JPH1074864A - Manufacture of dbc board - Google Patents
Manufacture of dbc boardInfo
- Publication number
- JPH1074864A JPH1074864A JP8249153A JP24915396A JPH1074864A JP H1074864 A JPH1074864 A JP H1074864A JP 8249153 A JP8249153 A JP 8249153A JP 24915396 A JP24915396 A JP 24915396A JP H1074864 A JPH1074864 A JP H1074864A
- Authority
- JP
- Japan
- Prior art keywords
- resin
- dbc
- temperature
- plate
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
Landscapes
- Ceramic Products (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明はDBC基板の製造方
法に関し、より詳細には高速、大電力スイッチングモジ
ュール用基板等として使用されるDBC(Direct Bondi
ng Copper )基板の製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a DBC substrate, and more particularly, to a DBC (Direct Bondi) used as a substrate for high-speed, high-power switching modules.
ng Copper) substrate.
【0002】[0002]
【従来の技術】DBC基板はGTR(Giant Transisto
r)やIGBT(Insulated Gate Bipolar Transistor
)等の高速、大電力スイッチングモジュール用基板と
して用いられ、例えば図3に示した構造を有している。2. Description of the Related Art A DBC substrate is a GTR (Giant Transistor).
r) and IGBT (Insulated Gate Bipolar Transistor)
) Is used as a substrate for a high-speed, high-power switching module, and has, for example, the structure shown in FIG.
【0003】図中、20はアルミナ等からなるセラミッ
ク基板を示しており、セラミック基板20の上面にはS
iチップ22搭載用及び配線用として使用されるCu板
21が接合され、セラミック基板20の下面には熱拡散
用及び反り防止用として使用されるCu板25が接合さ
れている。Cu板21の上面中央部にはSiチップ22
がはんだ層23を介して接着され、Cu板21の配線部
21aとSiチップ22の接続パッド(図示せず)とは
ワイヤ24を用いたワイヤボンディングにより接続され
ている。Cu板25の下面にははんだ層26を介してヒ
ートシンクとしてのCu板27が接着されている。In FIG. 1, reference numeral 20 denotes a ceramic substrate made of alumina or the like.
A Cu plate 21 used for mounting the i-chip 22 and for wiring is joined, and a Cu plate 25 used for heat diffusion and for preventing warpage is joined to the lower surface of the ceramic substrate 20. A Si chip 22 is provided at the center of the upper surface of the Cu plate 21.
Are bonded via a solder layer 23, and the wiring portions 21 a of the Cu plate 21 and connection pads (not shown) of the Si chip 22 are connected by wire bonding using wires 24. A Cu plate 27 as a heat sink is bonded to the lower surface of the Cu plate 25 via a solder layer 26.
【0004】セラミック基板20にCu板21、Cu板
25を接合させる際には、OFC(Oxygen Free Coppe
r)状態のCu板21、Cu板25に大気中、300℃
程度の温度で予備酸化処理を施して、その表面にCu2
O層を形成しておき、その後図4に示したようにMo板
31とMoメッシュ32とからなる治具30の上にセラ
ミック基板20とCu板21、Cu板25とを合わせて
載置し、治具30を金属製のベルト33にセットする。
そして図4に示した状態で治具30をDBC接合炉に通
し、1100℃程度の温度で加熱処理を施し、Cu板2
1、Cu板25中に含まれる酸素を介してCu板21、
Cu板25をセラミック基板20に接合させる。When the Cu plate 21 and the Cu plate 25 are joined to the ceramic substrate 20, an OFC (Oxygen Free Coppe
r) The Cu plate 21 and the Cu plate 25 in the state are set at 300 ° C. in the air.
Subjected to pre-oxidation treatment at a degree of temperature, Cu 2 on the surface thereof
After the O layer is formed, the ceramic substrate 20, the Cu plate 21, and the Cu plate 25 are placed together on a jig 30 including a Mo plate 31 and a Mo mesh 32 as shown in FIG. Then, the jig 30 is set on the metal belt 33.
Then, the jig 30 is passed through a DBC joining furnace in the state shown in FIG. 4 and subjected to a heat treatment at a temperature of about 1100 ° C.
