JPH11135892A - Semiconductor laser device - Google Patents
Semiconductor laser deviceInfo
- Publication number
- JPH11135892A JPH11135892A JP31423197A JP31423197A JPH11135892A JP H11135892 A JPH11135892 A JP H11135892A JP 31423197 A JP31423197 A JP 31423197A JP 31423197 A JP31423197 A JP 31423197A JP H11135892 A JPH11135892 A JP H11135892A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor laser
- algaas
- laser element
- brazing material
- laser device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 90
- 238000005219 brazing Methods 0.000 claims abstract description 30
- 239000000463 material Substances 0.000 claims abstract description 30
- 239000002184 metal Substances 0.000 claims description 28
- 229910052751 metal Inorganic materials 0.000 claims description 28
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 abstract description 42
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract description 37
- 239000000758 substrate Substances 0.000 abstract description 19
- 239000013078 crystal Substances 0.000 description 8
- 238000005253 cladding Methods 0.000 description 7
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 5
- 239000011324 bead Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000003825 pressing Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000005275 alloying Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 238000003786 synthesis reaction Methods 0.000 description 2
- 238000005979 thermal decomposition reaction Methods 0.000 description 2
- 241001391944 Commicarpus scandens Species 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01004—Beryllium [Be]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01015—Phosphorus [P]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/1015—Shape
- H01L2924/10155—Shape being other than a cuboid
- H01L2924/10158—Shape being other than a cuboid at the passive surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/1026—Compound semiconductors
- H01L2924/1032—III-V
- H01L2924/10329—Gallium arsenide [GaAs]
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Lasers (AREA)
- Die Bonding (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、半導体レ−ザ素子
に関し、特に、この半導体レ−ザ素子を放熱体上に固着
させた半導体レ−ザ装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor laser device, and more particularly, to a semiconductor laser device having the semiconductor laser device fixed on a heat radiator.
【０００２】[0002]
【従来の技術】通常、半導体レ−ザ素子は、この半導体
レ−ザ素子から発生する熱を効率良く外部へ放出するた
めに金属ろう材を介して、放熱性の良好な放熱体上に固
着される。2. Description of the Related Art Normally, a semiconductor laser device is fixed on a heat radiator having good heat radiation properties through a metal brazing material in order to efficiently release the heat generated from the semiconductor laser device to the outside. Is done.
【０００３】図３は、従来の半導体レ−ザ素子１０１を
放熱体１０３上に固着した半導体レ−ザ装置１００の断
面図である。この半導体レ−ザ装置１００は、半導体レ
−ザ素子１０１を金属ろう材１０２を介して放熱体１０
３上に固着した構造である。この半導体レ−ザ素子１０
１の放熱体１０３上への固着は、放熱体１０３上に金属
ろう材１０２を付着させ、この半導体レ−ザ素子１０１
を放熱材１０３に対向配置し、この半導体レ−ザ素子１
０１を金属ろう材１０２に載置した後、この半導体レ−
ザ素子１０１を加圧すると同時に加熱して、この金属ろ
う材１０２と、半導体レ−ザ素子１０１及び放熱体１０
３との間の合金化反応により行う。しかし、通常、金属
ろう材１０２は空気中に置かれて保管されているため、
この表面には酸化被膜１０４が生ずる。一般的に、この
ような金属ろう材１０２は、通常、その表面に酸化被膜
が形成されているが、この金属ろう材１０２と対向する
半導体レ−ザ素子１０１面は平担であり、この金属ろう
材１０２と半導体レ−ザ素子１０１間の面接触性が良い
ため、上記のような加圧方法では、酸化被膜１０４が破
られにくく、合金化反応が均一に行われにくいという問
題がある。また、酸化被膜１０４は、熱伝導度が悪いの
で、半導体レ−ザ素子１０１から発生する熱は、金属ろ
う材１０２を介して効率良く放熱体１０３に伝達されに
くく、従って、放熱体１０３から外部への熱放出が効率
良く行われなくなってしまう。FIG. 3 is a cross-sectional view of a semiconductor laser device 100 in which a conventional semiconductor laser element 101 is fixed on a heat radiator 103. In this semiconductor laser device 100, a semiconductor laser element 101 is radiated by a heat radiator 10 through a brazing metal 102.
