JPH1093067A - Amplifying-type solid-state image-sensing device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To fine the size of pixels by owning active regions for forming sources, drains, and gates in unit pixels together between adjoining pixels, and making connections with the amplifying gates of amplifying transistors. SOLUTION: Active regions 1 are separated by element-separating regions 2, and are owned together by pixels adjoining vertically. All the active regions 1 have the same structure, and are composed of photodiodes 3 for performing photoelectric conversion and accumulating signal charges simultaneously, resetting gates 4 for resetting the potentials of the photodiodes 3, drains 5 used together as those for resetting the potentials of the photodiodes 3, as well as those of amplifying transistors, amplifying gates 6 for modulating the amplifying tansistors by the potentials of adjoining photodiodes, and sources 7 for outputting signal currents from the amplifying transistors. Consequently, it becomes possible to greatly fine the structure of the pixels.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a pixel configuration of an amplification type solid-state imaging device, and more particularly to a pixel configuration capable of constructing a fine pixel structure.

[0002]

2. Description of the Related Art A solid-state imaging device in which a signal charge generated by photoelectric conversion modulates a potential of a signal charge accumulating portion and an amplifying transistor inside the pixel is modulated by the potential to provide an amplifying function inside the pixel is provided. It is called an amplification type solid-state imaging device. This amplification type solid-state imaging device is expected as a solid-state imaging device suitable for reducing the pixel size by increasing the number of pixels and reducing the image size.

As shown in FIG. 15, a basic pixel in an amplification type solid-state imaging device is a photodiode 101 for photoelectric conversion and a reset transistor 102 for initializing the voltage of the photodiode 101. When,
It includes a transistor 103 for amplification, a transistor 104 for line selection or capacitive coupling, and a wiring 105 for connecting the photodiode 101 and the gate of the amplification transistor 103. Incidentally, reference numeral 106 denotes an active region, and 107 denotes an element isolation region.

Further, when the photoelectrically converted signal charges are temporarily stored, a storage diode is provided in a region different from the photodiode, and a transfer gate is provided between the photodiode and the storage diode.

[0005]

In the conventional pixel configuration of the amplification type solid-state imaging device, the active region related to photoelectric conversion,
That is, an active region including a photodiode, a transfer gate, a storage diode, and a reset transistor and an active region including an amplification transistor have been independently arranged. However, in such a configuration, two pixels are provided inside one pixel.
Since there are a plurality of active regions, a reduction in the effective area due to the element isolation region has been a problem.

Therefore, an arrangement was considered in which the drain for resetting the active region related to photoelectric conversion and the drain of the active region constituting the amplifying transistor are shared. However, even in the method in which one active region is provided in one pixel, miniaturization of the pixel size is difficult due to the existence of the gate wiring length in the pixel by wiring the storage diode and the amplification gate. .

The present invention has been made in view of the above situation, and has as its object to provide an amplification type solid-state imaging device capable of realizing a finer pixel size without reducing the effective area due to the element isolation region. And

[0008]

That is, the present invention provides a photoelectric conversion means for performing photoelectric conversion, a storage means for storing signal charges by the photoelectric conversion, a reset means for resetting the stored signal charges, and a storage means for storing the stored signal charges. In an amplification type solid-state imaging device including an amplification transistor modulated by a signal charge and reading means for reading a signal current from the amplification transistor, a plurality of active regions forming a source, a drain and a gate in a unit pixel are provided. The active region is shared between adjacent pixels in a first direction and a second direction opposite to the first direction, and an amplification gate of the amplification transistor is connected to the first and second directions. And an active region connected to an active region adjacent in a third direction perpendicular to the third direction and a fourth direction opposite to the third direction, the photodiode including a photodiode as a photoelectric conversion unit. Range is characterized by being an active region including the amplification transistor of the pixel adjacent to the one of the first and second directions.

Further, the present invention provides a photoelectric conversion means for performing photoelectric conversion, a storage means for storing the signal charge by the photoelectric conversion, a reset means for resetting the stored signal charge, and modulation by the stored signal charge. In an amplification type solid-state imaging device including an amplification transistor and reading means for reading a signal current from the amplification transistor,
A plurality of transistor structures having a source, a drain, and a gate have a plurality of active regions arranged in series in a first direction and a second direction opposite to the first direction, wherein the active regions are in a checkered pattern. It is characterized by being arranged in.

