JPH11145709A - Dielectric resonator and dielectric filter and dielectric duplexer using the resonator, oscillator, and high frequency module - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a dielectric resonator which can easily connect input/output electrodes and a transmission line to a resonance part with high position accuracy and high intensity and can be entirely miniaturized with its free wiring designing ensured. SOLUTION: Conductors 2a and 2b each having circular opening part are formed on both main sides of a dielectric substrate 2 with both opening parts set facing opposite to each other. An insulator layer 2c is formed on the conductor 2a, and an electrode 4 is formed on the layer 2c. Then the conductor plates 3a and 3b are fixedly placed so as to hold the substrate 2 between them, with space intervals partitioning from the substrate 2.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a dielectric filter, an oscillator, and the like used in a microwave band or a millimeter wave band, and further relates to a high-frequency module using the dielectric filter or the oscillator.

[0002]

2. Description of the Related Art In recent years, a large-capacity and high-speed communication system has been demanded in response to a rapid increase in demand for a mobile communication system and multimedia. With such an increase in the amount of information to be communicated, the frequency band to be used is being expanded from the microwave band to the millimeter wave band. Even in such a millimeter-wave band, TE ₀₁ δ made of a conventionally known cylindrical dielectric material is used. It is possible to use a mode dielectric resonator as in the microwave band. However, the general TE ₀₁ δ Since the frequency of the mode dielectric resonator was determined by the external dimensions of the cylindrical dielectric, strict processing accuracy was required. Also, TE ₀₁ δ When a dielectric filter is formed by arranging a plurality of mode dielectric resonators in a metal case at predetermined intervals, the input / output terminal means such as a metal loop and the dielectric resonator, or the dielectric resonator Since the coupling between the dielectric resonator and the dielectric resonator is determined by the distance between them, it is necessary to arrange them with high positional accuracy.

Accordingly, the applicant of the present application has filed Japanese Patent Application No. 7-6262.
No. 5 proposes a dielectric resonator and a dielectric filter which solve these problems and have excellent processing accuracy.

FIG. 9 shows a basic configuration of a dielectric filter according to the above-mentioned application. FIG. 9 is an exploded perspective view of the dielectric filter according to the above application.

[0005] As shown in FIG.
Is composed of a dielectric substrate 102 and conductor plates 103a and 103b.

The dielectric substrate 102 has a certain relative permittivity, and electrodes 102a and 102b having two circular openings on both main surfaces thereof are arranged such that the openings face each other. It is constituted by being formed.

On the conductor 102a side (upper side in FIG. 9) of the dielectric substrate 102, an input terminal coplanar line 104a and an output terminal coplanar line 104b are formed close to the two openings.

The conductor plates 103a and 103b are arranged and fixed at a distance from the substrate 102 near the opening so as to sandwich the dielectric substrate 102. The coplanar line 104a for the input terminal and the coplanar line 104b for the output terminal. Is
It protrudes outward from the conductor plates 103a and 103b.
The conductor plate 103a is provided with a notch so as not to contact the coplanar line 104a for the input terminal and the coplanar line 104b for the output terminal. The conductor plate 103a and the electrode 102a of the dielectric substrate 102 are electrically connected, and the conductor plate 103b and the dielectric substrate 1 are electrically connected.
The 02 electrode 102b is electrically connected.

With such a configuration, the opposing electrode 10
Electromagnetic field energy is confined in the dielectric substrate 102 near the portion between the openings 2a and 102b, and two resonance parts are formed. Each resonating part becomes an individual resonating part, and the adjacent resonating parts are coupled to each other to form a dielectric filter having two-stage resonating parts.

As described above, since the resonance part can be defined by the size of the opening of the electrode, it is possible to use a technique such as etching at the time of manufacturing, and a dielectric material which reproduces the dimensional accuracy of the resonance part with respect to the frequency very accurately. A resonator can be formed, and a desired coupling strength is obtained by arranging the input / output terminal means and the dielectric resonator, or the dielectric resonator and the dielectric resonator with high positional accuracy. Now you can do it.

In such a dielectric filter 101, the resonance portion formed by the dielectric substrate 102 sandwiched between the openings of the opposing electrodes 102a and 102b has high electromagnetic energy confinement. Is formed by the coplanar lines 104a and 104b, the coupling between the resonance part and the input / output terminal means is weak, and the electrodes 102a and 102b
The distance between the opening and the coplanar lines 104a and 104b is made as small as possible to increase the coupling between the resonance part and the input / output terminal means.

A voltage controlled oscillator has been conventionally known as a device using a dielectric resonator. FIG. 10 shows such a voltage controlled oscillator.

[0013] As shown in FIG.
1 has a cylindrical TE ₀₁ δ Mode dielectric resonator 112
Is used.

TE ₀₁ δ The mode dielectric resonator 112 is mounted on a wiring board 113 via a support base 112a having a low dielectric constant. A ground electrode (not shown) is formed on the lower surface of the wiring board 113. In addition, the wiring board 113
It is housed in an upper metal case 130 and a lower metal case 131.

On the wiring board 113, a microstrip line 114 forming a main line and a microstrip line 115 forming a sub line are TE ₀₁ δ. It is formed so as to overlap with the mode dielectric resonator 112 in the direction viewed from above in FIG. 10.

The microstrip line 114 has one end connected to a ground electrode 117 via a chip resistor 116 and the other end connected to the gate of a field effect transistor 118.

The microstrip line 114 constituting the main line and TE ₀₁ δ The mode dielectric resonator 112 is electromagnetically coupled to form a resonance circuit.

One end of the microstrip line 115 is connected to a ground electrode 117 via a varactor diode 119.
, And the other end is an open end.

The oscillation frequency variable circuit is constituted by the microstrip line 115 and the varactor diode 119 constituting the sub line.

The field effect transistor 118 has a drain connected to the input terminal electrode 122 via the microstrip line 121, and a source connected to one end of the microstrip line 123.

A matching stub 124 is connected to the microstrip line 121 at a connection point with the drain of the field effect transistor 118.

The other end of the microstrip line 123 is connected to a ground electrode 117 via a chip resistor 125. The microstrip line 123 is formed in parallel with the microstrip line 126 at a certain interval in the middle so as to be electromagnetically coupled.

The microstrip line 126 is connected to an output terminal electrode 128 via a chip resistor 127.

A chip capacitor 124 is connected to the input terminal electrode 122 in parallel with the microstrip line 121.

The output terminal 128 is connected to the chip resistor 12.
7, a chip capacitor 129 is connected in parallel.

With the above configuration, the varactor diode 119 becomes a variable capacitor according to the applied voltage, and TE ₀₁ δ
The oscillation frequency is changed by changing the resonance frequency of the mode dielectric resonator 112.

[0027]

As described above, FIG.
In the dielectric filter 101 shown in FIG.
The coupling between the resonance part and the input / output terminal means is increased by making the distance between the opening of 2b and the coplanar lines 104a and 104b as small as possible.

