JPH11102860A - Projection exposure device and method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To eliminate variation in a patterned image due to the thermal deformation of a reticle and to make the image formation of the high-accuracy patterned image possible by a method, wherein a projection exposing device is formed into a constitution/wherein in formation for correcting a variation of the image-formation characteristics of the patterned image, which is generated due to the thermal deformation of a mask, is sought on the basis of information on the characteristics of the mask. SOLUTION: Lens elements of a projection optical system PL are driven, whereby a projection exposure device is formed into a constitution/wherein the coupling characteristics, such as projection magnification and distortion of the device are corrected. Moreover, for making the optical characteristics of the system PL adjustable, one part of the optical elements of a system P1 is made movable. A first group of the lens elements 30 and 31 closest to a reticle R are fixed by a support member 32, and at the same time a second group of the lens elements 33 are fixed by a support member 34 and a third group of the lend elements 35 are fixed by a support member 36. Moreover, the lens elements under the lower parts of the elements 35 are respectively fixed on a lens tube 37 of the system PL.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a projection exposure apparatus and a method which require high image forming characteristics, such as a pattern exposure apparatus for manufacturing a semiconductor, and more particularly to maintenance of the image forming characteristics. .

[0002]

2. Description of the Related Art Conventionally, as a pattern of a semiconductor integrated circuit becomes finer, in a projection optical device, a change in image forming characteristics (for example, magnification and focal position) caused by the projection optical system absorbing exposure light. The need for correction has arisen.
For example, JP-A-60-78455 or JP-A-63-5845
As disclosed in Japanese Patent Application Laid-Open No. 8349, a mechanism for detecting the amount of light incident on the projection optical system and correcting a change in the optical characteristics of the projection optical system has been provided.

In brief, a model corresponding to the fluctuation characteristic of the imaging characteristic is created in advance, the amount of light energy incident on the projection optical system is obtained by a photoelectric sensor or the like on the stage, and the amount of the fluctuation is measured with time. Calculate according to this model. That is, the shutter O during the exposure operation
The PEN signal is received, and the amount of change in the optical characteristics is always calculated during exposure according to the model, and correction is performed based on the amount of change.

[0004]

In the above technology, the problem of the exposure optical system absorbing the exposure light has been solved. However, since the exposure light beam also passes through the mask, there is a problem that the mask is thermally deformed by the absorption of the exposure light, thereby causing a change in imaging characteristics. In particular, since the mask is patterned with chrome or the like, unlike a glass member having a high transmittance, heat absorption in the chrome portion is large. further,
In recent years, there has been a tendency to adopt a technique of reducing the reflection of chromium on a mask for the purpose of preventing flare in an optical system, but this further increases the heat absorption of the chrome portion.

It is conceivable that the temperature of the glass portion of the mask also increases due to the heat absorption of the chrome portion, and the entire mask thermally expands. According to actual measurement, the temperature rise of the mask increases by about 5 ° C. under the worst conditions. This means that even if the material of the mask is quartz glass and the coefficient of expansion is 0.4 ppm / ° C, it is 0.02μ at 10 mm intervals.
A shift of m occurs, causing a distortion error or a magnification error on the image plane.

In addition, the chromium pattern of the mask is not always uniformly distributed over the entire mask, but may be in an uneven distribution state. In this case, the temperature of the mask locally increases, and anisotropic distortion may occur. Similarly, when only a part of the mask is exposed using a light-shielding band (variable field stop) or the like, anisotropic distortion may occur.
Due to the distortion of the mask thus generated, anisotropic distortion occurs in the projected image. In this case, it is insufficient to correct only the magnification component.

[0007] When thermal deformation of the mask occurs, in the conventional technique, the optical characteristics are shifted depending on the type of the mask used. In other words, the thermal deformation of the mask used for adjustment at the time of shipment is recognized as a change characteristic of the optical characteristics of the projection optical system and is corrected. However, when another mask is used, the correction cannot be completed because the thermal deformation is different. . Further, in the case of performing exposure while changing masks one after another, a large error may occur because the thermal deformation of each mask is not considered in the conventional technology.

As a countermeasure, for example, a method of cooling the mask to a constant temperature can be considered. However, since the glass surface temperature of the mask and the temperature of chromium cannot be kept constant, it is impossible to cool the entire mask without heat distribution uniformly. It is possible. In addition, there is also a problem that the response is poor due to the phenomenon involving heat conduction in cooling, and the shutter cannot follow ONEN and CLOSE of the shutter.
Unrealistic.

[0009] These points, which have not been a problem in accuracy in the past, are considered to be important for projection patterns that are becoming increasingly finer in recent years or in the future. An object of the present invention is to provide a projection optical apparatus capable of satisfactorily correcting a change in optical characteristics caused by thermal deformation of a mask in view of these problems.

