JPH1046333A - Sputtering device - Google Patents

Sputtering device

Info

Publication number
JPH1046333A
JPH1046333A JP20385096A JP20385096A JPH1046333A JP H1046333 A JPH1046333 A JP H1046333A JP 20385096 A JP20385096 A JP 20385096A JP 20385096 A JP20385096 A JP 20385096A JP H1046333 A JPH1046333 A JP H1046333A
Authority
JP
Japan
Prior art keywords
deposition
target
substrate
proof
chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP20385096A
Other languages
Japanese (ja)
Inventor
Kunimichi Kanetani
国通 金谷
Shogo Uchiumi
省吾 内海
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP20385096A priority Critical patent/JPH1046333A/en
Publication of JPH1046333A publication Critical patent/JPH1046333A/en
Pending legal-status Critical Current

Links

Abstract

PROBLEM TO BE SOLVED: To provide a sputtering device provided with a deposition-proof member in which explacement operation is facilitated, the time therefor is reduced, a deposition- proof function is strengthened, a volume in a chamber is reduced by the minimization of a deposition-proof area, the reproducing cost for removing a deposited film is reduced and a service life is prolonged. SOLUTION: This device is provided with a cylindrical primary deposition-proof member 18 having an inside volume equal to a film deposition space by the absolute minimum to be provided between a target 8 and a substrate 7 and plural planar secondary deposition-proof member 19 arranged around one edge part of the primary deposition-proof member 18. The primary deposition-proof member 18 is arranged along the inside wall face of a chamber 1 also in such a manner that the target 8 is surrounded from the outside by a ring-shaped opening piece 18b crookedly formed toward the outer direction of the one end part thereof, and a mounting frame body 18c extending out toward the inner direction from the other end is mounted so as to be fixed to a mounting booth stand 14 supporting a mask body 17 of the substrate 7. Each deposition-proof preventing member 19 is arranged so as to surround the opening piece 18b from the outside and is fixed to an earth shield body 11 of the target 8.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、スパッタ材料のタ
ーゲットから放出されるスパッタ粒子によって基板の表
面に薄膜を生成するのに用いられるスパッタリング装置
に関するものである。
[0001] 1. Field of the Invention [0002] The present invention relates to a sputtering apparatus used for forming a thin film on the surface of a substrate by using sputter particles emitted from a target of a sputter material.

【0002】[0002]

【従来の技術】この種のスパッタリング装置は、一般に
半導体表面の配線金属や磁気記録材料の成膜などの広汎
な用途に用いられている。このようなスパッタリング装
置では、真空チャンバの内壁面や交換できない部材など
にスパッタ粒子が付着すると、その付着したスパッタ粒
子の除去作業が極めて困難となる。そこで、真空チャン
バ内部の成膜室には、成膜すべき基板以外へのスパッタ
粒子の付着を防止するため防着板を設けて、真空チャン
バの内壁面や交換できない部材などにスパッタ粒子が付
着するのを未然に防止している。この防着板は、放電に
よる発熱の影響を受けて熱変形するのを防止するため
に、放電発生領域からできる限り遠ざけてチャンバの内
壁面に固定されている。
2. Description of the Related Art This type of sputtering apparatus is generally used for a wide variety of purposes such as forming a wiring metal or a magnetic recording material on a semiconductor surface. In such a sputtering apparatus, when sputtered particles adhere to the inner wall surface of the vacuum chamber or a member that cannot be replaced, it becomes extremely difficult to remove the sputtered particles. Therefore, in the film forming chamber inside the vacuum chamber, an anti-adhesion plate is provided to prevent the sputter particles from adhering to a substrate other than the substrate on which the film is to be formed. Is prevented beforehand. The deposition-preventing plate is fixed to the inner wall surface of the chamber as far as possible from the discharge generation area in order to prevent the heat-deposition plate from being thermally deformed by the influence of heat generated by the discharge.

