JPH1093450A - Transmitter - Google Patents

Abstract

PROBLEM TO BE SOLVED: To reduce the power consumption of a power amplifier part without the fluctuation of the gain and the phase of a device by executing control in such a way that reduction or increase of DC power to supply for an amplifier corresponding to a detecting result at the time of detecting the reduction or increase of an inputted wave detecting output, and so as to control for compensating the gain fluctuating part of the whole amplifier of a high frequency band. SOLUTION: The modulation signal of an IF band generated by a modulator 11 is impressed to a frequency modulator 13 through an amplifier 12. As the output of a local oscillator 15 is also added here through an amplifier 16, the modulation signal of the IF band is converted to a frequency by the modulation signal of the RF band and outputted as a transmission signal through a band pass filter 14, the amplified 51 to 53 of a fixed gain, the amplifier 23 of variable gain and the amplifiers 54 and 55 of fixed gains. On the other hand, a wave detector 21 wave-detects a part of the output of the amplifier 51 of the RF band, generates a voltage corresponding to the peak power of the modulation signal and sends it to control circuits 31 and 32 through an amplifier 22.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a transmitting device used in a multiplex radio system, for example.

A multiplex radio transmission apparatus modulates a carrier in an intermediate frequency band with information to be transmitted (hereinafter, referred to as transmission information) to generate a modulated signal in a high frequency band using a local oscillator and a frequency converter. After frequency conversion to a modulated signal,
The power is amplified to a desired power and output as a transmission signal.

As a modulation method, for example, an amplitude and phase modulation method (for example, 16QAM, 64QAM method) for changing the amplitude component and phase component of a carrier with the above-mentioned transmission information is used. Since the amplitude and phase modulation signal includes information in both the amplitude component and the phase component, an amplifier or the like through which the signal passes does not give extra changes to the amplitude information or the phase information in accordance with the transmitted information. Must be.

On the other hand, as is well known, the gain and the passing phase of a high-frequency amplifier are constant even if the level of the input signal is weak, if the level of the input signal is weak. However, when the level of the input signal exceeds a certain value, a saturation characteristic occurs in which the gain decreases as the level increases. In such a region, when the amplitude / phase modulation signal is amplified, the amplitude information and the phase information change. Information is not accurately transmitted.

[0005] Therefore, there is a need to provide a transmission device in which the power consumption of the power amplification unit is reduced without adversely affecting the modulated signal.

[0006]

2. Description of the Related Art FIG. 17 is a block diagram of a main part of a conventional example. In the figure, the intermediate frequency band (hereinafter, IF
The modulated signal (abbreviated as band) is applied to the frequency converter 13 via the amplifier 12 in the IF band.

The frequency converter 13 has an amplifier 16
Since the output of the local oscillator 15 is also applied, the applied modulation signal of the IF band is frequency-converted to a modulation signal of a high frequency band (hereinafter, abbreviated as RF band), and a desired high frequency band is After the modulated signal is extracted, the power is amplified to a desired power by the fixed gain amplifiers 51 to 55 and output as a transmission signal.

Here, in order to prevent the amplitude information and the phase information in the modulation signal from being adversely affected, for example, the amplifier must amplify the modulation signal within a level range having sufficiently good linearity.

[0009] Therefore, these amplifiers are supplied with a high voltage and a large current from a power supply, maintain class A operation, and perform amplifying operation at a signal level sufficiently lower than a signal level at which a saturation characteristic appears, thereby achieving a high level operation. High quality signal transmission is realized.

[0010]

Here, since the instantaneous power value of the amplitude-modulated signal changes every moment according to the transmitted information, the saturation level of the amplifier is usually considered in consideration of the maximum power value. You have set.

That is, in the conventional device configuration, the DC input power required for the amplifier increases as it approaches the final-stage amplifier.
Along with this, a large power supply and a heat radiator are required, which causes a problem that the power consumption of the device is increased and the device is increased in size.

