JPH11111962A - Solid state image-pickup device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a soil state image-pickup device, capable of preventing the mixing of colors by incident light from an oblique direction at the peripheral part of a light-receiving area, by making the array pitch of on-chip color filters smaller than those the array pitch of photodiodes. SOLUTION: An array pitch of the on-chip color filters A12 and B13 is smaller than the array pitch of photodiodes 2 and the center of an on-chip color filter A12 or B13, and the center of the photodiode 2 are on the same straight line at the center part of the light-receiving area. Thus, since the position of the on-chip color filter A12 or B13 corresponding to the photodiode 2 is shifted as moving away from the center of the light-receiving area to the periphery, all of the incident light from the oblique direction is made to enter the corresponding one photodiode at the peripheral part. Thus, color mixing with an adjacent color is eliminated and satisfactory characteristics without the degradation in color reproducibility are obtained.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to an element structure of a solid-state imaging device.

[0002]

2. Description of the Related Art In recent years, solid-state imaging devices constituting solid-state imaging devices have been reduced in size and number of pixels, and the manufacturing technology thereof has continued to be miniaturized. Accordingly, high sensitivity and low smear have been issues.

Hereinafter, an example of a conventional solid-state imaging device will be described with reference to FIGS. 8 to 11
It is sectional drawing of the vertical direction and the horizontal direction in the center part and peripheral part of the light receiving area of the same solid-state imaging device. The vertical direction is a column direction of a vertical CCD described later, and the horizontal direction is a direction orthogonal to this.

FIG. 8 is a vertical sectional view at the center of the light receiving area, FIG. 9 is a vertical sectional view at the periphery of the light receiving area, FIG. 10 is a horizontal sectional view at the center of the light receiving area, and FIG. Are cross-sectional views in the horizontal direction in the peripheral portion of FIG.

[0005] The semiconductor substrate 1 is a silicon single crystal,
A p-type well is formed by ion implantation in a portion where the light receiving section is formed. By implanting n-type arsenic or phosphorus into the p-type well, the photodiode 2
Are formed. Similarly, by injecting n-type arsenic or phosphorus into the p-type well, the vertical CCD 3
(FIGS. 10 and 11) are formed.

A potential barrier is formed between the photodiode 2 and the vertical CCD 3 by injecting p-type boron or the like, thereby forming a vertical CCD separation section 4 (FIG. 10, 1).
1) is formed. Similarly, by implanting p-type boron or the like between adjacent photodiodes 2,
Create a potential barrier and separate the photodiodes 5
(FIGS. 8 and 9) are formed.

On the vertical CCD 3, a polysilicon electrode 6 is provided.
Are formed. With this polysilicon electrode 6,
The potential of the vertical CCD 3 is controlled. The surface of the polysilicon electrode 6 is covered with an oxide film 7. On the oxide film 7, a metal light shielding film 8 (FIGS. 10 and 11) is formed,
D3 is shielded from incident light to suppress generation of smear.

The metal light shielding film 8 has an opening 9 (FIGS. 10 and 1).
1) is formed and arranged above the photodiode 2. The opening 9 is for receiving incident light. The openings 9 are formed in stripes in a direction parallel to each column of the vertical CCD 3.

An insulating film 10 is formed on the metal light-shielding film 8 to protect the solid-state imaging device. Also, the insulating film 1
0, a flattening layer 11 is formed.
Has flattened the steps of the elements forming the solid-state imaging device. On-chip color filter A on flattening layer 11
12, an on-chip color filter B13 is formed to colorize the elements forming the solid-state imaging device.

On-chip color filters A12, B13
On top of this, a planarization layer 11 is formed again.
An on-chip microlens 14 for condensing incident light is formed on 1.

In the conventional solid-state image pickup device configured as described above, the incident light 15
4, the light is refracted toward the opening 9 and passes through the on-chip color filters A12 and B13 (FIGS. 10 and 1).
1). Further, the light enters the photodiode 2 and generates a signal charge 16 by photoelectric conversion. This signal charge 16 is read out to the vertical CCD 3.