【0003】[0003]

【発明が解決しようとする課題】しかしながら、上記防
着板は、放電発生領域からできる限り遠ざけて固定する
ようにしていることから、個数が多く、且つ個々の物が
長い形状になっていることに起因して、交換作業が煩雑
となり、作業に時間がかかり過ぎる。また、個数が多い
のに伴って、隣接する防着板同志の重ね合わせ部分が多
くなり、この重ね合わせ部分の隙間からスパッタが外部
に漏れ易い。このように防着機能が十分でないために、
防着板を備えているにも拘わらずチャンバの内壁面など
にスパッタ粒子が付着してしまい、その付着膜の除去す
るための再生コストが高くつく。さらに、多くの防着板
を設置するために、その設置スペースが全体として大き
くなり、それに伴ってチャンバの容積を大きくしなけれ
ばならない。しかも、個々の防着板は、可及的に軽量化
を図る必要があることから、比較的長い形状であっても
厚みを大きくできないので、強度や剛性が不足して寿命
が短い欠点がある。
However, since the above-mentioned deposition-preventing plates are fixed as far as possible from the discharge-generating region, the number of the individual plates and the length of each individual component are long. As a result, the replacement work becomes complicated, and the work takes too much time. Further, as the number increases, the number of overlapped portions of adjacent deposition-preventing plates increases, and spatter easily leaks to the outside from gaps between the overlapped portions. Because the protective function is not enough,
Despite the provision of the deposition-preventing plate, sputtered particles adhere to the inner wall surface of the chamber and the like, and the cost for regenerating the sputtered film is high. Furthermore, in order to install many deposition plates, the installation space becomes large as a whole, and the volume of the chamber must be increased accordingly. In addition, since the individual protection plates need to be made as light as possible, the thickness cannot be increased even if the shape is relatively long, so that the strength and rigidity are insufficient and the life is short. .

【0004】そこで本発明は、交換作業の容易化および
短時間化、防着機能の強化、防着範囲の最小化によるチ
ャンバ内容積の縮小化、付着膜を除去するための再生コ
ストの低減および長寿命化を図った防着板を備えたスパ
ッタリング装置を提供することを目的とするものであ
る。
Accordingly, the present invention provides an easy and short replacement work, a strengthening of the deposition prevention function, a reduction in the volume in the chamber by minimizing the deposition prevention range, a reduction in the regeneration cost for removing the adhered film, and It is an object of the present invention to provide a sputtering apparatus provided with a deposition-preventing plate having a long life.

【0005】[0005]

【課題を解決するための手段】上記目的を達成するため
に、本発明のスパッタリング装置は、スパッタリグ材料
のターゲットから放出されるスパッタ粒子により基板の
表面に薄膜を生成するスパッタリング装置において、前
記ターゲットと基板との間に設けるべき必要最小限の成
膜空間と同等の内部容積を有する筒状の第1の防着部材
と、前記第1の防着部材の一端部分の周囲に配設される
複数個の板状の第2の防着部材とを備え、前記第1の防
着部材は、チャンバの内壁面に沿い、且つその一端部に
外方へ向け屈曲形成されたリング状の拡開辺部で前記タ
ーゲットを外側から囲むように配置されて、他端から内
方へ延出した取付枠体が前記基板の近傍箇所の取付ブー
ス体に固定されて取り付けられており、前記各第2の防
着板は、前記拡開辺部を外側から囲むように配置されて
前記ターゲットの近傍箇所に固定されている。
In order to achieve the above object, a sputtering apparatus according to the present invention comprises: a sputtering apparatus for forming a thin film on a surface of a substrate by using sputter particles emitted from a target of a sputter rig material; A cylindrical first deposition-inhibiting member having an internal volume equivalent to the minimum necessary film-forming space to be provided between the substrate and a plurality of first deposition-inhibiting members arranged around one end of the first deposition-inhibiting member; A ring-shaped expanding side formed along an inner wall surface of the chamber and bent outward at one end thereof. A mounting frame body is disposed so as to surround the target from the outside at the portion and extends inward from the other end, and is fixedly mounted to a mounting booth body at a location near the substrate, and each of the second The proof plate is expanded as described above. Part of being arranged so as to surround from the outside and is fixed to the vicinity portions of the target.

