JPH1093009A - Semiconductor chip module, multi-chip module and electronic device - Google Patents

Semiconductor chip module, multi-chip module and electronic device

Info

Publication number
JPH1093009A
JPH1093009A JP24506196A JP24506196A JPH1093009A JP H1093009 A JPH1093009 A JP H1093009A JP 24506196 A JP24506196 A JP 24506196A JP 24506196 A JP24506196 A JP 24506196A JP H1093009 A JPH1093009 A JP H1093009A
Authority
JP
Japan
Prior art keywords
substrate
electrodes
chip mounting
chip
predetermined
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP24506196A
Other languages
Japanese (ja)
Inventor
Yutaka Ikeda
豊 池田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Toshiba Computer Engineering Corp
Original Assignee
Toshiba Corp
Toshiba Computer Engineering Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Toshiba Computer Engineering Corp filed Critical Toshiba Corp
Priority to JP24506196A priority Critical patent/JPH1093009A/en
Publication of JPH1093009A publication Critical patent/JPH1093009A/en
Pending legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/0555Shape
    • H01L2224/05552Shape in top view
    • H01L2224/05553Shape in top view being rectangular
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    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
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    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554Coating
    • H01L2224/45565Single coating layer
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    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
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    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48135Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • HELECTRICITY
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    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/48463Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48464Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area also being a ball bond, i.e. ball-to-ball
    • HELECTRICITY
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    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
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    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/4911Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49113Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
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    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/4912Layout
    • H01L2224/49171Fan-out arrangements
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    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Dram (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor chip module having a high processing speed with few signal layers. SOLUTION: The module comprises an MCM structure 1, having surface layer wiring patterns 7, inner layer wiring patterns 8, a chip-mounting parts at specified areas of the surface, and pads 2 connected to the wiring patterns 7, 8 round the chip mounting areas, bare chips LSI 3a, 3b which are mounted on the chip-mounting areas on the substrate 1 and have pads 4a, 4b on the surface, bonding wires 6 which connect the pads 4a, 4b mutually between the chips LSI 3a, 3b, connected to the adjacent chip-mounting parts on the substrate 1, and bonding wires 5 which connect predetermined pads 2 on the substrate 1 to the pads 4a, 4b on the chips LSI 3a, 3b.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、複数の半導体チッ
プ(ベアチップLSI)からなる半導体チップモジュー
ル(マルチチップモジュール)およびこれを適用した電
子機器に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor chip module (multi-chip module) including a plurality of semiconductor chips (bare chip LSI) and an electronic apparatus using the same.

【0002】[0002]

【従来の技術】近年、半導体チップモジュールの実装密
度の向上および複数の半導体チップ間の伝搬遅延の軽減
による処理速度の向上等を目的として、ウエハから切り
出した複数のベアチップを一つの基板に直接実装したマ
ルチチップモジュール(以下、MCMと称する)が用い
られるようになってきている。
2. Description of the Related Art In recent years, a plurality of bare chips cut from a wafer are directly mounted on a single substrate for the purpose of improving the mounting density of semiconductor chip modules and improving the processing speed by reducing propagation delay between the plurality of semiconductor chips. Multi-chip modules (hereinafter, referred to as MCMs) have been used.

【0003】図8は、このようなMCMの例を示してい
る。この場合、MCM基板101には二つのベアチップ
LSI103a,103bが搭載され、ベアチップLS
I103a,103bにおけるベアチップLSIパッド
104a,104bとMCM基板101上の複数のMC
M基板パッド102とが複数のボンディングワイヤ10
5によってそれぞれ接続されている。
FIG. 8 shows an example of such an MCM. In this case, two bare chip LSIs 103a and 103b are mounted on the MCM substrate 101, and the bare chip LS
Bare chip LSI pads 104a and 104b in I103a and 103b and a plurality of MCs on MCM substrate 101
M substrate pad 102 and a plurality of bonding wires 10
5, respectively.

【0004】ここで、MCM基板101には表面層配線
パターン106および内層配線パターン107が設けら
れており、これらの配線パターン106,107によ
り、対応する複数のMCM基板パッド102が相互に接
続されている。この結果、対応するベアチップLSIパ
ッド104aと104bとは、ボンディングワイヤ10
5および配線パターン106,107を介して接続され
る。
Here, a surface layer wiring pattern 106 and an inner layer wiring pattern 107 are provided on the MCM substrate 101, and a plurality of corresponding MCM substrate pads 102 are connected to each other by these wiring patterns 106 and 107. I have. As a result, the corresponding bare chip LSI pads 104a and 104b are
5 and wiring patterns 106 and 107.

【0005】また、このようなMCMはベアチップLS
I103a,103bおよびボンディングワイヤ105
を樹脂によってモールドした後、BGA(ボールグリッ
ドアレイ)やクリップリードによって電子機器のシステ
ム基板などに実装して使用されることが一般的である。
[0005] Further, such an MCM is a bare chip LS.
I103a, 103b and bonding wire 105
Is molded with a resin, and then mounted on a system board or the like of an electronic device using a BGA (ball grid array) or a clip lead.

【0006】[0006]

【発明が解決しようとする課題】上述したように、従来
のMCMではベアチップLSI103a,103b間の
接続は、基板101の配線パターン106,107を介
して行われていたため、ボンディングワイヤ105によ
りベアチップLSIパッド104a,104bとMCM
基板パッド102とを接続しなければならないという問
題があった。
As described above, in the conventional MCM, the connection between the bare chip LSIs 103a and 103b is performed through the wiring patterns 106 and 107 of the substrate 101. 104a, 104b and MCM
There is a problem that the substrate pad 102 must be connected.