However, if the openings of the electrodes 102a and 102b are connected to the exposed portions of the dielectric substrate of the coplanar lines 104a and 104b, the electromagnetic field of the resonating portion may be disturbed and the filter characteristics may be changed. Electrode 1
02a, 102b and coplanar line 104a,
There is also a limit to narrowing the gap with 104b.

Further, by forming the coplanar lines 104a and 104b for input / output terminals formed on one main surface of the substrate 102, the length of the substrate 102 in the resonance portion arrangement direction becomes longer. The length itself was also long. Therefore, the coplanar lines 104a, 1
The space for input / output terminal means such as 04b has been an obstacle to downsizing the dielectric filter 101.

Further, the voltage controlled oscillator 11 shown in FIG.
In 1, TE ₀₁ δ The magnitude of coupling between the mode dielectric resonator 112 and the microstrip line 114 constituting the main line and the microstrip line 115 constituting the sub-line is TE ₀₁ δ. Mode dielectric resonator 112, microstrip line 114, and microstrip line 11
5 and the relative distance was determined. Therefore,
TE ₀₁ δ It has been necessary to arrange the mode dielectric resonator 112, the microstrip line 114, and the microstrip line 115 with high positional accuracy.

Further, TE ₀₁ δ Mode dielectric resonator 11
2 is TE ₀₁ δ The microstrip line 114 spreads greatly around the mode dielectric resonator 112.
In addition, there is a problem that the microstrip lines 121 and 123 other than the microstrip line 115 are coupled. When such unnecessary coupling occurs, the oscillation frequency of the voltage controlled oscillator 111 may become unstable.
Conventionally, TE ₀₁ δ The microstrip lines 121 and 123 that are not to be coupled to the mode dielectric resonator 112 are
E ₀₁ δ The wiring was designed so as to be as far away from the mode dielectric resonator 112 as possible.

However, other than the main line and the sub-line,
TE crossover track₀₁δ Mode dielectric resonator 1
To keep it as far away from 12 as possible
Only that the size of the wiring board 113 becomes larger
As a result, the size of the voltage controlled oscillator 111 itself is also large.
I was nervous.

Further, TE ₀₁ δ Mode dielectric resonator 11
2, the microstrip line 121 that is not desired to be coupled to
123 to TE ₀₁ δ Since the wiring was designed under the condition that it was as far away from the mode dielectric resonator 112 as possible, the degree of freedom in the wiring design was small.

Then, TE ₀₁ δ Mode dielectric resonator 1
12 on the wiring board 113, and TE ₀₁ δ The mode dielectric resonator 112 is covered with an upper metal case 130 for confining the electromagnetic field, and the height of the upper metal case 130 needs to be higher than that of the TE ₀₁ δ mode dielectric resonator 112. Because
The height of the voltage controlled oscillator 111 itself has also been increased.

The present invention has been made in view of these problems, and it is possible to easily and strongly couple input / output terminal means and a transmission line to a dielectric resonator with high positional accuracy. It is an object of the present invention to provide a dielectric resonator, a dielectric filter, a dielectric duplexer, an oscillator, and a high-frequency module that can be downsized and freely designed for wiring.

[0036]

Accordingly, a dielectric resonator according to a first aspect of the present invention includes a dielectric substrate, a first conductor formed on one main surface of the dielectric substrate, and a dielectric substrate. A second conductor formed on the other main surface, a first opening formed in the first conductor such that the dielectric substrate is exposed from the first conductor, and a second conductor formed from the second conductor. A second opening formed in the second conductor so that the dielectric substrate is exposed, and a second opening arranged at a distance from the first conductor so as to cover at least the first opening. A first conductor plate, a second conductor plate disposed at a distance from the second conductor so as to cover at least the second opening, the first opening and the second conductor. A resonance portion determined by an opening, and at least one of the first conductor and the second conductor Has an insulator formed in the upper, and an electrode formed on the insulator.

In the dielectric resonator according to a second aspect, the insulator is formed of a thin film.

In the dielectric resonator according to a third aspect, the electrode is formed so as to overlap at least one of the first opening and the second opening.

In the dielectric resonator according to a fourth aspect, the insulator is made of a material having a lower dielectric constant than the dielectric substrate.

In the dielectric resonator according to the fifth aspect, the second conductive plate has a concave portion formed at a position different from the external terminal and the external terminal, and a conductive material is formed at least on a bottom surface of the concave portion. A first insulating substrate, and a hole larger than an opening of a concave portion of the first insulating substrate.
A second insulating substrate laminated on the first insulating substrate so that the external terminals and the concave portion of the insulating substrate are exposed; and a concave portion of the first insulating substrate and a hole of the second insulating substrate. The dielectric substrate is housed in the housing so that a part of the electrode is directly connected to the external terminal with the surface on which the electrode is formed facing downward. I have.

According to a sixth aspect of the present invention, there is provided a dielectric filter, comprising: a dielectric substrate; a first conductor formed on one main surface of the dielectric substrate; and a second conductor formed on the other main surface of the dielectric substrate. A conductor, a first opening formed in the first conductor,
A second opening formed in the second conductor, a first conductor plate disposed at a distance from the first conductor so as to cover at least the first opening, A second conductor plate disposed at a distance from the second conductor so as to cover the second opening, and a resonance portion determined by the first opening and the second opening. An insulator formed on at least one of the first conductor and the second conductor, and an input terminal electrode or an output terminal electrode formed on the insulator and electromagnetically coupled to the resonance unit. have.

In the dielectric filter according to the present invention, the plurality of first openings and the plurality of second openings are determined by the first opening and the second opening. There are a plurality of resonance units.

In the dielectric filter according to the present invention, a coupling electrode for electromagnetically coupling the plurality of resonance sections is formed on the insulator.

In the dielectric filter according to the ninth aspect, the insulator is formed of a thin film.

In the dielectric filter according to the tenth aspect, the input terminal electrode or the output terminal electrode is formed so as to overlap with at least one of the first opening and the second opening.

In the dielectric filter according to the eleventh aspect, the insulator is formed of a material having a lower dielectric constant than the dielectric substrate.

In the dielectric filter according to the twelfth aspect, the second conductive plate has a concave portion formed at a position different from the external terminal and the external terminal, and a conductive material is formed on at least a bottom surface of the concave portion. A first insulating substrate, and a hole larger than the opening of the concave portion of the first insulating substrate, the external terminal and the concave portion of the first insulating substrate being exposed from the hole on the first insulating substrate. The input terminal electrode or the output terminal electrode comprises a second insulating substrate to be laminated, and a receiving portion formed by a concave portion of the first insulating substrate and a hole of the second insulating substrate. The dielectric substrate is housed in the housing so that the input terminal electrode or the output terminal electrode is directly connected to the external terminal with the formed surface facing down.