【0006】上記スパッタリング装置では、第1と第2
の二種の防着部材だけでスパッタ粒子が不要な箇所に付
着するのを防止しており、しかも、第1の防着部材は、
筒状の一体物となって、スパッタ粒子が付着してはいけ
な箇所のほぼ全てをカバーすることができ、複数個の第
2の防着部材は第1の防着板によりスパッタ粒子の付着
を防止できない箇所にのみ配置されるだけである。した
がって、防着部材の個数の減少に伴って交換作業が容易
となって作業時間を大幅に短縮でき、隣接する防着部材
同志の重ね合わせ箇所の減少によってスパッタ粒子の漏
出を極力抑制でき、防着機能が格段に向上する。さら
に、第1の防着部材が必要最小限の成膜空間と同等の内
部容積を有する筒状になっているので、チャンバは、第
1の防着部材に対応した容積に縮小して小型化できる。
また、防着部材は小型化に伴ってその強度や剛性が向上
し、防着部材の長寿命化を図ることができる。
In the above sputtering apparatus, the first and second
The sputter particles are prevented from adhering to unnecessary portions only by the two types of deposition prevention members, and the first deposition prevention member is
As a cylindrical one-piece, it is possible to cover almost all parts where sputter particles should not adhere, and the plurality of second deposition-preventing members are adhered by the first deposition plate. It is only arranged at a place where it cannot be prevented. Therefore, as the number of the deposition-preventing members is reduced, the replacement work is facilitated and the operation time can be greatly reduced, and the leakage of sputter particles can be suppressed as much as possible by reducing the number of overlapping portions of the neighboring deposition-preventing members. The wearing function is significantly improved. Further, since the first deposition-preventing member has a cylindrical shape having an internal volume equivalent to the minimum necessary film-forming space, the chamber is reduced in size to a volume corresponding to the first deposition-preventing member. it can.
In addition, the strength and rigidity of the deposition-inhibiting member are improved with downsizing, and the life of the deposition-inhibiting member can be extended.

【0007】[0007]

【発明の実施の形態】以下、本発明の好ましい実施の形
態について図面を参照しながら説明する。図1は本発明
の一実施の形態に係るスパッタリング装置を示す縦断面
図である。同図において、真空チャンバ1は、下部のチ
ャンバ基体2と上部のカソードベース体3とを気密に合
体して構成されており、内部に成膜室4が設けられてい
る。成膜室4の下方には、成膜対象のガラス基板7が図
示しない基板ホルダに取り付けられており、このガラス
基板7は基板ホルダにより移動可能になっている。
DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a longitudinal sectional view showing a sputtering apparatus according to one embodiment of the present invention. In FIG. 1, a vacuum chamber 1 is formed by hermetically uniting a lower chamber base 2 and an upper cathode base body 3 and has a film forming chamber 4 provided therein. Below the film forming chamber 4, a glass substrate 7 to be formed is attached to a substrate holder (not shown), and the glass substrate 7 can be moved by the substrate holder.

【0008】成膜室4の上方には、スパッタ材料である
平板状のターゲット8が基板7に対し平行に位置して冷
却ボックス9にねじ(図示せず)で固定されている。な
お、冷却ボックス9は、カソードベース体3にスペース
部材10を介在して固定されている。
Above the film forming chamber 4, a flat target 8, which is a sputtering material, is positioned parallel to the substrate 7 and is fixed to a cooling box 9 with screws (not shown). The cooling box 9 is fixed to the cathode base body 3 with a space member 10 interposed therebetween.

