JPH1046368A - Solder removing solution - Google Patents
Solder removing solutionInfo
- Publication number
- JPH1046368A JPH1046368A JP21689296A JP21689296A JPH1046368A JP H1046368 A JPH1046368 A JP H1046368A JP 21689296 A JP21689296 A JP 21689296A JP 21689296 A JP21689296 A JP 21689296A JP H1046368 A JPH1046368 A JP H1046368A
- Authority
- JP
- Japan
- Prior art keywords
- solder
- soln
- derivative
- fluoride
- hydrogen
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/44—Compositions for etching metallic material from a metallic material substrate of different composition
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
- H05K3/067—Etchants
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Weting (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- ing And Chemical Polishing (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】この発明は、はんだ剥離法を
採用するプリント回路基板の製造等に用いるはんだ剥離
液、詳しくは、フッ化鉛等の水に不溶性のスラッジの発
生が少なく、また、半導体製造に際して廃出される半導
体製造廃液を利用することができるはんだ剥離液に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solder stripping solution used for manufacturing a printed circuit board employing a solder stripping method, and more particularly to a method which generates less water-insoluble sludge such as lead fluoride and a semiconductor. The present invention relates to a solder stripper that can use a semiconductor manufacturing waste liquid that is discharged during manufacturing.
【０００２】[0002]
【従来の技術】従来、はんだ剥離法を採用するプリント
回路基板の製造に際しては、二フッ化水素アンモニウム
（ＮＨ4 Ｆ・ＨＦ）と過酸化水素（Ｈ2 Ｏ2 ）を混合し
たはんだ剥離液を用い、エッチングレジストとなったは
んだめっきを剥離している。2. Description of the Related Art Conventionally, when manufacturing a printed circuit board employing a solder stripping method, a solder stripping solution obtained by mixing ammonium hydrogen difluoride (NH 4 F.HF) and hydrogen peroxide (H 2 O 2 ) is used. The solder plating used as the etching resist was peeled off.
【０００３】[0003]
【発明が解決しようとする課題】しかしながら、上述し
たはんだ剥離液にあっては、はんだの溶解力が約５０ｇ
／ｌと小さいため、はんだの剥離に際して多量の液が必
要で、産業廃液の量も多くなり環境汚染の防止のための
負担が大きいという問題があった。また、上述したはん
だ剥離液は、はんだ中の鉛の溶解に伴いフッ化鉛（Ｐｂ
Ｆ2 ）等の水に不溶のスラッジが発生するため、装置に
頻繁なメンテナンスが求められるという問題もあった。
この発明は、上記問題に鑑みなされたもので、半導体製
造廃液を利用でき全体的な廃液を少なくでき、また、は
んだの溶解に伴うスラッジの発生が少ないはんだ剥離液
を提供することを目的とする。However, the above-mentioned solder stripper has a solder dissolving power of about 50 g.
Since it is as small as / l, a large amount of liquid is required at the time of peeling of the solder, the amount of industrial waste liquid is increased, and there is a problem that the burden for preventing environmental pollution is large. In addition, the above-mentioned solder stripping solution contains lead fluoride (Pb) as lead in the solder dissolves.
Since insoluble sludge is generated in water such as F 2 ), frequent maintenance is required for the apparatus.
The present invention has been made in view of the above problems, and an object of the present invention is to provide a solder stripping solution that can utilize semiconductor manufacturing waste liquid, can reduce the entire waste liquid, and generate less sludge due to melting of solder. .
【０００４】[0004]
【課題を解決するための手段】上記目的を達成するた
め、請求項１に記載の発明にかかるはんだ剥離液は、フ
ッ化アンモニウム（ＮＨ4 Ｆ）と、フッ化水素（ＨＦ）
または二フッ化水素アンモニウム（ＮＨ4 Ｆ・ＨＦ）の
少なくとも一方と、過酸化水素（Ｈ2 Ｏ2 ）と、硝酸
（ＨＮＯ3 ）と、スルフォン酸群の中から選ばれた少な
くとも１つのスルフォン酸若しくは誘導体あるいはこれ
らの塩（例えば、ＨＯＳＯ2 ＣＨ3 、以下、スルフォン
酸で代表する）と、を含んで構成される。In order to achieve the above object, a solder stripper according to the present invention comprises ammonium fluoride (NH 4 F) and hydrogen fluoride (HF).
Alternatively, at least one of ammonium hydrogen difluoride (NH 4 F.HF), hydrogen peroxide (H 2 O 2 ), nitric acid (HNO 3 ), and at least one sulfonic acid selected from a sulfonic acid group Or a derivative thereof or a salt thereof (for example, HOSO 2 CH 3 ; hereinafter, represented by sulfonic acid).
