JPH104245A - Optical semiconductor device package - Google Patents
Optical semiconductor device packageInfo
- Publication number
- JPH104245A JPH104245A JP8154040A JP15404096A JPH104245A JP H104245 A JPH104245 A JP H104245A JP 8154040 A JP8154040 A JP 8154040A JP 15404096 A JP15404096 A JP 15404096A JP H104245 A JPH104245 A JP H104245A
- Authority
- JP
- Japan
- Prior art keywords
- side wall
- thickness
- optical semiconductor
- bottom plate
- metal frame
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Led Device Packages (AREA)
- Semiconductor Lasers (AREA)
- Optical Couplings Of Light Guides (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、光通信装置などに
用いられる光半導体素子を収容する光半導体素子用パッ
ケージに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a package for an optical semiconductor device for housing an optical semiconductor device used in an optical communication device or the like.
【０００２】[0002]
【従来の技術】光通信装置などに用いられる光半導体素
子用パッケージの一例を図３（ａ）に示す。通常、この
光半導体素子用パッケージ１は主要構成部材として、金
属枠体２、セラミック端子３、金属底板４、リード５、
シールリング６および光ファイバが取り付けられる窓枠
７からなっている。なお、図中８はパッケージをボード
等に取り付けるネジ穴である。金属枠体２は、光半導体
素子用パッケージ１の外形を形づくり、内部部品格納お
よびセラミック端子３や光ファイバを接合する基材とし
ての役割を有している。この金属枠体２は、通常、Ｆｅ
−Ｎｉ−Ｃｏ合金（通称、コバール）で構成され、長方
形の枠体の四面の側壁の厚さは通常、１〜１．３ｍｍの
同一の厚さである。2. Description of the Related Art FIG. 3A shows an example of an optical semiconductor element package used for an optical communication device or the like. Normally, the package 1 for an optical semiconductor device includes a metal frame 2, a ceramic terminal 3, a metal bottom plate 4, a lead 5,
It comprises a seal ring 6 and a window frame 7 to which an optical fiber is attached. In the figure, reference numeral 8 denotes a screw hole for attaching the package to a board or the like. The metal frame 2 has a role of shaping the outer shape of the optical semiconductor element package 1, storing internal components, and bonding the ceramic terminal 3 and the optical fiber. This metal frame 2 is usually made of Fe
-It is composed of a Ni-Co alloy (commonly called Kovar), and the thickness of the four side walls of the rectangular frame is usually the same thickness of 1 to 1.3 mm.
【０００３】セラミック端子３は、図３（ｂ）に示すよ
うに、金属枠体２の長手方向の側壁２ａ断面上に、側壁
２ａの厚さの中心とセラミック端子３の中心が略一致す
るように接合されている。As shown in FIG. 3 (b), the center of the thickness of the side wall 2a substantially coincides with the center of the ceramic terminal 3 on the cross section of the side wall 2a in the longitudinal direction of the metal frame 2, as shown in FIG. Is joined to.
【０００４】金属底板４は、光半導体素子用パッケージ
１の底部を形づくり、光半導体素子用パッケージ１の内
部で発生した熱を効率よく外部へ放熱する機能を有して
いる。この機能は、搭載する光半導体素子の特性が温度
依存性をもつため、光半導体素子を一定の温度に保つ必
要があるので、極めて重要である。この金属底板４に
は、次の２つの特性が要求される。１つは上述のように
光半導体素子、例えばレーザチップを効率よく冷却する
ために高い熱伝導率が要求される。もう１つは、光半導
体素子用パッケージ１はろう付、一般には銀ろう付によ
り組み立てられるので、高温（〜８００℃）まで他の部
品との熱膨張率の整合性が得られることである。以上２
つの特性を満足する材質として、金属底板４の材質に
は、一般に銅−タングステン合金が採用されることが多
い。The metal bottom plate 4 forms the bottom of the optical semiconductor element package 1 and has a function of efficiently radiating heat generated inside the optical semiconductor element package 1 to the outside. This function is extremely important because the characteristics of the mounted optical semiconductor element have a temperature dependence, and it is necessary to maintain the optical semiconductor element at a constant temperature. The metal bottom plate 4 is required to have the following two characteristics. One is that a high thermal conductivity is required to efficiently cool an optical semiconductor device, for example, a laser chip as described above. Secondly, since the package 1 for an optical semiconductor element is assembled by brazing, generally silver brazing, it is possible to obtain the consistency of the coefficient of thermal expansion with other components up to a high temperature (up to 800 ° C.). Above 2
In general, a copper-tungsten alloy is often adopted as a material of the metal bottom plate 4 as a material satisfying the two characteristics.