3 is a structure fixed to the upper surface. This semiconductor laser device 10
In order to fix the semiconductor laser element 101 on the heat radiator 103, a metal brazing material 102 is adhered on the heat radiator 103.
Is disposed to face the heat radiating member 103, and the semiconductor laser element 1
01 is placed on the brazing metal 102, and the semiconductor laser
When the laser element 101 is pressurized and heated at the same time, the metal brazing material 102, the semiconductor laser element 101 and the radiator 10 are heated.
3 is carried out by an alloying reaction. However, since the brazing filler metal 102 is usually stored in the air,
An oxide film 104 is formed on this surface. Generally, such a metal brazing material 102 has an oxide film formed on the surface thereof, but the surface of the semiconductor laser element 101 facing the metal brazing material 102 is flat, and Since the surface contact between the brazing material 102 and the semiconductor laser element 101 is good, there is a problem that the oxide film 104 is not easily broken by the above-described pressing method, and the alloying reaction is not easily performed uniformly. Further, since the oxide film 104 has poor thermal conductivity, heat generated from the semiconductor laser element 101 is not easily transmitted to the heat radiator 103 through the metal brazing material 102 efficiently. The heat is not efficiently released to the air.
【０００４】そこで、この問題を解決するために実開平
３−４１９５９に示すように、半導体レ−ザ素子をＣｕ
球、Ｎｉ等の金属部材からなるビ−ズ部材を含んだソル
ダ−を介して、加圧及び加熱してベ−ス上に固着する方
法が開示された。この方法によれば、ソルダ−に生じて
いる酸化被膜はビ−ズ部材によって、分断除去されるの
で、半導体レ−ザ素子とベ−スの接触を良好にすること
ができるので、この半導体レ−ザ素子から発生する熱を
効率良くベ−スを介して外部に放出することができる。In order to solve this problem, as shown in Japanese Utility Model Laid-Open Publication No. 3-41959, a semiconductor laser device is made of Cu.
A method has been disclosed in which a ball and a solder member including a bead member made of Ni or the like are used to press and heat the wire to fix it on a base. According to this method, the oxide film formed on the solder is separated and removed by the bead member, so that good contact between the semiconductor laser element and the base can be achieved. -The heat generated from the element can be efficiently released to the outside via the base.
【０００５】[0005]
【発明が解決しようとする課題】しかしながら、この半
導体レ−ザ素子を加圧及び加熱して、ベ−ス上に固着し
た場合、ビ−ズ部材はＣｕ球、Ｎｉ等の硬い金属材料で
構成されているので、この半導体レ−ザ素子にダメ−ジ
が加えられ、半導体レ−ザ素子を構成する結晶に転位や
結晶欠陥等が発生する。このため、この半導体レ−ザ素
子の信頼性を低下させていた。そこで、本発明は、上記
のような問題点を解消するためになされたもので、酸化
膜を介さず、かつダメ−ジを与えることなく、半導体レ
−ザ素子を放熱体に固着する半導体レ−ザ装置を提供す
ることを目的とする。However, when this semiconductor laser element is fixed on a base by pressing and heating, the bead member is made of a hard metal material such as Cu spheres or Ni. Therefore, damage is added to the semiconductor laser element, and dislocations, crystal defects, and the like are generated in crystals constituting the semiconductor laser element. For this reason, the reliability of the semiconductor laser device has been reduced. SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems, and a semiconductor laser element for fixing a semiconductor laser element to a heat radiator without passing through an oxide film and without damaging the semiconductor laser element. -To provide the device.
