JPH1056211A - Manufacture of thermoelectric conversion element - Google Patents
Manufacture of thermoelectric conversion elementInfo
- Publication number
- JPH1056211A JPH1056211A JP8211109A JP21110996A JPH1056211A JP H1056211 A JPH1056211 A JP H1056211A JP 8211109 A JP8211109 A JP 8211109A JP 21110996 A JP21110996 A JP 21110996A JP H1056211 A JPH1056211 A JP H1056211A
- Authority
- JP
- Japan
- Prior art keywords
- thermoelectric semiconductor
- filler
- thermoelectric
- conversion element
- plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
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- Powder Metallurgy (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、熱電変換素子の製
造方法に関するものである。The present invention relates to a method for manufacturing a thermoelectric conversion element.
【０００２】[0002]
【従来の技術】電気エネルギーを熱エネルギーに変換す
るペルチェ効果を利用した熱電変換素子を用いて冷却装
置を製造し、電子部品の冷却を行ったり、冷凍源を生成
することが近年盛んである。2. Description of the Related Art In recent years, a cooling device has been manufactured by using a thermoelectric conversion element utilizing the Peltier effect for converting electric energy into heat energy to cool electronic components or to generate a refrigeration source.
【０００３】熱電変換素子を組み込んで冷却装置を作製
する際、図４に示すように熱電変換素子２１と電極２２
とを電気的に結合させるために半田２３により半田付け
を行うが、半田の流れを良くすること、及び、半田の成
分が素子に拡散して素子特性が劣化することを防止する
こと、のために、熱電変換素子２１の電極２２との対向
面に金属膜２４を形成し、金属膜２４と電極２２とを半
田２３により半田付けさせる必要がある。このような金
属膜２４を熱電変換素子２１上に形成し、これを冷却装
置等に組み込むために行われている従来の製造方法を、
図５を用いて説明する。When a cooling device is manufactured by incorporating a thermoelectric conversion element, a thermoelectric conversion element 21 and an electrode 22 are formed as shown in FIG.
Is soldered with the solder 23 in order to electrically couple the components with each other, in order to improve the flow of the solder and to prevent the components of the solder from diffusing into the element and preventing the element characteristics from deteriorating. Then, it is necessary to form a metal film 24 on the surface of the thermoelectric conversion element 21 facing the electrode 22 and solder the metal film 24 and the electrode 22 with solder 23. A conventional manufacturing method performed for forming such a metal film 24 on the thermoelectric conversion element 21 and incorporating the same in a cooling device or the like is as follows.
This will be described with reference to FIG.
【０００４】まず、熱電変換素子を結晶合金で構成する
場合には、ブリッジマン法、ゾーンメルト法等で一方向
に結晶成長させた固溶体合金のインゴッドを、また、結
晶合金の焼結体で構成する場合には、結晶合金を粉末化
し、ホットプレスして焼結体を形成する。図５におい
て、符号２５で示されるものが、インゴッド又は焼結体
である。First, when the thermoelectric conversion element is made of a crystal alloy, an ingot of a solid solution alloy grown in one direction by a Bridgman method, a zone melt method, or the like, or a sintered body of the crystal alloy is used. In this case, the crystalline alloy is powdered and hot pressed to form a sintered body. In FIG. 5, what is indicated by reference numeral 25 is an ingot or a sintered body.
【０００５】その後、これらのインゴッド又は焼結体２
５を板状に切断し、板状体（以下、ウエハーと称す
る。）２６を成形する（切断工程）。Thereafter, these ingots or sintered bodies 2
5 is cut into a plate shape to form a plate-shaped body (hereinafter, referred to as a wafer) 26 (cutting step).
【０００６】次に、ウエハー２６をメッキ液が充填され
たメッキ槽２７に投入し、ウエハー２６の表面全てにメ
ッキ処理を施す（メッキ工程）。Next, the wafer 26 is put into a plating tank 27 filled with a plating solution, and the entire surface of the wafer 26 is plated (plating step).
