JPH1114558A - Measuring method for surface resistance - Google Patents

Measuring method for surface resistance

Info

Publication number
JPH1114558A
JPH1114558A JP16863597A JP16863597A JPH1114558A JP H1114558 A JPH1114558 A JP H1114558A JP 16863597 A JP16863597 A JP 16863597A JP 16863597 A JP16863597 A JP 16863597A JP H1114558 A JPH1114558 A JP H1114558A
Authority
JP
Japan
Prior art keywords
dielectric
surface resistance
resonator
standard
standard resonator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16863597A
Other languages
Japanese (ja)
Other versions
JP3532069B2 (en
Inventor
Akira Nakayama
明 中山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Corp
Original Assignee
Kyocera Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Corp filed Critical Kyocera Corp
Priority to JP16863597A priority Critical patent/JP3532069B2/en
Publication of JPH1114558A publication Critical patent/JPH1114558A/en
Application granted granted Critical
Publication of JP3532069B2 publication Critical patent/JP3532069B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Abstract

PROBLEM TO BE SOLVED: To provide a measuring method, for the surface resistance of a conductor, in which the surface resistance can be measured simply and with high accuracy in a high-frequency region. SOLUTION: A process is installed in such a way that a first dielectric 5a whose height is H and which is composed of a dielectric material is arranged and installed between one pair of conductors 1a, 1b which are arranged and installed at a prescribed interval of H, that a first standard resonator R1 is formed and that a resonance frequency f1 and no-loads Q, Q1 are measured on the basis of a resonance waveform generated by the first standard resonator R1 . A process is installed in such a way that a second dielectric 5b whose height is smaller than H and which is composed of the same material as the first dielectric 5a is arranged and installed between a pair of conductors which are arranged and installed at a prescribed interval of H, that a second standard resonator R2 is formed and that a resonance frequency f2 and no-loads Q, Q2 are measured on the basis of a resonance waveform generated by the second standard resonator R2 . The surface resistance of the conductors 1a, 1b is computed on the basis of the resonance frequencies f1 , f2 and then n-loads Q, Q1 , Q2 which are measured by the first and second standard resonators R1 , R2 .

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、高周波領域におけ
る誘電体材料の誘電特性を評価するために用いられ、高
周波領域における導体の表面抵抗を測定するための方法
に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for evaluating a dielectric property of a dielectric material in a high frequency range and a method for measuring a surface resistance of a conductor in a high frequency range.

【0002】[0002]

【従来の技術】近年、移動体通信の普及、通信の高速化
等に対応するため、ミリ波が注目され、ミリ波領域にお
いて使用できるセラミック等の種々の誘電体材料が盛ん
に開発されている。従って、その誘電体材料を評価する
ため、ミリ波領域において容易にかつ高精度に複素誘電
率(εr=ε’−jε" )(j:虚数単位) を測定する
ための技術の確立が望まれている。
2. Description of the Related Art In recent years, attention has been paid to millimeter waves in order to cope with the spread of mobile communication and speeding up of communications, and various dielectric materials such as ceramics that can be used in the millimeter wave region have been actively developed. . Therefore, in order to evaluate the dielectric material, it is desired to establish a technique for easily and accurately measuring the complex permittivity (εr = ε′−jε ″) (j: imaginary unit) in the millimeter wave region. ing.

【0003】通常、マイクロ波、ミリ波等の高周波領域
で複素誘電率を測定する場合、誘電体材料からなる測定
試料と、一対の金属などの導体により構成された共振器
の共振特性を測定して、複素誘電率を計算する方法が高
精度測定法として使用されている。この方法によって測
定試料の誘電正接tanδ(=ε’’/ε’)を求める
場合、誘電正接の計算には、共振器の一構成要素である
前記導体の表面抵抗値を用いるため、予め導体の表面抵
抗値が測定されている必要がある。
[0003] Usually, when measuring the complex permittivity in a high frequency region such as a microwave or a millimeter wave, the resonance characteristics of a measurement sample made of a dielectric material and a resonator constituted by a pair of conductors such as metals are measured. Therefore, a method of calculating a complex permittivity is used as a high-accuracy measuring method. When the dielectric loss tangent tan δ (= ε ″ / ε ′) of the measurement sample is obtained by this method, the surface resistance of the conductor, which is one component of the resonator, is used for the calculation of the dielectric loss tangent. Surface resistance must be measured.

