JPH1074864A - Manufacture of dbc board - Google Patents
Manufacture of dbc boardInfo
- Publication number
- JPH1074864A JPH1074864A JP8249153A JP24915396A JPH1074864A JP H1074864 A JPH1074864 A JP H1074864A JP 8249153 A JP8249153 A JP 8249153A JP 24915396 A JP24915396 A JP 24915396A JP H1074864 A JPH1074864 A JP H1074864A
- Authority
- JP
- Japan
- Prior art keywords
- resin
- dbc
- temperature
- plate
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
Landscapes
- Ceramic Products (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明はＤＢＣ基板の製造方
法に関し、より詳細には高速、大電力スイッチングモジ
ュール用基板等として使用されるＤＢＣ（Direct Bondi
ng Copper ）基板の製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a DBC substrate, and more particularly, to a DBC (Direct Bondi) used as a substrate for high-speed, high-power switching modules.
ng Copper) substrate.
【０００２】[0002]
【従来の技術】ＤＢＣ基板はＧＴＲ（Giant Transisto
r）やＩＧＢＴ（Insulated Gate Bipolar Transistor
）等の高速、大電力スイッチングモジュール用基板と
して用いられ、例えば図３に示した構造を有している。2. Description of the Related Art A DBC substrate is a GTR (Giant Transistor).
r) and IGBT (Insulated Gate Bipolar Transistor)
) Is used as a substrate for a high-speed, high-power switching module, and has, for example, the structure shown in FIG.
【０００３】図中、２０はアルミナ等からなるセラミッ
ク基板を示しており、セラミック基板２０の上面にはＳ
ｉチップ２２搭載用及び配線用として使用されるＣｕ板
２１が接合され、セラミック基板２０の下面には熱拡散
用及び反り防止用として使用されるＣｕ板２５が接合さ
れている。Ｃｕ板２１の上面中央部にはＳｉチップ２２
がはんだ層２３を介して接着され、Ｃｕ板２１の配線部
２１ａとＳｉチップ２２の接続パッド（図示せず）とは
ワイヤ２４を用いたワイヤボンディングにより接続され
ている。Ｃｕ板２５の下面にははんだ層２６を介してヒ
ートシンクとしてのＣｕ板２７が接着されている。In FIG. 1, reference numeral 20 denotes a ceramic substrate made of alumina or the like.
A Cu plate 21 used for mounting the i-chip 22 and for wiring is joined, and a Cu plate 25 used for heat diffusion and for preventing warpage is joined to the lower surface of the ceramic substrate 20. A Si chip 22 is provided at the center of the upper surface of the Cu plate 21.
Are bonded via a solder layer 23, and the wiring portions 21 a of the Cu plate 21 and connection pads (not shown) of the Si chip 22 are connected by wire bonding using wires 24. A Cu plate 27 as a heat sink is bonded to the lower surface of the Cu plate 25 via a solder layer 26.
【０００４】セラミック基板２０にＣｕ板２１、Ｃｕ板
２５を接合させる際には、ＯＦＣ（Oxygen Free Coppe
r）状態のＣｕ板２１、Ｃｕ板２５に大気中、３００℃
程度の温度で予備酸化処理を施して、その表面にＣｕ2
Ｏ層を形成しておき、その後図４に示したようにＭｏ板
３１とＭｏメッシュ３２とからなる治具３０の上にセラ
ミック基板２０とＣｕ板２１、Ｃｕ板２５とを合わせて
載置し、治具３０を金属製のベルト３３にセットする。
そして図４に示した状態で治具３０をＤＢＣ接合炉に通
し、１１００℃程度の温度で加熱処理を施し、Ｃｕ板２
１、Ｃｕ板２５中に含まれる酸素を介してＣｕ板２１、
Ｃｕ板２５をセラミック基板２０に接合させる。When the Cu plate 21 and the Cu plate 25 are joined to the ceramic substrate 20, an OFC (Oxygen Free Coppe
r) The Cu plate 21 and the Cu plate 25 in the state are set at 300 ° C. in the air.