[0012]

However, the above-described conventional solid-state imaging device has the following problems. (1) In the peripheral portion (FIG. 9) of the light receiving area, color mixing occurs due to incident light from an oblique direction, so that color reproducibility deteriorates. This is for the following reason. The optical center of the photographing optical system is arranged on the center extension of the light receiving area of the solid-state imaging device. However, when the exit pupil is finite, as the distance from the center of the light receiving region to the periphery (in the direction of arrow a) increases,
5 leans. For this reason, the incident light rays in the peripheral portion enter from an oblique direction compared to the central portion.

That is, at the center of the light receiving area, the incident light 15 enters perpendicularly, so that all the light passing through one color filter enters one photodiode 2 (FIG. 8), but the incident light 15 Is incident with a certain inclination, so that a phenomenon occurs (see FIG. 9) in which a part of the incident light 15 enters the adjacent photodiode 2 which is not the corresponding photodiode 2.

For this reason, color mixing occurs in the peripheral portion,
Color reproducibility deteriorates. Especially in the case of stripe light shielding film,
In the vertical direction, since the light on the inter-photodiode separating portion 5 is not shielded, all of the incident light 15 enters the photodiode 2 and this effect is remarkable (FIG. 9). (2) Central part (FIG. 10) and peripheral part (FIG. 11) of light receiving area
In this case, sensitivity unevenness occurs. This is because, as described above, the incident light 15 enters the peripheral portion obliquely as compared with the central portion. That is, since the incident light enters vertically at the center of the light receiving region, it is condensed at the center of the opening of the light shielding film, so that most of the entering light becomes effective light (FIG. 10).

However, in the peripheral portion, the incident light 15 enters with a certain inclination, and is condensed out of the center of the corresponding opening 9.
A large amount of invalid light that is shielded by light and does not enter any of the photodiodes 2 is generated (FIG. 11). For this reason, in the central portion and the peripheral portion, the sensitivity is lower in the peripheral portion, and sensitivity unevenness occurs.

In recent years, the reduction of the exit pupil distance has been progressing more and more due to the miniaturization of cameras, so that these problems cannot be ignored. An object of the present invention is to provide a solid-state imaging device that solves the above-described conventional problem, prevents color mixing in a peripheral portion of a light receiving area, has excellent color reproducibility, and can reduce sensitivity unevenness. And

[0017]

In order to achieve the above object, a first solid-state imaging device according to the present invention comprises a photodiode arrayed at a predetermined pitch in a light receiving area, and a row of the photodiodes. CCDs alternately arranged, an on-chip microlens formed above the photodiode for condensing incident light, and an on-chip color formed between the photodiode and the on-chip microlens A solid-state imaging device including a filter, wherein an arrangement pitch of the on-chip color filters is smaller than an arrangement pitch of the photodiodes, and a center of the light-receiving region, the center of the on-chip color filters, It is characterized by being on the same straight line as the center of the diode.

According to the first solid-state imaging device, the position of the on-chip color filter corresponding to the photodiode shifts as the distance from the center of the light receiving area to the periphery increases. All the incident light passing through the filter from the oblique direction enters one corresponding photodiode. For this reason,
There is no color mixture with the adjacent color, and good characteristics without deterioration of color reproducibility can be obtained.

In the first solid-state imaging device,
Preferably, the CCD section is covered with a metal light-shielding film, and the metal light-shielding film is formed with a stripe-shaped or matrix-shaped opening parallel to each column of the CCD.

It is preferable that an array pitch of the on-chip color filters in a direction parallel to each column of the CCD is smaller than an array pitch of the photodiodes in a column direction.

In the first solid-state imaging device, the arrangement pitch of the on-chip microlenses is:
It is preferable that the center of the on-chip microlens and the center of the photodiode are on the same straight line at the center of the light receiving region, which is smaller than the arrangement pitch of the photodiodes.

According to the solid-state imaging device as described above, the position of the on-chip microlens corresponding to the photodiode shifts as the distance from the center of the light receiving region to the periphery increases. Light can be focused on almost the center of the opening of the light shielding film. For this reason, sensitivity unevenness in the central portion and the peripheral portion can be reduced, and the incident light in the peripheral portion can be effectively received, so that the sensitivity is improved.

In the solid-state imaging device, the CCD section is covered with a metal light-shielding film, and the metal light-shielding film is formed with a stripe-shaped or matrix-shaped opening parallel to each column of the CCD. Is preferred.