【0004】また、導体の実際の表面抵抗はその測定周
波数で異なるとともに、導体表面の凹凸の程度によって
も変化する。従って、測定試料の誘電正接を求める前に
は測定周波数における表面抵抗を測定しておく必要があ
る。
[0004] The actual surface resistance of a conductor varies depending on the measurement frequency, and also varies depending on the degree of irregularities on the conductor surface. Therefore, it is necessary to measure the surface resistance at the measurement frequency before obtaining the dielectric loss tangent of the measurement sample.

【0005】ミリ波における表面抵抗の測定技術につい
ては、石川等により、「NRDガイドを用いたミリ波誘
電体材料の複素誘電率測定」(電子情報通信学会論文誌
C−1, Vol. J78−C−I,No.9,pp418
−429,1995年9月)や、石川等による特開平8
−220159号に開示がある。
A technique for measuring surface resistance in millimeter waves is described by Ishikawa et al. In "Measurement of Complex Permittivity of Millimeter-Wave Dielectric Material Using NRD Guide" (Transactions of the Institute of Electronics, Information and Communication Engineers, C-1, Vol. J78-). CI, No. 9, pp418
-429, September 1995) and Japanese Patent Application Laid-Open No.
No. 220159.

【0006】図6は、これらの文献に開示されたミリ波
における表面抵抗測定用の標準共振器の構成を示してい
る。図6において表面抵抗測定用共振器は同じ誘電体材
料から切り出されたリング状の共振器40および円柱状
の共振器41と、柔らかくかつ同じ誘電体材料から切り
出され、共振器40、41を同軸にかつその位置関係を
一定に保ち、共振器40、41と導体板42、43との
接触を妨げるための支持台44、45とを備える。
FIG. 6 shows the configuration of a standard resonator for surface resistance measurement in millimeter waves disclosed in these documents. 6, the surface resistance measuring resonator is cut out of the same dielectric material as a ring-shaped resonator 40 and a columnar resonator 41 cut out of the same dielectric material, and is cut out of a soft and the same dielectric material. And support tables 44 and 45 for keeping the positional relationship constant and preventing contact between the resonators 40 and 41 and the conductor plates 42 and 43.

【0007】共振器40、41は互いに電磁結合し、周
波数fodd において奇モードの共振ピークと、周波数f
evenにおいて偶モードの共振ピークを有する。両モード
の磁界分布の違いのため、導体板42、43の表面にお
いて奇モードの電流密度が偶モードよりも強く、奇モー
ドの導体損が偶モードの導体損よりも大きくなる。従っ
て奇モードの無負荷Q、Qodd が偶モードの無負荷Q、
Qevenより小さくなる。これらのQodd とQevenを測定
して、その差を利用して表面抵抗を計算する。
[0007] The resonators 40 and 41 are electromagnetically coupled to each other to form an odd mode resonance peak at a frequency fodd and a frequency f
Even has an even mode resonance peak. Due to the difference in the magnetic field distribution between the two modes, the current density in the odd mode is stronger than that in the even mode on the surfaces of the conductor plates 42 and 43, and the conductor loss in the odd mode is larger than the conductor loss in the even mode. Therefore, the odd-mode no-load Q, Qodd is the even-mode no-load Q,
Smaller than Qeven. The Qodd and Qeven are measured, and the difference is used to calculate the surface resistance.

【0008】[0008]

【発明が解決しようとする課題】しかしながら、これら
の文献に開示されたミリ波における表面抵抗測定法では
奇モードの導体損と偶モードの導体損の差が小さいた
め、奇モードの無負荷Q、Qodd と偶モードの無負荷
Q、Qevenの差が小さい。従って、表面抵抗の測定精度
が低いという問題がある。
However, in the surface resistance measurement method for millimeter waves disclosed in these documents, since the difference between the odd-mode conductor loss and the even-mode conductor loss is small, the odd-mode no-load Q, The difference between Qodd and the no-load Q and Qeven in the even mode is small. Therefore, there is a problem that the measurement accuracy of the surface resistance is low.

【0009】従って、本発明は上述の技術的課題を解決
し、高精度に表面抵抗を測定できる方法を提供すること
を目的とする。
Therefore, an object of the present invention is to solve the above-mentioned technical problems and to provide a method capable of measuring surface resistance with high accuracy.

