JPH104216A - Optical semiconductor device and light-emitting device using thereof - Google Patents

Abstract

PROBLEM TO BE SOLVED: To prevent the contact of a bonding wire, to facilitate bonding and to improve optical characteristics and reliability by a method wherein the loop shape of each conductive wire connected to an inner lead from an optical semiconductor chip and the angle at which each wire is led in, are substantially made equal. SOLUTION: A mounting lead 105, where a plurality of optical semiconductor chips 101 are arranged, and a plurality of inner leads 104, which are electrically connected to the optical semiconductor chips 101 by a conductive wire, are provided. The loop shape of each conductive wire connected to the inner leads 104 from the optical semiconductor chips 101 and the angle at which each wire is led in, are substantially made equal. Also, when a plurality of optical semiconductor chips 101, which can be driven independently, are arranged on the mounting lead 105, the top part of the inner leads 104 is made larger from the inner leads close to the mounting lead 105 in the direction of the inner lead separated from them, and the top part of the inner leads is made low.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an optical semiconductor device having a plurality of types of optical semiconductor elements which can be driven independently on a lead frame, and more particularly, to electrical characteristics, optical characteristics and reliability regardless of the use environment. The present invention relates to an optical semiconductor device excellent in productivity and productivity.

[0002]

2. Description of the Related Art Today, with the development of silicon technology such as LSI and optical communication, it has become possible to process and transmit a large amount of information. Along with this, optical semiconductor devices that transmit and receive a large amount of information, specifically, light-receiving devices such as optical sensors and solar cells, light-emitting devices such as light-emitting diodes and LDs, and optical printers, photointerrupters and LEDs that combine them Society's demands for displays and the like are increasing more and more.

As one of such optical semiconductor devices, a semiconductor element disposed on an end face of a tip of a lead electrode is bonded to an end face of another tip of a lead electrode, and a plurality of light emitting devices are formed as required. There are LED lamps capable of emitting color. This optical semiconductor device has a mount lead on which a plurality of optical semiconductor elements are arranged, and a bonding wire provided close to the mount lead and electrically connecting the optical semiconductor element and the inner lead. The plurality of optical semiconductor elements are arranged close to each other from the viewpoint of improving color mixing and the like, and are provided with a plurality of bonding wires for independent driving. For this reason, the bonding wire extending from the electrode of the optical semiconductor element to the inner lead protects the optical semiconductor element by protecting the optical semiconductor element from a change in an external environment (e.g., heating from the external environment or driving of the optical semiconductor element). Due to such factors as thermal expansion and thermal contraction of the mold member, they may come close to or come into contact with each other, which may cause a decrease in the function of the optical semiconductor device or breakage of the optical semiconductor element. As a semiconductor device for preventing such contact of a bonding wire, Japanese Unexamined Patent Publication No.
No. -82279.

Japanese Patent Application Laid-Open No. 3-55888 discloses a plurality of optical semiconductor elements, a mount lead on which the optical semiconductor elements are arranged, an optical semiconductor element of the mount lead, and a tip of an inner lead, as shown in FIG. And the plurality of wires are electrically connected to each other by a plurality of wires, and the tip of the inner lead is gradually increased in the direction of the lead farthest from the lead closest to the mount lead among the inner leads. It has been disclosed that the center of the tip of the inner lead and the wire connection portion of the tip of the plurality of inner leads are not on the same straight line to prevent contact between the wires.

[0005] Also, Japanese Patent Application Laid-Open No. 4-82279 discloses that
As shown in FIG. 5, a first lead electrode on which a plurality of semiconductor elements are arranged on an end face of a tip portion, and a bonding wire connection portion for electrically connecting the semiconductor element to each of the tip end faces. And a second lead electrode provided respectively, and when the plurality of second lead electrode connection portions are not arranged in a straight line when viewed from the end face to which the bonding wire is connected, the two lead electrodes can be very mutually connected. It is disclosed to facilitate bonding of approaching or intersecting bonding wires.