【０００７】次に、メッキ処理が施されたウエハー２６
を素子の大きさに切りだす（ダイシング工程）。このダ
イシング工程で、熱電変換素子２１に形成されるメッキ
面が、対向した２面のみとなる。Next, the plated wafer 26
Is cut out to the size of the element (dicing step). In this dicing step, only two opposing plating surfaces are formed on the thermoelectric conversion element 21.
【０００８】このようにして製造された熱電変換素子２
１のメッキ面を図 に示すように電極２２と対面させ、
半田付けにより電極２２と熱電変換素子２１をメッキ皮
膜（金属膜２４）及び半田２３を介して結合し、素子を
組み込んで冷却装置を作製するものである。The thermoelectric conversion element 2 thus manufactured
The plating surface of No. 1 faces the electrode 22 as shown in FIG.
The electrode 22 and the thermoelectric conversion element 21 are connected via a plating film (metal film 24) and solder 23 by soldering, and the cooling element is manufactured by incorporating the element.
【０００９】[0009]
【発明が解決すべき課題】従来の熱電変換素子の製造方
法は、以上のようにして行われている。ところで、上記
説明したダイシング工程は、素子の対向する２面のみに
メッキ面を形成させるために従来の製造方法では必ず必
要な工程である。ところがこのダイシング工程では、ウ
エハーの外周側で切りだされたものは、その側部にもメ
ッキ面が付着しているため、これらを素子として使用す
ると、電流がメッキ面を流れてしまい、性能が低下す
る。また、半田付けをする際に、半田が素子の側面にも
流れてしまい、これも性能低下の要因となる。上記理由
のため、側部にメッキ面が付着したものは、素子として
使用できない。またウエハーが円板状のものであるとき
は、ウエハーの外周側で切りだされたものは、内周側で
切りだされたものと形状が異なってしまう。このような
理由のため、ウエハーの外周部で切りだされたものは廃
棄することとなり、材料歩留りの悪化を招いていた。The conventional method for manufacturing a thermoelectric conversion element is performed as described above. The dicing step described above is a necessary step in the conventional manufacturing method in order to form plating surfaces only on two opposing surfaces of the element. However, in this dicing process, what is cut out on the outer peripheral side of the wafer also has a plating surface adhered to the side, so if these are used as elements, current will flow through the plating surface and the performance will decrease. descend. In addition, when soldering, the solder also flows to the side surface of the element, which also causes a reduction in performance. For the above-mentioned reason, a device having a plated surface attached to a side cannot be used as an element. When the wafer has a disk shape, the shape cut out on the outer peripheral side of the wafer is different from the shape cut out on the inner peripheral side. For such a reason, the wafer cut at the outer peripheral portion of the wafer is discarded, resulting in deterioration of the material yield.
【００１０】故に、本発明は、上記実情に鑑みてなされ
たものであり、熱電変換素子の製造方法において、製造
歩留りを向上させることを技術的課題とするものであ
る。[0010] Therefore, the present invention has been made in view of the above-mentioned circumstances, and an object of the present invention is to improve the production yield in a method of manufacturing a thermoelectric conversion element.
【００１１】[0011]
【課題を解決するための手段】上記技術的課題を解決す
るために、本発明の請求項１において講じた技術的手段
は、熱電半導体を充填槽に投入し、前記充填槽内に充填
剤を充填する充填工程と、前記充填剤を固化して固形混
合体とする固化工程と、前記固形混合体を板状に切断し
て複数の板状体を成形する切断工程と、前記板状体にメ
ッキ処理を施すメッキ工程と、メッキ処理が施された前
記板状体を充填剤除去液に浸して充填剤を溶出させる充
填剤溶出工程と、を備えることを特徴とする熱電変換素
子の製造方法としたことである。Means for Solving the Problems In order to solve the above technical problem, a technical measure taken in claim 1 of the present invention is to charge a thermoelectric semiconductor into a filling tank and to fill the filling tank with the filler. A filling step of filling, a solidifying step of solidifying the filler to form a solid mixture, a cutting step of cutting the solid mixture into a plate to form a plurality of plate-like bodies, A method for producing a thermoelectric conversion element, comprising: a plating step of performing a plating process; and a filler elution step of immersing the plated body in a filler removing liquid to elute the filler. It was that.
