JPH11142252A - Measuring apparatus for sampled waveform using optical sampler module - Google Patents

Abstract

PROBLEM TO BE SOLVED: To obtain a waveform measuring apparatus whose resolution is high and whose band is wide by a method wherein a signal at a prescribed frequency in a modulator output decided by a reference signal is extracted so as to be amplified by a lock-in amplifier. SOLUTION: A trigger signal fTR which is input to a down counter 1704 is converted into a signal Δf2 at a frequency whose repetitive frequency is lower than that of the trigger signal fTR, it is input to a pulse generator 1705, and second sampling pulses are generated. By using the second sampling pulses, a sampler module 1701 samples a measuring signal which is passed through a low-pass filter. Then, a noise is removed by using a lock-in amplifier 1703, and only a signal to be measured is amplified. The measuring signal which is converted into a signal Δf3 by the sampler module 1701 is modulated by a modulator 1702 to be square waves which are synchronized with a reference signal generated by a reference-signal generator 1702, it is input to the lock-in amplifier 1703, and only the measuring signal which can be phase-detected by using the reference signal can be taken out.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to the use of an optical sampler module, for example, from an optical pulse having an optical pulse width of 1 ps (picosecond = ^10-12 seconds) or less to several ns (nanosecond = ^10-9). Sampling waveform measuring device that measures the time waveform of an optical pulse that continuously oscillates (seconds) or the time waveform of an impulse response optical pulse of a device under test that receives the optical pulse at a high resolution of, for example, 1 ps or less at high speed. More particularly, the present invention relates to a sampling waveform measuring device having a wide measurement band.

[0002]

2. Description of the Related Art Conventionally, a measurement method using a sampling oscilloscope is generally used for measuring a high-speed pulse signal. However, it is difficult to measure a pulse waveform on the order of picoseconds because a sampling oscilloscope electrically performs sampling. .

As a conventional pulse waveform measuring apparatus of the order of picoseconds, detecting means comprising a photoconductive element (photoconductor) having a coplanar line formed on a semiconductor substrate and two pairs of electrodes formed on the coplanar line. And an optical pulse to be measured (or an impulse response optical pulse of the device to be measured that inputs and outputs the optical pulse) is applied to one electrode (hereinafter, referred to as a “first electrode”) formed on a coplanar line of the detecting means. To operate as a detector that performs photoelectric conversion by irradiating the other electrode of the coplanar line (hereinafter referred to as “second electrode”).
) Irradiates an optical probe pulse while changing the delay time, performs sampling, detects a cross-correlation waveform y (t) between the optical pulse to be measured and the optical probe pulse from the output end of the coplanar line, and decompresses the detection signal. There are some that return to the original waveform after the volume is displayed.

In the optical pulse measuring device having such a configuration,
The measured light pulse (or the impulse response light pulse of the measured device that inputs and outputs the light pulse) has a function x
The light is irradiated to the first electrode of the coplanar line of the detection means as (t). Then, the optical probe pulse is applied to the second electrode of the detection means while giving a delay time τ through the delay means, and the photoelectrically converted electric pulse signal x (t) input from the first electrode of the coplanar line is converted into: Sampling is performed using the function h (t + τ) of the optical probe pulse. Then, the output signal y (t) from the detection means becomes x (t) and h (t +
τ).

That is, the detection signal y (t) from the coplanar line of the detection means is:

[0006]

(Equation 1)

[0007] However, the integral is from -∞ to + ∞
Up to. When this detection signal y (t) is deconvolved by the arithmetic means, the original waveform is restored.
This restored waveform is displayed on the display means. FIG. 9 shows an example of the configuration of a conventional optical pulse measurement device.

[0008] In FIG. 9, the schematic configuration of the optical pulse measuring device includes a light source 510 to be measured, a detecting means 511, an amplifier (lock-in amplifier) 514, an A / D converting means 515, a calculating means 516, a display means 517, a mode lock. It comprises a laser oscillator 521 and a delay circuit 525.