【０００５】また、請求項２に記載の発明にかかるはん
だ剥離液は、フッ化アンモニウムを含む半導体製造廃液
に、フッ化水素または二フッ化水素アンモニウムの少な
くとも一方と、過酸化水素と、硝酸と、スルフォン酸群
の中から選ばれた少なくとも１つのスルフォン酸若しく
は誘導体あるいはこれらの塩（以下、スルフォン酸で代
表する）とを配合して構成される。[0005] In addition, the solder stripper according to the second aspect of the present invention is characterized in that a semiconductor manufacturing waste liquid containing ammonium fluoride contains at least one of hydrogen fluoride and ammonium hydrogen difluoride, hydrogen peroxide, and nitric acid. And at least one sulfonic acid or a derivative selected from a group of sulfonic acids or a salt thereof (hereinafter, represented by sulfonic acid).
【０００６】そして、この発明にかかるはんだ剥離液
は、アゾール群の中から選ばれた少なくとも１つのアゾ
ール若しくはその誘導体（以下、アゾールで代表する）
と、少なくとも１種の塩化物を加えた態様（請求項３）
に構成でき、また、ポリアミン群の中から選ばれた少な
くとも１つのポリアミン若しくはその誘導体（以下、ポ
リアミンで代表する）を加えた態様（請求項３）に構成
することができる。[0006] The solder stripper according to the present invention comprises at least one azole selected from the group of azoles or a derivative thereof (hereinafter, represented by azole).
And at least one chloride added (Claim 3)
In addition, it can be configured in an embodiment (claim 3) to which at least one polyamine selected from a polyamine group or a derivative thereof (hereinafter, represented by a polyamine) is added.
【０００７】半導体製造廃液は、ウェハのエッチング液
や洗浄液等であって、下記の表１に示すようなフッ化ア
ンモニウムを含む組成のものが用いられる。The semiconductor manufacturing waste liquid is a wafer etching liquid, a cleaning liquid, or the like, and has a composition containing ammonium fluoride as shown in Table 1 below.
【表１】 [Table 1]
【０００８】フッ化水素と二フッ化水素アンモニウム
は、いずれか一方あるいは適当な比率で双方を配合し、
いずれを配合するかの選択と双方を配合する場合の比率
がフッ化アンモニウムの含有量に応じて決定される。過
酸化水素はフッ化アンモニウム等の含有量に応じてその
配合量が決定される。硝酸とスルフォン酸は組み合わせ
て配合される。スルフォン酸としてはメタンスルフォン
酸（ＨＯＳＯ2 ＣＨ3 ）等が用いられる。[0008] Either hydrogen fluoride and ammonium hydrogen difluoride are blended together or in an appropriate ratio.
The choice of which one to mix and the ratio of mixing both are determined according to the content of ammonium fluoride. The amount of hydrogen peroxide is determined according to the content of ammonium fluoride and the like. Nitric acid and sulfonic acid are combined and compounded. Methanesulfonic acid (HOSO 2 CH 3 ) or the like is used as the sulfonic acid.
【０００９】請求項３と請求項４に記載のはんだ剥離液
は、銅面上のはんだのみを選択的に剥離する場合に使用
する。アゾールと塩化物は組み合わせて配合され、ま
た、ポリアミンは塩化ナトリウムを含む誘導体として、
若しくは、塩化ナトリウム等の塩化物と組み合わせて配
合される。アゾールとしてはベンゾトリアゾールまたは
その誘導体が好ましく、また、ポリアミンとしては塩化
ナトリウムを含む誘導体が好ましい。The solder stripper according to the third and fourth aspects is used for selectively stripping only the solder on the copper surface. Azole and chloride are combined, and polyamine is a derivative containing sodium chloride.
Alternatively, it is blended with a chloride such as sodium chloride. Benzotriazole or a derivative thereof is preferable as the azole, and a derivative containing sodium chloride is preferable as the polyamine.
【００１０】[0010]
【作用】この発明にかかるはんだ剥離液は、はんだ中の
すずＳｎを水溶性のフッ化すずＳｎＦ2 として、また、
鉛Ｐｂをフッ化鉛ＰｂＦ2 とした後に水溶性の硝酸鉛Ｐ
ｂ（ＮＯ3 ）として剥離（溶解）させるため、液中にス
ラッジが堆積することがなく、装置のメンテナンス負担
が軽減される。特に、請求項２に記載のはんだ剥離液
は、半導体製造廃液を利用するため、全体として廃出さ
れる廃液を少なくでき、環境汚染を防止するための負担
が軽減される。The solder stripper according to the present invention converts tin Sn in solder into water-soluble tin fluoride SnF 2 ,
After converting lead Pb to lead fluoride PbF 2 , water-soluble lead nitrate P
Since it is stripped (dissolved) as b (NO 3 ), sludge does not accumulate in the liquid, and the maintenance burden on the apparatus is reduced. In particular, since the solder stripping liquid according to the second aspect uses semiconductor manufacturing waste liquid, the amount of waste liquid discharged as a whole can be reduced, and the burden of preventing environmental pollution is reduced.