【0009】カソードベース体3には、四つのアースシ
ールド体11が矩形状に配置されてボルト12aにより
固着されており、これらアースシールド体11からそれ
ぞれ内方へ突出したカバー片12が ターゲット8に対
し適当な間隙を存してターゲット8の周縁部分を覆って
いる。それにより、ターゲット8におけるスパッタされ
ない周縁部分には放電が発生しないようになっている。
一方、基板7の周囲に配置された取付ベース台14に
は、四つのマスク板17が矩形状に配置されてボルト1
2により固定されており、これらマスク板17は、基板
7の周縁部をこれにスパッタ粒子が付着しないよう覆っ
ている。
On the cathode base body 3, four earth shield bodies 11 are arranged in a rectangular shape and fixed by bolts 12a, and cover pieces 12 projecting inward from the earth shield bodies 11 are respectively attached to the targets 8. On the other hand, the peripheral portion of the target 8 is covered with an appropriate gap. As a result, no discharge is generated at the peripheral portion of the target 8 where no sputtering is performed.
On the other hand, four mask plates 17 are arranged in a rectangular shape on the mounting base 14 arranged around
The mask plate 17 covers the periphery of the substrate 7 so that sputtered particles do not adhere to the periphery.

【0010】このようなスパッタリング装置は、チャン
バ1の成膜室4が図示しない真空ポンプの作動により真
空排気パイプを通じて排気されて高真空状態に引かれ、
この高真空状態となった成膜室4には、ガス導入管(図
示せず)を通じてアルゴンガスなどの放電ガスが導入さ
れる。この放電ガス雰囲気中において、ターゲット8に
電圧を印加してプラズマを生成し、ターゲット8をスパ
ッタリングする。基板7には、ターゲット8から弾き出
されたスパッタ粒子による薄膜が生成される。
In such a sputtering apparatus, the film forming chamber 4 of the chamber 1 is evacuated through a vacuum evacuation pipe by the operation of a vacuum pump (not shown) and pulled into a high vacuum state.
A discharge gas such as an argon gas is introduced into the film forming chamber 4 in the high vacuum state through a gas introduction pipe (not shown). In this discharge gas atmosphere, a voltage is applied to the target 8 to generate plasma, and the target 8 is sputtered. A thin film is formed on the substrate 7 by sputtered particles ejected from the target 8.

【0011】次に、本発明の要旨とする構成である防着
部材18,19について説明する。
Next, a description will be given of the deposition-preventing members 18, 19, which are the constitutions of the present invention.

【0012】上記スパッタリング装置には、図3に示す
第1の防着部材18と図2に示す第2の防着部材19と
の二種を備えている。第1の防着部材18は、図3に示
すように、防着本体部18aが薄板により角筒状に形成
されており、この防着本体部18aの上端近傍の周辺か
ら外方へ拡がるように延びる拡開辺部18bが折曲加工
により形成されているとともに、防着本体部18aの下
端部に、矩形状の取付枠体18cが溶接手段により固着
されている。この第1の防着部材18は単一設けられて
いる。一方、第2の防着部材19は、図2に示すよう
に、本体板部19aの上端が直交方向に折曲されて延出
片19bが形成され、さらに、延出片19bの端部が下
方の直交方向に折曲されて取付片19cが形成された形
状になっている。
The above-mentioned sputtering apparatus is provided with two types, a first deposition-preventing member 18 shown in FIG. 3 and a second deposition-preventing member 19 shown in FIG. As shown in FIG. 3, the first deposition-inhibiting member 18 has a deposition-preventing main body 18a formed of a thin plate in the shape of a rectangular tube, and extends outward from the periphery near the upper end of the deposition-preventing main body 18a. Is formed by bending, and a rectangular mounting frame 18c is fixed to the lower end of the deposition-preventing main body 18a by welding means. The first attachment member 18 is provided as a single unit. On the other hand, as shown in FIG. 2, the upper end of the main body plate portion 19a is bent in the orthogonal direction to form the extension piece 19b, and further, the end of the extension piece 19b is formed. The attachment piece 19c is formed by being bent in the lower orthogonal direction.