【０００６】[0006]
【課題を解決するための手段】本発明の半導体レ−ザ装
置は、半導体レ−ザ素子を金属ろう材を介して放熱体上
に固着した半導体レ−ザ装置において、前記半導体レ−
ザ素子は、前記放熱体と対向する側に凹凸部を形成した
ことを特徴とする。According to the present invention, there is provided a semiconductor laser device in which a semiconductor laser element is fixed on a heat radiator via a metal brazing material.
The device is characterized in that an uneven portion is formed on the side facing the heat radiator.
【０００７】[0007]
【発明の実施の形態】本発明による半導体レ−ザ装置の
一実施例について図１、図２を用いて説明する。図１
は、ＡｌＧａＡｓ半導体レ−ザ素子２の断面図である。
図２は、ＡｌＧａＡｓ半導体レ−ザ素子２を金属ろう材
１１を介して放熱体１０に固着した半導体レ−ザ装置１
の断面図である。本発明の実施例の半導体レ−ザ装置１
は、ＡｌＧａＡｓ半導体レ−ザ素子２を金属ろう材１１
を介して、放熱体１０上に固着する際に、この金属ろう
材１１に形成される酸化被膜を破りやすくするために、
ＡｌＧａＡｓ半導体レ−ザ素子２のｐ−ＧａＡｓコンタ
クト層７に凹凸部７ａを形成した点に特徴がある。DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment of a semiconductor laser device according to the present invention will be described with reference to FIGS. FIG.
1 is a sectional view of an AlGaAs semiconductor laser device 2.
FIG. 2 shows a semiconductor laser device 1 in which an AlGaAs semiconductor laser element 2 is fixed to a radiator 10 via a metal brazing material 11.
FIG. Semiconductor laser device 1 according to an embodiment of the present invention
Is a method of connecting an AlGaAs semiconductor laser element 2 to a metal brazing material 11.
In order to make it easy to break the oxide film formed on the metal brazing material 11,
The AlGaAs semiconductor laser device 2 is characterized in that the p-GaAs contact layer 7 has an uneven portion 7a.
【０００８】まず初めに、ＡｌＧａＡｓ半導体レ−ザ素
子２について説明する。ＭＯＣＶＤ法（有機金属気相成
長方法）により、成長温度６００℃乃至６５０℃で、ｎ
−ＧａＡｓ基板３上にｎ−ＡｌＧａＡｓクラッド層４、
ＡｌＧａＡｓ活性層５、ｐ−ＡｌＧａＡｓクラッド層６
を順次積層する。次に、このｐ−ＡｌＧａＡｓクラッド
層６上に成長温度を５７５℃乃至６００℃の温度範囲に
して、凹凸部７ａを有したｐ−ＧａＡｓコンタクト層７
を形成する。First, the AlGaAs semiconductor laser device 2 will be described. By MOCVD (metal organic chemical vapor deposition), at a growth temperature of 600 ° C. to 650 ° C., n
An n-AlGaAs cladding layer 4 on a GaAs substrate 3;
AlGaAs active layer 5, p-AlGaAs cladding layer 6
Are sequentially laminated. Next, the growth temperature is set on the p-AlGaAs cladding layer 6 in the temperature range of 575 ° C. to 600 ° C., and the p-GaAs contact layer 7 having the uneven portion 7a is formed.
To form
【０００９】ここで、どのようにして、凹凸７ａを有し
たｐ−ＧａＡｓコンタクト層７が形成されるかについて
説明する。一般的に、ＭＯＣＶＤ法による半導体基板上
へのＧａＡｓ結晶の成長は、Ｇａ元素を含むＴＭＧ（ト
リメチルガリウム）とＡｓを含むＡｓＨ3 がこの半導体
基板上に到達すると、このＴＭＧがＧａとラジカルに、
ＡｓＨ3 がＡｓと水素に熱分解し、この分解したＧａと
Ａｓがこの半導体基板上で熱合成することによって行わ
れる。この際、この半導体基板上に良好なＧａＡｓ結晶
が得られるかどうかは、ＧａＡｓ結晶を成長する際の成
長温度に依存する。Here, how the p-GaAs contact layer 7 having the unevenness 7a is formed will be described. In general, a GaAs crystal is grown on a semiconductor substrate by the MOCVD method. When TMG (trimethylgallium) containing Ga element and AsH 3 containing As reach the semiconductor substrate, the TMG is converted into Ga and radicals.