The dielectric duplexer according to claim 13 is:
A dielectric substrate, a first conductor formed on one main surface of the dielectric substrate, a second conductor formed on the other main surface of the dielectric substrate, and a first conductor formed on the first conductor. Multiple first
And a plurality of second openings formed in the second conductor, and a plurality of second openings formed at a distance from the first conductor so as to cover at least the plurality of first openings. And a second conductive plate disposed at a distance from the second conductor so as to cover at least the plurality of second openings.
, A plurality of resonating portions determined by the plurality of first openings and the plurality of second openings, and a first resonating portion group of the plurality of resonating portions. First
, A second filter formed of a second resonance unit group different from the first resonance unit group among the plurality of resonance units, and a second filter formed of the first conductor or the second conductor. An insulator formed on at least one of the first filter, an input terminal electrode of the first filter formed on the insulator, and an output terminal electrode of the second filter formed on the insulator; An antenna terminal electrode formed on the insulator and serving as an output terminal electrode of the first filter and an input terminal electrode of the second filter.

In the dielectric duplexer according to a fourteenth aspect, the shapes of the plurality of first openings and the plurality of second openings constituting the first resonance section group and the shape of the second resonance section are provided. The shapes of the plurality of first openings and the plurality of second openings constituting the group are different.

The dielectric duplexer according to claim 15 is:
In the plurality of first openings and the plurality of second openings forming the first resonance unit group, or in the plurality of first openings forming the second resonance unit group, and In the plurality of second openings, the plurality of first openings and the plurality of second openings having different shapes are provided.

In a dielectric duplexer according to a sixteenth aspect, the insulator is formed of a thin film.

In the dielectric duplexer according to a seventeenth aspect, the input terminal electrode, the output terminal electrode, or the antenna terminal electrode is formed so as to overlap at least one of the first opening and the second opening. I have.

In the dielectric duplexer according to claim 18, the insulator is formed of a material having a lower dielectric constant than the dielectric substrate.

In the dielectric duplexer according to the nineteenth aspect, the second conductor plate has a concave portion formed at a position different from the external terminal and the external terminal, and a conductor is formed at least on a bottom surface of the concave portion. A first insulating substrate;
A second insulating substrate having a hole larger than the opening of the concave portion of the insulating substrate, the second insulating substrate being laminated on the first insulating substrate such that the external terminal and the concave portion of the first insulating substrate are exposed from the hole;
A receiving portion formed by a concave portion of the first insulating substrate and a hole of the second insulating substrate, wherein a surface on which the input terminal electrode, the output terminal electrode, or the antenna terminal electrode is formed faces downward. The dielectric substrate is housed in the housing so that the input terminal electrode, output terminal electrode, or antenna terminal electrode is directly connected to the external terminal.

In the oscillator according to the twentieth aspect, the dielectric substrate, the first conductor formed on one main surface of the dielectric substrate, and the second conductor formed on the other main surface of the dielectric substrate A first opening formed in the first conductor, a second opening formed in the second conductor, and the first conductor so as to cover at least the first opening. A first conductor plate disposed at a distance from the first conductor plate, a second conductor plate disposed at a distance from the second conductor so as to cover at least the second opening, A resonator defined by the first opening and the second opening, an insulator formed on at least one of the first conductor and the second conductor, and formed on the insulator A main line that forms a resonance circuit by being electromagnetically coupled to the resonance unit; And a negative resistance circuit connected to the road.

In the oscillator according to the twenty-first aspect, the resonance circuit has an oscillation frequency variable circuit.

In the oscillator according to claim 22, the oscillation frequency variable circuit is controlled by a voltage.

In the oscillator according to claim 23, the insulator is formed of a thin film.

[0059] In the oscillator according to claim 24, the main line is formed so as to overlap at least one of the first opening and the second opening.

[0060] In the oscillator according to claim 25, the insulator is formed of a material having a lower dielectric constant than the dielectric substrate.

[0061] In the oscillator according to the twenty-sixth aspect, the second conductive plate has a concave portion formed at a position different from the external terminal and the external terminal, and a conductive material is formed on at least a bottom surface of the concave portion. An insulating substrate having a hole larger than an opening of the concave portion of the first insulating substrate, the external terminal and the concave portion of the first insulating substrate being laminated on the first insulating substrate so as to be exposed from the hole; A second insulating substrate, and an accommodating portion formed by a concave portion of the first insulating substrate and a hole of the second insulating substrate, wherein an output terminal electrode connected to the resonance circuit is provided. The dielectric substrate is housed in the housing so that a part of the output terminal electrode is directly connected to the external terminal with the formed surface facing down.

A high-frequency module according to claim 27, wherein a dielectric substrate, a first conductor formed on one main surface of the dielectric substrate, and a second conductor formed on the other main surface of the dielectric substrate. A conductor, a first opening formed in the first conductor, a second opening formed in the second conductor, and the first opening so as to cover at least the first opening. A first conductor plate disposed at a distance from a conductor, a second conductor plate disposed at a distance from the second conductor so as to cover at least the second opening, An insulator formed on at least one of a first conductor and the second conductor, a resonance portion determined by the first opening and the second opening, and It has a formed wiring electrode and an electronic component element connected to the wiring electrode.

In the high-frequency module according to claim 28,
The insulator is formed of a thin film.

In the high-frequency module according to claim 29,
A part of the wiring electrode is formed so as to overlap with at least one of the first opening and the second opening.

In the high-frequency module according to claim 30,
The insulator is formed of a material having a lower dielectric constant than the dielectric substrate.

In the high-frequency module according to claim 31,
The second conductive plate includes a first insulating substrate having an external terminal and a concave portion formed at a position different from the external terminal, and a conductive member formed on at least a bottom surface of the concave portion; and the first insulating substrate. A second insulating substrate having a hole larger than the opening of the concave portion, the second insulating substrate being laminated on the first insulating substrate such that the external terminals and the concave portion of the first insulating substrate are exposed from the hole; A part of the wiring electrode and the external terminal, the storage part comprising a recess formed in the insulating substrate and a hole formed in the second insulating substrate; The dielectric substrate is accommodated in the accommodation portion so that is directly connected.

As described above, in the dielectric resonator according to claim 1, the dielectric filter according to claim 6, the dielectric duplexer according to claim 13, and the oscillator according to claim 20,
Since the electrodes and the lines are formed on the conductor of the dielectric substrate via the insulator, the distance between the resonance part and the electrodes can be fixed. Since the electrodes are formed on the conductors of the dielectric substrate via the insulator in this manner, the distance between the resonance section and the electrodes or the lines can be fixed.

As described above, the dielectric resonator according to claim 2, the dielectric filter according to claim 9, the duplexer according to claim 16, the oscillator according to claim 23, and the claim 2
In the high-frequency module according to No. 8, by making the insulator a thin film and controlling the film thickness, the positional relationship between the resonance part and the electrode or the line can be set with higher accuracy.

As described above, the dielectric resonator according to claim 3, the dielectric filter according to claim 10, the dielectric duplexer according to claim 17, the oscillator according to claim 24, and the high-frequency module according to claim 29 Then, like this, the first
Forming an electrode or a line via an insulator on a resonating portion composed of a dielectric substrate positioned between a first opening formed in the first conductor and an opening of the second conductor. Therefore, the coupling between the resonance part and the electrode or the line can be strengthened.