The arithmetic means 516 includes a light source 510 to be measured, a mode-locked laser oscillator 521, and a stage driver 52.
7 and the A / D conversion means 515 for driving. The timing signal may be synchronized with the measurement system using a specific signal as a reference from a unit other than the arithmetic unit 516, but here, the timing signal is transmitted from the arithmetic unit 516, for example, a computer. In addition, the arithmetic unit 516 receives an A / D-converted detection signal from a detection unit 511 described later as an input, and performs a deconvolution operation on the input detection signal.

The measured light source 510 generates a measured optical pulse 540 for each timing signal in synchronization with a mode-locked laser oscillator 521 that generates an optical probe pulse. The measured light pulse 540 or, though not shown, an impulse response light pulse of the measured element which inputs and outputs the measured light pulse 540 is condensed by a lens 529a.
The first electrode 513a of the detection means 511 is irradiated.

The mode-locked laser oscillator 521 includes a synchronization circuit 522, a main laser 523, and an excitation laser 524.
Light source 510 to be measured by a timing signal.
The optical probe pulse 542 is generated in synchronization with The pulse width of the optical probe pulse 542 is, for example, 80 fs (80
(Femtosecond = 80 × 10 ⁻¹⁵ seconds) and the repetition frequency is about 100 MHz. The optical probe pulse 542 from the mode-locked laser oscillator 521 is
8a and 528b, movable mirror 526 of delay circuit 525
Is reached, reflected by the movable mirror 526, and reflected by the mirror 528c to 9
The light is reflected by 0 degrees, is collected by the lens 529b, and is
The first second electrode 513 is irradiated.

The delay means 525 gives a delay time τ to the optical probe pulse 542 from the mode-locked laser oscillator 521, and has a movable mirror 526 and a stage driver 527. The movable mirror 526 can be moved back and forth with respect to the traveling direction of the light by driving the stage driver 527, thereby giving a delay time τ to the optical probe pulse 542. The stage driver 527 drives the movable mirror 526 stepwise or continuously in response to the timing signal from the calculating means 516. The movement of the movable mirror by 1 μm gives a delay of 6.6 fs to the optical probe pulse 542 in both directions. That is, since the high speed is 3 × 10 ⁸ m / s, (2 × 1
0 ⁻⁶ m) / (3 × 10 ⁸ m / s) = 6.6 fs.

The detecting means 511 includes, for example, a coplanar line 512 of a conductive thin film and an ultrafine gap between the coplanar line 512 on an InP (indium phosphorus) substrate doped with Fe (iron) which is a semi-insulating substrate. And a photoconductive element formed by forming two pairs of electrodes. A DC power supply is connected to one end of the coplanar line 512, and an electric field is applied to the first electrode. The first electrode 513a and the second electrode 513b are counter electrodes (more preferably, comb-shaped counter electrodes), and each electrode has a gap width of several μm or less. The gap width of this electrode can be 1 μm or less.
With this configuration, the measured light pulse 5 is applied to the first electrode 513a.
40 and the second electrode 513b, the delayed optical probe pulse 542 can be photoelectrically converted with high sensitivity, and the measured optical pulse 540 can be sampled while shifting the time little by little. The detection signal sampled by this detection means 511 is
4. The data is input to the arithmetic unit 516 via the A / D converter 515.

The display means 517 displays the result of the deconvolution calculation performed by the calculation means 516.

In the optical pulse measuring apparatus configured as described above, the optical probe pulse from the light source 510 to be measured is photoelectrically converted by the first electrode 513a of the detecting means 511,
The photoelectrically converted pulse signal is sampled at the second electrode 513b by the optical probe pulse 542 from the mode-locked laser oscillator 521. The sampled detection signal is the cross-correlation waveform y (t) as described above, and the original waveform is obtained by deconvolving the cross-correlation waveform y (t).

The sampled detection signal is supplied to an amplifier 5
After being amplified at 14 and subjected to A / D conversion by the A / D conversion means 515, it is input to the calculation means 516 to perform deconvolution calculation. Then, the calculation result is displayed on the display unit 517.

In this optical pulse measuring apparatus, every time the movable mirror moves by 1 μm, the delayed optical probe pulse 542 is
, The resolution becomes 6.6 fs. Then, for example, assuming that the entire moving section is 5 cm, 333
ps delay, and the measured pulse is 6.6.
Waveforms in the 333 ps section can be measured with a resolution of fs.