AsH 3 is thermally decomposed into As and hydrogen, and the decomposed Ga and As are thermally synthesized on the semiconductor substrate. At this time, whether or not a good GaAs crystal is obtained on the semiconductor substrate depends on the growth temperature when growing the GaAs crystal.
【００１０】ＧａＡｓの成長温度が高い場合には、Ｇａ
とＡｓが活発に熱分解及び熱合成するので、ＧａＡｓ結
晶成長レ−トや組成が大幅に変化し、この半導体基板上
には、化学量論的に安定した結晶性を有するＧａＡｓ結
晶を得ることができない。一方、このＧａＡｓの成長温
度が低い場合には、ＴＭＧから熱分解されたＧａとＡｓ
Ｈ3 から熱分解されたＡｓのマイグレ−ションが十分行
われないので、近接した位置でのＧａとＡｓ同士が結合
するため、この半導体基板上には、クラスタ状にＧａＡ
ｓが点在して成長することになる。このクラスタ状に成
長したＧａＡｓの平面的な大きさや厚さは、バラツキを
生じるため、この半導体基板上には、凹凸部が形成され
ることになるのである。When the growth temperature of GaAs is high, Ga
As and As are actively pyrolyzed and thermally synthesized, the GaAs crystal growth rate and composition are greatly changed, and a stoichiometrically stable GaAs crystal is obtained on this semiconductor substrate. Can not. On the other hand, when the growth temperature of the GaAs is low, Ga thermally decomposed from TMG and As
Since migration of As thermally decomposed from H 3 is not sufficiently performed, Ga and As at adjacent positions are bonded to each other, so that GaAs is formed on the semiconductor substrate in a cluster shape.
s will be scattered and grow. Since the planar size and thickness of the GaAs grown in a cluster shape vary, an uneven portion is formed on the semiconductor substrate.
【００１１】しかしながら、このＧａＡｓの成長温度を
低くしすぎると、ＴＭＧとＡｓＨ3の熱分解及び熱合成
が行われなくなるので、この半導体基板上には、ＧａＡ
ｓ結晶を得ることができない。また、実験的には、ＴＭ
ＧとＡｓＨ3 の熱分解及び熱合成が行われる下限の温度
は、５７５℃であり、凹凸部が形成し始める温度は６０
０℃であることが経験的に知られている。この結果、半
導体基板上に凹凸部を有するＧａＡｓを形成するために
は、このＧａＡｓの成長温度を５７５℃乃至６００℃に
することが必要となる。このように、ｐ−ＧａＡｓコン
タクト層７の成長温度を５７５℃乃至６００℃までの温
度範囲にすれば、凹凸部７ａを有したｐ−ＧａＡｓコン
タクト層７が得られることになるのである。However, if the growth temperature of GaAs is too low, thermal decomposition and thermal synthesis of TMG and AsH 3 will not be performed, so that GaAs is not formed on the semiconductor substrate.
s crystals cannot be obtained. Experimentally, TM
The lower limit temperature at which the thermal decomposition and thermal synthesis of G and AsH 3 are performed is 575 ° C., and the temperature at which the uneven portion starts to be formed is 60 ° C.
It is empirically known that the temperature is 0 ° C. As a result, in order to form GaAs having irregularities on a semiconductor substrate, it is necessary to set the growth temperature of GaAs to 575 ° C. to 600 ° C. As described above, if the growth temperature of the p-GaAs contact layer 7 is set in the temperature range of 575 ° C. to 600 ° C., the p-GaAs contact layer 7 having the uneven portion 7a can be obtained.
