JPS6211070B2 - - Google Patents
Info
- Publication number
- JPS6211070B2 JPS6211070B2 JP55161401A JP16140180A JPS6211070B2 JP S6211070 B2 JPS6211070 B2 JP S6211070B2 JP 55161401 A JP55161401 A JP 55161401A JP 16140180 A JP16140180 A JP 16140180A JP S6211070 B2 JPS6211070 B2 JP S6211070B2
- Authority
- JP
- Japan
- Prior art keywords
- copper
- hydrogen peroxide
- thin film
- nickel thin
- acid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 56
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 30
- 229910052759 nickel Inorganic materials 0.000 claims description 28
- 238000005530 etching Methods 0.000 claims description 25
- 239000010409 thin film Substances 0.000 claims description 23
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 16
- 239000003795 chemical substances by application Substances 0.000 claims description 13
- -1 chlorine ions Chemical class 0.000 claims description 9
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 8
- 239000000460 chlorine Substances 0.000 claims description 8
- 229910052801 chlorine Inorganic materials 0.000 claims description 8
- 239000002253 acid Substances 0.000 claims description 6
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 4
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 3
- 229910017604 nitric acid Inorganic materials 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 29
- 229910052802 copper Inorganic materials 0.000 description 29
- 239000010949 copper Substances 0.000 description 29
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 8
- 239000007921 spray Substances 0.000 description 8
- 230000007797 corrosion Effects 0.000 description 6
- 238000005260 corrosion Methods 0.000 description 6
- 238000004090 dissolution Methods 0.000 description 6
- NQRYJNQNLNOLGT-UHFFFAOYSA-N Piperidine Chemical compound C1CCNCC1 NQRYJNQNLNOLGT-UHFFFAOYSA-N 0.000 description 4
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 4
- 235000019270 ammonium chloride Nutrition 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000007654 immersion Methods 0.000 description 3
- QLNJFJADRCOGBJ-UHFFFAOYSA-N propionamide Chemical compound CCC(N)=O QLNJFJADRCOGBJ-UHFFFAOYSA-N 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 239000002202 Polyethylene glycol Substances 0.000 description 2
- 150000007513 acids Chemical class 0.000 description 2
- 150000001805 chlorine compounds Chemical class 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- XEMZLVDIUVCKGL-UHFFFAOYSA-N hydrogen peroxide;sulfuric acid Chemical compound OO.OS(O)(=O)=O XEMZLVDIUVCKGL-UHFFFAOYSA-N 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229920001223 polyethylene glycol Polymers 0.000 description 2
- 239000011780 sodium chloride Substances 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 150000001735 carboxylic acids Chemical class 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000001493 electron microscopy Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- 150000002466 imines Chemical class 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910001510 metal chloride Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 150000002989 phenols Chemical class 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 102000004169 proteins and genes Human genes 0.000 description 1
- 108090000623 proteins and genes Proteins 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/28—Acidic compositions for etching iron group metals
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/44—Compositions for etching metallic material from a metallic material substrate of different composition
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
- H05K3/067—Etchants
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- ing And Chemical Polishing (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
Description
【発明の詳細な説明】
本発明はニツケル薄膜のエツチング剤に関する
ものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an etching agent for nickel thin films.
現在、一般的に用いられているプリント基板
は、数十ミクロンの銅張積層板上にハンダあるい
はフオトレジスト等でパターンエツチングレジス
トを施し、レジストにより被覆されていない部分
の銅を種々の方法により溶解除去して目的とする
銅回路パターンを得ている。しかし、多量の銅を
溶解除去しなければならない等の不利益な点も多
く、このため最近、プリント基板の作成について
も種々の改良開発が行われている。その一つに基
板に直接無電解ニツケルメツキを行い、ニツケル
薄膜を形成させ、その表面に数十ミクロンの銅回
路パターンのみを設けたプリント基板がある。 Currently, commonly used printed circuit boards are made by applying a pattern etching resist using solder or photoresist on a copper-clad laminate with a thickness of several tens of microns, and then dissolving the copper in the areas not covered by the resist using various methods. The desired copper circuit pattern is obtained by removing it. However, there are many disadvantages such as the need to melt and remove a large amount of copper, and for this reason, various improvements and developments have recently been made in the production of printed circuit boards. One of these is a printed circuit board in which electroless nickel plating is performed directly on the substrate to form a nickel thin film, and only a copper circuit pattern of several tens of microns is provided on the surface of the nickel thin film.