[0010]

According to the present invention, a mask (R) is irradiated with an exposure beam (IL), and an image of a pattern formed on the mask is exposed through a projection optical system (PL). (W) A projection exposure method for exposing the substrate to be exposed by projecting the mask (R)
The information on the absorption of the exposure beam by the mask is acquired, and the amount of change in the imaging characteristic of the pattern image caused by the absorption of the exposure beam by the mask is obtained based on the acquired information.

The exposure beam (IL) is masked by a mask (R).
And a projection exposure apparatus that exposes the substrate (W) by projecting an image of a pattern formed on the mask onto the substrate (W) via the projection optical system (PL). Detecting means (5) for detecting information on absorption of exposure light of the mask (R), and the pattern caused by absorption of the exposure beam of the mask (R) based on the information detected by the detecting means (5). A correction means (38 to 40) for correcting a change in the image forming characteristic of the image is provided.

[0012]

According to the present invention, information relating to absorption of an exposure beam (illumination light) by a mask is obtained, and a change in the image formation state of a pattern image on the mask is predicted based on the information. Therefore, using this result, it is possible to maintain the imaging state of the pattern image of the mask constant, or to perform correction for minimizing the influence of the fluctuation of the imaging state.

Further, information on absorption of the exposure beam (illumination light) by the mask is obtained, and the fluctuation of the image forming state of the pattern image on the mask is corrected based on the information. It is possible to maintain.

[0014]

DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment of the present invention will be described below with reference to the drawings. FIG. 1 is a plan view showing a schematic configuration of a projection optical device according to an embodiment of the present invention. In FIG. 1, an illumination light source 1 for exposure, such as an ultra-high pressure mercury lamp or an excimer laser light source, has a wavelength (e.g., g-line, i-line, or ultraviolet pulse light (for example, a KrF excimer laser)) that exposes a resist layer. The illumination light IL having an exposure wavelength is generated. The illumination light IL passes through a shutter 2 that closes and opens the optical path of the illumination light and a semi-transmissive mirror 4 that allows most (90% or more) of the illumination light to pass, and then passes through an optical integrator (fly-eye lens) and the like. To the illumination optical system 6. The shutter 2 is driven by a driving unit 3 so as to control transmission and blocking of illumination light. In addition, the semi-transmissive mirror 4
A part of the illumination light reflected by is incident on a photoelectric detector (power monitor) 5 such as a PIN photodiode. The power monitor 5 photoelectrically detects the illumination light IL to obtain light information (intensity value).
PS is output to the main control system 20, and this information PS is basic data for obtaining the amount of change in the imaging characteristics of the projection optical system PL in the main control system 20 (details will be described later).

The illumination light IL, which has been made uniform in the light beam and reduced in speckles, etc. in the illumination optical system 6, is transmitted to a mirror 7
After passing through the relay lenses 9a and 9b and the variable blind 10, the light is reflected vertically downward by the mirror 12 to reach the main condenser lens 13, and illuminates the pattern area PA of the reticle R with uniform illuminance. Since the surface of the variable blind 10 has an image forming relationship with the reticle R, the operating field of the variable blind 10 is opened and closed by the drive motor 11 to change the opening position and shape, so that the illumination field of the reticle R can be arbitrarily selected. can do. In the present embodiment, the reflected light generated from the wafer W by the irradiation of the illumination light IL passes through the mirror 7 and is incident on the photodetector (reflection amount monitor) 8. The reflection amount monitor 8 photoelectrically detects the reflected light and outputs optical information (intensity value) RS to the main control system 20, where the information R
S is basic data for determining the amount of change in the imaging characteristics of the projection optical system PL (details will be described later).

The reticle R is mounted on a reticle stage RS which can move two-dimensionally in a horizontal plane, and has a pattern area PA.
Are positioned so that the center point of the optical axis coincides with the optical axis AX. The initial setting of the reticle R is performed by finely moving the reticle stage RS based on a mark detection signal from a reticle alignment system RA that photoelectrically detects an alignment mark (not shown) around the reticle. The reticle R is used after being appropriately replaced by a reticle exchanger (not shown). In particular, when performing high-mix low-volume production, replacement is frequently performed.

The illumination light IL that has passed through the pattern area PA is incident on a projection optical system PL that is telecentric on both sides, and the projection optical system PL forms a projected image of the circuit pattern of the reticle R, and a resist layer is formed on the surface. The surface is superimposed and projected (imaged) on one shot area on the wafer W held so that its surface substantially coincides with the image plane IM. The wafer W is mounted on a Z stage 14 that can be finely moved in the optical axis direction (Z direction) by a drive motor 17. And Z
The stage 14 is an XY stage 15 that can be two-dimensionally moved by a drive motor 18 in a step-and-repeat manner.
When the transfer exposure of the reticle R to one shot area on the wafer W is completed, the XY stage 15 is stepped to the next shot position. The two-dimensional position of the XY stage 15 is always detected by the interferometer 19 with a resolution of, for example, about 0.01 μm, and a movable mirror 14 m that reflects the laser beam from the interferometer 19 is fixed to the end of the Z stage 14. ing.