【0007】また、ベアチップLSI103a,103
bのピン数(パッド数)が大きくなると、MCM基板1
01に設けるべき配線パターン106,107の数が増
え、これに伴い配線パターン106,107を設けるた
めの信号層数が増大してコスト高になってしまう。さら
に、ベアチップLSI103a,103b間の信号の伝
搬時間が増大するため、MCM全体の処理速度が影響を
受けてしまうという問題もある。本発明は、少ない信号
層数で高速処理が可能な半導体チップモジュール、マル
チチップモジュールおよび電子機器を提供することを目
的とする。
Further, bare chip LSIs 103a and 103
When the number of pins (number of pads) of b increases, the MCM substrate 1
01, the number of wiring patterns 106 and 107 to be provided increases, and accordingly, the number of signal layers for providing the wiring patterns 106 and 107 increases, resulting in an increase in cost. Further, since the signal propagation time between the bare chip LSIs 103a and 103b increases, there is a problem that the processing speed of the entire MCM is affected. An object of the present invention is to provide a semiconductor chip module, a multi-chip module, and an electronic device capable of high-speed processing with a small number of signal layers.

【0008】[0008]

【課題を解決するための手段】上記課題を解決するため
本発明に係る半導体チップモジュールは、表面および内
層にそれぞれ所定の配線パターンが形成され、表面の所
定面部に複数のチップ実装部を有し、そのチップ実装部
の周部に配線パターンに接続された複数の電極を設けて
なる基板と、この基板上の複数のチップ実装部にそれぞ
れ実装され、表面に複数の電極をそれぞれ備えた複数の
半導体チップと、これら複数の半導体チップ相互間にお
いて予め定められた複数の電極をそれぞれ接続する複数
の第1の接続手段と、予め定められた基板上の複数の電
極と半導体チップ上の複数の電極とをそれぞれ接続する
複数の第2の接続手段とを備えている。
In order to solve the above problems, a semiconductor chip module according to the present invention has a predetermined wiring pattern formed on a surface and an inner layer, and has a plurality of chip mounting portions on a predetermined surface portion of the surface. A substrate provided with a plurality of electrodes connected to a wiring pattern on the periphery of the chip mounting portion, and a plurality of electrodes each mounted on the plurality of chip mounting portions on the substrate and provided with a plurality of electrodes on the surface. A semiconductor chip, a plurality of first connection means respectively connecting a plurality of predetermined electrodes between the plurality of semiconductor chips, a plurality of electrodes on a predetermined substrate, and a plurality of electrodes on the semiconductor chip And a plurality of second connection means for respectively connecting.

【0009】本発明では、第1の接続手段により半導体
チップ相互間を直接接続するので、その分だけ基板に設
けるべき配線パターンが少なくなる。従って、基板の信
号層数が減少するので製造コストを下げることができ
る。この際、第1の接続手段の接続経路が基板表面の配
線パターンにおける配線経路と立体的に交差するように
すれば、従来は内層する必要があった配線パターンを基
板表面に設けることができるので、さらに信号層数を減
らすことができる。
In the present invention, since the semiconductor chips are directly connected to each other by the first connection means, the number of wiring patterns to be provided on the substrate is reduced accordingly. Therefore, the number of signal layers on the substrate is reduced, so that the manufacturing cost can be reduced. At this time, if the connection path of the first connection means is three-dimensionally intersected with the wiring path in the wiring pattern on the substrate surface, the wiring pattern which conventionally had to be formed as an inner layer can be provided on the substrate surface. , The number of signal layers can be further reduced.

【0010】また、第1の接続手段で接続された半導体
チップ相互間は信号の伝搬時間が減少するので処理が高
速化する。この場合、基板上で隣合うチップ実装部にそ
れぞれ実装された半導体チップ相互間において隣接する
電極同士をそれぞれ接続するようにすれば、この間の接
続経路が最短になりさらに伝搬時間が少なくなる。
In addition, since the signal propagation time is reduced between the semiconductor chips connected by the first connecting means, the processing speed is increased. In this case, if the electrodes adjacent to each other are connected to each other between the semiconductor chips mounted on the chip mounting portions adjacent to each other on the substrate, the connection path between them is minimized, and the propagation time is further reduced.

【0011】ここで、第1および第2の接続手段が導体
本体およびこの導体本体を覆う絶縁被覆部から構成され
るようにすれば、これら第1および第2の接続手段が接
触した場合でもショートすることがなくなるので、半導
体チップ相互間で接続する必要のある全ての電極を第2
の接続手段で接続することができるようになる。従っ
て、基板に設けるべき配線パターンおよび信号層数をさ
らに減らすことができるので、製造コストがさらに低下
する。
Here, if the first and second connecting means are constituted by a conductor body and an insulating coating covering the conductor body, short-circuiting occurs even when the first and second connecting means come into contact with each other. All the electrodes that need to be connected between the semiconductor chips
Connection means. Therefore, since the number of wiring patterns and signal layers to be provided on the substrate can be further reduced, the manufacturing cost is further reduced.

【0012】なお、本発明の他の態様では半導体チップ
モジュールを構成要素の一つとして電子機器を生成す
る。本発明のさらに別の態様に係るマルチチップモジュ
ールは、表面および内層に所定の配線パターンがそれぞ
れ形成され、表面の所定面部に複数のチップ実装部を有
し、そのチップ実装部の周部に配線パターンに接続され
た複数のパッドを設けてなる基板と、この基板上の複数
のチップ実装部にそれぞれ実装され、表面に複数のパッ
ドをそれぞれ備えた複数のベアチップLSIと、基板上
で隣合うチップ実装部にそれぞれ接続された前記ベアチ
ップLSI相互間において隣接する電極同士をそれぞれ
接続する複数の第1のボンディングワイヤと、予め定め
られた基板上の複数のパッドと半導体チップ上の複数の
パッドとをそれぞれ接続する複数の第2のボンディング
ワイヤとを具備する。なお、第1および第2のボンディ
ングワイヤを、ワイヤ本体およびワイヤ本体を覆う絶縁
皮膜によって形成するようにした場合には、ベアチップ
LSI相互間において隣接据える電極同士だけでなく、
任意の電極同士を接続することができる。
In another aspect of the present invention, an electronic device is generated by using a semiconductor chip module as one of the constituent elements. A multichip module according to still another aspect of the present invention has a predetermined wiring pattern formed on a surface and an inner layer, a plurality of chip mounting portions on a predetermined surface portion of the surface, and wiring around a periphery of the chip mounting portion. A substrate provided with a plurality of pads connected to a pattern, a plurality of bare chip LSIs respectively mounted on a plurality of chip mounting portions on the substrate and provided with a plurality of pads on the surface, and a chip adjacent to the substrate A plurality of first bonding wires for connecting adjacent electrodes between the bare chip LSIs connected to the mounting portion, and a plurality of pads on a predetermined substrate and a plurality of pads on a semiconductor chip, respectively. A plurality of second bonding wires connected to each other. In the case where the first and second bonding wires are formed by the wire body and the insulating film covering the wire body, not only the electrodes placed adjacent to each other between the bare chip LSIs, but also
Arbitrary electrodes can be connected to each other.