【０００５】もし、金属底板４と他の部品との熱膨張率
の所定の整合性が得られないと、ろう付で金属底板４に
反りが生じる。この反りは以下の理由で問題となる。即
ち、図４を用いて説明すると、光半導体素子用パッケー
ジ１内に搭載されたレーザチップ９から出射されたレー
ザ光は、光学系１０を介して光ファイバ１１に導かれ
る。内部部品を組み込む時には、レーザ光が正確に光フ
ァイバ１１のコアに当たるように、各部品の位置は調整
されている。しかしながら、金属底板４をボード等にネ
ジ穴８を利用してネジで固定する際に、図４の矢印の力
が加わり、この力により金属底板４に残存していた反り
が矯正されると、レーザチップ９の光軸と窓枠７に取り
付けられた光ファイバ１１との相対位置が許容レベル以
上にずれてしまい、レーザ光の結合効率の低下につなが
る。If the predetermined matching of the coefficient of thermal expansion between the metal bottom plate 4 and other parts is not obtained, the metal bottom plate 4 is warped by brazing. This warping is problematic for the following reasons. That is, with reference to FIG. 4, laser light emitted from the laser chip 9 mounted in the optical semiconductor element package 1 is guided to the optical fiber 11 via the optical system 10. When incorporating the internal components, the positions of the components are adjusted so that the laser beam accurately strikes the core of the optical fiber 11. However, when the metal bottom plate 4 is fixed to a board or the like with screws using the screw holes 8, a force indicated by an arrow in FIG. 4 is applied, and if the warpage remaining on the metal bottom plate 4 is corrected by this force, The relative position between the optical axis of the laser chip 9 and the optical fiber 11 attached to the window frame 7 is shifted to an allowable level or more, leading to a decrease in the coupling efficiency of the laser light.
【０００６】上述のようなレーザチップ９の光軸と光フ
ァイバ１１との相対的な位置ずれを抑制するためには、
光半導体素子用パッケージ１の剛性を高め、ネジ止めす
る際に外部から力が加わっても、光半導体素子用パッケ
ージ１の変形を抑制することができればよい。例えば、
図５（ａ）〜（ｃ）に示すように、金属底板４のネジ穴
８近傍の板厚を金属枠体２との接合部よりも薄くして、
金属枠体２内の金属底板４が変形しないようにしてい
る。なお、図中４ａはパッケージ１の外形の薄型化の要
求に応えるために、部品の載置部の板厚を他の部分より
も薄くした部分で、光半導体素子用パッケージ１全体の
高さを低く抑えるようにしている。To suppress the relative displacement between the optical axis of the laser chip 9 and the optical fiber 11 as described above,
It suffices if the rigidity of the optical semiconductor element package 1 is increased so that deformation of the optical semiconductor element package 1 can be suppressed even when an external force is applied when the optical semiconductor element package 1 is screwed. For example,
As shown in FIGS. 5A to 5C, the thickness of the metal bottom plate 4 in the vicinity of the screw hole 8 is made thinner than the joint with the metal frame 2.
The metal bottom plate 4 in the metal frame 2 is not deformed. In the figure, reference numeral 4a denotes a portion in which the thickness of the component mounting portion is made thinner than other portions in order to meet the demand for thinning the outer shape of the package 1, and the overall height of the optical semiconductor element package 1 is reduced. I try to keep it low.
【０００７】[0007]
【発明が解決しようとする課題】しかしながら、光軸の
ずれを抑制するために、上述の金属底板４を反りが小さ
い厚い板材を加工して載置部４ａを薄くしたり、また
は、板厚を薄くしてネジ穴８の近傍を厚く加工するとい
う、高精度でかつ様々な加工を施す必要があり、コスト
が上がり高くなるという問題があった。特に、金属底板
に用いられる銅−タングステン合金は加工性が悪く、加
工コストが問題になる。However, in order to suppress the deviation of the optical axis, the metal bottom plate 4 is processed into a thick plate material having a small warpage to reduce the thickness of the mounting portion 4a, or to reduce the plate thickness. It is necessary to perform various processes with high precision, such as thinning and thickening the vicinity of the screw hole 8, which raises a problem that the cost increases and the cost increases. In particular, the copper-tungsten alloy used for the metal bottom plate has poor workability, and the processing cost becomes a problem.
