JPH11131298A - Device and method for plating small article - Google Patents

Device and method for plating small article

Info

Publication number
JPH11131298A
JPH11131298A JP9316555A JP31655597A JPH11131298A JP H11131298 A JPH11131298 A JP H11131298A JP 9316555 A JP9316555 A JP 9316555A JP 31655597 A JP31655597 A JP 31655597A JP H11131298 A JPH11131298 A JP H11131298A
Authority
JP
Japan
Prior art keywords
plating
plated
component
cathode
holding member
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9316555A
Other languages
Japanese (ja)
Other versions
JP3229259B2 (en
Inventor
Yasushi Yumiba
康司 弓場
Atsushi Nakajima
淳 中島
Masanori Mizushiro
政憲 水城
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Taiyo Kagaku Kogyo Co Ltd
Original Assignee
Taiyo Kagaku Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiyo Kagaku Kogyo Co Ltd filed Critical Taiyo Kagaku Kogyo Co Ltd
Priority to JP31655597A priority Critical patent/JP3229259B2/en
Publication of JPH11131298A publication Critical patent/JPH11131298A/en
Application granted granted Critical
Publication of JP3229259B2 publication Critical patent/JP3229259B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Abstract

PROBLEM TO BE SOLVED: To form a uniform plating film which is free from any variance in film thickness of the plating film between parts to be plated by eliminating lapping of the parts to be plated in a plating solution, to facilitate the handling of the parts to be plated, and to facilitate a plating process for plating each end part in particular. SOLUTION: This plating device comprises a plating tank 2 to store a plating solution 11, an anode 7 which is immersed in the plating solution 11 in the plating tank 2 and with which parts (a) to be plated are brought into contact, an anode 6 which is immersed in the plating solution 11 in the plating tank 2, and a power source 10 to flow the current to the anode 6 and the cathode 7. The cathode 7 is formed of a sheet through which the plating solution can be passed, and the parts (a) to be plated are held by a plate-like holding member 17, and the holding member 17 is arranged so that a part of the plated parts (a) projected from the holding member 17 is brought into contact with a conductor of the cathode 7. The current flows in the anode 6 and the cathode 7 in this condition to deposit the plating on an end part of the parts (a).

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【産業上の利用分野】本発明は、チップ形回路部品等の
小物部品にメッキを施す小物部品メッキ装置とメッキ方
法に関し、特に、小物部品に均一な膜厚のメッキ膜を形
成することができる小物部品メッキ装置と方法に関す
る。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a small component plating apparatus and a plating method for plating a small component such as a chip type circuit component, and more particularly, to a plating film having a uniform film thickness on a small component. The present invention relates to an apparatus and method for plating small parts.

【0002】[0002]

【従来の技術】積層セラミックコンデンサ等のチップ状
回路部品の外部電極上にメッキ膜を形成するための装置
として、従来はバレルメッキ装置が多く用いられてい
る。バレルメッキ装置は筒形の回転自在なバレル内に陰
極を設け、メッキ部品とほぼ同形状若しくは僅かに小さ
な導電性メディアと共にメッキ部品をバレル内に収納
し、このバレルを、メッキ浴槽の中に満たしたメッキ液
に浸漬する。メッキ浴槽内には前記バレルとは別に陽極
が設けられ、バレル内の陰極と陽極とに電源から直流電
圧が印加されるようになっている。また、バレルの回転
軸は駆動源に接続され、バレルがメッキ浴槽内で回転駆
動されるようになっている。メッキ部品を収納したバレ
ルを回転させながら、前記陽極と陰極間の間に直流電流
を流し、通電すると、メッキ部品の表面にメッキ膜が析
出する。
2. Description of the Related Art Conventionally, a barrel plating apparatus has been widely used as an apparatus for forming a plating film on external electrodes of a chip-shaped circuit component such as a multilayer ceramic capacitor. Barrel plating equipment installs a cathode in a cylindrical rotatable barrel, stores the plated parts in a barrel with a conductive medium of almost the same shape as or slightly smaller than the plated parts, and fills the barrel into a plating bath. Dipped in the plating solution. An anode is provided in the plating bath separately from the barrel, and a DC voltage is applied from a power supply to a cathode and an anode in the barrel. Further, the rotating shaft of the barrel is connected to a driving source, and the barrel is driven to rotate in the plating bath. When a DC current is passed between the anode and the cathode while rotating the barrel containing the plated component and energized, a plating film is deposited on the surface of the plated component.

【0003】しかしながら、チップ形セラミック電子部
品の素体表面には複数の外部電極が形成されている部品
が多く、従来のバレル装置では各電極のメッキ膜の膜厚
がばらつくことがある。また、メッキ後におけるメッキ
部品とメディアとの分離が煩わしいという欠点がある。
こうした課題を解消するために、例えば、金属メッシュ
からなる陰極上にメッキ部品を載置し、この状態でメッ
キ部品をメッキ液に浸漬し、メッキを施す装置の提案が
されている(特開平8−3790号公報)。
[0003] However, many external electrodes are formed on the surface of the chip-type ceramic electronic component in many cases, and the thickness of the plating film of each electrode may vary in the conventional barrel device. In addition, there is a disadvantage that separation between the plated component and the medium after plating is troublesome.
In order to solve such a problem, for example, an apparatus has been proposed in which a plated component is placed on a cathode made of a metal mesh, and in this state, the plated component is immersed in a plating solution to perform plating (Japanese Patent Application Laid-Open No. Hei 8 (1996)). -3790).

【0004】この提案されたメッキ装置は、平板状の陰
極がメッシュまたは導電性多孔板により構成され、この
陰極上にメッキ部品を載せて、この陰極の上方に陽極を
対向させている。陰極は水平方向に往復運動させながら
メッキ液に浸漬され、この往復運動によって、陰極上で
メッキ部品のメッキを施す部分と陰極との接触部分を変
化させ、所要の部分に確実にメッキ膜を形成させようと
するものである。また、陰極の往復運動に際しは、スト
ロークの途中で陰極にストッパで衝撃を与え、この衝撃
によって陰極上のメッキ部品が反転するように試みられ
ている。
In this proposed plating apparatus, a flat cathode is formed of a mesh or a conductive porous plate, a plating component is placed on the cathode, and an anode is opposed above the cathode. The cathode is immersed in the plating solution while reciprocating in the horizontal direction, and by this reciprocating motion, the portion of the plating component to be plated on the cathode and the contact portion with the cathode are changed, and the plating film is reliably formed on the required portion It is to try to make it. In addition, during the reciprocating movement of the cathode, an impact is applied to the cathode by a stopper in the middle of a stroke, and an attempt is made to reverse the plated component on the cathode by the impact.

【0005】[0005]

【発明が解決しようとする課題】前記従来のメッキ装置
では、メッキ部品の陰極と接触する側の面とその反対側
の面とでメッキ膜の析出速度が大きく異なり、陰極と接
触する側の面でのメッキ膜が薄くなる。この結果、膜厚
のばらつきを生ずる。この不都合を解消する為に、前記
従来のメッキ装置では、金属メッシュ状の陰極を往復運
動させ、往復運動に際してストロ-クの途中で衝撃を与
えることによって、メッキ部品を反転させ、メッキ部品
の所要の部分にメッキを施すことを試みている。しか
し、このようなメッキ物の反転手段によるものでは、偶
然性に頼るところが多く、確実性に欠け、やはりメッキ
膜の厚みにばらつきが生じる。しかも、メッキ部品同士
が重なり合いやすく、それによってメッキ膜の厚みがば
らつくという課題がある。また、メッキ部品が完全なば
ら積み状態で取り扱われるため、メッキ部品の取扱いが
面倒で、工程の連続処理がしにくいという課題もあっ
た。
In the conventional plating apparatus, the deposition rate of the plating film is greatly different between the surface of the plating component on the side in contact with the cathode and the surface on the opposite side. Plating film becomes thinner. As a result, variations in film thickness occur. In order to solve this inconvenience, in the conventional plating apparatus, the metal mesh cathode is reciprocated, and a shock is applied in the middle of the stroke during the reciprocating motion, thereby inverting the plated component, thereby reducing the required plating component. I am trying to plating on the part. However, such a method of reversing the plated material often relies on chance, lacks certainty, and again causes variations in the thickness of the plated film. In addition, there is a problem that the plated parts are liable to overlap with each other, whereby the thickness of the plated film varies. In addition, since the plated components are handled in a completely bulk state, there is a problem that handling of the plated components is troublesome, and it is difficult to perform a continuous process.