On the Z stage 14, an irradiation amount monitor (for example, a photoelectric detector having a light receiving surface having substantially the same area as the image field of the projection optical system PL or the projection area of the reticle pattern) 16 is provided on the surface of the wafer W. It is provided so as to substantially coincide with the position, and information L on the irradiation amount is provided.
S is also sent to the main control system 20 and serves as basic data for determining the amount of change in the imaging characteristics of the projection optical system PL.

In FIG. 1, an image forming light beam or a parallel light beam for forming an image of a pinhole or a slit toward an image forming plane IM of the projection optical system PL is obliquely formed with respect to the optical axis AX. An oblique incidence type surface detection system 2 including an irradiation optical system 22a for supplying and a light receiving optical system 22b for receiving a light beam reflected on the wafer surface of the image light beam or the parallel light beam.
2 are provided. Here, the configuration and the like of the surface detection system 22 are disclosed in, for example, Japanese Patent Publication No. 2-10361, and the position of the wafer surface in the vertical direction (Z direction) with respect to the image plane IM is detected, and Projection optical system PL
And a horizontal position detection system that detects the inclination of a predetermined area on the wafer W with respect to the image plane IM.

In this embodiment, the angle of a parallel flat glass (not shown) provided beforehand in the light receiving optical system 22b is adjusted so that the image plane IM becomes the zero point reference, and the focal point is adjusted. When the detection system is calibrated and the surface of the wafer W coincides with the image plane IM, the parallel light beam from the irradiation optical system 22a is supplied to a four-divided light receiving element (not shown) inside the light receiving optical system 22b. It is assumed that calibration of the horizontal position detection system has been performed so that light is condensed at the center position.

Next, the structure of the correcting means for correcting the image forming state will be described. In the present embodiment, as will be described in detail later, the image forming characteristics (projection magnification, distortion, etc.) are corrected by driving the lens element of the projection optical system PL. In order to adjust the characteristics, a part of the optical element is movable. As shown in FIG. 1, the first group of lens elements 30 and 31 closest to the reticle R are fixed by a support member 32, the second group of lens elements 33 are fixed by a support member 34, and
The group of lens elements 35 is fixed to a support member 36. Further, the lens elements below the lens element 35 are fixed to the lens barrel 37 of the projection optical system PL. In this embodiment, the optical axis AX of the projection optical system PL indicates the optical axis of the lens element fixed to the lens barrel 37. The support member 36 is connected to the lens barrel 37 of the projection optical system PL by extendable drive elements 40a, 40b, and 40c.

The support member 34 is connected to the support member 36 by extendable drive elements 39a, 39b, 39c, and the support member 32 is extended and retractable drive element 38.
a, 38b, 38c are connected to the support member 34. Here, in this embodiment, the lens elements 30, 31, 3 close to the reticle R are controlled by the drive element control unit 23.
3 and 35 are movable, and these elements are selected such that the influence on magnification and distortion characteristics is large and easy to control as compared with other lens elements. In this embodiment, since the movable lens element has a three-group configuration, the movement range of the lens element can be increased while suppressing the fluctuation of other aberrations, and various shape distortions (trapezoid, rhombus, barrel, Pincushion type, etc.), and can sufficiently cope with fluctuations in the imaging characteristics of the projection optical system PL caused by thermal deformation of the reticle R due to absorption of exposure light. The movement of the lens element is performed within a range where the influence on other aberrations (eg, astigmatism) of the projection optical system PL can be ignored.

Alternatively, a method may be adopted in which the magnification and distortion characteristics are controlled and other aberrations are corrected by adjusting the distance between the lens elements. FIG. 2 is a view of the projection optical system PL viewed from above (the reticle side). The driving elements 38a to 38c are arranged at positions rotated by 120 °, and can be independently controlled by the driving element control unit 23. I have. Also,
Similarly, the driving elements 39a to 39c and 40a to 40c are also rotated by 120 °, respectively, and can be independently controlled by the driving element control unit 23. Driving elements 38a, 39a and 40a are arranged at a shift of 40 ° from each other, and driving elements 38b, 39b and 40b and 38c, 39c and 40c are similarly shifted from each other by 4 °.
They are offset by 0 °. As the driving elements 38 to 40, for example, an electrostrictive element or a magnetostrictive element is used, and a displacement amount of the driving element according to a voltage or a magnetic field applied to the driving element is obtained in advance. Although not shown here, in consideration of the hysteresis of the driving element, a capacitive position sensor as a position detecting device, a differential transformer, and the like are provided near the driving element. Therefore, the position of the driving element corresponding to the voltage or the magnetic field applied to the driving element can be monitored, so that highly accurate driving can be performed.