【００１２】上記技術的手段は、以下のように作用す
る。即ち、熱電半導体を充填槽に投入し、充填槽内に充
填材を充填し（充填工程）、充填材を固化して固形混合
体とし（固化工程）、固形混合体を板状に切断して複数
の板状体を成形し（切断工程）、板状体にメッキ処理を
施し（メッキ工程）、メッキ処理が施された板状体を充
填材除去液に浸して充填材を溶出させる（充填剤溶出工
程）。熱電半導体は、切断工程により、切断面のみが露
出され、その他の面は充填剤により固められている。こ
の状態においてメッキ処理を行うと、切断面のみがメッ
キされる。その後に、充填剤溶出工程で充填剤を溶出さ
せることにより、対向する２面のみにメッキ処理が施さ
れた熱電変換素子を製造することができるものである。The above technical means operates as follows. That is, the thermoelectric semiconductor is put into a filling tank, the filling tank is filled with a filler (filling step), the filler is solidified to form a solid mixture (solidification step), and the solid mixture is cut into a plate shape. A plurality of plate-like bodies are formed (cutting step), the plate-like bodies are plated (plating step), and the plated plate-like bodies are immersed in a filler removing liquid to elute the filler (filling). Agent elution step). In the thermoelectric semiconductor, only the cut surface is exposed by the cutting process, and the other surface is solidified by the filler. When plating is performed in this state, only the cut surface is plated. Thereafter, by eluting the filler in the filler elution step, a thermoelectric conversion element in which only two opposing surfaces are plated can be manufactured.
【００１３】上記技術的課題を解決するにあたって、本
発明の請求項２において講じた技術的手段のように、前
記熱電半導体は、長尺柱状の外形形状を呈しており、前
記切断工程において、前記熱電半導体の長尺軸に対して
垂直面で切断することが好ましい。これは、長細い棒状
の熱電半導体を用いて充填槽内に充填固化し、固化後に
熱電半導体の軸方向に対して垂直な面で切断して板状体
を成形し、該板状体を充填剤除去液に浸して充填剤を溶
出させるものである。In solving the above technical problem, the thermoelectric semiconductor has a long columnar outer shape as in the technical means taken in claim 2 of the present invention. It is preferable to cut the thermoelectric semiconductor along a plane perpendicular to the long axis. This involves filling and solidifying the filling tank using a long thin rod-shaped thermoelectric semiconductor, cutting the solidified surface along a plane perpendicular to the axial direction of the thermoelectric semiconductor, forming a plate, and filling the plate. The filler is eluted by immersion in an agent removing liquid.
【００１４】より好ましくは、本発明の請求項３におい
て講じた技術的手段のように、前記熱電半導体は、粉末
化された熱電半導体結晶粉末を加熱しつつ押し出して成
形された熱電半導体焼結体であることが好ましい。これ
は、長尺柱状の熱電半導体を成形するのに、まず、熱電
半導体の結晶を粉末化して熱電半導体結晶粉末とし、該
熱電半導体結晶粉末を加熱しつつ押し出して熱電半導体
焼結体とするものである。押し出し成形により熱電半導
体焼結体を作製するため、長尺柱状の熱電半導体焼結体
が容易に製造できるものである。More preferably, as in the technical means adopted in claim 3 of the present invention, the thermoelectric semiconductor is a thermoelectric semiconductor sintered body formed by extruding a thermoelectric semiconductor crystal powder extruded while heating. It is preferred that In this method, a long columnar thermoelectric semiconductor is formed by first pulverizing a thermoelectric semiconductor crystal into a thermoelectric semiconductor crystal powder, and extruding the thermoelectric semiconductor crystal powder while heating to form a thermoelectric semiconductor sintered body. It is. Since the thermoelectric semiconductor sintered body is manufactured by extrusion molding, a long columnar thermoelectric semiconductor sintered body can be easily manufactured.