Also, the arrangement pitch of the on-chip color filters in the direction parallel to each column of the CCDs is smaller than the arrangement pitch of the photodiodes in the column direction, and each column of the CCDs of the on-chip microlenses. It is preferable that the arrangement pitch in the direction perpendicular to the array is smaller than the arrangement pitch between the columns of the photodiodes.

Next, a second solid-state imaging device according to the present invention comprises: a photodiode arrayed at a predetermined pitch in a light receiving area; a CCD arrayed alternately with each row of the photodiodes; A solid-state imaging device comprising an on-chip microlens for collecting incident light formed on the upper side of the CCD, wherein the CCD unit is covered with a metal light-shielding film, and the metal light-shielding film includes the CCD. A parallel or stripe-shaped or matrix-shaped opening is formed in each of the columns, the arrangement pitch of the on-chip microlenses is smaller than the arrangement pitch of the photodiodes, and the on-chip The center of the micro lens and the center of the photodiode are on the same straight line.

According to the second solid-state imaging device of the present invention, the positions of the on-chip microlenses corresponding to the photodiodes are shifted as the distance from the center of the light receiving region to the periphery increases. The incident light from the direction can be focused on almost the center of the opening of the light shielding film. For this reason, sensitivity unevenness in the central portion and the peripheral portion can be reduced, and the incident light in the peripheral portion can be effectively received, so that the sensitivity is improved.

In the second solid-state imaging device according to the present invention, an arrangement pitch of the on-chip microlenses in a direction perpendicular to each column of the CCD is smaller than an arrangement pitch between the columns of the photodiodes. Is preferred. .

Further, it is preferable that an array pitch of the on-chip microlenses in a direction horizontal to each column of the CCD is smaller than an array pitch of the photodiodes in a column direction.

Further, in the second solid-state imaging device according to the present invention, it is preferable that an on-chip color filter is provided between the photodiode and the on-chip micro lens.

In a preferred solid-state imaging device having the on-chip color filter, an arrangement pitch of the on-chip color filters in a direction parallel to each column of the CCD is smaller than an arrangement pitch of the photodiodes in a column direction. Preferably, at the center of the light receiving region, the center of the on-chip color filter and the center of the photodiode are on the same straight line.

According to the preferred solid-state imaging device having the above-described on-chip color filter, the position of the on-chip color filter corresponding to the photodiode shifts as the distance from the center of the light receiving region to the periphery increases. Also in the section, all the incident light from the oblique direction that has passed through one on-chip color filter enters one corresponding photodiode. For this reason, there is no mixed color with the adjacent color, and good characteristics without deterioration of color reproducibility can be obtained.

Further, it is preferable that an arrangement pitch of the on-chip color filters in a direction perpendicular to each column of the CCD is smaller than an arrangement pitch between the columns of the photodiodes.

In each of the solid-state imaging devices according to the present invention,
It is preferable that the on-chip micro lens is of a lenticular type parallel to each row of the CCD. According to the solid-state imaging device as described above, the manufacture of the on-chip microlens becomes easy, and the occupancy of the on-chip microlens with respect to the pixel is effectively maximized in the vertical direction, so that the sensitivity is improved.

[0034]

BRIEF DESCRIPTION OF THE DRAWINGS FIG.
This will be described with reference to FIG. The same components as those in the conventional example are denoted by the same reference numerals, and detailed description thereof is omitted.

(Embodiment 1) FIGS. 1 and 2 are cross-sectional views in a vertical direction and a horizontal direction in a peripheral portion of a light receiving region of the same solid-state imaging device according to Embodiment 1 of the present invention. The vertical direction is a column direction of the vertical CCD, and the horizontal direction is a direction orthogonal to the column direction. FIG. 1 is a vertical cross-sectional view of a peripheral portion of a light receiving region. FIG. 2 is a horizontal cross-sectional view of the periphery of the light receiving region.

As in the conventional example, the incident light 15 is refracted by the on-chip microlens 14 toward the opening 9 of the light shielding film and passes through the on-chip color filters A12 and B13. Further, the incident light 15 enters the photodiode 2 formed on the semiconductor substrate, and generates signal charges by photoelectric conversion. This signal charge is transferred to the vertical CCD 3
Is read out.