With the above configuration, three peripheral points of the three lens elements (30, 31), 33 and 35 are independently driven by a drive command given from the main control system 20 in the direction of the optical axis AX of the projection optical system PL. It can be moved by a corresponding amount. As a result, the three lens elements (30, 3)
1) Each of 33, 35 can be moved in parallel substantially along the optical axis AX, and can be arbitrarily inclined with respect to a plane substantially perpendicular to the optical axis AX.
It is assumed that each of the lens elements is inclined with the optical axis AX being virtually assumed as an inclination reference.

The main control system 20 obtains information from the power monitor 5, the reflection amount monitor 8, and the irradiation amount monitor 16, and calculates the fluctuation amount of the imaging characteristic of the projection optical system PL by calculation as described later. The entire device including the drive element control unit 23 is totally controlled. A memory 21 stores various data (such as the type of light shielding member of the mask and the density distribution of the pattern) necessary for calculating the amount of thermal deformation of the mask due to exposure light absorption. Further, a mathematical expression, a table, or the like for calculating the amount of change in the imaging state based on the amount of thermal deformation is also stored.

Next, a description will be given of a method of calculating the amount of change in the imaging characteristic in this embodiment. The present invention corrects the fluctuation of the imaging characteristic caused by the thermal deformation of the reticle R. In this embodiment, when calculating the fluctuation amount of the imaging characteristic, first, the heat of the reticle R is calculated. Find the amount of deformation. Less than,
The method will be described. Since the thermal deformation of the reticle R may be considered to occur in proportion to the temperature distribution of the reticle R, the amount of thermal deformation may be calculated by knowing the temperature distribution of the reticle R at a certain time. For example, as a method of simulating the temperature distribution by a computer, a method is known in which the reticle R is decomposed into certain finite elements and the temperature change at each point is calculated by a difference method, a finite element method, or the like. In the present embodiment, description will be made using a simple difference method.

First, the square exposure area of the reticle R is divided into 16 blocks of 4.times.4 as shown in FIG. The center points of the blocks are P1 to P16. The selection of the number of divisions or the calculation method is determined in consideration of the finally required accuracy, the calculation speed of the computer, and the like. In the present embodiment, the number of divisions is only 16 for convenience.

The reticle R is uniformly illuminated via the illumination optical system 6 when the shutter 2 is open. However, the amount of heat absorbed on the reticle R varies depending on the location due to the pattern distribution of the reticle R. Therefore, reticle R
The pattern existence rate is obtained for each of the above blocks B1 to B16. At this time, it is assumed that the amount of heat absorbed in each block is uniform.

The pattern existence ratio of each block is obtained, for example, by the output ratio between the irradiation amount monitor 16 on the Z stage 14 and the power monitor 5. The irradiation amount monitor 16 is the Z stage 1
4 is a photocell having a light receiving surface having a diameter substantially equal to the image field of the projection optical system PL. Z
By moving the stage 14, the irradiation amount monitor 16 is sent to almost the center of the projection optical system PL, all the exposure light irradiated onto the wafer W is received and photoelectrically detected, and the wafer is irradiated via the reticle R or the like. The irradiation amount of the exposure light reaching W is calculated. The irradiation amount depends on the power of the illumination light, the transmittance of the reticle R, the size of the variable blind 5, and the like. The irradiation amount monitor 16 is divided into 16 parts corresponding to the reticle R divided into 16 parts, so that the amount of light passing through each block and forming an image can be measured independently. At this time, the dose monitor 1 is
After accurately positioning the reticle R with the reticle 6, the measurement is performed. First, each output of the irradiation amount monitor 16 and the power monitor 5 are output using a reticle on which no pattern is drawn in advance.
The output ratio is determined in advance, and the output ratio is measured with a reticle on which the pattern is drawn to determine the pattern existence ratio.

This measurement may be performed every time the reticle is replaced, or may be measured in advance and stored in the memory 21. In addition, the irradiation amount monitor 16 does not need to be divided when the area of each block is equal.
An irradiation amount monitor having a size corresponding to one block may be prepared on the stage, and the measurement may be performed by stepping the stage. Of course, there is no need for measurement if the pattern existence rate is known from the data at the time of manufacturing the reticle.