【００１５】[0015]
【発明の実施の形態】以下、本発明の実施形態例を、図
面に基づいて説明する。Embodiments of the present invention will be described below with reference to the drawings.
【００１６】結晶合金作製工程 まず、熱電半導体としての原材料であるＢｉ、Ｔｅ、Ｓ
ｅを所定量用意し、ブリッジマン法、ゾーンメルト法等
の公知の方法により一方向凝固させ、図１（ａ）に示す
ような熱電半導体結晶合金１を作る。Crystal Alloy Manufacturing Step First, Bi, Te, S, which are raw materials as a thermoelectric semiconductor,
e is prepared in a predetermined amount and unidirectionally solidified by a known method such as a Bridgman method or a zone melt method to produce a thermoelectric semiconductor crystal alloy 1 as shown in FIG.
【００１７】粉末化工程 次に、この熱電半導体結晶合金を粉砕して図１（ｂ）に
示すような熱電半導体結晶粉末２とする。本実施形態例
においては、粉砕機としてボールミルを使用し、また粉
砕したときの粉末粒子径は１００μｍ以下となるように
調整した。Powdering Step Next, the thermoelectric semiconductor crystal alloy is pulverized into thermoelectric semiconductor crystal powder 2 as shown in FIG. In the present embodiment, a ball mill was used as a pulverizer, and the particle size of the powder when pulverized was adjusted to be 100 μm or less.
【００１８】熱間押出工程 粉末化工程により作製した熱電半導体結晶粉末２を図２
に示すような押出装置３の金型４内に充填し、金型４の
外表面に取り付けられたプレートヒータ５で金型４を４
００℃に加熱する。昇温した後、パンチ６を油圧等の駆
動手段により図示矢印Ａ方向に移動させ、金型４内に充
填された熱電半導体結晶粉末２に押圧力を加える。この
ため、熱電半導体結晶粉末２は加熱しつつ押圧力を加え
られ、矢印Ａ方向に押し出される。そして、金型４の出
口孔４ａより熱電半導体焼結体７として排出される。こ
の場合において、金型４の出口孔４ａの断面形状は、熱
電半導体を素子として使用するときの断面形状に一致さ
せておく。これにより、素子の断面形状をもった長尺柱
状の熱電半導体焼結体が製造される。尚、本実施形態例
では、素子の断面を円形状とし、押し出された熱電半導
体焼結体７は円柱形状である。Hot Extrusion Step FIG. 2 shows the thermoelectric semiconductor crystal powder 2 produced by the powdering step.
Is filled in a mold 4 of an extruder 3 as shown in FIG. 1 and the mold 4 is heated by a plate heater 5 attached to the outer surface of the mold 4.
Heat to 00 ° C. After the temperature is raised, the punch 6 is moved in the direction of the arrow A by a driving means such as a hydraulic pressure to apply a pressing force to the thermoelectric semiconductor crystal powder 2 filled in the mold 4. Therefore, the pressing force is applied to the thermoelectric semiconductor crystal powder 2 while heating, and the thermoelectric semiconductor crystal powder 2 is extruded in the direction of arrow A. Then, the thermoelectric semiconductor sintered body 7 is discharged from the exit hole 4 a of the mold 4. In this case, the cross-sectional shape of the exit hole 4a of the mold 4 is made to match the cross-sectional shape when the thermoelectric semiconductor is used as an element. Thus, a long columnar thermoelectric semiconductor sintered body having the cross-sectional shape of the element is manufactured. In the present embodiment, the cross section of the element is circular, and the extruded thermoelectric semiconductor sintered body 7 is cylindrical.