An object of the present invention is to provide a transmitting apparatus in which the power consumption of a power amplifying unit is reduced without changing the gain and phase of the apparatus.

[0013]

According to a first aspect of the present invention, in a transmitting apparatus, a control unit, a detector for detecting a modulated signal and transmitting a detection output that fluctuates according to amplitude information, and the multi-stage Among the connected high-frequency band amplifiers, a variable gain amplifier or a variable attenuator is provided between predetermined amplifiers.

When the control means detects that the input detection output has decreased or increased from the previous time,
Among the multi-stage connected high-frequency band amplifiers, at least the DC power supplied to the final stage amplifier is reduced according to the detection result,
Alternatively, the gain is increased, and the gain of the variable gain amplifier or the attenuation of the variable attenuator is controlled so that the gain variation of the whole amplifier in the high frequency band is compensated.

According to a second aspect of the present invention, a variable phase shifter is provided in addition to the control means and the detector. The control means controls the DC power supplied to at least the final-stage amplifier among the multi-stage connected high-frequency band amplifiers in response to the fluctuation of the input detection output, and adjusts the phase shift amount of the variable phase shifter. Control
The configuration is such that the phase variation of the whole amplifier in the high frequency band is compensated.

According to a third aspect of the present invention, when the control means detects that the detection output has become equal to or less than a predetermined threshold value or equal to or greater than the threshold value, at least one of the amplifiers in the high frequency band is terminated. The control is performed such that the DC power supplied to the stage amplifier is reduced or increased by a predetermined amount.

According to a fourth aspect of the present invention, a delay circuit for matching the fluctuation state of the amplitude information transmitted from the detector with the control timing of the supplied DC power is provided between the stages of the amplifier in the high frequency band. .

According to a fifth aspect of the present invention, the variable phase shifter and one of the variable gain amplifier and the variable attenuator are provided in the intermediate frequency band. That is, the present invention utilizes the fact that the saturation level of the amplifier may be low when the level of the input signal is low, detects the amplitude information in the modulated signal, and uses the detected amplitude information to determine the peak power at each instant. Is applied to the amplifier, and the amplifier is operated with the minimum necessary DC input power.

Further, a gain change and a phase change generated in the amplifier due to this operation are compensated by a separately provided circuit to realize low power consumption. For this reason, the present invention detects peak power at each instant of the modulation signal, and when the value is small, performs control to reduce the DC power supplied to the amplifier.

For example, in the case of an amplifier using an FET, the positive voltage applied to the drain may be reduced. However, voltage control is usually difficult because a large current flows, and the negative voltage applied to the gate is increased. It is a good idea to suppress the drain current.

This is because the voltage can be easily controlled because almost no current flows through the gate. On the other hand, when the bias voltage is changed, the gain of the amplifier changes, and the passing phase also changes.

Accordingly, in the present invention, the detection voltage of each instantaneous peak power (high-frequency peak power corresponding to amplitude information that changes every moment) of the modulation signal is used to change the bias voltage of the amplifier, By using a signal, a circuit having characteristics opposite to at least one of a gain change and a phase change of the amplifier is provided in the middle of the circuit, so as to eliminate a change in the entire gain and phase.

As a result, it is possible to suppress the power consumption of the power amplifying unit to the minimum without adversely affecting the modulated signal.

[0024]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 is a diagram showing a main part of a first embodiment of the present invention (part 1), and FIG. 2 is a diagram showing a main part of a first embodiment of the present invention (part 2). FIG. 3 is a main part configuration diagram (part 3) of the first embodiment of the present invention.

FIG. 4 is a view showing a main part (part 4) of the first embodiment of the present invention, FIG. 5 is a view showing a main part (part 5) of the first embodiment of the present invention, and FIG. FIG. 7 is a main part configuration diagram (part 6) of the embodiment of the present invention, and FIG. 7 is a main part configuration diagram (part 7) of the first embodiment of the present invention.