【0013】上記第1の防着部材18の防着本体部18
aは、互いに対向するターゲット8と基板7との間に構
成される必要最小限の成膜空間に相当する容積を有する
角筒状に形成されている。この第1の防着部材18は、
取付枠体18cの下面に矩形状の補強枠体20をねじ
(図示せず)で固定して補強されており、この補強枠体
20が取付ベース台14上に載置されるとともに、位置
決めピン21を取付ベース台14側から補強枠体20に
圧入することによって、取付ベース台14に位置決め状
態で固定されている。固定状態の第1の防着部材18
は、その防着本体部18aが真空チャンバ1の内壁面に
沿って配置されて、その防着本体部18aの内部に成膜
室4が設けられる。また、第1の防着部材18の拡開辺
部18bはアースシールド体13の外周を囲むように配
置される。なお、マスク板17には、取付枠体18cに
おける補強枠体20の取付箇所を上方から覆う防着片1
7aが突設されている。
The main body 18 of the first member 18
a is formed in a rectangular cylindrical shape having a volume corresponding to a minimum necessary film forming space formed between the target 8 and the substrate 7 facing each other. This first deposition prevention member 18
A rectangular reinforcing frame 20 is fixed to the lower surface of the mounting frame 18c by screws (not shown) and reinforced. The reinforcing frame 20 is placed on the mounting base 14 and positioning pins are provided. 21 is press-fitted into the reinforcing frame 20 from the side of the mounting base 14 to be fixed to the mounting base 14 in a positioning state. First fixing member 18 in a fixed state
The deposition main body 18a is disposed along the inner wall surface of the vacuum chamber 1, and the deposition chamber 4 is provided inside the deposition main body 18a. Further, the expanded side portion 18 b of the first deposition-inhibiting member 18 is disposed so as to surround the outer periphery of the earth shield body 13. In addition, the mask plate 17 has the attachment-preventing piece 1 covering the mounting portion of the reinforcing frame 20 in the mounting frame 18c from above.
7a is protruded.

【0014】四つの第2の防着部材19は、それらの本
体板部19aにより第1の防着部材18の上部を囲むよ
うに矩形状に配置されて、各々の取付片19cをボルト
12bによりアースシールド体11に固定して取り付け
られる。この取付状態において、各第2の防着部材19
の各々の本体板部19aは、第1の防着部材18の拡開
辺部18bの外方に位置して、真空チャンバ1における
カソードベース体3の内壁面に沿って垂下状態に保持さ
れる。
The four second attachment members 19 are arranged in a rectangular shape so as to surround the upper part of the first attachment member 18 by their main body plate portions 19a, and each of the mounting pieces 19c is bolted by a bolt 12b. It is fixedly attached to the earth shield body 11. In this mounting state, each second protection member 19
The main body plate portions 19a are located outside the expanded side portion 18b of the first deposition-inhibiting member 18 and are held in a hanging state along the inner wall surface of the cathode base body 3 in the vacuum chamber 1. .

【0015】次に、上記各防着部材18,19の作用に
ついて説明する。第1の防着部材18は、真空チャンバ
1の内壁面全体へのスパッタ粒子の付着を防止する。ま
た、マスク体17の防着片17aは、スパッタ粒子が第
1の防着部材18の取付枠部18cの内縁部とマスク板
17との隙間から漏れ出るのを防止している。また、第
1の防着部材18の拡開辺部18bは、防着本体部18
aに対し外方に向けスパッタ粒子が付着することのない
適切な角度に設けられている。これは、ターゲット8が
絶縁物である場合、第1の防着部材18の上端までスパ
ッタ粒子が付着して絶縁膜が形成されると、この絶縁膜
によって第1の防着部材18の上端部に放電が発生し、
その放電による発熱によって放電部分が熱変形するのを
防止するためである。一方、第2の防着部材19は、第
1の防着部材18の拡開辺部18bとアースシールド体
11との隙間から外方へ漏れ出るスパッタ粒子がカソー
ドベース体3およびチャンバ基体2の各々の内壁面に付
着するのを防止する。
Next, the operation of each of the above-described deposition preventing members 18 and 19 will be described. The first deposition preventing member 18 prevents sputter particles from adhering to the entire inner wall surface of the vacuum chamber 1. Further, the attachment-preventing pieces 17a of the mask body 17 prevent the sputtered particles from leaking from the gap between the inner edge of the mounting frame portion 18c of the first attachment-preventing member 18 and the mask plate 17. Further, the expanded side portion 18b of the first deposition prevention member 18 is
It is provided at an appropriate angle such that sputtered particles do not adhere outward to a. This is because, when the target 8 is an insulator, when the sputtered particles adhere to the upper end of the first depositing member 18 to form an insulating film, the insulating film forms the upper end of the first depositing member 18. Discharge occurs,
This is to prevent the discharge portion from being thermally deformed by the heat generated by the discharge. On the other hand, sputtered particles leaking outward from the gap between the expanded side portion 18b of the first deposition prevention member 18 and the earth shield body 11 are formed in the second deposition prevention member 19 of the cathode base body 3 and the chamber base 2. Prevent it from adhering to each inner wall surface.