【００１９】充填工程 次に、前記熱間押出工程において製造した円柱状の熱電
半導体焼結体７を複数本同時に、図３（ａ）に示す充填
槽８に投入する。この場合において、複数本の熱電半導
体焼結体７の円柱軸が同じとなるように充填槽８内に投
入することが好ましい。熱電半導体焼結体７の充填槽８
への投入後、充填剤９を充填槽８内に充填する。本実施
形態例では充填剤としてエポキシ樹脂を使用した。充填
剤９の性質として、充填剤９が固化したときに充填槽８
から容易に離型できるものが好ましい。Next, a plurality of cylindrical thermoelectric semiconductor sintered bodies 7 produced in the hot extrusion step are simultaneously put into a filling tank 8 shown in FIG. In this case, it is preferable that the plurality of thermoelectric semiconductor sintered bodies 7 are charged into the filling tank 8 so that the cylindrical axes thereof are the same. Filling tank 8 for thermoelectric semiconductor sintered body 7
After the charging, the filler 9 is filled in the filling tank 8. In this embodiment, an epoxy resin is used as a filler. As a property of the filler 9, when the filler 9 solidifies,
The one which can be easily released from the mold is preferable.
【００２０】固化工程 充填剤の充填後、所定時間放置し、充填剤を固化させ
る。充填剤を固化させるにあたって、固化時間の短縮の
ため、加熱、照射等の所定の操作を行っても差し支えな
い。充填剤の固化により、図３（ｂ）に示すように焼結
体と充填剤が一体となった固形混合物１０が成形でき
る。Solidification Step After filling the filler, the filler is left for a predetermined time to solidify the filler. In solidifying the filler, predetermined operations such as heating and irradiation may be performed to shorten the solidification time. By solidifying the filler, a solid mixture 10 in which the sintered body and the filler are integrated as shown in FIG. 3B can be formed.
【００２１】切断工程 次に、固形混合物１０を充填槽から離型して取り出し、
図３（ｂ）に示すように固形混合物１０を板状に切断し
て板状体１１を作製する。このときの切断方向は、円柱
状の熱電半導体焼結体７を輪切りにする方向、即ち、熱
電半導体焼結体７の円柱軸に対して垂直な面で切断する
ことが好ましい。また、切断間隔は、実際に熱電半導体
を熱電変換素子として使用する長さ分の間隔とすること
が好ましい。このように切断すると、板状体１１内にお
いて点在する熱電半導体は、断面及び長さ共に実際に使
用する熱電変換素子と同じとなり、板状体１１内に熱電
変換素子が点在する状態となる。また、切断装置として
は、マルチワイヤーソー、内周刃スライサーが使用でき
る。Cutting Step Next, the solid mixture 10 is released from the filling tank by releasing from the mold.
As shown in FIG. 3B, the solid mixture 10 is cut into a plate shape to produce a plate-like body 11. The cutting direction at this time is preferably a direction in which the cylindrical thermoelectric semiconductor sintered body 7 is sliced, that is, a plane perpendicular to the cylinder axis of the thermoelectric semiconductor sintered body 7. Further, it is preferable that the cutting interval is an interval corresponding to the length of actually using the thermoelectric semiconductor as a thermoelectric conversion element. When cut in this manner, the thermoelectric semiconductors scattered in the plate-like body 11 have the same cross-section and length as the thermoelectric conversion elements actually used, and the state in which the thermoelectric conversion elements are scattered in the plate-like body 11 Become. Further, as the cutting device, a multi-wire saw and an inner peripheral blade slicer can be used.
【００２２】メッキ工程 次に、切断工程で作製された板状体１１を、図３（ｃ）
に示すようにメッキ液が充填されたメッキ槽１２に投入
し、メッキ処理を施す。板状体１１内の熱電半導体焼結
体７は、切断工程により切断されたときの切断面が外部
に露出しており、その他の面は充填剤９により固められ
ているため、メッキ工程において熱電半導体焼結体７
は、この露出面のみがメッキされ、充填剤により固めら
れている面はメッキされない。つまり、充填剤９が、熱
電半導体焼結体７の外表面を部分的にマスキングするよ
うに働く。Plating Step Next, the plate-like body 11 produced in the cutting step is put into the plating step shown in FIG.