However, each of the above optical semiconductor devices is
Although the contact of the bonding wires and the ease of bonding can be improved, the semiconductor characteristics cannot be sufficiently improved. That is, today's optical semiconductor devices are:
It is used in various environments with severe temperature and humidity cycles. Even in such an environment, when semiconductor characteristics, optical characteristics, and reliability are required to be improved, the optical semiconductor device having the above configuration is not sufficient, and further improvement in characteristics is required.

[0007]

SUMMARY OF THE INVENTION In view of the above problems, the present invention provides an optical semiconductor device having high optical characteristics and high reliability while preventing contact of a bonding wire and improving bonding easiness, and a display device using the same. To provide.

[0008]

SUMMARY OF THE INVENTION The present invention relates to a mount lead on which a plurality of optical semiconductor elements are arranged, and a plurality of inner leads each electrically connected to each of the optical semiconductor elements by a conductive wire. Wherein the conductive semiconductor wires connected from the optical semiconductor element to the inner leads have substantially the same loop shape and the same angle of approach.

Also, a mount lead on which a plurality of optical semiconductor elements which can be driven independently is arranged, and a plurality of inner leads electrically connected to each of the optical semiconductor elements by a conductive wire. An optical semiconductor device comprising:
In an optical semiconductor device, the tip of the inner lead is gradually increased and the tip of the inner lead is gradually reduced in the inner lead direction farther from the inner lead near the lead.

Further, the present invention is a display device having a display panel in which optical semiconductor devices are arranged in a matrix, and a drive circuit electrically connected to the display panel.

[0011]

BEST MODE FOR CARRYING OUT THE INVENTION As a result of various experiments, the inventor of the present application has found that the reliability of a semiconductor greatly depends on the conductive wire connected from the electrode of each optical semiconductor element to the inner lead. And invented it.

Although the reason for the improvement of the characteristics by the structure of the present invention is not clear, if the shape of the conductive wire is variously changed in order to arrange a plurality of optical semiconductor elements without crossing or contact, the conductive shape is changed by the change of each shape. It is considered that the strength and adhesive strength of the conductive wire change, and the characteristics of the optical semiconductor device deteriorate.

That is, the hardness of the conductive wire used is determined to some extent in consideration of the thermal conductivity and the electrical conductivity, and the conductive wire is extremely thin.
The allowable range of curvature between the lead and the conductive wire is extremely small. Therefore, when the shape of the conductive wire is changed, the stress or the like applied at the time of connection is maintained. For each conductive wire, a conductive wire having a different strength and weak against an external force is generated, or a conductive wire having a different adhesion and a low adhesion is generated. It is considered that when an external stress or the like is applied thereto, the portion is cut or the like.

According to the present invention, it is considered that the characteristics of the optical semiconductor device can be improved by eliminating the intersection and contact of the conductive wires while keeping the loop shape and the entry angle of the conductive wires uniform. Further, since the shape of the inner lead itself does not need to be deformed for each inner lead and can be linearly arranged, the reliability can be improved and the inner lead can be easily formed. Further, the optical characteristics of the optical semiconductor device can be improved by variously adjusting the height of the inner lead. Hereinafter, the present invention will be described in detail with reference to the drawings.

FIG. 1 is a schematic sectional view of the present invention, and FIG. 2 is a schematic diagram of the present invention. LED emitting green light (emission wavelength: 555 nm) as a plurality of optical semiconductor elements
Chip, LED that emits red light (emission wavelength 660 nm)
Chip and LE that emits blue light (emission wavelength 480 nm)
A D chip is fixed on a mount lead, which is a common substrate, using an adhesive.

The LED chips are arranged in a straight line substantially perpendicular to the inner leads in consideration of the visibility and the degree of freedom of the conductive wires. Each LE
The D chip is electrically connected to the inner lead and the mount lead, respectively. The electrical connection can be made by wire bonding a conductive wire such as a gold wire using a wire bonding device, or by curing a conductive paste containing Ag or the like in a resin. The loop diameter and the 2nd approach angle of each conductive wire are substantially equal. The mount lead and each inner lead and the like are sealed with an epoxy resin or the like as a resin mold to protect the LED chip and the like. Hereinafter, each component will be described.

