JPH11121393A - Method for doping silicon carbide semiconductor with donor impurities - Google Patents

Method for doping silicon carbide semiconductor with donor impurities

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Publication number
JPH11121393A
JPH11121393A JP28057397A JP28057397A JPH11121393A JP H11121393 A JPH11121393 A JP H11121393A JP 28057397 A JP28057397 A JP 28057397A JP 28057397 A JP28057397 A JP 28057397A JP H11121393 A JPH11121393 A JP H11121393A
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JP
Japan
Prior art keywords
phosphorus atoms
temperature
ion
implanted
sic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
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JP28057397A
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Japanese (ja)
Other versions
JP3105481B2 (en
Inventor
Takeshi Oshima
武 大島
Hisayoshi Ito
久義 伊藤
Isamu Nashiyama
勇 梨山
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Japan Atomic Energy Agency
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Japan Atomic Energy Research Institute
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Japan Atomic Energy Research Institute filed Critical Japan Atomic Energy Research Institute
Priority to JP09280573A priority Critical patent/JP3105481B2/en
Publication of JPH11121393A publication Critical patent/JPH11121393A/en
Application granted granted Critical
Publication of JP3105481B2 publication Critical patent/JP3105481B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Abstract

PROBLEM TO BE SOLVED: To improve electrical characteristics, by ion-implanting phosphorus atoms into SiC which is maintained at a specified temperature, eliminating generated lattice defect by annealing on the spot, and effectively and electrically performing activation. SOLUTION: A temperature of a P-type hexagonal SiC single crystal is maintained at least 1200 deg.C, and, e.g. phosphorus atoms of 1×10<18> /cm<3> are ion- implanted with energy of, e.g. 80-200 keV in the P-type hexahedral crystal SiC single crystal. Electron concentration in this case is about 10<16> /cm<3> . The phosphorus atoms are electrically activated without performing thermal treatment after ion implantation and turned into an N-type semiconductor. Its activation ratio is about 10<-2> . Hence the temperature of thermal treatment necessary for impurity doping of phosphorus atoms can be lowered, and the activation ratio can be improved by using a high temperature ion implantation method. The temperature of an element forming process of SiC semiconductor can be lowered by using the above method, and it is useful for manufacturing the element of SiC semiconductor.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【０００１】[0001]

【発明の属する技術分野】本発明は、炭化ケイ素半導体
（ＳｉＣ）にリン原子をドナー不純物としてドープする
方法に関するものであり、リン原子を高温度でイオン注
入することで、注入したリン原子の電気的活性化度を上
げようとするものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for doping a silicon carbide semiconductor (SiC) with a phosphorus atom as a donor impurity. The purpose is to increase the degree of objective activation.

【０００２】[0002]

【従来の技術】イオン注入によるＳｉＣ半導体へのリン
原子のドープに関しては、その電気的活性化のためには
イオン注入の後、１４００℃以上の高温による熱処理を
必要とするため、有効なドーピング法として成立してい
ない。2. Description of the Related Art With respect to doping of a SiC semiconductor with phosphorus atoms by ion implantation, a heat treatment at a high temperature of 1400 ° C. or more is required after ion implantation for electrical activation. Is not established.

【０００３】[0003]

【発明が解決しようとする課題】この原因は、イオン注
入に伴いＳｉＣ中に多くの照射損傷格子欠陥が発生し、
このためイオン注入したリン原子がドナー不純物として
電気的に活性化することが妨げられ、電子のドナーとし
て有効に作用しないためである。また、この欠陥が電気
伝導を妨害するため、伝導電子の移動度が低下し、半導
体材料としての電気特性が低下する。従って、注入され
たリン原子の活性化率を上げると共に電気特性の低下を
防ぐには、照射欠陥の発生を抑制する必要がある。本発
明はかかる欠点を改善するために成したものである。The cause of this is that many irradiation-damaged lattice defects occur in SiC due to ion implantation,
This prevents ion-implanted phosphorus atoms from being electrically activated as donor impurities, and does not effectively act as electron donors. In addition, since the defect hinders electrical conduction, the mobility of conduction electrons is reduced, and the electrical characteristics of the semiconductor material are reduced. Therefore, it is necessary to suppress the occurrence of irradiation defects in order to increase the activation rate of the implanted phosphorus atoms and to prevent a decrease in electrical characteristics. The present invention has been made to improve such disadvantages.

