-precision etching correction goodly.
Data correction device of the present invention comprises: design data storage part, storage is formed on object by etchingThe design data of pattern; Etching characteristic storage part, by each person's of the multiple object's positions on described object etchingCharacteristic is as object etching characteristic, and storage is for multiple object etching characteristics of described multiple object's positions; Characteristic group obtainsGet portion, by being contained in 1 characteristic group with the object's position that similarly object etching characteristic is corresponding mutually, and described in inciting somebody to actionMultiple object's positions are divided into the characteristic group of the specific quantity fewer than described multiple object's positions; And partition data correction portion, willDescribed design data is divided into the multiple partition datas corresponding with being set in multiple cut zone on described object, and to respectivelyA spy under the immediate object's position of partition data based on the representative cut zone corresponding with described each partition dataThe etching characteristic of property group and revising.
According to the present invention, can efficiency carry out high-precision etching correction goodly.
In a preferred configuration of the present invention, described characteristic group acquisition unit comprises: group's characteristic acquisition unit, obtain with respectivelyCharacteristic group sets up associated etching characteristic as group's etching characteristic; And grouping handling part, based on representing each object etchingThe value of the similar degree of the described group etching characteristic of characteristic and described each characteristic group, and carry out by with described each object etching spyObject's position corresponding to property is contained in any one the grouping processing in the characteristic group of described specific quantity.
In this case, more preferably, described characteristic group acquisition unit also comprises repetition control part, and this repetition control part makesUtilize the described group who obtains and utilize described grouping handling part of the described group etching characteristic of described group characteristic acquisition unitGroupization is processed and is repeated until meet specified conditions, and described group characteristic acquisition unit is according to by last described groupChange and process and be included in the object etching characteristic of the object's position in described each characteristic group, and obtain described each characteristic groupDescribed group etching characteristic.
In another preferred configuration of the present invention, what described multiple partition datas of described design data represented respectively cuts apartPattern is identical.
In an aspect of the present invention, data correction device also comprises object etching characteristic acquisition unit, this object etching spyProperty acquisition unit is for each person of the multiple reference positions on described object and obtain in advance benchmark etching characteristic, and for instituteState each person of multiple object's positions, the position relationship based on each object's position and described multiple reference positions and to described multiple basesMultiple benchmark etching characteristics that level is put are weighted, and described multiple benchmark etching characteristics based on after being weighted and askingGo out the described object etching characteristic of described each object's position.
In another aspect of the present invention, data correction device also comprises group's quantity determination section, and this group's quantity determinesPortion is the each person for multiple interim groups quantity, and described characteristic group acquisition unit is divided into groups, and obtains and represents to represent Ge TeProperty group etching characteristic, with the value of diversity factor of object etching characteristic of all object's positions that belongs to described each characteristic groupAll characteristics group and as evaluation of estimate, and be the minimum interim group quantity below specific threshold by described evaluation of estimateDetermine as described specific quantity.
The present invention is also suitable for drawing the describing device of pattern on object. Describing device of the present invention comprises: described numberAccording to correcting device; Light source; Modulating sections, based on modulating from described by the design data of described data correction device correctionThe light of light source; And sweep mechanism, the light that scanning has been modulated by described modulating sections on object.
The present invention is also suitable for checking the testing fixture that is formed on the pattern on object by etching. Inspection of the present inventionDevice comprises: described data correction device; Real image storage part, storage is formed on pattern on object by etchingView data is check image data; And defects detection portion, by the design number that utilizes the correction of described data correction deviceAccording to comparing with described check image data, and detect the defect that is formed on the described pattern on described object.
The present invention is also suitable for revising the data correction side that is formed on the design data of the pattern on object by etchingMethod, on object, draw pattern discharge drawing method, check by etching be formed on the pattern on object inspection method,And record is to being formed on the recording medium of the program that the design data of the pattern on object revises by etching.
Described object and other objects, feature, form and advantage can be by carrying out referring to alterations thisBright detailed description and become clear.
Brief description of the drawings
Fig. 1 is the figure that represents the formation of the describing device of the 1st embodiment.
Fig. 2 is the figure that represents the formation of data processing equipment.
Fig. 3 is the block diagram that represents the function of data processing equipment.
Fig. 4 is the figure that represents the flow process of drawing of utilizing describing device.
Fig. 5 is the top view of test base.
Characteristic is obtained the figure representing with the part amplification of pattern by Fig. 6.
Fig. 7 amplifies a part of measuring pattern and the figure of expression.
Fig. 8 is the figure that represents etch plot.
Fig. 9 is the figure that represents the object's position comprising in each characteristic group.
Figure 10 is the figure that represents layout.
Figure 11 represents reference position on test base and the figure of object's position.
Figure 12 is the block diagram that represents the function of the testing fixture of the 2nd embodiment.
Figure 13 is the figure that represents a part for the flow process of the inspection that utilizes testing fixture.
Detailed description of the invention
Fig. 1 is the figure that represents the formation of the describing device 1 of the 1st embodiment of the present invention. Describing device 1 is by establishingPut at the lip-deep photosensitive material of (being designated hereinafter simply as " substrate 9 ") such as printed base plate, semiconductor substrate, crystal liquid substrates against corrosionAgent film light irradiation, and the direct direct describing device of drawing the images such as circuit pattern on resist film. To utilizing describing device 1Draw figuratum substrate 9, implement development, etching (omitting diagram) such as substrate board treatments. Thus, on substrate 9, formPattern. For example by giving to substrate 9 Wet-type etching that etching solution carries out to the etching of substrate 9. In addition, as to substrate9 etching, for example, also can utilize the dry-etching of plasma etc.
Describing device 1 comprises data processing equipment 2 and exposure device 3. Data processing equipment 2 is revised and is drawn on substrate 9Pattern design data and produce describing data. The describing data of exposure device 3 based on sending from data processing equipment 2 and enteringDraw (i.e. the exposure) of row to substrate 9. As long as data processing equipment 2 and exposure device 3 can carry out data between stream oriented deviceGive and accept, can physically separate, certainly also can arrange integratedly.
Fig. 2 is the figure that represents the formation of data processing equipment 2. Data processing equipment 2 becomes the structure of general computer systemBecome, comprise the CPU (CentralProcessingUnit, central processing unit) 201, the storage base that carry out various calculation processROM (ReadOnlyMemory, the read-only storage) 202 of this program and the RAM (RandomAccess of storing various informationMemory, random access memory) 203. Data processing equipment 2 also comprises: fixed disk 204, carries out information storage; Display205, carry out the demonstration of the various information such as image; Keyboard 206a and mouse 206b, accept the input from operator; Read/writeEnter device 207, the recording medium 8 that can read from computers such as laser disc, magnetic disc, magnetic optical discs carries out reading and writing of information;And Department of Communication Force 208, and describing device 1 etc. other form between receiving and transmitting signal.
In data processing equipment 2, also store from recording medium 8 read routines 80 via read/write device 207 in advanceIn fixed disk 204. CPU201 is by utilizing RAM203 or fixed disk 204 one sides to carry out calculation process according to program 80 one sides(passing through executive program) realizes following function.
Fig. 3 is the block diagram that represents the function of data processing equipment 2. In Fig. 3, indicate to be in the lump connected to data processing dressPut a part (drawing controller 31) for the formation of 2 exposure device 3. Data processing equipment 2 comprises data correction portion 21 and numberAccording to converter section 22. Data correction portion 21 is revised the design data that is formed on the pattern on substrate 9 by etching. DataCorrection portion 21 comprises design data storage part 211, etching characteristic storage part 212, characteristic group acquisition unit 213 and partition dataCorrection portion 217. Characteristic group acquisition unit 213 comprises group's characteristic acquisition unit 214, grouping handling part 215 and repeats control part216. Data converter section 22 is inputted by the revised design data of data correction portion 21 (hereinafter referred to as " having revised complete numberAccording to "). Revise complete data and be generally polygon isovector data. Data transaction portion 22 is using repairing as vector dataJust complete data transaction becomes the describing data as register data. In addition the object erosion that, utilizes the rectangle of dotted line to represent in Fig. 3The function of carving characteristic acquisition unit 218 and group's quantity determination section 219 is to be used in following processing example. Data processing equipment 2Function can realize by special circuit, also can use partly special circuit.