As shown in (1), the plating solution is charged into a plating tank 12 filled with a plating solution, and a plating process is performed. The cut surface of the thermoelectric semiconductor sintered body 7 in the plate-shaped body 11 when cut in the cutting step is exposed to the outside, and the other surface is solidified by the filler 9. Semiconductor sintered body 7
In this case, only the exposed surface is plated, and the surface solidified by the filler is not plated. That is, the filler 9 acts to partially mask the outer surface of the thermoelectric semiconductor sintered body 7.
【００２３】充填剤溶出工程 次に、メッキ処理が施された板状体１１を図３（ｄ）に
示すように充填剤除去液１３に浸し、充填剤９を溶出さ
せる。本実施形態例では、充填剤除去液として、Ｎ・Ｎ
・ＤＭＦを使用した。これにより板状体１１から充填剤
９が溶け出し、個々の熱電半導体焼結体チップ１４が取
り出される。この熱電半導体焼結体チップ１４は、上述
したように、熱電半導体素子としての大きさに形成され
ているため、そのまま冷却装置等に組み込むことが可能
である。また、メッキ工程において熱電半導体焼結体７
は充填剤により部分的にマスキングされているため、取
り出された熱電半導体焼結体チップ１４は、図３に示す
ようにその両端面１４ａ、１４ｂのみにメッキ皮膜が形
成されている。このため、熱電半導体焼結体チップ１４
を熱電変換素子として電極に結合させる際に、その両端
面１４ａ、１４ｂを電極に対向させ、この面で半田付け
を行えばよい。Next, as shown in FIG. 3D, the plate-like body 11 subjected to the plating treatment is immersed in a filler removing liquid 13 to elute the filler 9. In the present embodiment, N · N
-DMF was used. As a result, the filler 9 melts out of the plate-like body 11, and the individual thermoelectric semiconductor sintered body chips 14 are taken out. As described above, since the thermoelectric semiconductor sintered body chip 14 is formed in a size as a thermoelectric semiconductor element, it can be directly incorporated into a cooling device or the like. In the plating step, the thermoelectric semiconductor sintered body 7
Since is partially masked by the filler, the taken out thermoelectric semiconductor sintered body chip 14 has a plating film formed only on both end surfaces 14a and 14b as shown in FIG. Therefore, the thermoelectric semiconductor sintered body chip 14
Is bonded to the electrode as a thermoelectric conversion element, both end surfaces 14a and 14b may be opposed to the electrode, and soldering may be performed on this surface.
【００２４】[0024]
【発明の効果】請求項１の発明は、以下の如く効果を有
する。The invention of claim 1 has the following effects.
【００２５】熱電半導体を充填槽に投入し、充填槽内に
充填材を充填し（充填工程）、充填材を固化して固形混
合体とし（固化工程）、固形混合体を板状に切断して複
数の板状体を成形し（切断工程）、板状体にメッキ処理
を施し（メッキ工程）、メッキ処理が施された板状体を
充填材除去液に浸して充填材を溶出させて（充填剤溶出
工程）、熱電半導体素子を製造したので、従来必要であ
ったダイシング工程を行うことなく、材料を全て素子と
して製造でき、材料歩留りが向上する。The thermoelectric semiconductor is charged into a filling tank, the filling tank is filled with a filler (filling step), the filler is solidified into a solid mixture (solidification step), and the solid mixture is cut into a plate shape. To form a plurality of plate-like bodies (cutting step), apply plating treatment to the plate-like body (plating step), immerse the plated plate-like body in a filler removing liquid to elute the filler. (Filler elution step) Since the thermoelectric semiconductor element is manufactured, all the materials can be manufactured as an element without performing a dicing step which is conventionally required, and the material yield is improved.