【０００４】[0004]

【課題を解決するための手段】本発明は、１，２００℃
以上の高温に保持したＳｉＣにリン原子をイオン注入す
ることによって、発生する格子欠陥をその場でアニール
して取り除き、効率よく電気的に活性化して電気特性を
向上しようとするものである。SUMMARY OF THE INVENTION The present invention relates to a method for manufacturing a semiconductor device comprising the steps of:
By implanting phosphorus atoms into SiC held at the high temperature described above, generated lattice defects are annealed and removed in situ, and electrical activation is efficiently performed to improve electrical characteristics.

【０００５】[0005]

【発明の実施の形態】１，２００℃の温度に保ったＳｉ
Ｃにドナー不純物であるリン原子をイオン注入すると、
照射欠陥の発生が抑制され、注入リン原子は電器的に活
性化して伝導電子が増加する。これを、１００℃以下で
イオン注入し、１，２００℃で熱処理する場合と比べる
と、約１０倍の電気的活性化率を得ることができる。以
下、本発明を実施例にしたがってより具体的に説明す
る。BEST MODE FOR CARRYING OUT THE INVENTION Si kept at a temperature of 1,200 ° C.
When phosphorus atoms, which are donor impurities, are ion-implanted into C,
Generation of irradiation defects is suppressed, and the implanted phosphorus atoms are activated electrically to increase conduction electrons. As compared with the case where the ion implantation is performed at a temperature of 100 ° C. or less and the heat treatment is performed at 1,200 ° C., it is possible to obtain an electric activation rate about 10 times as high. Hereinafter, the present invention will be described more specifically with reference to examples.

【０００６】[0006]

【実施例１】（低濃度イオン注入） ｐ型六方晶ＳｉＣ単結晶を２５℃（室温）、８００℃、
１，０００℃のいずれかの温度に保ち、これに１×１０
18／ｃｍ3のリン原子を８０−２００ｋｅｖのエネルギ
ーでイオン注入すると、注入リン原子は電気的にほとん
ど活性化しない。このＳｉＣを１，２００℃で熱処理を
行うと、注入リン原子が活性化してｎ型半導体になる
が、図１の点線で示すように電子濃度は１０15ｃｍ
-3（／ｃｍ3）程度であり、イオン注入したリン原子の
電気的活性化率は約１０-3である。Example 1 (Low-concentration ion implantation) A p-type hexagonal SiC single crystal was subjected to 25 ° C (room temperature), 800 ° C,
Keep at any temperature of 1,000 ° C and add 1 × 10
When phosphorus atoms of 18 / cm 3 are ion-implanted at an energy of 80 to 200 keV, the implanted phosphorus atoms are hardly electrically activated. When this SiC is subjected to a heat treatment at 1200 ° C., the implanted phosphorus atoms are activated to become an n-type semiconductor. However, as shown by a dotted line in FIG. 1, the electron concentration is 10 15 cm.
-3 (/ cm 3 ), and the electrical activation rate of ion-implanted phosphorus atoms is about 10 -3 .

【０００７】これに反し、ｐ型六方晶ＳｉＣ単結晶を
１，２００℃の温度に保ち、これに１×１０18／ｃｍ3
のリン原子を８０−２００ｋｅｖのエネルギーでイオン
注入すると、図１の実線で示すように電子濃度は１０16
ｃｍ-3（／ｃｍ3）程度であり、イオン注入後の熱処理
を行わなくともリン原子は電気的に活性化してｎ型半導
体になる。しかも、その活性化率は約１０-2である。On the other hand, a p-type hexagonal SiC single crystal is kept at a temperature of 1,200 ° C., and is kept at 1 × 10 18 / cm 3
Is implanted at an energy of 80-200 keV, the electron concentration becomes 10 16 as shown by the solid line in FIG.
cm −3 (/ cm 3 ), and the phosphorus atoms are electrically activated to become an n-type semiconductor without performing heat treatment after ion implantation. Moreover, its activation rate is about 10 -2 .

【０００８】即ち、図１は、ｐ型六方晶ＳｉＣ単結晶へ
１×１０18／ｃｍ3のリン原子を８０−２００ｋｅｖの
エネルギーでイオン注入した試料の室温での電子濃度及
び熱処理後の電子濃度と熱処理温度との関係を示した図
であり、イオン注入後の熱処理はアルゴンガス中で２０
分間行った。また、１，２００℃で注入を行った試料の
１，２００℃の結果は注入後熱処理なしでの結果であ
る。FIG. 1 shows the electron concentration at room temperature and the electron concentration after heat treatment of a sample in which phosphorus atoms of 1 × 10 18 / cm 3 are ion-implanted into a p-type hexagonal SiC single crystal at an energy of 80 to 200 keV. FIG. 5 is a graph showing the relationship between the heat treatment temperature and the heat treatment after the ion implantation.
Minutes. In addition, the results at 1200 ° C. of the sample injected at 1200 ° C. are the results without heat treatment after the injection.