【0013】[0013]

【発明の実施の形態】BEST MODE FOR CARRYING OUT THE INVENTION

(第1の実施形態)図1は、本発明の第1の実施形態に
係るMCMの概略構成を示す図である。このMCMは、
MCM基板1に二つのベアチップLSI3a,3bを実
装したものである。
(First Embodiment) FIG. 1 is a diagram showing a schematic configuration of an MCM according to a first embodiment of the present invention. This MCM is
The MCM board 1 has two bare chips LSI 3a and 3b mounted thereon.

【0014】MCM基板1は、ガラス・エポキシ樹脂や
セラミックなどの絶縁性基板の表面層および内層に銅箔
等を用いたエッチング処理によって所定の回路設計に基
づく表面層配線パターン7および1層もしくはそれ以上
の内層配線パターン8を形成し、さらに予め定められた
ベアチップLSI3a,3bの実装部分の周囲に表面層
配線パターン7もしくは内層配線パターン8に接続され
る複数のMCM基板パッド2を設けたものである。な
お、これら表面層配線パターン7および内層配線パター
ン8は、回路設計に従い図示されていないスルーホール
により接続されているものとする。
The MCM substrate 1 has a surface layer wiring pattern 7 and one or more layers based on a predetermined circuit design by an etching process using a copper foil or the like for a surface layer and an inner layer of an insulating substrate such as glass epoxy resin or ceramic. The above inner layer wiring pattern 8 is formed, and a plurality of MCM board pads 2 connected to the surface layer wiring pattern 7 or the inner layer wiring pattern 8 are provided around a predetermined mounting portion of the bare chip LSIs 3a and 3b. is there. The surface layer wiring pattern 7 and the inner layer wiring pattern 8 are connected by through holes (not shown) according to the circuit design.

【0015】ここで、表面層配線パターン7および内層
配線パターン8における各配線経路は、ベアチップLS
Iパッド4a,4b相互間を接続するボンディングワイ
ヤ6と立体的に交差するように設けられることが望まし
い。
Here, each wiring path in the surface layer wiring pattern 7 and the inner layer wiring pattern 8 is a bare chip LS
It is desirable that the I-pads 4a and 4b are provided so as to three-dimensionally intersect with the bonding wires 6 connecting the I-pads 4a and 4b to each other.

【0016】ベアチップLSI3a,3bは、ウエハか
ら切り出したばかりでパッケージに封入されていない状
態のマイクロプロセッサ、メモリなどの機能を有するチ
ップであり、エポキシ樹脂もしくは銀ペースト等の処理
により直接MCM基板1上に実装されている。
The bare chip LSIs 3a and 3b are chips having functions of a microprocessor, a memory, and the like, which have just been cut out from a wafer and are not sealed in a package, and are directly mounted on the MCM substrate 1 by processing with an epoxy resin or a silver paste. Has been implemented.

【0017】ベアチップLSI3a,3bには、アルミ
ニウム蒸着等によって形成された電極としてのベアチッ
プLSIパッド4a、4bがそれぞれ複数個設けられて
いる。これらベアチップLSIパッド4a,4bの数
は、ベアチップLSI3a,3bの機能に応じて決ま
り、例えばマイクロプロセッサの場合は300〜500
個程度である。また、各ベアチップLSIパッド4a,
4bの大きさは100μm角程度であることが望まし
い。
The bare chip LSIs 3a and 3b are provided with a plurality of bare chip LSI pads 4a and 4b as electrodes formed by aluminum evaporation or the like, respectively. The number of the bare chip LSI pads 4a and 4b is determined according to the functions of the bare chip LSIs 3a and 3b.
About one. Further, each bare chip LSI pad 4a,
It is desirable that the size of 4b is about 100 μm square.

【0018】ここで、MCM基板1上でベアチップLS
I3a,3b相互間で隣接するベアチップLSIパッド
4aおよびベアチップLSIパッド4b、すなわちベア
チップLSI3aの右周辺のベアチップLSIパッド4
aおよびベアチップLSI3bの左周辺のベアチップL
SIパッド4bは、互いに接続したときにベアチップL
SI3a,3b相互間で使用する頻度の高い信号線、例
えばアドレスバス、データバスなどを形成することが望
ましい。
Here, the bare chip LS on the MCM substrate 1
Bare chip LSI pad 4a and bare chip LSI pad 4b adjacent to each other between I3a and 3b, that is, bare chip LSI pad 4 on the right periphery of bare chip LSI 3a
a and bare chip L on the left periphery of bare chip LSI 3b
The SI pad 4b is connected to the bare chip L when connected to each other.
It is desirable to form a signal line frequently used between the SIs 3a and 3b, for example, an address bus and a data bus.

【0019】一方、隣接しないベアチップLSIパッド
4aおよびベアチップLSIパッド4b、すなわち図1
でベアチップLSI3aの上周辺、下周辺および左周辺
のベアチップLSIパッド4aおよびベアチップLSI
3bの上周辺、下周辺および右周辺のベアチップLSI
パッド4bは、接続すべきMCM基板1上の複数のMC
M基板パッド2と相対応するよう配置される。
On the other hand, bare chip LSI pad 4a and bare chip LSI pad 4b which are not adjacent to each other,
The bare chip LSI pad 4a and the bare chip LSI in the upper, lower, and left peripheral areas of the bare chip LSI 3a
3b bare chip LSI around the top, bottom and right
The pad 4b is connected to a plurality of MCs on the MCM substrate 1 to be connected.
It is arranged so as to correspond to M substrate pad 2.

