JPH11126726A - Ceramic capacitor and manufacture therefor - Google Patents
Ceramic capacitor and manufacture thereforInfo
- Publication number
- JPH11126726A JPH11126726A JP30963097A JP30963097A JPH11126726A JP H11126726 A JPH11126726 A JP H11126726A JP 30963097 A JP30963097 A JP 30963097A JP 30963097 A JP30963097 A JP 30963097A JP H11126726 A JPH11126726 A JP H11126726A
- Authority
- JP
- Japan
- Prior art keywords
- sio
- mzs
- mixture
- dielectric ceramic
- main component
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Compositions Of Oxide Ceramics (AREA)
- Ceramic Capacitors (AREA)
- Inorganic Insulating Materials (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】この発明は、１ＭＨｚ程度の
周波領域での使用に特に適した、０．１〜２０ｐＦ程度
の低容量型の磁器コンデンサとその製造方法に関するも
のである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a low capacitance type ceramic capacitor of about 0.1 to 20 pF, which is particularly suitable for use in a frequency range of about 1 MHz, and a method of manufacturing the same.
【０００２】[0002]
【従来の技術】この種の低容量型の磁器コンデンサの誘
電体層の材料としては、例えば、珪酸マグネシウム・亜
鉛（ＭＺＳ）、アルミナ（Ａｌ2 Ｏ3 ）及びチタン酸ス
トロンチウム（ＳｒＴｉＯ3 ）を主成分とする混合物を
９５０〜１１００℃程度の温度で焼成して形成した誘電
体磁器組成物がある。ここで、ＭＺＳは、ＭｇＯ、Ｚｎ
Ｏ及びＳｉＯ2 からなる混合物を９００〜１２００℃程
度の温度で仮焼することにより合成した化合物である。2. Description of the Related Art As a material of a dielectric layer of a low-capacity type ceramic capacitor of this type, for example, magnesium zinc silicate (MZS), alumina (Al 2 O 3 ), and strontium titanate (SrTiO 3 ) are mainly used. There is a dielectric ceramic composition formed by firing a mixture as a component at a temperature of about 950 to 1100 ° C. Here, MZS is MgO, Zn
This is a compound synthesized by calcining a mixture of O and SiO 2 at a temperature of about 900 to 1200 ° C.
【０００３】[0003]
【発明が解決しようとする課題】ところで、ＭｇＯ、Ｚ
ｎＯ及びＳｉＯ2 からなる混合物を９００〜１２００℃
程度の温度で仮焼することによりＭＺＳを合成した場
合、得られた磁器コンデンサのＱ値が信頼性試験後に大
幅に劣化することがあるという問題点があった。ここ
で、信頼性試験とは、磁器コンデンサに過負荷を掛けた
後の電気的特性の低下を調べる試験で、例えば、１２５
℃のオイル中で試料に６００ＶのＤＣを印加し、２４時
間後の静電容量Ｃ及び１ＭＨｚでのＱ値を求めるという
方法で行なわれる。However, MgO, Z
a mixture of nO and SiO 2 at 900 to 1200 ° C.
When MZS is synthesized by calcining at about the temperature, there is a problem that the Q value of the obtained ceramic capacitor may be significantly deteriorated after the reliability test. Here, the reliability test is a test for examining a decrease in electrical characteristics after an overload is applied to a porcelain capacitor.
The method is carried out by applying a DC of 600 V to the sample in oil at ℃ ° C. and determining the capacitance C after 24 hours and the Q value at 1 MHz.
【０００４】この発明は、信頼性試験後にＱ値の劣化が
ない磁器コンデンサとその製造方法を提供することを目
的とする。[0004] It is an object of the present invention to provide a porcelain capacitor in which the Q value does not deteriorate after a reliability test and a method of manufacturing the same.
【０００５】[0005]
【課題を解決するための手段】本発明に係る磁器コンデ
ンサは、誘電体磁器組成物からなる１又は２以上の誘電
体磁器層と、該誘電体磁器層を挟持している少なくとも
２以上の内部電極とを備え、前記誘電体磁器組成物が、
珪酸マグネシウム・亜鉛（ＭＺＳ）とＡｌ2 Ｏ3 とＳｒ
ＴｉＯ3 とを含有する混合物の焼結体からなり、該ＭＺ
Ｓ中に含まれているＳｉＯ2 が結晶質のＳｉＯ2 のみか
らなるものである。According to the present invention, there is provided a ceramic capacitor comprising one or more dielectric ceramic layers made of a dielectric ceramic composition and at least two internal layers sandwiching the dielectric ceramic layer. And an electrode, wherein the dielectric ceramic composition comprises
Magnesium silicate zinc (MZS), Al 2 O 3 and Sr
A sintered body of a mixture containing TiO 3 and the MZ
The SiO 2 contained in S consists only of crystalline SiO 2 .