【０００８】[0008]
【課題を解決するための手段】本発明は上記問題点を解
決すべくなされたもので、請求項１記載の発明は、金属
枠体に、光半導体素子を搭載する金属底板を接合してな
る光半導体素子用パッケージにおいて、前記金属枠体は
四面の側壁で構成された長方形をなす枠体であって、二
面の長尺側壁の厚さが二面の短尺側壁の厚さよりも厚い
ことを特徴とするものである。SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and the invention according to claim 1 comprises joining a metal bottom plate on which an optical semiconductor element is mounted to a metal frame. In the package for an optical semiconductor device, the metal frame is a rectangular frame formed of four side walls, and the thickness of two long side walls is larger than the thickness of two short side walls. It is a feature.
【０００９】長方形をなす金属枠体に接合された金属底
板の反りは、長尺方向の反りがそれに直交する短尺方向
の反りよりも大きくなっている。そこで、上述のよう
に、金属枠体の長尺方向の二面の長尺側壁の厚さを他の
短尺方向の二面の短尺側壁の厚さよりも厚くすると、長
尺側壁の剛性が短尺側壁よりも高くなるので、このよう
な金属枠体に接合された金属底板を外部部材にネジ止め
しても、金属底板の長尺方向の変形が抑制され、光軸の
ずれを抑制することができる。さらに、従来のように金
属底板を他の部分より厚くしたり薄くすることなく、平
板状態の金属底板を用いても、金属底板の外部部材への
取り付け時の変形を小さくすることができるので、金属
底板の加工が少なくなり、コストが低減する。The warpage of the metal bottom plate joined to the rectangular metal frame is larger in the long direction than in the short direction perpendicular to the long direction. Therefore, as described above, when the thickness of the two long side walls in the long direction of the metal frame is made larger than the thickness of the two short side walls in the other short direction, the rigidity of the long side wall becomes short. Therefore, even if the metal bottom plate joined to such a metal frame is screwed to an external member, deformation of the metal bottom plate in the longitudinal direction is suppressed, and displacement of the optical axis can be suppressed. . Furthermore, even if a flat metal bottom plate is used without making the metal bottom plate thicker or thinner than other parts as in the related art, the deformation of the metal bottom plate when attached to an external member can be reduced, The processing of the metal bottom plate is reduced, and the cost is reduced.
【００１０】また、請求項２記載の発明は、実用的な光
半導体素子用パッケージのサイズ（金属枠体は、高さが
４〜１５ｍｍ、長尺辺の長さが１０〜４０ｍｍ、短尺辺
の長さが５〜２０ｍｍ）において、光軸のずれを抑制す
る効果を生ずるサイズ条件（長尺側壁の厚さが０．７〜
３．０であり、短尺側壁の厚さが０．５〜２．０であ
り、かつ、長尺側壁の厚さが短尺側壁の厚さの１．４倍
以上）を示したものである。Further, according to the present invention, the size of a practical package for an optical semiconductor device (the metal frame has a height of 4 to 15 mm, a long side of 10 to 40 mm, and a short side of In the case where the length is 5 to 20 mm, the size condition (the thickness of the long side wall is 0.7 to 0.7 mm) which produces the effect of suppressing the displacement of the optical axis.
3.0, the thickness of the short side wall is 0.5 to 2.0, and the thickness of the long side wall is at least 1.4 times the thickness of the short side wall.