As described in the conventional example, when the exit pupil is finite, light rays incident on the solid-state imaging device via the photographing optical system enter the light vertically at the center of the light receiving area, but enter the light at the periphery. The slope increases as approaching. That is, in the periphery of the light receiving area, the incident light 15 that has passed through one of the on-chip color filters A12 or B13 may be partially incident on the adjacent photodiode 2 that is not the corresponding photodiode 2. In this case, color mixing occurs. In particular, in the case of a stripe light-shielding shape, this effect is remarkable in the vertical direction since light is not shielded on the photodiode inter-division.

In this embodiment, in the vertical direction (horizontal direction in FIG. 1), that is, in the column direction of the vertical CCDs 3, the arrangement pitch of the on-chip color filters A12 and B13 is smaller than the arrangement pitch of the photodiodes 2 in the column direction. ing. Further, although not shown, at the center of the light receiving region, the center of the photodiode 2 and the center of the corresponding on-chip color filter A12 or B13 are on the same straight line. .

For this reason, as the distance from the center of the light receiving region to the peripheral portion (the direction of the arrow a in FIG. 1) increases, the center of the photodiode 2 and the center of each corresponding on-chip color filter deviate. . That is, as shown in FIG. 1, all the incident light 15 that has passed through one on-chip color filter in a tilted state enters one corresponding photodiode 2. As a result, good characteristics can be obtained without adjacent colors being mixed and without deterioration in color reproducibility.

In this embodiment, the arrangement pitch of the on-chip color filters is smaller than the arrangement pitch of the photodiodes 2 only in the vertical direction (the horizontal direction in FIG. 1), that is, in the column direction of the vertical CCDs. . This is for the following reason. As shown in FIG. 2, in the horizontal direction of FIG. 2, that is, in the direction perpendicular to each column of the vertical CCD 3, incident light rays are shielded by the metal light shielding film 8 in portions other than the openings 9. For this reason, in the direction perpendicular to each column of the vertical CCD 3, it is not necessary to make the arrangement pitch of the on-chip color filters smaller than the arrangement pitch of the photodiodes.

When the size of the on-chip color filter is sufficiently large with respect to the size of the opening 9, the distance between the opening 9 and the on-chip color filter corresponding to the opening 9 adjacent thereto. , So that no color mixing occurs.

As in the present embodiment, reducing the arrangement pitch in only one direction (vertical direction) of the on-chip color filter is different from changing the arrangement pitch in two directions (vertical and horizontal directions). There is an advantage that the manufacture of the chip color filter is facilitated and the accuracy is improved.

The same effect can be obtained even if the pitch is arranged small in both the vertical and horizontal directions. FIG. 3 is a vertical cross-sectional view of the periphery of the light receiving region of the embodiment using the lenticular type on-chip microlenses 14a in a direction parallel to each column of the vertical CCD 3. When the lenticular-type on-chip microlens 14a is used, the incoming oblique light enters the light receiving area without being condensed, so that color mixing is more likely to occur.

In the present embodiment, the arrangement pitch of the on-chip color filters A12 and B13 in the vertical direction (the horizontal direction in FIG. 3) is smaller than the arrangement pitch of the photodiodes 2 in the column direction. Further, although not shown, the center of the photodiode 2 is located at the center of the light receiving region,
The center of the on-chip color filter A12 or B13 is on the same straight line.

For this reason, as the distance from the center of the light receiving region to the peripheral portion (in the direction of arrow a) increases, the photodiode 2
Is shifted from the center of the corresponding on-chip color filter. That is, as shown in FIG. 3, all the incident light 15 that has passed through one on-chip color filter in an inclined state enters the corresponding one photodiode 2. As a result, good characteristics can be obtained without adjacent colors being mixed and without deterioration in color reproducibility.

Further, by using the lenticular type on-chip microlens, the on-chip microlens is easily manufactured and the occupancy of the on-chip microlens with respect to the pixel is effectively maximized in the vertical direction. improves.

Although FIG. 3 shows a case of a lenticular type on-chip micro lens oriented in parallel to each column of the vertical CCD 3, the lens curvature in the horizontal direction and the vertical direction is changed like a two-stage lens. A modified on-chip micro lens or the like may be used.