As shown in Figure 1, exposure device 3 comprises and draws controller 31, microscope carrier 32, light outgoing portion 33 and sweep mechanism 35. RetouchDraw controller 31 and control light outgoing portion 33 and sweep mechanism 35. Microscope carrier 32 keeps substrate 9 below light outgoing portion 33. Light goes outPenetrate portion 33 and comprise light source 331 and modulating sections 332. Light source 331 is towards modulating sections 332 shoot lasers. Modulating sections 332The light of modulation from light source 331. Be irradiated to the substrate 9 on microscope carrier 32 by the light after modulating sections 332 modulation. As lightModulation portion 332, for example, can utilize the DMD (DigitalMirrorDevice, the number that are arranged with two-dimensionally multiple optical modulation elementsWord micro mirror element). Modulating sections 332 also can be modulator being arranged with one-dimensionally multiple optical modulation elements etc.
Sweep mechanism 35 makes microscope carrier 32 move in horizontal direction. Particularly, by sweep mechanism 35 make microscope carrier 32 inMain scanning direction and the sub scanning direction vertical with main scanning direction move. Thus, by the light after modulating sections 332 modulationOn substrate 9, scanned in main scanning direction and sub scanning direction. In exposure device 3, also can arrange and make microscope carrier 32 flatlyThe rotating mechanism of rotation. In addition, the elevating mechanism that light outgoing portion 33 is moved in above-below direction also can be set. 35 of sweep mechanismsWant on substrate 9, to scan the light from light outgoing portion 33, need not be the mechanism that microscope carrier 32 is moved. For example,Also can light outgoing portion 33 be moved above microscope carrier 32 along main scanning direction and sub scanning direction by sweep mechanism 35.
Next, one side is with reference to Fig. 4, and one in the face of utilizing the flow process of drawing of describing device 1 to describe. First, toOn one interarea, be formed with the substrate of the test use of resist film (with the substrate of drawing 9 in following step S20 for identicalShape and size, hereinafter referred to as " test base "), draw specific test pattern by exposure device 3.
Fig. 5 is the top view that represents to draw by exposure device 3 the test base 9a of test pattern 93. In fact,Test pattern 93 on test base 9a can be by implementing development treatment with the form of resist pattern by depending on recognizing. ThisPlace, by the position of each graphical element of the test pattern of Fig. 5 93, shape, size be made as the design data used with test pattern (butTo utilize the correction of data correction portion 21) represented pattern strict conformance. , the test pattern 93 of Fig. 5 also justThe represented pattern itself of design data that test pattern is used. The test base 9a of Fig. 5 is rectangle, in Fig. 5, and will be along test baseThe direction indication on 2 mutually orthogonal limits of plate 9a is x direction and y direction.
Test pattern 93 comprises multiple characteristics and obtains with pattern 95. In Fig. 5, utilize rectangle characterization to obtain and use pattern95. It is the processing such as peel off and finally become in order to survey through development, etching, resist that multiple characteristics are obtained with each person of pattern 95Determine the predetermined pattern of drawing of the mensuration pattern of etching characteristic. In the example of Fig. 5, multiple characteristics obtain with pattern 95 be in x directionAnd the arranged with interval of y direction to fix. For example, if the each characteristic of configuration is obtained to position (central authorities of this pattern) P with pattern 95Be called " object's position ", on test base 9a, be set with multiple object's position P. Object's position P's on test base 9aNumber is for example more than 4, to be preferably more than 9. Each characteristic is obtained and is comprised multiple graphical elements with pattern 95. In Fig. 5, showShow that it is to comprise all roughly rectangles of minimum of the plurality of graphical element that characteristic is obtained with the rectangle of pattern 95.
Characteristic is obtained the figure representing with the part amplification of pattern 95 by Fig. 6. In the example shown in Fig. 6, characteristic obtainsTake pattern 95 and comprise multiple the 1st graphical element groups 951. Each the 1st graphical element group 951 comprises in parallel to each other roughly along y sideTo 2 articles of the 1st graphical elements 952 of linearity roughly that extend. 2 article of the 1st graphical element 952 in each the 1st graphical element group 951Between gap width G (i.e. the width in the gap in the x direction vertical with length direction of 2 article of the 1st graphical element 952), with itThe gap width G difference that 2 article of the 1st graphical element in he the 1st graphical element group 951 is 952.
By the development treatment to test base 9a, represent the against corrosion of test pattern 93 and be formed with on test base 9aAgent pattern. Then, test base 9a is implemented to etching using this resist pattern as mask, and then implement that resist is peeled off etc.Process, on the interarea of test base 9a, be formed with thus the multiple characteristics of expression and obtain the multiple mensuration patterns with pattern 95.
Fig. 7 is by the figure that obtains the part amplification of the mensuration pattern 96 corresponding with pattern 95 with characteristic and represent. MeasurePattern 96 comprises multiple the 2nd graphical element groups 953 that represent respectively multiple the 1st graphical element groups 951. In Fig. 7, by 1 the 2ndGraphical element group 953 amplifies and represents. Each the 2nd graphical element group 953 comprises corresponding with 2 article of the 1st graphical element 952 roughly straight2 article of the 2nd graphical element 954 of wire. The 2nd graphical element 954 is the portions that utilize the 1st graphical element 952 in resist patternPosition also forms by etching. In Fig. 7, utilize 2 chain lines to represent in the lump the outline line of the 1st graphical element 952.
Herein, by each the 2nd figure in the gap of 954 of 2 article of the 2nd graphical elements in each the 2nd graphical element group 953 of formationThe limit (position of outline line) of key element 954, and corresponding to the distance between the limit of the 1st graphical element 952 on this limit (with form shouldThe distance of the vertical direction in the position of the outline line in gap) be called etch quantity Et. Etch quantity Et represents this 2 article of the 2nd graphical elementThe limit of the 2nd graphical element 954 in the gap of 954 with respect to the amount of movement on the limit of each the 1st graphical element 952 (outline lineThe one-sided amount of attenuating). Etch quantity Et depends upon between 2 article 1st graphical element 952 corresponding with this 2 article of the 2nd graphical element 954Gap width G and change. The relation of gap width G and etch quantity Et is to obtain by the following method: take test base 9aMeasure the image of pattern 96 and obtain, and relatively this image and characteristic are obtained the design data of use pattern 95.
Fig. 8 is the figure that represents etch plot, and this etch plot represents the relation of gap width G and etch quantity Et. At Fig. 8In, 2 etch plot label symbol E1, E2 are represented. In etch plot, along with gap width, G diminishes, and etch quantity Et alsoDiminish gradually. In gap width G is large to a certain degree scope, etch quantity Et and gap width G are roughly in direct ratio, but work asWhen gap width G diminishes, with respect to reducing of gap width G and etch quantity Et reduces rapidly. In other words, work as gap widthWhen G diminishes, it is large that the slope of etch plot becomes.
Obtain with in pattern 95, due to the position on test base 9a (being object's position P) difference, therefore in multiple characteristicsAs 2 of Fig. 8 etch plot E1, E2, there is the mutually different situation of shape of etch plot. In this processing example, from manyIndividual characteristic is obtained and is obtained respectively many etch plot with pattern 95. In other words, obtain many erosions for multiple object's position PCarve curve. In addition,, in Fig. 8, utilize four angle points of black or white to represent on each the 1st graphical element group's 951 gap width GEtch quantity Et. Obtain with in pattern 95 in multiple characteristics, size or the number of measuring the gap width G of etch quantity Et can be not yetWith.
Characteristic is obtained and also can be comprised the graphical element of the various shapes except rectangle and the figure of various combinations with pattern 95Shape key element group. For example, also can make characteristic obtain and comprise the different multiple circular pattern key elements of diameter with pattern 95, and obtain expressionThe etch plot of the diameter of circular pattern key element and the relation of etch quantity. About the kind of this etch plot, also can obtain withMultiple object's position P are many etch plot of correspondence respectively. In the following description, by with test base 9a and substrate 9 onCorresponding 1, each position or many etch plot are referred to as " etching characteristic ", and the etching characteristic corresponding with object's position P claimedFor " object etching characteristic ". Etching characteristic is illustrated in typically the figure adjoining each other in the represented pattern of design data and wantsThe width in the gap (design gaps) between element, and the pattern that forms by etching in this graphical element between gap (realityGap) the relation of width.