【０００６】また、本発明に係る磁器コンデンサの製造
方法は、ＭｇＯ、ＺｎＯ及びＳｉＯ2 を混合して仮焼す
ることにより珪酸マグネシウム・亜鉛（ＭＺＳ）を形成
する工程と、この工程で得られたものにＡｌ2 Ｏ3 とＳ
ｒＴｉＯ3 を加えて混合する工程と、この工程で得られ
た混合物からなる１又は２以上の未焼成誘電体磁器層を
少なくとも２以上の導電性ペースト膜で挟持させてなる
積層体を形成する工程と、該積層体を焼成する工程とを
備え、前記ＭＺＳを形成する工程で原料として使用され
たＳｉＯ2 が結晶質のＳｉＯ2 のみからなるものであ
る。Further, a method for manufacturing a porcelain capacitor according to the present invention comprises the steps of mixing MgO, ZnO and SiO 2 and calcining to form magnesium zinc silicate (MZS), and the steps obtained in this step. Al 2 O 3 and S
a step of adding and mixing rTiO 3 , and a step of forming a laminate by sandwiching one or more unfired dielectric ceramic layers made of the mixture obtained in this step with at least two or more conductive paste films And firing the laminate, wherein the SiO 2 used as a raw material in the step of forming the MZS comprises only crystalline SiO 2 .
【０００７】ここで、結晶質のＳｉＯ2 のみからなると
は、ＳｉＯ2 の全てが結晶質ＳｉＯ2 からなる場合のみ
ならず、不純物程度の非晶質ＳｉＯ2 を含む場合を含む
意味である。ＭｇＯとＺｎＯに結晶質ＳｉＯ2 を過剰に
混合して仮焼すると、これらが固相反応してＭＺＳが生
成し、結晶質のＳｉＯ2 の一部が未反応の状態で残る。
仮焼温度は９００〜１２００℃、仮焼時間は２〜４時間
が好ましい。前記結晶質のＳｉＯ2 の平均一次粒子径は
２μｍ以下が好ましい。[0007] Here, only the from SiO 2 crystalline, not only all the SiO 2 is made of a crystalline SiO 2, is meant to include a case containing amorphous SiO 2 of about impurity. When MgO and ZnO are excessively mixed with crystalline SiO 2 and calcined, they are reacted in a solid phase to generate MZS, and a part of the crystalline SiO 2 remains unreacted.
The calcination temperature is preferably 900 to 1200 ° C., and the calcination time is preferably 2 to 4 hours. The average primary particle diameter of the crystalline SiO 2 is preferably 2 μm or less.
【０００８】また、前記誘電体磁器組成物又は前記混合
物は、一般式 Ｘ（Ｍｇa Ｚｎ(1-a) ）X ＳｉＯX+2 −ＹＡｌ2 Ｏ3 −
ＺＳｒＴｉＯ3 で表される主成分と、Ｎｂ，Ｔａ及びＷから選択された
１種又は２種以上の元素の化合物からなる添加成分を含
有し、前記主成分を構成する珪酸マグネシウム・亜鉛
（ＭＺＳ）、Ａｌ2 Ｏ3 及びＳｒＴｉＯ3 のモル比
［％］が、これら３種の化合物のモル比（Ｘ，Ｙ，Ｚ）
を示す３成分組成図、すなわち図１に於いて、 Ａ（９４．９， ０．１， ５．０） Ｂ（８５．０， １０．０， ５．０） Ｃ（６５．０， １０．０， ２５．０） Ｄ（６５．０， ０．１， ３４．９） で示される各点Ａ〜Ｄを頂点とする多角形で囲まれた範
囲にあり、前記主成分を表す一般式中のａ及びｘの値
が、 ０．１≦ａ≦０．８ ０．６７≦ｘ≦１．５ の範囲にあり、前記添加成分がＮｂＯ5/2 ，ＴａＯ5/2
又はＷＯ3 に換算して０．０１〜０．２モル％含有され
ているものが特に好ましい。Further, the dielectric ceramic composition or the mixture of the general formula X (Mg a Zn (1- a)) X SiO X + 2 -YAl 2 O 3 -
Magnesium zinc silicate (MZS) containing a main component represented by ZSrTiO 3 and an additive component comprising a compound of one or more elements selected from Nb, Ta and W, and constituting the main component , Al 2 O 3 and SrTiO 3 , the molar ratio [%] of these three compounds is (X, Y, Z).
1, ie, A (94.9, 0.1, 5.0), B (85.0, 10.0, 5.0) and C (65.0, 10.3) in FIG. 0, 25.0) D (65.0, 0.1, 34.9) in a range surrounded by a polygon having vertices at each of the points A to D, and in the general formula representing the main component, Are within the range of 0.1 ≦ a ≦ 0.8 0.67 ≦ x ≦ 1.5, and the additive component is NbO 5/2 , TaO 5/2
Or those containing 0.01 to 0.2 mol% in terms of WO 3 is particularly preferred.