【００１２】次に、ｎ−ＧａＡｓ基板３上にｎ−ＡｌＧ
ａＡｓクラッド層４、ＡｌＧａＡｓ活性層５、ｐ−Ａｌ
ＧａＡｓクラッド層６、ｐ−ＧａＡｓコンタクト層７を
順次積層した側の逆方向側のｎ−ＧａＡｓ基板３をメカ
ニカルポリッシュ及びケミカルポリッシュにより研磨す
る。なお、ｐ−ＧａＡｓコンタクト層７上には、ｐオ−
ミック電極８を形成し、積層方向と反対側のｎ−ＧａＡ
ｓ基板３にはｎオ−ミック電極９を形成する。ここで、
ｐオ−ミック電極８の材料としては、ＡｕＢｅ、ｎオ−
ミック電極９の材料としては、Ｓｎである。ｐオ−ミッ
ク電極８の形状は、ｐ−ＧａＡｓコンタクト層７の形状
に対応して形成されるので、凹凸状となる。こうして、
ＡｌＧａＡｓ半導体レ−ザ素子２が得られる（図１）。Next, an n-AlG substrate is formed on the n-GaAs substrate 3.
aAs cladding layer 4, AlGaAs active layer 5, p-Al
The n-GaAs substrate 3 on the side opposite to the side on which the GaAs clad layer 6 and the p-GaAs contact layer 7 are sequentially laminated is polished by mechanical polishing and chemical polishing. The p-GaAs contact layer 7 has a p-type
And a n-GaAs layer on the opposite side of the stacking direction.
An n-ohmic electrode 9 is formed on the s substrate 3. here,
As a material of the p-type ohmic electrode 8, AuBe, n-type
The material of the mix electrode 9 is Sn. Since the shape of the p-ohmic electrode 8 is formed corresponding to the shape of the p-GaAs contact layer 7, it becomes uneven. Thus,
An AlGaAs semiconductor laser device 2 is obtained (FIG. 1).
【００１３】次に、このＡｌＧａＡｓ半導体レ−ザ素子
２のｐオ−ミック電極８側を放熱体１０に対向させて配
置し、金属ろう材１１を介してこのＡｌＧａＡｓ半導体
レ−ザ素子２を放熱体１０上に載置、加圧及び加熱して
固着することにより、本発明になる半導体レ−ザ装置１
が得られる（図２）。ここで、金属ろう材１１の材料と
しては、例えば、ＡｕＳｎ、ＡｕＳｉ、Ａｇペ−スト等
がある。放熱体１０の材料としては、例えば、Ｃｕ、Ｓ
ｉ、ダイヤモンド等がある。Next, the AlGaAs semiconductor laser element 2 is arranged so that the p-ohmic electrode 8 side faces the heat radiator 10, and the AlGaAs semiconductor laser element 2 is radiated through the metal brazing material 11. A semiconductor laser device 1 according to the present invention, which is mounted on a body 10, and fixed by pressing and heating.
Is obtained (FIG. 2). Here, examples of the material of the metal brazing material 11 include AuSn, AuSi, and Ag paste. As a material of the radiator 10, for example, Cu, S
i, diamond and the like.
【００１４】次に、本発明になる半導体レ−ザ装置１の
具体的な構成につき以下、詳述する。本発明は、前記し
た如く、ＡｌＧａＡｓ半導体レ−ザ素子２に形成した凹
凸部７ａにより、金属ろう材１１に形成されている酸化
被膜を分断除去し、酸化被膜のない部分の金属ろう材１
１とこのＡｌＧａＡｓ半導体レ−ザ素子２を接触させ、
しかる後、このＡｌＧａＡｓ半導体レ−ザ素子２を加圧
及び加熱して放熱体１０上に固着するので、熱伝導度が
改善され、このＡｌＧａＡｓ半導体レ−ザ素子２から発
生する熱は、放熱体１０を介して外部に効率良く放出す
ることができる。また、従来例に示すように、この金属
ろう材１１に形成されている酸化被膜を分断するため
に、Ｃｕ球、Ｎｉ等の金属部材からなるビ−ズ部材を用
いないので、このＡｌＧａＡｓ半導体レ−ザ素子２にダ
メ−ジを与えることなく、これをこの放熱体１０に固着
することができ、信頼性の高いＡｌＧａＡｓ半導体レ−
ザ素子２が得られる。Next, a specific configuration of the semiconductor laser device 1 according to the present invention will be described in detail below. According to the present invention, as described above, the oxide film formed on the metal brazing material 11 is divided and removed by the concave and convex portions 7a formed on the AlGaAs semiconductor laser element 2, and the metal brazing material 1 having no oxide film is removed.