【０００９】したがって、図１において、実線は、本発
明によるものであり、ｐ型六方晶ＳｉＣ単結晶を１，２
００℃の温度に保ち、これにイオン注入したものを種々
の温度で熱処理した場合の電子濃度を示し、点線は、ｐ
型六方晶ＳｉＣ単結晶を２５℃（室温）に保ち、これに
イオン注入したものを種々の温度で熱処理した場合の電
子濃度を示している。Therefore, in FIG. 1, the solid line is according to the present invention, and the p-type hexagonal SiC single crystal is 1,2.
The electron concentration is shown when the sample is kept at a temperature of 00 ° C. and is ion-implanted and heat-treated at various temperatures.
The figure shows the electron concentration when a type hexagonal SiC single crystal is kept at 25 ° C. (room temperature), and an ion-implanted one is heat-treated at various temperatures.

【００１０】[0010]

【実施例２】（高濃度イオン注入） ｐ型六方晶ＳｉＣ単結晶を２５℃（室温）に保ち、これ
に６×１０18／ｃｍ3のリン原子を８０−２００ｋｅｖ
のエネルギーでイオン注入すると、注入リン原子は電気
的にほとんど活性化しない。このＳｉＣを１，２００℃
で熱処理を行うと、図２の点線で示すように注入リン原
子が活性化してｎ型半導体になるが、イオン注入したリ
ン原子の電気的活性化率は約１０-3である。Example 2 (High-concentration ion implantation) A p-type hexagonal SiC single crystal was kept at 25 ° C. (room temperature), and 6 × 10 18 / cm 3 phosphorus atoms were added thereto at 80 to 200 keV.
When the ions are implanted with the energy, the implanted phosphorus atoms are hardly electrically activated. 1,200 ° C
When the heat treatment is performed as shown in FIG. 2, the implanted phosphorus atoms are activated to become an n-type semiconductor as shown by the dotted line in FIG. 2, but the electrical activation rate of the ion-implanted phosphorus atoms is about 10 -3 .

【００１１】これに反し、ｐ型六方晶ＳｉＣ単結晶を
１，２００℃に保ち、これに６×１０18／ｃｍ3のリン
原子を８０−２００ｋｅｖのエネルギーでイオン注入す
ると、図２の実線のようにイオン注入後の熱処理を行わ
なくてもリン原子は電気的に活性化してｎ半導体にな
る。しかも、その活性化率は約１０-2である。また、
１，５００℃までの熱処理の効果を比較すると、１，２
００℃で注入を行った試料は室温で注入を行った試料に
比べ、約２倍の電気的活性化率が得られた。On the other hand, when a p-type hexagonal SiC single crystal is kept at 1,200 ° C. and phosphorus atoms of 6 × 10 18 / cm 3 are ion-implanted with an energy of 80-200 keV, the solid line in FIG. As described above, even without performing the heat treatment after the ion implantation, the phosphorus atoms are electrically activated to become n semiconductors. Moreover, its activation rate is about 10 -2 . Also,
Comparing the effects of heat treatment up to 1,500 ° C.,
The sample injected at 00 ° C. had about twice the electrical activation rate as the sample injected at room temperature.

【００１２】即ち、図２は、ｐ型六方晶ＳｉＣ単結晶へ
６×１０18／ｃｍ3のリン原子を８０−２００ｋｅｖの
エネルギーでイオン注入した試料の室温での電子濃度及
び熱処理後の電子濃度と熱処理温度との関係を示した図
であり、イオン注入後の熱処理はアルゴンガス中で２０
分間行った。また、１，２００℃で注入を行った試料の
１，２００℃の結果は注入後熱処理なしでの結果であ
る。That is, FIG. 2 shows the electron concentration at room temperature and the electron concentration after heat treatment of a sample obtained by ion-implanting 6 × 10 18 / cm 3 phosphorus atoms into a p-type hexagonal SiC single crystal at an energy of 80 to 200 keV. FIG. 5 is a graph showing the relationship between the heat treatment temperature and the heat treatment after the ion implantation.
Minutes. In addition, the results at 1200 ° C. of the sample injected at 1200 ° C. are the results without heat treatment after the injection.