【０００９】ここで、ＭＺＳのモル比［％］を上記の範
囲としたのは、ＭＺＳのモル比［％］が上記の範囲を逸
脱すると、１１００℃以下の焼成で緻密な焼結体が得ら
れなくなるか、誘電率εr が１５より大きくなり、温度
係数ＴＣＣもマイナス側に大きくなり過ぎるからであ
る。Here, the reason why the molar ratio [%] of MZS falls within the above range is that if the molar ratio [%] of MZS deviates from the above range, a dense sintered body can be obtained by firing at 1100 ° C. or lower. or it is no longer, since the dielectric constant epsilon r is larger than 15, even if the temperature coefficient TCC too large on the negative side.
【００１０】また、Ａｌ2 Ｏ3 のモル比［％］を上記の
範囲としたのは、Ａｌ2 Ｏ3 のモル比［％］が上記の範
囲を逸脱すると、１１００℃以下の焼成で緻密な焼結体
が得られなくなるからである。Further, the molar ratio of Al 2 O 3 a [%] was set to the above range, the molar ratio of Al 2 O 3 [%] is outside the above range, dense in firing 1100 ° C. or less This is because a sintered body cannot be obtained.
【００１１】また、ＳｒＴｉＯ3 のモル比［％］を上記
の範囲としたのは、ＳｒＴｉＯ3 のモル比［％］が上記
の範囲より大きくなると、誘電率εr が１５より大きく
なったり、温度係数ＴＣＣがマイナス側に大きくなり過
ぎ、また、ＳｒＴｉＯ3 のモル比［％］が上記の範囲よ
り小さくなると、１１００℃以下の焼成で緻密な焼結体
が得られなくなるからである。Further, the molar ratio of SrTiO 3 the [%] was set to the above range, the molar ratio of SrTiO 3 [%] is greater than the above range, or the dielectric constant epsilon r is greater than 15, the temperature This is because if the coefficient TCC is too large on the negative side and the molar ratio [%] of SrTiO 3 is smaller than the above range, a dense sintered body cannot be obtained by firing at 1100 ° C. or less.
【００１２】また、ａの値を上記の範囲としたのは、ａ
の値が上記の範囲より大きくなると、１１００℃以下の
焼成で緻密な焼結体が得られなくなり、ａの値が上記の
範囲より小さくなると、焼結体の内部にポアが多く生成
し、Ｑ値が１０００より小さくなるからである。The reason why the value of a is set in the above range is that a
Is larger than the above range, a dense sintered body cannot be obtained by firing at 1100 ° C. or less, and when the value of a is smaller than the above range, many pores are generated inside the sintered body and Q This is because the value becomes smaller than 1000.
【００１３】また、ｘの値を上記の範囲としたのは、ｘ
の値が上記の範囲より大きくなると、１１００℃の焼成
で緻密な焼結体が得られなくなり、ｘの値が上記の範囲
より小さくなると、焼成の際の適正温度幅が非常に狭く
なって融着し易くなり、焼結体中にポアが多く生成し、
Ｑ値が１０００より小さくなるからである。The reason why the value of x is in the above range is that x
If the value of x is larger than the above range, a dense sintered body cannot be obtained by firing at 1100 ° C, and if the value of x is smaller than the above range, the appropriate temperature range during firing becomes extremely narrow, and Easy to wear, many pores are generated in the sintered body,
This is because the Q value becomes smaller than 1000.
【００１４】前記添加成分をＮｂＯ5/2 ，ＴａＯ5/2 又
はＷＯ3 に換算して０．０１〜０．２モル％としたの
は、０．０１モル％より少ないと、リーク電流の改善効
果がなく、０．２モル％を越えると１１００℃以下の焼
成で、緻密な焼結体が得られなくなるからである。これ
らの添加成分は単独で添加しても、混合状態で添加して
も同様の効果がある。The reason why the content of the additive is 0.01 to 0.2 mol% in terms of NbO 5/2 , TaO 5/2 or WO 3 is that when the content is less than 0.01 mol%, the leakage current is improved. This is because there is no effect, and if it exceeds 0.2 mol%, a dense sintered body cannot be obtained by firing at 1100 ° C. or less. The same effect can be obtained by adding these additives alone or in a mixed state.
【００１５】ＭＺＳ，Ａｌ2 Ｏ3 及びＳｒＴｉＯ3 から
なる混合物の仮焼は行っても、行わなくても、所望の特
性は得られるが、仮焼の有無で電気的特性は変化する。
ただし、仮焼は添加成分と主成分、或いは添加成分同志
で反応が起こり、結晶系が変化し、急激に収縮が生じた
り、収縮率が大きくなる場合に有効である。すなわち、
デラミネーション、クラック等の構造欠陥の抑制に有効
である。この仮焼は７００〜９００℃で２〜４時間が好
ましい。また、前記積層体は９５０〜１１００℃で１〜
４時間焼成するのが好ましい。The desired characteristics can be obtained with or without calcination of the mixture composed of MZS, Al 2 O 3 and SrTiO 3 , but the electrical characteristics change depending on the presence or absence of calcination.