1 and this AlGaAs semiconductor laser element 2
Thereafter, the AlGaAs semiconductor laser element 2 is pressurized and heated to be fixed on the radiator 10, so that the thermal conductivity is improved, and the heat generated from the AlGaAs semiconductor laser element 2 is reduced by the radiator. 10 can be efficiently released to the outside. Further, as shown in the conventional example, a bead member made of a metal member such as Cu sphere or Ni is not used to divide the oxide film formed on the metal brazing material 11, so that the AlGaAs semiconductor laser is not used. -The element 2 can be fixed to the heat radiator 10 without damaging the element 2, thereby providing a highly reliable AlGaAs semiconductor laser.
The element 2 is obtained.
【００１５】また、凹凸部７ａを有するｐ−ＧａＡｓコ
ンタクト層７の形成は、このｐ−ＧａＡｓコンタクト層
７を成長する際にド−プする不純物を増加させたり、Ｔ
ＭＧに対するＡｓＨ3 の割合をその最適値からずらし、
このｐ−ＧａＡｓコンタクト層７の結晶性を悪くするこ
とによっても可能である。ここで、このＡｌＧａＡｓ半
導体レ−ザ素子２の特性は、ｎ−ＡｌＧａＡｓクラッド
層４、ＡｌＧａＡｓ活性層５、ｐ−ＡｌＧａＡｓクラッ
ド層６により決定されるので、このｐ−ＧａＡｓコンタ
クト層７の結晶性を悪くしても、このＡｌＧａＡｓ半導
体レ−ザ素子２の特性への影響はない。The formation of the p-GaAs contact layer 7 having the uneven portion 7a can be achieved by increasing the amount of impurities to be doped when the p-GaAs contact layer 7 is grown or by increasing the T-type impurity.
Shifting the ratio of AsH 3 to MG from its optimal value,
It is also possible by making the crystallinity of the p-GaAs contact layer 7 worse. Here, since the characteristics of the AlGaAs semiconductor laser element 2 are determined by the n-AlGaAs cladding layer 4, the AlGaAs active layer 5, and the p-AlGaAs cladding layer 6, the crystallinity of the p-GaAs contact layer 7 is determined. At worst, the characteristics of the AlGaAs semiconductor laser element 2 are not affected.
【００１６】更に、ＡｌＧａＡｓ半導体レ−ザ素子２の
ｐオ−ミック電極８側を放熱体１０に固着する代わり
に、ＡｌＧａＡｓ半導体レ−ザ素子２のｎオ−ミック電
極９側を固着する場合には、積層方向と逆方向側のｎ−
ＧａＡｓ基板３をメカニカルポリッシュして、このｎ−
ＧａＡｓ基板３に図示しない凹凸部を形成することによ
って、同様な効果が得られる。即ち、ＡｌＧａＡｓ半導
体レ−ザ素子２のｎ−ＧａＡｓ基板３に形成された図示
しない凹凸部により、金属ろう材１１に形成されている
酸化被膜を分断除去し、酸化被膜のない部分の金属ろう
材１１とこのＡｌＧａＡｓ半導体レ−ザ素子２を接触さ
せ、しかる後、このＡｌＧａＡｓ半導体レ−ザ素子２を
加圧及び加熱して放熱体１０上に固着するので、熱伝導
度が改善され、このＡｌＧａＡｓ半導体レ−ザ素子２か
ら発生する熱をこの放熱体１０を介して外部に効率良く
放出することができるのである。また、本発明の実施例
は、ＡｌＧａＡｓ系半導体レ−ザ素子に限定されるもの
ではなく、III−V族系半導体レ−ザ素子、II−VI族系半
導体レ−ザ素子等に広く適用できることはいうまでもな
い。Furthermore, instead of fixing the p-type ohmic electrode 8 side of the AlGaAs semiconductor laser element 2 to the heat radiator 10, the n-type ohmic electrode 9 side of the AlGaAs semiconductor laser element 2 is fixed. Is n- on the side opposite to the stacking direction.