(Optical Semiconductor Element 101) The optical semiconductor element 101 used in the present invention includes a light emitting element and / or a light receiving element. As a light emitting element, GaAlN, ZnS,
ZnSe, SiC, GaP, GaAlAs, AlInG
A material in which a semiconductor such as aP, InGaN, GaN, or AlInGaN is formed as a light emitting layer is used. Examples of the semiconductor structure include a homostructure having a MIS junction, a PIN junction, and a PN junction, a heterostructure, and a double heterostructure. The emission wavelength can be variously selected from ultraviolet light to infrared light depending on the material of the semiconductor layer and the degree of mixed crystal thereof. Also, a single quantum well structure or a multiple quantum well structure in which the semiconductor active layer is formed as a thin film in which a quantum effect occurs can be used. Each electrode having a desired shape is formed on the formed semiconductor layer by sputtering or the like.

Next, the semiconductor wafer or the like on which the semiconductor having the above structure is formed is directly full-cut by a dicing saw in which a blade having a diamond blade is rotated, or after a groove having a width wider than the blade width is cut. (Half cut), the semiconductor wafer is cracked by external force. Alternatively, an extremely thin scribe line (meridian) is drawn on the semiconductor wafer, for example, in a checkerboard pattern by a scriber in which a diamond needle at the tip reciprocates linearly, and then the wafer is cut by an external force and cut into chips from the semiconductor wafer.

In consideration of outdoor use, it is preferable to use a gallium nitride compound semiconductor for green and blue as a semiconductor material having high luminance, and a gallium-aluminum-arsenide-based semiconductor or aluminum-indium-based semiconductor for red and red. It is preferable to use a gallium-phosphorus semiconductor, but it goes without saying that various semiconductors can be used depending on the application.

When a gallium nitride compound semiconductor is used, sapphire, spinel, Si
Materials such as C, Si, and ZnO are used. In order to form gallium nitride having good crystallinity, a sapphire substrate is preferably used. GaN on this sapphire substrate,
A buffer layer of AlN or the like is formed, and a gallium nitride semiconductor having a PN junction is formed thereon. Gallium nitride-based semiconductors exhibit N-type conductivity without being doped with impurities. When a desired N-type gallium nitride semiconductor is formed, for example, to improve luminous efficiency, Si,
It is preferable to appropriately introduce Ge, Se, Te, C, and the like. On the other hand, when a P-type gallium nitride semiconductor is formed, P-type dopants such as Zn, Mg, Be, Ca, S
Doping with r, Ba, etc. Since gallium nitride-based compound semiconductors are difficult to become p-type only by doping with a p-type dopant, it is preferable to convert the gallium nitride-based compound semiconductor to p-type by introducing a low electron beam or annealing by plasma irradiation or the like after introducing the p-type dopant.

A plurality of LED chips having different wavelengths can be used as desired. For example, two blue chips and one green and one red chip can be used. Further, the emission wavelength is not necessarily limited to blue, green and red, and the band gap of the semiconductor can be adjusted so that yellow or the like can be emitted as desired.
Further, as the arrangement of the LED chips, it is preferable to arrange the LED chips with longer emission wavelengths closer to the center side in order to improve color mixing. Optically, it is preferable to arrange the respective light emitting elements linearly. As a specific example, white light can be emitted using a yellow LED chip sandwiched between blue-green LED chips. In addition, in order to use as a multicolor optical semiconductor device for a display device, the emission wavelength of red is 600 nm to 700 nm, the emission wavelength of green is 495 nm to 565 nm, and the emission wavelength of blue is 430 nm to 490 n.
m is preferable.