FIG. 8 is a diagram showing a main part of the second embodiment of the present invention, and FIG. 9 is an explanatory view of the third embodiment of the present invention. FIG. 7B is a diagram illustrating an example of a change, and FIG. 7B is an explanatory diagram (an example) of a method of setting a bias voltage based on a magnitude relationship between a threshold voltage Vs and a detection voltage.

FIG. 10 is a block diagram of a main part of a fourth embodiment of the present invention, FIG. 11 is a block diagram (part 1) of a main part of a fifth embodiment of the present invention, and FIG. FIG. 13 is a main part configuration diagram (part 1) of a control unit in the first to fifth embodiments of the present invention (part 1), and (a) is a first control unit. FIG. 4B is a main part configuration diagram of the second control unit.

FIGS. 14A and 14B are explanatory diagrams (part 2) of the control unit in the first to fifth embodiments of the present invention. FIG. 14A is a diagram showing a main part of the third control unit, and FIG. 4 is a main part configuration diagram of a control unit of FIG. Fig. 15
6 is an explanatory diagram of a fifth control unit in FIG. 6, (a) is a configuration diagram of a main unit, (b) is a signal point arrangement diagram of a 16QAM system, and FIG. 16 is a diagram of a main unit of a sixth control unit in FIG. It is a block diagram.

Hereinafter, FIGS. 1 to 16 will be described. Note that the same reference numerals throughout all the drawings denote the same objects. Also, the parts described in detail above will be described briefly, and the parts of the present invention will be described in detail. Further, the amplifiers 51 to 55 and the variable gain amplifier 23 are RF band amplifiers, and the amplifier 12 is an IF band amplifier.

In FIG. 1, the modulated signal in the IF band generated by the modulator 11 is transmitted through an amplifier 12 to a frequency converter 13.
Is applied. Here, a local oscillator 15 is connected via an amplifier 16.
The output of the IF band is also added, so that the IF band modulated signal is frequency-converted into the RF band modulated signal, and the band pass filter 14, the fixed gain amplifiers 51 to 53, the variable gain amplifier 23, and the fixed gain amplifier 54, Output as transmission signal through 55.

On the other hand, the detector 21 detects a part of the output of the amplifier 51 in the RF band, generates a voltage corresponding to the peak power of the modulated signal, and sends it to the amplifier 22. Therefore, the amplifier 22 amplifies the output of the detector 21 to an appropriate level, and controls the gate bias voltage of the final-stage amplifier 55 by a first control circuit 31.
And a second control unit 32 for controlling the gain of the variable gain amplifier 23.
To send to.

The operation of the first and second control units will be described below. First, the first control unit (CONT ₁ ) 31 includes a voltage amplifier 311 and a voltage adder 312 as shown in FIG.

The voltage amplifier 311 further amplifies the voltage Vin transmitted from the amplifier 22, but here, the bias voltage of the FET (not shown) constituting the final stage amplifier 55 in FIG. 1 is optimized. The gain of the voltage amplifier 311 is set as follows (to optimize the balance between low power consumption and gain change or passing phase change). That is, the output voltage sent by the amplifier 22 in FIG. 1 is the same as the voltage Vin (corresponding to the amplitude information) input to the voltage amplifier 311 in FIG. 13 (a), and this voltage corresponds to the peak power of the modulation signal. And constantly changing over time.

Therefore, for such a voltage Vin, the determination of the bias voltage of the final-stage amplifier 55 that satisfies the above-mentioned optimum condition and the gain of the voltage amplifier 311 for applying the determined bias voltage to the final-stage amplifier 55 are performed. For example, it is obtained in advance by an experiment or simulation.

Then, a gain setting table indicating the relationship between the input voltage Vin and the gain of the voltage amplifier 311 obtained in advance is created, and this is stored in advance inside the voltage amplifier 311, for example.

Accordingly, when the voltage Vin is applied, the voltage amplifier 311 sets the corresponding gain using the gain setting table, amplifies the applied voltage, and amplifies the output voltage to the voltage added by the DC negative voltage V. To the container 312.