Further, according to the present invention, a photoelectric conversion means for performing photoelectric conversion, a storage means for storing the signal charge by the photoelectric conversion, a reset means for resetting the stored signal charge, and modulation by the stored signal charge In an amplification type solid-state imaging device including an amplification transistor and reading means for reading a signal current from the amplification transistor,
A plurality of transistor structures having a source, a drain, and a gate are arranged in series in a first direction and a second direction opposite to the first direction, and mutually include a plurality of transistor structures orthogonal to the first and second directions. The third direction and the fourth direction opposite to the third direction.
Having a plurality of different first and second active regions arranged adjacent to each other in a direction, and commonly used between pixels adjacent to the first and second directions and sharing the active region. Characterized by having a gate that operates.

According to the present invention, by providing a gate line in a pixel for connecting a storage diode and an amplification gate between adjacent active regions, it is possible to prevent the gate line in a pixel from being excessively enlarged in a vertical direction. Become.

Further, by optimizing the arrangement of the amplification gate, the common gate and the common wiring, the address line and the like constituting the amplification type solid-state imaging device according to each purpose, a cell which can be manufactured in a short process, It is possible to obtain a cell having a fine structure.

A photodiode inside the active region;
By providing rules that optimize the arrangement of the storage diode, reset drain, and signal output unit, a signal wiring structure and a drain wiring structure suitable for a fine structure are provided.

In the amplification type solid-state imaging device according to the present invention, a plurality of active regions are provided inside the pixel, and the active region is shared between vertically adjacent pixels, and there is no active region unique to the pixel. The amplifying transistors are connected to active regions adjacent on the left and right.

[0015]

Embodiments of the present invention will be described below with reference to the drawings. FIGS. 1A and 1B show a cell structure of a pixel portion of an amplification type solid-state imaging device according to a first embodiment of the present invention, wherein FIG. 1A is a plan pattern diagram, and FIG. The configuration of eight pixels in four rows and two columns is shown.

As shown in FIG. 1, an active region 1 is separated by an element isolation region 2 and two pixels are present in each pixel. Each active region is shared between two vertically adjacent pixels. I have. All of the active regions 1 have the same structure. In the figure, from the top, a photodiode 3 for accumulating signal charges at the same time as performing photoelectric conversion, and a reset gate for resetting the potential of the photodiode 3 4, a drain 5 which also serves as a drain for resetting the potential of the photodiode 3 and a drain of the amplifying transistor, an amplifying gate 6 for modulating the amplifying transistor with an adjacent photodiode potential, and for outputting a signal current from the amplifying transistor. The source 7 is composed of five types of components.

In the first embodiment, an address capacitor 8 and an address line 9 connected to an amplification gate 6 and a photodiode 3 for selecting a pixel.
Capacitive coupling is used. Then, a line capacitively coupled to the address line 9 to which the address pulse is applied is selected.

As an example for realizing the gate structure of the embodiment, the amplification gate 6 and the reset gate 4 are formed of a first polysilicon layer, and the address line 9 is formed of a second polysilicon layer.
And finally, the address capacitor 8 may be formed of the third polysilicon layer.

In FIG. 1B, reference numeral 10 denotes a drain line, and reference numeral 11 denotes a signal line. Next, an example of the operation of the first embodiment will be described with reference to the timing chart of FIG. 2 using the pixel in the third row and first column as an example.

First, after the reset gate 4 is turned on to reset the potential of the photodiode 3, the reset gate 4 is turned off. The signal charge photoelectrically converted in the photodiode 3 during a certain period for imaging modulates the potential of the photodiode 3. And
In order to read out the signal charges, an address voltage is applied to an address line 9 which is capacitively coupled to an address capacitor 8 connected to the photodiode 3 and the amplification gate 6. Amplification gate 6 selected by this address pulse
Accordingly, the amplification transistor is modulated by the potential of the photodiode 3, and the output signal from the source 7 is modulated, so that an output signal corresponding to the signal charge can be obtained. If necessary, for example for noise cancellation operation,
After the potential of the photodiode 3 is reset again, the output signal of the amplification transistor in the reset state can be obtained from the source 7.

In the first embodiment, two active regions 1 are arranged in one pixel, and these active regions 1 are shared by upper and lower two pixels. By setting the active region for performing the photoelectric conversion and reset operation inside the pixel and the active region constituting the amplifying transistor to be different active regions, the amplification gate 6 can be formed with a very short wiring length in the horizontal direction inside the pixel. It can be connected to the diode 3.

For this reason, conventionally, the amplification gate and the reset gate, which are formed in a different layer from the amplification gate or require wiring in a different layer from the amplification gate, can be formed by one layer, and the pixel structure can be reduced. Can be greatly miniaturized.

In this embodiment, the photodiode 3 and the amplification gate 6 are reversed left and right in the pixel for each line, and the minimum unit constituting the pixel area is two rows and one line.
Become a column. However, as a result, the arrangement of the photodiodes 3 is a so-called pixel shift arrangement in which the arrangement of the photodiodes 3 is shifted by 1/2 pixel for each line in the horizontal direction.