On the other hand, a liquid phase growth method is used for the light receiving element.
Of Ge, Si, InAs, CdS, etc.
Those using crystalline semiconductor or polycrystalline semiconductor, plasma,
Microcrystal and amorphous semiconductor using energy such as heat and light
Optical sensors using semiconductors such as Si, SiC, SiGe
Sensors, solar cells, and the like. Semiconductor structure
Homo structure and hetero structure with PN junction and PIN junction
Structure. Depending on the semiconductor material and its degree of mixed crystal
Accordingly, various light receiving wavelengths of the light receiving element can be selected. Glass, resistant
On metal substrates such as thermal resin, aluminum and stainless steel
Then, the semiconductor having the above configuration is formed into a desired size and shape.
A light receiving element can be formed by taking a pneumatic connection. Receiving
The electrodes of the optical element are formed by sputtering or vacuum evaporation.
Various metals such as Al, Ag, Au, ZnO, IT
Various metal oxides such as O and SnO, n ⁺Semiconductors
It can be suitably used. Light receiving element for each wavelength
To drive, color filters must be provided for each optical semiconductor element.
Do not change the semiconductor for each wavelength.
Anyway you can do it.

(Conductive Wire 201) The conductive wire 201 used in the present invention is required to have good ohmic properties, mechanical connectivity, electrical conductivity, and thermal conductivity with each of the optical semiconductor element 101 electrodes. . The thermal conductivity is preferably at least 0.01 cal / cm ² / cm / ° C., more preferably at least 0.5 cal / cm ² / cm / ° C. In addition, the diameter of the conductive wire is preferably Φ10 μm or more and Φ45 μm or less in consideration of workability and the like. Specific examples of such conductive wires include conductive wires using metals such as gold, copper, platinum, and aluminum and alloys thereof. Such a conductive wire can easily connect the electrode of each optical semiconductor element to the inner lead and the mount lead by a wire bonding device. In order to connect with a wire bonding device, a wire to which a conductive wire in which a tip is melted and formed into a ball shape is ultrasonically fixed to an electrode of an optical semiconductor element, and then the wire is extended. The extended conductive wire is pressed against the tip of the inner lead as a 2nd (second time) connection, melted and fixed by applying ultrasonic waves, and cut. Thus, a conductive wire in which the electrode and the inner lead are connected can be obtained. The conductive wire with the ball is preferably connected to the electrode of the optical semiconductor device because the ball itself acts as a buffer. Therefore, the connection to the inner lead or the like is 2nd. The vicinity of the connection portion of the conductive wire fused and fixed in this way is considered to be brittle because the metal is recrystallized and the crystal becomes large unlike the portion not melted.

The loop shape in the present invention refers to a curved shape of a loop in which a conductive wire extending from an electrode of an optical semiconductor element goes to an inner lead. Further, the approach angle of the present invention refers to the 2nd approach angle of the conductive wire bonded to the end face of the inner lead.

It is preferable that the loop shape (R) of the conductive wire is equal for each conductive wire of the same type. According to the present invention, the optimum loop height and the 2nd approach angle of the conductive wire can be set, so that the reliability can be improved.

When there are a plurality of optical semiconductor elements, it is necessary to consider the arrangement of inner leads, mount leads and conductive wires. When a plurality of optical semiconductor elements are arranged on the mount lead, the optical semiconductor elements are arranged in a substantially straight line, and the conductive wires derived from the electrodes of the adjacent optical semiconductor elements are arranged in the same direction from the mount lead. It is preferable to connect the inner leads, which are substantially perpendicular to the arrangement of the optical semiconductors and are alternately connected to the respective inner leads, with the mount leads as boundaries, instead of being sequentially connected to the arranged inner leads. Similarly, in the case where there are a plurality of conductive wires derived from the electrodes of the optical semiconductor element, the optical semiconductor elements are arranged substantially in a straight line, and are arranged in the same direction from the mount lead for each adjacent conductive wire. It is preferable that the connection is not alternately made on the inner leads, but is made alternately on the inner leads which are substantially perpendicular to the arrangement of the optical semiconductor elements and are arranged on the mount leads. Thereby, the tip of the inner lead can be effectively utilized, and the contact between the conductive wires or between the conductive wire and the inner lead due to the manufacturing process and the external factors thereafter can be eliminated. In this case, the area of the tip of the inner lead is further reduced because the tip of the inner lead is disposed on the side opposite to the side on which the conductive wire connected to the outer lead passes. Is more preferred.
This is particularly effective when the tip of the outer inner lead is low.