【0016】上記スパッタリング装置では、ほぼ筒状に
一体形成された単一の第1の防着部材18と、第1の防
着部材18に対し防着補助を行う四つの第2の防着部材
19を備えているだけであり、防着部材18,19の個
数が従来装置に比較して格段に減少している。この部品
点数の削減に起因して、以下のような効果を得られる。
すなわち、防着部材18,19の交換作業が容易となっ
て作業時間を大幅に短縮できる。また、隣接する防着部
材18,19同志の重ね合わせ箇所が少なくなるのに伴
ってスパッタ粒子の漏れが格段に減少し、スパッタ粒子
の防着機能を強化できる。さらに、第1の防着部材18
が略筒状の一体物になっているため、成膜室4内におけ
るスパッタ粒子の防着範囲を可及的に小さくすることが
でき、チャンバ1は、第1の防着部材18に対応した容
積を有する程度に縮小して小型化できる。
In the above-described sputtering apparatus, a single first deposition-inhibiting member 18 integrally formed in a substantially cylindrical shape, and four second deposition-inhibiting members for assisting deposition of the first deposition-inhibiting member 18 are provided. Only 19 are provided, and the number of the deposition-preventing members 18 and 19 is significantly reduced as compared with the conventional device. Due to this reduction in the number of parts, the following effects can be obtained.
That is, the replacement work of the deposition-inhibiting members 18 and 19 becomes easy, and the work time can be greatly reduced. Further, as the number of overlapping portions of the adjacent deposition-inhibiting members 18 and 19 is reduced, the leakage of sputtered particles is remarkably reduced, and the function of preventing sputtered particles from being adhered can be enhanced. Further, the first deposition preventing member 18
Is formed as a substantially cylindrical integral body, the deposition range of sputter particles in the film forming chamber 4 can be made as small as possible, and the chamber 1 corresponds to the first deposition prevention member 18. It is possible to reduce the size by reducing the size to have a volume.

【0017】しかも、防着部材18,19は、小型化に
伴って十分な厚みを有する形状としても重量が大きくな
らないので、十分な強度や剛性を備えたものとなり、長
寿命化を図ることができる。さらに、不要な箇所へのス
パッタ粒子の付着が大幅に減少するので、スパッタ粒子
による付着膜を除去するための再生コストも安くつく。
Moreover, since the weight of the deposition-inhibiting members 18 and 19 does not increase even if they are formed into a shape having a sufficient thickness in accordance with the miniaturization, the members have sufficient strength and rigidity, and a long life can be achieved. it can. Furthermore, since spatter particles are less likely to adhere to unnecessary portions, the cost of regenerating the sputter particles to remove the adhered film can be reduced.

【0018】[0018]