The voltage adder 312 applies a voltage obtained by adding the output of the voltage amplifier 311 and the negative DC voltage V as a bias voltage of the final amplifier 55. When the peak power of the modulation signal is small, the voltage adder 312 constitutes the final amplifier. The operation of the first control unit is set so that the DC negative voltage applied to the gate of the FET to be increased increases.

Thus, the FET constituting the final stage amplifier 55
, The drain current is kept small, and the power consumption is reduced. In other words, the output voltage of the voltage amplifier 311 is a voltage that always changes with time in accordance with the peak power of the modulation signal, and this voltage is superimposed on the DC negative voltage V to form the final stage amplifier 55. By applying a DC gate bias voltage to the gate, the drain current of this FET was controlled.

The voltage amplifier and the voltage adder can be realized by an operational amplifier. Here, the FET constituting the final stage amplifier 55
The variable gain amplifier 23 is provided, for example, between the amplifier 53 and the amplifier 54 and compensated by the second control unit 32 in order to compensate for the gain change occurring in the entire RF band amplifier circuit due to the change of the gate bias voltage of The gain of the gain amplifier 23 is controlled. That is, the second control unit is composed of a voltage amplifier 321 and a voltage adder 322 as shown in FIG.
Is amplified by the voltage amplifier 321. Here, the gain change of the variable gain amplifier 23 is set so as to have an inverse characteristic to the gain change of the final-stage amplifier 55 (this is the optimum condition).

To perform the above setting, various input voltages Vin
A gain setting table showing the correspondence between the above and the gain of the voltage amplifier 321 for satisfying the above-mentioned optimum condition is created in advance and stored in the voltage amplifier 321.

The creation of the table uses, for example, a simulation or the like in the same manner as described above. Therefore, the voltage amplifier 321 sets the corresponding gain using the above gain setting table when the input voltage Vin is applied,
The input voltage Vin is amplified and sent to the voltage adder 322.

The voltage adder 322 applies a voltage obtained by superimposing the DC positive voltage V on the output voltage of the voltage amplifier 321 as an output voltage Vout to a gain control terminal (not shown) of the variable gain amplifier 23 of FIG.

Here, various configurations of the variable gain amplifier 23 are conceivable. For example, in the case of a circuit using a dual gate FET, a voltage that changes momentarily according to the peak power of the modulation signal is set to the first voltage. The output voltage Vout from the voltage adder 322 may be supplied to the second gate.

The voltage amplifier 321 and the voltage adder 322 can be realized by an operational amplifier. That is, when the output negative voltage of the first control unit 31 is large (when the DC negative voltage V of the gate bias of the FET constituting the final-stage amplifier is large and the gain is low), the second control unit is The variable gain amplifier 23 is operated so as to increase the gain.

Thus, even if the power consumption of the final-stage amplifier 55 is controlled by the peak power of the modulation signal, the gain fluctuation of the entire RF band amplifier is compensated, and the modulation signal is not changed unnecessarily. Yes.

FIG. 2 is a circuit diagram showing the amplifier 51 shown in FIG.
1 to 55 and the periphery thereof, in which a variable attenuator 24 using a PIN diode is used instead of the variable gain amplifier in FIG. Hereinafter, the operation of FIG. 2 will be described.

The signal (voltage corresponding to the peak power of the modulated signal) detected by the detector 21 in the figure is usually a very small voltage, and therefore, is amplified by the voltage amplifier 22 and branched into two, one of which is shown in FIG. 13 (a) and the other is sent to the first control unit 31 shown in FIG. 13 (a), but the latter operation is omitted since it has been described in detail above, and the former operation is omitted. Will be described.

In FIG. 14 (a), the input voltage Vin is amplified by the voltage amplifier 331. The gain of the voltage amplifier 331 is determined by the attenuation characteristic of the variable attenuator 24 in FIG. Set to an optimum value to cancel the change in FET gain
(Set in the same manner as described above using the table built in the voltage amplifier 331).