【0010】[0010]

【課題を解決するための手段】本発明者は、上記の課題
に対して検討を重ねた結果、所定間隔Hをもって配設さ
れた一対の導体間に、高さHの誘電体材料からなる第1
の誘電体を配設して第1の標準共振器を形成し、該第1
の標準共振器により生成された共振波形を計測して共振
周波数f1 および無負荷Q、Q1 を測定し、また、所定
間隔Hをもって配線された一対の導体間に、高さがHよ
りも小さい前記第1の誘電体と同一材料からなる第2の
誘電体を配設して第2の標準共振器を形成し、該第2の
標準共振器により生成された共振波形を計測して共振周
波数f2 および無負荷Q、Q2 を測定し、前記第1およ
び第2の標準共振器により測定された共振周波数f1
2 および無負荷Q、Q1 、Q2 に基づき、前記導体の
表面抵抗を算出することにより、高い精度で表面抵抗を
測定できることを見いだしたものである。
The inventor of the present invention has studied the above-mentioned problems, and as a result, has found that a pair of conductors disposed at a predetermined distance H are formed of a dielectric material having a height H between the pair of conductors. 1
Are disposed to form a first standard resonator, and the first standard resonator is formed.
The resonance frequency f 1 and the no-load Q, Q 1 are measured by measuring the resonance waveform generated by the standard resonator of the above, and the height between the pair of conductors wired at a predetermined interval H is higher than H A second dielectric made of the same material as the small first dielectric is provided to form a second standard resonator, and resonance is measured by measuring a resonance waveform generated by the second standard resonator. The frequency f 2 and the no-load Q, Q 2 are measured, and the resonance frequency f 1 measured by the first and second standard resonators,
f 2 and unloaded Q, based on Q 1, Q 2, by calculating the surface resistivity of the conductor, in which it has been found that can measure the surface resistivity with high accuracy.

【0011】即ち、本発明の上記方法によれば、導体の
間隔Hと同じ高さを有する第1の誘電体を具備する第1
の標準共振器により生成される共振波形を測定し、ま
た、第1の標準共振器と同じもしくは近接した周波数に
おいて、第1の標準共振器より小さな無負荷Qを有する
ように設計され、第1の標準共振器と同じ複素誘電率を
有する誘電体材料で構成され、導体の間隔Hより小さい
高さを有する第2の誘電体を具備する第2の標準共振器
により生成される共振波形を測定し、その共振波形から
求められる無負荷Qの差を従来法に比較して大きく設定
できるために、その無負荷Qの差に基づき算出される導
体の表面抵抗値の精度を高めることができる。
That is, according to the above method of the present invention, the first dielectric having the first dielectric having the same height as the distance H between the conductors is provided.
The first standard resonator is designed to have a smaller unloaded Q than the first standard resonator at the same or close frequency as the first standard resonator. Measuring a resonance waveform generated by a second standard resonator including a second dielectric having a height smaller than a spacing H between conductors, the second standard resonator being made of a dielectric material having the same complex permittivity as the standard resonator of Since the difference in the no-load Q obtained from the resonance waveform can be set to be larger than that in the conventional method, the accuracy of the surface resistance value of the conductor calculated based on the difference in the no-load Q can be improved.

【0012】[0012]

【発明の実施の形態】図1は本発明の表面抵抗を測定す
るのに用いられる測定治具の一例を説明するための概略
図であり、(a)は、平面図、(b)は、X−X断面図
である。図1によれば、測定治具は、表面抵抗測定用の
一対の円形状の金属からなる導体板1a、1bと、この
導体板1a、1bを着脱自在に、かつ導体板1a,1b
を所定間隔Hをもって平行に支持するための金属からな
る導体板支持部材2a,2bを備えている。そして、導
体板1a,1b間に所定の誘電体を配置して標準共振器
が形成される。
DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 is a schematic view for explaining an example of a measuring jig used to measure the surface resistance according to the present invention, wherein (a) is a plan view and (b) is a plan view. It is XX sectional drawing. According to FIG. 1, the measuring jig comprises a pair of circular metal conductor plates 1a and 1b for measuring surface resistance, and the conductor plates 1a and 1b are detachably attached to the conductor plates 1a and 1b.
Are provided with conductive plate supporting members 2a and 2b made of metal for supporting the members in parallel with a predetermined interval H. Then, a standard dielectric is formed by arranging a predetermined dielectric between the conductor plates 1a and 1b.