Further, in Japanese Patent Application No. 148331/1995, a sampling switch provided with a lock-in amplifier for integrating and amplifying a sampling detection signal of a sampling photoconductor in which a gap laser beam is irradiated on a gap electrode by a gain switch method. Waveform measuring devices have been proposed.

[0019]

Among the above-mentioned prior arts, there is a problem that it is difficult to measure a pulse waveform of about picosecond by a sampling oscilloscope.

In the device shown in FIG. 9 and the device proposed in Japanese Patent Application No. 148331 in 1995, since the lock-in amplifier is used, the frequency band of the entire device is limited by the lock-in amplifier. There is a problem that the device becomes a narrow band device.

The present invention has been made in view of the above-mentioned problems of the conventional technology, and has as its object to realize a wideband sampling waveform measuring apparatus.

[0022]

According to the present invention, there is provided a sampling waveform measuring apparatus using an optical sampler module according to the present invention, comprising: a first electrode on which photoelectric conversion is performed; and an electric signal obtained by photoelectric conversion on the first electrode. And a second electrode that is sampled in response to the irradiated light pulse, and a light pulse to be measured is irradiated to the first electrode of the photoconductor, and the supplied sampling pulse is used as a reference. Sampling waveform measurement for sampling and measuring an optical pulse to be measured using an optical sampler module for irradiating a second electrode of the photoconductor with an optical probe pulse having a probe-shaped waveform and sampling the optical pulse to be measured An apparatus, comprising: a divider for bisecting a trigger signal synchronized with the optical pulse to be measured; and a divider bisected by the divider. Enter the trigger signal, a PLL circuit for generating a specific repetition frequency based on the trigger signal,
An optical pulse generating means for generating an optical pulse applied to a second electrode of the optical sampler module in accordance with an output of the PLL circuit; and a low-pass filter for integrating a waveform sampled by the optical sampler module. Receiving the trigger signal divided by the distributor, downconverting the signal to a specific repetition frequency, generating a short pulse from the output of the downconverter, and outputting the low-pass filter output to the pulse generator. An electrical sampler module for sampling with the generated short pulse, a reference signal generator for generating a reference signal, a modulator for modulating a sampling result in the electrical sampler module with the reference signal, and the reference Enter the signal and the modulator output, and having a lock-in amplifier for amplifying and extracting a predetermined frequency of the signal in the modulator output to be determined by the reference signal.

In this case, the sampler module comprises:
The photoconductor, a laser diode, a driving unit for driving the laser diode based on a sampling pulse, a fiber for guiding the light pulse to be measured from the outside, and a light pulse to be measured emitted from the fiber to the photoconductor. A first lens for condensing light on the first electrode and a second lens for condensing an optical probe pulse emitted from the laser diode on a second electrode of the photoconductor, respectively, in a metal container. It may be arranged.

Further, the laser diode may be a surface emitting laser diode, and a substrate on which the surface emitting laser diode is formed may be fixed on a substrate of the photoconductor.

Further, the photoconductor forms a first coplanar line and a second coplanar line branched from the first coplanar line on a semi-insulating substrate, and the first and second coplanar lines are formed. May be formed by forming first and second electrodes each having a narrow gap.

[Operation] In the present invention configured as described above, the signal extraction processing in the lock-in amplifier is performed on a signal obtained by down-converting and sampling the trigger signal, and the apparent frequency is reduced. This is performed on the signal, and the band of the device is widened.

[0027]

Next, an embodiment of the present invention will be described with reference to the drawings.

FIG. 1 is a block diagram showing a configuration of one embodiment of the present invention, and FIG. 2 is a block diagram showing a wide band lock-in amplifier 107 in FIG.
FIG. 3 is a diagram showing the wideband lock-in amplifier 107 in the embodiment shown in FIG. 1 using the block diagram shown in FIG.

In this embodiment, the light source to be measured 101, the distributor 1
02, a PLL (Phase Locked Loop) circuit 103, a laser diode (LD) drive circuit 104, an optical sampler module 105, a low-pass filter 106, and a broadband lock-in amplifier 107. Of these, the light source 101 to be measured is excluded (within the broken line in FIG. 1).
The components constitute the sampling waveform measuring device.