The input voltage amplified with the optimum gain
Vin is applied to a voltage adder 332, and the output Vo of this amplifier is
ut is an attenuation control terminal (not shown) of the variable attenuator 24 of FIG.
Connected to.

At this time, the voltage adder 332 superimposes a time-varying voltage corresponding to the peak power of the modulated wave on the appropriate DC positive voltage V, and supplies it to the variable attenuator 24 in FIG. When the gate bias voltage of the FET constituting the final-stage amplifier 55 increases in the negative direction (when the gain decreases), the polarity of the voltage is set so that the passing loss of the variable attenuator 24 decreases.

Note that the DC positive voltage V applied to the voltage adder 332 is set to a certain value within the level change range of the final-stage amplifier 55. That is, a voltage corresponding to the peak power of the modulation signal output from the amplifier 22 in FIG. 2 is applied to the third control unit 33, and the DC voltage flowing through the PIN diode according to the peak power of the modulation signal in the third control unit is controlled. By controlling the current, it is possible to compensate for the gain fluctuation of the entire RF band amplifier.

FIG. 3 shows the amplifiers 51 to 55 and their peripheral parts, as in FIG. FIG. 3 shows a final stage amplifier 55 to further increase the effect of reducing power consumption.
The power consumption is the second largest, and the power consumption of the amplifier 54 installed before the final-stage amplifier is also controlled according to the peak power of the modulation signal.

That is, in addition to the first control section 31, a 1a-th control section 31a is provided, and an independently controlled gate bias voltage is applied to the FETs constituting the final amplifier 55 and the preceding amplifier 54, respectively. Each of the stages is configured to reduce power consumption. Note that the first and first control units have the same configuration.

The change in the gain of the entire RF band amplifier is compensated by the variable gain amplifier 23 and the second control unit.
However, if this causes a change in the passing phase,
A means for phase compensation by a variable phase shifter shown in FIG. 8 to be described later can be used together.

In FIG. 4, as shown in FIG.
The configuration is such that both the gate bias voltage and the drain bias voltage of the FET constituting the 55 are controlled. That is, the amplifier
Voltage corresponding to the peak power of the modulation signal output from 22
Vin is transmitted to the first controller 31b in addition to the first controller 31.
In addition to this, the DC positive voltage V supplied to the drain of the FET constituting the final stage amplifier 55 is also applied to the control unit 31b.

Therefore, the positive bias voltage supplied to the drain of the FET is controlled by the 1b control section 31b so as to become lower when the peak power of the modulation signal is small. Accordingly, when the peak power of the modulation signal is small, the drain bias voltage is reduced, and the drain current is suppressed to a small value by controlling the gate bias voltage, so that a greater power consumption effect can be obtained.

In FIG. 5, as shown in FIG.
Is taken out from the IF band circuit. That is, by detecting the modulation signal in the IF band, a control signal corresponding to the peak power is generated, thereby controlling the gate bias voltage of the final-stage amplifier 55. Further, realizing the detection circuit in the IF band has an advantage that an inexpensive detection device can be used.

The use of the first control unit 31 for controlling the gate voltage of the final stage amplifier 55 and the use of the second control unit 32 for controlling the gain of the variable gain control amplifier 23 are shown in FIG. Same as case.

In FIG. 6, as shown in the figure, a signal for controlling the bias voltage of the FET constituting the variable gain amplifier 23 and the final stage amplifier 55 is directly taken from the modulator 11. The modulator 11 has information relating to the amplitude component as a digital signal, and transmits the signal as a control signal to the amplifier 22 via a fifth control unit 35 having a D / A conversion function.

FIG. 15 is an explanatory diagram of the fifth control unit. In FIG. 15A, the carrier of a multilevel QAM signal is usually modulated by a digital modulator. CONT5 inputs a digital signal, which is a control signal of the modulator, to the D / A converter 351 and obtains an analog voltage corresponding to the constellation of the modulated wave.