In this embodiment, the openings of the metal light-shielding film are formed in stripes in a direction parallel to each column of the vertical CCD 3. However, the openings are provided in a matrix at a predetermined pitch on the photodiodes. The same effect can be obtained even with the opening of the light shielding film.

(Embodiment 2) FIGS. 4 and 5 are vertical and horizontal cross-sectional views of the periphery of a light receiving region of the same solid-state imaging device according to Embodiment 2 of the present invention. The vertical direction is a column direction of the vertical CCD, and the horizontal direction is a direction orthogonal to the column direction. FIG. 4 is a horizontal cross-sectional view of the periphery of the light receiving region. FIG. 5 shows a vertical cross-sectional view of the periphery of the light receiving region.

In this embodiment, the arrangement pitch of the on-chip microlenses 14 in the vertical direction (the horizontal direction in FIG. 4) is smaller than the arrangement pitch of the photodiodes 2 in the column direction. Further, although not shown, at the center of the light receiving region, the center of the photodiode 2 and the center of the on-chip micro lens 14 are on the same straight line.

For this reason, as the distance from the center of the light receiving region to the peripheral portion (in the direction of arrow a) increases, the photodiode 2
Is shifted from the center of the corresponding on-chip microlens 14. That is, as shown in FIG. 4, the incident light can be collected at the center of the light receiving portion even in the peripheral portion. As a result, it is possible to reduce the sensitivity unevenness in the central part and the peripheral part. At the same time, sensitivity can be improved because incident light can be effectively received even in the peripheral portion.

In this embodiment, the arrangement pitch of the on-chip microlenses 14 is
Is smaller than the arrangement pitch in only the horizontal direction. In the present embodiment, as shown in FIG. 5, since there is no light-shielding film in the vertical direction, all the incident light 15 enters the photodiode 2, so that it is not necessary to condense the light in the vertical direction. For this reason,
It is not necessary to make the arrangement pitch of the on-chip microlenses 14 smaller than the arrangement pitch of the photodiodes 2 in the vertical direction.

As in this embodiment, one direction (horizontal direction)
Reducing the array pitch only in the two directions (horizontal and
In comparison with changing the arrangement pitch (in the vertical direction), there is an advantage that the production of the on-chip microlens 14 is facilitated and the accuracy is improved.

The on-chip micro lens 14 is
The same effect can be obtained even when the pitch is small in both the horizontal and vertical directions. In the present embodiment, the on-chip micro lens is described as a dome type. However, for example, a horizontal direction such as a lenticular type on-chip micro lens or a two-stage lens parallel to each column of the vertical CCD 3 is used. An on-chip micro lens or the like having a different lens curvature from the vertical direction may be used.

In this embodiment, the openings 9 of the metal light-shielding film 8 are described as being formed in stripes in a direction parallel to each column of the vertical CCD 3. However, the openings 9 are formed in a matrix at a predetermined pitch on the photodiodes. The same effect can be obtained also in the opening of the provided light-shielding film.

Further, in this embodiment, the case where the on-chip color filter is provided has been described. However, the same effect can be obtained with a monochrome solid-state imaging device without the on-chip color filter.

(Embodiment 3) FIGS. 6 and 7 are cross-sectional views in a vertical direction and a horizontal direction in a peripheral portion of a light receiving region of the same solid-state imaging device according to Embodiment 3 of the present invention. The vertical direction is a column direction of the vertical CCD, and the horizontal direction is a direction orthogonal to the column direction. FIG. 6 shows a horizontal cross-sectional view of the periphery of the light receiving region. FIG. 7 is a vertical cross-sectional view of the periphery of the light receiving region.

In the present embodiment, in the vertical direction (horizontal direction in FIG. 6), that is, in the direction horizontal to each column of the vertical CCD 3, the arrangement pitch of the on-chip color filters A12 and B13 is the arrangement pitch of the photodiodes 2 in the column direction. Smaller than. Further, although not shown, at the center of the light receiving region, the center of the photodiode 2 and the center of the on-chip color filter A12 or B13 are on the same straight line.

Therefore, as the distance from the center of the light receiving region to the peripheral portion (in the direction of arrow a) increases, the photodiode 2
Is shifted from the center of the corresponding on-chip color filter A12 or B13. That is, as shown in FIG. 6, all the incident light rays 15 that have passed through one on-chip color filter in an inclined state enter one corresponding photodiode 2. As a result, good characteristics can be obtained without adjacent colors being mixed and without deterioration in color reproducibility.