1. Cu plate 21 via oxygen contained in Cu plate 25,
The Cu plate 25 is joined to the ceramic substrate 20.
【0005】[0005]
【発明が解決しようとする課題】セラミック基板20と
Cu板21、Cu板25とを接合させるために治具30
を前記DBC接合炉に通す際、Moメッシュ32も酸化
され、あるいはCu板25からCu2 Oが付着したりす
る。そしてこの状態が進行すると、加熱処理中にMoメ
ッシュ32とCu板25とが反応してしまい、Cu板2
5のMoメッシュ32との接触面側に図5に示すような
メッシュ痕25aが生じ、不良品となってしまう。その
ため、現状ではMoメッシュ32の連続使用回数に制限
を設け、その回数を超えるとMoメッシュ32に還元雰
囲気中、Cuの融点以上の加熱処理を施し、Moメッシ
ュ32の還元及びCu2 Oの除去を行っている。A jig 30 for joining the ceramic substrate 20 to the Cu plate 21 and the Cu plate 25 is provided.
Is passed through the DBC bonding furnace, the Mo mesh 32 is also oxidized, or Cu 2 O adheres from the Cu plate 25. When this state progresses, the Mo mesh 32 and the Cu plate 25 react during the heat treatment, and the Cu plate 2
5, a mesh mark 25a as shown in FIG. 5 is formed on the contact surface side with the Mo mesh 32, resulting in a defective product. Therefore, at present, the number of continuous uses of the Mo mesh 32 is limited, and when the number of times is exceeded, the Mo mesh 32 is subjected to a heat treatment in a reducing atmosphere at a temperature equal to or higher than the melting point of Cu to reduce the Mo mesh 32 and remove Cu 2 O. It is carried out.
【0006】しかし、この除去作業が面倒で製品のコス
トを引き上げる原因となっていた。[0006] However, this removing operation is troublesome and causes an increase in product cost.
【0007】本発明は上記課題に鑑みなされたものであ
って、MoメッシュのCu2 O除去作業を無くし、製品
のコストダウンを図ることができるDBC基板の製造方
法を提供することを目的としている。SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and has as its object to provide a method of manufacturing a DBC substrate that can eliminate the work of removing Cu 2 O from a Mo mesh and reduce the cost of products. .
【0008】[0008]
【課題を解決するための手段】上記目的を達成するため
に、本発明に係るDBC基板の製造方法(1)は、OF
C(Oxygen Free Copper)からなるCu板を予備酸化し
た後、接合炉中でセラミック基板と接合させるDBC
(Direct Bonding Copper )基板の製造方法において、
予備酸化温度を超える温度であって接合温度以下の温度
で分解する樹脂層を、前記Cu板の非接合面に、予備酸
化処理の前に予め形成しておくことをことを特徴として
いる。In order to achieve the above object, a method (1) for manufacturing a DBC substrate according to the present invention comprises the steps of:
DBC for pre-oxidizing a Cu plate made of C (Oxygen Free Copper) and bonding it to a ceramic substrate in a bonding furnace
(Direct Bonding Copper)
It is characterized in that a resin layer that decomposes at a temperature higher than the pre-oxidation temperature but not higher than the bonding temperature is formed in advance on the non-bonding surface of the Cu plate before the pre-oxidation treatment.
【0009】上記DBC基板の製造方法(1)によれ
ば、Cu板の予備酸化処理時には、前記Cu板の非接合
面、すなわちDBC接合処理時のMoメッシュとの接触
面には前記樹脂層が形成されており、前記非接合面が酸
化されることはない。そしてDBC接合処理時に前記樹
脂層は分解・消失してしまう。従って前記Cu板とMo
メッシュとの間で酸素を介した反応が生ずることはな
く、MoメッシュにCu2Oが付着することはない。こ
のためMoメッシュを連続使用しても前記Cu板のMo
メッシュとの接触面側にメッシュ痕が生じてしまい、不
良品が生産されるといったことはなくなる。また、Mo
メッシュのCu2 O除去作業をなくすことができ、製品
のコストを引き下げることができる。According to the DBC substrate manufacturing method (1), the resin layer is formed on the non-joining surface of the Cu plate during the preliminary oxidation treatment of the Cu plate, that is, the contact surface with the Mo mesh at the time of the DBC joining treatment. And the non-bonded surface is not oxidized. The resin layer is decomposed and disappears during the DBC bonding process. Therefore, the Cu plate and Mo
There is no reaction via oxygen with the mesh, and Cu 2 O does not adhere to the Mo mesh. Therefore, even if the Mo mesh is used continuously, the Mo
Mesh marks are formed on the side of the contact surface with the mesh, so that defective products are not produced. Also, Mo
The operation of removing Cu 2 O from the mesh can be eliminated, and the cost of the product can be reduced.