As shown in FIGS. 2 and 3, the wideband lock-in amplifier 107 includes a sampler module 1701,
It comprises a modulator 1702, a lock-in amplifier 1703, a down converter 1704, a pulse generator 1705, and a reference signal generator 1706.

FIGS. 4A and 4B are diagrams showing a schematic configuration of the optical sampler module 105 shown in FIG. 1, wherein FIG. 4A is a top view and FIG. 4B is a side view.

First, the optical sampler module 105
Will be described.

In FIG. 4, reference numeral 1 denotes a metal container, in which a base 2 is provided via a Peltier cooler 3, and a photoconductor 4 is attached to the base 2.

In the photoconductor 4, a coplanar line 30 having a first electrode (narrow gap) 32 formed on a semi-insulating substrate is formed, and further branched from the coplanar line 30 in a direction substantially perpendicular to that direction. Coplanar line 3 on which second electrode (narrow gap) 33 is formed
1 is formed. As the photoconductor 4, the electrode portion may be constituted by a comb-shaped counter electrode 502 formed on a coplanar line 501 as shown in FIG.

On the base 2, a laser diode (LD) 7 and a bias substrate 8 and an LD driver 9 for driving the laser diode 7 are provided.
The optical probe pulse emitted from the LD 7 is
The second electrode 33 of the photoconductor 4 is provided so as to be irradiated via the second electrode b. Further, the optical fiber 6 is introduced into the metal container 1 from the outside, and the light pulse to be measured emitted from the ferrule 6a of the optical fiber 6 is applied to the first electrode 32 of the photoconductor 4 via the lens 5a.
It is arranged so that it is irradiated to. Here, an LD driver 9 is used as a driving device of the sampling light source,
An optical probe pulse is obtained by generating a short optical pulse by a method such as a gain switch method. The optical fiber 6 is connected to a light source 10 to be measured such as an optical soliton through an optical connector.
1 are combined.

The metal container 1 has a DC input terminal 21, a sampling signal output terminal 22, an LD drive signal input terminal 2
3. A termination terminal 24 is provided. The DC input terminal 21 is connected to the coplanar line 3 of the photoconductor 4.
0 is electrically connected to one end of the DC input terminal 2
1 can be applied with a bias voltage. The sampling signal output terminal 22 is electrically connected to the output terminal of the coplanar line 31 of the photoconductor 4, and the sampling signal detected by the photoconductor 4 is output from the sampling signal output terminal 22. Terminating terminal 24 is coplanar line 30
Is electrically connected to the other end. The LD drive signal input terminal 23 is electrically connected to the LD driver 9 and
The configuration is such that the LD drive signal is input to the LD driver 9 via the D drive signal input terminal 23.

In the optical sampler module 105 configured as described above, the measured light pulse irradiated on the first electrode 32 is photoelectrically converted, and based on the optical probe pulse irradiated on the second electrode 33, the photoelectric conversion is performed. The converted light pulse to be measured is sampled while shifting the time little by little.

Next, the configuration and operation of this embodiment will be described based on actual operations.

Light emitted from the light source 101 to be measured is incident on the optical sampler module 105 as light to be measured, and a trigger signal f _TR synchronized with the emitted light is incident on the distributor 102. The trigger signal f _TR is, of course, a signal having the same repetition frequency as the light to be measured and subjected to phase lock.

The trigger signal f _TR is bisected by the distributor 102, one of which is input to the PLL circuit 103, and the other is input to the down converter 1704.

The trigger signal f _TR input to the PLL circuit 103 changes the refresh frequency of the PLL circuit 103 by Δf.
When a _1, is converted into a signal of repetition frequency to be filled with _{f LD = f TR / n-} Δf 1. The converted repetition frequency signal is supplied to the LD drive circuit 104.