In the present embodiment, in the horizontal direction (horizontal direction in FIG. 7), that is, in the direction perpendicular to each column of the vertical CCDs 3, the arrangement pitch of the on-chip microlenses 14 is determined by the arrangement between the columns of the photodiodes 2. It is smaller than the pitch. Further, although not shown, at the center of the light receiving region, the center of the photodiode 2 and the center of the on-chip micro lens 14 are on the same straight line.

Therefore, as the distance from the center of the light receiving region to the peripheral portion (in the direction of arrow a) increases, the photodiode 2
Is shifted from the center of the corresponding on-chip microlens 14. That is, as shown in FIG. 7, incident light can also be condensed at the center of the light receiving portion even in the peripheral portion. As a result, it is possible to reduce the sensitivity unevenness in the central part and the peripheral part. At the same time, sensitivity can be improved because incident light can be effectively received even in the peripheral portion.

In this embodiment, the pitch of the on-chip color filters is described as being smaller in the vertical direction only than the array pitch of the photodiodes 2. However, the pitch in both the vertical and horizontal directions is reduced. The same effect can be obtained even if the arrangement is small.

In the present embodiment, the pitch of the on-chip microlenses 14 is described as being smaller only in the horizontal direction than the array pitch of the photodiodes. The same effect can be obtained even if the arrangement is small.

In this embodiment, the dome-shaped on-chip microlens for condensing incident light has been described, but, for example, a lenticular-type on-chip microlens oriented parallel to each column of the vertical CCD 3. Alternatively, an on-chip microlens having a different horizontal and vertical lens curvature, such as a two-stage lens or the like, may be used.

In the present embodiment, the opening of the metal light-shielding film is oriented in the direction parallel to each column of the vertical CCD (vertical direction).
Although it has been described that the light-shielding film is formed in a stripe shape, the same effect can be obtained also in the openings of the light-shielding film provided at a predetermined pitch in a matrix on the photodiode.

[0066]

As described above, according to the solid-state imaging device of the present invention, the arrangement pitch of the on-chip color filters is smaller than the arrangement pitch of the photodiodes, and at the center of the light receiving region, And the center of the photodiode are on the same straight line, thereby preventing color mixture due to incident light from an oblique direction in the periphery of the light receiving region, and achieving good characteristics without deterioration in color reproducibility. Obtainable.

Further, the arrangement pitch of the on-chip microlenses is smaller than the arrangement pitch of the photodiodes, and at the center of the light receiving region, the center of the on-chip microlens and the center of the photodiode are on the same straight line. Since the incident light from the oblique direction in the peripheral portion of the light receiving region can be condensed at the center of the opening of the light shielding film, sensitivity unevenness in the central portion and the peripheral portion can be reduced. In addition, the sensitivity can be improved because the incident light at the periphery of the light receiving area can be effectively received.

[Brief description of the drawings]

FIG. 1 is a vertical cross-sectional view of a periphery of a light receiving region of a solid-state imaging device according to a first embodiment of the present invention.

FIG. 2 is a horizontal cross-sectional view of a periphery of a light receiving region of the solid-state imaging device according to the first embodiment of the present invention.

FIG. 3 is a vertical cross-sectional view of the periphery of a light receiving region of the solid-state imaging device when the on-chip micro lens is a lenticular type parallel to the vertical CCD in the first embodiment of the present invention.

FIG. 4 is a vertical cross-sectional view of a solid-state imaging device according to a second embodiment of the present invention in a peripheral portion of a light receiving region.

FIG. 5 is a horizontal cross-sectional view of a periphery of a light receiving region of the solid-state imaging device according to the second embodiment of the present invention.

FIG. 6 is a vertical cross-sectional view of a solid-state imaging device according to a third embodiment of the present invention in a peripheral portion of a light receiving region.

FIG. 7 is a horizontal cross-sectional view of a periphery of a light receiving region of a solid-state imaging device according to a third embodiment of the present invention.

FIG. 8 is a vertical cross-sectional view of a central portion of a light receiving region of an example of a conventional solid-state imaging device.

FIG. 9 is a vertical cross-sectional view of a peripheral portion of a light receiving region of an example of a conventional solid-state imaging device.