【0020】本実施形態では、隣接するベアチップLS
Iパッド4aとベアチップLSIパッド4bとはボンデ
ィングワイヤ6により直接接続される。一方、それ以外
のベアチップLSIパッド4aとベアチップLSIパッ
ド4bとは、それぞれ対応するMCM基板パッド2との
間をボンディングワイヤ5で接続されることにより、表
面層配線パターン7もしくは内層配線パターン8を介し
て接続される。
In this embodiment, the adjacent bare chips LS
The I pad 4a and the bare chip LSI pad 4b are directly connected by a bonding wire 6. On the other hand, the other bare chip LSI pads 4a and the bare chip LSI pads 4b are connected to the corresponding MCM substrate pads 2 by bonding wires 5, so that the bare chip LSI pads 4a and the inner chip Connected.

【0021】ここで、ボンディングワイヤ5,6は直径
30μm程度の金ワイヤもしくはアルミニウムワイヤと
し、熱圧着ボンディング法および超音波ボンディング法
などの各種ボンディング方法によって接続されるものと
する。
Here, the bonding wires 5 and 6 are gold wires or aluminum wires having a diameter of about 30 μm, and are connected by various bonding methods such as a thermocompression bonding method and an ultrasonic bonding method.

【0022】また、後述の樹脂によるモールドによって
ボンディングワイヤ6同士が接触してショートすること
のないように、ベアチップLSI3a,3bにおけるベ
アチップLSI4a,4bの配置等に基づいて各ボンデ
ィングワイヤ6の長さを予め設定しておく必要がある。
The length of each bonding wire 6 is determined based on the arrangement of the bare chips LSI 4a and 4b in the bare chips LSI 3a and 3b so that the bonding wires 6 do not come into contact with each other and short-circuit due to resin molding described later. It must be set in advance.

【0023】上述したようにボンディングを行った後、
MCM基板1上のベアチップLSI3a,3bおよびボ
ンディングワイヤ5,6をエポキシなどの樹脂を用いて
モールドする。この場合、ボンディングワイヤ6が樹脂
により押しつぶされたり、立体的に交差している表面層
配線パターン7に接触するなどしてショートが起こらな
いようにする。
After performing the bonding as described above,
The bare chips LSI 3a and 3b and the bonding wires 5 and 6 on the MCM substrate 1 are molded using a resin such as epoxy. In this case, short-circuiting does not occur due to the bonding wire 6 being crushed by the resin or coming into contact with the surface layer wiring pattern 7 which intersects three-dimensionally.

【0024】図2は、上述したようにモールドを行った
場合のMCMの断面を示す図である。このように樹脂2
1によるモールドを行うことにより、ベアチップLSI
3a,3bおよびボンディングワイヤ5,6が温度、湿
度の変化や外部からの衝撃から保護されると共に互いに
絶縁される。なお、図2には内層配線パターン8を設け
る絶縁層22が示されている。
FIG. 2 is a diagram showing a cross section of the MCM when the molding is performed as described above. Thus, resin 2
1 to perform bare chip LSI
The bonding wires 3a and 3b and the bonding wires 5 and 6 are protected from changes in temperature and humidity and external shocks, and are insulated from each other. FIG. 2 shows the insulating layer 22 on which the inner wiring pattern 8 is provided.

【0025】このように本実施形態のMCMでは、MC
M基板1上で隣接するベアチップLSIパッド4aとベ
アチップLSIパッド4bとを表面層配線パターン7お
よび内層配線パターン8のいずれも介することなくボン
ディングワイヤ6のみによって直接接続する。
As described above, in the MCM of this embodiment, MC
The bare chip LSI pad 4a and the bare chip LSI pad 4b adjacent to each other on the M substrate 1 are directly connected by only the bonding wires 6 without passing through both the surface layer wiring pattern 7 and the inner layer wiring pattern 8.

【0026】従って、隣接するベアチップLSIパッド
4aとベアチップLSIパッド4bとの組の数だけMC
M基板1上に設けるべき配線数が少なくなる。また、ボ
ンディングワイヤ6と表面層配線パターン7における配
線とは立体的に交差させることができるので、従来は内
層配線パターン8にする必要があった配線についても表
面層配線パターン7としてMCM基板1上に設けること
が可能となる。以上により、MCM基板1全体の信号層
数が低減され、製造コストを下げることができる。
Therefore, the number of MCs equal to the number of pairs of adjacent bare chip LSI pads 4a and bare chip LSI pads 4b
The number of wirings to be provided on the M substrate 1 is reduced. In addition, since the bonding wires 6 and the wiring in the surface layer wiring pattern 7 can be three-dimensionally crossed with each other, the wiring that has conventionally been required to be the inner layer wiring pattern 8 is also formed on the MCM substrate 1 as the surface layer wiring pattern 7. Can be provided. As described above, the number of signal layers in the entire MCM substrate 1 is reduced, and the manufacturing cost can be reduced.

【0027】さらに、隣接するベアチップLSIパッド
4aとベアチップLSI4bとはボンディングワイヤ6
のみで結ばれるので、この間の信号の伝搬時間が短くな
って高速処理が可能になる。上述したようにMCMにお
いて使用頻度の高い信号線がボンディングワイヤ6によ
って形成されるようにすれば、MCMを効率的に動作さ
せることができる。
Further, the adjacent bare chip LSI pad 4a and bare chip LSI 4b are
Only the connection is made, so that the signal propagation time during this period is shortened, and high-speed processing becomes possible. As described above, if the signal lines frequently used in the MCM are formed by the bonding wires 6, the MCM can be operated efficiently.