The LD drive circuit 104 includes the LD driver 9 and the LD driver 9.
And an optical pulse generating means together with the LD 7.
Input repetition frequency f_LDBy optical sampler
LD7 in the module 105 via the LD driver 9
Drive, and thereby a short light pulse (first sampling pulse)
Lus) occurs. Optical sampler module 105
Then, the light emitted from the light source 101 to be measured is
Sampling, sampling result is low-pass filter
106, the repetition frequency becomes n × Δf ₁Conversion to
The measured signal appears. At this time, the optical sampler
Time interval of waveform sampled by module 105
Δt₁And the time interval Δt in the measurement signal
The relationship holds.

Δt = (n × Δf ₁ / f _TR ) × Δt ₁ ∵Δt: Δt ₁ = 1 / f _TR : 1 / (n × Δf ₁ ) (1) On the other hand, a trigger input to the down converter 1704 The signal f _TR is converted from the repetition frequency f _TR to Δf ₂ having a lower frequency than f _TR , and the pulse generator 1705
Is input to In the pulse generator 1705, a repetition frequency favorable Δf ₂ (where Δ
f ₁ > | Δf ₁ −Δf ₂ |). Electrical sampler module 1701
Means that the repetition frequency passed through the low-pass filter 106 by the second sampling pulse is n ×
The measurement signal converted to Δf ₁ is sampled. As a result, the repetition frequency becomes Δf ₂ ′ = | Δf ₁ −Δf ₂ |
= Δf ₃ appears. At this time, the following relationship is established between the time interval Δt ₁ sampled by the optical sampler module 105 and the time interval Δt _{2 of the} waveform sampled by the sampler module 1701.

Δt ₁ = (Δf ₂ ′ / f ₁ ) × Δt ₂ ∵Δt ₁ : Δt ₂ = 1 / f ₁ : 1 / Δf ₂ ′ (2) Using (1) and (2), Δt = (N × Δf ₁ / f _TR ) × Δt ₁ = (n × Δf ₁ ) / f _TR × (Δf ₂ ′ / Δf ₁ ) × Δt ₂ = (n × Δf ₂ ′) / f _TR × Δt ₂ ... (3)

Since the signal measured here is so small that it is buried in noise, the lock-in amplifier 1706
Use to remove noise and amplify only the signal you want to measure.

The measurement signal whose repetition frequency has been converted to Δf ₃ by the sampler module 1701 is
702, a square wave synchronized with the reference signal generated by the reference signal generator 1702 (repetition frequency: f
_REF , duty: 50 square wave). The modulated signal is input to the lock-in amplifier 1706 and a reference signal (repetition frequency: f _REF , duty: 5
By performing phase detection using a square wave (0), only the measurement signal is extracted.

Here, an actually measurable frequency band B
(F) can be expressed as follows from equation (3), where B (f ₂ ) is the measurement frequency band of lock-in amplifier 1706.

B (f) = f _REF / (n × Δf ₂ ′) × B (f ₂ ) (4) The reference frequency f _REF inputted to the lock-in amplifier 1706 must be smaller than B (f ₂ ). Must.
Further, among the signals input to the lock-in amplifier 1706, a frequency band of the slowly changing signal components is required to be less than 1/10 of f _REF. This is f _REF
This is because it is expected that the measurement result will lose reliability at a frequency value of 1/10 or more. Therefore, the upper limit frequency band U for measurement in the measurement system of the present embodiment due to the finite band of the lock-in amplifier 1703
U = f _REF / (n × Δf ₂ ) × (f _REF / 10) (5)

The upper limit frequency band U ′ for measurement in the measurement system in the case of a normal lock-in amplifier not using a down converter is: U ′ = f _REF / (n × Δf ₁ ) × (f _REF / 10) (6) ). Since Δf ₁ > | Δf ₁ −Δf ₂ |, in the measurement system of the present embodiment, the bandwidth is increased by Δf ₁ / Δf ₂ times.

In the optical sampler module 105 of the present embodiment described above, the laser diode 7 is provided separately from the photoconductor substrate. However, the laser diode 7 is formed on the substrate, It can be fixed on a conductor substrate to make it monolithic. The configuration of the LD chip using a surface-emitting type chip will be described below as an example.