【0006】そこで本発明は、前記従来のメッキ装置に
おける課題に鑑みてなされたもので、その第一の目的
は、メッキ中におけるメッキ部品の重なり合い等をなく
し、これによって各メッキ部品間でのメッキ膜の膜厚に
ばらつきがなく、均一なメッキ膜を形成することを可能
とするものである。さらに本発明の第二の目的は、メッ
キ部品の取扱いを容易にし、特にその両端部へメッキ施
す工程を容易にすることにある。
Accordingly, the present invention has been made in view of the problems in the above-mentioned conventional plating apparatus, and a first object of the present invention is to eliminate the overlap of plated parts during plating and thereby to prevent plating between plated parts. This makes it possible to form a uniform plating film with no variation in film thickness. It is a second object of the present invention to facilitate the handling of plated parts, and particularly to facilitate the step of plating both ends.

【0007】[0007]

【課題を解決する手段】本発明では、前記の目的を達成
するため、メッキ部品aを保持部材17に保持した状態
で、メッキ部品aの一部を保持部材17から突出させ、
この保持部材17から突出したメッキ部品aの一部を、
メッキ液に浸漬したメッキ液が通過可能な陰極7に接触
させると共に、この陰極7に陽極6を対向させ、これら
陽極6と陰極7に電流を流すものである。これにより、
複数のメッキ部品aを保持部材17に保持した状態で容
易に取り扱えるようにすると共に、メッキ部品aの重な
り合いや接触、或いは集積密度のむらをなくすことがで
きるようにした。
According to the present invention, in order to achieve the above object, a part of the plated component a is made to protrude from the holding member 17 while the plated component a is held by the holding member 17.
A part of the plated component a protruding from the holding member 17 is
The anode 6 is brought into contact with the cathode 7 through which the plating solution immersed in the plating solution can pass, the anode 6 is opposed to the cathode 7, and a current flows through the anode 6 and the cathode 7. This allows
The plurality of plated parts a can be easily handled while being held by the holding member 17, and the overlap and contact of the plated parts a or the unevenness of the integration density can be eliminated.

【0008】すなわち、本発明による小物部品メッキ装
置は、メッキ液11を溜めるメッキ浴槽2と、このメッ
キ浴槽2のメッキ液11に浸漬され、メッキを施すメッ
キ部品aが接触する陰極7と、メッキ浴槽2のメッキ液
11に浸漬された陽極6と、これら陽極6と陰極7とに
電流を流す電源10とを有する。ここで、前記陰極7
は、メッキ液が通過可能な薄板状のものからなり、メッ
キ部品aが板状の保持部材17により保持されると共
に、保持部材17から突出したメッキ部品aの一部が前
記陰極7の導体に接触するよう保持部材17が配置され
ている。この状態で前記陽極6と陰極7とに電流を流
し、同メッキ部品aの端部にメッキを析出させる。前記
のような、メッキ液11が通過可能な薄板状の陰極7
は、例えば、メッシュ状、多孔質状、不織布状の何れか
であって、導電性を有するものからなる。
That is, the small component plating apparatus according to the present invention comprises a plating bath 2 for storing a plating solution 11, a cathode 7 which is immersed in the plating solution 11 of the plating bath 2 and contacts a plating component a to be plated, and a plating bath. It has an anode 6 immersed in a plating solution 11 of a bathtub 2 and a power supply 10 for supplying a current to the anode 6 and the cathode 7. Here, the cathode 7
Is composed of a thin plate through which a plating solution can pass. The plating component a is held by the plate-like holding member 17, and a part of the plating component a protruding from the holding member 17 becomes a conductor of the cathode 7. The holding member 17 is arranged to be in contact. In this state, a current is applied to the anode 6 and the cathode 7 to deposit plating on the end of the plated component a. As described above, the thin plate-shaped cathode 7 through which the plating solution 11 can pass.
Is, for example, any one of a mesh shape, a porous shape, and a nonwoven fabric shape, and is made of a material having conductivity.

【0009】メッキ部品aは、そのメッキを施そうとす
る少なくとも一部が保持部材17から突出し、この保持
部材17から突出したメッキ部品aの一部が、前記陰極
7の片面でその導体に接触している。例えば、メッキ部
品aのメッキを施そうとする両端のそれぞれを、保持部
材17の両面から突出し、この保持部材17から突出し
たメッキ部品aの一方の端部を前記陰極7の片面でその
導体に接触させる。この状態でメッキ部品aの一方の端
部にメッキを施す。次に、保持部材17を反転させて、
メッキ部品aの他方の端部を陰極7の導体に接触させ
る。この状態でメッキ部品aの他方の端部にメッキを施
す。これによって、メッキ部品aの両端にメッキが施さ
れる。
At least a part of the plated component a that is to be plated protrudes from the holding member 17, and a part of the plated component a protruding from the holding member 17 contacts the conductor on one surface of the cathode 7. doing. For example, both ends of the plated component a to be plated are projected from both surfaces of the holding member 17, and one end of the plated component a projected from the holding member 17 is connected to the conductor on one surface of the cathode 7. Make contact. In this state, one end of the plated component a is plated. Next, the holding member 17 is turned over,
The other end of the plated component a is brought into contact with the conductor of the cathode 7. In this state, the other end of the plated component a is plated. Thereby, plating is applied to both ends of the plated component a.

【0010】これは、陽極6と陰極7を1ずつ用いた場
合であるが、保持部材17から突出したメッキ部品aの
両端部を、これらメッキ部品aを挟むようにして配置さ
れた一対の陰極7、7で挟むようにして、それらの導体
にそれぞれ接触させると共に、その両側に陽極6、6を
配置すると、メッキ部品aの両端に同時にメッキを施す
こともできる。この場合は、メッキ部品aの両端が同時
にメッキされるため、メッキ部品aを保持した保持部材
17を反転する必要はない。
This is a case where one anode 6 and one cathode 7 are used, and a pair of cathodes 7 arranged so as to sandwich both ends of the plated part a projecting from the holding member 17 so as to sandwich the plated part a, When the anodes 6 and 6 are disposed on both sides of the conductor while being in contact with the conductors so as to be sandwiched between the conductors 7, both ends of the plated component a can be plated simultaneously. In this case, since both ends of the plated component a are plated simultaneously, there is no need to invert the holding member 17 holding the plated component a.

【0011】このようにして、メッキ部品aを保持部材
17に保持してメッキを行うことにより、メッキ部品a
の重なり合いや接触、或いはメッキ部品aの分散密度の
ばらつきがなくなり、各メッキ部品aに均一にメッキを
施すことができる。また、複数のメッキ部品aを保持部
材17によってまとめて取り扱えるので、メッキ工程に
おけるメッキ部品の反転や、メッキ工程の前後における
メッキ部品の取扱い、搬送等が容易になる。
In this manner, the plating component a is held by the holding member 17 and plating is performed, whereby the plating component a
And the dispersion of the plated parts a does not vary, and the plated parts a can be uniformly plated. Further, since the plurality of plated components a can be handled collectively by the holding member 17, it is easy to reverse the plated components in the plating process, and to handle and transport the plated components before and after the plating process.