In describing device 1, corresponding with each object's position P 1 or many etch plot are stored in to described etching spyProperty storage part 212. , the multiple object etching characteristics for multiple object's position P are stored in to etching characteristic storage part 212For following processing prepare (step S11). In addition, multiple object etching characteristics can obtain at the device except describing device 1Get, also can obtain at describing device 1. In in the situation that describing device 1 obtains object etching characteristic, arrange at describing device 1Obtain the image pickup part of the image of measuring pattern 96 (with reference to Fig. 7) and obtain and use pattern based on measuring the image of pattern 96 and characteristicThe design data of 95 (with reference to Fig. 6) and obtain the object etching characteristic of each object's position etching characteristic operational part (the 2nd implementSame in the testing fixture 1a of mode).
In group's characteristic acquisition unit 214 of characteristic group acquisition unit 213, the number of decision characteristic group (hereinafter referred to as" set group's quantity ") (step S12). Herein, characteristic group only comprises with similarly object etching characteristic is corresponding mutuallyThe set of object's position P. For example set group quantity and be based on operator via input part (keyboard 206a and mouse 206b etc.)Input and determine. Setting group's quantity also can predetermine.
Then, the object's position P of the specific amount that goes out to set group's quantity randomly, and be respectively allocated to setting group quantityCharacteristic group. Using the object etching characteristic of object's position P that is assigned to each characteristic group as setting up with this characteristic groupAssociated etching characteristic (hereinafter referred to as " group's etching characteristic ") is processed (step S13). In grouping handling part 215, askGo out to represent the value (two of the similar degree of the object etching characteristic of each object's position P and group's etching characteristic of each characteristic group herein,Person's the higher value of similar degree is larger, hereinafter referred to as " similar degree evaluation of estimate ").
For example,, at the etch plot of object etching characteristic and the group's etching characteristic of certain characteristic group of certain object's position PEtch plot be in the situation of etch plot E1, E2 in Fig. 8, each person of multiple gap widths of predetermining, obtain 2Poor (absolute value) d of the etch quantity Et of bar etch plot E1, E2. Then, obtain this difference in multiple gap widths d's and conductDistance between these 2 etch plot E1, E2. In the situation that object etching characteristic only comprises a kind of etch plot, this distanceBecome described similar degree evaluation of estimate. In the situation that object etching characteristic comprises multiple etch plot, this of multiple etch plotDistance and become described similar degree evaluation of estimate.
If for each object's position P, obtain and each person's the similar degree evaluation of estimate of characteristic group of setting group's quantity,This object's position P is dispensed to similar degree evaluation of estimate and becomes minimum characteristic group. So, in grouping handling part 215,The similar degree evaluation of estimate of the group's etching characteristic based on each object etching characteristic and each characteristic group, and carry out will with this object erosionCarve object's position P corresponding to characteristic and be contained in any one the grouping processing (step in the characteristic group that sets group's quantityS14). By grouping processing, in each characteristic group, comprise at least 1 object's position P. In addition, in similar degree evaluation of estimateIn computing, number (sample size) and the value of obtaining multiple gap widths of poor d can at random determine, not necessarily must with testThe gap width G of 952 of the 1st graphical elements of pattern 93 is consistent. Between different from gap width G between the 1st graphical element 952The etch quantity of gap length degree is to obtain by various interpolation arithmetics.
Repeat control part 216 in the time confirming the termination condition of stating less than foot (step S15), make group's characteristic acquisition unit214 obtain group's etching characteristic (step S13) of each characteristic group again. Now, from processing and comprise by last groupingThe object etching characteristic of the object's position in each characteristic group is obtained group's etching characteristic of this characteristic group. Particularly,Various types of about etch plot, in the etch plot of the object's position comprising in each characteristic group, obtains and represents eachThe etch plot of the typical value such as mean value or median of the etch quantity in gap length degree is as the etch plot of group's etching characteristic.In addition, the typical value of the etch quantity in each gap width is as long as be near the value of central authorities that represents the distribution of etch quantity.
Group's etching characteristic also can be obtained by additive method. For example, also can obtain and comprise in each characteristic groupThe etch plot of each object's position, with this characteristic group in the described distance of etch plot of other object's positions of comprisingWith, and obtain this and become the etch plot of minimum etch plot as group's etching characteristic. So, the group of each characteristic groupThe etch plot of group etching characteristic also can be the etch plot of an object's position P itself, the etching song of this object's position PLine represents near the central authorities of distribution of the etch plot of the multiple object's position P that comprise in this characteristic group. In fact, due toThe etch plot of each object's position P comprises interference (improper value), so just make the etch plot smoothing of group's etching characteristicViewpoint, is preferably and obtains as described the etch plot that represents typical value (at the etching song of following representative etching characteristicSame in line).
In grouping handling part 215, with similarly described, obtain the group of each object etching characteristic and each characteristic groupThe similar degree evaluation of estimate of etching characteristic, and carry out each object's position P to be contained in arbitrary characteristic group based on similar degree evaluation of estimateNew grouping processing (object's position P redistributes) (step S14) in group. In other words, to institute in each characteristic groupThe object's position P comprising upgrades.
Repeating in control part 216, confirm the object's position P that comprises in the each characteristic group after upgrading whether with renewalThe object's position P comprising in this front characteristic group is consistent. Herein, the object's position comprising in the characteristic group after renewalP from upgrade before characteristic group in the object's position P that comprises different, confirm not meet termination condition (step S15) and weighMultiple described step S13, S14. If the object's position P comprising in the each characteristic group after the renewal of step S14 be about to moreThe object's position P comprising in this characteristic group before new is consistent, that is, object's position P does not move between characteristic group, trueRecognize the repetition that meets termination condition (step S15) and finish described step S13, S14. In the following description, will meet knotCharacteristic group when bundle condition is called " determining characteristic group ".
So, in characteristic group acquisition unit 213, repeat the obtaining and step of group's etching characteristic of step S13The grouping of S14 is processed until meet specific termination condition. Similarly object etching characteristic is corresponding thus, with mutuallyObject's position is contained in 1 and determines characteristic group, and multiple object's positions are divided into the setting group fewer than the plurality of object's positionThe decision characteristic group of quantity. In Fig. 9, be labeled in characterization and obtain the square with pattern 95 by changing by 3 kinds of situationsThe width of the parallel oblique line of shape, and represent that 3 determine the object's position P comprising in characteristic group. In addition, termination condition also canReach situation of the number of times of predetermining etc. for the number of repetition of described step S13, S14. In addition, characteristic group acquisition unit 213In the grouping of object's position P can utilize the method except described method (the k method of average) to carry out.
By group's etching characteristic of the multiple characteristic group obtaining at previous step S13 determine respectively into multiple decisions specialThe representative etching characteristic (step S16) of property group. In following processing, the representative etching characteristic of each decision characteristic group is doneFor the etching characteristic of the object's position P that comprises in this decision characteristic group is processed. In step S16, as long as each decision is specialThe representative etching characteristic of property group represents in fact the object etching of the multiple object's position P that comprise in this decision characteristic groupCharacteristic (representing the feature of multiple etching characteristics), also can utilize with step S13 diverse ways and obtain.
Then,, in describing device 1, the design data input of the predetermined pattern on substrate 9 will be formed on by etchingTo data correction portion 21, and be stored in design data storage part 211, thus with prepare (step S17).
Figure 10 is the figure that represents the represented layout of design data 83. In Figure 10, will be for drawing layout 83The profile of substrate 9 of predetermined essentially rectangular represent with thick 2 chain lines. Layout 83 comprises that being rectangular configuration (answersConnect) multiple partial patterns 84. Multiple partial patterns 84 are respectively the pattern elements of Construction designing pattern 83, and layout 83 isThe set of multiple pattern elements is pattern elements group. In Figure 10, partial pattern 84 is represented with rectangle.