このような基板のエツチングは、銅パターンに
よつて被覆されていないニツケル薄膜を溶解除去
することが目的となるが、銅パターン上にはエツ
チングレジストが存在しないために、銅パターン
の浸蝕を極力抑制しニツケル薄膜のみを溶解除去
する選択的エツチングが要求される。上記プリン
ト基板の銅パターンの一部を必要によりスズやハ
ンダ等でレジストすることもあるが、このような
基板も当然、ニツケル薄膜のみを溶解する選択的
エツチングが要求されることは勿論である。 The purpose of etching such a substrate is to dissolve and remove the nickel thin film that is not covered by the copper pattern, but since there is no etching resist on the copper pattern, corrosion of the copper pattern is suppressed as much as possible. Selective etching is required to dissolve and remove only the nickel thin film. A portion of the copper pattern on the printed circuit board may be resisted with tin, solder, etc. if necessary, but it goes without saying that such a board also requires selective etching to dissolve only the nickel thin film.
銅のエツチング剤として性能、非環境汚染など
の観点から賞用されている硫酸―過酸化水素系エ
ツチング剤は、また無電解ニツケルの良き溶解剤
であることも知られているが、一般的な硫酸―過
酸化水素系エツチング剤では、ニツケル薄膜のエ
ツチングとともに銅パターン部の著しい浸蝕も同
時に進行するために、本発明の目的とするニツケ
ル薄膜のみの選択的エツチング剤としては使用出
来ない。本発明者は酸―過酸化水素系で、ニツケ
ル薄膜のみをエツチングする選択的エツチング剤
にいつて鋭意検討した結果、酸―過酸化水素溶液
に遊離塩素イオンを共存させると銅パターン部の
浸蝕を実質的に無視し得る程度に抑制し、かつニ
ツケル薄膜を速やかに溶解除去出来ることを見出
し、本発明を完成した。 The sulfuric acid-hydrogen peroxide based etching agent, which has been praised for its performance and non-environmental pollution as a copper etching agent, is also known to be a good dissolving agent for electroless nickel. A sulfuric acid-hydrogen peroxide based etching agent cannot be used as a selective etching agent for only the nickel thin film, which is the object of the present invention, because it etches the nickel thin film and causes severe corrosion of the copper pattern at the same time. As a result of extensive research into a selective etching agent based on acid-hydrogen peroxide that etches only the nickel thin film, the inventor found that when free chlorine ions coexist in the acid-hydrogen peroxide solution, corrosion of the copper pattern area is reduced. The present invention was completed based on the discovery that the nickel thin film can be rapidly dissolved and removed while suppressing the damage to a substantially negligible level.
即ち、本発明は硫酸、硝酸およびリン酸からな
る群から選ばれた少なくとも１種の酸と過酸化水
素とを主成分とする溶液に遊離塩素イオンを共存
させることを特徴とする銅回路パターンを有する
無電解ニツケル薄膜用エツチング剤である。 That is, the present invention provides a copper circuit pattern characterized in that free chlorine ions are allowed to coexist in a solution whose main components are hydrogen peroxide and at least one acid selected from the group consisting of sulfuric acid, nitric acid, and phosphoric acid. This is an etching agent for electroless nickel thin films.