Subjected to pre-oxidation treatment at a degree of temperature, Cu 2 on the surface thereof
After the O layer is formed, the ceramic substrate 20, the Cu plate 21, and the Cu plate 25 are placed together on a jig 30 including a Mo plate 31 and a Mo mesh 32 as shown in FIG. Then, the jig 30 is set on the metal belt 33.
Then, the jig 30 is passed through a DBC joining furnace in the state shown in FIG. 4 and subjected to a heat treatment at a temperature of about 1100 ° C.
1. Cu plate 21 via oxygen contained in Cu plate 25,
The Cu plate 25 is joined to the ceramic substrate 20.
【０００５】[0005]
【発明が解決しようとする課題】セラミック基板２０と
Ｃｕ板２１、Ｃｕ板２５とを接合させるために治具３０
を前記ＤＢＣ接合炉に通す際、Ｍｏメッシュ３２も酸化
され、あるいはＣｕ板２５からＣｕ2 Ｏが付着したりす
る。そしてこの状態が進行すると、加熱処理中にＭｏメ
ッシュ３２とＣｕ板２５とが反応してしまい、Ｃｕ板２
５のＭｏメッシュ３２との接触面側に図５に示すような
メッシュ痕２５ａが生じ、不良品となってしまう。その
ため、現状ではＭｏメッシュ３２の連続使用回数に制限
を設け、その回数を超えるとＭｏメッシュ３２に還元雰
囲気中、Ｃｕの融点以上の加熱処理を施し、Ｍｏメッシ
ュ３２の還元及びＣｕ2 Ｏの除去を行っている。A jig 30 for joining the ceramic substrate 20 to the Cu plate 21 and the Cu plate 25 is provided.
Is passed through the DBC bonding furnace, the Mo mesh 32 is also oxidized, or Cu 2 O adheres from the Cu plate 25. When this state progresses, the Mo mesh 32 and the Cu plate 25 react during the heat treatment, and the Cu plate 2
5, a mesh mark 25a as shown in FIG. 5 is formed on the contact surface side with the Mo mesh 32, resulting in a defective product. Therefore, at present, the number of continuous uses of the Mo mesh 32 is limited, and when the number of times is exceeded, the Mo mesh 32 is subjected to a heat treatment in a reducing atmosphere at a temperature equal to or higher than the melting point of Cu to reduce the Mo mesh 32 and remove Cu 2 O. It is carried out.
【０００６】しかし、この除去作業が面倒で製品のコス
トを引き上げる原因となっていた。[0006] However, this removing operation is troublesome and causes an increase in product cost.
【０００７】本発明は上記課題に鑑みなされたものであ
って、ＭｏメッシュのＣｕ2 Ｏ除去作業を無くし、製品
のコストダウンを図ることができるＤＢＣ基板の製造方
法を提供することを目的としている。SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and has as its object to provide a method of manufacturing a DBC substrate that can eliminate the work of removing Cu 2 O from a Mo mesh and reduce the cost of products. .
【０００８】[0008]
【課題を解決するための手段】上記目的を達成するため
に、本発明に係るＤＢＣ基板の製造方法（１）は、ＯＦ
Ｃ（Oxygen Free Copper）からなるＣｕ板を予備酸化し
た後、接合炉中でセラミック基板と接合させるＤＢＣ
（Direct Bonding Copper ）基板の製造方法において、
予備酸化温度を超える温度であって接合温度以下の温度
で分解する樹脂層を、前記Ｃｕ板の非接合面に、予備酸
化処理の前に予め形成しておくことをことを特徴として
いる。In order to achieve the above object, a method (1) for manufacturing a DBC substrate according to the present invention comprises the steps of:
DBC for pre-oxidizing a Cu plate made of C (Oxygen Free Copper) and bonding it to a ceramic substrate in a bonding furnace
(Direct Bonding Copper)
It is characterized in that a resin layer that decomposes at a temperature higher than the pre-oxidation temperature but not higher than the bonding temperature is formed in advance on the non-bonding surface of the Cu plate before the pre-oxidation treatment.