Therefore, the number of sampling points in the horizontal direction is doubled, and the horizontal resolution can be improved. Therefore, according to the embodiment, while configuring the fine pixel,
Further, the resolution can be greatly improved.

Further, although not shown in FIG. 1, in the first embodiment, when the drain line 10 and the signal line 11 are arranged, the drain line 10 connected to the drain 5 is linear in the horizontal direction. And the signal line 11 connected to the source 7 is a vertical wiring that is folded back for each pixel.

The amplification gate 6 shown in FIG. 1 is always located below the signal line 11. Therefore,
Since all the amplification gates 6 are equally affected by the capacitive coupling to the signal line 11, the characteristics of the amplification transistors are less likely to vary, so that noise can be significantly suppressed. .

In this embodiment, the reset gate 4, which is a common gate commonly used in the horizontal direction, and its wiring are arranged linearly. this is,
In the adjacent active region, a gate or an element isolation region 2 is always provided next to the gate, which is obtained as a result of taking into consideration that the active region 1 shared by two vertical pixels is a neighboring active region. By arranging them by one pixel in the vertical direction between them, it can be easily realized.

According to such a common gate and common wiring arrangement, the distance to a gate voltage application circuit (not shown) existing outside the pixel region is minimized, and the wiring resistance and the wiring capacitance thereof are minimized. Thus, the delay characteristics of the wiring can be greatly improved.

Further, in the first embodiment, the address line 9 is also formed linearly in the horizontal direction similarly to the reset gate 4, so that exactly the same effect can be obtained. In the embodiment, in the pixel area,
The address line 9 has a structure laminated on the reset gate 4. With this structure, the address line 9 is completely unaffected by a step in the lower layer structure, for example, a step at the end of the reset gate 4 or a step at the end of the amplification gate 6, which may cause a problem in device manufacturing. There is no problem of step breakage at the shape portion or remaining of etching, and extremely stable production is possible.

Next, a second embodiment of the present invention will be described. 3A and 3B are diagrams illustrating a cell structure of a pixel region of an amplification type solid-state imaging device according to a second embodiment of the present invention, wherein FIG. 3A is a plan pattern diagram, FIG. 3B is a circuit diagram,
It has an 8-pixel configuration with 4 rows and 2 columns.

In the second embodiment, the arrangement of the active region 1, the components in the active region 1, the arrangement of the reset gate 4 inside the pixel, and the arrangement of the address line 9 for line selection are as described above. As in the first embodiment,
Only the arrangement of the amplification gate 6 is different.

In FIG. 3, the amplification gate 6 is always connected to the photodiode 3 in the active region 1 adjacent to the left of the gate. Therefore, in the second embodiment, the shape of the amplifying gate 6, which has been inverted for each line in the first embodiment, is the same in all pixels and in the same direction. Are located. Therefore, the minimum unit constituting the pixel region has a one-pixel structure with one row and one column. A pixel area is formed by displacing the minimum unit in the horizontal direction by 1/2 pixel for each line.

In the second embodiment, the connection from the amplification gate 6 to the photodiode 3 is made in the active region adjacent to the left, but may be connected to the active region adjacent to the right. Of course it is possible. In this case, FIG.
The structures of (a) and (b) can be realized by left and right inverted structures, respectively.

The second embodiment has the same basic structure as that of the above-described first embodiment, and therefore the description of the operation is omitted. However, similar to the first embodiment, the conventional structure is similar to that of the first embodiment. Not only can a fine pixel that cannot be constructed be constructed, but also its manufacturing process can be realized by an extremely stable method, the horizontal resolution can be greatly improved, and the reset gate 4 and address line 9 The delay characteristics can be greatly improved.

Further, in the second embodiment, since the amplification gates 6 in all the pixels have the same shape and are arranged in the same direction, the processed shape in the manufacturing process is disturbed, for example, The uniformity of the characteristics of the amplification gates 6 can be remarkably improved when all the amplification gates 6 receive the influence of misalignment with the active region 1 in the step of forming the amplification gates 6 by photolithography. Therefore, it is possible to uniformly manufacture the characteristics of the amplifying transistor that greatly changes depending on the shape of the amplifying gate, and it is possible to obtain an amplifying solid-state imaging device with low noise.

Next, a third embodiment of the present invention will be described. FIG. 4 is a diagram illustrating a configuration of a pixel unit of an amplification type solid-state imaging device according to a third embodiment of the present invention.
FIG. 3A is a plan view, FIG. 3B is a circuit diagram, and FIG.
Shows an 8-row element configuration of 4 rows and 2 columns.