【００２６】請求項２の発明は、以下の如く効果を有す
る。The invention of claim 2 has the following effects.
【００２７】熱電半導体を、長尺柱状の外形形状とし、
切断工程において、熱電半導体の長尺軸に対して垂直面
で切断するようにしたので、製造される素子の形状が常
に同じとなり、製品の信頼性が向上する。The thermoelectric semiconductor has a long columnar outer shape,
In the cutting step, since the thermoelectric semiconductor is cut on a plane perpendicular to the long axis, the shape of the manufactured element is always the same, and the reliability of the product is improved.
【００２８】請求項３の発明は、以下の如く効果を有す
る。The invention of claim 3 has the following effects.
【００２９】熱電半導体を、粉末化された熱電半導体結
晶粉末を加熱しつつ押し出して成形された熱電半導体焼
結体により構成した。押出成形により熱電半導体を製造
するので、長尺状の熱電半導体が容易に製造できる。The thermoelectric semiconductor was constituted by a thermoelectric semiconductor sintered body formed by extruding the powdered thermoelectric semiconductor crystal powder while heating it. Since a thermoelectric semiconductor is manufactured by extrusion, a long thermoelectric semiconductor can be easily manufactured.
【図１】本発明の実施形態例における、結晶合金作製工
程と粉末化工程を示す図である。FIG. 1 is a view showing a crystal alloy producing step and a powdering step in an embodiment of the present invention.
【図２】本発明の実施形態例における、熱間押出工程及
び熱間押出装置を示す図である。FIG. 2 is a view showing a hot extrusion step and a hot extrusion apparatus in an embodiment of the present invention.
【図３】本発明の実施形態例における、充填工程、固化
工程、切断工程、メッキ工程、充填剤溶出工程を示す図
である。FIG. 3 is a view showing a filling step, a solidification step, a cutting step, a plating step, and a filler elution step in the embodiment of the present invention.
【図４】熱電半導体素子と電極との結合状態を示す図で
ある。FIG. 4 is a diagram showing a coupling state between a thermoelectric semiconductor element and an electrode.
【図５】従来技術における、熱電半導体素子の製造工程
を示す図でる。FIG. 5 is a view showing a manufacturing process of a thermoelectric semiconductor element in a conventional technique.
１ 結晶合金 ２ 熱電半導体結晶粉末 ３ 熱間押出装置 ４ 金型、 ４ａ 出口孔 ５ プレートヒータ ６ パンチ ７ 熱電半導体焼結体 ８ 充填槽 ９ 充填剤 １０ 固形混合物 １１ 板状体 １２ メッキ槽 １３ 充填剤除去液 １４ 熱電半導体焼結体チップ DESCRIPTION OF SYMBOLS 1 Crystal alloy 2 Thermoelectric semiconductor crystal powder 3 Hot extrusion apparatus 4 Die, 4a Outlet hole 5 Plate heater 6 Punch 7 Thermoelectric semiconductor sintered body 8 Filling tank 9 Filler 10 Solid mixture 11 Plate-like body 12 Plating tank 13 Filler Removal liquid 14 Thermoelectric semiconductor sintered body chip
───────────────────────────────────────────────────── フロントページの続き (72)発明者 堀 野 勝 吉 愛知県刈谷市朝日町２丁目１番地 アイシ ン精機株式会社内 ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Katsuyoshi Horino 2-1-1 Asahi-cho, Kariya-shi, Aichi Pref. Aisin Seiki Co., Ltd.
