JPH11150198A - 不揮発性メモリ及び電子機器 - Google Patents

不揮発性メモリ及び電子機器

Info

Publication number
JPH11150198A
JPH11150198A JP9333453A JP33345397A JPH11150198A JP H11150198 A JPH11150198 A JP H11150198A JP 9333453 A JP9333453 A JP 9333453A JP 33345397 A JP33345397 A JP 33345397A JP H11150198 A JPH11150198 A JP H11150198A
Authority
JP
Japan
Prior art keywords
region
pinning
impurity
memory
present
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP9333453A
Other languages
English (en)
Japanese (ja)
Other versions
JPH11150198A5 (enExample
Inventor
Shunpei Yamazaki
舜平 山崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP9333453A priority Critical patent/JPH11150198A/ja
Priority to US09/192,745 priority patent/US6686623B2/en
Publication of JPH11150198A publication Critical patent/JPH11150198A/ja
Priority to US10/694,477 priority patent/US7535053B2/en
Publication of JPH11150198A5 publication Critical patent/JPH11150198A5/ja
Priority to US12/427,140 priority patent/US8222696B2/en
Priority to US13/549,914 priority patent/US8482069B2/en
Withdrawn legal-status Critical Current

Links

Landscapes

  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
JP9333453A 1997-11-18 1997-11-18 不揮発性メモリ及び電子機器 Withdrawn JPH11150198A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP9333453A JPH11150198A (ja) 1997-11-18 1997-11-18 不揮発性メモリ及び電子機器
US09/192,745 US6686623B2 (en) 1997-11-18 1998-11-16 Nonvolatile memory and electronic apparatus
US10/694,477 US7535053B2 (en) 1997-11-18 2003-10-27 Nonvolatile memory and electronic apparatus
US12/427,140 US8222696B2 (en) 1997-11-18 2009-04-21 Semiconductor device having buried oxide film
US13/549,914 US8482069B2 (en) 1997-11-18 2012-07-16 Nonvolatile memory and electronic apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9333453A JPH11150198A (ja) 1997-11-18 1997-11-18 不揮発性メモリ及び電子機器

Publications (2)

Publication Number Publication Date
JPH11150198A true JPH11150198A (ja) 1999-06-02
JPH11150198A5 JPH11150198A5 (enExample) 2005-06-23

Family

ID=18266262

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9333453A Withdrawn JPH11150198A (ja) 1997-11-18 1997-11-18 不揮発性メモリ及び電子機器

Country Status (1)

Country Link
JP (1) JPH11150198A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002100690A (ja) * 2000-07-21 2002-04-05 Semiconductor Energy Lab Co Ltd 不揮発性メモリ及び半導体装置
US6724037B2 (en) 2000-07-21 2004-04-20 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile memory and semiconductor device
CN103903952A (zh) * 2012-12-27 2014-07-02 三菱综合材料株式会社 等离子蚀刻装置用硅部件及其制造方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002100690A (ja) * 2000-07-21 2002-04-05 Semiconductor Energy Lab Co Ltd 不揮発性メモリ及び半導体装置
US6724037B2 (en) 2000-07-21 2004-04-20 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile memory and semiconductor device
US6885059B2 (en) 2000-07-21 2005-04-26 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile memory and semiconductor device
CN103903952A (zh) * 2012-12-27 2014-07-02 三菱综合材料株式会社 等离子蚀刻装置用硅部件及其制造方法

Similar Documents

Publication Publication Date Title
US6686623B2 (en) Nonvolatile memory and electronic apparatus
US7915666B2 (en) Nonvolatile semiconductor memory devices with charge injection corner
TW589734B (en) Nonvolatile semiconductor memory device
US20070272974A1 (en) Twin-gate non-volatile memory cell and method of operating the same
JP2005252034A (ja) 不揮発性半導体メモリ装置とその電荷注入方法、および、電子装置
US7544993B2 (en) Semiconductor storage device and portable electronic equipment
US7566928B2 (en) Byte-operational nonvolatile semiconductor memory device
CN100382322C (zh) 半导体存储器件和便携式电子装置
JP2007227585A (ja) 半導体装置およびその製造方法
US6724037B2 (en) Nonvolatile memory and semiconductor device
JP2010108976A (ja) 半導体装置およびその製造方法
JPH11163171A (ja) 不揮発性メモリ及び電子機器
JP4361145B2 (ja) 不揮発性メモリ及び電子機器
JPH08125043A (ja) 不揮発性半導体記憶装置及びその製造方法
JP2006222367A (ja) 不揮発性半導体メモリ装置、駆動方法、及び製造方法
JP4854375B2 (ja) 半導体記憶装置及びその製造方法、並びに携帯電子機器
JP4013750B2 (ja) 不揮発性半導体記憶装置
US8077512B2 (en) Flash memory cell and method for operating the same
JP4919549B2 (ja) 不揮発性メモリ及び半導体装置
JP2006108668A (ja) 不揮発性メモリ素子とその製造方法
JP2006196686A (ja) 半導体記憶装置及びその製造方法並びに携帯電子機器
JP2004179475A (ja) 不揮発性半導体記憶装置及びその製造方法
JP2012209336A (ja) フィン型不揮発性メモリ素子

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20041001

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20041001

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20050412

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20071120

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20080118

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20080219

A761 Written withdrawal of application

Free format text: JAPANESE INTERMEDIATE CODE: A761

Effective date: 20080303