【0010】また、本発明に係るDBC基板の製造方法
(2)は、上記DBC基板の製造方法(1)において、
前記樹脂がアクリル樹脂、ポリブテン樹脂、あるいはポ
リエーテル樹脂であることを特徴としている。Further, the method (2) for manufacturing a DBC substrate according to the present invention is the same as the method (1) for manufacturing a DBC substrate,
The resin is an acrylic resin, a polybutene resin, or a polyether resin.
【0011】上記DBC基板の製造方法(2)によれ
ば、予備酸化温度では分解せず、DBC接合温度では分
解・消失する樹脂層を容易に形成することができる。According to the DBC substrate manufacturing method (2), a resin layer that does not decompose at the preliminary oxidation temperature and decomposes and disappears at the DBC junction temperature can be easily formed.
【0012】また、本発明に係るDBC基板の製造方法
(3)は、上記DBC基板の製造方法(1)又は(2)
において、前記樹脂の分解温度が250〜400℃の範
囲にあることを特徴としている。The method (3) for manufacturing a DBC substrate according to the present invention includes the method (1) or (2) for manufacturing a DBC substrate.
, Wherein the decomposition temperature of the resin is in the range of 250 to 400 ° C.
【0013】上記DBC基板の製造方法(3)によれ
ば、通常行われる予備酸化処理時には分解せず、DBC
接合処理時には確実に分解・消失する樹脂層を形成する
ことができる。According to the DBC substrate manufacturing method (3), the DBC substrate is not decomposed during the normal pre-oxidation treatment, and the DBC substrate is not decomposed.
During the bonding process, a resin layer that decomposes and disappears can be reliably formed.
【0014】また、本発明に係るDBC基板の製造方法
(4)は、上記DBC基板の製造方法(1)〜(3)の
いずれかにおいて、前記樹脂の分子量が6万〜120万
の範囲にあることを特徴としている。The method for manufacturing a DBC substrate (4) according to the present invention is the method for manufacturing a DBC substrate according to any one of the above-described methods (1) to (3), wherein the molecular weight of the resin is in the range of 60,000 to 1.2 million. It is characterized by having.
【0015】上記DBC基板の製造方法(4)によれ
ば、前記樹脂を溶媒に溶解させた時の粘度調整も簡単に
行うことができ、前記樹脂層の形成処理が容易となる。According to the DBC substrate manufacturing method (4), the viscosity when the resin is dissolved in a solvent can be easily adjusted, and the resin layer forming process is facilitated.
【0016】また、本発明に係るDBC基板の製造方法
(5)は、上記DBC基板の製造方法(1)において、
前記樹脂がメチルメタクリレートを主成分とし、その
他、メタクリル酸、ブチルメタクリレート、2−ヒドロ
キシメチルメタクリレート、2−ヒドロキシエチルメタ
クリレート、イソプロピルメタクリレート、フェニルメ
タクリレートのうちの少なくとも一種、及びスチレン、
ブタジエンのうちの少なくとも一種を含有する共重合体
からなることを特徴としている。Further, the method (5) for manufacturing a DBC substrate according to the present invention is the same as the method (1) for manufacturing a DBC substrate, except that
The resin is mainly composed of methyl methacrylate, other, methacrylic acid, butyl methacrylate, 2-hydroxymethyl methacrylate, 2-hydroxyethyl methacrylate, isopropyl methacrylate, at least one of phenyl methacrylate, and styrene,
It is characterized by comprising a copolymer containing at least one of butadiene.