In the third embodiment, the method of arranging the active region 1, the method of arranging the reset gate 4, the method of arranging the amplification gate 6, the method of arranging the address lines 9 and the address capacitors 8, and the like are described in the first embodiment. This is the same as the embodiment. The minimum unit constituting the pixel area is 2
It has a two-pixel configuration with one row and one column, and can form a pixel having an extremely fine structure with high resolution, low noise, and excellent delay characteristics as in the first embodiment by a stable manufacturing process.

Further, in this embodiment, the number of components inside the active region 1 is increased by one gate and one diode as compared with the above-described first and second embodiments, so that a finer pixel having a higher function can be obtained. It is feasible.

The components of the active region 1 shown in FIG.
It is the same in all the active regions, and is composed of seven components of a storage diode 12, a transfer gate 13, a photodiode 3, a reset gate 4, a drain 5, an amplification gate 6, and a source 7 in order from the top in the figure. It is configured.

The difference between the third embodiment and the first and second embodiments described above is the presence of the storage diode 12 and the transfer gate 13. The function of the device has been greatly improved.

Hereinafter, the operation and the operation will be described with reference to the timing chart of FIG. For simplicity, in the following description, description of line selection by an address line will be omitted, and unless otherwise specified, description will be made only of pixels of a selected line.

First, the transfer gate 13 and the reset gate 4
Is turned on, the photodiode 3, the storage diode 1
2 is reset. Next, the transfer gate 13 and the reset gate 4 are turned off, and the photoelectric conversion is performed in the photodiode 3 during the accumulation period for imaging to modulate the potential of the photodiode 3.

When the transfer gate 13 is turned on after the end of the storage period, the potential of the storage diode 12 changes according to the modulated potential of the photodiode 3. At the same time, the potential of the amplification gate 6 connected to the storage diode 12 also changes, and a modulated signal current is output from the source 7 according to the change in the amplification gate potential.

Further, if necessary, the storage die 1
2 can be reset to obtain a signal current corresponding to the dark level. In the above operation, the reset before the start of accumulation and the photodiode 3 after the end of the accumulation period
Can be simultaneously transferred to all the pixels, and the reading of the signal current from the amplification transistor can be sequentially performed thereafter.

Therefore, in this embodiment, since the accumulation periods of all the pixels can be set at the same time, the timing of the accumulation period for each pixel as in the first and second embodiments described above. Does not occur when a fast-moving subject is imaged, which occurs when the image is different.

As an example for realizing the third embodiment, the amplification gate 6 and the reset gate 4 are formed of the same layer, for example, a first polysilicon layer, and then the address line 9 and the transfer gate 13 are formed. May be formed of a second polysilicon layer, which is a different layer from the amplification gate 6, and the address capacitor 8 may be formed of a third polysilicon layer.

Further, also in this embodiment, the common gate and the address line are formed linearly in the horizontal direction, and the delay characteristics are excellent. Further, in the embodiment, after the amplification gate 6 and the transfer gate 13 are arranged at positions adjacent to each other, a common wiring for the transfer gate 13 is laminated on the amplification gate 6, An increase in the pixel area due to the addition of a new component is minimized, thereby realizing a structure that is very suitable as a configuration of a fine pixel.

As a modification of the third embodiment, the active region can be formed in the order of photodiode, transfer gate, storage diode, reset gate, drain, amplification gate, and source from the top. It is. In the case of such a configuration, the operation can be realized by slightly changing the embodiment.

However, LOCOS (Local Oxidation), which is a general element isolation method, is used as a method for forming an active region.
It is known that the corner of the edge of the active region is rounded when using the (Silicone) method. Therefore,
In the above modification, the photodiode formed at the end of the active region is directly affected by the rounding described above, so that the area of the photodiode for photoelectric conversion changes and is reduced. Or there is a high possibility that it will vary.

On the other hand, according to the third embodiment, the photodiode 3 is not located at the end of the active region 1 and is not affected by the rounding of the end of the active region in the element isolation. A photodiode can be formed stably.

Next, a fourth embodiment of the present invention will be described with reference to FIGS. 6A and 6B are diagrams for explaining the configuration of a pixel region of an amplification type solid-state imaging device according to a fourth embodiment of the present invention, wherein FIG. 6A is a plan pattern diagram, FIG. The configuration of eight pixels in four rows and two columns is shown. FIG. 7 is a timing chart for explaining the operation of the fourth embodiment.

The internal structure of the active region 1 and the arrangement of the active region 1 in the fourth embodiment are the same as those in the third embodiment described above, and the effects in the third embodiment are exactly the same. Can be obtained.

In the fourth embodiment, the function of the address line 9 is provided in the transfer gate 13, and the address line 9 and the address capacitor 8 in the third embodiment need to be formed. Absent.