The rectangle that represents each several part pattern 84 in Figure 10 is to surround the multiple figures that comprise in this partial pattern 84 to wantThe roughly rectangle of minimum that element is all. In the example of Figure 10, along with 2 orthogonal limits of the substrate 9 that utilizes 2 chain lines to representCorresponding 2 directions (in Figure 10, being shown x direction and y direction with the same earth's surface such as Fig. 5), arrange multiple partial graphs two-dimensionallyCase 84. These partial patterns 84 are identical each other patterns.
Because layout 83 is predetermined patterns of drawing on substrate 9, so can be interpreted as at layout 83In be also set with multiple object's position P. Similarly, can be interpreted as and on substrate 9, be set with for drawing each several part pattern 84Precalculated position (being designated hereinafter simply as " position of partial pattern 84 ").
In partition data correction portion 217, extract and represent respectively multiple partial patterns from the design data of layout 83Multiple partition datas (data block) of 84. In other words, the design data of layout 83 is divided into and represents respectively multiple portionsMultiple partition datas of sub-pattern 84. In addition, specific go out the position (example of the partial pattern 84 represented with respect to each partition dataAs the central authorities of partial pattern 84) and immediate object's position P. Then, the etching characteristic based on this object's position P, this is rightResemble the representative etching characteristic of the affiliated decision characteristic group of position P and revise this partition data, obtain thus and represent each several part figureThe complete partition data of correction (step S18) of case 84. In addition, in Fig. 9, will be using each object's position P as immediate rightThe region that resembles position utilizes the rectangle A1 of 2 chain lines centered by this object's position P to represent, in Figure 10 too.
In the correction of partition data, consider the position of the each several part pattern 84 on substrate 9, carry out according to etching characteristicThe etching of excessive (the exceeding aequum) of represented etch quantity. , with reference to the etching spy of the position of each several part pattern 84The representative etching characteristic of the decision characteristic group of property roughly equiv, so that each graphical element of the pattern on the substrate 9 after etchingBe formed as required live width or size mode, make each partition data graphical element live width chap or make figure wantElement becomes large correction.
Herein, if by being called cut zone for the region (part) of drawing on the substrate 9 of each several part pattern 84, in stepIn rapid S18, by partition data correction portion 217, first the design data of layout 83 be divided into and be set on substrate 9Multiple cut zone corresponding multiple partition datas respectively. And, to each partition data based on representative with this partition data pairThe etching characteristic (representing etching characteristic) of a decision characteristic group under the immediate object's position P of the cut zone of answeringAnd revise. So, the etching correction of each partition data is obtained and revised complete partition data by carrying out.
As mentioned above, in the example shown in Figure 10, what multiple partition datas of design data represented respectively cut apart pattern,Partial pattern 84 is identical. Therefore, can directly utilize and use the representative etching characteristic of each decision characteristic group and repairing of obtainingJust complete partition data is used as the object's position P that comprised in this decision characteristic group as its of immediate object's positionThe partition data of his cut zone. Thus, the execution number of times of the etching correction to partition data tails off, and the short time complete withMultiple cut zone are multiple obtain (etching corrections) of having revised complete partition data of correspondence respectively. In Figure 10, by makingThe width of parallel oblique line that is labeled in the rectangle of expressed portion sub-pattern 84 is consistent, and performance utilizes identical complete cutting apart of correctionThe partial pattern 84 of data.
In partition data correction portion 217, by gather described multiple revised complete partition data produce described inRevise complete data. This has been revised complete data and has been sent to data transaction portion 22 from data correction portion 21. In data transaction portion 22In, using becomeing famous as the complete data transaction of correction of vector data, volumes certificate is describing data (step S19).
What this describing data was sent to exposure device 3 from data transaction portion 22 draws controller 31. In exposure device 3,By the describing data based on from data processing equipment 2 and utilize the modulating sections of drawing controller 31 and control light outgoing portion 33332 and sweep mechanism 35 and carry out draw (the step S20) to substrate 9. Show by the substrate 9 to having been drawnThe various processing such as shadow, etching, and on substrate 9, be formed with multiple independently Wiring patterns of expressed portion sub-pattern 84 respectively.
In fact, as multiple substrates 9 of drawing object, utilize identical correction complete to the layout 83 using identicalComplete data are sequentially drawn. In addition, when change layout, using new layout when drawing object, one side is straightConnect the representative etching characteristic that utilizes multiple decision characteristic group, one side is used this new layout to carry out step S17, S18, andProduce and revised complete data. Then, revised complete data and carried out drawing substrate 9 based on this.
Suppose the processing of following comparative example herein: to using each object's position P as immediate object's position pointCutting the object etching characteristic of partition data corresponding to region (part) based on this object's position P revises. Due to multiple objectsMultiple object etching characteristics of position P are conventionally different, so in the processing of comparative example, must obtain all object's positionsThe complete partition data of correction of the amount of the number of P. Revise that obtaining of complete partition data need to be to a certain degree due to 1Time, so if obtain the complete partition data of correction of the amount of the number of all object's position P, be difficult to the good ground of efficiency in factExecute and utilize drawing of describing device 1. In addition, although also consider the number of the object's position P on test base 9a to limit in advanceFor several (reduce to measure and count), but in this case, the scope using each object's position P as immediate object's position becomesExtensively, cannot carry out high-precision etching correction.
With respect to this, in the characteristic group acquisition unit 213 of data correction portion 21, by losing with mutually similar objectCarve object's position P corresponding to characteristic and be contained in 1 characteristic group, and multiple object's position P are divided into the decision spy of specific quantityProperty group. , multiple object's position P are divided into groups based on object etching characteristic (based on the shape of etch plot). Then,By partition data correction portion 217, to each partition data of design data based on the representative cut section corresponding with this partition dataUnder the immediate object's position P in territory one determines the etching characteristic of characteristic group and revises. Thus, can realizeEfficiency is carried out high-precision etching correction goodly. In addition, in the describing device 1 that this data correction portion 21 is set, can be by manyIndividual partial pattern 84 accurately and (by the efficient activity of etching correction) and draw on substrate 9 in the short time.
In addition, characteristic group acquisition unit 213 comprises: group's characteristic acquisition unit 214, group's etching of obtaining each characteristic groupCharacteristic; And grouping handling part 215, the similar degree of the group's etching characteristic based on each object etching characteristic and each characteristic group is commentedBe worth and carry out grouping processing. And, repeat to utilize group's characteristic acquisition unit 214 the obtaining of group's etching characteristic,And utilize the grouping of grouping handling part 215 to process until meet specified conditions. In addition, during in repetition, these are processed,The object etching characteristic that is included in the object's position P each characteristic group from processing by last grouping is obtained this characteristic groupGroup's etching characteristic of group. Thus, can suitably divide into groups to multiple object's position P.
Next, the processing of the object etching characteristic acquisition unit 218 of utilizing Fig. 3 is described. Utilize object etching spyThe processing of property acquisition unit 218 is processing of carrying out in the step S11 in Fig. 4. In the explanation of this processing example, by Fig. 5Object's position P is called " reference position ", and the object etching characteristic corresponding with object's position P is called to " benchmark etching characteristic ".
Figure 11 is the top view that represents test base 9a, and the multiple characteristics on test base 9a are obtained to the position with pattern 95Put (reference position) label symbol P0. In addition, in Figure 11, the region corresponding with multiple partial patterns 84 also utilizes 2 chain linesRectangle represent. The multiple benchmark etching characteristics corresponding with multiple reference position P0 are (to obtain object etching spy with described processingThe processing of property) similarly obtain.
Then, in object etching characteristic acquisition unit 218, the position of each several part pattern 84 is made as to object's position, and baseIn multiple benchmark etching characteristics of multiple reference position P0 and obtain multiple object etching characteristic (steps of multiple object's positionsS11). Object etching characteristic is each position with multiple reference position P0 based on object's position (position of each several part pattern 84)Relation, and the multiple benchmark etching characteristics corresponding with multiple reference position P0 are weighted, and based on after being weightedMultiple benchmark etching characteristics and obtaining. In addition, to the weighting of multiple benchmark etching characteristics be for example by make based on each benchmarkThe weighted factor of the distance between reference position P0 and object's position that etching characteristic is corresponding and this benchmark etching characteristic multiply each other andCarry out.