However, the calcination is effective when a reaction occurs between the added component and the main component or between the added components, the crystal system changes, and sudden shrinkage occurs or the shrinkage ratio increases. That is,
It is effective in suppressing structural defects such as delamination and cracks. This calcination is preferably performed at 700 to 900 ° C. for 2 to 4 hours. In addition, the laminate is 950 to 1100 ° C.
It is preferable to bake for 4 hours.
【００１６】内部電極の材料としてはＰｄを使用するこ
とができるが、Ａｇ，Ｐｔを用いてもよい。磁器コンデ
ンサは単層タイプのもの及び積層タイプのもののいずれ
にも適用でき、更には、前記積層コンデンサを構成要素
の一つとする複合部品にも適用できる。また、この発明
に係る磁器コンデンサは、１ＭＨｚ程度の周波領域で
も、また、数１００ＭＨｚ〜数ＧＨｚの周波領域でも使
用できる。Although Pd can be used as the material of the internal electrode, Ag and Pt may be used. The porcelain capacitor can be applied to both a single-layer type and a multilayer type, and further to a composite part having the multilayer capacitor as one of the constituent elements. The porcelain capacitor according to the present invention can be used in a frequency range of about 1 MHz or in a frequency range of several hundred MHz to several GHz.
【００１７】[0017]
【発明の実施の形態】まず、出発原料として、ＭｇＯ、
ＺｎＯ及びＳｉＯ2 を表１に示すような配合比率（ｍｏ
ｌ％）になるように秤量し、これらの化合物をボールミ
ルに入れ、湿式で１５時間粉砕混合し、これらの混合物
からな泥漿を得た。ここで、ＳｉＯ2は、平均１次粒子
径（ＳＥＭによる）が０．１μｍの非晶質シリカと、平
均１次粒子径（ＳＥＭによる）が１．５μｍの結晶質シ
リカを使用した。そして、この泥漿をボールミルから取
り出して濾過し、ケーキの部分を熱風式乾燥器に入れ、
１５０℃で充分に乾燥させ、上記化合物からなる混合物
の粉末を得た。BEST MODE FOR CARRYING OUT THE INVENTION First, MgO,
The mixing ratio (mo) of ZnO and SiO 2 as shown in Table 1
1%), and these compounds were placed in a ball mill and pulverized and mixed in a wet system for 15 hours to obtain a slurry from these mixtures. Here, as SiO 2 , amorphous silica having an average primary particle diameter (by SEM) of 0.1 μm and crystalline silica having an average primary particle diameter (by SEM) of 1.5 μm were used. Then, the slurry is taken out of the ball mill and filtered, and the cake is put in a hot air dryer,
The mixture was sufficiently dried at 150 ° C. to obtain a powder of a mixture comprising the above compounds.
【００１８】[0018]
【表１】 [Table 1]
【００１９】次に、この混合物の粉末を加熱炉に入れ、
大気中において１１００℃で３時間仮焼し、混合物を構
成している化合物を相互に反応させ、ＭＺＳを得た。こ
のＭＺＳは（Ｍｇ0.8 Ｚｎ0.2 ）ＳｉＯ3 となるものと
考えられる。そして、このＭＺＳをボールミルに入れ、
湿式で充分に粉砕してＭＺＳの泥漿を形成した。更に、
この泥漿を取り出して濾過し、ケーキの部分を乾燥器に
入れ、１５０℃で充分に乾燥させ、ＭＺＳの乾燥粉末を
得た。Next, the powder of this mixture is placed in a heating furnace,
The mixture was calcined at 1100 ° C. for 3 hours in the air to cause the compounds constituting the mixture to react with each other to obtain MZS. This MZS is considered to be (Mg 0.8 Zn 0.2 ) SiO 3 . And put this MZS in the ball mill,
Wet milling was sufficient to form a slurry of MZS. Furthermore,
The slurry was taken out and filtered, and the cake portion was placed in a drier and dried sufficiently at 150 ° C. to obtain a dry powder of MZS.
【００２０】次に、ＭＺＳ、Ａｌ2 Ｏ3 及びＳｒＴｉＯ
3 を表２に示すような配合比率（ｍｏｌ％）になるよう
に秤量し、これらをボールミルに入れ、湿式で充分に混
合し、これらの混合物からなる泥漿を得た。そして、こ
の泥漿を取り出して濾過し、ケーキの部分を乾燥器に入
れ、１５０℃で充分に乾燥させ、上記化合物からなる混
合物の粉末を得た。Next, MZS, Al 2 O 3 and SrTiO
3 was weighed so as to have a compounding ratio (mol%) as shown in Table 2, and these were put into a ball mill and mixed well by a wet method to obtain a slurry composed of these mixtures. Then, the slurry was taken out and filtered, and the cake portion was put in a drier and dried sufficiently at 150 ° C. to obtain a powder of a mixture comprising the above compounds.