That is, the common wiring of the transfer gates 13 stacked on the amplification gate 6 forms the capacitive coupling 8 in the stacked portion, and a line selection signal is sent to the transfer gate 13. The same function can be realized by applying the voltage.

However, the applied voltage for line selection is lower than the voltage for turning on the transfer gate 13, the thickness of the gate insulating film of the transfer gate 13, the channel impurity concentration, and the capacitance coupling portion 8. It is necessary to appropriately set the thickness of the interlayer insulating film and the area of the laminated region.

As described above, according to the fourth embodiment,
Processes for realizing a multilayer gate structure can be greatly simplified. That is, after forming the amplification gate 6 and the reset gate 4 with the first polysilicon layer, the transfer gate 13 may be formed with the second polysilicon layer of a different layer from the amplification gate 6, so that the number of steps is greatly reduced. The yield can be reduced, and at the same time, the yield is greatly improved.

Further, since the number of common gates and address lines which are connection lines with driving circuits existing around the pixel area is 3/4 of the conventional number, there is also an effect that the configuration of the driving circuit is simplified.

Next, a fifth embodiment of the present invention will be described. 8A and 8B illustrate a pixel configuration of an amplification type solid-state imaging device according to a fifth embodiment of the present invention. FIG. 8A is a plane pattern diagram, and FIG. 8B is an AA ′ line of FIG. FIG. 3C is a partial cross-sectional view taken along a line, and FIG.
(A) and (c) show an 8-pixel configuration of 4 rows and 2 columns.

In the fifth embodiment, the arrangement of the active region 1 and the arrangement of the common gate are the same as those of the third and fourth embodiments.
This embodiment is the same as the above embodiment, and the effect can be obtained in exactly the same manner.

In the fifth embodiment, the method of selecting a line is performed by the address gate 14. Therefore,
By providing the address gate 14, the address line 9 and the address capacitor 8 in FIG.

That is, as the internal configuration of the active region 1, the storage diode 12, the transfer gate 1
Eight components are arranged in the order of 3, photodiode 3, reset gate 4, drain 5, amplification gate 6, address gate 14, and source 7, and the address gate 14 is added as a new component. .

The address gate 14 is connected to the transfer gate 1
In the part where the common wiring 3 is stacked on the amplification gate 6, the gate length of the amplification gate 6 is made shorter than the width of the transfer gate wiring, and the position is appropriately arranged, so that a so-called double gate of a two-layer gate is formed. It is provided as a structure.

The operation of this embodiment is almost the same as that of the third embodiment described above. To select a line, a voltage for line selection is applied to the transfer gate 13 so that the address gate can be operated. 14 needs to be turned on.

Here, an example for realizing the fifth embodiment will be described. First, an amplification gate 6 and a reset gate 7 are formed from the first polysilicon layer. Then, in a subsequent step, the transfer gate 13 also serving as the address gate 14 is formed. Therefore, the manufacturing process is greatly shortened, and at the same time, the manufacturing yield is improved.

Further, in the above-described third embodiment, it is necessary to control the gate insulating film thickness of the transfer gate 13 and the interlayer insulating film thickness with the amplification gate 6 independently.
According to the embodiment, the control is only performed on the control of the gate insulating film thickness of the transfer gate 13 and the address gate 14, and there is also an effect that the management of the manufacturing process is simplified.

Of course, also in the fifth embodiment,
Process control is required to make the voltage at which the address gate 14 turns on lower than the voltage at which the transfer gate 13 turns on. However, in this embodiment, since both are gates formed in the same layer, it can be easily realized only by controlling the channel impurity concentration.

Next, a sixth embodiment of the present invention will be described. FIGS. 9A and 9B are diagrams for explaining a pixel configuration of an amplification type solid-state imaging device according to a sixth embodiment of the present invention, wherein FIG. 9A is a plan pattern diagram, and FIG.
2 shows a two-pixel configuration in a row and a column.

In the sixth embodiment, the active region 1
Are present in one pixel in the same manner as in the first to fifth embodiments described above. However, a method for sharing with vertically adjacent pixels, a method for arranging the active region 1, and a method for The internal configuration is different.

In the sixth embodiment, the adjacent active regions 1 are arranged at the same position in the vertical direction. However, the internal structure of the active region 1 is different between the left and right adjacent active regions. It has a symmetric structure. In the example shown in FIG. 9, in the active region 1 on the left side inside the pixel, the source 7, the amplification gate 6, and the drain 5 (the drain line 1)
0), a reset gate 4, a photodiode 3, a transfer gate 13, and a storage diode 12 in this order. On the other hand, the active region 1 on the right side inside the pixel has the same configuration in reverse order from the bottom.