【発明の効果】以上のように、本発明のスパッタリング
装置によれば、ターゲットと基板との間に設けるべき必
要最小限の成膜空間と同等の内部容積を有する筒状の第
1の防着部材と、第1の防着部材の一端部分の周囲に配
列される複数個の板状の第2の防着部材とを備えた構成
としたので、防着部材の個数の減少に伴って交換作業が
容易となり、作業時間を大幅に短縮できる。また、防着
部材の個数が少ないので、隣接する防着部材同志の重ね
合わせ箇所が減少し、この重ね合わせ箇所からのスパッ
タ粒子の漏出を最小限に抑制できるから、防着機能が格
段に向上する。さらに、第1の防着部材が必要最小限の
成膜空間と同等の内部容積を有する筒状になっているの
で、チャンバは、第1の防着部材に対応した容積に縮小
して小型化できる。しかも、防着部材の強度や剛性の向
上を図ることもできるので、防着部材の長寿命化を得ら
れる。また、第2の防着部材が拡開辺部を備えているの
で、絶縁成膜の場合においても防着部材の長寿命化を図
れる利点がある。
As described above, according to the sputtering apparatus of the present invention, the first cylindrical deposition prevention having the same internal volume as the minimum necessary film formation space to be provided between the target and the substrate. Since the structure includes the member and a plurality of plate-shaped second deposition members arranged around one end of the first deposition member, replacement is performed as the number of deposition members decreases. Work becomes easy, and work time can be greatly reduced. In addition, since the number of deposition-preventing members is small, the number of overlapping portions of adjacent deposition-preventing members is reduced, and the leakage of sputter particles from the superposed locations can be minimized, so that the deposition-preventing function is significantly improved. I do. Further, since the first deposition-preventing member has a cylindrical shape having an internal volume equivalent to the minimum necessary film forming space, the chamber is reduced in size to a volume corresponding to the first deposition-preventing member. it can. In addition, since the strength and rigidity of the deposition prevention member can be improved, the life of the deposition prevention member can be extended. Further, since the second deposition-preventing member has the expanded side portion, there is an advantage that the life of the deposition-preventing member can be extended even in the case of insulating film formation.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の一実施の形態に係るスパッタリング装
置を示す縦断面図。
FIG. 1 is a longitudinal sectional view showing a sputtering apparatus according to one embodiment of the present invention.

【図2】同上装置における第2の防着部材の斜視図。FIG. 2 is a perspective view of a second deposition-inhibiting member in the device.

【図3】同上装置における第1の防着部材の斜視図。FIG. 3 is a perspective view of a first deposition-inhibiting member in the device.

【符号の説明】[Explanation of symbols]

1 チャンバ 7 基板 8 ターゲット 14 取付ベース台 18 第1の防着部材 18b 拡開辺部 18c 取付枠体 19 第2の防着部材 DESCRIPTION OF SYMBOLS 1 Chamber 7 Substrate 8 Target 14 Attachment base stand 18 First attachment member 18b Expanded side portion 18c Attachment frame 19 Second attachment member

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 スパッタリグ材料のターゲットから放出
されるスパッタ粒子により基板の表面に薄膜を生成する
スパッタリング装置において、 前記ターゲットと基板との間に設けるべき必要最小限の
成膜空間と同等の内部容積を有する筒状の第1の防着部
材と、 前記第1の防着部材の一端部分の周囲に配設される複数
個の板状の第2の防着部材とを備え、 前記第1の防着部材は、チャンバの内壁面に沿い、且つ
その一端部に外方へ向け屈曲形成されたリング状の拡開
辺部で前記ターゲットを外側から囲むように配置され
て、他端から内方へ延出した取付枠体が前記基板の近傍
箇所の取付ブース体に固定されて取り付けられており、 前記各第2の防着板は、前記拡開辺部を外側から囲むよ
うに配置されて前記ターゲットの近傍箇所に固定されて
いることを特徴とするスパッタリグ装置。
1. A sputtering apparatus for forming a thin film on a surface of a substrate by using sputter particles emitted from a target of a sputter rig material, wherein an internal volume equivalent to a minimum necessary film forming space to be provided between the target and the substrate. And a plurality of plate-shaped second deposition members disposed around one end of the first deposition member. The deposition-inhibiting member is arranged along the inner wall surface of the chamber, and is arranged so as to surround the target from the outside at a ring-shaped expanded side portion formed by bending outward at one end thereof, and inward from the other end. The mounting frame body extending to is fixedly mounted to a mounting booth body at a location near the substrate, and each of the second deposition-preventing plates is disposed so as to surround the expanded side portion from the outside. Fixed to a location near the target Supattarigu apparatus characterized by there.
JP20385096A 1996-08-01 1996-08-01 Sputtering device Pending JPH1046333A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20385096A JPH1046333A (en) 1996-08-01 1996-08-01 Sputtering device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20385096A JPH1046333A (en) 1996-08-01 1996-08-01 Sputtering device