【００１１】そして、請求項３に記載のはんだ剥離液は
アゾールと塩化物を配合するため、また、請求項４に記
載のはんだ剥離液はポリアミンを配合するため、これら
により銅表面に保護膜を形成して銅表面上のはんだのみ
を選択的に剥離できる。The solder stripper according to the third aspect contains an azole and a chloride, and the solder stripper according to the fourth aspect contains a polyamine. Once formed, only the solder on the copper surface can be selectively stripped.
【００１２】[0012]
【実施例】以下、この発明の実施例を説明する。 ・実施例１ 前述した表１の半導体製造廃液を用いて表２に示すはん
だ剥離液を作成した。そして、エポキシ樹脂銅張積層板
の銅表面に約８μｍの厚さではんだめっきを施した試験
片を作成し、この試験片を２５°Ｃに保持した上記はん
だ剥離液で３０秒間処理した。この後、この試験片を処
理後に水洗、乾燥して表面を観察したところ、試験片の
処理部分ははんだめっきのみが選択的に除去剥離された
ことが確認された。Embodiments of the present invention will be described below. Example 1 A solder stripper shown in Table 2 was prepared using the semiconductor manufacturing waste liquid shown in Table 1 described above. Then, a test piece was prepared by applying a solder plating with a thickness of about 8 μm on the copper surface of the epoxy resin copper-clad laminate, and this test piece was treated with the above-mentioned solder stripper kept at 25 ° C. for 30 seconds. Thereafter, the test piece was washed with water after treatment, dried, and the surface was observed. As a result, it was confirmed that only the solder plating was selectively removed and peeled from the treated portion of the test piece.
【００１３】[0013]
【表２】 [Table 2]
【００１４】・実施例２ 前述した表１の半導体製造廃液を用いて表３に示すはん
だ剥離液を作成した。また、銅厚が５０μｍのエポキシ
樹脂銅張積層板の銅表面に約８μｍの厚さではんだめっ
きを施した試験片を作成した。そして、はんだ剥離液を
４５°Ｃに保持して試験片の表面を１２分間処理した。
この後、試験片を水洗、乾燥して表面を観察したとこ
ろ、試験片は処理部分の銅とはんだめっきがともに剥離
されていることが確認された。Example 2 A solder stripper shown in Table 3 was prepared using the semiconductor manufacturing waste liquid described in Table 1 described above. Further, a test piece was prepared by applying a solder plating with a thickness of about 8 μm to the copper surface of an epoxy resin copper-clad laminate having a copper thickness of 50 μm. Then, the surface of the test piece was treated for 12 minutes while maintaining the solder stripper at 45 ° C.
Thereafter, the test piece was washed with water and dried, and the surface was observed. As a result, it was confirmed that both the copper and the solder plating in the treated portion of the test piece were peeled off.
【００１５】[0015]
【表３】 [Table 3]
【００１６】なお、上述した実施例１にかかるはんだ剥
離液は、アゾールと塩化ナトリウムを加えるが、これら
に代えてポリアミンの誘導体あるいはポリアミンと塩化
ナトリウムを加えることも可能である。Although the azole and sodium chloride are added to the solder stripper according to the first embodiment, a polyamine derivative or a polyamine and sodium chloride can be added instead.
【００１７】[0017]
【発明の効果】以上説明したように、請求項１に記載の
発明にかかるはんだ剥離液によれば、フッ化アンモニウ
ム、フッ化水素（二フッ化水素アンモニウム）、過酸化
水素、硝酸、スルフォン酸を含むため、スラッジの発生
量を極めて少なくでき、装置のメンテナンスの簡素化を
図れる。特に、請求項２に記載の発明にかかるはんだ剥
離液は、半導体製造廃液を用い、この半導体製造廃液か
らフッ化アンモニウムを得るため、半導体製造と基板の
製造とを含めた全体としての廃液量を少なくでき、環境
汚染防止のための負担を軽減できる。As described above, according to the solder stripper according to the first aspect of the present invention, ammonium fluoride, hydrogen fluoride (ammonium hydrogen difluoride), hydrogen peroxide, nitric acid, and sulfonic acid are used. , The amount of sludge generated can be extremely reduced, and the maintenance of the apparatus can be simplified. In particular, the solder stripper according to the second aspect of the present invention uses a semiconductor manufacturing waste liquid, and obtains ammonium fluoride from the semiconductor manufacturing waste liquid. Therefore, the total amount of the waste liquid including semiconductor manufacturing and substrate manufacturing is reduced. It can be reduced, and the burden for preventing environmental pollution can be reduced.