Now, each block B1 obtained as described above
The amount of heat absorption of each block is calculated based on the pattern abundance of B16. Each block absorbs heat in proportion to the power of the light source 1 and the pattern existence rate. The absorbed heat is
It escapes in the air or via the reticle holder 8. Heat also moves between the blocks. Here, for example, the movement of the amount of heat between two objects is considered. It is considered that the movement of the heat amount in this case is basically proportional to the temperature difference between the two objects. Further, the rate of change of the temperature change due to the movement of the amount of heat is proportional to the amount of movement of the amount of heat. These can be expressed as follows.

[0032]

(Equation 1)

[0033]

(Equation 2)

[0034]

(Equation 3)

Where ΔQ is the amount of heat transferred, T ₁ and T ₂ are the temperatures of the respective objects, t is time, and K ₁ , K ₂ and K ₃ are proportional constants. From equations (1) to (3)

[0036]

(Equation 4)

[0037]

(Equation 5)

Holds. This is a well-known first-order lag system, and when there is a temperature difference between T ₁ and T ₂ ,
Both draw an exponential curve and reach a certain temperature. The heat distribution on the reticle R is calculated based on the above equation. First, attention is paid to the block B1. B1 exchanges heat (heat transfer) with the adjacent blocks B5 and B2.
Although the reticle holder 8 and the air also exchange heat, the temperature of the air and the temperature of the reticle holder 8 are kept constant for simplicity. Set the temperature of each block from T ₁ to
T ₁₆ , the temperature of the air is T ₀ , the temperature of the reticle holder 8 is T _H
Then, the following equation holds for the temperature T _{1 of the} block B.

[0039]

(Equation 6)

Where dT ₁ / dt is the time derivative of T ₁ , K ₁₂ ,
K ₁₅ Each of heat exchange blocks B1 and B2, B5 coefficients, the coefficient of exchange of heat between the K ₁₀ reticle holder 8 and the block B1, K ₀ is the coefficient of exchange of heat between the block and the air It is. Further, η ₁ is the pattern existence ratio of the block 1, and P is the power of the light source 1 and corresponds to the output of the power monitor 5. K _P is a coefficient relating the amount of heat absorbed by each block to the light and η ₁ and P. The last term of equation (6) shows the amount of heat absorbed from the illumination light, and the other terms show the process of dispersing the absorbed heat. Here, T _H and T ₀ are constant, T _H = T _0, and the temperature of each block can be expressed by T ₀ + ΔT. Since each block on the reticle is made of quartz glass, K ₁₂ and K ₁₃ …
Taking into account that all are equal, Equation (6) becomes as follows.

[0041]

(Equation 7)

Equation (7) is obtained for each of the blocks B1 to B16, and this is expressed by the following equation when expressed in a matrix expression.

[0043]

(Equation 8)

This is a 16-way simultaneous differential equation of the first order, and can be solved by a numerical solution method. Alternatively, the form of the derivative is a small time (calculation cycle of the computer)
Can be solved by a method of expressing and solving the difference of the values in the difference format, that is, the difference method. In equation (8), the so-called external force term is the last term, so if the value of each block per unit time, that is, the value of η ₁ P ₁ , η ₂ P ₂ ,. The value of ΔT ₁ , ΔT ₂ . Pattern existence ratio eta _1, eta ₂ ... are obtained by actual measurement as described above, obtained by the incident light amount P _1, P ₂ ... power monitor 5 and irradiation monitor 16.

Each coefficient K _R , K _O , K _H , K _P is a reticle,
It can be obtained by calculation from the physical properties of air, the flow velocity of air, and the like. Alternatively, it is also possible to conduct experiments on various reticles and determine that each coefficient best matches the reality. Thus, the temperature distributions ΔT _{1 to} ΔT ₁₆ are obtained. From these and the expansion coefficient of quartz glass, each block B ₁
Mutual distance changes the center point P ₁ to P ₁₆ of .about.B ₁₆ 6 is obtained, it is possible to determine the movement of each point on the reticle, on the basis of this, variation in imaging characteristics, for example, on the wafer W Can be calculated.

In the above-described method, the temperature distribution ΔT of the reticle is first obtained, then the motion of the center point P is obtained, and the image distortion is obtained. However, instead of ΔT, the image distortion (distortion, image plane) is directly obtained. It is also possible to calculate the curvature. At this time, if the coefficients K _R , K _O , K _H , and K _P are obtained by experiments, the coefficients include a change in the deflection of the reticle R and the like. In addition, when the thermal conductivity of the reticle R is very good, and there is only a part of the pattern or only part of the light is illuminated, if there is no problem in accuracy even if it is considered that the reticle R expands uniformly, There is no need for complicated calculations as described above, and simpler calculations are required.