Publications (1)

Publication Number Publication Date
JPH1046333A true JPH1046333A (en) 1998-02-17

Family

ID=16480738

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20385096A Pending JPH1046333A (en) 1996-08-01 1996-08-01 Sputtering device

Country Status (1)

Country Link
JP (1) JPH1046333A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080000420A1 (en) * 2006-06-30 2008-01-03 Lg Philips Lcd Co., Ltd. Shadow mask and deposition device having the same
JP2009187682A (en) * 2008-02-01 2009-08-20 Ulvac Japan Ltd Method for manufacturing cathode electrode, and method for manufacturing thin film solid lithium-ion secondary battery
JP2013129884A (en) * 2011-12-22 2013-07-04 Canon Anelva Corp Device for opening and closing lid
WO2020137489A1 (en) * 2018-12-27 2020-07-02 株式会社アルバック Deposition preventing member and vacuum processing device
CN111511956A (en) * 2018-06-20 2020-08-07 株式会社爱发科 Adhesion-preventing member and vacuum processing apparatus

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080000420A1 (en) * 2006-06-30 2008-01-03 Lg Philips Lcd Co., Ltd. Shadow mask and deposition device having the same
JP2009187682A (en) * 2008-02-01 2009-08-20 Ulvac Japan Ltd Method for manufacturing cathode electrode, and method for manufacturing thin film solid lithium-ion secondary battery
JP2013129884A (en) * 2011-12-22 2013-07-04 Canon Anelva Corp Device for opening and closing lid
CN111511956A (en) * 2018-06-20 2020-08-07 株式会社爱发科 Adhesion-preventing member and vacuum processing apparatus
CN111511956B (en) * 2018-06-20 2022-08-23 株式会社爱发科 Adhesion-preventing member and vacuum processing apparatus
WO2020137489A1 (en) * 2018-12-27 2020-07-02 株式会社アルバック Deposition preventing member and vacuum processing device
KR20210006955A (en) * 2018-12-27 2021-01-19 가부시키가이샤 아루박 Anti-seizure member and vacuum processing device
CN112334591A (en) * 2018-12-27 2021-02-05 株式会社爱发科 Adhesion preventing member and vacuum processing apparatus
JPWO2020137489A1 (en) * 2018-12-27 2021-09-09 株式会社アルバック Adhesive members and vacuum processing equipment
TWI775023B (en) * 2018-12-27 2022-08-21 日商愛發科股份有限公司 Adhesion preventing member and vacuum processing apparatus

Similar Documents

Publication Publication Date Title
US5641375A (en) Plasma etching reactor with surface protection means against erosion of walls
JP5324759B2 (en) Improved PVD target
KR102186535B1 (en) Wafer processing deposition shielding components
WO2006007228A1 (en) Internal antennae for plasma processing with metal plasma
EP2792766B1 (en) Sputtering device and shield
JPH1072665A (en) Electrically floating shield in plasma reaction device
JP2007520634A (en) Target structure for physical vapor deposition
JP2001326180A (en) Coil and support for generating plasma
JPH1046333A (en) Sputtering device
JP4233702B2 (en) Carbon sputtering equipment
US9368331B2 (en) Sputtering apparatus
JPS63282263A (en) Magnetron sputtering device
KR101827472B1 (en) Insulating material target
JP2832360B2 (en) Thin film forming equipment
TW202041696A (en) Adhesion preventing member and vacuum processing apparatus
JP2006307291A (en) Sputtering system
JP2002363743A (en) Sputtering device
KR102149656B1 (en) Deposition Equipment Including Means Having Covering Formation for Restraining Arc
JP7263111B2 (en) Sputter deposition system
JP3031364B1 (en) Sputtering equipment
JPH0375364A (en) Reactive sputtering device
JP2607727Y2 (en) Cathode sputtering equipment
KR20000051498A (en) Sputtering system minimizing contamination of wafer
KR100244914B1 (en) Semiconductor sputtering facility
JP4570009B2 (en) Sputter cathode