The structure for line selection in FIG.
Similarly to the above-described fourth embodiment, the wiring of the transfer gate 13 is capacitive coupling formed in a region stacked with the amplification gate 6, and the line selection is performed by applying a line selection voltage to the transfer gate 13. Is performed. Therefore, address lines and address capacitors are not required.

Also in the sixth embodiment, the amplification gate 6 can be connected with an extremely short wiring length between adjacent active regions, and the reset gate 4 and the transfer gate 13 of the common gate are linearly formed in the horizontal direction. Is formed in
The same effects as in the first to fifth embodiments described above remain. Therefore, an extremely fine pixel can be formed, and an element having excellent horizontal resolution characteristics and noise characteristics can be manufactured by a simple process.

Further, in the sixth embodiment, as shown in FIG. 9, there is a feature that the interval between the amplification gate 6 and the reset gate 7 formed simultaneously in the first layer, for example, the first polysilicon layer can be increased. is there. The greatest point is the increase in the same layer pattern interval at the portion where the amplification gate 6 is connected to the storage diode 12. In FIG. 9, there is a problem with the same-layer pattern interval in a portion where the amplification gate 6 and the storage diode 12 are connected and exist between pixels vertically adjacent to each other with the element isolation region 2 interposed therebetween. In FIG. 9, the above-mentioned pattern interval of the same layer is arranged to be equal to the element isolation interval, and is an interval which is easy to process in the manufacturing process. Therefore, device manufacturing is easy and a high manufacturing yield can be obtained.

Further, in this embodiment, as shown in FIG. 9, two vertically adjacent two
The reset gate 4 is shared by the pixels. This allows
The connection lines between the pixel region, which is the horizontal common gate line and the address line, and the peripheral circuit are １ ／ of the conventional structure, and the configuration of the peripheral circuit is further facilitated. At the same time, the production yield is further improved by reducing the number of wirings to half.

The operation of the sixth embodiment shown in FIG. 9 is almost the same as the operation of the above-described fourth embodiment. That is, as shown in the timing chart of FIG. 10, the reset operation related to the accumulation is performed simultaneously for all the pixels, and the reset for each line utilizes the feature that the reset gate 4 and the transfer gate 13 are simultaneously turned on. I have.

Further, as shown in FIG.
By utilizing the fact that the source 7 does not exist between them, the drain line 10 can be shared between vertically adjacent pixels, and the connection point with the peripheral circuit can be reduced to 1/2 of the conventional one. It is also possible to reduce to.

Further, in the sixth embodiment, the internal configuration of the active region has a vertically symmetric structure between the active regions adjacent to each other on the left and right. However, the internal configuration may be changed as necessary. It is, of course, possible.

FIG. 11 is a plan pattern diagram for explaining a pixel configuration of an amplification type solid-state imaging device according to a seventh embodiment of the present invention, and shows a two-pixel configuration with two rows and one column. In the seventh embodiment, as shown in FIG.
A dummy gate wiring 15 having no function as a gate or a wiring is provided on the element isolation region 2 between vertically adjacent pixels.
Are arranged. Thereby, it is also possible to suppress a height difference inside the pixel region.

To realize the embodiment, for example, FIG.
As shown in FIG. 1, when the transfer gate 13 is formed, the transfer gate 13 may be formed of the same layer of second polysilicon. The occurrence rate of the wiring short due to the presence of the dummy gate wiring 15 is the square root of the occurrence rate of the wiring short in the conventional structure in which the dummy gate wiring 15 functions, and the decrease in the yield due to the structure can be ignored.

Conversely, the presence of the dummy gate wiring 15 reduces the height difference inside the pixel region, thereby enabling more uniform exposure in the photolithography process in the manufacturing process and improving the processing accuracy. At the same time, the yield is improved.

Next, an eighth embodiment of the present invention will be described. FIG. 12 is a plan pattern diagram for explaining the pixel configuration of the amplification type solid-state imaging device according to the eighth embodiment of the present invention, in particular, the arrangement of signal lines and drain lines. The configuration is shown. FIG.
In this case, the active region, the gate, the address line, and the like (not shown) are matched in any of FIGS. 1, 3, 4, 6, and 8.

In the eighth embodiment shown in FIG. 12, the drain line 10 connecting the drain inside the pixel and the peripheral circuit is formed as a lower layer wiring, for example, a first aluminum wiring, and furthermore, the address wiring is formed. Are formed linearly in the horizontal direction. Incidentally, reference numeral 16 denotes a drain contact, and reference numeral 17 denotes a source contact.

According to the embodiment, the drain line 1
Since 0 is wired with the shortest distance to the peripheral circuit, its delay characteristic becomes extremely good. In addition, since the drain line 10 is formed by the lower layer wiring, the degree of freedom of arrangement of the signal line 11 for the output current from the source 7 inside the pixel formed by the upper layer wiring is greatly improved.