【００２１】[0021]
【表２】 [Table 2]
【００２２】次に、この混合物の粉末に有機溶剤、有機
バインダー、可塑剤等を加えて混合し、上記混合物のス
ラリーを形成し、このスラリーを用い、ドクターブレー
ド法で厚さ４０μｍのセラミックグリーンシートを形成
した。そして、このセラミックグリーンシートにＰｄペ
ーストからなる内部電極パターンを印刷し、このセラミ
ックグリーンシートを交互に１１枚積層・圧着して１０
層の積層体を作成し、得られた積層体を切断して複数の
チップ積層体を得た。Next, an organic solvent, an organic binder, a plasticizer, and the like are added to and mixed with the powder of the mixture to form a slurry of the mixture, and the slurry is used to form a ceramic green sheet having a thickness of 40 μm by a doctor blade method. Was formed. Then, an internal electrode pattern made of a Pd paste is printed on the ceramic green sheets, and eleven ceramic green sheets are alternately laminated and pressure-bonded.
A stack of layers was formed, and the obtained stack was cut to obtain a plurality of chip stacks.
【００２３】次に、このチップ積層体を大気中で加熱
し、まず、セラミックグリーンシート中に含まれている
有機バインダーを燃焼除去させ、その後、１１００℃で
２時間焼成し、チップ積層体を焼結させた。Next, this chip laminate is heated in the air to first burn off the organic binder contained in the ceramic green sheet, and then fire at 1100 ° C. for 2 hours to fire the chip laminate. Tied.
【００２４】次に、チップ積層体の両端部にＡｇペース
トを塗布し、７００℃で１５分間焼き付けて、積層磁器
コンデンサを形成した。この積層磁器コンデンサは、試
料サイズ１．０ｍｍ×０．５ｍｍ×０．５ｍｍ、有効交
差面積０．０５ｍｍ2 、誘電体層１層当たりの厚み３０
μｍである。Next, an Ag paste was applied to both ends of the chip laminate and baked at 700 ° C. for 15 minutes to form a laminated ceramic capacitor. This laminated ceramic capacitor has a sample size of 1.0 mm × 0.5 mm × 0.5 mm, an effective intersection area of 0.05 mm 2 , and a thickness of one dielectric layer of 30 mm.
μm.
【００２５】次に、この積層磁器コンデンサの静電容量
Ｃ及びＱ値を信頼性試験の前後に測定したところ、表３
に示す通りであった。ここで、積層磁器コンデンサの静
電容量Ｃ及びＱ値は、インピーダンスアナライザー（Ｈ
Ｐ４２８４Ａ）を用い、室温・１ＭＨｚ・１Ｖrms の条
件で求めた。また、信頼性試験は、１２５℃のオイル中
で試料に６００ＶのＤＣを印加し、２４時間後の静電容
量Ｃ及びＱ値を求めるという方法で行なった。Next, the capacitances C and Q values of this laminated ceramic capacitor were measured before and after the reliability test.
As shown in FIG. Here, the capacitance C and the Q value of the laminated ceramic capacitor are measured by an impedance analyzer (H
P4284A) at room temperature, 1 MHz, 1 V rms . The reliability test was performed by applying a DC voltage of 600 V to the sample in 125 ° C. oil and calculating the capacitance C and Q value after 24 hours.
【００２６】[0026]
【表３】 [Table 3]
【００２７】以上の結果から、積層磁器コンデンサのＱ
値は、誘電体磁器組成物の原料の１つであるＳｉＯ2 と
して非晶質シリカを用いたものが信頼性試験の後で１２
４３から６０８に低下しているのに対し、結晶質シリカ
を用いたものは信頼性試験の後で１４５０から１４７８
とほゞ同じ水準を保っていることがわかる。From the above results, the Q of the laminated ceramic capacitor is
The value was obtained by using amorphous silica as SiO 2 , one of the raw materials of the dielectric ceramic composition, after the reliability test.
While using crystalline silica decreased from 43 to 608 after the reliability test, it decreased from 1450 to 1478.
It can be seen that the same level is maintained.
【００２８】また、各積層磁器コンデンサの誘電体層の
誘電体磁器組成物をＸ線回折で調べたところ、誘電体磁
器組成物の原料の１つとして結晶性のシリカのみを用い
たものは図２のＸＲＤ中に黒丸で示したように、ＳｉＯ
2 のピークが現われ、非晶質のシリカを用いたものは図
３に示されているようにＳｉＯ2 のピークが現われなか
った。Further, when the dielectric ceramic composition of the dielectric layer of each laminated ceramic capacitor was examined by X-ray diffraction, it was found that one using only crystalline silica as one of the raw materials of the dielectric ceramic composition was shown in FIG. As shown by the black circles in the XRD of
The peak of No. 2 appeared, and the peak using SiO 2 did not appear in the case of using amorphous silica as shown in FIG.