【0012】保持部材17にメッキ部品aを保持する位
置に隣接して、両面に貫通する通孔状のメッキ液通路1
9を設けると、保持部材17を通してメッキ液が円滑に
流通する。さらに、メッキを行う際に、メッキ部品aを
陰極7、7に対して、その面方向に相対移動すると、メ
ッキ部品aが陰極7の導体と接触する部位が絶えず変わ
るため、メッキ膜の膜厚のばらつきを無くすのに有効で
ある。
A through-hole-shaped plating solution passage 1 penetrating both sides adjacent to a position where the plating component a is held by the holding member 17.
When 9 is provided, the plating solution flows smoothly through the holding member 17. Further, when the plating component a is moved relative to the cathodes 7 and 7 in the surface direction during plating, the portion where the plating component a contacts the conductor of the cathode 7 is constantly changed. It is effective to eliminate the variation of.

【0013】[0013]

【発明の実施の形態】次に、図面を参照しながら、本発
明の実施の形態について、具体的且つ詳細に説明する。
図1に本発明による小物部品メッキ装置の例を示す。図
1に示すように、湯浴槽1の中にメッキ浴槽2が設けら
れ、このメッキ浴槽2の中にはメッキ液11が満たされ
ている。このメッキ液11は、湯温槽1の中に満たされ
た温湯により、所定の温度に維持される。
Embodiments of the present invention will now be described specifically and in detail with reference to the drawings.
FIG. 1 shows an example of a small component plating apparatus according to the present invention. As shown in FIG. 1, a plating bath 2 is provided in a hot water bath 1, and the plating bath 11 is filled with a plating solution 11. The plating solution 11 is maintained at a predetermined temperature by hot water filled in the hot water tank 1.

【0014】メッキ浴槽2内のメッキ液11には、一対
の陽極6と陰極7とが浸漬されている。陽極6は金属板
からなる。他方、陰極7は、枠縁状のフレーム15の間
に金属線13を張ったもので、網やパンチングメタル
等、メッキ液が通過可能なものからなる。図3は、パン
チングメタルからなる陰極7の例を示す。
A pair of anode 6 and cathode 7 are immersed in plating solution 11 in plating bath 2. The anode 6 is made of a metal plate. On the other hand, the cathode 7 has a metal wire 13 stretched between frame-shaped frames 15 and is made of a material such as a net or a punched metal through which a plating solution can pass. FIG. 3 shows an example of the cathode 7 made of punched metal.

【0015】図2及び図3は、パンチングメタルからな
る陰極7の例を示すが、図2に示すように、陰極7のフ
レーム15に張られた金属線13の下面側が絶縁被膜1
4で覆われている。陰極7が網でできている場合は、金
属線13が上下に交錯するよう編まれているが、やはり
同様にして下面側のみが絶縁被膜14で覆われる。図4
に陽極6を示す。この陽極6は、陰極7の絶縁被膜14
が設けられたとの反対側の面に対向するよう配置され
る。なお、図3及び図4の例では、陽極6及び陰極7
は、何れも正方形であるが、それらは矩形、円形、或い
は楕円形等、必要に応じて適宜な形状をとることができ
る。
FIGS. 2 and 3 show an example of the cathode 7 made of punched metal. As shown in FIG. 2, the lower surface side of the metal wire 13 stretched on the frame 15 of the cathode 7 has an insulating coating 1.
4 is covered. When the cathode 7 is made of a net, the metal wires 13 are woven so as to intersect with each other up and down. Similarly, only the lower surface is covered with the insulating coating 14. FIG.
Shows the anode 6. The anode 6 serves as an insulating coating 14 for the cathode 7.
Are disposed so as to face the surface on the side opposite to the surface on which is provided. In the examples of FIGS. 3 and 4, the anode 6 and the cathode 7
Are all squares, but they can take any appropriate shape, such as a rectangle, a circle, or an ellipse, as needed.

【0016】さらに、メッキ部品aを1つずつ保持する
保持孔18を有する板状の保持部材17を使用する。こ
の保持部材17の保持孔18にメッキ部品aを嵌め込ん
で整列、保持し、この状態でメッキ部品aを陰極7上に
配置する。図3と図4に示した例では、陰極7の形状に
対応した板状の保持部材17を用意し、この保持部材1
7に縦横に設けた保持孔18にメッキ部品aを縦に嵌め
込んで保持している。この保持部材17は、シリコーン
ゴム等のメッキ液に侵されにくく、且つ弾力性を有する
板状の部材からなり、その厚さはメッキ部品aの高さよ
り薄い。
Further, a plate-like holding member 17 having a holding hole 18 for holding the plated parts a one by one is used. The plated component a is fitted into the holding hole 18 of the holding member 17 to be aligned and held, and the plated component a is arranged on the cathode 7 in this state. In the example shown in FIGS. 3 and 4, a plate-like holding member 17 corresponding to the shape of the cathode 7 is prepared, and
The plated parts a are vertically fitted into and held by holding holes 18 provided vertically and horizontally on the plate 7. The holding member 17 is a plate-like member which is hardly affected by a plating solution such as silicone rubber and has elasticity, and has a thickness smaller than the height of the plated component a.

【0017】図2にも示すように、メッキ部品aは保持
部材17の保持孔18に嵌め込まれ、メッキを施そうと
するメッキ部品aの両端が保持部材17の両主面からそ
れぞれ突出している。この状態で保持部材17ごとメッ
キ部品aが陰極7の上に載せられ、メッキ部品aのメッ
キを施そうとする一方の端部が陰極7の導体に接触す
る。メッキ部品aは、陰極7の前記絶縁被膜14が施さ
れたのと反対側の面、すなわち陽極6と対向している面
と反対側の面に接触する。符号13は陰極7の金属線1
3を示し、14はそれに設けた絶縁被膜である。
As shown in FIG. 2, the plated component a is fitted into the holding hole 18 of the holding member 17, and both ends of the plated component a to be plated project from both main surfaces of the holding member 17, respectively. . In this state, the plated component a together with the holding member 17 is placed on the cathode 7, and one end of the plated component a to be plated contacts the conductor of the cathode 7. The plated component a contacts the surface of the cathode 7 opposite to the surface on which the insulating coating 14 is applied, that is, the surface opposite to the surface facing the anode 6. Reference numeral 13 denotes the metal wire 1 of the cathode 7
Reference numeral 3 denotes an insulating coating provided thereon.

【0018】このように、陰極7のメッキ部品aが接触
したのと反対側の面に陽極6を配置したことに伴い、陰
極7の周辺部では中央部に比べて電界強度が大きくなり
やすい。そこで、前述のように、陰極7の中央部のみに
絶縁被膜14を設けたり、或いは陰極7の周辺部に比べ
て中央部における絶縁被膜14の被覆比率を高くするこ
とにより、この電界強度のばらつきを解消し、陰極7の
中央部と周辺部とにおけるメッキ部品aへのメッキ膜の
析出速度を均一化することができる。
As described above, with the arrangement of the anode 6 on the surface of the cathode 7 opposite to the surface where the plated part a is in contact, the electric field intensity tends to be larger at the periphery of the cathode 7 than at the center. Therefore, as described above, by providing the insulating film 14 only at the central portion of the cathode 7 or by increasing the covering ratio of the insulating film 14 at the central portion as compared with the peripheral portion of the cathode 7, this electric field intensity variation Can be eliminated, and the deposition rate of the plating film on the plating component a at the central portion and the peripheral portion of the cathode 7 can be made uniform.