Specifically, by using the bilinear interpolation (bilinear of object's position and multiple reference position P0Interpolation), one side is carried out the weighting of the etch plot to described multiple benchmark etching characteristics, and one side is obtained object erosionCarve the etch plot of characteristic. For example, if focus on the object's position of label symbol P1 in Figure 11, pass through based on this object positionPut P1, with surround in 4 reference position P0 (forming 4 reference position P0 of minimum rectangle) of this object's position P1 (+y)The distance of the x direction between 2 reference position P0 of side, to (+y) etch plot of 2 reference position P0 of side is carried out linearityInterpolation, and obtain the 1st interpolation etch plot. Particularly, if by a reference position P0 in described 2 reference position P0And the distance of the x direction between object's position P1 is made as d1, and by the x side between another reference position P0 and object's position P1To distance be made as d2, (d2/ (d1+d2)) is made as weighted factor and this reference position P0 etch plot (Etch quantity) multiply each other. In addition, (d1/ (d1+d2)) is made as to the etch plot phase of another reference position of weighted factor and this P0Take advantage of. Then, by the multiplication result to 2 articles of etch plot is added and obtains the 1st interpolation etch plot.
Similarly, by based on described object's position P1, with described 4 reference position P0 in (y) 2 of side benchmarkThe distance of the x direction between the P0 of position, to (y) etch plot of 2 of side reference position P0 is carried out linear interpolation and obtained2 interpolation etch plot. Particularly, if by reference position P0 in described 2 reference position P0 and object's position P1Between the distance of x direction be made as d3, and the distance of the x direction between another reference position P0 and object's position P1 is made asD4, is made as weighted factor by (d4/ (d3+d4)) and multiplies each other with the etch plot of this reference position P0. In addition, by (d3/(d3+d4) etch plot that) is made as another reference position of weighted factor and this P0 multiplies each other. Then, by will be to 2 etchingsThe multiplication result of curve is added and obtains the 2nd interpolation etch plot.
Then, by based on object's position P1, with described 4 reference position P0 in (x) side or (+x) 2 bases of sideLevel is put the distance of the y direction between P0, and the 1st interpolation etch plot and the 2nd interpolation etch plot are carried out linear interpolation and obtainedGet etch plot. Particularly, if by (+y) reference position P0 and the object's position P1 of side in described 2 reference position P0Between the distance of y direction be made as d5, and by (distance of the y direction between reference position P0 and object's position P1 y) is made asD6, is made as weighted factor by (d6/ (d5+d6)) and multiplies each other with the 1st interpolation etch plot. In addition, (d5/ (d5+d6)) establishedFor weighted factor comes to multiply each other with the 2nd interpolation etch plot. Then, by the multiplication result to 2 interpolation etch plot is added(i.e. many etch plot based on carrying out described weighting) and obtain etch plot.
In object etching characteristic acquisition unit 218, about the kind of all etch plot that comprise in benchmark etching characteristicClass, with similarly described, obtains object etching characteristic by obtaining etch plot. Described processing is for all object's positionsCarry out (positions of all partial patterns 84), and obtain the multiple object etching characteristics corresponding with multiple object's positions. In addition join,Put near the outer rim of substrate 9 (test base 9a) and do not configure around the object erosion of the object's position of 4 reference position P0Carving characteristic and be near the computing of the benchmark etching characteristic by utilizing this object's position 1 or several reference position P0 asksGo out, or as the benchmark etching characteristic of immediate reference position P0 and obtain.
When obtaining multiple object etching characteristics when preparing, with reference to the illustrated described processing of Fig. 4 similarly, characteristicGroup's acquisition unit 213 is contained in 1 characteristic group by object's position that will be corresponding with mutually similar object etching characteristic, andMultiple object's positions are divided into the decision characteristic group (step S12～S16) of specific quantity. Then, utilize partition data correctionPortion 217, the immediate object's position of the cut zone to each partition data of design data based on corresponding with this partition data,Represent the representative etching characteristic of the decision characteristic group under the object's position of position of this cut zone and revise (stepRapid S17～S18), and use carry out based on revising the describing data of complete data to the drawing of substrate 9 (step S19,S20)。
As mentioned above, utilizing in the processing of object etching characteristic acquisition unit 218, for the multiple benchmark position on substrate 9The each person who puts and obtain in advance benchmark etching characteristic. Then, for each person of multiple object's positions, based on each object's position and manyThe position relationship of individual reference position and multiple benchmark etching characteristics of multiple reference positions are weighted, and based on addingMultiple benchmark etching characteristics after power and obtain the object etching characteristic of this object's position. Thus, be convenient to set on substrate 9Have in the situation of multiple object's positions, also can simultaneously consider poor because of the etching characteristic due to the difference of the position on substrate 9Different, one side is easily obtained the suitable object etching characteristic of each object's position. If to corresponding with each cut zone pointIn the situation of cutting the object etching characteristic of data based on this cut zone and revise, need to obtain multiple revised completePartition data, but in this processing example, by based on object etching characteristic, multiple object's positions being divided into groups, and with described feelingsCondition is compared, and can efficiency carry out capitally etching correction. In addition, the object etching characteristic of each object's position can be described by removingThe whole bag of tricks beyond bilinear interpolation is obtained.
In described processing example, utilizing in the drawing of describing device 1, with complete design number within the time that can allowAccording to the mode of correction, in the step S12 in Fig. 4, input and set group's quantity by operator, but also can pass through additive methodDetermine to set group's quantity. Next, the processing that utilizes group's quantity determination section 219 decisions of Fig. 3 to set group's quantity is enteredRow explanation.
In the time determining to set group's quantity, by the control of group's quantity determination section 219, group's quantity is made as and is facedTime setting group quantity (be the number less than the sum of object's position, be designated hereinafter simply as " interim group quantity "), carry out withThe processing that described step S13～S15 is same. In addition, (determine characteristic for the characteristic group of this divided into groups interim group quantityGroup) each person obtain and represent etching characteristic. Then, obtain represent the representative etching characteristic of each characteristic group, with belong to this spyProperty group all object's positions object etching characteristic diversity factor value (herein, both diversity factoies higher value moreGreatly).
Particularly, various types of about etch plot, the etch plot of the representative etching characteristic of each characteristic group, with belong toPoor (absolute value) of the etch quantity between the etch plot of the object etching characteristic of each object's position of this characteristic group beEach person of multiple gap widths of predetermining obtains. Obtain the plurality of gap width this difference and as these 2 etchingsDistance between curve, and obtain all kinds of etch plot this distance and as described represent etching characteristic with described inCharacteristic spacing between object etching characteristic. And then, obtain the characteristic spacing of all object's positions that belong to this characteristic groupFrom and as represent the representative etching characteristic of this characteristic group, with the object erosion of all object's positions that belongs to this characteristic groupCarve the value of the diversity factor of characteristic. Then, obtain represent this diversity factor value all characteristics group and as judge evaluation of estimate.
In group's quantity determination section 219, obtain judgement evaluation of estimate for each person of multiple interim groups quantity. Then,To judge that evaluation of estimate becomes below specific threshold value, judges that evaluation of estimate restrains the minimum interim group quantity decision of certain degreeFor setting group's quantity. Utilizing in the described processing of group's quantity determination section 219, determine the step of the Fig. 4 that sets group's quantityThe pack processing of rapid S12 contains the processing of step S13～S15, in the situation that multiple interim groups quantity is changed with ascending order,Complete characteristic group (the decision characteristic group of multiple object's positions to this setting group quantity with determining setting group quantity simultaneouslyGroup) grouping.
As mentioned above, in group's quantity determination section 219, about each person of multiple interim groups quantity, by making characteristicGroup's acquisition unit 213 is carried out the grouping of object's position, and obtain represent to represent the etching characteristic of each characteristic group, with belong to this spyProperty group all object's positions object etching characteristic diversity factor value all characteristics group and as judge evaluateValue. Then, will judge that the minimum interim group quantity that evaluation of estimate becomes below specific threshold value determines as setting group's quantity.Thus, realize and easily determine preferred group quantity.