【００１１】[0011]
【発明の実施の形態】以下、図面に基づいて本発明の実
施の形態を詳細に説明する。図１は、本発明にかかる光
半導体素子用パッケージの一実施形態の横断面（長尺方
向に直交する面）の説明図である。図中、２２はコバー
ルからなる金属枠体、２３はＡｌ2 Ｏ3 からなるセラミ
ック端子、２４は銅−タングステン合金からなる金属底
板、２６はシールリングである。金属枠体２２の長尺方
向の長尺側壁２２ａの厚さｔは、短尺方向（長尺方向に
直交する）の短尺側壁（図示されず）よりも厚くなって
いる。金属枠体２２の側壁２２ａとセラミック端子２３
の接合は、従来の場合（図３（ｂ））と比較して説明す
ると、長尺側壁２２ａの外面の位置は変わらず、長尺側
壁２２ａの厚くなった分だけ内側に張り出すようにす
る。このように接合すると、光半導体素子用パッケージ
２１の外形幅が大きくなるのを防ぐことができる。一
方、光半導体素子用パッケージ２１の内側の幅は小さく
なるが、長尺側壁２２ａの内側に張出た部分はセラミッ
ク端子２３の下方の利用されていない空間であり、光半
導体素子用パッケージ２１内に実装する内部部品の寸
法、形状、および実装の作業性にに悪影響を与えること
はほとんどない。Embodiments of the present invention will be described below in detail with reference to the drawings. FIG. 1 is an explanatory diagram of a cross section (a surface orthogonal to a longitudinal direction) of an embodiment of an optical semiconductor element package according to the present invention. In the figure, 22 is a metal frame made of Kovar, 23 ceramic pin consisting of Al 2 O 3, 24 is a copper - metallic bottom plate made of tungsten alloy, 26 denotes a seal ring. The thickness t of the long side wall 22a in the long direction of the metal frame 22 is thicker than the short side wall (not shown) in the short direction (perpendicular to the long direction). Side wall 22a of metal frame 22 and ceramic terminal 23
3B, the position of the outer surface of the long side wall 22a does not change, and the inner side of the long side wall 22a is extended inward by the thickness of the long side wall 22a. . With such bonding, it is possible to prevent the outer width of the optical semiconductor element package 21 from increasing. On the other hand, although the width inside the optical semiconductor element package 21 is reduced, the portion protruding inside the long side wall 22a is an unused space below the ceramic terminal 23, and There is almost no adverse effect on the size and shape of the internal components to be mounted on the device and the workability of the mounting.
【００１２】金属枠体２２の外形寸法を、長尺方向の長
さ２０．８３ｍｍ、短尺方向の長さ（幅）を１２．７ｍ
ｍとし、短尺側壁の厚さを１ｍｍとし、長尺側壁２２ａ
の厚さｔを１．０ｍｍ、１．２ｍｍ、１．４ｍｍ、１．
７ｍｍ、２，０ｍｍと変えて、５種類のサンプルを作製
した。セラミック端子２３の張出部２３ａの幅ｄは１〜
１．５ｍｍ程度であるので、長尺側壁２２ａの内側は張
出部２３ａの下側に納まる。なお、金属底板の厚さは１
ｍｍとした。The external dimensions of the metal frame 22 are as follows: the length in the long direction is 20.83 mm, and the length (width) in the short direction is 12.7 m.
m, the thickness of the short side wall is 1 mm, and the long side wall 22a
Thickness t of 1.0 mm, 1.2 mm, 1.4 mm, 1.
Five types of samples were produced by changing to 7 mm and 2.0 mm. The width d of the overhang portion 23a of the ceramic terminal 23 is 1 to
Since it is about 1.5 mm, the inside of the long side wall 22a fits under the overhang 23a. The thickness of the metal bottom plate is 1
mm.
【００１３】これらの光半導体素子用パッケージのサン
プルに光半導体素子を搭載し、この素子を駆動させて光
出力を測定した。また、金属底板を平板にネジ止めし
て、サンプルを平板に固定した後に、再び光出力を測定
した。ネジ止め前後の光出力の変化が５％以上のものを
不良品としたところ、不良率は、側壁２２ａの厚さｔが
１．０ｍｍでは約１５％、１．２ｍｍでは１３〜１４
％、１．４ｍｍでは約７％、１．７および２．０では約
２％であった。このように、長尺側壁２２ａの厚さｔが
厚くなると、不良率は減少し、特に、長尺側壁２２ａの
厚さｔが短尺側壁の厚さ（１ｍｍ）の１．４倍以上にな
ると、不良率は１０％以下となり、好ましい結果が得ら
れた。An optical semiconductor device was mounted on a sample of these optical semiconductor device packages, and the optical output was measured by driving the device. After the metal bottom plate was screwed to the flat plate and the sample was fixed to the flat plate, the light output was measured again. When the change in the light output before and after screwing is 5% or more, the defective product is determined to be defective.
%, About 7% at 1.4 mm, and about 2% at 1.7 and 2.0. As described above, when the thickness t of the long side wall 22a increases, the defective rate decreases. In particular, when the thickness t of the long side wall 22a becomes 1.4 times or more the thickness (1 mm) of the short side wall, The defective rate was 10% or less, and favorable results were obtained.