【0019】図1に示すように、陽極6と陰極7とは、
水平に保持された状態で上下に対向し、メッキ浴槽2の
内部に満たされたメッキ液11に浸漬されている。図1
に示した例では、湯浴槽1に駆動体3が取り付けられ、
この駆動体3に連結部材4を介して水平にアーム5が取
り付けられている。このアーム5から垂直に垂下された
支持部材8、9を介して陽極6と陰極7とが上下に対向
するよう保持され、且つメッキ浴槽2内のメッキ液11
に浸漬されている。図1において矢印で示すように、駆
動体3は連結部材4を介してアーム5を、水平方向に往
復駆動するもので、これによって陽極6と陰極7とが水
平方向に往復移動させられる。この陰極7の水平方向の
往復移動に伴う保持部材17及びメッキ部品aの慣性力
により、陰極7に対してメッキ部品aが水平方向に相対
移動する。これにより、メッキ部品aの陰極7と接触す
る部位が絶えず変わる。
As shown in FIG. 1, the anode 6 and the cathode 7
It is immersed in the plating solution 11 filled inside the plating bath 2 while facing horizontally while being held horizontally. FIG.
In the example shown in (1), the driving body 3 is attached to the hot tub 1,
An arm 5 is horizontally attached to the driving body 3 via a connecting member 4. The anode 6 and the cathode 7 are held so as to face up and down via supporting members 8 and 9 vertically suspended from the arm 5, and the plating solution 11 in the plating bath 2 is held.
Is immersed in. As shown by the arrow in FIG. 1, the driving body 3 drives the arm 5 to reciprocate in the horizontal direction via the connecting member 4, whereby the anode 6 and the cathode 7 are reciprocated in the horizontal direction. The plating component a relatively moves in the horizontal direction with respect to the cathode 7 due to the inertial force of the holding member 17 and the plating component a accompanying the horizontal reciprocation of the cathode 7. As a result, the portion of the plated component a that comes into contact with the cathode 7 constantly changes.

【0020】陽極6と陰極7には電源10が接続され、
陽極6に正の、陰極7に負の電位を印加する。このよう
な小物部品メッキ装置では、図1に示すように、陰極7
の上面に保持部材17で保持されたメッキ部品aを載せ
て、その端部を陰極7の導体に接触すると共に、その下
面側に陽極6を対向させた状態でメッキ浴槽2内のメッ
キ液11に浸漬する。そして、前記電源10により、陽
極6と陰極7とに電流を流す。これによって、陽極6と
陰極7との間に、電解液であるメッキ液11を介して電
界が発生する。
A power supply 10 is connected to the anode 6 and the cathode 7,
A positive potential is applied to the anode 6 and a negative potential is applied to the cathode 7. In such a small component plating apparatus, as shown in FIG.
The plating component a held by the holding member 17 is placed on the upper surface of the plating solution 11 and the plating solution 11 in the plating bath 2 is placed in a state where the end thereof is in contact with the conductor of the cathode 7 and the anode 6 is opposed to the lower surface thereof. Soak in Then, a current is supplied to the anode 6 and the cathode 7 by the power supply 10. Thus, an electric field is generated between the anode 6 and the cathode 7 via the plating solution 11 which is an electrolytic solution.

【0021】陰極7を構成している金属線13は、陽極
6と対向する側が絶縁被膜14で覆われ、表面が絶縁さ
れているので、陰極7側では電界が金属線13の間を通
ってメッキ部品aが載せられている上面側に回り込む。
これによって、メッキ部品aのメッキ膜を施そうとする
部分には、陽極6が対向した下面側だけでなく、上面側
にもメッキ膜が析出する。この場合、陽極6を陰極7の
上面側、すなわちメッキ部品aを載せた側に対向した場
合に比べて、メッキ膜の上下におけるメッキ膜の析出速
度が平準化され、メッキ膜の析出速度にばらつきが生じ
ない。これによって、メッキ膜はメッキ部品の上下両面
に均一に析出する。
The metal wire 13 constituting the cathode 7 is covered with an insulating coating 14 on the side facing the anode 6 and is insulated from the surface, so that an electric field passes between the metal wires 13 on the cathode 7 side. It goes around the upper surface side on which the plated component a is placed.
As a result, a plating film is deposited not only on the lower surface side where the anode 6 faces but also on the upper surface side of the portion where the plating film of the plating component a is to be applied. In this case, as compared with the case where the anode 6 is opposed to the upper surface side of the cathode 7, that is, the side on which the plated component a is mounted, the deposition speed of the plating film above and below the plating film is leveled, and the deposition speed of the plating film varies. Does not occur. As a result, the plating film is uniformly deposited on both upper and lower surfaces of the plated component.

【0022】このとき、駆動体3によりアーム5を図1
において矢印で示すように往復移動させる。これによっ
て、陰極7に対してメッキ部品aが水平方向に相対移動
するため、メッキ部品aの陰極7と接触する部位が絶え
ず変わり、メッキ部品の所要の位置にメッキ膜が満遍な
く析出する。また、前記のようにして、陰極7のフレー
ム15に囲まれた内側の金属線13が張られた部分の上
にメッキ部品aを縦横に配置してメッキを行うことによ
り、メッキ部品aを互いに干渉させず、陰極7上に分散
してメッキを行うことが出来る。これによって、やはり
各メッキ部品a間のメッキ膜の析出速度のばらつきを解
消し、均一な膜厚のメッキ膜を施すことができる。
At this time, the arm 5 is moved by the driving body 3 as shown in FIG.
Is reciprocated as indicated by the arrow. As a result, the plated component a relatively moves in the horizontal direction with respect to the cathode 7, so that the portion of the plated component a that comes into contact with the cathode 7 is constantly changed, and the plating film is uniformly deposited at a desired position on the plated component. Further, as described above, the plated components a are arranged vertically and horizontally on the portion where the inner metal wires 13 are stretched and surrounded by the frame 15 of the cathode 7, and the plated components a are mutually plated. The plating can be performed by dispersing on the cathode 7 without causing interference. As a result, the variation in the deposition rate of the plating film between the plated components a can be eliminated, and a plating film having a uniform film thickness can be formed.

【0023】前記の装置では、図2(a)に示すよう
に、まずメッキ部品aの一方の端部を陰極7の導体に接
触させた状態で、同端部にメッキを施す。その後、保持
部材17ごとメッキ部品aを反転させて、図2(b)に
示すように、メッキ部品aの他の端部を陰極7の導体に
接触させる。この状態で、前記と同様にしてメッキ部品
aの他方の端部にメッキを施す。これによって、メッキ
部品aの両端にメッキが施される。
In the above-described apparatus, as shown in FIG. 2A, plating is first applied to one end of a plated component a in a state where the one end is in contact with the conductor of the cathode 7. Thereafter, the plated component a is turned over together with the holding member 17, and the other end of the plated component a is brought into contact with the conductor of the cathode 7 as shown in FIG. In this state, the other end of the plated component a is plated in the same manner as described above. Thereby, plating is applied to both ends of the plated component a.

【0024】図5に示した例は、保持部材17のメッキ
部品aを保持する保持孔18の近傍に、通孔状のメッキ
液通路19を設けたものである。メッキを行うに際し
て、このメッキ液通路19をメッキ液が通過するため、
メッキ液の流通が良くなり、メッキ部品aの所定の位置
に満遍なくメッキ膜を析出させることができる。
In the example shown in FIG. 5, a through-hole-shaped plating solution passage 19 is provided in the vicinity of the holding hole 18 of the holding member 17 for holding the plating component a. When plating, the plating solution passes through this plating solution passage 19,
The distribution of the plating solution is improved, and the plating film can be uniformly deposited at a predetermined position of the plated component a.

【0025】図6に示した例は、保持部材17に保持さ
れたメッキ部品aを挟むように、上下に陰極7、7を配
置し、保持部材17の両端から突出したメッキ部品aの
両端を、それぞれ上下の陰極7、7に接触させたもので
ある。下側の陰極7には、その金属線13の下側に絶縁
被膜14が設けられ、その金属線13の絶縁被膜14が
設けられていない上側にメッキ部品aの下端が接触して
いる。他方、上側の陰極7には、その金属線13の上側
に絶縁被膜14が設けられ、その金属線13の絶縁被膜
14が設けられていない下側にメッキ部品aの上端が接
触している。さらに、これら陰極7、7の上下に、それ
ぞれ陽極6、6が対向している。
In the example shown in FIG. 6, the cathodes 7, 7 are arranged vertically so as to sandwich the plated part a held by the holding member 17, and both ends of the plated part a projecting from both ends of the holding member 17 are connected. , Respectively, in contact with the upper and lower cathodes 7, 7. The lower cathode 7 is provided with an insulating coating 14 below the metal wire 13, and the lower end of the plated component a is in contact with the upper side of the metal wire 13 where the insulating coating 14 is not provided. On the other hand, the upper cathode 7 is provided with an insulating coating 14 above the metal wire 13, and the upper end of the plated component a is in contact with the lower side of the metal wire 13 where the insulating coating 14 is not provided. Further, anodes 6, 6 are opposed to the upper and lower sides of the cathodes 7, 7, respectively.