The GaAs substrate 3 is mechanically polished, and the n-
A similar effect can be obtained by forming an uneven portion (not shown) on the GaAs substrate 3. That is, the oxide film formed on the metal brazing material 11 is divided and removed by the uneven portion (not shown) formed on the n-GaAs substrate 3 of the AlGaAs semiconductor laser device 2, and the metal brazing material having no oxide film is removed. The AlGaAs semiconductor laser element 2 is brought into contact with the AlGaAs semiconductor laser element 2, and then the AlGaAs semiconductor laser element 2 is pressurized and heated to be fixed on the radiator 10, so that the thermal conductivity is improved. The heat generated from the semiconductor laser element 2 can be efficiently radiated to the outside through the radiator 10. The embodiments of the present invention are not limited to AlGaAs-based semiconductor laser devices, but can be widely applied to III-V-based semiconductor laser devices, II-VI-based semiconductor laser devices, and the like. Needless to say.
【００１７】[0017]
【発明の効果】本発明の半導体レ−ザ装置によれば、凹
凸部が形成されている半導体レ−ザ素子側を放熱体に対
向させ、この凹凸部により金属ろう材に形成されている
酸化被膜を分断除去して、半導体レ−ザ素子を放熱体上
に固着できるので、酸化被膜のない部分の金属ろう材と
この半導体レ−ザ素子を接触させ、しかる後、この半導
体レ−ザ素子を加圧及び加熱して放熱体上に固着するの
で、熱伝導度が改善され、この半導体レ−ザ素子から発
生する熱を効率良く外部に放出することができる。ま
た、この半導体レ−ザ素子と放熱体との間には、金属ろ
う材以外の材料は介在しないので、この半導体レ−ザ素
子を放熱体上にダメ−ジを与えることなく固着すること
ができる。According to the semiconductor laser device of the present invention, the side of the semiconductor laser element on which the irregularities are formed is opposed to the heat radiator, and the oxidation formed on the metal brazing material by the irregularities. Since the semiconductor laser element can be fixed on the heat radiator by separating the coating, the metal brazing material having no oxide film is brought into contact with the semiconductor laser element. Is fixed on the heat radiator by pressing and heating, the heat conductivity is improved, and the heat generated from the semiconductor laser element can be efficiently released to the outside. Further, since no material other than the brazing metal is interposed between the semiconductor laser element and the heat radiator, it is possible to fix the semiconductor laser element on the heat radiator without damaging the semiconductor laser element. it can.
【図１】本発明におけるＡｌＧａＡｓ半導体レ−ザ素子
の断面図である。FIG. 1 is a sectional view of an AlGaAs semiconductor laser device according to the present invention.
【図２】本発明のＡｌＧａＡｓ半導体レ−ザ素子を金属
ろう材を介して放熱体に固着した半導体レ−ザ装置を示
す断面図である。FIG. 2 is a cross-sectional view showing a semiconductor laser device in which the AlGaAs semiconductor laser device of the present invention is fixed to a heat radiator via a brazing metal.
【図３】従来の半導体レ−ザ装置を示す断面図である。FIG. 3 is a sectional view showing a conventional semiconductor laser device.