【０００９】上記ＤＢＣ基板の製造方法（１）によれ
ば、Ｃｕ板の予備酸化処理時には、前記Ｃｕ板の非接合
面、すなわちＤＢＣ接合処理時のＭｏメッシュとの接触
面には前記樹脂層が形成されており、前記非接合面が酸
化されることはない。そしてＤＢＣ接合処理時に前記樹
脂層は分解・消失してしまう。従って前記Ｃｕ板とＭｏ
メッシュとの間で酸素を介した反応が生ずることはな
く、ＭｏメッシュにＣｕ2Ｏが付着することはない。こ
のためＭｏメッシュを連続使用しても前記Ｃｕ板のＭｏ
メッシュとの接触面側にメッシュ痕が生じてしまい、不
良品が生産されるといったことはなくなる。また、Ｍｏ
メッシュのＣｕ2 Ｏ除去作業をなくすことができ、製品
のコストを引き下げることができる。According to the DBC substrate manufacturing method (1), the resin layer is formed on the non-joining surface of the Cu plate during the preliminary oxidation treatment of the Cu plate, that is, the contact surface with the Mo mesh at the time of the DBC joining treatment. And the non-bonded surface is not oxidized. The resin layer is decomposed and disappears during the DBC bonding process. Therefore, the Cu plate and Mo
There is no reaction via oxygen with the mesh, and Cu 2 O does not adhere to the Mo mesh. Therefore, even if the Mo mesh is used continuously, the Mo
Mesh marks are formed on the side of the contact surface with the mesh, so that defective products are not produced. Also, Mo
The operation of removing Cu 2 O from the mesh can be eliminated, and the cost of the product can be reduced.
【００１０】また、本発明に係るＤＢＣ基板の製造方法
（２）は、上記ＤＢＣ基板の製造方法（１）において、
前記樹脂がアクリル樹脂、ポリブテン樹脂、あるいはポ
リエーテル樹脂であることを特徴としている。Further, the method (2) for manufacturing a DBC substrate according to the present invention is the same as the method (1) for manufacturing a DBC substrate,
The resin is an acrylic resin, a polybutene resin, or a polyether resin.
【００１１】上記ＤＢＣ基板の製造方法（２）によれ
ば、予備酸化温度では分解せず、ＤＢＣ接合温度では分
解・消失する樹脂層を容易に形成することができる。According to the DBC substrate manufacturing method (2), a resin layer that does not decompose at the preliminary oxidation temperature and decomposes and disappears at the DBC junction temperature can be easily formed.
【００１２】また、本発明に係るＤＢＣ基板の製造方法
（３）は、上記ＤＢＣ基板の製造方法（１）又は（２）
において、前記樹脂の分解温度が２５０〜４００℃の範
囲にあることを特徴としている。The method (3) for manufacturing a DBC substrate according to the present invention includes the method (1) or (2) for manufacturing a DBC substrate.
, Wherein the decomposition temperature of the resin is in the range of 250 to 400 ° C.
【００１３】上記ＤＢＣ基板の製造方法（３）によれ
ば、通常行われる予備酸化処理時には分解せず、ＤＢＣ
接合処理時には確実に分解・消失する樹脂層を形成する
ことができる。According to the DBC substrate manufacturing method (3), the DBC substrate is not decomposed during the normal pre-oxidation treatment, and the DBC substrate is not decomposed.
During the bonding process, a resin layer that decomposes and disappears can be reliably formed.