In described processing example, completing object's position after determining the grouping of characteristic group, determine to represent etching spyProperty, but also can predetermine and represent etching characteristic. For example,, in the each decision characteristic group to determining by described processing exampleThe object's position comprising upgrades while being used as each calibration during fixing etc. in specific sequential, carries out according to Fig. 4Processing.
Particularly, with described embodiment similarly, by draw test pattern 93 on test base 9a, and obtainThe object etching characteristic (step S11) of multiple object's positions. Then, by the decision characteristic group having obtained (hereinafter referred to as " moreDecision characteristic group before new ") group's quantity be made as and set group's quantity (step S12) and carry out step S13, S14. ThisTime, in step S13, by associated with characteristic group foundation the representative etching characteristic of the each decision characteristic group before upgrading andUtilize as group's etching characteristic. In addition, will not repeat step S13, S14 (, omitting step S15) and pass through stepA grouping of S14 is processed the characteristic group obtaining and is processed as the decision characteristic group after upgrading.
In step S16, the decision characteristic of the representative etching characteristic of the decision characteristic group before upgrading after upgradingThe representative etching characteristic of group and directly utilize. In addition, in this processing example, multiple partition datas of design data represent respectivelyMultiple partial patterns 84 (cutting apart pattern) also identical. And then, the representative etching characteristic of the decision characteristic group based on before upgradingThe complete partition data of correction (use this to represent etching characteristic and obtain the complete partition data of correction) exist. CauseThis, in step S17, S18, for the object's position being comprised in the each decision characteristic group using after upgrading as immediateThe cut zone of object's position, directly utilizes the decision characteristic before the renewal based on corresponding with decision characteristic group after this renewalThe complete partition data of correction of the representative etching characteristic of group. Thus, can complete respectively and cut apart with multiple in the utmost point short timeMultiple obtain (etching corrections) of having revised complete partition data that region is corresponding. To gather multiple complete partition datas of having revisedAnd the new complete data transaction of correction become describing data, and utilize to (step S19, S20) in the drawing of substrate 9.
In addition, in the situation that identical layout being drawn on substrate 9 in multiple describing devices 1, also can baseObtain in advance multiple complete partition datas of having revised in specific multiple etching characteristics, and by each person of the plurality of etching characteristicRepresentative etching characteristic as the decision characteristic group before upgrading is processed, and in each describing device 1, carries out according to described in Fig. 4Process. In this case, can simultaneously consider the difference of the distribution of the etching characteristic in multiple describing devices 1, the one side efficiency utmost pointCarry out etching correction goodly.
And then, also can in the layout that is arranged with multiple partial patterns, comprise multiple characteristics and obtain and use pattern. At thisIn situation, based on obtaining multiple object etching characteristics by multiple mensuration patterns of drawing and etching is formed on substrate 9, andCarry out object's position to determine characteristic group grouping processing, determine characteristic group representative etching characteristic obtain and profitRevise obtaining of complete data with what this represented etching characteristic. In addition, whenever having revised complete data and at substrate 9 based on thisWhen upper formation pattern, measure the multiple mensuration patterns on this substrate 9 and obtain the object etching characteristic of multiple object's positions. SoAfter, carry out grouping processing using the representative etching characteristic of described decision characteristic group as group's etching characteristic, in each characteristicThe object's position comprising in group with corresponding to the decision characteristic group (the decision characteristic group before renewal) of this characteristic groupIn different situations, this characteristic group is made as to the decision characteristic group after renewal and produces the new complete data of correction. ByThis, the variation in generation by the distribution of the caused etching characteristic of variation of various conditions, can promptly obtainComplete data (same in following testing fixture 1a) are preferably revised.
Next, the testing fixture of the 2nd embodiment of the present invention is described. Figure 12 represents testing fixture 1aThe block diagram of function. Testing fixture 1a checks the dress that is formed on the pattern on substrate 9 by drawing etching after layoutPut. In testing fixture 1a, relatively the pattern on substrate 9, with the following revised design data of etching. Testing fixture 1a isThe formation that become general computer system same with the data processing equipment 2 shown in Fig. 2.
Testing fixture 1a comprises the 21a of data correction portion, real image storage part 25 and defects detection portion 26. Data correctionThe 21a of portion be with the data correction portion 21 shown in Fig. 3 similarly comprise design data storage part 211, etching characteristic storage part 212,Characteristic group acquisition unit 213 and partition data correction portion 217. 25 storages of real image storage part are formed on the pattern on substrate 9View data be check image data. The defect that is formed on this pattern on substrate 9 detects in defects detection portion 26. Checking dressPut in 1a, object etching characteristic acquisition unit 218 and the group's quantity determination section 219 of Fig. 3 also can be set.
Next, one side is with reference to Figure 13, and a flow process of facing the inspection that utilizes testing fixture 1a describes. Utilizing inspectionLook in the inspection of device 1a, carry out the processing same with step S11～S18 of Fig. 4. Particularly, based on being formed on test baseMensuration pattern on plate 9a and obtain the object etching characteristic of multiple object's positions, and be stored in etching characteristic storage part 212With prepare (step S11). Then, determine to set group's quantity (step S12). In characteristic group acquisition unit 213, walkThe processing of rapid S13～S15. , repeat each characteristic group group's etching characteristic obtain and based on each object's positionThe grouping of the similar degree evaluation of estimate between group's etching characteristic of object etching characteristic and each characteristic group is processed until meetTill specific termination condition, and determine characteristic group. In addition, determine the representative etching characteristic (step of characteristic groupRapid S16).
Then, the design data of layout 83 is stored in design data storage part 211 with the (step of preparingS17). In partition data correction portion 217, extract and represent respectively multiple partial patterns 84 from the design data of layout 83Multiple partition datas of (with reference to Figure 10). In other words, the design data of layout 83 is divided into respectively and is cut apart with multipleMultiple partition datas that region is corresponding. And, based on the immediate object of the representative cut zone corresponding with each partition dataThe etching characteristic of a decision characteristic group under position, utilizes partition data correction portion 217 to revise these partition datas and (entersRow etching correction), and obtain the complete partition data of correction (step S18) of each several part pattern 84.
Herein, the content of the etching correction of testing fixture 1a is different with the etching correction of describing device 1. Particularly, examineConsider in the position of the each several part pattern 84 of substrate 9, in the time of actual etching, carry out the mistake of the etch quantity represented according to etching characteristicDegree etching. That is, so that the graphical element comprising in each several part pattern 84 becomes live width or big or small mode after actual etching,The correction that makes the live width of the graphical element of each partition data attenuate or graphical element is diminished. In other words, to respectively cutting apartData are carried out and the diametical correction of repairing of in the described step S18 of describing device 1, each partition data being carried out.
In partition data correction portion 217, corresponding with multiple partial patterns 84 multiplely revise complete point by gatheringCut data, and the design data of the layout 83 of generation through revising complete data are revised. This revised complete data fromData correction portion 21 is sent to defects detection portion 26.
Then, obtain the view data of the etched pattern on substrate 9, and this view data is made as to check image data andBe stored in real image storage part 25 with prepare (step S21). Herein, the etched pattern on substrate 9 is following pattern, itsBy the design data of the layout 83 based on before revising, the pattern of drawing the resist film on substrate 9 to be developedForm resist pattern, and utilize this resist pattern to implement etching and be formed on substrate 9. Step S21 can with step S11～S18 carries out simultaneously, also can before step S11～S18, carry out. This check image data can be except testing fixture 1aDevice obtains, and also can obtain at testing fixture 1a. In in the situation that testing fixture 1a obtains check image data, checking dressPut 1a the image pickup part that obtains check image data is set. In addition, in described step S11, in obtaining mensuration at testing fixture 1aIn the situation of the image of pattern 96, be preferably also and carry out obtaining of check image data at testing fixture 1a.
Check image data are sent to defects detection portion 26 from real image storage part 25. In defects detection portion 26, logicalCross these check image data relatively, with the complete data of correction that send from the 21a of data correction portion (by data correction portion21a carries out the design data of etching correction), and detect the defect (step S22) that is formed on the etched pattern on substrate 9. AsThe above, this has revised complete data is so that the graphical element of each several part pattern 84 becomes live width or the size after actual etchingMode revise and obtain, therefore in defects detection portion 26, detect check image data and revised the poor of complete dataThe different defect as the etched pattern on substrate 9.