Next, a method for correcting an image forming state will be described. Basically, as described above, the three lens elements (30, 31), (33), and (35) of the projection optical system are driven in the optical axis direction or in the tilt direction with the axis perpendicular to the optical axis as the rotation axis. Thereby, a desired imaging state is obtained. Here, for the sake of simplicity, the explanation will be limited to distortion, but correction of curvature of field and the like is also possible by this method. Changes in distortion due to driving of the lens elements 30 and 31 will be described with reference to FIGS. Actually, the manner of change differs depending on the configuration of the lens element. Therefore, the diagram shown here is one example and is not general. First, the lens element 30 or 3
When 1 is moved in the optical axis direction, the magnification changes around the optical axis. This is shown in FIG.

When the lens element 12 or 13 is inclined about an axis perpendicular to the optical axis, for example, the distortion changes as shown in FIG.
In this example, the image portion away from the rotation axis changes in a direction perpendicular to the rotation axis. Thus, various distortions can be corrected by a combination of the driving methods of the lens element groups (30, 31), (33), and (35). Driving the lens element to correct the distortion may cause other aberrations (for example, coma and astigmatism) to worsen. However, since a plurality of lens elements can be driven, the aberration is corrected. In this way, it is possible to perform desired distortion correction.

The movement of the points P _{1 to} P ₁₆ on the image plane as shown in FIGS. 5 and 6 is stored in the memory 21 in the form of a mathematical expression or a table. Calculate the distortion correction amount. As a calculation method, for example, ideal lattice points of P _{1 to} P ₁₆ or
Distortion correction that satisfies the condition of minimizing the maximum value of the deviation or the condition of minimizing the sum of squares of the deviation with respect to the lattice point (shown by a dotted line in FIGS. 4 to 6) where the reticle R is cold is performed. Conceivable.

The above is a description of the distortion correcting means. However, there is a possibility that the image plane may change (vertically move or tilt) by driving the lens element groups (30, 31), (33) and (35). However, if an offset is given to the wafer surface detection system 22 in accordance with this change, the wafer W is always set to the best image plane, so that this effect can be prevented.
Of course, when the thermal deformation of the reticle R affects the image plane, the correction can be performed by the same method as the above-described distortion. As described above, the wafer surface detection system 22 irradiates a light beam on the wafer surface and detects the position or inclination of the wafer surface in the optical axis direction based on the reflected light. The main control system 20 controls the Z stage 14 according to the output of the wafer surface detection system 22, and the Z stage is driven so that the wafer W and the image plane always coincide.

The means for correcting the image forming state may include a method of moving, tilting, or bending the reticle R in the optical axis direction, or providing an airtight space inside the projection optical system 9 (between the lens elements). A method of adjusting the pressure, a method of disposing a parallel plate glass above or below the projection optical system 9 and controlling the inside thereof to bend the glass can be considered. However, it is difficult to correct deformation that is not symmetric with respect to the optical axis as in the case of the present embodiment, and it is desirable to employ the method of the present embodiment. In the present embodiment, when the imaging characteristics of the projection lens PL, for example, the projection magnification can be changed with the driving of the lens, the magnification change may be corrected by using any of the above methods. . Further, for example, anisotropic distortion may be corrected by driving the lens element group, and other optical characteristics (projection magnification, curvature of field, etc.) may be corrected using the above method.

Next, the operation of this embodiment will be described. First, it is necessary to determine each parameter of the equation (8) for calculating the change in the imaging state due to the thermal deformation of the reticle R at the time of manufacturing the device and store it in the memory 21. The parameter KR relating to the heat conduction of the reticle _R is an amount determined by the material, thickness, and the like of the glass that is the main material of the reticle R. This can be determined by physical property values or experiments as described above. K _O and K _H are parameters related to heat transfer between the glass substrate and the reticle holder 8 or air, and these are also determined by the material of the glass substrate. Next, K _P is a parameter relating to heat absorption of the light shielding portion of the reticle R and the glass material.
The amount is determined by the material of the light shielding member of the reticle and the glass substrate.

These parameters need to be stored in the memory 21 in the form of a function or a table or the like of physical properties of glass or the like, which is the material of the reticle R. May be a constant value as long as is negligible. When the parameters are obtained by experiment, the projection optical system PL itself also absorbs the illumination light and changes the imaging state. Therefore, to measure the thermal deformation of only the reticle R purely, the following is performed. First, when both the reticle R and the projection optical system PL are sufficiently equilibrated with the external temperature, the wafer W is exposed to an image of the reticle R,
Thereafter, a light-shielding object is put between the reticle R and the projection optical system PL, and the shutter 2 is opened for a predetermined time to irradiate illumination light.
Next, the light-shielding object is removed, the image of the reticle R is exposed again on the wafer W, and the amount of change in the image formation state due to the thermal deformation of the reticle R can be known by comparing the image with the first exposed image. When the thermal deformation of the reticle R has been sufficiently corrected by this method, the illumination light absorption of the projection optical system 9 can be detected by irradiating the reticle R without any light-shielding material. Thereby, since the thermal change between the reticle and the projection optical system can be separated, the correction can be performed separately, and the correction can be accurately performed even if the reticle is replaced during operation. The illumination light absorption of the projection optical system 9 can be corrected by a conventional technique.