【００１４】なお、上述の実施の形態では、金属枠体２
２の長尺側壁２２ａの厚さのみを厚くしたが、短尺側壁
を厚くすると、内部空間が狭くなり、内部部品の実装作
業に悪影響が出る。例えば、上記実施形態の場合、内部
空間の長さは１８．８３ｍｍ（外形２０．８３ｍｍ−短
尺側壁厚１ｍｍ×２）であるが、短尺側壁厚を２ｍｍに
すると、内部空間の長さは１６．８３ｍｍとなり、内部
空間の容積が約１０％減少し、短尺側壁近傍の実装作業
の観点で好ましくない。In the above embodiment, the metal frame 2
Although only the thickness of the second long side wall 22a is increased, if the short side wall is thickened, the internal space is narrowed, and the mounting operation of the internal components is adversely affected. For example, in the case of the above embodiment, the length of the internal space is 18.83 mm (outer shape 20.83 mm-short side wall thickness 1 mm x 2), but if the short side wall thickness is 2 mm, the length of the internal space is 16. 83 mm, which reduces the volume of the internal space by about 10%, which is not preferable from the viewpoint of mounting work near the short side wall.
【００１５】図２は他の実施形態の横断面（長手方向に
直交する面）の説明図である。本実施形態の光半導体素
子用パッケージ３１では、金属枠体３２の長尺側壁３２
ａの厚さを短尺側壁（図示されず）の厚さと同一の１ｍ
ｍとし、この側壁３２ａの内側に、コバールよりも剛性
の高い材質で作製した厚さ１ｍｍの部材３２ｂをろう付
けにより張り合わせたものである。部材３２ｂの材質と
しては、熱膨張率がセラミック端子２３の熱膨張率に近
いことを考慮すると、セラミック端子２３または金属底
板２４の材質であるＡｌ2 Ｏ3 または銅−タングステン
合金が最適である。本実施形態では、金属枠体３２の剛
性が前記実施形態よりも一層高くなり、ネジ止め前後の
光出力の変化が５％以上のものはほとんど発生しなかっ
た。なお、上記実施形態は本願発明の技術的範囲を限定
するものではない。FIG. 2 is an explanatory view of a cross section (a plane orthogonal to the longitudinal direction) of another embodiment. In the optical semiconductor element package 31 of the present embodiment, the long side walls 32 of the metal frame 32 are provided.
The thickness of a is 1 m which is the same as the thickness of the short side wall (not shown).
and a member 32b having a thickness of 1 mm and made of a material having higher rigidity than Kovar is attached to the inside of the side wall 32a by brazing. Considering that the coefficient of thermal expansion is close to the coefficient of thermal expansion of the ceramic terminal 23, Al 2 O 3 or a copper-tungsten alloy, which is the material of the ceramic terminal 23 or the metal bottom plate 24, is optimal as the material of the member 32b. In the present embodiment, the rigidity of the metal frame 32 was further increased than in the previous embodiment, and the change in the light output before and after screwing was hardly 5% or more. Note that the above embodiments do not limit the technical scope of the present invention.
【００１６】[0016]
【発明の効果】以上説明したように本発明によれば、金
属枠体の長尺方向の二面の長尺側壁の厚さが他の短尺方
向の二面の短尺側壁の厚さよりも厚いため、パッケージ
の長尺方向の剛性が高くなり、光軸のずれを抑制するこ
とができるので、光出力変動を従来よりも大幅に低減す
ることができる。また、平板状の金属底板を用いても、
金属底板の取り付け時の変形を小さくすることができる
ので、金属底板の加工度が軽くなり、コストが低減する
という優れた効果もある。As described above, according to the present invention, the thickness of the two long side walls in the long direction of the metal frame is greater than the thickness of the other two short side walls in the short direction. In addition, the rigidity of the package in the longitudinal direction is increased, and the deviation of the optical axis can be suppressed, so that the fluctuation of the optical output can be significantly reduced as compared with the related art. Also, even if a flat metal bottom plate is used,
Since the deformation at the time of attaching the metal bottom plate can be reduced, the degree of working of the metal bottom plate is reduced, and there is also an excellent effect that the cost is reduced.
【図１】本発明に係る光半導体素子用パッケージの一実
施形態の横断面説明図である。FIG. 1 is an explanatory cross-sectional view of an embodiment of an optical semiconductor element package according to the present invention.