FIG. 6 is a diagram showing an electrode shape of a surface emitting LD chip. In the figure, 200 is a p-type electrode, 20
1 is an n-type electrode, 202 is a light emitting surface, and 203 is a drive electrode. Here, the p-type electrode 200 is a ground plane, and the p-type electrode 200 has bump pads 204 a to 204 a.
4f is formed. In this surface emitting LD, light is emitted from the light emitting surface 202 in a direction perpendicular to the substrate surface.

In the above-mentioned surface emitting LD chip, light is emitted in a direction perpendicular to the substrate. Therefore, when a flip chip is mounted as described later, light is applied to the photoconductor without bending the optical path with a prism or a mirror. it can. In addition, since light is emitted from the surface, the emission angle is narrow, and optical coupling can be performed without passing through a lens. Since the resonator length is shorter than that of a normal Fabry-Perot type LD, it is easy to generate a short optical pulse required for sampling.

FIG. 7 shows a state in which the above-mentioned surface emitting LD is fixed on a photoconductor substrate. In the figure, reference numeral 300 denotes a photoconductor, and 400 denotes a surface emitting LD chip shown in FIG.

In the photoconductor 300, a transmission line 302 having one end as a transmission line input end 302a and the other end as a transmission line end 302b is formed on a semi-insulating substrate. A transmission line 303 serving as a sampling port 304 is formed. The transmission line 302 has a comb-shaped electrode portion 305a (which may be a counter electrode).
03 has a comb-shaped electrode portion 305b (which may be a counter electrode). Further, an LD drive electrode 306 for driving the surface emitting LD chip 400 is formed on the semi-insulating substrate, and an LD drive bump pad 306a is formed at an end thereof. A ground surface 307 is formed on other portions except for the transmission lines 302 and 303 and the LD drive electrode 306, and the ground surface 307 has a ground bump pad 308.
a to 308f are formed.

The ground bump pads 308 a to 308 f on the ground surface 307 of the photoconductor 300 are respectively connected to the bump pads 2 of the surface emitting LD chip 400.
04a to 204f are fixed by solder bumps. Further, the LD drive bump pad 306a of the photoconductor 300 and the drive electrode 203 of the surface emitting LD chip 400 are fixed by the bump pad. Electrical connection is established by the fixation by the bump pads, and the surface emitting LD chip 400 can be driven. The light emitting surface 202 of the surface emitting LD chip 400 is arranged on the comb electrode portion 305b of the photoconductor 300. When the surface emitting LD chip 400 is driven, the light emitted from the light emitting surface 202 emits the comb electrode. Part 30
5 is illuminated.

In the above-described configuration, the distance between the photoconductor 300 and the surface emitting LD chip 400 can be reduced to about 50 μm due to the characteristics of the solder bumps, so that a condensing lens is not required. Also, the photoconductor 300
Since the alignment between the surface emitting LD chip 400 and the surface emitting LD chip 400 is performed by the self-alignment effect of the solder bump, the alignment is automatically performed at an optimum position with a high accuracy of ± 1 μm of the pad pattern forming accuracy.

Note that the surface emitting type LD chip is used as the LD chip.
Other than those, normal Fabry-Perot type, DFB tie
And a DBR type can also be used. these
In an LD chip such as that described above, light is emitted along the in-plane direction of the substrate.
Will be issued. When such an LD chip is used,
As shown in Fig. 8, Fabry-Perot on the photoconductor
Type, DFB type, DBR type etc. LD chips
Formed and then SiO _TwoWaveguides and mirrors
Form. The mirror is one of the comb electrodes of the photoconductor
LD chip that is installed on the part (sampling side)
Light emitted from the mirror is guided to this mirror through the waveguide
It is configured as follows. With this configuration
Light emitted from the LD chip passes through the waveguide
Guided onto the comb-shaped electrode of the
The light is reflected and applied to the comb-shaped electrode portion.

[0058]

Since the present invention is configured as described above, it has the following effects.

There is an effect that a wideband sampling waveform measuring apparatus capable of measuring a pulse waveform of about picosecond can be obtained.

[Brief description of the drawings]

FIG. 1 is a block diagram showing the configuration of an embodiment of the present invention.

FIG. 2 is a block diagram showing a configuration of a wideband lock-in amplifier 107 in FIG.