【0028】次に、MCM基板1に3つのベアチップL
SIを実装した場合について説明する。図3は、このよ
うなMCMの概略構成を示す図である。なお、図3にお
いて表面層配線パターンおよび内層配線パターンは省略
している。
Next, three bare chips L are placed on the MCM substrate 1.
A case where the SI is mounted will be described. FIG. 3 is a diagram showing a schematic configuration of such an MCM. In FIG. 3, the surface layer wiring pattern and the inner layer wiring pattern are omitted.

【0029】この場合、MCM基板上で隣合うように実
装されたベアチップLSI相互間、すなわちベアチップ
LSI3a,3b相互間およびベアチップLSI3b,
3c相互間でそれぞれ隣接するベアチップLSIパッド
4a,4bおよび4b,4cをそれぞれボンディングワ
イヤ6で直接接続する。
In this case, between the bare chip LSIs mounted adjacently on the MCM substrate, that is, between the bare chip LSIs 3a and 3b and between the bare chip LSIs 3b and 3b,
Bare chip LSI pads 4a, 4b and 4b, 4c adjacent to each other between 3c are directly connected by bonding wires 6, respectively.

【0030】以下同様に、ベアチップLSIが3つより
多い場合でもMCM基板上で隣合うように実装されたベ
アチップLSI相互間で隣接するベアチップLSIパッ
ド同士をボンディングワイヤにより直接接続する。
Similarly, even when there are more than three bare chip LSIs, adjacent bare chip LSI pads are directly connected to each other by bonding wires between bare chip LSIs mounted adjacently on the MCM substrate.

【0031】(第2の実施形態)図4は、本発明の第2
の実施形態に係るMCMの概略構成を示す図である。な
お、本実施形態においては図1と相対応する部分に同一
符号を付して、第1の実施形態との相違点を中心に述べ
る。
(Second Embodiment) FIG. 4 shows a second embodiment of the present invention.
It is a figure showing the schematic structure of the MCM concerning the embodiment. In the present embodiment, portions corresponding to those in FIG. 1 are denoted by the same reference numerals, and differences from the first embodiment will be mainly described.

【0032】本実施形態は、第1の実施形態におけるボ
ンディングワイヤ5,6の代わりに表面が絶縁皮膜で覆
われたボンディングワイヤ9,10によって接続を行っ
たものである。
In this embodiment, the connection is made by bonding wires 9 and 10 whose surfaces are covered with an insulating film, instead of the bonding wires 5 and 6 in the first embodiment.

【0033】まず、接続する必要のある任意のベアチッ
プLSIパッド4a,4b相互間がボンディングワイヤ
10によって接続される。この結果、複数のボンディン
グワイヤ10では互いに接触する部分(以下、交差部分
11)が生じるが、各ボンディングワイヤ10は絶縁皮
膜で覆われているのでこの交差部分11でショートする
ことはない。
First, any bare chip LSI pads 4 a and 4 b that need to be connected are connected by bonding wires 10. As a result, a portion (hereinafter referred to as an intersecting portion 11) of the plurality of bonding wires 10 is in contact with each other. However, since each bonding wire 10 is covered with the insulating film, no short-circuit occurs at the intersecting portion 11.

【0034】一方、それ以外のベアチップLSIパッド
4aおよびベアチップLSIパッド4bは、ボンディン
グワイヤ9により対応するMCM基板パッド2にそれぞ
れ接続される。
On the other hand, the other bare chip LSI pads 4a and 4b are connected to the corresponding MCM board pads 2 by bonding wires 9, respectively.

【0035】図5は、これらボンディングワイヤ9,1
0の構成を示す断面図である。ボンディングワイヤ9,
10は、金もしくはアルミニウムによるワイヤ本体31
の表面をホルマール樹脂による絶縁皮膜32で覆うよう
に構成されている。ここで、このボンディングワイヤ
9,10を用いて例えば熱圧着ボンディング法により接
続を行うとすると、ボンディングワイヤ9,10をキャ
ピラリと呼ばれるボンディングツールから供給し、電気
放電等によりボンディングワイヤ9,10の先端に塑性
ボールを形成して、この塑性ボールを接続面に熱圧着さ
せる。この場合、塑性ボールの形成においてワイヤ本体
31を覆っていた絶縁皮膜32が蒸発するため、接続面
では変形した塑性ボールの材質がむき出しになる。
FIG. 5 shows these bonding wires 9 and 1.
FIG. 2 is a cross-sectional view showing a configuration of a zero. Bonding wire 9,
10 is a wire body 31 made of gold or aluminum
Is covered with an insulating film 32 of formal resin. Here, assuming that the bonding wires 9 and 10 are connected by, for example, a thermocompression bonding method, the bonding wires 9 and 10 are supplied from a bonding tool called a capillary, and the tips of the bonding wires 9 and 10 are discharged by electric discharge or the like. Then, a plastic ball is formed, and the plastic ball is thermocompression-bonded to the connection surface. In this case, since the insulating film 32 covering the wire main body 31 evaporates in forming the plastic ball, the material of the deformed plastic ball is exposed on the connection surface.

【0036】図6は、このようなボンディングワイヤ9
の接続面を拡大して示した図であり、MCM基板1のM
CM基板パッド2とボンディングワイヤ9とが変形した
塑性ボール33を介して接続されており、塑性ボール3
3の表面は絶縁皮膜32がはがれてワイヤ本体32の材
質がむき出しになっている。なおワイヤ本体32の直径
を30μm程度とすると接続面において変形した塑性ボ
ール33の径は50〜70μm程度になる。
FIG. 6 shows such a bonding wire 9.
FIG. 2 is an enlarged view of the connection surface of FIG.
The CM substrate pad 2 and the bonding wire 9 are connected via a deformed plastic ball 33, and the plastic ball 3
The insulating film 32 is peeled off from the surface of the wire 3, and the material of the wire body 32 is exposed. When the diameter of the wire main body 32 is about 30 μm, the diameter of the plastic ball 33 deformed on the connection surface is about 50 to 70 μm.