【0026】このような小物部品メッキ装置では、メッ
キ部品aの両端が同時にメッキされるため、保持部材1
7によるメッキ部品aの反転は不要となる。この図6に
示した例では、保持部材17が水平に設置され、陰極
7、7及び陽極6、6が上下に対向して設けられている
が、保持部材17を垂直に設置し、陰極7、7及び陽極
6、6を横方向に対向して設けることもできる。さら
に、保持部材17を斜めに設置し、陰極7、7及び陽極
6、6を斜め方向に対向して設けることもできる。これ
ら、1対ずつの陽極6、6及び陰極7、7とメッキ部品
aを保持した保持部材17の組み合わせは、単独ではな
く、メッキ液11の中に複数組列べて浸漬してメッキを
行うこともできる。
In such a small component plating apparatus, since both ends of the plated component a are plated simultaneously, the holding member 1
7, the reversal of the plated component a becomes unnecessary. In the example shown in FIG. 6, the holding member 17 is installed horizontally and the cathodes 7 and 7 and the anodes 6 and 6 are provided vertically facing each other. However, the holding member 17 is installed vertically and the cathode 7 is installed. , 7 and the anodes 6, 6 may be provided to face each other in the lateral direction. Further, the holding member 17 may be installed obliquely, and the cathodes 7, 7 and the anodes 6, 6 may be provided so as to face each other in an oblique direction. The combination of the pair of anodes 6 and 6 and the pair of cathodes 7 and 7 and the holding member 17 holding the plated component a is not solely used, but is immersed in a plurality of sets in the plating solution 11 for plating. You can also.

【0027】図7〜図10で示した例は、前記のよう
に、メッキ部品aを保持部材17の保持孔18に縦に嵌
め込んで保持しているものではなく、保持孔18にメッ
キ部品aを横に嵌め込んで保持している。メッキ部品a
は、その両側部が保持部材17から突出している。保持
部材17の保持孔18がメッキ部品aのメッキを施す両
端部分を避けて、その中央を保持するようにしており、
図示のものは2つの円形の孔を連ねた如き形をしてい
る。
The examples shown in FIGS. 7 to 10 do not vertically hold the plated component a in the holding hole 18 of the holding member 17 and hold the plated component a in the holding hole 18 as described above. a is fitted sideways and held. Plated parts a
Has both sides protruding from the holding member 17. The holding hole 18 of the holding member 17 avoids both ends where the plating of the plated component a is plated, and holds the center thereof.
The one shown has a shape as if two circular holes were connected.

【0028】図7に示すように、この保持部材17の保
持孔18の中にメッキ部品aを嵌め込み、そのメッキ部
品aの中央部を保持し、メッキ部品aを配列する。この
状態で、図8に示すように、この保持部材17を陰極7
のフレーム15に囲まれた内側の金属線13が張られた
部分の上に載せて、メッキ部品aを接触させ、前述と同
様にして図1に示すような装置でメッキ部品にメッキを
行う。これよって、メッキ部品aの両側からメッキ部品
aの両端部にメッキを施す。
As shown in FIG. 7, the plated component a is fitted into the holding hole 18 of the holding member 17, the central part of the plated component a is held, and the plated component a is arranged. In this state, as shown in FIG.
Is placed on the portion where the inner metal wire 13 is stretched surrounded by the frame 15 and the plated component a is brought into contact therewith, and the plated component is plated by the apparatus shown in FIG. 1 in the same manner as described above. Thus, plating is applied to both ends of the plated component a from both sides of the plated component a.

【0029】このようにして、陰極7のフレーム15に
囲まれた内側の金属線13が張られた部分の上にメッキ
部品aを縦横に配置してメッキを行うことにより、メッ
キ部品aを互いに干渉させず、陰極7上に分散してメッ
キを行うことが出来る。これによって、やはり各メッキ
部品a間のメッキ膜の析出速度のばらつきを解消し、均
一な膜厚のメッキ膜を施すことができる。なお、陰極7
の陽極6と対向する面側に、金属線13の下面側を覆う
絶縁被膜14を有することは、前述の例と同様である。
As described above, the plated parts a are arranged vertically and horizontally on the inner metal wire 13 surrounded by the frame 15 of the cathode 7 to perform plating. The plating can be performed by dispersing on the cathode 7 without causing interference. As a result, the variation in the deposition rate of the plating film between the plated components a can be eliminated, and a plating film having a uniform film thickness can be formed. The cathode 7
Is provided with an insulating coating 14 covering the lower surface of the metal wire 13 on the surface facing the anode 6 in the same manner as in the above-described example.

【0030】この例では、メッキ部品aを保持した保持
部材17を反転させて、その両側を陰極7に順次接触さ
せてメッキを行う必要は、必ずしもない。しかし、メッ
キ部品aを保持した保持部材17を反転させて、その両
側を陰極7に順次接触させてメッキを行うことが好まし
い。例えば、まずメッキ部品aの一方の側面を陰極7に
接触させてメッキ膜を施す。その後、保持部材17にメ
ッキ部品aを保持したまま、保持部材17を上下反転さ
せて、メッキ部品aの他方の側面を陰極7に接触させ
る。そして、前回と同じ条件でメッキ部品aにメッキ膜
を施す。これによって、メッキ部品aの双方の側面に均
一な膜厚のメッキ膜を施すことができる。さらに、前述
と同様にして、2枚ずつの陽極6、6と陰極7、7を使
用し、保持部材17に保持されたメッキ部品aをその両
側から挟むようにして陰極7、7に接触させ、メッキ部
品aの両側から同時にメッキを行うこともできる。
In this example, it is not always necessary to invert the holding member 17 holding the plated component a and perform plating by sequentially contacting both sides of the holding member 17 with the cathode 7. However, it is preferable to invert the holding member 17 holding the plated component a and perform plating by sequentially contacting both sides of the holding member 17 with the cathode 7. For example, first, a plating film is formed by bringing one side surface of the plated component a into contact with the cathode 7. Thereafter, the holding member 17 is turned upside down while holding the plated component a on the holding member 17, and the other side surface of the plated component a is brought into contact with the cathode 7. Then, a plating film is applied to the plating component a under the same conditions as the previous time. Thereby, a plating film having a uniform thickness can be applied to both side surfaces of the plating component a. Furthermore, in the same manner as described above, two anodes 6 and 6 and two cathodes 7 and 7 are used, and the plated parts a held by the holding member 17 are brought into contact with the cathodes 7 and 7 so as to be sandwiched from both sides thereof. Plating can be performed simultaneously from both sides of the component a.

【0031】前記のような陰極7の片面に設ける絶縁被
膜14は、陰極7の金属線13の全体、すなわち陰極7
の片面全面に施すのが一般的である。これに対して、図
11の例では、中央部の正方形の部分の金属線13のみ
に絶縁被膜14が施され、その周囲の部分には絶縁被膜
14が施されておらず、その部分は両面側が導体である
金属線13が露出している。この陰極7の片面側の金属
線13に施される絶縁被膜14を形成する領域は、陰極
7の全体形状の如何に係わらず、図11に示すような正
方形の他、矩形、円形、或いは楕円形等、必要に応じて
適宜な形状をとることができる。さらに、この図11の
例のように、陰極7の片面の中央部のみに絶縁被膜14
を設けるのではなく、陰極7の片面の周辺部から中央部
にいくに従って、絶縁被膜14の被覆比率が次第に高く
なるようにしてもよい。
The insulating film 14 provided on one side of the cathode 7 as described above covers the entire metal wire 13 of the cathode 7, that is, the cathode 7
Is generally applied to the entire surface on one side. On the other hand, in the example of FIG. 11, only the metal wire 13 in the central square portion is provided with the insulating coating 14, and the surrounding portion is not provided with the insulating coating 14. The metal wire 13 whose side is a conductor is exposed. Regardless of the overall shape of the cathode 7, the region where the insulating film 14 is formed on the metal wire 13 on one side of the cathode 7 is not only a square as shown in FIG. An appropriate shape such as a shape can be taken as needed. Further, as shown in the example of FIG.
Instead, the coating ratio of the insulating coating 14 may be gradually increased from the peripheral portion to the central portion on one surface of the cathode 7.