Conventionally, the drain line is an upper wiring and the signal line is a lower wiring. A signal line, which is a wiring in the vertical direction, needs to be arranged with an appropriate distance from an adjacent signal line within the horizontal width of a pixel, and must not be arranged on a photodiode that performs photoelectric conversion at the same time.

Further, since there is also a wiring at the connection point between the drain line and the drain, it is necessary to arrange the signal line between the drain and the photodiode while maintaining an appropriate distance from the drain. Therefore, it is necessary to process the signal line extremely thinly or to increase the pixel size, which is not suitable for the configuration of a fine pixel.

According to the eighth embodiment, since the drain line 10 is formed by the lower wiring, a fine pixel can be formed even if the signal line 11 has a sufficient width. Further, in an amplification type solid-state imaging device of a type in which a photoelectric conversion layer is stacked, having a structure shown in FIG.
It is extremely important that the drain line 10 be a lower wiring.

That is, when the lower wiring pattern exists in both the photodiode 3 and the drain 5 adjacent to each other in the pixel, the signal line 11 is arranged between these lower wiring patterns, thereby achieving a fine pixel configuration. In this case, the arrangement of the signal lines 11 is extremely difficult.

According to the eighth embodiment, as shown in FIG. 12, a signal line 11 having a sufficient interval from the lower wiring pattern on the photodiode 3 can be arranged. Also in the amplification type solid-state imaging device, it is possible to construct fine pixels having dimensions equivalent to 4 rows and 4 columns of the wiring rule.

FIG. 13 is a plane pattern diagram for explaining the pixel configuration of the amplification type solid-state imaging device according to the ninth embodiment of the present invention, in particular, the arrangement of signal lines and drain lines. 8 is shown.

In FIG. 13, the drain line light shielding film 1
By covering the photodiode 3 with 8 and providing a plurality of pixels that block incident light, it is possible to always obtain a dark output without forming a light-shielding layer with a layer different from the wiring.

According to the embodiment, since the light shielding layer conventionally formed in a separate step from the wiring can be formed at the same time as the wiring, the manufacturing process can be greatly reduced. Alternatively, it is possible to more reliably obtain a dark signal by using it together with the conventional light shielding layer forming step.

Next, a tenth embodiment of the present invention will be described. FIG. 14 is a schematic diagram for explaining a cross-sectional structure of a pixel section of an amplification type solid-state imaging device according to a tenth embodiment of the present invention.

In FIG. 14, lead wires are formed on the photodiode 3 for photoelectric conversion formed on the p-type substrate 19, and the pixel electrode 20 separated for each pixel and the photodiode 3 are connected. ing. Further, the pixel electrode 20
Is formed, the photoelectric conversion film 21 and the transparent electrode 22 are formed. Incidentally, reference numeral 23 denotes an insulating layer.

In the tenth embodiment, a voltage is externally applied to the transparent electrode 22 to form an electric field inside the photoelectric conversion film 21. Then, the signal charges generated inside the photoelectric conversion film 21 are collected by the photodiode 3,
The potential of the photodiode 3 is modulated by the collected signal charges. After the potential of the photodiode 3 is modulated by the incident light, an output signal is obtained by the operation of the above-described first to seventh embodiments.

According to the embodiment, it is possible to prevent a decrease in sensitivity due to a reduction in the area of the photodiode due to the configuration of the fine pixel structure, and it is possible to obtain an amplification type solid-state imaging device with extremely high sensitivity. In addition, various modifications can be made without departing from the gist of the present invention.

[0095]

As described above, according to the present invention, it is possible to provide an amplification type solid-state imaging device capable of realizing a finer pixel size without reducing the effective area due to the element isolation region.

[Brief description of the drawings]

FIGS. 1A and 1B show a cell structure of a pixel portion of an amplification type solid-state imaging device according to a first embodiment of the present invention, wherein FIG. 1A is a plan pattern diagram and FIG. 1B is a circuit diagram.

FIG. 2 is a timing chart illustrating an example of an operation according to the first embodiment.

FIG. 3 illustrates a cell structure of a pixel region of an amplification type solid-state imaging device according to a second embodiment of the present invention;
(A) is a plane pattern diagram, (b) is a circuit diagram.

FIGS. 4A and 4B are diagrams illustrating a configuration of a pixel unit of an amplification type solid-state imaging device according to a third embodiment of the present invention, where FIG. 4A is a plan pattern diagram and FIG.

FIG. 5 is a timing chart for explaining the operation and effect of the third embodiment.

FIG. 6 is a diagram for explaining a configuration of a pixel region of an amplification type solid-state imaging device according to a fourth embodiment of the present invention;
(A) is a plane pattern diagram, (b) is a circuit diagram.