As described above, in order to calculate the amount of thermal deformation of the reticle R, the glass material of the reticle R, the type of light shielding material, the pattern existence ratio of each block, and the opening value of the variable blind 10 are required. Among them, the attribute of the reticle R is measured for each reticle or stored in the memory 21 in advance. The heat absorption of chromium, which is a light shielding portion, can be estimated to some extent from the reflectance of chromium. For this purpose, the reflection amount monitor 8 is used to correct the effect of the projection optical system 9 on the reflected light from the wafer W. First, bring a surface with a known reflectance under the projection optical system,
The reflected light component from the reticle surface is calculated from the output of the reflection amount monitor 8 at that time, the pattern abundance of the reticle R obtained in advance, and the reflected light component of another lens member or the like, and the reflectance is calculated. .

The reason why the opening value of the variable blind 10 is necessary for calculating the amount of thermal deformation of the reticle R is as follows. For example, the reticle R by the variable blind 10
This is because, unlike the case where the illumination light is illuminated only on the left half of the illuminated light, the displacement occurs only on the side where the light is illuminated as shown in FIG. Information about the aperture value of the variable blind 10 is obtained from a controller block of the variable blind 10. Further, information on the open / closed state of the shutter 2 can be obtained from the control block of the shutter 2.

In the exposure operation, light information (intensity value) is output from the power monitor 5, the reflection amount monitor 8, and the irradiation amount monitor 16 to the main control system 20. Main control system 20
Then, from these information and the respective data stored in the memory 21 described above, changes in the imaging state due to heat absorption between the reticle R and the projection optical system PL are calculated, and the total change amount is calculated. When the imaging state of the projection optical system PL changes due to other factors such as a change in atmospheric pressure, the amounts of these changes are also summed. An optimum correction amount is calculated for the total value, and the lens element driving elements 38 to
40 is driven to perform correction. Here, regarding the focal position and the image plane inclination, the wafer surface detection system 22 and the Z stage 1
By moving the wafer W up and down and tilting it using 4, the best imaging plane of the projection lens PL and the wafer surface can also be matched. In this embodiment, from the start of exposure to the time when the reticle is thermally stabilized, the above calculation is performed at regular time intervals to update the data on the amount of deformation of the reticle, and the lens element group is updated based on the updated data. May be driven, and it is possible to more accurately control the imaging characteristics.

The timing at which the above calculation is performed may be arbitrarily determined, and may be performed as appropriate according to, for example, the opening / closing time of the shutter 2. Alternatively, the above calculation may be always performed from the start of exposure. When the reticle R is replaced and used, it is necessary to calculate the thermal deformation of the reticle R again assuming that the new reticle R is sufficiently in equilibrium with the surroundings. For the waiting reticle R, the amount of thermal deformation is calculated in consideration of heat dissipation and the like, and when the reticle R is used again, the calculation is performed using the amount of deformation at that time as an initial value, so that more accurate correction can be performed. When the reticle is reused under the same exposure condition, the previous data (for example, the relationship between the irradiation time or the amount of stored energy and the amount of thermal deformation) is stored in the memory 2 as a table or the like.
If it is stored in 1, it is possible to control the imaging state with the same accuracy as in the present embodiment by driving the lens element group according to the irradiation time of the reticle or the amount of stored energy without performing the above calculation. Is also possible.

Although the method of holding the reticle R has not been described in the above embodiments, the thermal deformation of the reticle R actually depends on the holding method. For example, when the reticle R is held extremely strongly, when the reticle R expands, the reticle R may not be deformed in the plane direction but may be deformed so as to expand in the vertical direction. In this case, in the image formation state, not only the distortion but also the change in the image plane becomes large. Further, since the reticle R is originally deflected to some extent by its own weight, more accurate correction is possible by taking these factors into consideration.

In the above-described method, the thermal deformation is obtained by calculation, but it is also possible to actually measure it. For example, the temperature distribution of the reticle R can be obtained by a non-contact temperature sensor such as an infrared camera. It is also possible to put a mark at a reference point around the reticle R and measure the displacement of the mark to know the deformation of the reticle R. But,
With this method, it is difficult to know the deformation inside the reticle R. A reticle in which a plurality of circuit patterns are formed in a pattern area (so-called multi-die reticle)
In the case of (1), the mark can be arranged in the area corresponding to the street line inside the reticle. Therefore, the method of obtaining the amount of change of the reticle by the above measurement is also sufficiently effective.