FIG. 10 is a vertical cross-sectional view of a central portion of a light receiving region of an example of a conventional solid-state imaging device.

FIG. 11 is a horizontal cross-sectional view of a peripheral portion of a light receiving region of an example of a conventional solid-state imaging device.

[Explanation of symbols]

 Reference Signs List 1 semiconductor substrate 2 photodiode 3 vertical CCD 4 separation unit between CCDs 5 separation unit between photodiodes 6 polysilicon electrode 7 oxide film 8 metal light shielding film 9 opening of light shielding film 10 insulating film 11 flattening layer 12 on-chip color filter A 13 On-chip color filter B 14 On-chip micro lens 14a Lenticular on-chip micro lens 15 Incident light beam 16 Signal charge

Claims (13)

[Claims] 1. Photodiodes arranged at a predetermined pitch in a light receiving area, CCDs alternately arranged with each row of the photodiodes, and for condensing incident light formed above the photodiodes A solid-state imaging device, comprising: an on-chip microlens; and an on-chip color filter formed between the photodiode and the on-chip microlens. A solid-state imaging device, wherein the center of the on-chip color filter and the center of the photodiode are on the same straight line at a center of the light receiving region smaller than an arrangement pitch of the diodes. 2. The CCD section is covered with a metal light-shielding film, and the metal light-shielding film has a stripe-shaped or matrix-shaped opening parallel to each column of the CCD. Solid-state imaging device. 3. The C of the on-chip color filter
The solid-state imaging device according to claim 1, wherein an array pitch in a direction parallel to each column of the CD is smaller than an array pitch of the photodiodes in a column direction. 4. The arrangement pitch of the on-chip microlenses is smaller than the arrangement pitch of the photodiodes, and at the center of the light receiving region, the center of the on-chip microlens is the same as the center of the photodiode. The solid-state imaging device according to claim 1, which is on a line. 5. The CCD section is covered with a metal light-shielding film, and the metal light-shielding film has a stripe-shaped or matrix-shaped opening parallel to each column of the CCD. Solid-state imaging device. 6. The C of the on-chip color filter
The array pitch in the direction parallel to each column of the CD is smaller than the array pitch of the photodiodes in the column direction, and the array pitch of the on-chip microlens in the direction perpendicular to each column of the CCD is the photodiode. The solid-state imaging device according to claim 4, wherein the arrangement pitch is smaller than the arrangement pitch between the columns. 7. Photodiodes arranged at a predetermined pitch in a light receiving area, CCDs alternately arranged in each row of the photodiodes, and for condensing incident light formed above the photodiodes. A solid-state imaging device comprising an on-chip microlens, wherein the CCD section is covered with a metal light-shielding film, and the metal light-shielding film has a stripe-shaped or matrix-shaped opening parallel to each column of the CCD. Part is formed, the arrangement pitch of the on-chip microlenses is smaller than the arrangement pitch of the photodiodes, and at the center of the light receiving region, the center of the on-chip microlens and the center of the photodiode are A solid-state imaging device which is on the same straight line. 8. The C of the on-chip microlens
The solid-state imaging device according to claim 7, wherein an arrangement pitch in a direction perpendicular to each column of the CD is smaller than an arrangement pitch between the columns of the photodiodes. 9. The solid-state imaging device according to claim 8, wherein an array pitch of the on-chip microlenses in a direction horizontal to each column of the CCD is smaller than an array pitch of the photodiodes in a column direction. 10. The solid-state imaging device according to claim 7, further comprising an on-chip color filter provided between said photodiode and said on-chip micro lens. 11. The arrangement pitch of the on-chip color filter in a direction parallel to each column of the CCD is smaller than the arrangement pitch of the photodiodes in the column direction, and at the center of the light receiving region, the on-chip color filter is provided. The solid-state imaging device according to claim 10, wherein a center of the filter and a center of the photodiode are on a same straight line. 12. The arrangement according to claim 3, wherein an arrangement pitch of the on-chip color filters in a direction perpendicular to each column of the CCD is smaller than an arrangement pitch between the columns of the photodiodes. Solid-state imaging device. 13. The solid-state imaging device according to claim 1, wherein said on-chip micro lens is of a lenticular type parallel to each row of said CCD.