That is, the output voltage increases as the distance from the origin on the coordinates of the constellation shown in FIG. 15 (b) increases. After the output voltage is amplified by the voltage amplifier 352, the first control unit 31 for controlling the bias of the FET constituting the final stage amplifier 55 and the variable gain amplifier via the amplifier 22 in FIG.
23 is supplied to a second control unit 32 for controlling the gain.

In this configuration, since the bias control signal can be obtained without using the detector, there is an advantage that it is possible to avoid the problem of variations in analog characteristics of the detector.

Here, in the configuration of the second control unit described above, when the operating temperature fluctuates, the characteristics of the variable gain amplifier 23 for compensating the gain fluctuation fluctuate, and a desired compensation amount may not be obtained. .

Therefore, as shown in FIG.
A sixth control unit 36 for temperature compensation is provided in the second control unit 32 for controlling the gain of the first embodiment, so that appropriate gain compensation can be obtained under any temperature conditions.

FIG. 16 shows the configuration of the sixth control unit. As shown in the figure, the voltage amplification of the voltage amplifier 361 changes in response to a temperature change. Therefore, if this amplifier is realized by, for example, an operational amplifier, a temperature sensing element 362 such as a thermistor is connected to a part of a resistor that determines a voltage gain,
A gain change due to temperature change is provided, and operation is performed so as to cancel the temperature dependency of the gain change of the FET constituting the final stage amplifier.

FIG. 8 also shows RF band amplifiers 51 to 55 and their peripheral parts, similarly to FIG. When the gate bias voltage of the FET constituting the final stage amplifier 55 in FIG. 8 is changed, the passing phase of a signal passing through the FET may change (because the delay phase changes when entering the non-linear part of the FET). Is).

In the case of the amplitude and phase modulation method, an unnecessary change in the phase component causes an error, so that the change must be suppressed. In this embodiment, the variable phase shifter 25 is provided in the middle of the amplifiers 51 to 55.

That is, a signal corresponding to the peak power of the modulation signal output from the amplifier 22 is added to the fourth control unit 34, and the amount of phase shift through the variable phase shifter 25 is controlled according to the peak power of the modulation signal. Then, the change in the passing phase is set to have the opposite characteristic to the change in the passing phase of the final-stage amplifier 55.

Here, FIG. 14 (b) shows a configuration diagram of the fourth control unit, and the operation of this control unit will be described with reference to FIG. In the figure, the input voltage Vin is
In this case, the gain is set to an optimum value such that the phase shift characteristic of the variable phase shifter 25 in FIG. 8 cancels the change in the passing phase of the FET constituting the final stage amplifier 55.

This setting is performed by the FET constituting the final-stage amplifier 55.
, The amount of change in the output level and the phase characteristic is measured in advance. Then, the voltage amplifier shown in FIG.
341 gain control.

The control voltage amplified to the optimum value is a voltage adder
The output Vout of the variable phase shifter shown in FIG.
25 phase shift control terminals (not shown). The variable phase shifter 25 usually uses a variable capacitance mode.

In this case, the voltage adder 342 in FIG. 14 superimposes an appropriate DC positive voltage V and a voltage that changes every moment according to the peak power of the modulation signal and supplies the superposed voltage to the variable capacitance diode. The polarity of the voltage is set such that the change in the passing phase of the FET constituting the final stage amplifier 55 is canceled out.

That is, a voltage corresponding to the peak power of the modulation signal output from the amplifier 22 is applied to the fourth control unit 34,
The passing phase amount of the variable phase shifter 25 is controlled in accordance with the peak power of the modulation signal, and the passing phase change is set to have a characteristic opposite to the passing phase change of the final stage amplifier 55.

As a result, even if the power consumption of the final stage amplifier 55 is controlled by the peak power of the modulation signal, the phase fluctuation of the whole RF band amplifier is compensated, and the modulation signal is not changed unnecessarily. I'm done.