【0013】また、導体板支持部材2a、2bの端部に
は、入出力ポート3a、3bが取付られており、入出力
ポート3a、3bには、所定の誘電率を有する誘電体材
料からなる誘電体ストリップ4a,4bが連結されてい
る。導体板1a,1b、導体板支持部2a,2b、入手
力ポート3a,3bはいずれも銅などの金属材料を所定
形状に加工することにより形成される。
Input / output ports 3a, 3b are attached to ends of the conductor plate supporting members 2a, 2b, and the input / output ports 3a, 3b are made of a dielectric material having a predetermined dielectric constant. The dielectric strips 4a and 4b are connected. The conductive plates 1a and 1b, the conductive plate support portions 2a and 2b, and the available ports 3a and 3b are all formed by processing a metal material such as copper into a predetermined shape.

【0014】誘電体ストリップ4a,4bは、ミリ波帯
で低損失な材料、例えば、比誘電率2.0のテフロン
(PTFE)等で形成され、60GHz帯で一般に用い
られる幅2.5mm、高さ2.25mmの形状に形成さ
れている。誘電体ストリップ4a,4bは、上下を金属
からなる導体板1a、1bと、導体板支持部材2a,2
bによって挟持され、その左右を大気により対称に囲ま
れており、このため、誘電体ストリップ4a,4bと導
体板1a,1b、導体板支持部2a,2bによって非放
射性誘電体線路(NRDガイド)が形成される。
The dielectric strips 4a and 4b are formed of a low-loss material in the millimeter wave band, for example, Teflon (PTFE) having a relative dielectric constant of 2.0, and have a width of 2.5 mm and a high width generally used in the 60 GHz band. It is formed in a shape of 2.25 mm in length. The dielectric strips 4a and 4b are composed of conductive plates 1a and 1b made of metal on the top and bottom, and conductive plate support members 2a and 2b.
b, and the right and left sides thereof are symmetrically surrounded by the atmosphere. Therefore, the dielectric strips 4a and 4b, the conductor plates 1a and 1b, and the conductor plate support portions 2a and 2b are used to provide a non-radiative dielectric line (NRD guide). Is formed.

【0015】誘電体ストリップ4a、4bの他端は、導
体板1a,b間に設置される誘電体とにより形成される
標準共振器と、磁界結合されるように、所定の間隔Mを
もって離間した位置にまで延設される。
The other ends of the dielectric strips 4a and 4b are separated from the standard resonator formed by the dielectric provided between the conductor plates 1a and 1b by a predetermined distance M so as to be magnetically coupled. It is extended to the position.

【0016】なお、ミリ波帯の測定系の伝送路には通
常、導波管が使用されるため、入出力ポート3a,3b
は、導波管と非放射性誘電体線路の変換部として機能す
る周知の構造からなる。かかる構造については、特開平
8−70209号、特開平7−140186号等に具体
的に記載されている。
Since a waveguide is usually used for the transmission path of the millimeter wave band measurement system, the input / output ports 3a, 3b
Has a well-known structure that functions as a converter between the waveguide and the non-radiative dielectric line. Such a structure is specifically described in JP-A-8-70209 and JP-A-7-140186.

【0017】本発明によれば、上記の測定治具におい
て、導体板1a、1b間に誘電体5を設置することによ
り、導体板1a、1bおよび誘電体5により共振器が構
成される。
According to the present invention, in the above-mentioned measuring jig, a resonator is constituted by the conductor plates 1a, 1b and the dielectric 5 by disposing the dielectric 5 between the conductor plates 1a, 1b.

【0018】図2は、本発明の測定方法における測定シ
ステムの全体構成の一実施例を示すブロック図である。
図2によれば、シンセサイズドスイーパから出力された
高周波信号は、マイクロ波アンプで増幅され、ミリ波モ
ジュールでミリ波に変換される。ミリ波信号は2つに分
割され、一方は基準用としてネットワークアナライザー
に入力される。他方は、測定治具に入力され、透過した
信号がネットワークアナライザーに入力されるように構
成される。
FIG. 2 is a block diagram showing one embodiment of the entire configuration of the measuring system in the measuring method of the present invention.
According to FIG. 2, the high-frequency signal output from the synthesized sweeper is amplified by the microwave amplifier and converted to the millimeter wave by the millimeter wave module. The millimeter wave signal is split into two, one of which is input to a network analyzer as a reference. The other is configured so that a signal input to a measurement jig and transmitted therethrough is input to a network analyzer.