As described above, the dielectric resonator according to claim 4, the dielectric filter according to claim 11, and claim 18.
The dielectric duplexer according to claim 1, wherein the oscillator according to claim 25,
In the high-frequency module according to claim 30, since the insulator is made of a material having a lower dielectric constant than the dielectric substrate, it is possible to reduce the influence on the resonance frequency of the resonance unit and the no-load Q, The generation of extra stray capacitance between electrodes and lines formed on the insulator on the dielectric substrate can be suppressed.

As described above, the dielectric resonator according to the fifth aspect, the dielectric filter according to the twelfth aspect, and the nineteenth aspect.
The dielectric duplexer according to claim, the oscillator according to claim 26,
In the high-frequency module according to claim 31, the second conductor plate is an insulating package having an external terminal, and a part of the wiring electrode formed on the insulator is directly connected to the external terminal of the insulating package. Therefore, components such as connection wires are not required, and unnecessary inductance at high frequencies can be eliminated.

As described above, in the dielectric filter according to the seventh aspect, since there are a plurality of resonating portions, a multi-stage resonating portion can be obtained.

As described above, in the dielectric filter according to the eighth aspect, since the coupling electrode for electromagnetically coupling the plurality of resonating parts is formed on the insulator, the coupling between the plurality of resonating parts is strengthened. can do.

As described above, in the dielectric duplexer according to the fourteenth aspect, since the shape of the first resonance unit group is different from the shape of the second resonance unit group,
The passband and spurious characteristics of the first filter formed by the group of resonance units can be made different from the passband and spurious characteristics of the second filter formed by the second group of resonance units.

As described above, in the dielectric duplexer according to the fifteenth aspect, in the plurality of first openings and the plurality of second openings constituting the first resonance section group,
Alternatively, the plurality of first resonators constituting the second resonance unit group
And the plurality of first openings and the plurality of second openings having different shapes in the plurality of second openings and the plurality of second openings. The passband characteristics and spurious characteristics of the first filter or the passband characteristics and spurious characteristics of the second filter formed by the second resonance unit group are set to desired values by the shape and arrangement of the opening. Can be.

As described above, in the oscillator according to claim 21, since the resonance circuit has the oscillation frequency variable circuit, the oscillation frequency can be varied.

As described above, in the oscillator according to claim 22, since the oscillation frequency variable circuit is controlled by the voltage, a voltage controlled oscillator can be obtained.

In the high-frequency module according to claim 27,
Since the dielectric substrate constituting the resonance part is used as it is as the wiring substrate and the electronic component elements are connected to the wiring electrodes, the high-frequency module can be integrated.

[0079]

DESCRIPTION OF THE PREFERRED EMBODIMENTS A first embodiment of the present invention will be described below with reference to FIG. FIG. 1 is an exploded perspective view of the dielectric resonator according to the first embodiment.

As shown in FIG. 1, the dielectric resonator 1 includes a dielectric substrate 2 and conductive plates 3a and 3b.

The dielectric substrate 2 has a certain relative permittivity, and the conductors 2a and 2b having one circular opening on both main surfaces are arranged such that the openings on both main surfaces face each other. It is constituted by being formed in. The openings of the conductors 2a and 2b of the dielectric substrate 2 are set to have a size corresponding to a predetermined frequency.

On the conductor 2a side of the dielectric substrate 2, the conductor 2a
An insulator layer 2c is formed thereon by a thin film forming technique. The insulator layer 2c is made of a material having a low dielectric constant such as polytetrafluoroethylene. Further, the insulator layer 2c
The electrode 4 is formed thereon.

The conductor plates 3a and 3b are arranged and fixed so as to sandwich the dielectric substrate 2 at a distance from the dielectric substrate 2 near the opening, and the electrodes 4 and the conductor plates 3a and 3b are insulated. Have been. The electrode 4 is led out of the conductor plates 3a, 3b.

With this configuration, the opening and the portion of the dielectric substrate sandwiched between the openings function as a resonance portion, and thus the dielectric resonator 1 having one resonance portion is obtained. Further, as described above, in the configuration of the present embodiment, since the electrodes can be configured close to the opening, stronger input / output terminal coupling can be obtained. Further, since the insulator layer 2c is formed of a thin film, its thickness can be freely controlled, and the distance between the input / output terminal electrode and the resonance section can be set with high accuracy. Furthermore, since the insulator layer is made of a material with a low dielectric constant such as polytetrafluoroethylene as compared with a dielectric substrate with a high dielectric constant, unnecessary coupling with other electrodes formed on the same surface may occur. Characteristics can be prevented. Further, since the insulator layer is made of a material having a low dielectric constant, the loss can be reduced, and the influence on the resonance frequency of the resonance portion and the no-load Q can be reduced.

In FIG. 1, the insulator layer 2c is formed only on the conductor 2a side of the dielectric substrate 2, but this is not a limitation. For example, as shown in FIG. It may be provided on the side.

Next, a second embodiment of the present invention will be described with reference to FIG. FIG. 2 is an exploded perspective view of the dielectric filter according to the second embodiment.

As shown in FIG. 2, the dielectric filter 11
Is composed of a dielectric substrate 12 and conductor plates 13a and 13b.

The dielectric substrate 12 has a certain relative permittivity, and the conductors 12a and 12b having two circular openings on both main surfaces thereof are arranged such that the openings on both main surfaces face each other. It is constituted by being formed in. The openings of the conductors 12a and 12b of the dielectric substrate 12 are set to have a size corresponding to a predetermined frequency.

On the conductor 12a side of the dielectric substrate 12, an insulator layer 12c is formed on the conductor 12a by a thin film forming technique. The insulator layer 12c is made of a material having a low dielectric constant such as polytetrafluoroethylene. Furthermore, on the insulator layer 12c, the input terminal electrode 14a and the output terminal electrode 1
4b is formed.

The conductor plates 13a and 13b are arranged and fixed so as to sandwich the dielectric substrate 12 at a distance from the dielectric substrate 12 in the vicinity of the opening, and the input terminal electrode 14a and the output terminal electrode 14b are fixed. The conductor plates 13a and 13b are insulated. Further, the input terminal electrode 14a and the output terminal electrode 1
4b is derived from the conductor plates 13a and 13b.

With this configuration, the opening and the portion of the dielectric substrate sandwiched between the openings function as a resonance section, so that the dielectric filter 11 having a two-stage resonance section can be obtained. Further, as described above, in the configuration of the present embodiment, since the input / output terminal electrode can be configured closer to the opening as compared with the conventional structure, stronger input / output coupling can be obtained. Also,
Since the insulator layer 12c is formed of a thin film, its thickness can be freely controlled, and the distance between the input / output terminal electrode and the resonance section can be set with high accuracy. Furthermore, since the insulator layer is made of a material having a low dielectric constant such as polytetrafluoroethylene as compared with a dielectric substrate having a high dielectric constant, the insulating layer can be connected to other electrodes formed between input / output terminal electrodes or on the same surface. It is possible to prevent characteristic deterioration due to generation of unnecessary coupling. Further, since the insulator layer is made of a material having a low dielectric constant, the loss can be reduced, and the influence on the resonance frequency of the resonance portion and the no-load Q can be reduced.