【0017】また、本発明に係るDBC基板の製造方法
(6)は、上記DBC基板の製造方法(5)において、
前記樹脂原料における2−ヒドロキシエチルメタクリレ
ート、スチレン、及びブタジエンの合計重量%が20〜
60重量%の範囲にあることを特徴としている。Further, the method of manufacturing a DBC substrate (6) according to the present invention is the same as the method of manufacturing a DBC substrate (5), except that
The total weight% of 2-hydroxyethyl methacrylate, styrene, and butadiene in the resin material is 20 to
It is characterized by being in the range of 60% by weight.
【0018】上記DBC基板の製造方法(5)又は
(6)によれば、予備酸化処理時には分解せず、DBC
接合処理により確実に分解・消失する前記樹脂層を容易
に形成することができる。また、OFCのCu板との密
着性に富み、耐候性、耐摩耗性に優れた樹脂層を形成す
ることができる。According to the DBC substrate manufacturing method (5) or (6), the DBC substrate is not decomposed during the preliminary oxidation treatment, and the DBC substrate is not decomposed.
The resin layer which is surely decomposed and disappears by the bonding process can be easily formed. In addition, a resin layer having excellent adhesion to the Cu plate of the OFC and having excellent weather resistance and wear resistance can be formed.
【0019】[0019]
【発明の実施の形態】以下、本発明の実施の形態に係る
DBC基板の製造方法を説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a method for manufacturing a DBC substrate according to an embodiment of the present invention will be described.
【0020】実施の形態に係るDBC基板の製造方法が
従来のDBC基板の製造方法と相違するのは、OFC・
Cu板の予備酸化処理の前に樹脂層を形成しておく工程
が存在する点であり、その他の工程は従来のDBC基板
の製造方法と同様である。The difference between the method for manufacturing a DBC substrate according to the embodiment and the method for manufacturing a conventional DBC substrate is that
There is a step of forming a resin layer before the preliminary oxidation treatment of the Cu plate, and the other steps are the same as the conventional method of manufacturing a DBC substrate.
【0021】樹脂層形成工程では、Cu板のセラミック
基板との非接合面、すなわちMoメッシュとの接触面に
図1に示したように樹脂層10を形成する。In the resin layer forming step, the resin layer 10 is formed on the non-joining surface of the Cu plate with the ceramic substrate, that is, the contact surface with the Mo mesh as shown in FIG.
【0022】樹脂層10の形成方法としては、樹脂原料
を酢酸エチルや酢酸ブチル等の溶媒に溶かして刷毛を用
いて塗布する方法の他、溶媒に溶かした樹脂溶液をスプ
レー噴霧等により吹き付ける方法もあり、薄く均一に樹
脂層10を形成するためには、前記スプレー噴霧法によ
る方が望ましい。The resin layer 10 may be formed by dissolving the resin material in a solvent such as ethyl acetate or butyl acetate and applying the solution using a brush, or by spraying a resin solution dissolved in the solvent by spraying or the like. In order to form the resin layer 10 thinly and uniformly, it is preferable to use the above-mentioned spraying method.
【0023】通常、OFCからなるCu板の予備酸化処
理は250〜300℃程度の温度で行われ、セラミック
基板と前記Cu板とのDBC接合は1000℃を超える
温度で行われる。Normally, the pre-oxidation treatment of a Cu plate made of OFC is performed at a temperature of about 250 to 300 ° C., and the DBC bonding between the ceramic substrate and the Cu plate is performed at a temperature exceeding 1000 ° C.
【0024】従って前記樹脂は、予備酸化処理時(25
0〜300℃)には分解せず、DBC接合処理時(10
00℃以上)には速やかに分解・消失するものであるこ
とが望ましく、これら条件を満たし、また樹脂溶液とし
た際の取り扱い性、安定性等を考慮すれば、樹脂原料と
してはアクリル樹脂、ポリブテン樹脂、あるいはポリエ
ーテル樹脂等が適している。Therefore, the resin is subjected to a preliminary oxidation treatment (25
(0-300 ° C.) and does not decompose during DBC bonding (10
(00 ° C. or higher), it is desirable that the resin is decomposed and disappears quickly. Considering these conditions and considering the handling properties and stability of the resin solution, the resin raw materials include acrylic resin and polybutene. Resin or polyether resin is suitable.