Here, in the embodiments described above, the bias voltage of the final stage amplifier is controlled at any time in accordance with the peak power of the modulation signal that changes every moment. FIG. 9 shows a case where power consumption is reduced by simple bias control. FIG. 9A shows an example of the magnitude of the detection voltage output from the detector 21 on the vertical axis with respect to the time on the horizontal axis.

A detection voltage corresponding to the modulation of the amplitude component can be obtained. Here, the threshold voltage Vs is set, and the bias voltage of the final-stage amplifier 55 in FIG. Things.

That is, as shown in FIGS. 9A and 9B, when the detection voltage is higher than the threshold voltage Vs, the gate bias negative voltage of the final stage amplifier is reduced to V ₂ and the drain current is reduced. many were (in FIG. 9, 'reference), if the detected voltage is smaller than the threshold voltage Vs value conversely, suppress the drain current of the gate bias negative voltage final amplifier by increasing the V ₁ (FIG. 9 ').

The reduction of power consumption can also be realized by such a binary control method (simplification of control). In order to implement this, a comparator may be provided in the control unit, and 'or' may be output in accordance with the comparison result.

In FIG. 10, as shown in the figure, a delay circuit 24 for matching the timing of the peak power of the modulation signal with the timing of the bias control of the variable gain amplifier 23 is provided with a delay circuit 24 after the input of the detector 21. And at a stage preceding the final-stage amplifier 55 (between the amplifiers 52 and 53 in this embodiment).

By appropriately setting the delay amount,
The operation can be performed so that the gate bias of the FET constituting the final stage amplifier is reduced without the timing being shifted when the instantaneous power of the modulation signal is increased.

In FIG. 11, as shown in the figure, the amplitude compensating means 32 and 23a and the phase compensating means 34 and 23 shown in FIGS.
25a is realized by an IF band circuit. These circuits
Implementing in the IF band has the advantage that inexpensive devices can be used.

In FIG. 12, as shown in FIG.
A variable phase shifter 25b for compensating a phase change caused by the bias control of 55 is provided in the local oscillation circuit. Then, the amount of phase shift of the variable phase shifter is determined by the fourth control unit 34 described with reference to FIG.
If the phase of the local oscillation signal is changed under the control of, the phase of the RF band signal appearing in the output of the frequency converter 13 also changes.

That is, while the modulation signal has a certain bandwidth, the local oscillation signal is a single carrier signal, so that the phase can be changed without concern for amplitude deviation or phase deviation. There is.

Further, this temperature compensation can be applied to the control of the variable phase shifter and the control of the voltage supplied to the gate of the FET, and a more appropriate operation can be obtained in a wide temperature range.

[0085]

As described in detail above, according to the present invention, the power consumption of the amplifier circuit constituting the transmitting apparatus can be minimized without adversely affecting the quality of the amplitude-phase modulated signal. In addition, the size of the radiator and the size of the power supply can be reduced by reducing the amount of heat generated, and the size and the price of the device can be reduced.

That is, there is an effect that it is possible to provide a transmitting apparatus in which the power consumption of the power amplifying unit is reduced without changing the gain and phase of the apparatus.

[Brief description of the drawings]

FIG. 1 is a configuration diagram of a main part of an embodiment of the first invention (part 1);
It is.

FIG. 2 is a configuration diagram of a main part of an embodiment of the first invention (part 2);
It is.

FIG. 3 is a configuration diagram of main parts of an embodiment of the first invention (part 3);
It is.

FIG. 4 is a configuration diagram of a main part of the first embodiment of the present invention (part 4);
It is.

FIG. 5 is a configuration diagram of a main part of the first embodiment of the present invention (part 5);
It is.

FIG. 6 is an explanatory view (No. 6) of the first embodiment of the present invention;

FIG. 7 is a configuration diagram (part 7) of a main part of the first embodiment of the present invention;
It is.

FIG. 8 is a main part configuration diagram of a second embodiment of the present invention.