Although the use of a conductive wire having substantially the same loop shape and approach angle can improve the semiconductor characteristics and the reliability characteristics, the use of a conductive wire having a different loop shape from the conductive wire can be used. If it is unavoidable, it is preferable to variously change the material, diameter, connection conditions, and the like of the conductive wire for each loop shape and approach angle of the conductive wire.

(Mold 103) The mold 103 is preferably provided to protect the optical semiconductor elements 101, the conductive wires 201, and the like from the outside, and can be generally formed using a resin. When the optical semiconductor element is a light emitting element, the directivity from the optical semiconductor element can be relaxed and the viewing angle can be increased by including a diffusing agent in the resin mold. Further, by forming the resin mold into a desired shape, it is possible to have a lens effect of converging or diffusing light emitted from the optical semiconductor element. Therefore, the resin mold may have a laminated structure. Specifically, it is a convex lens shape, a concave lens shape, an elliptical shape, or a combination thereof. Further, the resin mold itself may be colored to serve as a filter for cutting out unwanted wavelengths. As a material of the resin mold, a transparent resin having excellent weather resistance such as an epoxy resin and a urea resin is suitably used. As the diffusing agent, barium titanate, titanium oxide, aluminum oxide, silicon oxide and the like are preferably used.

(Inner Lead 104) The inner lead 104 used in the present invention is a mount lead.
Plural optical semiconductor elements 101 arranged on leads 105
It is necessary to connect the conductive wires 201 connected to the conductive wires 201 and to arrange the conductive wires 201 so that the conductive wires do not contact each other. Specifically, as the distance from the mount lead increases, the area of the end face of the inner lead to which wire bonding is performed can be increased to prevent contact of the conductive wire connected to the inner lead further away from the mount lead. . Further, since the inner lead itself is formed linearly together with the mount lead and is not bent and deformed, the inner lead can be formed easily and can be made strong against bending and strong against vibration. In order to reduce the end face of the tip of the inner lead, the entire outer diameter of the inner lead can be reduced, or the area can be reduced only in the vicinity of the tip. The end face in the vicinity of the tip can be formed into various shapes such as a rectangle in which a part of the inner lead is cut or a circle along the shape of a ball generated when wire bonding is performed. The roughness of the end face is preferably 1.6S or more and 10S or less in consideration of the adhesion to the conductive wire.
In order to form the tip of the inner lead into various shapes, the shape of the lead wire may be determined in advance with a mold and punched and formed, or after all the inner leads are formed, the upper part of the inner lead may be formed. May be formed by cutting a part of.

By designing the inner lead to be lower as it goes away from the mount lead, the loop shape of each conductive wire to be connected can be made equal. Thereby, the electrical and mechanical characteristics of the conductive wires can be made the same for each conductive wire. Further, as the end face height of the inner lead decreases as the distance from the mount lead increases, light to and / or from the optical semiconductor element disposed on the mount lead may be reduced.
Less obstructed by leads. Therefore, the light characteristics can be improved without adversely affecting the light emission and / or light reception characteristics.

Furthermore, after the inner lead is formed by punching, a desired end face area and end face height can be simultaneously formed by pressing from the end face direction.

The inner leads are required to have good connectivity with a conductive wire such as a bonding wire and good electrical conductivity. The specific electric resistance is 3
00 μΩ-cm or less, more preferably 3 μΩ
−cm or less. Materials satisfying these conditions include iron, copper, copper with iron, copper with tin, and aluminum, iron, and copper plated with copper, gold, and silver.