【0025】また、上記分解・消失温度を考慮すれば、
前記樹脂の分子量は6万〜120万程度のものが好まし
い。In consideration of the above decomposition / dissipation temperature,
The molecular weight of the resin is preferably about 60,000 to 1.2 million.
【0026】特に前記樹脂として、メチルメタクリレー
トを主成分とし、その他、メタクリル酸、ブチルメタク
リレート、2−ヒドロキシメチルメタクリレート、2−
ヒドロキシエチルメタクリレート、イソプロピルメタク
リレート、フェニルメタクリレートのうちの少なくとも
一種、及びスチレン、又はブタジエンのうちの少なくと
も一種を含有する共重合体からなるものが好ましい。Particularly, as the resin, methyl methacrylate is a main component, and methacrylic acid, butyl methacrylate, 2-hydroxymethyl methacrylate,
It is preferable to use a copolymer containing at least one of hydroxyethyl methacrylate, isopropyl methacrylate, and phenyl methacrylate and at least one of styrene and butadiene.
【0027】前記予備酸化温度では分解せず、該予備酸
化温度を超えると速やかに消失する点を考慮すると、上
記樹脂原料の中でも、特に2−ヒドロキシエチルメタク
リレート、及びスチレン又はブタジエンの合計重量%が
20〜60重量%の範囲にあるものが好ましい。In view of the fact that the resin does not decompose at the pre-oxidation temperature and quickly disappears when the temperature exceeds the pre-oxidation temperature, the total weight% of 2-hydroxyethyl methacrylate and styrene or butadiene among the above resin raw materials is particularly high. Those in the range of 20 to 60% by weight are preferred.
【0028】樹脂層10の形成を終えた後、OFCの予
備酸化を大気中、250〜300℃の温度範囲で行な
い、図4に示したようにセラミック基板20とCu板2
1、樹脂層10が形成されたCu板25とを合わせて治
具30上にセットする。After the formation of the resin layer 10 is completed, preliminary oxidation of the OFC is performed in the air at a temperature in the range of 250 to 300 ° C., and as shown in FIG.
1. The jig 30 is set together with the Cu plate 25 on which the resin layer 10 is formed.
【0029】この際樹脂層10は治具30に接するよう
にし、セラミック基板20とCu板25とはCu板25
に形成されたCu2 O層を介して接触させる。At this time, the resin layer 10 is in contact with the jig 30, and the ceramic substrate 20 and the Cu plate 25 are
The contact is made via the Cu 2 O layer formed on the substrate.
【0030】その後治具30を接合炉に搬入してDBC
接合処理を、N2 雰囲気中、1065〜1083℃の温
度範囲で行なう。Thereafter, the jig 30 is carried into the welding furnace and the DBC
The bonding process is performed in an N 2 atmosphere at a temperature range of 1065 to 1083 ° C.
【0031】DBC接合処理を終えたセラミック基板2
0とCu板25とは製品として取り出し、治具30は回
収して連続使用に供する。Ceramic substrate 2 after DBC bonding process
The 0 and the Cu plate 25 are taken out as a product, and the jig 30 is collected and provided for continuous use.
【0032】実施の形態に係るDBC基板の製造方法に
よれば、OFCの予備酸化処理の際、DFCからなるC
u板25の片面(Moメッシュ32側)は樹脂層10で
被覆されており、この片面は酸化されない。従って、そ
の後のDBC接合処理の際に、Moメッシュ32にCu
2 Oが付着することはなく、Cu板25とMoメッシュ
32との反応が進むことはなく、Cu板25にMoメッ
シュ32のメッシュ痕は生じない。このためMoメッシ
ュ32にCu2 Oの除去作業を施す必要がなくなり、コ
ストダウンを図ることができる。According to the method of manufacturing a DBC substrate according to the embodiment, during the preliminary oxidation treatment of the OFC,
One surface (the Mo mesh 32 side) of the u-plate 25 is covered with the resin layer 10, and this one surface is not oxidized. Therefore, at the time of the subsequent DBC bonding process, Cu
2 O does not adhere, the reaction between the Cu plate 25 and the Mo mesh 32 does not proceed, and no mesh mark of the Mo mesh 32 is formed on the Cu plate 25. Therefore, it is not necessary to remove the Cu 2 O from the Mo mesh 32, and the cost can be reduced.