【００２９】なお、上記実施例ではＭＺＳ，Ａｌ2 Ｏ3
及びＳｒＴｉＯ3 からなる混合物の仮焼は行なっていな
いが、７００〜９００℃で２〜４時間の条件で仮焼する
ことによって特性の安定化が若干図られた。また、上記
実施例では積層タイプの磁器コンデンサについて説明し
たが、単層タイプの磁器コンデンサでも同様の結果が得
られた。In the above embodiment, MZS, Al 2 O 3
Although the mixture consisting of SrTiO 3 and SrTiO 3 was not calcined, the properties were slightly stabilized by calcining at 700 to 900 ° C. for 2 to 4 hours. Further, in the above embodiment, the laminated type ceramic capacitor was described, but the same result was obtained with a single layer type ceramic capacitor.
【００３０】[0030]
【発明の効果】この発明によれば、１ＭＨｚ程度の周波
数領域におけるＱ値が信頼性験（負荷試験）後に低下し
ない磁器コンデンサを得ることができるという効果があ
る。According to the present invention, it is possible to obtain a ceramic capacitor in which the Q value in a frequency range of about 1 MHz does not decrease after a reliability test (load test).
【図１】ＭＺＳ、Ａｌ2 Ｏ3 及びＳｒＴｉＯ3 のモル比
［％］を示す３成分組成図である。FIG. 1 is a three-component composition diagram showing a molar ratio [%] of MZS, Al 2 O 3 and SrTiO 3 .
【図２】結晶質シリカを用いて形成した誘電体磁器組成
物のＸ線回折の結果を示すグラフである。FIG. 2 is a graph showing the results of X-ray diffraction of a dielectric ceramic composition formed using crystalline silica.
【図３】非晶質シリカを用いて形成した誘電体磁器組成
物のＸ線回折の結果を示すグラフである。FIG. 3 is a graph showing the results of X-ray diffraction of a dielectric ceramic composition formed using amorphous silica.
Claims (8)
の誘電体磁器層と、該誘電体磁器層を挟持している少な
くとも２以上の内部電極とを備え、前記誘電体磁器組成
物が、珪酸マグネシウム・亜鉛[(MgaZn(1-a))xSiOx+2]
（以下、「ＭＺＳ」という。）とＡｌ2 Ｏ3 とＳｒＴｉ
Ｏ3 とを含有する混合物の焼結体からなり、該ＭＺＳ中
に含まれているＳｉＯ2 が結晶質のＳｉＯ2 のみからな
ることを特徴とする磁器コンデンサ。Claims: 1. An electronic apparatus comprising one or more dielectric ceramic layers made of a dielectric ceramic composition, and at least two or more internal electrodes sandwiching the dielectric ceramic layer, wherein the dielectric ceramic composition comprises , Magnesium zinc silicate [(Mg a Zn (1-a) ) x SiO x + 2 ]
(Hereinafter referred to as “MZS”), Al 2 O 3 and SrTi
A ceramic capacitor comprising a sintered body of a mixture containing O 3 and wherein the SiO 2 contained in the MZS comprises only crystalline SiO 2 .
ＺＳｒＴｉＯ3 で表される主成分と、Ｎｂ，Ｔａ及びＷから選択された
１種又は２種以上の元素の化合物からなる添加成分を含
有し、前記主成分を構成する珪酸マグネシウム・亜鉛
（ＭＺＳ）、Ａｌ2 Ｏ3 及びＳｒＴｉＯ3 のモル比
［％］が、これら３種の化合物のモル比（Ｘ，Ｙ，Ｚ）
を示す３成分組成図に於いて、 Ａ（９４．９， ０．１， ５．０） Ｂ（８５．０， １０．０， ５．０） Ｃ（６５．０， １０．０， ２５．０） Ｄ（６５．０， ０．１， ３４．９） で示される各点Ａ〜Ｄを頂点とする多角形で囲まれた範
囲にあり、 前記主成分を表す一般式中のａ及びｘの値が、 ０．１≦ａ≦０．８ ０．６７≦ｘ≦１．５ の範囲にあり、 前記添加成分がＮｂＯ5/2 ，ＴａＯ5/2 又はＷＯ3 に換
算して０．０１〜０．２モル％含有されていることを特
徴とする請求項１に記載の磁器コンデンサ。Wherein said dielectric ceramic composition has the general formula X (Mg a Zn (1- a)) X SiO X + 2 -YAl 2 O 3 -
Magnesium zinc silicate (MZS) containing a main component represented by ZSrTiO 3 and an additive component comprising a compound of one or more elements selected from Nb, Ta and W, and constituting the main component , Al 2 O 3 and SrTiO 3 , the molar ratio [%] of these three compounds (X, Y, Z)
A (94.9, 0.1, 5.0) B (85.0, 10.0, 5.0) C (65.0, 10.0, 25.) 0) is in a range surrounded by a polygon having the points A to D represented by D (65.0, 0.1, 34.9) as vertices, and a and x in the general formula representing the main component. Is in the range of 0.1 ≦ a ≦ 0.8 0.67 ≦ x ≦ 1.5, and the added component is 0.01% in terms of NbO 5/2 , TaO 5/2 or WO 3. The porcelain capacitor according to claim 1, wherein the content of the porcelain is 0.2 to 0.2 mol%.