(Mount Lead 105) A plurality of optical semiconductor elements 1 are used as the mount lead 105 of the present invention.
01, and it is sufficient if each optical semiconductor element is large enough to be mounted on a device such as a die bond. Therefore, the optical semiconductor element 101 may be fixed to the mount lead 105 via an insulator. Mount lead 10
When 5 is used as a common electrode of each optical semiconductor element, sufficient electrical conductivity and connectivity with a bonding wire or the like are required.

The bonding between each optical semiconductor element 101 and the cup of the mount lead 105 can be performed by a thermosetting resin or the like. Specifically, an epoxy resin, an acrylic resin, an imide resin, and the like can be given. In addition, an Ag paste, a carbon paste, a metal bump, or the like can be used for bonding the optical semiconductor element 101 and the mount lead 105 and electrically connecting the same. Furthermore, the mount lead 1 on which the optical semiconductor element is arranged in order to improve the light use efficiency of the optical semiconductor element 101.
The surface of 05 may have a mirror-like surface, and the surface may have a reflection function. In this case, the surface roughness is preferably 0.1S or more and 0.8S or less. Further, a specific electric resistance of the mount lead 105 is preferably 300 μΩ-cm or less,
More preferably, it is 3 μΩ-cm or less. Further, when LED chips are mounted as a plurality of optical semiconductor elements 101 on the mount leads 105, good heat conductivity is required because the amount of heat generated from the LED chips increases. Specifically, it is preferably at least 0.01 cal / cm ² / cm / ° C., more preferably 0.5 cal / cm ² / c
m / ° C. or more. Materials satisfying these conditions include iron, copper, copper with iron, copper with tin, and ceramics with metallized patterns.

(Display Device) As the display device, a display panel in which a plurality of the optical semiconductor devices of the present invention are arranged and a lighting circuit which is a driving circuit, which is electrically connected, is used. Specifically, it refers to a display or the like in which an optical semiconductor device is arranged in an arbitrary shape, arranged in a desired shape such as a sign or a matrix, and can be displayed by an output pulse from a driving circuit.
The drive circuit includes a RAM (Random, Access, Mem) for temporarily storing input display data.
ory), a gradation control circuit for calculating a gradation signal for lighting an LED chip, which is an optical semiconductor element, to a predetermined brightness from data stored in the RAM, and switching by an output signal of the gradation control circuit. A driver for lighting the LED chip. The gradation control circuit calculates a lighting time of the LED chip from data stored in the RAM and outputs a pulse signal. A gradation signal, which is a pulse signal output from the gradation control circuit, is input to a driver of the LED chip to switch the driver. The LED chip is turned on when the driver is turned on, and is turned off when the driver is turned off. Hereinafter, embodiments of the present invention will be described, but it goes without saying that the present invention is not limited to only specific embodiments.

[0036]

【Example】

[Example 1] GaP (emission wavelength 555n) was used as a semiconductor for each LED chip, green, blue and red light emitting layers.
m), SiC (emission wavelength: 470 nm), GaAlAs
(Emission wavelength: 660 nm), an optical semiconductor device capable of full-color display was constructed.

More specifically, for an LED chip emitting red light, P-type GaAlAs is continuously grown on a P-type gallium arsenide substrate by a temperature difference liquid phase epitaxy method, and N-type GaAs is formed thereon.
lAs is formed. LED chips that emit blue light
Using liquid phase epitaxial crystal growth on N-type substrate
A PN junction semiconductor with iC as a light emitting region is formed. An LED chip that emits green light forms a PN junction by being continuously grown on an N-type gallium-phosphorus substrate crystal by an N-type and P-type epitaxial growth method by a liquid phase growth method. Thereafter, gold is vacuum-deposited on each semiconductor to form each electrode.