【0037】このように本実施形態においては、ボンデ
ィングワイヤ9,10が絶縁皮膜で覆われており互いに
ショートすることがないので、第1の実施形態のように
隣接するベアチップLSIパッド4a,4b間だけでな
く必要とされる全てのベアチップLSIパッド4a,4
b間をボンディングワイヤ10で接続することが可能と
なる。従って、MCM基板1に設けるべき配線パターン
7,8の数、ひいては信号層数がさらに減少するため、
より低コストでMCMの製造を行うことができるように
なる。
As described above, in this embodiment, since the bonding wires 9 and 10 are covered with the insulating film and do not short-circuit with each other, the bonding wires 9 and 10 between the adjacent bare chip LSI pads 4a and 4b are different from those in the first embodiment. Not only all necessary bare chip LSI pads 4a, 4
It is possible to connect between b with the bonding wire 10. Accordingly, the number of wiring patterns 7, 8 to be provided on the MCM substrate 1, and further the number of signal layers, is further reduced.
MCM can be manufactured at lower cost.

【0038】第1の実施形態と異なり各ボンディングワ
イヤ10の長さを予め設定しておく必要がなくなるた
め、接続を容易に行うことができるようになる。また、
各ベアチップLSIパッド4a,4b間を常に最短距離
で接続できるので、信号の伝搬時間がより短くなる。
Unlike the first embodiment, it is not necessary to set the length of each bonding wire 10 in advance, so that the connection can be easily performed. Also,
Since the bare chip LSI pads 4a and 4b can always be connected with the shortest distance, the signal propagation time is shorter.

【0039】さらに、樹脂によるモールドを行ったとき
各ボンディングワイヤ9,10が押しつぶされて互いに
接触したり、表面層配線パターン7に接触した場合でも
ショートすることがないので、MCM製造時の歩留りが
向上する。
Furthermore, since the bonding wires 9 and 10 are not crushed and contact each other when the resin molding is performed or short-circuited even when the bonding wires 9 and 10 come into contact with the surface layer wiring pattern 7, the yield at the time of manufacturing the MCM is reduced. improves.

【0040】なお、図7に示されるようにMCM基板1
に3つのベアチップLSI3a〜3cを実装した場合で
も、直接接続する必要のある全てのベアチップLSIパ
ッド4a〜4c間をボンディングワイヤ10により接続
することができる。この場合、一つのベアチップLSI
パッド4a〜4cを異なる二つ以上のベアチップLSI
パッド4a〜4cに接続するようにしてもよい。以下、
ベアチップLSIが3つより多い場合でも同様に任意の
ベアチップLSIパッド間について直接接続することが
できる。
Note that, as shown in FIG.
Even if three bare chip LSIs 3a to 3c are mounted on the semiconductor chip, all the bare chip LSI pads 4a to 4c that need to be directly connected can be connected by the bonding wires 10. In this case, one bare chip LSI
Two or more bare chip LSIs with different pads 4a to 4c
You may make it connect to the pads 4a-4c. Less than,
Even when there are more than three bare chip LSIs, it is possible to directly connect any bare chip LSI pads.

【0041】[0041]

【発明の効果】以上説明したように本発明によれば、半
導体チップ相互間をボンディングワイヤなどにより直接
接続するので、基板に設けるべき配線パターンの数が少
なくなり、少ない信号層数で高速処理が可能な半導体チ
ップモジュールを提供することができる。
As described above, according to the present invention, since the semiconductor chips are directly connected to each other by bonding wires or the like, the number of wiring patterns to be provided on the substrate is reduced, and high-speed processing can be performed with a small number of signal layers. A possible semiconductor chip module can be provided.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の第1の実施形態に係るMCMの概略構
成を示す図
FIG. 1 is a diagram showing a schematic configuration of an MCM according to a first embodiment of the present invention;

【図2】同実施形態においてモールドされたMCMの断
面を示す図
FIG. 2 is a diagram showing a cross section of the MCM molded in the same embodiment.

【図3】同実施形態における別のMCMの概略構成を示
す図
FIG. 3 is a diagram showing a schematic configuration of another MCM in the embodiment.

【図4】本発明の第2の実施形態に係るMCMの概略構
成を示す図
FIG. 4 is a diagram showing a schematic configuration of an MCM according to a second embodiment of the present invention;

【図5】同実施形態におけるボンディングワイヤの断面
を示す図
FIG. 5 is a view showing a cross section of the bonding wire in the embodiment.

【図6】同実施形態におけるボンディングワイヤの接続
面を拡大して示す断面図
FIG. 6 is an enlarged sectional view showing a connection surface of a bonding wire according to the embodiment;

【図7】同実施形態における別のMCMの概略構成を示
す図
FIG. 7 is a diagram showing a schematic configuration of another MCM in the embodiment.

【図8】従来のMCMの概略構成を示す図FIG. 8 is a diagram showing a schematic configuration of a conventional MCM.

【符号の説明】 1…MCM基板 2…MCM基板パッド 3a,3b,3c…ベアチップLSI 4a,4b,4c…ベアチップLSIパッド 5…ボンディングワイヤ 6…ボンディングワイヤ 7…表面層配線パターン 8…内層配線パターン 9…ボンディングワイヤ 10…ボンディングワイヤ 11…交差部分 21…樹脂 22…絶縁層 31…ワイヤ本体 32…絶縁皮膜 33…塑性ボール 101…MCM基板 102…MCM基板パッド 103a,103b…ベアチップLSI 104a,b…ベアチップLSIパッド 105…ボンディングワイヤ 106…表面層配線パターン 107…内層配線パターン[Description of Signs] 1 ... MCM board 2 ... MCM board pad 3a, 3b, 3c ... Bare chip LSI 4a, 4b, 4c ... Bear chip LSI pad 5 ... Bonding wire 6 ... Bonding wire 7 ... Surface layer wiring pattern 8 ... Inner layer wiring pattern 9 bonding wire 10 bonding wire 11 crossing 21 resin 22 insulating layer 31 wire body 32 insulating film 33 plastic ball 101 MCM substrate 102 MCM substrate pad 103a, 103b bare chip LSI 104a, b ... Bare chip LSI pad 105 ... bonding wire 106 ... surface layer wiring pattern 107 ... inner layer wiring pattern