【0019】また、図3は、本発明における測定治具の
基準透過特性と直接結合特性の一測定例とその結果を示
す図である。
FIG. 3 is a diagram showing one measurement example of the reference transmission characteristics and the direct coupling characteristics of the measuring jig according to the present invention and the results thereof.

【0020】基準透過特性は、図3(a)に示すよう
に、14mmの間隔をもって配置した誘電体ストリップ
4a、4b間に、長さ14mmの誘電体ストリップ4c
を挿入した場合の透過特性である。この基準透過特性を
測定系の基準レベルとする。
As shown in FIG. 3 (a), the reference transmission characteristic is such that a dielectric strip 4c having a length of 14 mm is interposed between dielectric strips 4a and 4b arranged at an interval of 14 mm.
This is the transmission characteristic when "." This reference transmission characteristic is used as a reference level of the measurement system.

【0021】一方、直接結合特性は、図3(b)に示す
ように、誘電体ストリップ4a、4b間になにも実装し
ない状態の透過特性である。図3の結果より、本測定系
においては、56GHz〜63GHzにおいて直接結合
は−50dB程度と小さいことから、この周波数範囲で
標準共振器の共振特性を測定し、それに基づき表面抵抗
を測定できることが分かる。
On the other hand, the direct coupling characteristic is a transmission characteristic in a state where nothing is mounted between the dielectric strips 4a and 4b, as shown in FIG. From the results shown in FIG. 3, in this measurement system, the direct coupling is as small as −50 dB in the range of 56 GHz to 63 GHz, so that the resonance characteristics of the standard resonator can be measured in this frequency range, and the surface resistance can be measured based on the measurement. .

【0022】次に、上記の測定治具を用いた本発明の表
面抵抗の測定方法と、その原理について、図4を用いな
がら説明する。
Next, the method of measuring the surface resistance of the present invention using the above-mentioned measuring jig and its principle will be described with reference to FIG.

【0023】本発明の測定方法は、磁界分布の違いを利
用して、相対的に導体損が小さく、言い換えれば、無負
荷Qが高いTE0m1 モード標準共振器と、このTE0m1
モード標準共振器と同じあるいは近接した共振周波数を
有し、相対的に導体損が大きく、言い換えれば無負荷Q
が小さいTE0md モード標準共振器を設計し、これらの
TE0m1 モード標準共振器とTE0md モード標準共振器
の無負荷Qの測定値の差より導体板の表面抵抗を求める
ものである。モード表示における添字0md、0m1、
0mdにおいてmは、1以上の整数であり、0mdは、
0mδの意である。
The measuring method of the present invention, by utilizing a difference in magnetic field distribution, relatively conductor loss is small, in other words, the unloaded Q is higher TE 0M1 Mode Standard resonator, the TE 0M1
It has the same or close resonance frequency as the mode standard resonator, and has relatively large conductor loss.
Design a small TE 0Md mode Standard resonator, and requests the surface resistance of the conductive plate from the difference between the measured values of the unloaded Q of these TE 0M1 Mode Standard resonator and TE 0Md mode standard resonator. Subscripts 0md, 0m1,
In 0md, m is an integer of 1 or more, and 0md is
It means 0mδ.

【0024】つまり、本発明によれば、図4(a)に示
すように、例えば、アルミナ、サファイアなどの任意の
誘電体材料からなり、導体板1a,1b間の間隔Hと同
じ高さHを有し、半径D1 を有する円柱状の誘電体5a
を導体板1a,1b間に設置することにより、TE0m1
モードの第1の標準共振器R1 を形成する。
That is, according to the present invention, as shown in FIG. 4A, for example, it is made of an arbitrary dielectric material such as alumina or sapphire and has the same height H as the interval H between the conductor plates 1a and 1b. It has a cylindrical dielectric 5a having a radius D 1
Is provided between the conductor plates 1a and 1b, so that TE 0m1
Form a first standard resonator R1 of the mode.

【0025】次に、図4(b)に示すように、前記誘電
体5aと同じ材質からなり、高さが導体板1a、1b間
の間隔Hよりも小さいH’を有する半径D2 の円柱状の
誘電体5bを導体板1a,1b間に設置することによ
り、TE0md モードの第2の標準共振器R2 を形成す
る。
Next, as shown in FIG. 4 (b), a circle having a radius D 2 having the same material as that of the dielectric 5a and having a height H ′ smaller than the interval H between the conductor plates 1a and 1b. by installing a columnar dielectric 5b conductive plates 1a, between 1b, to form a second standard resonator R 2 in TE 0Md mode.