仮焼することにより珪酸マグネシウム・亜鉛（ＭＺＳ）
を形成する工程と、この工程で得られたものにＡｌ2 Ｏ
3 とＳｒＴｉＯ3 を加えて混合する工程と、この工程で
得られた混合物からなる１又は２以上の未焼成誘電体磁
器層を少なくとも２以上の導電性ペースト膜で挟持させ
てなる積層体を形成する工程と、該積層体を焼成する工
程とを備え、前記ＭＺＳを形成する工程で原料として使
用されたＳｉＯ2 が結晶質のＳｉＯ2 のみからなること
を特徴とする磁器コンデンサの製造方法。3. A mixture of MgO, ZnO and SiO 2 and calcined to obtain magnesium zinc silicate (MZS).
And a step of forming Al 2 O on the product obtained in this step.
3 and SrTiO 3 are added and mixed, and a laminate is formed by sandwiching one or more unfired dielectric ceramic layers made of the mixture obtained in this step with at least two or more conductive paste films. And a step of firing the laminated body, wherein the SiO 2 used as a raw material in the step of forming the MZS comprises only crystalline SiO 2 .
以下であることを特徴とする請求項３に記載の磁器コン
デンサの製造方法。4. An average primary particle diameter of the SiO 2 is 2 μm.
The method for manufacturing a porcelain capacitor according to claim 3, wherein:
ＺＳｒＴｉＯ3 で表される主成分と、Ｎｂ，Ｔａ及びＷから選択された
１種又は２種以上の元素の化合物からなる添加成分を含
有し、 前記主成分を構成する珪酸マグネシウム・亜鉛（ＭＺ
Ｓ）、Ａｌ2 Ｏ3 及びＳｒＴｉＯ3 のモル比［％］が、
これら３種の化合物のモル比（Ｘ，Ｙ，Ｚ）を示す３成
分組成図に於いて、 Ａ（９４．９， ０．１， ５．０） Ｂ（８５．０， １０．０， ５．０） Ｃ（６５．０， １０．０， ２５．０） Ｄ（６５．０， ０．１， ３４．９） で示される各点Ａ〜Ｄを頂点とする多角形で囲まれた範
囲にあり、 前記主成分を表す一般式中のａ及びｘの値が、 ０．１≦ａ≦０．８ ０．６７≦ｘ≦１．５ の範囲にあり、 前記添加成分がＮｂＯ5/2 ，ＴａＯ5/2 又はＷＯ3 に換
算して０．０１〜０．２モル％含有されていることを特
徴とする請求項３又は４に記載の磁器コンデンサの製造
方法。Wherein said mixture has the general formula X (Mg a Zn (1- a)) X SiO X + 2 -YAl 2 O 3 -
It contains a main component represented by ZSrTiO 3 and an additive component composed of a compound of one or more elements selected from Nb, Ta, and W, and comprises magnesium zinc silicate (MZ) constituting the main component.
S), the molar ratio [%] of Al 2 O 3 and SrTiO 3 is
In the three-component composition diagram showing the molar ratio (X, Y, Z) of these three compounds, A (94.9, 0.1, 5.0) B (85.0, 10.0, 5) .0) C (65.0, 10.0, 25.0) A range surrounded by a polygon having the points A to D as vertices indicated by D (65.0, 0.1, 34.9) Wherein the values of a and x in the general formula representing the main component are in the range of 0.1 ≦ a ≦ 0.8 0.67 ≦ x ≦ 1.5, and the additive component is NbO 5/2 the method of manufacturing a ceramic capacitor according to claim 3 or 4, characterized in that it is contained 0.01 to 0.2 mol% in terms of TaO 5/2 or WO 3.
して仮焼する際の仮焼温度が９００〜１２００℃、仮焼
時間が２〜５時間であることを特徴とする請求項３〜５
のいずれかに記載の磁器コンデンサの製造方法。6. The calcination temperature when the mixture of MgO, ZnO and SiO 2 is calcined is 900 to 1200 ° C., and the calcination time is 2 to 5 hours.