Claims (8)

【特許請求の範囲】[Claims] 【請求項1】表面および内層にそれぞれ所定の配線パタ
ーンが形成され、該表面の所定面部に複数のチップ実装
部を有し、そのチップ実装部の周部に前記配線パターン
に接続された複数の電極を設けてなる基板と、 この基板上の複数のチップ実装部にそれぞれ実装され、
表面に複数の電極をそれぞれ備えた複数の半導体チップ
と、 これら複数の半導体チップ相互間において予め定められ
た前記複数の電極をそれぞれ接続する複数の第1の接続
手段と、 予め定められた前記基板上の複数の電極と前記半導体チ
ップ上の複数の電極とをそれぞれ接続する複数の第2の
接続手段とを具備したことを特徴とする半導体チップモ
ジュール。
A predetermined wiring pattern is formed on a surface and an inner layer, and a plurality of chip mounting portions are provided on a predetermined surface portion of the surface, and a plurality of chip mounting portions connected to the wiring pattern are provided on a periphery of the chip mounting portion. A substrate on which electrodes are provided, and mounted on a plurality of chip mounting portions on the substrate,
A plurality of semiconductor chips each having a plurality of electrodes on a surface thereof; a plurality of first connection means respectively connecting the plurality of predetermined electrodes between the plurality of semiconductor chips; a predetermined substrate A semiconductor chip module, comprising: a plurality of second connection means for respectively connecting the plurality of electrodes on the semiconductor chip and the plurality of electrodes on the semiconductor chip.
【請求項2】表面および内層に所定の配線パターンがそ
れぞれ形成され、該表面の所定面部に複数のチップ実装
部を有し、そのチップ実装部の周部に前記配線パターン
に接続された複数の電極を設けてなる基板と、 この基板上の複数のチップ実装部にそれぞれ実装され、
表面に複数の電極をそれぞれ備えた複数の半導体チップ
と、 導体本体およびこの導体本体を覆う絶縁被覆からなり、
前記複数の半導体チップ相互間において予め定められた
前記複数の電極をそれぞれ接続する複数の第1の接続手
段と、 導体本体およびこの導体本体を覆う絶縁被覆からなり、
予め定められた前記基板上の複数の電極と前記半導体チ
ップ上の複数の電極とをそれぞれ接続する複数の第2の
接続手段とを具備したことを特徴とする半導体チップモ
ジュール。
A predetermined wiring pattern formed on the surface and the inner layer, a plurality of chip mounting portions on a predetermined surface portion of the surface, and a plurality of chip mounting portions connected to the wiring pattern on the periphery of the chip mounting portion; A substrate on which electrodes are provided, and mounted on a plurality of chip mounting portions on the substrate,
A plurality of semiconductor chips each having a plurality of electrodes on the surface, a conductor body and an insulating coating covering the conductor body,
A plurality of first connection means for respectively connecting the plurality of predetermined electrodes between the plurality of semiconductor chips, a conductor body and an insulating coating covering the conductor body;
A semiconductor chip module comprising: a plurality of second connection means for respectively connecting a plurality of predetermined electrodes on the substrate and a plurality of electrodes on the semiconductor chip.
【請求項3】前記複数の第1の接続手段は、前記基板上
で隣合う前記チップ実装部にそれぞれ実装された前記半
導体チップ相互間において隣接する電極同士をそれぞれ
接続することを特徴とする請求項1および2に記載の半
導体チップモジュール。
3. The semiconductor device according to claim 2, wherein the plurality of first connection means respectively connect adjacent electrodes between the semiconductor chips mounted on the adjacent chip mounting portions on the substrate. Item 3. The semiconductor chip module according to item 1 or 2.
【請求項4】前記複数の第1の接続手段は、前記基板の
表面に形成された配線パターンにおける配線経路と立体
的に交差するように接続されることを特徴とする請求項
1および2に記載の半導体チップモジュール。
4. The apparatus according to claim 1, wherein said plurality of first connection means are connected so as to three-dimensionally intersect a wiring path in a wiring pattern formed on a surface of said substrate. The semiconductor chip module according to the above.
【請求項5】表面および内層に所定の配線パターンがそ
れぞれ形成され、該表面の所定面部に複数のチップ実装
部を有し、そのチップ実装部の周部に前記配線パターン
に接続された複数のパッドを設けてなる基板と、 この基板上の複数のチップ実装部にそれぞれ実装され、
表面に複数のパッドをそれぞれ備えた複数のベアチップ
LSIと、 前記基板上で隣合う前記チップ実装部にそれぞれ実装さ
れた前記ベアチップLSI相互間において隣接するパッ
ド同士をそれぞれ接続する複数の第1のボンディングワ
イヤと、 予め定められた前記基板上の複数のパッドと前記ベアチ
ップLSI上の複数のパッドとをそれぞれ接続する複数
の第2のボンディングワイヤとを具備したことを特徴と
するマルチチップモジュール。
5. A predetermined wiring pattern is formed on the surface and the inner layer, and a plurality of chip mounting portions are provided on a predetermined surface portion of the surface, and a plurality of chip mounting portions connected to the wiring pattern are provided around the chip mounting portion. A substrate provided with pads and mounted on a plurality of chip mounting portions on the substrate,
A plurality of bare chips LSI each having a plurality of pads on the surface thereof; and a plurality of first bondings respectively connecting adjacent pads between the bare chip LSIs respectively mounted on the chip mounting portions adjacent to each other on the substrate. A multi-chip module comprising: a wire; and a plurality of second bonding wires that respectively connect a plurality of predetermined pads on the substrate and a plurality of pads on the bare chip LSI.
【請求項6】表面および内層に所定の配線パターンがそ
れぞれ形成され、該表面の所定面部に複数のチップ実装
部を有し、そのチップ実装部の周部に前記配線パターン
に接続された複数のパッドを設けてなる基板と、 この基板上の複数のチップ実装部にそれぞれ実装され、
表面に複数のパッドをそれぞれ備えた複数のベアチップ
LSIと、 ワイヤ本体およびこのワイヤ本体を覆う絶縁被覆からな
り、前記複数のベアチップLSI相互間において予め定
められた前記複数のパッドをそれぞれ接続する複数の第
1のボンディングワイヤと、 ワイヤ本体およびこのワイヤ本体を覆う絶縁被覆からな
り、予め定められた前記基板上の複数のパッドと前記ベ
アチップLSI上の複数のパッドとをそれぞれ接続する
複数の第2のボンディングワイヤとを具備したことを特
徴とするマルチチップモジュール。
6. A predetermined wiring pattern is formed on a surface and an inner layer, and a plurality of chip mounting portions are provided on a predetermined surface portion of the surface, and a plurality of chip mounting portions connected to the wiring pattern are provided around the chip mounting portion. A substrate provided with pads and mounted on a plurality of chip mounting portions on the substrate,