【００１４】また、本発明に係るＤＢＣ基板の製造方法
（４）は、上記ＤＢＣ基板の製造方法（１）〜（３）の
いずれかにおいて、前記樹脂の分子量が６万〜１２０万
の範囲にあることを特徴としている。The method for manufacturing a DBC substrate (4) according to the present invention is the method for manufacturing a DBC substrate according to any one of the above-described methods (1) to (3), wherein the molecular weight of the resin is in the range of 60,000 to 1.2 million. It is characterized by having.
【００１５】上記ＤＢＣ基板の製造方法（４）によれ
ば、前記樹脂を溶媒に溶解させた時の粘度調整も簡単に
行うことができ、前記樹脂層の形成処理が容易となる。According to the DBC substrate manufacturing method (4), the viscosity when the resin is dissolved in a solvent can be easily adjusted, and the resin layer forming process is facilitated.
【００１６】また、本発明に係るＤＢＣ基板の製造方法
（５）は、上記ＤＢＣ基板の製造方法（１）において、
前記樹脂がメチルメタクリレートを主成分とし、その
他、メタクリル酸、ブチルメタクリレート、２−ヒドロ
キシメチルメタクリレート、２−ヒドロキシエチルメタ
クリレート、イソプロピルメタクリレート、フェニルメ
タクリレートのうちの少なくとも一種、及びスチレン、
ブタジエンのうちの少なくとも一種を含有する共重合体
からなることを特徴としている。Further, the method (5) for manufacturing a DBC substrate according to the present invention is the same as the method (1) for manufacturing a DBC substrate, except that
The resin is mainly composed of methyl methacrylate, other, methacrylic acid, butyl methacrylate, 2-hydroxymethyl methacrylate, 2-hydroxyethyl methacrylate, isopropyl methacrylate, at least one of phenyl methacrylate, and styrene,
It is characterized by comprising a copolymer containing at least one of butadiene.
【００１７】また、本発明に係るＤＢＣ基板の製造方法
（６）は、上記ＤＢＣ基板の製造方法（５）において、
前記樹脂原料における２−ヒドロキシエチルメタクリレ
ート、スチレン、及びブタジエンの合計重量％が２０〜
６０重量％の範囲にあることを特徴としている。Further, the method of manufacturing a DBC substrate (6) according to the present invention is the same as the method of manufacturing a DBC substrate (5), except that
The total weight% of 2-hydroxyethyl methacrylate, styrene, and butadiene in the resin material is 20 to
It is characterized by being in the range of 60% by weight.
【００１８】上記ＤＢＣ基板の製造方法（５）又は
（６）によれば、予備酸化処理時には分解せず、ＤＢＣ
接合処理により確実に分解・消失する前記樹脂層を容易
に形成することができる。また、ＯＦＣのＣｕ板との密
着性に富み、耐候性、耐摩耗性に優れた樹脂層を形成す
ることができる。According to the DBC substrate manufacturing method (5) or (6), the DBC substrate is not decomposed during the preliminary oxidation treatment, and the DBC substrate is not decomposed.
The resin layer which is surely decomposed and disappears by the bonding process can be easily formed. In addition, a resin layer having excellent adhesion to the Cu plate of the OFC and having excellent weather resistance and wear resistance can be formed.
【００１９】[0019]
【発明の実施の形態】以下、本発明の実施の形態に係る
ＤＢＣ基板の製造方法を説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a method for manufacturing a DBC substrate according to an embodiment of the present invention will be described.
【００２０】実施の形態に係るＤＢＣ基板の製造方法が
従来のＤＢＣ基板の製造方法と相違するのは、ＯＦＣ・
Ｃｕ板の予備酸化処理の前に樹脂層を形成しておく工程
が存在する点であり、その他の工程は従来のＤＢＣ基板
の製造方法と同様である。The difference between the method for manufacturing a DBC substrate according to the embodiment and the method for manufacturing a conventional DBC substrate is that
There is a step of forming a resin layer before the preliminary oxidation treatment of the Cu plate, and the other steps are the same as the conventional method of manufacturing a DBC substrate.