FIG. 7 is a timing chart for explaining the operation of the fourth embodiment.

8A and 8B illustrate a pixel configuration of an amplification type solid-state imaging device according to a fifth embodiment of the present invention, where FIG. 8A is a plan pattern diagram, and FIG. 8B is an AA ′ line of FIG. FIG. 3C is a partial cross-sectional view along the line, and FIG. 3C is a circuit diagram of FIG.

FIGS. 9A and 9B are diagrams for explaining a pixel configuration of an amplification type solid-state imaging device according to a sixth embodiment of the present invention, where FIG. 9A is a plan pattern diagram and FIG. 9B is a circuit diagram.

FIG. 10 is a timing chart for explaining the operation of the sixth embodiment.

FIG. 11 is a plan pattern diagram for explaining a pixel configuration of an amplification type solid-state imaging device according to a seventh embodiment of the present invention.

FIG. 12 is a plan pattern diagram for explaining a pixel configuration of an amplification type solid-state imaging device according to an eighth embodiment of the present invention, particularly, an arrangement of signal lines and drain lines.

FIG. 13 is a plan pattern diagram for explaining a pixel configuration of an amplification type solid-state imaging device according to a ninth embodiment of the present invention, particularly, an arrangement of signal lines and drain lines.

FIG. 14 is a schematic diagram for explaining a cross-sectional structure of a pixel section of an amplification type solid-state imaging device according to a tenth embodiment of the present invention.

FIG. 15 is a plan view of a cell illustrating a structure of a conventional amplification type solid-state imaging device.

[Explanation of symbols]

 Reference Signs List 1 active region, 2 element isolation region, 3 photodiode, 4 reset gate, 5 drain, 6 amplifying gate, 7 source, 8 address capacitor, 9 address line, 10 drain line, 11 signal line, 12 storage diode, 13 transfer gate , 14 address gate, 15 dummy gate wiring.

 ──────────────────────────────────────────────────続 き Continuing from the front page (72) Inventor Tetsuya Yamaguchi 1 Tokoba Toshiba-cho, Komukai-ku, Kawasaki-shi, Kanagawa Inside Toshiba R & D Center

Claims (5)

[Claims] A photoelectric conversion means for performing photoelectric conversion; a storage means for storing the signal charge by the photoelectric conversion; a reset means for resetting the stored signal charge; and an amplification transistor modulated by the stored signal charge. A readout means for reading out a signal current from the amplifying transistor, wherein the unitary pixel has a plurality of active regions forming a source, a drain and a gate in the unit pixel, and the active region is The amplifying gate of the amplifying transistor is shared between pixels adjacent in a first direction and a second direction opposite to the first direction, and an amplifying gate of the amplifying transistor is connected to a third direction orthogonal to the first and second directions. The active region, which is connected to an active region adjacent in a fourth direction opposite to the third direction and includes a photodiode as a photoelectric conversion unit, is provided in the first and second directions. Amplifying solid-state imaging device, characterized in that the active region including the amplification transistor of the pixel adjacent to or Re. 2. A photoelectric conversion means for performing photoelectric conversion, a storage means for storing signal charges by the photoelectric conversion, a reset means for resetting the stored signal charges, and an amplification transistor modulated by the stored signal charges. And a reading means for reading a signal current from the amplifying transistor, wherein a plurality of transistor structures having a source, a drain and a gate are arranged in a first direction and a direction opposite to the first direction An amplification type solid-state imaging device comprising a plurality of active regions arranged in series in a second direction, wherein the active regions are arranged in a checkered pattern. 3. A photoelectric conversion unit for performing photoelectric conversion, a storage unit for storing signal charges by the photoelectric conversion, a reset unit for resetting the stored signal charges, and an amplification transistor modulated by the stored signal charges. And a reading means for reading a signal current from the amplifying transistor, wherein a plurality of transistor structures having a source, a drain and a gate are arranged in a first direction and in a direction opposite to the first direction. A third direction orthogonal to the first and second directions and a fourth direction opposite to the third direction, which are arranged in series in the second direction;
Having a plurality of different first and second active regions arranged adjacent to each other in a direction, and commonly used between pixels adjacent to the first and second directions and sharing the active region. An amplification type solid-state imaging device, comprising: 4. A third direction orthogonal to the first and second directions.
The common gate and common wiring commonly used between the active regions arranged in the third direction and the fourth direction opposite to the third direction are formed linearly in the third direction and the fourth direction. The amplification type solid-state imaging device according to claim 1, wherein: 5. The device according to claim 1, wherein the drain wiring for connecting the drain to a peripheral circuit outside the pixel region is formed of a wiring lower than a signal line. Amplification type solid-state imaging device.