The method for producing a porcelain capacitor according to any one of the above.
時間仮焼することを特徴とする請求項３〜６のいずれか
に記載の磁器コンデンサの製造方法。7. The mixture is heated at 700 to 900 ° C. for 2 to 4 hours.
The method for producing a ceramic capacitor according to any one of claims 3 to 6, wherein the method is calcined for a time.
４時間焼成することを特徴とする請求項３〜７のいずれ
かに記載の磁器コンデンサの製造方法。8. The laminate is heated at 950 to 1100 ° C.
The method for producing a ceramic capacitor according to any one of claims 3 to 7, wherein the firing is performed for 4 hours.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30963097A JP3219723B2 (en) | 1997-10-24 | 1997-10-24 | Porcelain capacitor and method of manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30963097A JP3219723B2 (en) | 1997-10-24 | 1997-10-24 | Porcelain capacitor and method of manufacturing the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH11126726A true JPH11126726A (en) | 1999-05-11 |
| JP3219723B2 JP3219723B2 (en) | 2001-10-15 |
Family
ID=17995354
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP30963097A Expired - Fee Related JP3219723B2 (en) | 1997-10-24 | 1997-10-24 | Porcelain capacitor and method of manufacturing the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3219723B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112830775A (en) * | 2021-03-01 | 2021-05-25 | 南宁国人射频通信有限公司 | Low-dielectric-constant microwave dielectric ceramic and preparation method thereof |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR200495769Y1 (en) * | 2020-03-30 | 2022-08-16 | (주) 자바라이프 | Preventing Device of Sand Splash for Cat's Toilet |
-
1997
- 1997-10-24 JP JP30963097A patent/JP3219723B2/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112830775A (en) * | 2021-03-01 | 2021-05-25 | 南宁国人射频通信有限公司 | Low-dielectric-constant microwave dielectric ceramic and preparation method thereof |
| CN112830775B (en) * | 2021-03-01 | 2023-06-23 | 南宁国人射频通信有限公司 | Low-dielectric-constant microwave dielectric ceramic and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3219723B2 (en) | 2001-10-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP2003665B1 (en) | Dielectric ceramic composition with Core-Shell particles and electronic device | |
| JP4345071B2 (en) | Multilayer ceramic capacitor and method for manufacturing the multilayer ceramic capacitor | |
| JP2007258661A (en) | Laminated ceramic capacitor and its manufacturing method | |
| JP2006206362A (en) | Dielectric ceramic and multilayer ceramic capacitor | |
| JP2001291632A (en) | Non-reducing dielectric ceramic and laminated ceramic capacitor using the same | |
| JP5233763B2 (en) | Barium titanate-based dielectric raw material powder, method for producing the same, method for producing ceramic green sheet, and method for producing multilayer ceramic capacitor | |
| JP7037945B2 (en) | Ceramic capacitors and their manufacturing methods | |
| JP2002362970A (en) | Dielectric ceramic composition and ceramic capacitor | |
| JP5229685B2 (en) | Dielectric ceramic and multilayer ceramic capacitor | |
| JP2007063114A (en) | Dielectric ceramic, method of manufacturing the same and laminated ceramic capacitor | |
| JP7262640B2 (en) | ceramic capacitor | |
| JP3219723B2 (en) | Porcelain capacitor and method of manufacturing the same | |
| JP3080587B2 (en) | Dielectric porcelain composition and porcelain capacitor | |
| JP3250923B2 (en) | Dielectric porcelain composition | |
| KR100703080B1 (en) | Method for Manufacturing Dielectric Powder for Low Temperature Sintering and Method for Manufacturing Multilayer Ceramic Condenser Using the Same | |
| JP3319704B2 (en) | Dielectric porcelain composition and porcelain capacitor | |
| JP3435039B2 (en) | Dielectric ceramics and multilayer ceramic capacitors | |
| JP2902925B2 (en) | Dielectric porcelain composition | |
| JP3250917B2 (en) | Dielectric porcelain composition | |
| JP3228649B2 (en) | Dielectric porcelain composition | |
| JPH11297561A (en) | Multilayer ceramic capacitor using complex peroviskite compound | |
| JP2004292271A (en) | Dielectric porcelain and its manufacturing method, and laminated ceramic capacitor | |
| JP7544593B2 (en) | Dielectric ceramic composition and electronic components | |
| JP3250927B2 (en) | Dielectric porcelain composition | |
| JP2872513B2 (en) | Dielectric porcelain and porcelain capacitor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20010710 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20070810 Year of fee payment: 6 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080810 Year of fee payment: 7 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080810 Year of fee payment: 7 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090810 Year of fee payment: 8 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100810 Year of fee payment: 9 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110810 Year of fee payment: 10 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120810 Year of fee payment: 11 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130810 Year of fee payment: 12 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| LAPS | Cancellation because of no payment of annual fees |