【００２１】樹脂層形成工程では、Ｃｕ板のセラミック
基板との非接合面、すなわちＭｏメッシュとの接触面に
図１に示したように樹脂層１０を形成する。In the resin layer forming step, the resin layer 10 is formed on the non-joining surface of the Cu plate with the ceramic substrate, that is, the contact surface with the Mo mesh as shown in FIG.
【００２２】樹脂層１０の形成方法としては、樹脂原料
を酢酸エチルや酢酸ブチル等の溶媒に溶かして刷毛を用
いて塗布する方法の他、溶媒に溶かした樹脂溶液をスプ
レー噴霧等により吹き付ける方法もあり、薄く均一に樹
脂層１０を形成するためには、前記スプレー噴霧法によ
る方が望ましい。The resin layer 10 may be formed by dissolving the resin material in a solvent such as ethyl acetate or butyl acetate and applying the solution using a brush, or by spraying a resin solution dissolved in the solvent by spraying or the like. In order to form the resin layer 10 thinly and uniformly, it is preferable to use the above-mentioned spraying method.
【００２３】通常、ＯＦＣからなるＣｕ板の予備酸化処
理は２５０〜３００℃程度の温度で行われ、セラミック
基板と前記Ｃｕ板とのＤＢＣ接合は１０００℃を超える
温度で行われる。Normally, the pre-oxidation treatment of a Cu plate made of OFC is performed at a temperature of about 250 to 300 ° C., and the DBC bonding between the ceramic substrate and the Cu plate is performed at a temperature exceeding 1000 ° C.
【００２４】従って前記樹脂は、予備酸化処理時（２５
０〜３００℃）には分解せず、ＤＢＣ接合処理時（１０
００℃以上）には速やかに分解・消失するものであるこ
とが望ましく、これら条件を満たし、また樹脂溶液とし
た際の取り扱い性、安定性等を考慮すれば、樹脂原料と
してはアクリル樹脂、ポリブテン樹脂、あるいはポリエ
ーテル樹脂等が適している。Therefore, the resin is subjected to a preliminary oxidation treatment (25
(0-300 ° C.) and does not decompose during DBC bonding (10
(00 ° C. or higher), it is desirable that the resin is decomposed and disappears quickly. Considering these conditions and considering the handling properties and stability of the resin solution, the resin raw materials include acrylic resin and polybutene. Resin or polyether resin is suitable.
【００２５】また、上記分解・消失温度を考慮すれば、
前記樹脂の分子量は６万〜１２０万程度のものが好まし
い。In consideration of the above decomposition / dissipation temperature,
The molecular weight of the resin is preferably about 60,000 to 1.2 million.
【００２６】特に前記樹脂として、メチルメタクリレー
トを主成分とし、その他、メタクリル酸、ブチルメタク
リレート、２−ヒドロキシメチルメタクリレート、２−
ヒドロキシエチルメタクリレート、イソプロピルメタク
リレート、フェニルメタクリレートのうちの少なくとも
一種、及びスチレン、又はブタジエンのうちの少なくと
も一種を含有する共重合体からなるものが好ましい。Particularly, as the resin, methyl methacrylate is a main component, and methacrylic acid, butyl methacrylate, 2-hydroxymethyl methacrylate,
It is preferable to use a copolymer containing at least one of hydroxyethyl methacrylate, isopropyl methacrylate, and phenyl methacrylate and at least one of styrene and butadiene.
【００２７】前記予備酸化温度では分解せず、該予備酸
化温度を超えると速やかに消失する点を考慮すると、上
記樹脂原料の中でも、特に２−ヒドロキシエチルメタク
リレート、及びスチレン又はブタジエンの合計重量％が
２０〜６０重量％の範囲にあるものが好ましい。In view of the fact that the resin does not decompose at the pre-oxidation temperature and quickly disappears when the temperature exceeds the pre-oxidation temperature, the total weight% of 2-hydroxyethyl methacrylate and styrene or butadiene among the above resin raw materials is particularly high. Those in the range of 20 to 60% by weight are preferred.