Each of the semiconductor wafers thus formed is connected to an LED.
After a scribe line was drawn by a scriber for use as a chip, the chip was cut into a size of 350 μm square by external force.

On the other hand, a mount for fixing each optical semiconductor
The lead was formed by punching using iron-containing copper. The lead frame has one inner lead on one side and two on the other side on both sides of the mount lead in parallel with the mount lead. The inner lead
As the distance from the mount lead increases, the height of the end surface decreases and the area of the end surface increases. Each of the above-mentioned LED chips was arranged in a straight line as shown in FIG. 1 on a copper cup having good surface reflectivity of the mount lead by using a die bonding apparatus and also by using an Ag paste.

An LED chip that emits red light (660 nm) having a long emission wavelength has a short emission wavelength of blue (4 nm).
(80 nm) and green (555 nm) LED chips. Next, an Au wire having a diameter of 0.03 mm was L
Wire bonding was performed to the surface electrode and the inner lead of the ED, respectively. The 2nd approach angle and the loop diameter of each conductive wire are substantially equal. This was placed in a cup filled with a non-colored epoxy resin and cured at 120 ° C. for 5 hours. Thus, 1,000 light emitting diodes in which the LED chips were sealed were formed. At this time, the wire touch in the optical semiconductor device was examined, and the results were compared as in Example 1, Comparative Example 1, and Comparative Example 2 and shown in Table 1. The optical semiconductor device was subjected to 5,000 cycles as a gas phase thermal shock test in which one cycle was performed at a temperature of −40 ° C. for 30 min and a temperature of 100 ° C. for 30 min. The open ratio after the gas phase thermal shock test was compared between Example 1, Comparative Example 1 and Comparative Example 2, and is shown in Table 2. As can be seen from Tables 1 and 2, the optical semiconductor device of the present invention has high reliability.

[Comparative Example 1] The height of the inner lead was
An optical semiconductor device was formed in the same manner as in Example 1, except that the height was gradually increased as the distance from the mount lead was increased. In this optical semiconductor device, the conductive wires and the 2nd approach angle are different from each other. 1000 optical semiconductor devices were formed and measured in the same manner as in Example 1.

Comparative Example 2 1000 optical semiconductor devices were formed in the same manner as in Example 1 except that the end faces of the inner leads were made equal in size. This optical semiconductor device was measured in the same manner as in Example 1.

Example 2 InGaN (emission wavelength: 525 nm), InGaN were used as semiconductors for the LED chips used in the optical semiconductor device, and green, blue and red light emitting layers, respectively.
It was configured using GaN (emission wavelength 470 nm) and GaAlAs (emission wavelength 660 nm). Specifically, a semiconductor wafer for an LED chip emitting red light is continuously deposited on a P-type gallium arsenide substrate by a temperature difference liquid phase epitaxy method.
Type GaAlAs is grown, and N-type GaAlAs is formed thereon.

The red LED chip was formed by forming a circular platinum metal film having a diameter of 0.15 mm as a surface electrode by vacuum evaporation. Gold was formed as an electrode layer on a P-type GaAlAs substrate on the back electrode side by vacuum evaporation.

A semiconductor wafer that emits blue and green light is obtained by depositing 5 μm and 1 μm N-type and P-type gallium nitride compound semiconductors on a 400 μm-thick sapphire substrate by MOCVD growth to form a heterostructure PN junction. It is. Note that a P-type gallium nitride semiconductor is
After doping with Mg which is a type dopant, annealing is performed to form. For the green and blue LED chips, the P-type semiconductor and / or the N-type semiconductor are partially dry-etched so that the emission center is shifted toward the emission observation surface side so that an electrical connection can be formed. Next, a W-Al alloy was sputtered on each semiconductor as an N-type electrode, and Au was sputtered on each semiconductor as a P-type electrode to form electrodes.

Thereafter, a scribe line was drawn by a scriber to use each semiconductor wafer as an LED chip, and then cut into 350 μm squares by external force.

