JPH1070078A - Semiconductor manufacturing equipment - Google Patents

Abstract

PROBLEM TO BE SOLVED: To prevent corrosion and breakdown of a Pirani sensor, facilitate attaching and detaching, and improve maintainability. SOLUTION: A protective valve 6 is installed in this side of a Pirani sensor connected to the exhaust piping 3B of a reaction chamber 1. When corrosive gas is used as reaction gas and discharged, the corrosive gas is prevented from flowing toward the Pirani sensor 5 by closing the protective valve 6. Thereby the Pirani sensor is prevented from being corroded and broken down, attaching and detaching the Pirani sensor are facilitated, and maintainability is improved.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing apparatus such as a CVD apparatus, a single-wafer CVD apparatus, and a diffusion apparatus.

[0002]

2. Description of the Related Art FIG. 2 is an explanatory view showing an example of a conventional apparatus. In FIG. 2, 1 denotes a reaction chamber, 2A and 2B denote gas introduction pipes, 3A and 3B denote exhaust pipes, 4 denotes a branch pipe, 5 denotes a Pirani sensor, 7 denotes a heater, and 8 denotes a gate valve. In the conventional example, a branch pipe 4 is connected to an exhaust pipe 3B of the reaction chamber 1, and a Pirani sensor 5 is directly attached to the branch pipe 4.

[0003]

In the prior art, since the Pirani sensor 5 is attached to the exhaust pipe 3B via the branch pipe 4, the Pirani sensor 5 is corroded or destroyed when a corrosive gas flows. Therefore, there is a problem that the frequency of replacement becomes extremely high and the maintainability is poor.

[0004]

In order to solve the aforementioned problem of the prior art, the Pirani sensor is connected to an exhaust pipe 3B of a reaction chamber 1 as shown in FIG. The protection valve 6 is attached to the front.

[0005]

FIG. 1 shows a first embodiment of the apparatus of the present invention.
It is explanatory drawing which shows an example. In this embodiment, a wafer is carried into a reaction chamber 1 from a gate valve 8, a reaction gas is introduced into the reaction chamber 1 from one gas introduction pipe 2A while the wafer is heated by a heater 7, and a wafer is introduced from one exhaust pipe 3B. In a single-wafer CVD apparatus that exhausts gas and introduces a reaction gas from the other gas introduction pipe 2B into the reaction chamber 1 and exhausts gas from the other exhaust pipe 3A to form a film on a wafer, the exhaust gas is supplied to one exhaust pipe 3B. The branch pipe 4 is connected, and the protection valve 6 and the Pirani sensor 5 are connected to the branch pipe 4 in this order.

With such a configuration, a corrosive gas is used as a reaction gas, and when exhausting the corrosive gas, the protective valve 6 is closed to prevent the corrosive gas from going to the Pirani sensor 5. There is no risk of the Pirani sensor 5 being corroded or destroyed, so that the Pirani sensor can be easily attached and detached, and the maintainability is improved.

[0007]

As described above, according to the present invention, corrosion and destruction of the Pirani sensor can be prevented, and the Pirani sensor can be easily attached and detached, so that the maintainability can be improved.

[Brief description of the drawings]

FIG. 1 is an explanatory diagram showing an example of an embodiment of the device of the present invention.

FIG. 2 is an explanatory diagram showing one example of a conventional device.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Reaction chamber 2A, 2B Gas introduction pipe 3A, 3B Exhaust pipe 4 Branch pipe 5 Pirani sensor 6 Protection valve 7 Heater 8 Gate valve

Claims (1)

[Claims] 1. A semiconductor manufacturing apparatus, wherein a protection valve is mounted in front of a Pirani sensor connected to an exhaust pipe of a reaction chamber.