【００２８】樹脂層１０の形成を終えた後、ＯＦＣの予
備酸化を大気中、２５０〜３００℃の温度範囲で行な
い、図４に示したようにセラミック基板２０とＣｕ板２
１、樹脂層１０が形成されたＣｕ板２５とを合わせて治
具３０上にセットする。After the formation of the resin layer 10 is completed, preliminary oxidation of the OFC is performed in the air at a temperature in the range of 250 to 300 ° C., and as shown in FIG.
1. The jig 30 is set together with the Cu plate 25 on which the resin layer 10 is formed.
【００２９】この際樹脂層１０は治具３０に接するよう
にし、セラミック基板２０とＣｕ板２５とはＣｕ板２５
に形成されたＣｕ2 Ｏ層を介して接触させる。At this time, the resin layer 10 is in contact with the jig 30, and the ceramic substrate 20 and the Cu plate 25 are
The contact is made via the Cu 2 O layer formed on the substrate.
【００３０】その後治具３０を接合炉に搬入してＤＢＣ
接合処理を、Ｎ2 雰囲気中、１０６５〜１０８３℃の温
度範囲で行なう。Thereafter, the jig 30 is carried into the welding furnace and the DBC
The bonding process is performed in an N 2 atmosphere at a temperature range of 1065 to 1083 ° C.
【００３１】ＤＢＣ接合処理を終えたセラミック基板２
０とＣｕ板２５とは製品として取り出し、治具３０は回
収して連続使用に供する。Ceramic substrate 2 after DBC bonding process
The 0 and the Cu plate 25 are taken out as a product, and the jig 30 is collected and provided for continuous use.
【００３２】実施の形態に係るＤＢＣ基板の製造方法に
よれば、ＯＦＣの予備酸化処理の際、ＤＦＣからなるＣ
ｕ板２５の片面（Ｍｏメッシュ３２側）は樹脂層１０で
被覆されており、この片面は酸化されない。従って、そ
の後のＤＢＣ接合処理の際に、Ｍｏメッシュ３２にＣｕ
2 Ｏが付着することはなく、Ｃｕ板２５とＭｏメッシュ
３２との反応が進むことはなく、Ｃｕ板２５にＭｏメッ
シュ３２のメッシュ痕は生じない。このためＭｏメッシ
ュ３２にＣｕ2 Ｏの除去作業を施す必要がなくなり、コ
ストダウンを図ることができる。According to the method of manufacturing a DBC substrate according to the embodiment, during the preliminary oxidation treatment of the OFC,
One surface (the Mo mesh 32 side) of the u-plate 25 is covered with the resin layer 10, and this one surface is not oxidized. Therefore, at the time of the subsequent DBC bonding process, Cu
2 O does not adhere, the reaction between the Cu plate 25 and the Mo mesh 32 does not proceed, and no mesh mark of the Mo mesh 32 is formed on the Cu plate 25. Therefore, it is not necessary to remove the Cu 2 O from the Mo mesh 32, and the cost can be reduced.
【００３３】[0033]
【実施例及び比較例】以下、本発明に係るＤＢＣ基板の
製造方法の実施例、及び比較例を説明する。Examples and Comparative Examples Examples and comparative examples of a method for manufacturing a DBC substrate according to the present invention will be described below.