【0032】[0032]

【実施例】次に、本発明のより具体的な実施例につい
て、具体的な数値をあげならがら詳細に説明する。 (実施例1)図1に示すような小物部品メッキ装置を使
用し、図2に示すように、保持部材17で保持されたメ
ッキ部品aである積層セラミックコンデンサの片方の端
部を陰極7の導体に接触させ、電流密度を500C/d
2 としてメッキ部品aの一端部に半田メッキを施し
た。その後、保持部材17を上下反転させ、保持部材1
7で保持されたメッキ部品aの片方の端部を陰極7の導
体に接触させ、電流密度を500C/dm2 としてメッ
キ部品aの他端部に半田メッキを施した。なお、陰極7
はパンチングメタル製のものを使用し、その片面側の全
面にわたって金属線13に絶縁被膜14を設け、この絶
縁被膜14を設けていない側に前記メッキ部品aの端部
を接触させた。水洗したメッキ部品aから無作為に10
0個取り出し、蛍光X線法に従って、積層セラミックコ
ンデンサの両端の半田メッキ膜の膜厚を測定したとこ
ろ、その平均値は4.87μmであり、その上下面のメ
ッキ膜の膜厚のばらつき(CV値=標準偏差/平均値)
は12.0%であった。
EXAMPLES Next, more specific examples of the present invention will be described in detail while giving specific numerical values. (Example 1) Using a small component plating apparatus as shown in FIG. 1, as shown in FIG. 2, one end of a multilayer ceramic capacitor which is a plated component a held by a holding member 17 is connected to a cathode 7. Contact with the conductor and set the current density to 500 C / d
One end of the plated component a was solder-plated as m 2 . After that, the holding member 17 is turned upside down,
One end of the plated component a held by 7 was brought into contact with the conductor of the cathode 7, and the other end of the plated component a was subjected to solder plating at a current density of 500 C / dm 2 . The cathode 7
Is made of punched metal, an insulating coating 14 is provided on the metal wire 13 over the entire surface on one side, and the end of the plated component a is brought into contact with the side where the insulating coating 14 is not provided. 10 randomly from the washed parts a
When the thickness of the solder plating film at both ends of the multilayer ceramic capacitor was measured according to the fluorescent X-ray method, the average value was 4.87 μm, and the variation in the thickness of the plating film on the upper and lower surfaces (CV) was measured. (Value = standard deviation / average value)
Was 12.0%.

【0033】(実施例2)前記と同じ図1で示すような
小物部品メッキ装置を使用したが、陽極6、6と陰極
7、7を2つずつ使用し、図6で示すように、保持部材
17で保持されたメッキ部品aである積層セラミックコ
ンデンサを挟むようにして、その両端を陰極7、7に同
時に接触させ、その両側に陽極6、6を対向させた。そ
して、電流密度を500C/dm2 としてメッキ部品a
の両端に半田メッキを施した。陰極7はパンチングメタ
ル製のものを使用し、その金属線13の片側全面に絶縁
被膜を設け、この絶縁被膜14を設けていない側に前記
メッキ部品aの端部を接触させた。水洗したメッキ部品
aから無作為に100個取り出し、蛍光X線法に従っ
て、積層セラミックコンデンサの両端の半田メッキ膜の
膜厚を測定したところ、その平均値は4.73μmであ
り、メッキ膜のばらつき(CV値=標準偏差/平均値)
は12.2%であった。
(Example 2) The same small component plating apparatus as shown in FIG. 1 was used, but two anodes 6, 6 and two cathodes 7, 7 were used, and as shown in FIG. Both ends of the laminated ceramic capacitor, which is the plated component a held by the member 17, were simultaneously contacted with the cathodes 7, 7, and the anodes 6, 6 were opposed to both sides thereof. Then, the current density is set to 500 C / dm 2 and the plated component a
Were plated at both ends. The cathode 7 was made of a punched metal, and an insulating coating was provided on the entire surface of one side of the metal wire 13, and the end of the plated component a was brought into contact with the side where the insulating coating 14 was not provided. When 100 pieces were taken out at random from the washed plated parts a and the thickness of the solder plating film at both ends of the multilayer ceramic capacitor was measured according to the fluorescent X-ray method, the average value was 4.73 μm, and the variation of the plating film was found. (CV value = standard deviation / average value)
Was 12.2%.

【0034】(実施例3)前記実施例2において、メッ
キ部品aである積層セラミックコンデンサを保持した保
持部材17を縦に配置し、これを挟むように、陰極7、
7及び陽極6、6を対向配置したものを3組メッキ液1
1に浸漬し、電流密度を500C/dm2としてメッキ
部品a両端に半田メッキを施した。陰極7はパンチング
メタル製のものを使用し、その金属線13の片側全面に
絶縁被膜を設け、この絶縁被膜14を設けていない側に
前記メッキ部品aの端部を接触させた。水洗したメッキ
部品aから無作為に100個取り出し、蛍光X線法に従
って、積層セラミックコンデンサの両端の半田メッキ膜
の膜厚を測定したところ、その平均値は4.70μmで
あり、メッキ膜のばらつき(CV値=標準偏差/平均
値)は12.1%であった。その上下面のメッキ膜の膜
厚の平均の比は、90%であった。
(Embodiment 3) In the embodiment 2, the holding member 17 holding the multilayer ceramic capacitor as the plated component a is vertically arranged, and the cathode 7 and the cathode 7 are sandwiched therebetween.
7 and anodes 6 and 6 are arranged in opposition.
1 was plated at a current density of 500 C / dm 2 at both ends of the plated component a. The cathode 7 was made of a punched metal, and an insulating coating was provided on the entire surface of one side of the metal wire 13, and the end of the plated component a was brought into contact with the side where the insulating coating 14 was not provided. When 100 pieces were taken out at random from the washed plating part a and the thickness of the solder plating film at both ends of the multilayer ceramic capacitor was measured according to the fluorescent X-ray method, the average value was 4.70 μm, and the variation of the plating film was found. (CV value = standard deviation / average value) was 12.1%. The average ratio of the thicknesses of the plating films on the upper and lower surfaces was 90%.

【0035】(実施例4)図1で示すような小物部品メ
ッキ装置を使用し、図7〜図10に示すように、保持部
材17で保持されたメッキ部品aである積層セラミック
コンデンサの片方の側部を陰極7の導体に接触させ、電
流密度を500C/dm2 としてメッキ部品aの一端部
に半田メッキを施した。その後、保持部材17を上下反
転させ、保持部材17で保持されたメッキ部品aの片方
の側部を陰極7の導体に接触させ、電流密度を500C
/dm2 としてメッキ部品aの他端部に半田メッキを施
した。なお、陰極7はパンチングメタル製のものを使用
し、その片面側の全面にわたって金属線13に絶縁被膜
14を設け、この絶縁被膜14を設けていない側に前記
メッキ部品aの端部を接触させた。水洗したメッキ部品
aから無作為に100個取り出し、蛍光X線法に従っ
て、積層セラミックコンデンサの両端の半田メッキ膜の
膜厚を測定したところ、その平均値は4.61μmであ
り、メッキ膜のばらつき(CV値=標準偏差/平均値)
は12.0%であった。
(Embodiment 4) Using a small component plating apparatus as shown in FIG. 1, as shown in FIGS. 7 to 10, one side of a multilayer ceramic capacitor which is a plated component a held by a holding member 17 is used. The side portion was brought into contact with the conductor of the cathode 7, and the current density was set to 500 C / dm 2 , and one end of the plated component a was subjected to solder plating. Thereafter, the holding member 17 is turned upside down, and one side of the plated component a held by the holding member 17 is brought into contact with the conductor of the cathode 7, and the current density is set to 500C.
/ Dm 2 , the other end of the plated component a was plated with solder. The cathode 7 is made of a punched metal, and an insulating coating 14 is provided on the metal wire 13 over the entire surface on one side, and the end of the plated component a is brought into contact with the side where the insulating coating 14 is not provided. Was. When 100 pieces were taken out at random from the washed plating part a and the thickness of the solder plating film at both ends of the multilayer ceramic capacitor was measured according to the fluorescent X-ray method, the average value was 4.61 μm, and the variation of the plating film was found. (CV value = standard deviation / average value)
Was 12.0%.