In FIG. 2, a dielectric filter having two stages of resonance units has been described. However, the present invention is not limited to this, and a dielectric filter having three or more stages of resonance units may be used.

In FIG. 2, the insulator layer 12c is formed only on the conductor 12a side of the dielectric substrate 12, but this is not a limitation. For example, as shown in FIG.
It may be provided on the side of the second conductor 12b.

Further, a modification of the second embodiment of the present invention will be described with reference to FIG. FIG. 3 shows that the insulator layers 12 are provided on both the conductor 12a side and the conductor 12b side of the dielectric substrate 12.
It is an exploded perspective view of dielectric filter 11a in which c and 12d were formed. The same parts as those in FIG.
Detailed description is omitted.

As shown in FIG. 3, the point different from FIG. 2 is that the insulator layer 12d is formed and the coupling adjusting electrode 1
4c is formed.

On the conductor 12a side of the dielectric substrate 12, an insulator layer 12c is formed, and on the insulator layer 12c, an input terminal electrode 14a is formed. Furthermore, an insulator layer 12d is formed on the conductor 12b side of the dielectric substrate 12, and an output terminal electrode 14b is formed on the insulator layer 12d.

The conductor 12a is formed on the insulator layer 12c.
The coupling electrode 14c is formed so as to overlap the two openings.

As described above, since the input terminal electrode 14a and the output terminal electrode 14b are formed on different surfaces of the dielectric substrate 12, it is possible to prevent electromagnetic coupling between the input / output terminal electrodes 14a and 14b. it can. Also, the coupling electrode 1
By forming 4c, the coupling between the two resonance units can be strengthened. By adjusting the size of the coupling electrode 14c, the coupling between the resonance parts can be set freely.

Hereinafter, a third embodiment of the present invention will be described with reference to FIG. FIG. 4 is an exploded perspective view of the dielectric duplexer according to the third embodiment.

As shown in FIG. 4, the dielectric duplexer 7
1 is composed of a dielectric substrate 72 and conductor plates 73a and 73b.

The dielectric substrate 72 has a certain relative permittivity, and conductors 72a and 72b having four circular openings on both main surfaces thereof are arranged such that the openings on both main surfaces face each other. It is constituted by being formed in. The openings of the conductors 72a and 72b of the dielectric substrate 72 are set to have a size corresponding to a predetermined frequency.

With this configuration, the conductor 72
Since the openings a and 72b and the portion of the dielectric substrate sandwiched therebetween resonate, four resonating portions are formed. Two of the four resonating units are the first resonating unit group 75
To function as a transmission filter, and the remaining two of the four resonating units form a second resonating unit group 76 and function as a receiving filter.

On the conductor 72a side of the dielectric substrate 72, an insulator layer 72c is formed on the conductor 72a by a thin film forming technique. The insulator layer 72c is made of a material having a low dielectric constant such as polytetrafluoroethylene. Further, the input terminal electrode 74a and the output terminal electrode 7 are formed on the insulator layer 72c.
4b, an antenna terminal electrode 74c is formed.

The input terminal electrode 74a is connected to the first resonance section group 75.
The antenna terminal electrode 74c is electromagnetically coupled to the first resonance unit group 75 and functions as an output terminal electrode of the transmission filter. The antenna terminal electrode 74c is electromagnetically coupled to the second resonance section group 76 to function as an input terminal electrode of the reception filter, and the output terminal electrode 74b is electromagnetically coupled to the second resonance section group 75 and outputs the output of the reception filter. Functions as a terminal electrode.

The conductor plates 73a and 73b are arranged and fixed at a distance from the dielectric substrate 72 near the opening so as to sandwich the dielectric substrate 72, and the input terminal electrode 74a and the output terminal electrode 74b, The antenna terminal electrode 74c and the conductor plates 73a and 73b are insulated. Further, the input terminal electrode 74a, the output terminal electrode 74b, and the antenna terminal electrode 74c are derived from the conductor plates 73a, 73b.

With this configuration, it is possible to obtain a dielectric duplexer including a transmission filter having two stages of resonance parts and a reception filter having two stages of resonance parts. Further, as described above, in the configuration of the present embodiment, since the input / output terminal electrode can be configured closer to the opening as compared with the conventional structure, stronger input / output terminal coupling can be obtained. Further, since the insulator layer 2c is formed of a thin film, its thickness can be freely controlled, and the distance between the input / output terminal electrode and the resonance section can be set with high accuracy.
Therefore, the distance between the transmission filter and the reception filter can be set with high accuracy, and unnecessary coupling with each other can be prevented.

Further, since the insulating layer is made of a material having a low dielectric constant such as polytetrafluoroethylene as compared with a dielectric substrate having a high dielectric constant, the insulating layer is formed between input / output terminal electrodes, an antenna terminal electrode or the same surface. It is possible to prevent characteristic deterioration due to unnecessary coupling with other formed electrodes and the like. Further, since the insulator layer is made of a material having a low dielectric constant, the loss can be reduced, and the influence on the resonance frequency of the resonance portion and the no-load Q can be reduced.

Next, a modification of the third embodiment will be described with reference to FIG. Dielectric duplexer 8 of the present modified example
1 is different from the dielectric duplexer 71 described with reference to FIG. 7 in that the shape of the first resonance unit group 85 forming the transmission filter is different from the shape of the second resonance unit group 86 forming the reception filter. .

That is, the size per one of the two resonating units constituting the first resonating unit group is made larger than the size per one of the three resonating units constituting the second resonating unit group. ing.

By making the shape of the first resonance unit group 85 forming the transmission filter different from the shape of the second resonance unit group 86 forming the reception filter in this way, the pass band of the transmission filter and the reception filter can be improved. The spurious characteristics can be different.

In this modification, the size of the first resonance unit group forming the transmission filter is set to be larger than the size of the second resonance unit group forming the reception filter. However, the present invention is not limited to this. Instead, the size of the first resonance unit group may be made smaller than the size of the second resonance unit group.

In this modification, the size of the first resonance unit group and the size of the second resonance unit group are made different from each other.
Although the pass band and spurious characteristics of the transmission filter and the reception filter are different, this is not a limitation. For example,
By making the shape of the opening of the first resonance unit group rectangular and the shape of the opening of the second resonance unit group circular, the passbands and spurious characteristics of the transmission filter and the reception filter may be made different. .

Further, another modification of the third embodiment will be described with reference to FIG. The dielectric duplexer 91 of the present modified example includes a first resonance unit group 9 forming a transmission filter.
The difference between the dielectric duplexer 91 described with reference to FIG. 4 is that the shape of the opening in the fifth duplexer 5 is different and that the shape of the opening of the second resonating unit group 96 constituting the receiving filter is different. different.

That is, the two resonating units constituting the first resonating unit group are different in size. In addition, the three resonating units forming the second resonating unit group have different sizes and different shapes.