【００３４】実施例 （ａ）樹脂層１０の形成材料：アクリル樹脂 分子量：７万 分解温度：３２０℃（Ｎ2 中） 溶剤：酢酸エチル 塗布方法：スプレー噴霧法 （ｂ）予備酸化温度：３００℃ 雰囲気：大気 （ｃ）ＤＢＣ接合処理温度：１０７５℃ 雰囲気：Ｎ2 （ｄ）Ｃｕ2 Ｏの除去作業を行わない治具３０の連続使
用回数：８回比較例 樹脂層１０の形成を行わない他は、実施例の場合と同様
の条件で行った。 Example (a) Material for forming resin layer 10: acrylic resin Molecular weight: 70,000 Decomposition temperature: 320 ° C. (in N 2 ) Solvent: ethyl acetate Coating method: spray spraying method (b) Pre-oxidation temperature: 300 ° C. Atmosphere: air (c) DBC bonding treatment temperature: 1075 ° C. Atmosphere: N 2 (d) Continuous use number of jigs 30 not performing Cu 2 O removal operation: 8 times Comparative Example Other than not forming resin layer 10 Was performed under the same conditions as in the example.
【００３５】評価 連続使用回数に対するメッシュ痕発生率で評価を行な
い、その結果を図２に示した。[0035] subjected to evaluation in meshes flaw generation rate with respect to evaluation of continuous use count, and the results are shown in Figure 2.
【００３６】実施例の場合、連続使用８回でもメッシュ
痕不良は発生しなかったが、比較例の場合、連続使用５
回からメッシュ痕不良が発生しだした。In the case of the embodiment, no mesh mark defect occurred even after the continuous use 8 times.
A mesh mark defect began to occur from the second time.
【００３７】上記結果から明らかなように、実施例に係
るＤＢＣ基板の製造方法によれば、治具３０におけるＣ
ｕ2 Ｏ除去作業をなくし、コストダウンを図ることがで
きる。As is clear from the above results, according to the DBC substrate manufacturing method of the embodiment, the C
The operation for removing u 2 O can be eliminated, and the cost can be reduced.
【図１】本発明の実施の形態に係るＤＢＣ基板の製造方
法に用いられるＣｕ板に樹脂層が形成されたＯＦＣを示
す側面図である。FIG. 1 is a side view showing an OFC in which a resin layer is formed on a Cu plate used in a method for manufacturing a DBC substrate according to an embodiment of the present invention.
【図２】実施例及び比較例に係る治具の使用回数とＣｕ
板におけるメッシュ痕発生率との関係を示すグラフであ
る。FIG. 2 shows the number of times the jigs according to Examples and Comparative Examples were used and Cu
It is a graph which shows the relationship with the mesh mark generation rate in a board.
【図３】従来のＤＢＣ基板の構造を示す側断面図であ
る。FIG. 3 is a side sectional view showing a structure of a conventional DBC substrate.
【図４】接合時における炉への搬入状態を示す側面図で
ある。FIG. 4 is a side view showing a state of being carried into a furnace at the time of joining.
【図５】メッシュ痕が生じたＣｕ板を示す平面図であ
る。FIG. 5 is a plan view showing a Cu plate having mesh marks.
１０ 樹脂層 ２０ セラミック基板 ２１ Ｃｕ板（配線用） ２５ Ｃｕ板（反り防止） ３０ 治具 Reference Signs List 10 resin layer 20 ceramic substrate 21 Cu plate (for wiring) 25 Cu plate (prevention of warping) 30 jig
Claims (6)
Ｃｕ板を予備酸化した後、接合炉中でセラミック基板と
接合させるＤＢＣ（Direct Bonding Copper）基板の製
造方法において、予備酸化温度を超える温度であって接
合温度以下の温度で分解する樹脂層を、前記Ｃｕ板の非
接合面に、予備酸化処理の前に予め形成しておくことを
特徴とするＤＢＣ基板の製造方法。In a method for manufacturing a DBC (Direct Bonding Copper) substrate in which a Cu plate made of OFC (Oxygen Free Copper) is pre-oxidized and then bonded to a ceramic substrate in a bonding furnace, the temperature exceeds a pre-oxidation temperature. A method of forming a resin layer that decomposes at a temperature equal to or lower than a bonding temperature on a non-bonding surface of the Cu plate before the preliminary oxidation treatment.