【0036】(比較例)陽極6を上に、絶縁被膜を設け
ていない陰極7を下に配置し、前記実施例1と同じ条件
でメッキを行った。水洗したメッキ部品aから無作為に
100個取り出し、蛍光X線法に従って、積層セラミッ
クコンデンサの両端の半田メッキ膜の膜厚を測定したと
ころ、その平均値は4.50μmであり、メッキ膜のば
らつき(CV値=標準偏差/平均値)は18.0%であ
った。
(Comparative Example) An anode 6 was placed on the upper side, and a cathode 7 without the insulating coating was placed below, and plating was performed under the same conditions as in the first embodiment. When 100 pieces were taken out at random from the washed plated part a and the thickness of the solder plating film at both ends of the multilayer ceramic capacitor was measured according to the fluorescent X-ray method, the average value was 4.50 μm, and the variation of the plating film was found. (CV value = standard deviation / average value) was 18.0%.

【0037】[0037]

【発明の効果】以上説明した通り、本発明によれば、メ
ッキ物の各部位や各メッキ物間のメッキ膜の膜厚のばら
つきが小さく、均一な膜厚のメッキ膜を施すことが可能
となる。これによって、メッキ部品の品質の向上を図る
ことができ、製品の品質の向上、歩留まりの向上などを
図ることができる。さらに、複数のメッキ部品が保持部
材によって保持されるので、メッキ工程におけるメッキ
部品の反転等はもちろん、その前後の工程におけるメッ
キ部品の取扱いや搬送が容易になり、メッキ工程の省力
化、自動化を容易にすることができる。
As described above, according to the present invention, it is possible to form a plating film having a uniform thickness with a small variation in the thickness of the plating film between each part of the plating material and each plating material. Become. Thereby, the quality of the plated component can be improved, and the quality of the product, the yield, and the like can be improved. Furthermore, since a plurality of plated components are held by the holding member, not only the plating components are reversed in the plating process, but also the handling and transport of the plated components in the processes before and after the plating components are facilitated, so that labor and automation of the plating process can be reduced. Can be easier.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明によるメッキ装置の例を示す概略縦断側
面図である。
FIG. 1 is a schematic longitudinal sectional side view showing an example of a plating apparatus according to the present invention.

【図2】同メッキ装置の陽極、陰極及び保持部材の例を
示す要部拡大縦断側面図である。
FIG. 2 is an enlarged vertical sectional side view showing an example of an anode, a cathode, and a holding member of the plating apparatus.

【図3】同メッキ装置の陽極と保持部材の例を示す斜視
図である。
FIG. 3 is a perspective view showing an example of an anode and a holding member of the plating apparatus.

【図4】同メッキ装置の陽極、陰極及び保持部材の例を
示す斜視図である。
FIG. 4 is a perspective view showing an example of an anode, a cathode, and a holding member of the plating apparatus.

【図5】同メッキ装置の保持部材の他の例を示す要部斜
視図である。
FIG. 5 is a perspective view of a main part showing another example of a holding member of the plating apparatus.

【図6】同メッキ装置の陽極、陰極及び保持部材の他の
配置の例を示す要部縦断側面図である。
FIG. 6 is a vertical sectional side view of an essential part showing another example of the arrangement of the anode, the cathode and the holding member of the plating apparatus.

【図7】同メッキ装置の陰極のとそれに載せる保持部材
の他の例を示す斜視図である。
FIG. 7 is a perspective view showing another example of a cathode of the plating apparatus and a holding member placed on the cathode.

【図8】同メッキ装置の陽極、陰極及びその陰極の上に
載せた保持部材の例を示す斜視図である。
FIG. 8 is a perspective view showing an example of an anode, a cathode, and a holding member placed on the cathode of the plating apparatus.

【図9】同メッキ装置の保持部材の例を示す要部拡大平
面図である。
FIG. 9 is an enlarged plan view of a main part showing an example of a holding member of the plating apparatus.

【図10】図9のA−A…断側面図である。10 is a sectional side view taken along line AA of FIG.

【図11】本発明によるメッキ装置の陰極の他の例を示
す底面図である。
FIG. 11 is a bottom view showing another example of the cathode of the plating apparatus according to the present invention.

【符号の説明】[Explanation of symbols]

2 メッキ浴槽 6 陽極 7 陰極 10 電源 11 メッキ液 13 金属線 14 絶縁被膜 17 保持部材 19 メッキ液通路 a メッキ部品 2 Plating bath 6 Anode 7 Cathode 10 Power supply 11 Plating solution 13 Metal wire 14 Insulating coating 17 Holding member 19 Plating solution passage a Plating component

Claims (10)