【0026】そして、TE0m1 モードの第1の標準共振
器R1 と、TE0md モードの第2の標準共振器R2 につ
いて、共振波形を計測し、この共振波形から、それぞれ
共振周波数f0m1 、f0md および無負荷Q、Q0m1 、Q
0md を測定する。この時、TE0md モードの第2の標準
共振器による無負荷Q、Q0md は、TE0m1 モードの第
1の標準共振器による無負荷Q、Q0m1 と、Q0md <Q
0m1 の関係にある。また、共振周波数f0m1 、f
0md は、f0m1 ≒f0md となるように、誘電体5bの半
径D2 によって調整される。
[0026] Then, TE 0M1 first standard resonator R 1 mode, TE second for a standard resonator R 2 of 0md mode measures the resonance waveform, from the resonance waveform, respectively resonant frequency f 0M1, f 0md and no-load Q, Q 0m1 , Q
Measure 0md . At this time, the unloaded Q of the second standard resonator TE 0Md mode, Q 0Md is unloaded Q of the first standard resonator TE 0M1 mode, the Q 0m1, Q 0md <Q
0m1 . Also, the resonance frequencies f 0m1 , f
0Md, like a f 0m1 ≒ f 0md, is adjusted by the radius D 2 of the dielectric 5b.

【0027】このようにして、測定された2つの標準共
振器による共振周波数f0m1 、f0m d および無負荷Q、
0m1 、Q0md の差を利用して有限要素法によって導体
板1a、1bの表面抵抗を求めることができる。
[0027] In this way, the resonance caused by the measured two standard resonator frequency f 0m1, f 0m d and unloaded Q,
The surface resistance of the conductor plates 1a and 1b can be obtained by the finite element method using the difference between Q0m1 and Q0md .

【0028】より具体的には、TE0m1 モードの第1標
準共振器R1 とTE0md モードの第2標準共振器R2
共振周波数f0m1 、f0md と無負荷Q、Q0m1 、Q0md
の測定値から、下記数1の(1)(2)式により導体板
1a、1bの共振周波数f0m 1 〜f0md の周波数におけ
る実効導電率σと誘電正接tanδを同時に計算し、数
1の(3)式より導体板1a、1bのf0m1 〜f0md
周波数における表面抵抗Rsを求める。
More specifically [0028], TE 0m1 first standard resonator modes R 1 and TE 0Md second standard resonator R 2 of the resonance frequency f of the mode 0m1, f 0md and unloaded Q, Q 0m1, Q 0md
From the measured values, the number 1 below (1) (2) simultaneously calculates conductive plates 1a, 1b of the resonance frequency f 0 m 1 ~f effective conductivity σ and dielectric loss tangent tanδ at the frequency of 0md by formula, the number 1 The surface resistance Rs of the conductor plates 1a and 1b at the frequencies f 0m1 to f 0md is obtained from the equation (3).

【0029】[0029]

【数1】 (Equation 1)

【0030】ただし、一般にイオン結合性の誘電体材料
において経験則として知られているマイクロ、ミリ波帯
でのf/tanδ=一定則は、近接した周波数f0m1
0m d では正確に成立するので、f0m1 /tanδ0m1
=f0md /tanδ0md となる。又、実効導電率σは、
近接した周波数f0m1 とf0md とではほぼ等しい。
[0030] However, in general f / tan [delta = constant law micro, millimeter wave band, known as an empirical rule in the ion binding of the dielectric material is established exactly at the frequency f 0M1 and f 0 m d close Therefore, f 0m1 / tanδ 0m1
= F 0md / tan δ 0md . The effective conductivity σ is
The frequencies f 0m1 and f 0md are close to each other.

【0031】なお、数1中、μは、導体板1a,1bの
透磁率、ω(=2πf)は角周波数である。また、数1
中の係数A0m1 , A0md とB0m1 , B0md は数2中の
(4)(5)(6)(7)より計算する。
In Equation 1, μ is the magnetic permeability of the conductor plates 1a and 1b, and ω (= 2πf) is the angular frequency. Also, Equation 1
The coefficients A 0m1 , A 0md and B 0m1 , B 0md in the middle are calculated from (4), (5), (6), and (7) in Equation 2.