【0033】[0033]
【実施例及び比較例】以下、本発明に係るDBC基板の
製造方法の実施例、及び比較例を説明する。Examples and Comparative Examples Examples and comparative examples of a method for manufacturing a DBC substrate according to the present invention will be described below.
【0034】実施例 (a)樹脂層10の形成材料:アクリル樹脂 分子量:7万 分解温度:320℃(N2 中) 溶剤:酢酸エチル 塗布方法:スプレー噴霧法 (b)予備酸化温度:300℃ 雰囲気:大気 (c)DBC接合処理温度:1075℃ 雰囲気:N2 (d)Cu2 Oの除去作業を行わない治具30の連続使
用回数:8回比較例 樹脂層10の形成を行わない他は、実施例の場合と同様
の条件で行った。 Example (a) Material for forming resin layer 10: acrylic resin Molecular weight: 70,000 Decomposition temperature: 320 ° C. (in N 2 ) Solvent: ethyl acetate Coating method: spray spraying method (b) Pre-oxidation temperature: 300 ° C. Atmosphere: air (c) DBC bonding treatment temperature: 1075 ° C. Atmosphere: N 2 (d) Continuous use number of jigs 30 not performing Cu 2 O removal operation: 8 times Comparative Example Other than not forming resin layer 10 Was performed under the same conditions as in the example.
【0035】評価 連続使用回数に対するメッシュ痕発生率で評価を行な
い、その結果を図2に示した。[0035] subjected to evaluation in meshes flaw generation rate with respect to evaluation of continuous use count, and the results are shown in Figure 2.
【0036】実施例の場合、連続使用8回でもメッシュ
痕不良は発生しなかったが、比較例の場合、連続使用5
回からメッシュ痕不良が発生しだした。In the case of the embodiment, no mesh mark defect occurred even after the continuous use 8 times.
A mesh mark defect began to occur from the second time.
【0037】上記結果から明らかなように、実施例に係
るDBC基板の製造方法によれば、治具30におけるC
u2 O除去作業をなくし、コストダウンを図ることがで
きる。As is clear from the above results, according to the DBC substrate manufacturing method of the embodiment, the C
The operation for removing u 2 O can be eliminated, and the cost can be reduced.
【図1】本発明の実施の形態に係るDBC基板の製造方
法に用いられるCu板に樹脂層が形成されたOFCを示
す側面図である。FIG. 1 is a side view showing an OFC in which a resin layer is formed on a Cu plate used in a method for manufacturing a DBC substrate according to an embodiment of the present invention.
【図2】実施例及び比較例に係る治具の使用回数とCu
板におけるメッシュ痕発生率との関係を示すグラフであ
る。FIG. 2 shows the number of times the jigs according to Examples and Comparative Examples were used and Cu
It is a graph which shows the relationship with the mesh mark generation rate in a board.
【図3】従来のDBC基板の構造を示す側断面図であ
る。FIG. 3 is a side sectional view showing a structure of a conventional DBC substrate.
【図4】接合時における炉への搬入状態を示す側面図で
ある。FIG. 4 is a side view showing a state of being carried into a furnace at the time of joining.
【図5】メッシュ痕が生じたCu板を示す平面図であ
る。FIG. 5 is a plan view showing a Cu plate having mesh marks.
10 樹脂層 20 セラミック基板 21 Cu板(配線用) 25 Cu板(反り防止) 30 治具 Reference Signs List 10 resin layer 20 ceramic substrate 21 Cu plate (for wiring) 25 Cu plate (prevention of warping) 30 jig
Claims (6)
Cu板を予備酸化した後、接合炉中でセラミック基板と
接合させるDBC(Direct Bonding Copper)基板の製
造方法において、予備酸化温度を超える温度であって接
合温度以下の温度で分解する樹脂層を、前記Cu板の非
接合面に、予備酸化処理の前に予め形成しておくことを
特徴とするDBC基板の製造方法。In a method for manufacturing a DBC (Direct Bonding Copper) substrate in which a Cu plate made of OFC (Oxygen Free Copper) is pre-oxidized and then bonded to a ceramic substrate in a bonding furnace, the temperature exceeds a pre-oxidation temperature. A method of forming a resin layer that decomposes at a temperature equal to or lower than a bonding temperature on a non-bonding surface of the Cu plate before the preliminary oxidation treatment.