本発明で使用する酸、過酸化水素および遊離塩
素イオンの濃度範囲は、それぞれ0.1〜50重量
％、0.1〜50重量％および２〜20000ppmであり、
処理温度は５〜60℃である。２種以上の酸を組み
合せて使用する場合は、酸全体としての濃度が
0.1〜50重量％の範囲であることを意味する。各
成分の濃度および処理温度の設定は、ニツケル薄
膜の厚さ、許容される銅パターン部の溶解量およ
び希望する処理時間等によつて自由に選択するこ
とが出来るが、操作性等の観点から、酸、過酸化
水素および遊離塩素イオンの好ましい濃度範囲
は、それぞれ１〜30重量％、１〜30重量％および
５〜5000ppmであり、また好ましい処理温度
は、10〜40℃である。 The concentration ranges of acid, hydrogen peroxide and free chlorine ions used in the present invention are 0.1-50% by weight, 0.1-50% by weight and 2-20000ppm, respectively;
The processing temperature is 5-60°C. When using a combination of two or more acids, the overall concentration of the acids
Means a range of 0.1 to 50% by weight. The concentration of each component and the treatment temperature settings can be freely selected depending on the thickness of the nickel thin film, the allowable amount of dissolution of the copper pattern, the desired treatment time, etc., but from the viewpoint of operability etc. The preferred concentration ranges of , acid, hydrogen peroxide and free chlorine ions are 1-30% by weight, 1-30% by weight and 5-5000 ppm, respectively, and the preferred processing temperature is 10-40°C.
本発明に使用する遊離塩素イオンを提供する物
質としては、水可溶性の塩化物あるいは実質的に
溶液中で塩素イオンを遊離する無機、有機化合物
等広範に亘るが、特に望まない限り、過酸化水素
の分解に対して不活性な塩化物を使用することが
望ましく、この意味からもごく一般的な塩化物で
ある塩化ナトリウム、塩化カリウム、塩化アンモ
ニウム、塩化アルミニウム、塩化マグネシウムお
よび塩酸等が適当である。過酸化水素の分解触媒
となる金属の塩化物や銅パターン表面への析出を
おこすような銅よりイオン化傾向の貴なる金属の
塩化物の使用は、出来るだけ避けることが望まし
い。 Substances that provide free chloride ions used in the present invention include a wide range of substances, including water-soluble chloride and inorganic and organic compounds that substantially release chloride ions in solution. It is desirable to use chlorides that are inert to the decomposition of . It is desirable to avoid as much as possible the use of metal chlorides that act as hydrogen peroxide decomposition catalysts and noble metal chlorides that tend to ionize more than copper and cause precipitation on the surface of the copper pattern.
本発明を実施する場合、上記基本的な成分の他
に過酸化水素の一般的な安定剤として知られてい
るアルコール類、アミン類、イミン類、アミド
類、フエノール類、カルボン酸類、ケトン類、ア
ルキルおよびアリールスルフオン酸類、エーテル
類およびタン白質等添加することができる。上記
物質はエツチング剤の浴寿命を長くするという作
用だけでなく、銅の腐蝕を抑制する働きもあり、
本発明を一層有用ならしめるものである。 When carrying out the present invention, in addition to the above basic ingredients, alcohols, amines, imines, amides, phenols, carboxylic acids, ketones, which are known as general stabilizers for hydrogen peroxide, Alkyl and aryl sulfonic acids, ethers, proteins, etc. can be added. The above substances not only have the effect of extending the bath life of the etching agent, but also have the effect of suppressing copper corrosion.
This makes the present invention even more useful.
遊離塩素イオンを共存させることによる銅溶解
速度の抑制効果と無電解ニツケルの溶解速度は、
第１図に示す通りである。尚、この溶液の組成は
過酸化水素3.0mol／、硫酸1.5mol／およびポ
リエチレングリコール（分子量600）10ｇ／で
ある。第１図からもわかるように塩素イオンの共
存によつて銅パターンの浸蝕は、実質的に無視し
得るほどに抑制された状態でニツケル薄膜を溶解
させることが出来る。 The effect of suppressing the copper dissolution rate due to the coexistence of free chlorine ions and the dissolution rate of electroless nickel are as follows.