In this embodiment, the temperature of the surrounding air or the reticle holder 8 is kept constant. However, the temperature can be measured by a temperature sensor to increase the accuracy of calculation. Alternatively, a device for keeping these temperatures constant may be used.

[0061]

As described above, according to the present invention, a change in the image formation state due to the absorption of illumination light by the reticle can be canceled, so that a more accurate image can be formed, and the overlay accuracy of the image and the like can be improved. The effect is improved. Therefore, it is possible to select a reticle that does not adversely affect the optical system such as the projection optical system or the wafer positioning system, such as flare, without considering the heat absorption of the light shielding member of the reticle.

[Brief description of the drawings]

FIG. 1 is a schematic diagram showing a configuration of a reduction projection type exposure apparatus (stepper) according to an embodiment of the present invention.

FIG. 2 is a view of the projection optical system as viewed from above.

FIG. 3 is a diagram showing a grid on the reticle divided into 16 parts.

FIG. 4 is a view schematically showing thermal deformation of a reticle.

FIG. 5 is a diagram showing a movement of a point in an image plane by an imaging state correction unit.

FIG. 6 is a diagram illustrating a movement of a point in an image plane by an imaging state correcting unit.

[Explanation of symbols]

 Reference Signs List 1 light source 10 variable blind R reticle PL projection optical system W wafer 20 main control system 30, 31, 33, 35 lens element

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[Procedure amendment]

[Submission date] August 21, 1998

[Procedure amendment 1]

[Document name to be amended] Statement

[Correction target item name] Claims

[Correction method] Change

[Correction contents]

[Claims]

[Procedure amendment 2]

[Document name to be amended] Statement

[Correction target item name] 0010

[Correction method] Change

[Correction contents]

[0010]

In order to achieve the above object, the present invention projects an image of a pattern formed on a mask (R) onto a substrate (W) via a projection optical system (PL). In the projection exposure method for exposing the substrate, information for correcting a change in the imaging characteristic of the pattern image caused by thermal deformation of the mask is obtained based on the information on the characteristic of the mask. I made it.

[Procedure amendment 3]

[Document name to be amended] Statement

[Correction target item name] 0011

[Correction method] Change

[Correction contents]

According to another aspect of the present invention, an image of a pattern formed on a mask (R) is projected onto a substrate (W) through a projection optical system (PL). The projection exposure apparatus for exposing includes an arithmetic unit (20) for obtaining information for correcting a change in an imaging characteristic of an image of the pattern caused by thermal deformation of the mask, based on characteristics of the mask. I did it.

[Procedure amendment 4]

[Document name to be amended] Statement

[Correction target item name] 0012

[Correction method] Change

[Correction contents]

[0012]

According to the present invention, information for correcting a change in the imaging characteristic of the pattern image of the mask due to thermal deformation of the mask is obtained based on the information on the characteristics of the mask. Therefore, using this result, it is possible to carry out correction to keep the imaging state of the image of the pattern of the mask constant or to minimize the influence of the fluctuation of the imaging state.

[Procedure amendment 5]

[Document name to be amended] Statement

[Correction target item name] 0013

[Correction method] Change

[Correction contents]

Therefore, the pattern of the mask can always be satisfactorily transferred onto the substrate without being affected by the thermal deformation of the mask.

[Procedure amendment 6]

[Document name to be amended] Statement

[Correction target item name] 0061

[Correction method] Change

[Correction contents]

[0061]

According to the present invention described above, the influence of the change in the image forming state of the pattern image due to the thermal deformation of the reticle is canceled, and a more accurate pattern image can be formed. Further, as the light-blocking member of the reticle, a member that does not adversely affect the optical system such as the projection optical system or the wafer positioning system, such as flare, without considering heat absorption or the like can be selected.

Claims (2)

[Claims] 1. A method of irradiating an exposure beam onto a mask,
In a projection exposure method for exposing the substrate to be exposed by projecting an image of a pattern formed on the mask onto the substrate to be exposed via a projection optical system, acquiring information on absorption of the exposure beam by the mask A projection exposure method for obtaining, based on the acquired information, an amount of change in the imaging characteristics of the pattern image caused by absorption of the exposure beam by the mask. 2. A method of irradiating an exposure beam on a mask,
In a projection exposure apparatus that exposes the substrate to be exposed by projecting an image of a pattern formed on the mask onto the substrate to be exposed via a projection optical system, a detection unit that detects information regarding thermal deformation of the mask A projection exposure apparatus, comprising: correction means for correcting a change in the imaging characteristic of the pattern image due to thermal deformation of the mask based on information detected by the detection means.