【特許請求の範囲】[Claims] 【請求項1】 メッキ液(11)を溜めるメッキ浴槽
(2)と、このメッキ浴槽(2)のメッキ液(11)に
浸漬され、メッキを施すメッキ部品(a)が接触する陰
極(7)と、メッキ浴槽(2)のメッキ液(11)に浸
漬された陽極(6)と、これら陽極(6)と陰極(7)
とに電流を流す電源(10)とを有する小物部品メッキ
装置において、前記陰極(7)は、メッキ液が通過可能
な薄板状のものからなり、メッキ部品(a)が板状の保
持部材(17)により保持されると共に、保持部材(1
7)から突出したメッキ部品(a)の一部が前記陰極
(7)の導体に接触するよう保持部材(17)が配置さ
れていることを特徴とする小物部品メッキ装置。
A plating bath (2) for storing a plating solution (11) and a cathode (7) immersed in the plating solution (11) of the plating bath (2) and contacting a plating component (a) to be plated. And an anode (6) immersed in a plating solution (11) of a plating bath (2), and these anode (6) and cathode (7)
And a power supply (10) for supplying a current to the cathode, the cathode (7) is made of a thin plate through which a plating solution can pass, and the plating component (a) is a plate-like holding member ( 17) and the holding member (1)
A small component plating apparatus, wherein a holding member (17) is arranged so that a part of the plated component (a) protruding from the component (7) comes into contact with the conductor of the cathode (7).
【請求項2】 メッキ液(11)が通過可能な薄板状の
陰極(7)は、メッシュ状、多孔質状、不織布状の何れ
かであって、導電性を有するものであることを特徴とす
る請求項1に記載の小物部品メッキ装置。
2. A thin plate-like cathode (7) through which a plating solution (11) can pass is any one of a mesh, a porous, and a non-woven fabric, and has conductivity. The small component plating apparatus according to claim 1.
【請求項3】 メッキ部品(a)は、そのメッキを施そ
うとする少なくとも一部が保持部材(17)から突出
し、この保持部材(17)から突出したメッキ部品
(a)の一部が、前記陰極(7)の片面でその導体に接
触していることを特徴とする請求項1または2に記載の
小物部品メッキ装置。
3. The plated component (a) has at least a portion to be plated projecting from the holding member (17), and a part of the plated component (a) projecting from the holding member (17) is 3. The small component plating apparatus according to claim 1, wherein one side of the cathode is in contact with the conductor.
【請求項4】 メッキ部品(a)は、そのメッキを施そ
うとする両端のそれぞれが保持部材(17)の両面から
突出し、この保持部材(17)から突出したメッキ部品
(a)の一方の端部が前記陰極(7)の片面でその導体
に接触していることを特徴とする請求項1〜3の何れか
に記載の小物部品メッキ装置。
4. The plated component (a) has both ends to be plated projecting from both surfaces of the holding member (17), and one of the plated components (a) projecting from the holding member (17). The small component plating apparatus according to any one of claims 1 to 3, wherein an end portion is in contact with the conductor on one surface of the cathode (7).
【請求項5】 メッキ部品(a)は、そのメッキを施そ
うとする両端のそれぞれが保持部材(17)の両面から
突出し、この保持部材(17)から突出したメッキ部品
(a)の両端部が、これらメッキ部品(a)を挟むよう
にして配置された一対の陰極(7)、(7)の導体にそ
れぞれ接触していることを特徴とする請求項1〜3の何
れかに記載の小物部品メッキ装置。
5. The plating component (a) has both ends to be plated projecting from both sides of the holding member (17), and both ends of the plating component (a) projecting from the holding member (17). The small parts according to any one of claims 1 to 3, wherein the small parts contact the conductors of a pair of cathodes (7) and (7) arranged so as to sandwich these plated parts (a). Plating equipment.
【請求項6】 保持部材(17)は、それにメッキ部品
(a)を保持する位置に隣接して、両面に貫通する通孔
状のメッキ液通路(19)を有することを特徴とする請
求項1〜5の何れかに記載の小物部品メッキ装置。
6. The holding member (17) has a through-hole-shaped plating solution passage (19) penetrating on both sides thereof, adjacent to a position for holding the plating component (a). A small component plating apparatus according to any one of claims 1 to 5.
【請求項7】 メッキ液(11)を溜めたメッキ浴槽
(2)に陰極(7)と陽極(8)とを浸漬すると共に、
メッキ部品(a)を陰極(7)に接触させると共に、前
記陽極(6)と陰極(7)とに電流を流し、メッキ部品
(a)にメッキを析出させる小物部品メッキ方法におい
て、メッキ液が通過可能な薄板状のものであって、メッ
キ部品(a)を保持部材(17)により保持すると共
に、この保持部材(17)から突出されたメッキ部品
(a)の一部を、メッキ液が通過可能な薄板状の陰極
(7)の導体に接触させ、この状態で前記陽極(6)と
陰極(7)とに電流を流し、同メッキ部品(a)にメッ
キを析出させることを特徴とする小物部品メッキ方法。
7. A cathode (7) and an anode (8) are immersed in a plating bath (2) containing a plating solution (11).
In the method of plating a small component, in which the plated component (a) is brought into contact with the cathode (7) and current is applied to the anode (6) and the cathode (7) to deposit plating on the plated component (a), The plating component (a) is a sheet-like plate that can pass through, and holds the plating component (a) by the holding member (17), and a part of the plating component (a) protruding from the holding member (17) is coated with a plating solution. The electrode is brought into contact with a conductor of a thin plate-like cathode (7) that can pass therethrough, and in this state, a current is applied to the anode (6) and the cathode (7) to deposit plating on the plated part (a). Small parts plating method.
【請求項8】 メッキ部品(a)が陰極(7)、(7)
に対して、その面方向に相対移動させられることを特徴
とする請求項7に記載の小物部品メッキ方法。
8. The plated part (a) is a cathode (7), (7)
The small component plating method according to claim 7, wherein the component is relatively moved in a plane direction of the small component.
【請求項9】 メッキ部品(a)は、そのメッキを施そ
うとする両端のそれぞれが保持部材(17)の両面から
突出し、まず、保持部材(17)から突出したメッキ部
品(a)の一方の端部を前記陰極(7)の片面でその導
体に接触させてメッキを行ったあと、保持部材(17)
ごとメッキ部品(a)を反転し、次に、他方の端部を前
記陰極(7)の片面でその導体に接触させてメッキを行
うことを特徴とする請求項7または8に記載の小物部品
メッキ方法。
9. The plated component (a) has both ends to be plated projecting from both sides of the holding member (17), and first, one of the plated components (a) projecting from the holding member (17). The end of the cathode (7) is contacted with the conductor on one side of the cathode (7) to perform plating, and then the holding member (17)
9. The small component according to claim 7, wherein the plating is performed by inverting the entire plated component, and then performing plating by bringing the other end into contact with the conductor on one surface of the cathode. Plating method.
【請求項10】 メッキ部品(a)は、そのメッキを施
そうとする両端のそれぞれが保持部材(17)の両面か
ら突出し、この保持部材(17)から突出したメッキ部
品(a)の両端部が、これらメッキ部品(a)を挟むよ
うにして配置された一対の陰極(7)、(7)の導体に
それぞれ接触させられ、メッキ部品(a)の両端部に同
時にメッキが施されることを特徴とする請求項7または
8に記載の小物部品メッキ方法。
10. Both ends of the plated component (a) to be plated project from both sides of the holding member (17), and both ends of the plated component (a) projecting from the holding member (17). Are brought into contact with conductors of a pair of cathodes (7) and (7) arranged so as to sandwich the plated component (a), and both ends of the plated component (a) are simultaneously plated. 9. The small component plating method according to claim 7, wherein:
JP31655597A 1997-10-31 1997-10-31 Apparatus and method for plating small parts Expired - Fee Related JP3229259B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP31655597A JP3229259B2 (en) 1997-10-31 1997-10-31 Apparatus and method for plating small parts

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP31655597A JP3229259B2 (en) 1997-10-31 1997-10-31 Apparatus and method for plating small parts

Publications (2)

Publication Number Publication Date
JPH11131298A true JPH11131298A (en) 1999-05-18
JP3229259B2 JP3229259B2 (en) 2001-11-19

Family

ID=18078411

Family Applications (1)

Application Number Title Priority Date Filing Date
JP31655597A Expired - Fee Related JP3229259B2 (en) 1997-10-31 1997-10-31 Apparatus and method for plating small parts

Country Status (1)

Country Link
JP (1) JP3229259B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101667291B1 (en) * 2015-06-30 2016-10-18 주식회사 포스코 Electrodeposition coating apparatus and method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101667291B1 (en) * 2015-06-30 2016-10-18 주식회사 포스코 Electrodeposition coating apparatus and method

Also Published As

Publication number Publication date
JP3229259B2 (en) 2001-11-19

Similar Documents

Publication Publication Date Title
JP2000232078A (en) Plating method and apparatus
US10480092B2 (en) Apparatus and method of contact electroplating of isolated structures
JP6222145B2 (en) Metal film forming apparatus and film forming method
US6979391B1 (en) Method and device for the electrolytic treatment of electrically conducting structures which are insulated from each other and positioned on the surface of electrically insulating film materials and use of the method
JPH11246999A (en) Plating method for wafer and apparatus therefor
US3397126A (en) Plating of small parts
JP3229259B2 (en) Apparatus and method for plating small parts
US4997529A (en) Electrolytic process and apparatus for forming pattern on surface of metallic object
JP2000355797A (en) Jig for holding printed circuit board and plating device
US4877493A (en) Dielectric block plating process
JP3229261B2 (en) Apparatus and method for plating small parts
JP3229258B2 (en) Apparatus and method for plating small parts
JPH11131297A (en) Device and method for plating small article
JPH11131299A (en) Device and method for plating small article
JP3329056B2 (en) Plating method and apparatus
KR20110097225A (en) Apparatus for plate substrate
JP2005264339A (en) Electrolytic treatment method and apparatus therefor
JPS6277494A (en) Plating device for printed circuit board
JP2002235192A (en) Method and apparatus for electrolytic treatment
JPS6047450A (en) Plating method of electrode for leadless diode with solder
JPH04137541A (en) Forming method for protruding electrode
JPH0536698A (en) Jig for plating wafer
JPH08311698A (en) Device for electroplating semiconductor wafer
JPS62108563A (en) Plating treater
JPH05230688A (en) Electroplating method

Legal Events

Date Code Title Description
R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20080907

Year of fee payment: 7

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20080907

Year of fee payment: 7

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20090907

Year of fee payment: 8

LAPS Cancellation because of no payment of annual fees