１…半導体レ−ザ装置、２…ＡｌＧａＡｓ半導体レ−ザ
素子、３…ｎ−ＧａＡｓ基板、４…ｎ−ＡｌＧａＡｓク
ラッド層、５…ＡｌＧａＡｓ活性層、６…ｐ−ＡｌＧａ
Ａｓクラッド層、７…ｐ−ＧａＡｓコンタクト層、７ａ
…凹凸部、８…ｐオ−ミック電極、９…ｎオ−ミック電
極、１０…放熱体、１１…金属ろう材DESCRIPTION OF SYMBOLS 1 ... Semiconductor laser device, 2 ... AlGaAs semiconductor laser element, 3 ... n-GaAs substrate, 4 ... n-AlGaAs cladding layer, 5 ... AlGaAs active layer, 6 ... p-AlGa
As clad layer, 7 ... p-GaAs contact layer, 7a
... Roughness, 8 p-ohmic electrode, 9 n-ohmic electrode, 10 radiator, 11 metal brazing material
Claims (1)
熱体上に固着した半導体レ−ザ装置において、前記半導
体レ−ザ素子は、前記放熱体と対向する側に凹凸部を形
成したことを特徴とする半導体レ−ザ装置。In a semiconductor laser device having a semiconductor laser element fixed on a heat radiator via a metal brazing material, the semiconductor laser element has an uneven portion on a side facing the heat radiator. And a semiconductor laser device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31423197A JPH11135892A (en) | 1997-10-30 | 1997-10-30 | Semiconductor laser device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31423197A JPH11135892A (en) | 1997-10-30 | 1997-10-30 | Semiconductor laser device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH11135892A true JPH11135892A (en) | 1999-05-21 |
Family
ID=18050872
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP31423197A Pending JPH11135892A (en) | 1997-10-30 | 1997-10-30 | Semiconductor laser device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH11135892A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2000063967A1 (en) * | 1999-04-20 | 2000-10-26 | Toyo Kohan Co., Ltd. | Heat sink base, heat sink, and method of manufacturing heat sink |
| JP2005142224A (en) * | 2003-11-04 | 2005-06-02 | Denso Corp | Packaging method of semiconductor laser element |
| JP2005223353A (en) * | 2000-11-01 | 2005-08-18 | Matsushita Electric Ind Co Ltd | Semiconductor light-emitting device, and methods of manufacturing and driving the same |
| JP2008532279A (en) * | 2005-02-25 | 2008-08-14 | エルエス ケーブル リミテッド | Laser diode with improved heat dissipation structure and method of manufacturing the same |
| JP2012227484A (en) * | 2011-04-22 | 2012-11-15 | Fujitsu Semiconductor Ltd | Semiconductor device and manufacturing method of the same |
| JPWO2021177292A1 (en) * | 2020-03-04 | 2021-09-10 |
-
1997
- 1997-10-30 JP JP31423197A patent/JPH11135892A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2000063967A1 (en) * | 1999-04-20 | 2000-10-26 | Toyo Kohan Co., Ltd. | Heat sink base, heat sink, and method of manufacturing heat sink |
| JP2005223353A (en) * | 2000-11-01 | 2005-08-18 | Matsushita Electric Ind Co Ltd | Semiconductor light-emitting device, and methods of manufacturing and driving the same |
| JP2005142224A (en) * | 2003-11-04 | 2005-06-02 | Denso Corp | Packaging method of semiconductor laser element |
| JP2008532279A (en) * | 2005-02-25 | 2008-08-14 | エルエス ケーブル リミテッド | Laser diode with improved heat dissipation structure and method of manufacturing the same |
| JP2012227484A (en) * | 2011-04-22 | 2012-11-15 | Fujitsu Semiconductor Ltd | Semiconductor device and manufacturing method of the same |
| JPWO2021177292A1 (en) * | 2020-03-04 | 2021-09-10 | ||
| WO2021177292A1 (en) * | 2020-03-04 | 2021-09-10 | 株式会社デンソー | Semiconductor device, and manufacturing method therefor |
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