As described above, by changing the shape of the inside of the first resonance unit group 95 constituting the transmission filter or the inside of the second resonance unit group 96 constituting the reception filter, the pass band of the transmission filter or the reception filter can be improved. The spurious characteristic can be set to a desired value.

Next, a fourth embodiment will be described with reference to FIG. FIG. 7 is an exploded perspective view of the voltage controlled oscillator according to the fourth embodiment.

As shown in FIG. 7, the voltage controlled oscillator 21
Is composed of a dielectric substrate 22 and conductive plates 23a and 23b.

Electrodes 22a, 22a having one circular opening on both main surfaces of dielectric substrate 22 having a constant relative dielectric constant.
2b is formed such that the openings on both main surfaces face each other.

The openings of the conductors 22a and 22b of the dielectric substrate 22 are set to have a size corresponding to a predetermined frequency.
On the conductor 22a side of the dielectric substrate 22, a low dielectric constant insulator layer 22c such as polytetrafluoroethylene is formed.

On the insulator layer 22c, a microstrip line 24 constituting a main line and a microstrip line 25 constituting a sub line are formed so as to overlap the opening of the conductor 22a in the vertical direction in FIG. .

The microstrip line 24 has one end connected to a ground electrode 27 via a resistance film 26.
The other end is connected to the gate of the field effect transistor 28.

The microstrip line 24 constituting the main line is electromagnetically coupled with the resonance portion formed by the openings of the conductors 22a and 22b and the dielectric substrate sandwiched between the openings, thereby forming a resonance circuit. Be composed.

One end of the microstrip line 25 is connected to the ground electrode 27 via the varactor diode 29, and the other end is an open end.

The microstrip line 25 and the varactor diode 29 constituting the sub-line constitute an oscillation frequency variable circuit.

The inductor 30 is connected in parallel to the connection end of the varactor diode 29 of the microstrip line 25.
Are connected, and the inductor 30 is connected via a resistive film 31 to a bias electrode 32 for applying a bias voltage. Further, the microstrip line 24 constituting the main line is connected to the bias electrode 32 to an earth electrode 27 connected via a resistive film 26.

The field effect transistor 28 has a drain connected to the input terminal electrode 35 via the microstrip line 34.
a, and the source is connected to one end of the microstrip line 36. Also, the input terminal electrode 35
a is connected to the ground electrode 27 via the capacitor 40.

A matching stub 37 is connected to the microstrip line 34 at a connection point with the drain of the field effect transistor 28.

The other end of the microstrip line 36 is connected to the ground electrode 27 via the resistance film 38. Further, the microstrip line 36 is formed in parallel with the microstrip line 39 at a predetermined interval so as to be electromagnetically coupled.

The microstrip line 39 is connected to the output terminal electrode 35b.

Further, all the ground electrodes 27 are connected to the conductor 22a via through holes.

The insulating package 23 includes a first insulating substrate 23a and a second insulating substrate 23b.

The first insulating substrate 23a has a concave portion 23c, and external terminals 23d are formed so as to surround the concave portion 23c.
Are formed. The conductor 2 is provided on the bottom surface of the concave portion 23c.
In the second insulating substrate 23b on which the third insulating substrate 3e is formed, a hole 23f larger than the concave portion 23c of the first insulating substrate 23a is formed.
It is laminated so that the recess 23c of 3a and the external terminal 23d are exposed.

In this hole 23f, the dielectric substrate 22 is inserted.
The input / output terminal electrode, the bias electrode, and the ground electrode are housed so as to be connected to the external terminals 23d, respectively, with the insulating layer 22c side facing down, and sealed with a conductor plate (not shown).

With the above configuration, the varactor diode 29 becomes a variable capacitor according to the applied voltage, and the conductor 22a,
22b and the portion of the dielectric substrate 2 located between the openings
The oscillation frequency is changed by changing the resonance frequency of the resonating unit constituted by 2.

As described above, in the configuration of the present embodiment, the thickness of the resonance portion can be significantly reduced as compared with the conventional structure, and therefore, the height of the voltage controlled oscillator itself can be reduced as compared with the conventional structure. it can. Further, since the microstrip line 24 forming the main line and the microstrip line 25 forming the sub line can be configured closer to the conventional structure, stronger input / output terminal coupling can be obtained. Further, since the insulator layer 22c is formed of a thin film, its thickness can be freely controlled, and the distance between the microstrip line and the resonance section can be set with high accuracy.

Furthermore, since the insulating layer is made of a material having a low dielectric constant such as polytetrafluoroethylene as compared with a dielectric substrate having a high dielectric constant, the insulating layer is formed between the wiring electrodes, the main line and the sub line, or on the same plane. It is possible to prevent characteristic deterioration due to unnecessary coupling with other formed electrodes and the like. Also,
Since the insulator layer is made of a material having a low dielectric constant, the loss can be reduced, and the influence on the resonance frequency of the resonance section and the no-load Q can be reduced.

Also, since the resonance section as in the present embodiment has better energy confinement than the conventional TE01δ mode dielectric resonator, the microstrip line 24 forming the main line and the microstrip line forming the sub-line are formed. Unnecessary coupling with lines and components other than the strip line 25 does not occur.
Therefore, it is possible to design a wiring more freely than in the conventional case. Further, in this embodiment, since the input / output terminal electrode, the bias electrode, and the ground electrode are directly connected to the external terminals of the insulating package, a bonding wire becomes unnecessary, and unnecessary inductance at high frequencies can be eliminated.

Although the present embodiment has been described using a voltage-controlled oscillator, the present invention is not limited to this. For example, a normal oscillator having no control function can be used.

Further, the insulating package serving as the second conductive plate described in the present embodiment is not limited to the oscillator, but also includes the dielectric resonator according to the first embodiment and the dielectric resonator according to the second embodiment. It is also applicable to a body filter and the dielectric duplexer of the third embodiment.

Next, a fifth embodiment will be described with reference to FIG. FIG. 8 is an exploded perspective view of the high-frequency transceiver module 41 according to the fifth embodiment.

As shown in FIG. 8, the high-frequency transmission / reception module 41 includes a dielectric substrate 42 and conductive plates 43a and 43b.

The electrodes 22a, 22a having nine circular openings on both main surfaces of a dielectric substrate 42 having a constant relative dielectric constant.
2b is formed such that the openings on both main surfaces face each other.

The nine opposing openings and the portion of the dielectric substrate 42 sandwiched between the openings are sandwiched between conductive plates 43a and 43b that are spaced apart from each other to form a resonance portion.

The resonance section is used for the duplexer 46, the bandpass filters 47 and 48, and the voltage controlled oscillator 49. The conductors 42a and 42b of the dielectric substrate 42
Is set to a size corresponding to a predetermined frequency.

On the conductor 42a side of the dielectric substrate 42, a low dielectric constant insulating layer 42c such as polytetrafluoroethylene is formed.
Are formed.

A wiring electrode is formed on the insulator layer 42c, and connects each circuit section.