脂、あるいはポリエーテル樹脂であることを特徴とする
請求項１記載のＤＢＣ基板の製造方法。2. The method according to claim 1, wherein the resin is an acrylic resin, a polybutene resin, or a polyether resin.
の範囲にあることを特徴とする請求項１又は請求項２記
載のＤＢＣ基板の製造方法。3. The decomposition temperature of the resin is 250 to 400 ° C.
3. The method for manufacturing a DBC substrate according to claim 1 or 2, wherein
囲にあることを特徴とする請求項１〜３のいずれかの項
に記載のＤＢＣ基板の製造方法。4. The method for manufacturing a DBC substrate according to claim 1, wherein the resin has a molecular weight in a range of 60,000 to 1,200,000.
分とし、その他、メタクリル酸、ブチルメタクリレー
ト、２−ヒドロキシメチルメタクリレート、２−ヒドロ
キシエチルメタクリレート、イソプロピルメタクリレー
ト、フェニルメタクリレートのうちの少なくとも一種、
及びスチレン、ブタジエンのうちの少なくとも一種を含
有する共重合体からなることを特徴とする請求項１記載
のＤＢＣ基板の製造方法。5. The method according to claim 1, wherein the resin is mainly composed of methyl methacrylate, and at least one of methacrylic acid, butyl methacrylate, 2-hydroxymethyl methacrylate, 2-hydroxyethyl methacrylate, isopropyl methacrylate, and phenyl methacrylate.
The method for producing a DBC substrate according to claim 1, comprising a copolymer containing at least one of styrene and butadiene.
チルメタクリレート、スチレン、及びブタジエンの合計
重量％が２０〜６０重量％の範囲にあることを特徴とす
る請求項５記載のＤＢＣ基板の製造方法。6. The method for producing a DBC substrate according to claim 5, wherein the total weight% of 2-hydroxyethyl methacrylate, styrene and butadiene in the resin raw material is in the range of 20 to 60% by weight.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8249153A JPH1074864A (en) | 1996-08-30 | 1996-08-30 | Manufacture of dbc board |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8249153A JPH1074864A (en) | 1996-08-30 | 1996-08-30 | Manufacture of dbc board |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH1074864A true JPH1074864A (en) | 1998-03-17 |
Family
ID=17188701
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8249153A Pending JPH1074864A (en) | 1996-08-30 | 1996-08-30 | Manufacture of dbc board |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH1074864A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012001430A (en) * | 2010-06-14 | 2012-01-05 | Ixys Semiconductor Gmbh | Method for manufacturing double-sided metallized ceramic substrate |
| CN113804004A (en) * | 2021-08-12 | 2021-12-17 | 上海富乐华半导体科技有限公司 | Method for improving reliability of surface oxide layer of sintering furnace conveyor belt |
| CN115558880A (en) * | 2022-11-30 | 2023-01-03 | 四川富乐华半导体科技有限公司 | Method for oxidizing DCB copper sheet |
-
1996
- 1996-08-30 JP JP8249153A patent/JPH1074864A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012001430A (en) * | 2010-06-14 | 2012-01-05 | Ixys Semiconductor Gmbh | Method for manufacturing double-sided metallized ceramic substrate |
| CN113804004A (en) * | 2021-08-12 | 2021-12-17 | 上海富乐华半导体科技有限公司 | Method for improving reliability of surface oxide layer of sintering furnace conveyor belt |
| CN113804004B (en) * | 2021-08-12 | 2024-03-19 | 上海富乐华半导体科技有限公司 | Method for improving reliability of oxide layer on surface of conveyor belt of sintering furnace |
| CN115558880A (en) * | 2022-11-30 | 2023-01-03 | 四川富乐华半导体科技有限公司 | Method for oxidizing DCB copper sheet |
| CN115558880B (en) * | 2022-11-30 | 2023-03-03 | 四川富乐华半导体科技有限公司 | Method for oxidizing DCB copper sheet |
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