【００１８】また、請求項３に記載の発明にかかるはん
だ剥離液はアゾールと塩化物を配合するため、請求項４
に記載の発明にかかるはんだ剥離液はポリアミンを配合
するため、銅上のはんだを銅を溶解することなく選択的
に溶解、剥離できる。Further, the solder stripper according to the third aspect of the present invention contains an azole and a chloride.
Since the solder stripper according to the invention described in (1) contains a polyamine, the solder on copper can be selectively dissolved and stripped without dissolving the copper.
フロントページの続き (51)Int.Cl.6 識別記号 庁内整理番号 ＦＩ 技術表示箇所 Ｈ０１Ｌ 21/304 ３４１ Ｈ０１Ｌ 21/30 ５７２Ｂ 21/306 21/306 Ｚ Continued on the front page (51) Int.Cl. 6 Identification number Agency reference number FI Technical display location H01L 21/304 341 H01L 21/30 572B 21/306 21/306 Z
Claims (4)
は二フッ化水素アンモニウムの少なくとも一方と、過酸
化水素と、硝酸と、スルフォン酸群の中から選ばれた少
なくとも１つのスルフォン酸若しくは誘導体あるいはこ
れらの塩と、を含むことを特徴とするはんだ剥離液。1. An ammonium fluoride, at least one of hydrogen fluoride and ammonium hydrogen difluoride, hydrogen peroxide, nitric acid, and at least one sulfonic acid or a derivative selected from a group of sulfonic acids, or a derivative thereof. And a salt of the above.
液に、フッ化水素または二フッ化水素アンモニウムの少
なくとも一方と、過酸化水素と、硝酸と、スルフォン酸
群の中から選ばれた少なくとも１つのスルフォン酸若し
くは誘導体あるいはこれらの塩と、を配合してなること
を特徴とするはんだ剥離液。2. A semiconductor manufacturing waste liquid containing ammonium fluoride, wherein at least one of hydrogen fluoride or ammonium hydrogen difluoride, hydrogen peroxide, nitric acid, and at least one sulfone selected from the group of sulfonic acids. A solder stripping solution characterized by comprising an acid, a derivative, or a salt thereof.
１つのアゾール若しくはその誘導体と、少なくとも１種
の塩化物を加えた請求項１または請求項２に記載のはん
だ剥離液。3. The solder stripper according to claim 1, wherein at least one azole selected from the group of azoles or a derivative thereof and at least one chloride are added.
も１つのポリアミン若しくはその誘導体を加えた請求項
１または請求項２に記載のはんだ剥離液。4. The solder stripper according to claim 1, wherein at least one polyamine selected from a polyamine group or a derivative thereof is added.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21689296A JPH1046368A (en) | 1996-07-31 | 1996-07-31 | Solder removing solution |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21689296A JPH1046368A (en) | 1996-07-31 | 1996-07-31 | Solder removing solution |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH1046368A true JPH1046368A (en) | 1998-02-17 |
Family
ID=16695558
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21689296A Pending JPH1046368A (en) | 1996-07-31 | 1996-07-31 | Solder removing solution |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH1046368A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006066533A (en) * | 2004-08-25 | 2006-03-09 | Kanto Chem Co Inc | Composition for removing photoresist residue and polymer residue and method of removing residue using it |
| CN103934536A (en) * | 2014-05-12 | 2014-07-23 | 上海第二工业大学 | Method for disassembling welded components of waste printed circuit board |
| CN104625286A (en) * | 2015-01-23 | 2015-05-20 | 上海第二工业大学 | Waste printed circuit board wet-type disassembling method |
-
1996
- 1996-07-31 JP JP21689296A patent/JPH1046368A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006066533A (en) * | 2004-08-25 | 2006-03-09 | Kanto Chem Co Inc | Composition for removing photoresist residue and polymer residue and method of removing residue using it |
| CN103934536A (en) * | 2014-05-12 | 2014-07-23 | 上海第二工业大学 | Method for disassembling welded components of waste printed circuit board |
| CN104625286A (en) * | 2015-01-23 | 2015-05-20 | 上海第二工业大学 | Waste printed circuit board wet-type disassembling method |
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