【図２】本発明に係る光半導体素子用パッケージの他の
実施形態の横断面説明図である。FIG. 2 is an explanatory cross-sectional view of another embodiment of the optical semiconductor element package according to the present invention.
【図３】（ａ）、（ｂ）はそれぞれ、光半導体素子用パ
ッケージの斜視図およびその横断面説明図である。FIGS. 3A and 3B are a perspective view and a cross sectional explanatory view of an optical semiconductor element package, respectively.
【図４】光半導体素子用パッケージの使用状態を示す縦
断面説明図である。FIG. 4 is an explanatory longitudinal sectional view showing a usage state of the optical semiconductor element package.
【図５】（ａ）〜（ｃ）はそれぞれ、従来の光半導体素
子用パッケージの側面説明図、横断面説明図および縦断
面説明図である。FIGS. 5A to 5C are a side view, a cross-sectional view, and a vertical view, respectively, of a conventional package for an optical semiconductor device.
【符号の説明】 ２１、３１ 光半導体素子用パッケージ ２２、３２ 金属枠体 ２２ａ、３２ａ 側壁 ２３ セラミック端子 ２３ａ 張出部 ２４ 金属底板 ２６ シールリング ３２ｂ 部材DESCRIPTION OF SYMBOLS 21, 31 Optical semiconductor element package 22, 32 Metal frame 22a, 32a Side wall 23 Ceramic terminal 23a Overhang 24 Metal bottom plate 26 Seal ring 32b Member
Claims (2)
属底板を接合してなる光半導体素子用パッケージにおい
て、前記金属枠体は四面の側壁で構成された長方形をな
す枠体であって、二面の長尺側壁の厚さが二面の短尺側
壁の厚さよりも厚いことを特徴とする光半導体素子用パ
ッケージ。1. An optical semiconductor device package comprising a metal frame and a metal bottom plate on which an optical semiconductor device is mounted, wherein the metal frame is a rectangular frame having four side walls. An optical semiconductor element package, wherein the thickness of two long side walls is larger than the thickness of two short side walls.
属底板を接合してなる光半導体素子用パッケージにおい
て、前記金属枠体は、高さが４〜１５ｍｍ、長尺辺の長
さが１０〜４０ｍｍ、短尺辺の長さが５〜２０ｍｍであ
り、長尺側壁の厚さが０．７〜３．０であり、短尺側壁
の厚さが０．５〜２．０であり、かつ、長尺側壁の厚さ
が短尺側壁の厚さの１．４倍以上であることを特徴とす
る光半導体素子用パッケージ。2. An optical semiconductor device package comprising a metal frame and a metal bottom plate on which an optical semiconductor device is mounted, wherein the metal frame has a height of 4 to 15 mm and a length of a long side. 10 to 40 mm, the length of the short side is 5 to 20 mm, the thickness of the long side wall is 0.7 to 3.0, the thickness of the short side wall is 0.5 to 2.0, and An optical semiconductor element package, wherein the thickness of the long side wall is at least 1.4 times the thickness of the short side wall.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8154040A JPH104245A (en) | 1996-06-14 | 1996-06-14 | Optical semiconductor device package |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8154040A JPH104245A (en) | 1996-06-14 | 1996-06-14 | Optical semiconductor device package |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH104245A true JPH104245A (en) | 1998-01-06 |
Family
ID=15575611
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8154040A Pending JPH104245A (en) | 1996-06-14 | 1996-06-14 | Optical semiconductor device package |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH104245A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007150043A (en) * | 2005-11-29 | 2007-06-14 | Kyocera Corp | Semiconductor element housing package and semiconductor device |
| JP2013251318A (en) * | 2012-05-30 | 2013-12-12 | Kyocera Corp | Electronic component housing container and electronic equipment |
| KR20210044344A (en) * | 2019-10-14 | 2021-04-23 | 주식회사 세미콘라이트 | Semiconductor light emitting device |
-
1996
- 1996-06-14 JP JP8154040A patent/JPH104245A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007150043A (en) * | 2005-11-29 | 2007-06-14 | Kyocera Corp | Semiconductor element housing package and semiconductor device |
| JP2013251318A (en) * | 2012-05-30 | 2013-12-12 | Kyocera Corp | Electronic component housing container and electronic equipment |
| KR20210044344A (en) * | 2019-10-14 | 2021-04-23 | 주식회사 세미콘라이트 | Semiconductor light emitting device |
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