The conductor plate 43a is provided with a slot antenna 43.
c is formed.

The duplexer 46 is connected to the slot antenna 43c.

The duplexer 46 uses four of the above nine resonance parts. Two of the four resonators constitute a transmission filter, and the remaining two constitute a reception filter.

A low-noise amplifier 50 is connected to the receiving filter of the duplexer 46, and a band-pass filter 47 is connected to the low-noise amplifier 50.
The mixer 51 is connected to the bandpass filter 47. The mixer 51 combines the received signal from the bandpass filter 47 and the local signal from the voltage controlled oscillator 49 and outputs the combined signal to the receiving terminal 53 via the bandpass filter 52.

A power amplifier 54 is connected to the transmission-side filter of the duplexer 46, and a band-pass filter 48 is connected to the power amplifier 54. A mixer 55 is connected to the bandpass filter 48. The mixer 55 is connected to a band-pass filter 57 from a transmission terminal 56.
The transmission signal input through the input terminal and the voltage controlled oscillator 49
And a bandpass filter 48.
Input terminal.

The voltage controlled oscillator 49 includes an amplifying FET 5
8 and 59 are connected, and the amplification FET 58 is connected to the mixers 51 and 55. The amplification FET 59 is 2
It is connected to a phase lock loop IC 62 via two prescalers 60, 61. The phase lock loop IC 62 is connected to a voltage controlled oscillator 49 via a low pass filter 63.

With this configuration, the transmission and reception modules can be integrated, and the size can be reduced.

The second conductor plate 43 of the present embodiment
b is the conductor plate 23b of the fourth embodiment shown in FIG.
Such an insulating package as described above may be used.

As described above, the present invention is described in the first embodiment to the fifth embodiment.
However, the present invention is not limited to the applications of the first to fifth embodiments, and any device using a resonance unit, It can be applied to modules.

[0156]

As described above, according to the present invention, the distance between the resonance part and the electrode is fixed by providing the insulator on the dielectric substrate having the resonance part and forming the electrode and the line. Thus, it is possible to obtain a dielectric resonator, a dielectric filter, a dielectric duplexer, and an oscillator in which the positional relationship between the resonator and the electrodes and the lines is set with high precision.

Further, since the dielectric resonator device can be integrated by using the wiring electrode formed on the insulator for the wiring pattern, the size of a high-frequency module such as a transmission / reception module can be reduced.

[Brief description of the drawings]

FIG. 1 is an exploded perspective view of a dielectric resonator according to a first embodiment.

FIG. 2 is an exploded perspective view of a dielectric filter according to a second embodiment.

FIG. 3 is an exploded perspective view of a dielectric filter according to a modification of the second embodiment.

FIG. 4 is an exploded perspective view of a dielectric duplexer according to a third embodiment.

FIG. 5 is an exploded perspective view of a dielectric duplexer according to a modification of the third embodiment.

FIG. 6 is an exploded perspective view of a dielectric duplexer according to another modification of the third embodiment.

FIG. 7 is an exploded perspective view of a voltage controlled oscillator according to a fourth embodiment.

FIG. 8 is a partially broken perspective view of a high-frequency transceiver module according to a fourth embodiment.

FIG. 9 is an exploded perspective view of a dielectric filter previously proposed by the present applicant.

FIG. 10 is an exploded perspective view of a conventional voltage controlled oscillator using a dielectric resonator.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Dielectric resonator 2 Dielectric substrate 2a, 2b Conductor 2c Insulator layer 3a, 3b Conductor plate 4 Electrode

Continued on the front page (72) Inventor Toshiro Hiratsuka 2-26-10 Tenjin, Nagaokakyo-shi, Kyoto Inside Murata Manufacturing Co., Ltd. (72) Inventor Shigeyuki Mikami 2-26-10 Tenjin, Nagaokakyo-shi, Kyoto Murata Manufacturing Co., Ltd.

Claims (31)