As described above, in the 21a of data correction portion, by by with mutually similarly object etching characteristic is correspondingObject's position is contained in 1 characteristic group, and multiple object's positions is divided into the decision characteristic group of specific quantity. Then, logicalOver-segmentation data correction portion 217, to each partition data of design data based on the representative cut zone corresponding with this partition dataImmediate object's position under one determine characteristic group etching characteristic and revise. Thus, can efficiency goodGround carries out high-precision etching correction. In addition, in testing fixture 1a, can suppress hypothesis audit by comparison view data with notCarry out detected wrong report (detecting because of the caused Artifact of over etching) in the situation of design data of etching correction,And carry out accurately the inspection of the etched pattern on substrate 9. And then, can be in the short time by the efficient activity of etching correctionCarry out the inspection of pattern.
In described describing device 1 and testing fixture 1a, can carry out various changes.
The order of the processing in Fig. 4 and Figure 13 can suitably change. For example, step S17 and step S11～S16 can and advanceOK, step S17 also can carry out before step S11～S16.
Configuration and the quantity of multiple partial patterns 84 (the multiple parts on substrate 9) of layout 83 are not limited to figureSituation shown in 10, can suitably change. Multiple characteristics on test base 9a are obtained and are not also limit by configuration and the quantity of pattern 95Due to the situation shown in Fig. 5, can suitably change. Characteristic obtain with pattern 95 not necessarily must be with the arranged with interval of fixing. For example,Can on substrate 9, dredge ground configuration feature in the higher region of the yield of part and obtain with pattern 95, low at the yield of partRegion more thickly configuration feature obtains with pattern 95.
In layout 83, also can comprise multiple partial patterns 84 of an identical each other kind and identical each otherMultiple partial patterns 84 of another kind. In this case, in identical multiple partial patterns 84, also can be to connecing mostNear object's position belongs to the partial pattern 84 of identical characteristic group, utilizes the identical complete partition data of correction and efficiencyCarry out high-precision etching correction goodly.
In partition data correction portion 217, also can only do at the object's position being comprised in determining characteristic group withFor complete partial pattern has been revised in 1 subregion configuration in 2 of immediate object's position above subregions,Other subregions only have the information of the purport that disposes the partial pattern identical with being configured in this 1 subregion person. ?In this situation, while having revised the conversion of complete data in data transaction portion 22, by be configured in described 1 subregionRevise register data configuration that the register data of complete partial pattern are identical in these other subregions.
Describing device 1 can be used on the various objects except substrate 9 and draw pattern. Testing fixture 1a also can profitFor be formed on the inspection of the pattern on the various objects except substrate 9 by etching. Data correction portion 21,21a canAs from independently data correction device and utilizing of describing device 1 and testing fixture 1a. This data correction device can be used in logicalCross etching and be formed on the correction of the design data of the pattern on the various objects except substrate 9.
Described embodiment and respectively change routine formation only otherwise conflicting, can be appropriately combined.
Described invention in detail, but described being illustrated as illustrates and is not limited person. Therefore, only can say otherwise take offCan there be various deformation or form from scope of the present invention.
[explanation of symbol]
1 describing device
1a testing fixture
2 data processing equipments
9 substrates
9a test base
21,21a data correction portion
25 real image storage parts
26 defects detection portions
35 sweep mechanisms
80 programs
83 layouts
84 partial patterns
211 design data storage parts
212 etching characteristic storage parts
213 characteristic group acquisition units
214 group's characteristic acquisition units
215 grouping handling parts
216 repeat control part
217 partition data correction portions
218 object etching characteristic acquisition units
219 group's quantity determination sections
331 light sources
332 modulating sections
E1, E2 etch plot
P, P1 object's position
P0 reference position
S11～S22 step
Claims (17)
1. a data correction device, its correction is formed on the design data of the pattern on object by etching, and comprises:
Design data storage part, storage is formed on the design data of the pattern on object by etching;
Etching characteristic storage part, loses each person's of the multiple object's positions on described object etching characteristic as objectCarve characteristic, and storage is for multiple object etching characteristics of described multiple object's positions;
Characteristic group acquisition unit, by being contained in 1 characteristic with the object's position that similarly object etching characteristic is corresponding mutuallyGroup, and described multiple object's positions are divided into the characteristic group of the specific quantity fewer than described multiple object's positions; And
Partition data correction portion, is divided into described design data with to be set in multiple cut zone on described object correspondingMultiple partition datas, and to each partition data immediate based on the representative cut zone corresponding with described each partition dataThe etching characteristic of a characteristic group under object's position and revising.
2. data correction device according to claim 1, wherein
Described characteristic group acquisition unit comprises:
Group's characteristic acquisition unit, obtains with each characteristic group and sets up associated etching characteristic as group's etching characteristic; And
Grouping handling part, based on the class of described group etching characteristic that represents each object etching characteristic and described each characteristic groupLike the value of degree, and carry out the object's position corresponding with described each object etching characteristic to be contained in the characteristic group of described specific quantityThe grouping processing of any one in group.
3. data correction device according to claim 2, wherein
Described characteristic group acquisition unit also comprises repetition control part, and this repetition control part makes to utilize described group characteristic acquisition unitThe obtaining and utilize the described grouping processing of described grouping handling part to repeat until meet of described group etching characteristicTill specified conditions,
Described group characteristic acquisition unit is from processing the object being included in described each characteristic group by last described groupingThe object etching characteristic of position, obtains the described group etching characteristic of described each characteristic group.
4. data correction device according to claim 1, wherein
It is identical that what described multiple partition datas of described design data represented respectively cut apart pattern.
5. data correction device according to claim 1, it also comprises object etching characteristic acquisition unit, this object etching spyProperty acquisition unit is to obtain in advance benchmark etching characteristic for each person of the multiple reference positions on described object, and for describedEach person of multiple object's positions, the position relationship based on each object's position and described multiple reference positions and to described multiple benchmarkMultiple benchmark etching characteristics of position are weighted, and described multiple benchmark etching characteristics based on after being weighted and obtainingThe described object etching characteristic of described each object's position.
6. data correction device according to claim 1, it also comprises group's quantity determination section, this group's quantity determination sectionBe for each person of multiple interim groups quantity, described characteristic group acquisition unit to be divided into groups, obtain and represent to represent each characteristic groupThe etching characteristic of group, with the institute of value of diversity factor of object etching characteristic of all object's positions that belongs to described each characteristic groupHave characteristic group and as evaluation of estimate, and described evaluation of estimate is become to minimum interim group quantity below specific threshold certainlyBe decided to be described specific quantity.
7. a describing device, it draws pattern on object, and comprises:
According to the data correction device described in any one in claim 1 to 6;
Light source;
Modulating sections, based on modulating the light from described light source by the design data of described data correction device correction;And
Sweep mechanism, the light that scanning has been modulated by described modulating sections on object.
8. a testing fixture, its inspection is formed on the pattern on object by etching, and comprises:
According to the data correction device described in any one in claim 1 to 6;
Real image storage part, the view data that storage is formed on the pattern on object by etching is check image numberAccording to; And
Defects detection portion, by entering the design data of utilizing the correction of described data correction device and described check image dataRow compares, and detects the defect that is formed on the described pattern on described object.
9. a data correcting method, its correction is formed on the design data of the pattern on object by etching, and comprisesFollowing steps:
A) preparation is formed on the design data of the pattern on object by etching;
B) using each person's of the multiple object's positions on described object etching characteristic as object etching characteristic, and prepareFor multiple object etching characteristics of described multiple object's positions;
C) by being contained in 1 characteristic group with the object's position that similarly object etching characteristic is corresponding mutually, and described in inciting somebody to actionMultiple object's positions are divided into the characteristic group of the specific quantity fewer than described multiple object's positions; And
D) described design data is divided into the multiple Segmentation Numbers corresponding with being set in multiple cut zone on described objectAccording to, and to each partition data under the immediate object's position based on the representative cut zone corresponding with described each partition dataA characteristic group etching characteristic and revise.