脂、あるいはポリエーテル樹脂であることを特徴とする
請求項1記載のDBC基板の製造方法。2. The method according to claim 1, wherein the resin is an acrylic resin, a polybutene resin, or a polyether resin.
の範囲にあることを特徴とする請求項1又は請求項2記
載のDBC基板の製造方法。3. The decomposition temperature of the resin is 250 to 400 ° C.
3. The method for manufacturing a DBC substrate according to claim 1 or 2, wherein
囲にあることを特徴とする請求項1〜3のいずれかの項
に記載のDBC基板の製造方法。4. The method for manufacturing a DBC substrate according to claim 1, wherein the resin has a molecular weight in a range of 60,000 to 1,200,000.
分とし、その他、メタクリル酸、ブチルメタクリレー
ト、2−ヒドロキシメチルメタクリレート、2−ヒドロ
キシエチルメタクリレート、イソプロピルメタクリレー
ト、フェニルメタクリレートのうちの少なくとも一種、
及びスチレン、ブタジエンのうちの少なくとも一種を含
有する共重合体からなることを特徴とする請求項1記載
のDBC基板の製造方法。5. The method according to claim 1, wherein the resin is mainly composed of methyl methacrylate, and at least one of methacrylic acid, butyl methacrylate, 2-hydroxymethyl methacrylate, 2-hydroxyethyl methacrylate, isopropyl methacrylate, and phenyl methacrylate.
The method for producing a DBC substrate according to claim 1, comprising a copolymer containing at least one of styrene and butadiene.
チルメタクリレート、スチレン、及びブタジエンの合計
重量%が20〜60重量%の範囲にあることを特徴とす
る請求項5記載のDBC基板の製造方法。6. The method for producing a DBC substrate according to claim 5, wherein the total weight% of 2-hydroxyethyl methacrylate, styrene and butadiene in the resin raw material is in the range of 20 to 60% by weight.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8249153A JPH1074864A (en) | 1996-08-30 | 1996-08-30 | Manufacture of dbc board |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8249153A JPH1074864A (en) | 1996-08-30 | 1996-08-30 | Manufacture of dbc board |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH1074864A true JPH1074864A (en) | 1998-03-17 |
Family
ID=17188701
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8249153A Pending JPH1074864A (en) | 1996-08-30 | 1996-08-30 | Manufacture of dbc board |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH1074864A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012001430A (en) * | 2010-06-14 | 2012-01-05 | Ixys Semiconductor Gmbh | Method for manufacturing double-sided metallized ceramic substrate |
CN113804004A (en) * | 2021-08-12 | 2021-12-17 | 上海富乐华半导体科技有限公司 | Method for improving reliability of surface oxide layer of sintering furnace conveyor belt |
CN115558880A (en) * | 2022-11-30 | 2023-01-03 | 四川富乐华半导体科技有限公司 | Method for oxidizing DCB copper sheet |
-
1996
- 1996-08-30 JP JP8249153A patent/JPH1074864A/en active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012001430A (en) * | 2010-06-14 | 2012-01-05 | Ixys Semiconductor Gmbh | Method for manufacturing double-sided metallized ceramic substrate |
CN113804004A (en) * | 2021-08-12 | 2021-12-17 | 上海富乐华半导体科技有限公司 | Method for improving reliability of surface oxide layer of sintering furnace conveyor belt |
CN113804004B (en) * | 2021-08-12 | 2024-03-19 | 上海富乐华半导体科技有限公司 | Method for improving reliability of oxide layer on surface of conveyor belt of sintering furnace |
CN115558880A (en) * | 2022-11-30 | 2023-01-03 | 四川富乐华半导体科技有限公司 | Method for oxidizing DCB copper sheet |
CN115558880B (en) * | 2022-11-30 | 2023-03-03 | 四川富乐华半导体科技有限公司 | Method for oxidizing DCB copper sheet |
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