JPH03285884A - Silicon carbide jig - Google Patents
Silicon carbide jigInfo
- Publication number
- JPH03285884A JPH03285884A JP2087976A JP8797690A JPH03285884A JP H03285884 A JPH03285884 A JP H03285884A JP 2087976 A JP2087976 A JP 2087976A JP 8797690 A JP8797690 A JP 8797690A JP H03285884 A JPH03285884 A JP H03285884A
- Authority
- JP
- Japan
- Prior art keywords
- silicon carbide
- jig
- silicon nitride
- pipe
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 20
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 20
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 13
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 13
- 239000000463 material Substances 0.000 abstract description 11
- 229910001385 heavy metal Inorganic materials 0.000 abstract description 9
- 239000004065 semiconductor Substances 0.000 abstract description 8
- 238000010438 heat treatment Methods 0.000 abstract description 6
- 238000011109 contamination Methods 0.000 abstract description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 abstract description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract description 2
- 230000004888 barrier function Effects 0.000 abstract description 2
- 229910000077 silane Inorganic materials 0.000 abstract description 2
- 239000011248 coating agent Substances 0.000 abstract 2
- 238000000576 coating method Methods 0.000 abstract 2
- 229910021529 ammonia Inorganic materials 0.000 abstract 1
- 239000000356 contaminant Substances 0.000 abstract 1
- 239000006185 dispersion Substances 0.000 abstract 1
- 239000012535 impurity Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 229910000953 kanthal Inorganic materials 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 1
- 229910052863 mullite Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Landscapes
- Ceramic Products (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は半導体の加熱処理用の炭化硅素管及び炭化硅素
治具の表面保護材に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a surface protection material for silicon carbide tubes and silicon carbide jigs for heat treatment of semiconductors.
［従来の技術］
従来、１２００℃以上の半導体の加熱処理には炭化硅素
管や炭化硅素治具が熱変形を起さないと云う事にて、用
いられるのが通例であった。[Prior Art] Conventionally, silicon carbide tubes and silicon carbide jigs have been commonly used for heat treatment of semiconductors at temperatures of 1200° C. or higher because they do not cause thermal deformation.
［発明が解決しようとする課題］
しかし、上記従来技術によると、炭化硅素管は炭化硅素
管の外部に設置されるムライト管やカンタル・ヒーター
からの重金属不純物の拡散や、炭化珪素管自体や炭化硅
素治具自体の含有せる重金属不純物の拡散により、加熱
処理する半導体としてのシリコン半導体等へのこれら重
金属不純物汚染が防止出来ないと云う課題があった。[Problems to be Solved by the Invention] However, according to the above-mentioned prior art, silicon carbide tubes suffer from the diffusion of heavy metal impurities from the mullite tubes and Kanthal heaters installed outside the silicon carbide tubes, and from the silicon carbide tube itself and carbide. There has been a problem in that due to the diffusion of heavy metal impurities contained in the silicon jig itself, it is impossible to prevent contamination of silicon semiconductors and the like as semiconductors to be heat-treated with these heavy metal impurities.
本発明は、かかる従来技術の課題を解決する為の炭化硅
素治具に新しい表面保護材を構成する事を目的とする。The object of the present invention is to provide a new surface protection material for a silicon carbide jig in order to solve the problems of the prior art.
［課題を解決するための手段］
上記課題を解決する為に、本発明は炭化硅素治具に関し
、少（とも一部表面か、あるいは全表面を窒化硅素材で
被覆する手段をとる〇
［実施例コ
以下、実施例により本発明を詳述する。[Means for Solving the Problems] In order to solve the above problems, the present invention relates to a silicon carbide jig, and takes measures to cover at least a portion of the surface or the entire surface with a silicon nitride material. EXAMPLES The present invention will now be explained in detail with reference to Examples.