As shown in FIG. The composition of this solution was 3.0 mol of hydrogen peroxide, 1.5 mol of sulfuric acid, and 10 g of polyethylene glycol (molecular weight 600). As can be seen from FIG. 1, the coexistence of chlorine ions makes it possible to dissolve the nickel thin film while the corrosion of the copper pattern is suppressed to a virtually negligible extent.
エツチング処理は、本発明のエツチング剤にプ
リント基板を単に浸漬する方法あるいはエツチン
グ剤をプリント基板にスプレー処理する方法等に
よつて行い得る。またエツチング処理によつて消
耗された溶液成分を適宜補充する等の方法により
コントロールされた状態で連続的な処理も可能で
ある。 The etching process can be carried out by simply immersing the printed circuit board in the etching agent of the present invention, or by spraying the etching agent onto the printed circuit board. Continuous processing is also possible under controlled conditions, such as by appropriately replenishing solution components consumed by the etching process.
本発明によれば数十秒から数分といつた短時間
のエツチング処理により、ニツケル薄膜を完全に
溶解除去することが出来るのみならず、銅パター
ン部の浸蝕は非常に少ないため極めて信頼性の高
い完全なエツチング基板を得ることが出来る。ま
た操作が簡単であること、酸―過酸化水素を基本
成分とするためニツケル、銅の回収が容易である
こと、公害問題を引き起すことのないこと等実用
上多くの価値を有するエツチング剤を提供するも
のである。 According to the present invention, not only can the nickel thin film be completely dissolved and removed by a short etching process of several tens of seconds to several minutes, but the corrosion of the copper pattern portion is extremely small, resulting in extremely reliable etching. A highly completely etched substrate can be obtained. In addition, it is an etching agent that has many practical values, such as being easy to operate, having acid-hydrogen peroxide as its basic component, making it easy to recover nickel and copper, and not causing any pollution problems. This is what we provide.
以下、本発明を実施例により詳しく説明する。 Hereinafter, the present invention will be explained in detail with reference to Examples.
実施例 １
基板上の全面に0.5μの厚さの無電解ニツケル
メツキ薄膜を有し その上に20μの銅回路パター
ンを形成させたプリント基板を硫酸1.5mol／、
過酸化水素3.0mol／、塩化アンモニウム
200ppmおよびピペリジン10ｇ／の組成からな
る溶液で30℃、スプレー圧1.5Kg／cm2に於いてス
プレーエツチングを行つた結果、ニツケル薄膜は
約60秒で完全に除去することができた。又、この
間の銅パターン部の溶解量は電子顕微鏡観察の結
果、0.5μ以下であつた。Example 1 A printed circuit board with a 0.5 μ thick electroless nickel plating thin film on the entire surface and a 20 μ thick copper circuit pattern formed thereon was heated with 1.5 mol of sulfuric acid/
Hydrogen peroxide 3.0mol/, ammonium chloride
As a result of spray etching at 30° C. and a spray pressure of 1.5 kg/cm 2 with a solution consisting of 200 ppm and 10 g/piperidine, the nickel thin film could be completely removed in about 60 seconds. Further, the amount of dissolution in the copper pattern portion during this period was found to be less than 0.5μ as a result of electron microscopy observation.
実施例 ２
実施例１と同じプリント基板を硫酸3mol／
、過酸化水素9mol／、塩化アンモニウム
400ppmおよびプロピオン酸アミド10ｇ／の組
成から成る溶液で、30℃に於いて浸漬処理した結
果、ニツケル薄膜は約60秒で完全に除去すること
ができ、この間の銅パターン部の溶解量は0.5μ
以下であつた。Example 2 The same printed circuit board as in Example 1 was treated with 3 mol of sulfuric acid/
, hydrogen peroxide 9mol/, ammonium chloride
As a result of immersion treatment at 30°C in a solution consisting of 400 ppm and 10 g of propionic acid amide, the nickel thin film could be completely removed in about 60 seconds, and the amount of copper pattern dissolved during this time was 0.5 μ.