10. data correcting method according to claim 9, wherein
Described c) step comprises the steps:
C1) obtain with each characteristic group and set up associated etching characteristic as group's etching characteristic; And
C2) value of similar degree of described group etching characteristic based on representing each object etching characteristic and described each characteristic group,And carry out the object's position corresponding with described each object etching characteristic to be contained in appointing in the characteristic group of described specific quantityThe grouping processing of one.
11. data correcting methods according to claim 10, wherein
Described c) step also comprises the steps: to repeat described c1) the obtaining and institute of the described group etching characteristic of stepState c2) the described grouping of step processes until meet specified conditions, and
At described c1) in step, from process the object position being included in described each characteristic group by last described groupingThe object etching characteristic of putting, obtains the described group etching characteristic of described each characteristic group.
12. data correcting methods according to claim 9, wherein
It is identical that what described multiple partition datas of described design data represented respectively cut apart pattern.
13. data correcting methods according to claim 9, wherein
For each person of the multiple reference positions on described object and obtain in advance benchmark etching characteristic, and
In described b) step, for each person of described multiple object's positions, based on each object's position and described multiple benchmark positionThe position relationship of putting and multiple benchmark etching characteristics of described multiple reference positions are weighted, and based on after being weightedDescribed multiple benchmark etching characteristics and obtain the described object etching characteristic of described each object's position.
14. data correcting methods according to claim 9, wherein
Carry out described c) step and divide into groups for each person of multiple interim groups quantity, obtaining and represent to represent each characteristic groupEtching characteristic, with value all of diversity factor of object etching characteristic of all object's positions that belong to described each characteristic groupCharacteristic be group and as evaluation of estimate, and the minimum interim group quantity that described evaluation of estimate is become below specific threshold determinesFor described specific quantity.
15. 1 kinds of discharge drawing methods, it draws pattern on object, and comprises the steps:
By revising design data according to the data correcting method described in any one in claim 9 to 14; And
Described design data based on having revised and scan modulated light on object.
16. 1 kinds of inspection methods, its inspection is formed on the pattern on object by etching, and comprises the steps:
By revising design data according to the data correcting method described in any one in claim 9 to 14; And
By the described design data of more having revised and the view data that is formed on the pattern on object by etching beCheck image data, and detect the defect that is formed on the described pattern on described object.
17. 1 kinds of recording mediums, its record is revised the design data that is formed on the pattern on object by etchingProgram, and the execution that utilizes computer of described program is to make described computer carry out following steps:
A) preparation is formed on the design data of the pattern on object by etching;
B) using each person's of the multiple object's positions on described object etching characteristic as object etching characteristic, and prepareFor multiple object etching characteristics of described multiple object's positions;
C) by being contained in 1 characteristic group with the object's position that similarly object etching characteristic is corresponding mutually, and described in inciting somebody to actionMultiple object's positions are divided into the characteristic group of the specific quantity fewer than described multiple object's positions; And
D) described design data is divided into the multiple Segmentation Numbers corresponding with being set in multiple cut zone on described objectAccording to, and to each partition data under the immediate object's position based on the representative cut zone corresponding with described each partition dataA characteristic group etching characteristic and revise.
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| JP2014-229597 | 2014-11-12 | ||
| JP2014229597A JP6342304B2 (en) | 2014-11-12 | 2014-11-12 | Data correction apparatus, drawing apparatus, inspection apparatus, data correction method, drawing method, inspection method, and program |
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| JP (1) | JP6342304B2 (en) |
| KR (1) | KR101729862B1 (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108416747A (en) * | 2018-02-27 | 2018-08-17 | 平安科技（深圳）有限公司 | Element position modification method, device, computer equipment and storage medium |
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| US10515178B2 (en) | 2017-08-30 | 2019-12-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Merged pillar structures and method of generating layout diagram of same |
| DE102018107077A1 (en) | 2017-08-30 | 2019-02-28 | Taiwan Semiconductor Manufacturing Co., Ltd. | Merged column structures and methods of generating layout diagrams therefrom |
| JP7072844B2 (en) * | 2018-03-30 | 2022-05-23 | 東レエンジニアリング先端半導体Ｍｉテクノロジー株式会社 | A method and device for generating a correction line showing the relationship between the amount of deviation between the edge of the wafer pattern and the edge of the reference pattern and the space width of the reference pattern, and a computer-readable recording medium. |
| JP7521988B2 (en) * | 2020-09-23 | 2024-07-24 | 株式会社Ｓｃｒｅｅｎホールディングス | Substrate position detection method, drawing method, substrate position detection device, and drawing device |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11154635A (en) * | 1997-11-20 | 1999-06-08 | Nec Corp | Electronic line direct protting method and device therefor |
| CN100386854C (en) * | 2002-05-28 | 2008-05-07 | 新光电气工业株式会社 | Wiring forming system and wiring forming method for forming wiring on wiring board |
| JP2008134512A (en) * | 2006-11-29 | 2008-06-12 | Toppan Printing Co Ltd | Method for correcting pattern data, photomask, and circuit board |
| JP2013012562A (en) * | 2011-06-29 | 2013-01-17 | Zuken Inc | Device and method for creating etching pattern, program, and computer readable recording medium |
| CN103454286A (en) * | 2012-05-31 | 2013-12-18 | 大日本网屏制造株式会社 | Apparatus for and method of inspecting substrate |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4158384B2 (en) * | 2001-07-19 | 2008-10-01 | 株式会社日立製作所 | Semiconductor device manufacturing process monitoring method and system |
| KR20050014767A (en) * | 2003-07-31 | 2005-02-07 | 후지 샤신 필름 가부시기가이샤 | Pattern production system, exposure apparatus and exposure method |
| JP4515184B2 (en) * | 2003-07-31 | 2010-07-28 | 富士フイルム株式会社 | Pattern manufacturing system, exposure apparatus, and exposure method |
| JP5254068B2 (en) * | 2009-02-05 | 2013-08-07 | 株式会社エスケーエレクトロニクス | Photomask correction method for color filters |
| JP5398318B2 (en) * | 2009-03-24 | 2014-01-29 | 株式会社東芝 | Exposure apparatus and method for manufacturing electronic device |
| JP2011233744A (en) * | 2010-04-28 | 2011-11-17 | Toshiba Corp | Exposure method and method of manufacturing semiconductor device |
-
2014
- 2014-11-12 JP JP2014229597A patent/JP6342304B2/en active Active
-
2015
- 2015-11-09 KR KR1020150156418A patent/KR101729862B1/en active IP Right Grant
- 2015-11-09 TW TW104136892A patent/TWI620032B/en active
- 2015-11-11 CN CN201510765872.1A patent/CN105590877B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11154635A (en) * | 1997-11-20 | 1999-06-08 | Nec Corp | Electronic line direct protting method and device therefor |
| CN100386854C (en) * | 2002-05-28 | 2008-05-07 | 新光电气工业株式会社 | Wiring forming system and wiring forming method for forming wiring on wiring board |
| JP2008134512A (en) * | 2006-11-29 | 2008-06-12 | Toppan Printing Co Ltd | Method for correcting pattern data, photomask, and circuit board |
| JP2013012562A (en) * | 2011-06-29 | 2013-01-17 | Zuken Inc | Device and method for creating etching pattern, program, and computer readable recording medium |
| CN103454286A (en) * | 2012-05-31 | 2013-12-18 | 大日本网屏制造株式会社 | Apparatus for and method of inspecting substrate |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108416747A (en) * | 2018-02-27 | 2018-08-17 | 平安科技（深圳）有限公司 | Element position modification method, device, computer equipment and storage medium |
| WO2019165676A1 (en) * | 2018-02-27 | 2019-09-06 | 平安科技（深圳）有限公司 | Element position correcting method, device, computer device, and storage medium |
| CN108416747B (en) * | 2018-02-27 | 2020-07-10 | 平安科技（深圳）有限公司 | Element position correction method, element position correction device, computer equipment and storage medium |
Also Published As
| Publication number | Publication date |
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| JP6342304B2 (en) | 2018-06-13 |
| JP2016095332A (en) | 2016-05-26 |
| KR101729862B1 (en) | 2017-04-24 |
| TWI620032B (en) | 2018-04-01 |
| CN105590877B (en) | 2018-05-25 |
| KR20160056801A (en) | 2016-05-20 |
| TW201632998A (en) | 2016-09-16 |
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