JPH11340530A - Manufacture of thermoelectric semiconductor sintered element - Google Patents

Abstract

PROBLEM TO BE SOLVED: To improve the production efficiency by extruding a thermoelectric semiconductor crystal while heating it to thereby form a plurality of thermoelectric semiconductor sintered elements in the form of continuous bodies, and by bonding the thus formed plurality of thermoelectric semiconductor sintered elements together using a resin to thereby form a single resin block. SOLUTION: A thermoelectric semiconductor sintered body molding device 10 is equipped with a mold 14. A total of 16 charging chambers 15 are obtained to form a matrix within the mold 14. A crystalline powder, which is a raw material for the preparation of sintered bodies for P-type thermoelectric semiconductors, and a crystalline powder, which is a raw material for the preparation of sintered bodies for N-type thermoelectric semiconductors are charged into the two adjacent chambers 15. The mold 14 is heated by a heater 19, and punches 15 respectively provided for the chambers 15 are lowered by a moving body 17. As a result, the thermoelectric semiconductor crystalline powders are extruded downwards while being heated, and thermoelectric sintered bodies 17 are formed as a plurality of continuous bodies from outlets 14 of the mold 14. Then, such formed bodies 17 are bonded together, using a resin 23 to thereby form a single piece of resin block.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[0001] The present invention relates to a method for manufacturing a sintered thermoelectric semiconductor device.

[0002]

2. Description of the Related Art A conventional thermoelectric semiconductor composition, for example, a thermoelectric semiconductor composition disclosed in Japanese Patent Application Laid-Open No. Hei 10-056210, comprises a powdering step of powdering thermoelectric semiconductor crystals, After being extruded by the hot extrusion step and the hot extrusion step of forming the thermoelectric semiconductor sintered body by extruding the conductive semiconductor crystal while heating, it is used as a thermoelectric semiconductor element through a cutting step and a plating step, which are subsequent steps. .

[0003]

However, the thermoelectric semiconductor element is usually manufactured as a pair of a P-type and an N-type. However, the thermoelectric semiconductor sintered body formed in the above-mentioned hot extrusion step is: One. Therefore, when manufacturing a pair of thermoelectric semiconductor elements, the thermoelectric semiconductor sintered body for one mold and the thermoelectric semiconductor sintered body for the other mold had to be separately molded, and the production efficiency was not good. .

Therefore, an object of the present invention is to provide a method for producing a thermoelectric semiconductor sintered body that does not cause such a problem.

[0005]

In order to solve the above-mentioned problems, a measure taken in claim 1 is hot extrusion in which a thermoelectric semiconductor crystal is extruded while being heated and a plurality of thermoelectric semiconductor sintered elements are fed out as a continuous body. A method for manufacturing a thermoelectric semiconductor sintered element, comprising a step of forming a single resin block by connecting the plurality of thermoelectric semiconductor sintered elements fed from the hot extrusion step with a resin. It was done.

[0006]

In the structure of the first aspect,
Since the number of the thermoelectric semiconductor sintered bodies to be drawn out is plural, if the number is set to two, the thermoelectric semiconductor sintered bodies for the P-type thermoelectric semiconductor element and the thermoelectric semiconductor sintered bodies for the N-type thermoelectric semiconductor element are set. The body can be molded at the same time, and the production efficiency is greatly improved.

[0007]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of the present invention will be described with reference to the accompanying drawings.

As shown in FIG. 1, a thermoelectric semiconductor sintered compact forming apparatus 10 includes a mold 14. And mold 14
A heater 19 is installed on the outer surface of the mold, and the mold 14 is heated to 400 degrees Celsius.

Further, 16 filling chambers 15 are formed in the mold 14 so as to form a 4 × 4 matrix, and two adjacent filling chambers 15 have a P-type thermoelectric semiconductor. And a crystal powder as a raw material of a sintered body for an N-type thermoelectric semiconductor.

When the temperature of the mold 14 is raised to 450 degrees Celsius, the punch 16 prepared for each filling chamber 15 is moved downward by a moving body 17 driven by a driving means (not shown). The downward punch 16 applies a pressing force (10 tons per square centimeter) to the thermoelectric semiconductor crystal powder 12 filled in the filling chamber 15 of the mold 14.

Thus, the thermoelectric semiconductor crystal powder 12 is extruded downward while being heated, and exits from the exit 14 a of the mold 14.
, A thermoelectric semiconductor sintered body 17 used as a P-type / N-type thermoelectric semiconductor is fed out as 16 continuous bodies (hot extrusion step).

Thus, a solidifying device 20 is provided below the mold 14. The solidifying device 20 is formed with a working chamber 21 through which the 16 thermoelectric semiconductor sintered bodies 17 that are fed out and descend are passed, and a liquid resin 23 is pressure-fed into the working chamber 21 from a reservoir (not shown). In the working chamber 21, the 16 descending thermoelectric semiconductor sintered bodies 17 are connected via a resin, so that the supply of the resin into the working chamber 21 is temporarily stopped and the working chamber 21 is solidified. When the resin 23 and the 16 thermoelectric semiconductor sintered bodies 17 hanging in the state are cut in the horizontal direction, a resin block 24 in which 16 thermoelectric semiconductor sintered bodies 17 are integrated is obtained.

Then, the resin block 24 is further cut into thin pieces and then put into a plating tank, and the thermoelectric semiconductor sintered body 17 is cut.
If both ends are plated and the resin is further removed, a thermoelectric semiconductor element can be obtained. Since the steps after this cutting step have been described in detail in the above-mentioned prior art, further description will be omitted.

As shown in FIG. 3, a nylon case 26 filled with resin at a predetermined distance below the mold 14 is provided.
The 16 thermoelectric semiconductor sintered bodies 17 fed out are immersed in the resin 23 to a predetermined depth, and thereafter,
The 16 thermoelectric semiconductor sintered bodies 17 are cut in the horizontal direction,
The resin block 25 may be formed. Then, the resin block 25 may be put into a thermostat 27 as shown in the figure to remove the nylon, and thereafter, a thermoelectric semiconductor element may be obtained by the procedure described in the preceding paragraph.

[Brief description of the drawings]

FIG. 1 is a view showing a manufacturing process of a thermoelectric semiconductor sintered element.

FIG. 2 is a schematic perspective view of a resin block obtained in the process shown in FIG.

FIG. 3 is a diagram showing another manufacturing process of the thermoelectric semiconductor sintered element.

[Explanation of symbols]

 14 Mold 17 Thermoelectric semiconductor sintered element 23 Resin 24 Resin block 25 Resin block 26 Nylon case 27 Thermostat

Continuing on the front page (72) Inventor Satoshi Hori 2-1-1 Asahi-cho, Kariya-shi, Aichi Aisin Seiki Co., Ltd. (72) Inventor Masayoshi Ando 2-1-1 Asahi-cho, Kariya-shi, Aichi Aisin Seiki Co., Ltd.

Claims (1)

[Claims] 1. A hot extrusion step in which a thermoelectric semiconductor crystal is extruded while being heated and a plurality of thermoelectric semiconductor sintered elements are fed out as a continuous body, and the plurality of thermoelectric semiconductor sintered elements fed out from the hot extrusion step A method for manufacturing a thermoelectric semiconductor sintered element, comprising: a molding step of molding a resin block by connecting the resin blocks with resin.