いま、長さ２ ｍ 、内径９インチ、肉厚５咽程度の炭
化硅素管の外部をカンタル・ヒーターで加熱しながら、
前記炭化硅素管のガス導入口からシラン争ガスとアンモ
ニア・ガスを導入する事により内壁に１ｍｍ厚程鹿の窒
化硅素材を熱化学反応により形成する事ができる。又、
前記炭化硅素管を反応管と見なし、該反応管内に炭化硅
素ボート等の炭化硅素治具を挿入すれば、これら炭化硅
素治具表面に窒化硅素材を被覆することもできる。尚、
窒化硅素材の形成方法は上記の如きＣｖＤ（化学蒸着）
法による他プラズマＯＶＤやスパッタ法等を用いる事も
できる。Now, while heating the outside of a silicon carbide tube with a length of 2 m, an inner diameter of 9 inches, and a wall thickness of about 5 mm, using a Kanthal heater,
By introducing silane gas and ammonia gas through the gas inlet of the silicon carbide tube, a 1 mm thick silicon nitride material can be formed on the inner wall by thermochemical reaction. or,
If the silicon carbide tube is regarded as a reaction tube and a silicon carbide jig such as a silicon carbide boat is inserted into the reaction tube, the surface of the silicon carbide jig can be coated with a silicon nitride material. still,
The method of forming the silicon nitride material is CvD (chemical vapor deposition) as described above.
In addition to the method, plasma OVD, sputtering, etc. can also be used.
更に、窒化硅素材表面や窒化珪素材下面に酸化硅素材を
形成しても良い事は云うまでもない。Furthermore, it goes without saying that a silicon oxide material may be formed on the surface of the silicon nitride material or on the bottom surface of the silicon nitride material.
窒化硅素材は重金属不純物の反応炉内や治具からの拡散
を防止するすぐれた障壁効果を有して居り、本発明によ
る反応管と治具を用いてシリコン半導体ウェーハを１２
００℃以上で長時間熱処理しても、重金属汚染の指標で
あるライフ、タイムの劣化は来たさないと云う作用があ
る。Silicon nitride material has an excellent barrier effect to prevent heavy metal impurities from diffusing inside the reactor and from the jig.
Even if heat treated at 00° C. or higher for a long time, life and time, which are indicators of heavy metal contamination, will not deteriorate.
「発明の効果コ
本発明により重金属汚染の無い半導体の高温熱処理が可
能となる効果がある。``Effects of the Invention The present invention has the effect of enabling high-temperature heat treatment of semiconductors without heavy metal contamination.
以上that's all
Claims (1)
窒化硅素で被覆した治具となす事を特徴とする炭化硅素
治具。A silicon carbide jig characterized in that it is a tube whose at least the inner surface is coated with silicon nitride or a jig whose entire surface is coated with silicon nitride.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2087976A JPH03285884A (en) | 1990-04-02 | 1990-04-02 | Silicon carbide jig |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2087976A JPH03285884A (en) | 1990-04-02 | 1990-04-02 | Silicon carbide jig |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03285884A true JPH03285884A (en) | 1991-12-17 |
Family
ID=13929865
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2087976A Pending JPH03285884A (en) | 1990-04-02 | 1990-04-02 | Silicon carbide jig |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03285884A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0713245A3 (en) * | 1994-11-17 | 1996-09-04 | Shinetsu Handotai Kk | A heat treatment jig for semiconductor wafers and a method for treating a surface of the same |
| JP2010225999A (en) * | 2009-03-25 | 2010-10-07 | Showa Denko Kk | Method of manufacturing compound semiconductor, method of manufacturing compound semiconductor light emitting element, compound semiconductor manufacturing device, and tool for manufacturing compound semiconductor |
-
1990
- 1990-04-02 JP JP2087976A patent/JPH03285884A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0713245A3 (en) * | 1994-11-17 | 1996-09-04 | Shinetsu Handotai Kk | A heat treatment jig for semiconductor wafers and a method for treating a surface of the same |
| US5759426A (en) * | 1994-11-17 | 1998-06-02 | Shin-Etsu Handotai Co., Ltd. | Heat treatment jig for semiconductor wafers and a method for treating a surface of the same |
| JP2010225999A (en) * | 2009-03-25 | 2010-10-07 | Showa Denko Kk | Method of manufacturing compound semiconductor, method of manufacturing compound semiconductor light emitting element, compound semiconductor manufacturing device, and tool for manufacturing compound semiconductor |
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