FIGS. 9A and 9B are explanatory diagrams of the third embodiment of the present invention, in which FIG. 9A shows an example of a change in a threshold voltage with respect to time: a detection voltage, and FIG. FIG. 9 is an explanatory diagram (an example) of a method of setting a bias voltage from the magnitude relation of FIG.

FIG. 10 is a main part configuration diagram of a fourth embodiment of the present invention.

FIG. 11 is a configuration diagram (part 1) of a main part of a fifth embodiment of the present invention;

FIG. 12 is a configuration diagram (part 2) of a main part of a fifth embodiment of the present invention;

13A and 13B are main part configuration diagrams of a control unit in the first to fifth embodiments of the present invention (part 1), wherein FIG. 13A is a main part configuration diagram of a first control unit, and FIG. FIG. 4 is a configuration diagram of a main part of a second control unit.

14A and 14B are main part configuration diagrams of a control unit in the first to fifth embodiments of the present invention (part 2), wherein FIG. 14A is a main part configuration diagram of a third control unit, and FIG. 4 is a main part configuration diagram of a control unit of FIG.

15A and 15B are explanatory diagrams of a fifth control unit in FIG. 6, wherein FIG. 15A is a configuration diagram of a main part, and FIG. 15B is a signal point arrangement diagram of the 16QAM system.

FIG. 16 is a main part configuration diagram of a sixth control unit in FIG. 7;

FIG. 17 is a configuration diagram of a main part of a conventional example.

[Explanation of symbols]

 11 modulator 13 frequency converter 14 band-pass filter 15 local oscillator 21 detector 23 variable gain amplifier 24 variable attenuator 25 variable phase shifter 31 first control unit 32 second control unit 33 third control unit 34 Fourth control unit 35 Fifth control unit 36 Sixth control unit 51 to 55 RF band amplifier 311, 321, 331, 341, 352, 361 Voltage amplifier 312, 322, 332, 342 Voltage adder 362 Temperature-sensitive Element 351 D / A converter

Claims (5)

[Claims] An amplitude-modulated or amplitude / phase-modulated intermediate frequency band modulated signal is frequency-converted to a high frequency band modulated signal, and further amplified and transmitted to a desired transmission power by a multistage connected high frequency band amplifier. A transmission device that detects a modulation signal, and outputs a detection output that fluctuates in accordance with amplitude information; and a predetermined amplifier among the multistage-connected high-frequency band amplifiers. A variable gain amplifier or a variable attenuator, wherein the control means detects at least the last-stage amplifier among the multistage-connected high-frequency band amplifiers when detecting that the input detection output has decreased or increased from the previous time. The DC power supplied to the amplifier is decreased or increased in accordance with the detection result, and the gain of the variable gain amplifier or the amount of attenuation of the variable attenuator is controlled so that the entire amplifier in the high frequency band is controlled. Transmitting device, wherein a gain fluctuation was configured to control so as to compensate for. 2. The transmitting apparatus according to claim 1, further comprising: a variable phase shifter provided in addition to the control means and the detector, wherein the control means responds to a change in the input detection output by connecting multiple stages of high-frequency signals. Of the amplifiers in the band, the DC power supplied to at least the final stage amplifier is controlled, and the phase shift amount of the variable phase shifter is controlled to compensate for the phase variation of the entire amplifier in the high frequency band. A transmission device characterized by the above-mentioned. 3. When the detection means detects that the detection output has become equal to or less than a preset threshold value or equal to or greater than the threshold value, the control means supplies the signal to at least the final-stage amplifier of the high-frequency band amplifiers. 2. The transmitting apparatus according to claim 1, wherein control is performed to reduce or increase the DC power to be performed by a predetermined amount. 4. A delay circuit for matching a fluctuation state of amplitude information transmitted by the detector with a control timing of supplied DC power is provided between stages of an amplifier in a high frequency band. 4. The transmission device according to claim 1, 2, 3, or 4, wherein 5. The transmitting apparatus according to claim 1, wherein said variable phase shifter and one of a variable gain amplifier and a variable attenuator are provided in an intermediate frequency band. .