A die bonding device is used to mount the LED chip on the mount lead of the copper lead terminal formed by punching out the inner lead away from the mount lead so that the area of the end face becomes smaller and the height of the end face becomes smaller. Fixed. The green LED chip, the blue LED chip and the red LED chip are made of Ag as a common adhesive.
Fix using paste. The red LED chip is thereby also electrically connected to the mounting leads.

Next, an Au wire having a diameter of 0.03 mm was wire-bonded to each electrode of the LED chip, a mount lead, and an inner lead by using a wire bonding apparatus. The N-type electrodes of the green and blue LED chips were connected to the mount leads by conductive wires. Each LE
The P-type electrode of the D chip is connected to the end face of the inner chip. Loop diameter of each conductive wire and 2nd
The approach angles are substantially the same. This was placed in a cup filled with a non-colored epoxy resin and cured at 120 ° C. for 5 hours.

Next, this light emitting diode is placed on a substrate by 7 ×.
Seven display devices were arranged in a matrix and each of them was electrically connected to a drive circuit. The optical semiconductor device formed in this manner can be a display device having excellent characteristics as in the case of using the optical semiconductor device of Example 1. Although each of the embodiments has been described with respect to the light emitting device, it is apparent that the light receiving device also exhibits excellent characteristics.

[0050]

As described above, the optical semiconductor device of the present invention and the display device using the same can improve semiconductor characteristics, optical characteristics and reliability.

By adopting the structure of the first aspect of the present invention, it is possible to obtain an optical semiconductor device in which the conductive wire is prevented from being broken, disconnected, or peeled off at the connection portion.

According to the structure of the second aspect of the present invention, the optical semiconductor elements can be arranged close to each other with a relatively simple structure while preventing the conductive wire from contacting. Further, it is possible to prevent the conductive wire from being broken, broken, or peeled off from the connection portion, and to provide an optical semiconductor device with improved light input / output efficiency.

According to the configuration of the third aspect of the present invention, a display device having high reliability and excellent light emission rate can be provided even in an environment with a high temperature and humidity cycle.

[Brief description of the drawings]

FIG. 1 is a schematic front view of an optical semiconductor device of the present invention.

FIG. 2 is a schematic longitudinal sectional view of the optical semiconductor device of the present invention.

FIG. 3 is a schematic enlarged view for explaining the optical semiconductor device of the present invention.

FIG. 4 is a schematic diagram of an optical semiconductor device shown for comparison with the present invention.

FIG. 5 is a schematic diagram of another semiconductor device shown for comparison with the present invention.

[Explanation of symbols]

101 LED chip 102 An inner surface with a sharp end face and a high end face
Lead 103 Mold 104 Inner lead 105 Mount lead 201 Conductive wire 301 Display device 302 Display panel 303 Drive circuit 304 LED 401 Mount lead 402 Optical semiconductor element 403 Inner lead 404 Lead frame 501 Mounting lead electrode 502 Bonding lead electrode 503 LED chip 504 Bonding wire 505 Mold resin

[Table 1]

[Table 2]

Claims (3)

[Claims] 1. A mounting lead on which a plurality of optical semiconductor elements are arranged, and a plurality of inner leads electrically connected to each of the optical semiconductor elements by a conductive wire.
An optical semiconductor device comprising: a lead; and a conductive wire connected from the optical semiconductor element to the inner lead has substantially the same loop shape and entrance angle. 2. A mounting lead on which a plurality of optical semiconductor elements that can be driven independently are arranged, and a plurality of inner leads electrically connected to each of the optical semiconductor elements by a conductive wire. An optical semiconductor device comprising: a tip portion of an inner lead sequentially increasing in a direction of an inner lead further away from an inner lead near a mount lead among the inner leads, and a tip portion of the inner lead. An optical semiconductor device, characterized in that the optical semiconductor device is low. 3. A display device comprising: a display panel on which the optical semiconductor devices according to claim 2 are arranged in a matrix; and a driving circuit electrically connected to the display panel.