It was below.
実施例 ３
実施例１と同じプリント基板を硫酸0.2mol／
、過酸化水素0.6mol／、塩化ナトリウム
50ppmおよびアセトン10ｇ／の組成からなる
溶液で30℃、スプレー圧1.5Kg／cm2に於いてスプ
レーエツチングを行つた結果、ニツケル薄膜は約
２分で完全に除去することができ、この間の銅パ
ターン部の溶解量は0.5μ以下であつた。Example 3 The same printed circuit board as in Example 1 was treated with 0.2 mol of sulfuric acid/
, hydrogen peroxide 0.6mol/, sodium chloride
As a result of spray etching with a solution consisting of 50 ppm and 10 g of acetone at 30°C and a spray pressure of 1.5 kg/cm 2 , the nickel thin film could be completely removed in about 2 minutes, and the copper pattern could be completely removed during this time. The amount of dissolved portion was less than 0.5μ.
実施例 ４
実施例１と同じプリント基板を硝酸1mol／
、過酸化水素3mol／、塩化アンモニウム
200ppmおよびプロピオン酸アミド10ｇ／の組
成からなる溶液で、30℃に於いて浸漬処理を行つ
た結果、ニツケル薄膜は約90秒で完全に除去する
ことができ、この間の銅パターン部の溶解量は
0.5μ以下であつた。Example 4 The same printed circuit board as in Example 1 was treated with 1 mol of nitric acid/
, hydrogen peroxide 3mol/, ammonium chloride
As a result of immersion treatment at 30°C in a solution consisting of 200 ppm and 10 g of propionic acid amide, the nickel thin film could be completely removed in about 90 seconds, and the amount of copper pattern dissolved during this time was
It was less than 0.5μ.
実施例 ５
実施例１と同じプリント基板をリン酸1mol／
、過酸化水素3mol／、塩化ナトリウム
200ppmおよびピペリジン10ｇ／の組成からな
る溶液で30℃、スプレー圧1.5Kg／cm2に於いてス
プレーエツチングを行つた結果、ニツケル薄膜は
約３分で完全に除去することができ、この間の銅
パターン部の溶解量は1.0μ以下であつた。Example 5 The same printed circuit board as in Example 1 was treated with 1 mol of phosphoric acid/
, hydrogen peroxide 3mol/, sodium chloride
As a result of spray etching at 30°C and a spray pressure of 1.5 kg/cm 2 with a solution consisting of 200 ppm and 10 g/piperidine, the nickel thin film could be completely removed in about 3 minutes, during which time the copper pattern The amount of dissolved water was less than 1.0μ.
実施例 ６
実施例１と同じプリント基板を硫酸1mol／
、リン酸0.5mol／、過酸化水素3mol／、
塩化アンモニウム200ppmおよびポリエチレング
リコール（分子量600）10ｇ／の組成からなる
溶液で30℃に於いて浸漬処理を行つた結果、ニツ
ケル薄膜は約90秒で完全に除去することができ、
この間の銅パターン部の溶解量は0.5μ以下であ
つた。Example 6 The same printed circuit board as in Example 1 was treated with 1 mol of sulfuric acid/
, phosphoric acid 0.5mol/, hydrogen peroxide 3mol/,
As a result of immersion treatment at 30°C in a solution consisting of 200 ppm of ammonium chloride and 10 g of polyethylene glycol (molecular weight 600), the nickel thin film could be completely removed in about 90 seconds.
During this period, the amount of dissolution in the copper pattern portion was 0.5μ or less.