【0032】[0032]

【数2】 (Equation 2)

【0033】A0m1 ,B0m1 は解析的な積分計算により
求め、A0md ,B0md は軸対称の有限要素法によって計
算した。尚、60GHzのTE021 共振器の解析解との
比較により、有限要素法の共振周波数(f0 )の計算誤
差は0.07%程度、無負荷Q(Qu )の計算誤差は
0.2%程度であることを確認した。これらの計算誤差
は表面抵抗の測定値に影響を与えない値である。
A 0m1 and B 0m1 were obtained by analytical integral calculation, and A 0md and B 0md were calculated by the axisymmetric finite element method. By comparison with the analytical solution of a 60 GHz TE 021 resonator, the calculation error of the resonance frequency (f 0 ) of the finite element method is about 0.07%, and the calculation error of the no-load Q (Q u ) is 0.2 %. These calculation errors are values that do not affect the measured value of the surface resistance.

【0034】[0034]

【実施例】次に、TE0m1 モードの第1標準共振器R1
とTE0md モードの第2標準共振器R2 の共振波形と導
体板1a、1bの表面抵抗の測定結果の一例について説
明する。
Next, a first standard resonator R 1 in the TE 0m1 mode will be described.
And TE second standard resonator R 2 resonant waveform and the conductor plate 1a of 0md mode, an example of measurement results of the surface resistivity of 1b will be described.

【0035】実施例1 まず、誘電体として、円柱端面をc軸と垂直になるよう
に加工された円柱体からなるサファイアを銅からなる導
体板により挟持して、TE0m1 モード第1標準共振器
と、第2標準共振器の共振波形を図5に示した。そし
て、これらの共振波形に基づき、それぞれ共振周波数f
0 、無負荷Q、Quを求め、このデータから導体板の比
導電率σrおよび表面抵抗Rsを求めた。結果は、表1
に示した。ただし、比導電率σrは実効導電率を銅の直
流における導電率5.8×107 (1/Ω・m)で規格
化した値である。
Embodiment 1 First, as a dielectric, a sapphire formed of a cylindrical body whose end face is machined so as to be perpendicular to the c-axis is sandwiched by a conductive plate made of copper, and a TE 0m1 mode first standard resonator is formed. FIG. 5 shows the resonance waveform of the second standard resonator. Then, based on these resonance waveforms, the resonance frequency f
0 , no-load Q and Qu were obtained, and the specific conductivity σr and surface resistance Rs of the conductive plate were obtained from the data. The results are shown in Table 1.
It was shown to. Here, the specific conductivity σr is a value obtained by standardizing the effective conductivity with a conductivity of copper of 5.8 × 10 7 (1 / Ω · m) in direct current.

【0036】なお、表1には、合わせて、用いたサファ
イア誘電体の直径D、高さH、比誘電率ε’、誘電正接
tanδを示した。
Table 1 also shows the diameter D, height H, relative permittivity ε ', and dielectric loss tangent tan δ of the sapphire dielectric used.

【0037】実施例2 次に、誘電体として、サファイアに代えて、アルミナを
用いる以外は、実施例1と全く同様にして比導電率σr
および表面抵抗Rsを求めた。結果は、表1に示した。
なお、表1には、合わせて用いたアルミナ誘電体の直径
D、高さH、比誘電率ε’、誘電正接tanδを示し
た。
Example 2 Next, the specific conductivity σr was exactly the same as in Example 1 except that alumina was used instead of sapphire as the dielectric.
And the surface resistance Rs were determined. The results are shown in Table 1.
Table 1 shows the diameter D, height H, relative dielectric constant ε ′, and dielectric loss tangent tan δ of the alumina dielectric used together.

【0038】[0038]

【表1】 [Table 1]

【0039】表1の結果から明らかなように、サファイ
アで形成された標準共振器と、アルミナで形成された標
準共振器から求められた表面抵抗Rsの値は、誤差の範
囲で一致しており、本発明の表面抵抗の測定方法による
再現性と、誤差が±3.1mΩ以下の高精度の値を得る
ことができた。
As is clear from the results shown in Table 1, the values of the surface resistance Rs obtained from the standard resonator formed of sapphire and the standard resonator formed of alumina agree within an error range. As a result, reproducibility by the method of measuring the surface resistance of the present invention and a highly accurate value with an error of ± 3.1 mΩ or less were obtained.