FIG. 3 is a diagram showing the wideband lock-in amplifier 107 in the embodiment shown in FIG. 1 using the block diagram shown in FIG. 2;

FIGS. 4A and 4B are configuration diagrams schematically showing the optical sampler module 105 in FIG. 1, wherein FIG.
(B) is the figure seen from the side.

FIG. 5 is a diagram showing an example of an electrode shape of the photoconductor 4.

FIG. 6 is a diagram showing an electrode shape of a surface emitting LD chip.

7A and 7B are diagrams showing a state in which the surface emitting LD chip shown in FIG. 5 is fixed on a photoconductor substrate, wherein FIG. 7A is a diagram viewed from the top side, and FIG.

FIG. 8 is a diagram showing a configuration when a Fabry-Perot type LD chip is fixed on a photoconductor.

FIG. 9 is a diagram showing a configuration of a conventional example.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Metal container 2 Base 3 Peltier cooler 4 Photoconductor 5a, 5b Lens 6 Optical fiber 6a Ferrule 7 LD 8 Bias substrate 9 LD driver 101 Light source to be measured 102 Distributor 103 PLL circuit 104 LD drive circuit 105 Optical sampler module 106 Low pass filter 107 Wideband lock-in amplifier 1701 Sampler module 1702 Modulator 1703 Lock-in amplifier 1704 Down converter 1705 Pulse generator 1706 Reference signal generator

Claims (4)

[Claims] A first electrode on which photoelectric conversion is performed and the first electrode;
And a second electrode that is sampled in response to the irradiated optical pulse with an electric signal obtained by photoelectric conversion at the electrode of the photoconductor. An optical sampler module for irradiating an electrode and irradiating a second electrode of the photoconductor with an optical probe pulse having a probe-like waveform generated based on the supplied sampling pulse to sample a light pulse to be measured is used. A sampling waveform measuring apparatus for sampling and measuring an optical pulse to be measured, wherein the distributor divides a trigger signal synchronized with the optical pulse to be measured into two, and receives the trigger signal bisected by the distributor and receives the trigger signal. That generates a specific repetition frequency based on
An L circuit; an optical pulse generating means for generating an optical pulse applied to a second electrode of the optical sampler module in accordance with an output of the PLL circuit; and a waveform sampled by the optical sampler module integrated. A low-pass filter that inputs the trigger signal bisected by the distributor, down-converts the down-converted to a specific repetition frequency, a pulse generator that generates a short pulse from the output of the down-converter, and the low-pass filter output. An electrical sampler module that samples with a short pulse generated by the pulse generator, a reference signal generator that generates a reference signal, and a modulator that modulates a sampling result of the electrical sampler module with the reference signal, Inputting the reference signal and the modulator output,
A lock-in amplifier that extracts and amplifies a signal of a predetermined frequency in the output of the modulator determined by the reference signal and amplifies the signal. A sampling waveform measuring apparatus using an optical sampler module. 2. The sampling waveform measuring apparatus using the optical sampler module according to claim 1, wherein the sampler module is configured to drive the laser diode based on the photoconductor, a laser diode, and a sampling pulse. Means, a fiber for guiding the measured light pulse from the outside, a first lens for condensing the measured light pulse emitted from the fiber on a first electrode of the photoconductor, and emitted from the laser diode. A second optical probe that focuses the reflected optical probe pulse on a second electrode of the photoconductor.
A sampling waveform measuring device using an optical sampler module, wherein the lens is disposed in a metal container. 3. The sampling waveform measuring apparatus using the optical sampler module according to claim 2, wherein the laser diode is a surface emitting laser diode, and the substrate on which the surface emitting laser diode is formed is the photo diode. A sampling waveform measuring device using an optical sampler module fixed on a substrate of a conductor. 4. The sampling waveform measuring apparatus using the optical sampler module according to claim 1, wherein the photoconductor is branched from the first coplanar line and the first coplanar line on a semi-insulating substrate. A second coplanar line, and first and second electrodes each having a narrow gap formed on the first and second coplanar lines, respectively. Sampling using an optical sampler module. Waveform measuring device.