A plurality of bare chip LSIs each having a plurality of pads on the surface thereof; a plurality of wire bodies each comprising a wire body and an insulating coating covering the wire body, each of which connects the plurality of predetermined pads between the plurality of bare chip LSIs; A first bonding wire, a wire body, and a plurality of second wires, each of which comprises a plurality of pads on the substrate and a plurality of pads on the bare chip LSI, each of which is composed of a wire body and an insulating coating covering the wire body. A multi-chip module comprising a bonding wire.
【請求項7】表面および内層にそれぞれ所定の配線パタ
ーンが形成され、該表面の所定面部に複数のチップ実装
部を有し、そのチップ実装部の周部に前記配線パターン
に接続された複数の電極を設けてなる基板と、 この基板上の複数のチップ実装部にそれぞれ実装され、
表面に複数の電極をそれぞれ備えた複数の半導体チップ
と、 これら複数の半導体チップ相互間において予め定められ
た前記複数の電極をそれぞれ接続する複数の第1の接続
手段と、 予め定められた前記基板上の複数の電極と前記半導体チ
ップ上の複数の電極とをそれぞれ接続する複数の第2の
接続手段とを具備した半導体チップモジュールを構成要
素として有することを特徴とする電子機器。
7. A predetermined wiring pattern is formed on each of a surface and an inner layer, and a plurality of chip mounting portions are provided on a predetermined surface portion of the surface, and a plurality of chip mounting portions connected to the wiring pattern are provided on the periphery of the chip mounting portion. A substrate on which electrodes are provided, and mounted on a plurality of chip mounting portions on the substrate,
A plurality of semiconductor chips each having a plurality of electrodes on a surface thereof; a plurality of first connection means respectively connecting the plurality of predetermined electrodes between the plurality of semiconductor chips; a predetermined substrate An electronic device comprising, as constituent elements, a semiconductor chip module including a plurality of upper electrodes and a plurality of second connection means for respectively connecting a plurality of electrodes on the semiconductor chip.
【請求項8】表面および内層に所定の配線パターンがそ
れぞれ形成され、該表面の所定面部に複数のチップ実装
部を有し、そのチップ実装部の周部に前記配線パターン
に接続された複数の電極を設けてなる基板と、 この基板上の複数のチップ実装部にそれぞれ実装され、
表面に複数の電極をそれぞれ備えた複数の半導体チップ
と、 導体本体およびこの導体本体を覆う絶縁被覆からなり、
前記複数の半導体チップ相互間において予め定められた
前記複数の電極をそれぞれ接続する複数の第1の接続手
段と、 導体本体およびこの導体本体を覆う絶縁被覆からなり、
予め定められた前記基板上の複数の電極と前記半導体チ
ップ上の複数の電極とをそれぞれ接続する複数の第2の
接続手段とを具備した半導体チップモジュールを構成要
素として有することを特徴とする電子機器。
8. A predetermined wiring pattern is formed on a surface and an inner layer, respectively, and a plurality of chip mounting portions are provided on a predetermined surface portion of the surface, and a plurality of chip mounting portions connected to the wiring pattern are provided around the chip mounting portion. A substrate on which electrodes are provided, and mounted on a plurality of chip mounting portions on the substrate,
A plurality of semiconductor chips each having a plurality of electrodes on the surface, a conductor body and an insulating coating covering the conductor body,
A plurality of first connection means for respectively connecting the plurality of predetermined electrodes between the plurality of semiconductor chips, a conductor body and an insulating coating covering the conductor body;
An electronic device comprising, as a constituent element, a semiconductor chip module including a plurality of second connection means for connecting a plurality of predetermined electrodes on the substrate and a plurality of electrodes on the semiconductor chip, respectively. machine.
JP24506196A 1996-09-17 1996-09-17 Semiconductor chip module, multi-chip module and electronic device Pending JPH1093009A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24506196A JPH1093009A (en) 1996-09-17 1996-09-17 Semiconductor chip module, multi-chip module and electronic device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24506196A JPH1093009A (en) 1996-09-17 1996-09-17 Semiconductor chip module, multi-chip module and electronic device

Publications (1)

Publication Number Publication Date
JPH1093009A true JPH1093009A (en) 1998-04-10

Family

ID=17128014

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24506196A Pending JPH1093009A (en) 1996-09-17 1996-09-17 Semiconductor chip module, multi-chip module and electronic device

Country Status (1)

Country Link
JP (1) JPH1093009A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007524987A (en) * 2003-02-20 2007-08-30 フリースケール セミコンダクター インコーポレイテッド Wire bonding of insulated wires
WO2008156008A1 (en) 2007-06-19 2008-12-24 Alps Electric Co., Ltd. Magnetic detecting device, method for manufacturing magnetic detecting device, and angle detecting device, position detecting device and magnetic switch using the magnetic detecting device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007524987A (en) * 2003-02-20 2007-08-30 フリースケール セミコンダクター インコーポレイテッド Wire bonding of insulated wires
WO2008156008A1 (en) 2007-06-19 2008-12-24 Alps Electric Co., Ltd. Magnetic detecting device, method for manufacturing magnetic detecting device, and angle detecting device, position detecting device and magnetic switch using the magnetic detecting device

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