[Claims] A first conductor formed on one main surface of the dielectric substrate; a second conductor formed on the other main surface of the dielectric substrate; A first opening formed in the first conductor so that the dielectric substrate is exposed from the conductor; and a second opening formed in the second conductor so that the dielectric substrate is exposed from the second conductor. A second conductor, a first conductor plate disposed at a distance from the first conductor so as to cover at least the first opening, and to cover at least the second opening. A second conductor plate disposed at a distance from the second conductor, a resonance portion determined by the first opening and the second opening, the first conductor or the An insulator formed on at least one of the second conductors; and an insulator formed on the insulator. Dielectric resonator and having an electrode. 2. The dielectric resonator according to claim 1, wherein said insulator is a thin film. 3. The dielectric resonator according to claim 1, wherein the electrode is formed so as to overlap at least one of the first opening and the second opening. . 4. The dielectric resonator according to claim 1, wherein said insulator is formed of a material having a lower dielectric constant than said dielectric substrate. 5. A first insulating substrate, wherein said second conductor plate has a recess formed at a position different from an external terminal and said external terminal, and a conductor is formed at least on a bottom surface of said recess.
A second insulating layer having a hole larger than the opening of the concave portion of the first insulating substrate, the second insulating layer being laminated on the first insulating substrate such that the external terminal and the concave portion of the first insulating substrate are exposed from the hole; A part of the electrode with the surface on which the electrode is formed facing downward, comprising a substrate, and a receiving part formed by a concave portion of the first insulating substrate and a hole of the second insulating substrate. 5. The dielectric resonator according to claim 1, wherein the dielectric substrate is accommodated in the accommodation portion so that the dielectric substrate is directly connected to the external terminal. 6. A dielectric substrate, a first conductor formed on one main surface of the dielectric substrate, a second conductor formed on the other main surface of the dielectric substrate, A first opening formed in the conductor, a second opening formed in the second conductor, and spaced from the first conductor so as to cover at least the first opening A first conductor plate, a second conductor plate disposed at a distance from the second conductor so as to cover at least the second opening, A resonating part determined by a second opening; an insulator formed on at least one of the first conductor and the second conductor; a resonating part formed on the insulator; An input terminal electrode or an output terminal electrode for electromagnetically coupling. Data. 7. The first opening and the second opening due to the presence of a plurality of the first opening and the second opening.
7. The dielectric filter according to claim 6, wherein there are a plurality of resonance parts determined by the openings. 8. The dielectric filter according to claim 7, wherein a coupling electrode for electromagnetically coupling the plurality of resonance parts is formed on the insulator. 9. The dielectric filter according to claim 6, wherein said insulator is a thin film. 10. The device according to claim 6, wherein said input terminal electrode or output terminal electrode is formed so as to overlap at least one of said first opening and said second opening. 10. The dielectric filter according to claim 8 or claim 9. 11. The device according to claim 6, wherein said insulator is formed of a material having a lower dielectric constant than said dielectric substrate. Dielectric filter. 12. The second conductive plate has a first insulating substrate having an external terminal and a concave portion formed at a position different from the external terminal, and a conductive material formed on at least a bottom surface of the concave portion. A second insulating substrate having a hole larger than the opening of the concave portion of the first insulating substrate, the second insulating substrate being laminated on the first insulating substrate such that the external terminal and the concave portion of the first insulating substrate are exposed from the hole; And an accommodating portion composed of a concave portion of the first insulating substrate and a hole of the second insulating substrate, with the surface on which the input terminal electrode or the output terminal electrode is formed facing downward. 9. The dielectric substrate is housed in the housing so that the input terminal electrode or output terminal electrode is directly connected to the external terminal. 9, claim 10 or claim 11
The dielectric filter as described in the above. 13. A dielectric substrate; a first conductor formed on one main surface of the dielectric substrate; a second conductor formed on the other main surface of the dielectric substrate; A plurality of first openings formed in the conductor; a plurality of second openings formed in the second conductor; and the first conductor so as to cover at least the plurality of first openings. A first conductor plate arranged at a distance from, and a second conductor plate arranged at a distance from the second conductor so as to cover at least the plurality of second openings; A plurality of resonance units determined by the plurality of first openings and the plurality of second openings; a first filter configured by a first resonance unit group of the plurality of resonance units; A second resonating unit group that is different from the first resonating unit group among the plurality of resonating units. An insulator formed on at least one of the first conductor and the second conductor; an input terminal electrode of the first filter formed on the insulator; An output terminal electrode of the second filter formed on the body; an output terminal electrode of the first filter formed on the insulator; and an input terminal electrode of the second filter. A dielectric duplexer comprising: an antenna terminal electrode. 14. A shape of the plurality of first openings and the plurality of second openings constituting the first resonance section group,
14. The dielectric duplexer according to claim 13, wherein the plurality of first openings and the plurality of second openings constituting the second resonance unit group have different shapes. 15. The plurality of first openings having different shapes within the shapes of the plurality of first openings and the plurality of second openings constituting the first resonance section group. 15. The dielectric duplexer according to claim 13, comprising a plurality of second openings. 16. The dielectric duplexer according to claim 13, wherein said insulator is a thin film. 17. The semiconductor device according to claim 17, wherein said input terminal electrode, output terminal electrode, or antenna terminal electrode is formed so as to overlap at least one of said first opening and said second opening. 13, Claim 14, Claim 1
The dielectric duplexer according to claim 5 or claim 16. 18. The semiconductor device according to claim 13, wherein said insulator is formed of a material having a lower dielectric constant than said dielectric substrate.
Claim 14, Claim 15, Claim 16, or Claim 17
The dielectric duplexer as described. 19. A second insulating plate comprising: a first insulating substrate having an external terminal and a concave portion formed at a position different from the external terminal; and a conductive member formed on at least a bottom surface of the concave portion; A second insulating substrate having a hole larger than the opening of the concave portion of the first insulating substrate, the second insulating substrate being laminated on the first insulating substrate such that the external terminal and the concave portion of the first insulating substrate are exposed from the hole; And a receiving portion formed by a concave portion of the first insulating substrate and a hole of the second insulating substrate, and a surface on which the input terminal wiring, the output terminal electrode, or the antenna terminal electrode is formed. 14. The dielectric substrate is housed in the housing so that the input terminal wiring or the output terminal electrode or the antenna terminal electrode is directly connected to the external terminal with the surface of the dielectric substrate facing down. 1
The dielectric duplexer according to claim 15, claim 15, 16, 16, 17 or 18. 20. A dielectric substrate; a first conductor formed on one main surface of the dielectric substrate; a second conductor formed on the other main surface of the dielectric substrate; A first opening formed in the conductor, a second opening formed in the second conductor, and spaced from the first conductor so as to cover at least the first opening A first conductor plate, a second conductor plate disposed at a distance from the second conductor so as to cover at least the second opening, A resonating part determined by a second opening; an insulator formed on at least one of the first conductor and the second conductor; a resonating part formed on the insulator; A main line forming a resonance circuit by electromagnetic field coupling; and a negative line connected to the resonance circuit. An oscillator comprising: a resistor circuit. 21. The oscillator according to claim 20, wherein said resonance circuit has an oscillation frequency variable circuit. 22. The oscillator according to claim 21, wherein said oscillation frequency variable circuit is controlled by a voltage. 23. The oscillator according to claim 20, wherein said insulator is a thin film. 24. The apparatus according to claim 20, wherein the main line is formed so as to overlap at least one of the first opening and the second opening. The oscillator according to claim 23. 25. The semiconductor device according to claim 20, wherein said insulator is formed of a material having a lower dielectric constant than said dielectric substrate.
Claim 21, Claim 22, Claim 23 or Claim 24
The oscillator as described. 26. The second conductive plate, wherein: a first insulating substrate having an external terminal and a concave portion formed at a position different from the external terminal, wherein a conductive material is formed on at least a bottom surface of the concave portion; A second insulating substrate having a hole larger than the opening of the concave portion of the first insulating substrate, the second insulating substrate being laminated on the first insulating substrate such that the external terminal and the concave portion of the first insulating substrate are exposed from the hole; And an accommodating portion formed by a concave portion of the first insulating substrate and a hole of the second insulating substrate, wherein a surface on which an output terminal electrode connected to the resonance circuit is formed is directed downward. The said dielectric substrate was accommodated in the said accommodating part so that a part of the said output terminal electrode and the said external terminal could be directly connected, The claim 20, Claim 21, Claim 22 characterized by the above-mentioned. An oscillator according to claim 23, claim 24 or claim 25. 27. A dielectric substrate, a first conductor formed on one main surface of the dielectric substrate, a second conductor formed on the other main surface of the dielectric substrate, A first opening formed in the conductor, a second opening formed in the second conductor, and spaced from the first conductor so as to cover at least the first opening A first conductor plate, a second conductor plate disposed at a distance from the second conductor so as to cover at least the second opening, and the first conductor or the second conductor plate. An insulator formed on at least one of the two conductors; a resonance unit determined by the first opening and the second opening; a wiring electrode formed on the insulator; A high-frequency module comprising: an electronic component element connected to the wiring electrode. 28. The high-frequency module according to claim 27, wherein said insulator is a thin film. 29. The method according to claim 27, wherein a part of the wiring electrode is formed so as to overlap at least one of the first opening and the second opening. High frequency module. 30. The semiconductor device according to claim 27, wherein said insulator is formed of a material having a lower dielectric constant than said dielectric substrate.
30. The high-frequency module according to claim 28. 31. The second conductive plate, wherein a first insulating substrate having an external terminal and a concave portion formed at a position different from the external terminal and a conductive material formed on at least a bottom surface of the concave portion; A second insulating substrate having a hole larger than the opening of the concave portion of the first insulating substrate, the second insulating substrate being laminated on the first insulating substrate such that the external terminal and the concave portion of the first insulating substrate are exposed from the hole; And a receiving portion formed by a concave portion of the first insulating substrate and a hole of the second insulating substrate. 31. The high-frequency module according to claim 27, wherein the dielectric substrate is accommodated in the accommodation part such that the part and the external terminal are directly connected.