Claims (3)
槽内に充填剤を充填する充填工程と、 前記充填剤を固化して固形混合体とする固化工程と、 前記固形混合体を板状に切断して複数の板状体を成形す
る切断工程と、 前記板状体にメッキ処理を施すメッキ工程と、 メッキ処理が施された前記板状体を充填剤除去液に浸し
て充填剤を溶出させる充填剤溶出工程と、 を備えることを特徴とする熱電変換素子の製造方法。A filling step of charging a thermoelectric semiconductor into a filling tank and filling the filling tank with a filler; a solidifying step of solidifying the filler to form a solid mixture; A cutting step of forming a plurality of plate-like bodies by cutting into a shape; a plating step of plating the plate-like body; and immersing the plated plate-like body in a filler removing liquid to obtain a filler. And a filler elution step of eluting the following.
て垂直面で切断することを特徴とする熱電変換素子の製
造方法。2. The thermoelectric semiconductor according to claim 1, wherein the thermoelectric semiconductor has a long columnar outer shape, and in the cutting step, the thermoelectric semiconductor is cut along a plane perpendicular to a long axis of the thermoelectric semiconductor. Of manufacturing a thermoelectric conversion element.
加熱しつつ押し出して成形された熱電半導体焼結体であ
ることを特徴とする熱電変換素子の製造方法。3. The method of manufacturing a thermoelectric conversion element according to claim 2, wherein the thermoelectric semiconductor is a thermoelectric semiconductor sintered body formed by extruding a thermoelectric semiconductor crystal powder that is powdered while heating. .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21110996A JP3591150B2 (en) | 1996-08-09 | 1996-08-09 | Manufacturing method of thermoelectric conversion element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21110996A JP3591150B2 (en) | 1996-08-09 | 1996-08-09 | Manufacturing method of thermoelectric conversion element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH1056211A true JPH1056211A (en) | 1998-02-24 |
| JP3591150B2 JP3591150B2 (en) | 2004-11-17 |
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ID=16600565
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21110996A Expired - Fee Related JP3591150B2 (en) | 1996-08-09 | 1996-08-09 | Manufacturing method of thermoelectric conversion element |
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| Country | Link |
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| JP (1) | JP3591150B2 (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006090626A (en) * | 2004-09-24 | 2006-04-06 | National Institute Of Advanced Industrial & Technology | Sintering device, and method of manufacturing sintered body |
| CN103413888A (en) * | 2013-08-21 | 2013-11-27 | 电子科技大学 | Pouring-type thermoelectric device and manufacturing method thereof |
| KR20170127992A (en) * | 2016-05-13 | 2017-11-22 | 티엠에스테크 주식회사 | Method for manufacturing semiconductor of thermoelectric module, semiconductor of thermoelectric module and thermoelectric modulef using the same |
| KR101875902B1 (en) * | 2016-05-13 | 2018-07-06 | 티엠에스테크 주식회사 | Thermoelectric module and method for manufacturing thermoelectric module |
| CN110678993A (en) * | 2017-03-07 | 2020-01-10 | 马勒国际有限公司 | Method for producing a thermoelectric module |
-
1996
- 1996-08-09 JP JP21110996A patent/JP3591150B2/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006090626A (en) * | 2004-09-24 | 2006-04-06 | National Institute Of Advanced Industrial & Technology | Sintering device, and method of manufacturing sintered body |
| CN103413888A (en) * | 2013-08-21 | 2013-11-27 | 电子科技大学 | Pouring-type thermoelectric device and manufacturing method thereof |
| CN103413888B (en) * | 2013-08-21 | 2015-11-04 | 电子科技大学 | A kind of casting type thermoelectric device and preparation method thereof |
| KR20170127992A (en) * | 2016-05-13 | 2017-11-22 | 티엠에스테크 주식회사 | Method for manufacturing semiconductor of thermoelectric module, semiconductor of thermoelectric module and thermoelectric modulef using the same |
| KR101875902B1 (en) * | 2016-05-13 | 2018-07-06 | 티엠에스테크 주식회사 | Thermoelectric module and method for manufacturing thermoelectric module |
| CN110678993A (en) * | 2017-03-07 | 2020-01-10 | 马勒国际有限公司 | Method for producing a thermoelectric module |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3591150B2 (en) | 2004-11-17 |
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