【0040】[0040]

【発明の効果】以上詳述した通り、本発明の表面抵抗の
測定方法は、共振モードの異なる2つの標準共振器によ
り生成された共振波形から測定される無負荷Qの差から
表面抵抗を測定するので、高い精度で表面抵抗値を求め
ることができる。その結果、この表面抵抗値を用いた、
ミリ波共振器材料などの誘電特性の評価においても精度
の高い測定が可能となる。
As described above in detail, the method for measuring surface resistance according to the present invention measures the surface resistance from the difference between the no-load Q measured from the resonance waveforms generated by two standard resonators having different resonance modes. Therefore, the surface resistance value can be obtained with high accuracy. As a result, using this surface resistance value,
High-precision measurement is also possible in the evaluation of dielectric properties such as millimeter-wave resonator materials.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の一実施例の表面抵抗を測定するための
治具の構成を示す図である。
FIG. 1 is a diagram showing a configuration of a jig for measuring surface resistance according to one embodiment of the present invention.

【図2】本発明における表面抵抗測定システムの全体構
成を示すブロック図である。
FIG. 2 is a block diagram showing an overall configuration of a surface resistance measuring system according to the present invention.

【図3】本発明における測定治具の基準透過特性と直接
結合特性を示す図である。
FIG. 3 is a diagram showing a reference transmission characteristic and a direct coupling characteristic of a measuring jig according to the present invention.

【図4】本発明において用いられる標準共振器の構造を
示す図である。
FIG. 4 is a diagram showing a structure of a standard resonator used in the present invention.

【図5】サファイア製誘電体を用いた標準共振器により
得られた共振波形を示す図であり、(a)がTE021
ード、(b)がTE02d モードの共振器によるものであ
る。
[Figure 5] is a diagram showing the obtained resonance waveform by standard resonator using sapphire dielectric is due to (a) is TE 021 mode, (b) is a TE 02d mode resonator.

【図6】従来の表面抵抗を測定するための標準共振器の
構成を示す図である。
FIG. 6 is a diagram showing a configuration of a conventional standard resonator for measuring surface resistance.

【符号の説明】[Explanation of symbols]

1a,1b 導体板 2a,2b 導体板支持部材 3a,3b 入出力ポート 4a,4b 誘電体ストリップ 5a,5b 誘電体 R1 第1標準共振器 R2 第2標準共振器1a, 1b Conductor plate 2a, 2b Conductor plate support member 3a, 3b Input / output port 4a, 4b Dielectric strip 5a, 5b Dielectric R 1 First standard resonator R 2 Second standard resonator

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】所定間隔Hをもって配設された一対の導体
間に、高さHの誘電体材料からなる第1の誘電体を配設
して第1の標準共振器を形成し、該第1の標準共振器に
より生成された共振波形から共振周波数f1 および無負
荷Q、Q1 を測定する工程と、 所定間隔Hをもって配線された一対の導体間に、高さが
Hよりも小さい前記第1の誘電体と同一材料からなる第
2の誘電体を配設して第2の標準共振器を形成し、該第
2の標準共振器により生成された共振波形から共振周波
数f2 および無負荷Q、Q2 を測定する工程と、 前記第1および第2の標準共振器により測定された共振
周波数f1 、f2 および無負荷Q、Q1 、Q2 に基づ
き、前記導体の表面抵抗を算出することを特徴とする表
面抵抗の測定方法。
1. A first standard resonator is formed by disposing a first dielectric made of a dielectric material having a height H between a pair of conductors disposed at a predetermined interval H, and forming a first standard resonator. Measuring the resonance frequency f 1 and the no-load Q, Q 1 from the resonance waveform generated by the standard resonator of claim 1; A second dielectric made of the same material as the first dielectric is provided to form a second standard resonator, and a resonance frequency f 2 and a resonance frequency f 2 are obtained from a resonance waveform generated by the second standard resonator. load Q, a step of measuring the Q 2, the first and second resonant frequencies f 1, which is measured by a standard resonator, f 2 and unloaded Q, based on Q 1, Q 2, the surface resistance of the conductor Calculating the surface resistance.
JP16863597A 1997-06-25 1997-06-25 How to measure surface resistance Expired - Lifetime JP3532069B2 (en)

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