【００１３】したがって、図２において、実線は、本発
明によるものであり、ｐ型六方晶ＳｉＣ単結晶を１，２
００℃の温度に保ち、これにイオン注入したものを種々
の温度で熱処理した場合の電子濃度を示し、点線は、ｐ
型六方晶ＳｉＣ単結晶を２５℃（室温）に保ち、これに
イオン注入したものを種々の温度で熱処理した場合の電
子濃度を示している。Therefore, in FIG. 2, the solid line is according to the present invention, and the p-type hexagonal SiC single crystal is 1,2.
The electron concentration is shown when the sample is kept at a temperature of 00 ° C. and is ion-implanted and heat-treated at various temperatures.
The figure shows the electron concentration when a type hexagonal SiC single crystal is kept at 25 ° C. (room temperature), and an ion-implanted one is heat-treated at various temperatures.

【００１４】[0014]

【発明の効果】高温イオン注入法を用いることでリン原
子の不純物ドープに必要な熱処理の温度の低温化及び活
性化率を高めることが可能になる。また、本発明の方法
を用いることで、ＳｉＣ半導体の素子化プロセスの低温
化が可能になり、ＳｉＣ半導体の素子作製に役立つ。By using the high-temperature ion implantation method, it is possible to lower the temperature of the heat treatment necessary for doping the impurity of phosphorus atoms and to increase the activation rate. Further, by using the method of the present invention, it is possible to lower the temperature of the process for forming a SiC semiconductor device, which is useful for manufacturing a SiC semiconductor device.

【図面の簡単な説明】[Brief description of the drawings]

【図１】ｐ型六方晶ＳｉＣ単結晶へ１×１０18／ｃｍ3
のリン原子を８０−２００ｋｅｖのエネルギーでイオン
注入した試料の室温での電子濃度及び熱処理後の電子濃
度と熱処理との関係を示した図である。FIG. 1. 1 × 10 18 / cm 3 into p-type hexagonal SiC single crystal
FIG. 5 is a diagram showing the relationship between the electron concentration at room temperature, the electron concentration after heat treatment, and the heat treatment of a sample obtained by ion-implanting phosphorus atoms at an energy of 80 to 200 keV.

【図２】ｐ型六方晶ＳｉＣ単結晶へ６×１０18／ｃｍ3
のリン原子を８０−２００ｋｅｖのエネルギーでイオン
注入した試料の室温での電子濃度及び熱処理後の電子濃
度と熱処理温度との関係を示した図である。FIG. 2: 6 × 10 18 / cm 3 into p-type hexagonal SiC single crystal
FIG. 4 is a diagram showing the relationship between the electron concentration at room temperature, the electron concentration after heat treatment, and the heat treatment temperature of a sample in which phosphorus atoms of the formula (1) are ion-implanted at an energy of 80 to 200 keV.

Claims (2)

【特許請求の範囲】[Claims] 【請求項１】 炭化ケイ素半導体にリン原子を高温でイ
オン注入することを特徴とする炭化ケイ素半導体へのリ
ン原子不純物をドープする方法。1. A method of doping a silicon carbide semiconductor with a phosphorus atom impurity, which comprises implanting phosphorus atoms into the silicon carbide semiconductor at a high temperature. 【請求項２】 イオン注入の温度が１，２００℃以上で
ある請求項１記載の炭化ケイ素半導体へのリン原子不純
物をドープする方法。2. The method for doping a silicon carbide semiconductor with a phosphorus atom impurity according to claim 1, wherein the temperature of the ion implantation is 1200 ° C. or higher.
JP09280573A 1997-10-14 1997-10-14 Method for doping donor impurities into silicon carbide semiconductor Expired - Fee Related JP3105481B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP09280573A JP3105481B2 (en) 1997-10-14 1997-10-14 Method for doping donor impurities into silicon carbide semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP09280573A JP3105481B2 (en) 1997-10-14 1997-10-14 Method for doping donor impurities into silicon carbide semiconductor

Publications (2)

Publication Number Publication Date
JPH11121393A true JPH11121393A (en) 1999-04-30
JP3105481B2 JP3105481B2 (en) 2000-10-30

Family

ID=17626923

Family Applications (1)

Application Number Title Priority Date Filing Date
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Country Status (1)

Country Link
JP (1) JP3105481B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1179620A1 (en) * 2000-08-10 2002-02-13 Hoya Corporation Silicon carbide and method of manufacturing the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1179620A1 (en) * 2000-08-10 2002-02-13 Hoya Corporation Silicon carbide and method of manufacturing the same

Also Published As

Publication number Publication date
JP3105481B2 (en) 2000-10-30

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