比較例 １
実施例１と同じプリント基板を硫酸1.5mol／
、過酸化水素3.0mol／およびプロピオン酸ア
ミド10ｇ／の組成からなる溶液で30℃、スプレ
ー圧1.5Kg／cm2に於いてスプレーエツチングを行
つた結果、ニツケル薄膜は約60秒で完全に除去す
ることができたが、銅パターン部の浸蝕が激し
く、銅パターンはほとんど溶解してしまつた。Comparative Example 1 The same printed circuit board as in Example 1 was treated with 1.5 mol of sulfuric acid/
As a result of spray etching with a solution consisting of 3.0 mol of hydrogen peroxide and 10 g of propionic acid amide at 30°C and a spray pressure of 1.5 kg/ cm2 , the nickel thin film was completely removed in about 60 seconds. However, the copper pattern was severely eroded and almost completely dissolved.
第１図は塩素イオン添加に伴う銅およびニツケ
ルの溶解速度の変化を示すグラフである。
FIG. 1 is a graph showing changes in dissolution rates of copper and nickel with addition of chlorine ions.
Claims (1)
れた少なくとも１種の酸と過酸化水素とを主成分
とする溶液に遊離塩素イオンを共存させることを
特徴とする無電解ニツケル薄膜用エツチング剤。1. An etching agent for electroless nickel thin films, characterized in that free chlorine ions are allowed to coexist in a solution whose main components are at least one acid selected from the group consisting of sulfuric acid, nitric acid, and phosphoric acid and hydrogen peroxide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16140180A JPS5798676A (en) | 1980-11-18 | 1980-11-18 | Etching agent for electroless nickel thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16140180A JPS5798676A (en) | 1980-11-18 | 1980-11-18 | Etching agent for electroless nickel thin film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5798676A JPS5798676A (en) | 1982-06-18 |
| JPS6211070B2 true JPS6211070B2 (en) | 1987-03-10 |
Family
ID=15734384
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16140180A Granted JPS5798676A (en) | 1980-11-18 | 1980-11-18 | Etching agent for electroless nickel thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5798676A (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA1209886A (en) * | 1982-01-11 | 1986-08-19 | Thomas W. Bleeks | Peroxide selective stripping compositions and method |
| US4554049A (en) * | 1984-06-07 | 1985-11-19 | Enthone, Incorporated | Selective nickel stripping compositions and method of stripping |
| MY139405A (en) | 1998-09-28 | 2009-09-30 | Ibiden Co Ltd | Printed circuit board and method for its production |
| US7591956B2 (en) * | 2006-05-03 | 2009-09-22 | OMG Electronic Chemicals, Inc. | Method and composition for selectively stripping nickel from a substrate |
| JP5645188B2 (en) * | 2011-01-13 | 2014-12-24 | 独立行政法人産業技術総合研究所 | Electroless nickel alloy film patterning method |
| CN103952561B (en) * | 2014-04-24 | 2015-10-21 | 上海第二工业大学 | A kind of for leaching gold leaching solution golden in electron wastes and method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5120972A (en) * | 1974-08-14 | 1976-02-19 | Canon Kk | MUTSUGIMEKAN JOTAI |
| JPS5323244A (en) * | 1976-08-16 | 1978-03-03 | Hitachi Ltd | Information processing unit |
| JPS5419381A (en) * | 1977-07-14 | 1979-02-14 | Toshiba Corp | Semiconductor device |
-
1980
- 1980-11-18 JP JP16140180A patent/JPS5798676A/en active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5120972A (en) * | 1974-08-14 | 1976-02-19 | Canon Kk | MUTSUGIMEKAN JOTAI |
| JPS5323244A (en) * | 1976-08-16 | 1978-03-03 | Hitachi Ltd | Information processing unit |
| JPS5419381A (en) * | 1977-07-14 | 1979-02-14 | Toshiba Corp | Semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5798676A (en) | 1982-06-18 |
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