JPH1041277A - Dry etching apparatus and dry etching method using it - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an apparatus and method for dry etching by which deposition of reaction products produced at dry etching is suppressed to bring about more effects. SOLUTION: The apparatus comprises an upper plasma generating electrode 21 and lower electrode 23 inside, vacuum treating chamber held in vacuum for dry etching a work A, and auxiliary vacuum-held chamber adjacent to the treating chamber. It has means 30a, 40a, 40b for adjusting the temp. in the treating chamber and upper and lower electrodes. Using such dry etching apparatus, the interior of the treating chamber and electrodes 21, 23 are heated at the same time to hold them at a const. temp. during etching.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a dry etching apparatus having a vacuum processing chamber and a preliminary chamber, and a dry etching method using the same.

[0002]

2. Description of the Related Art A photolithography technique and an accompanying etching technique are known as typical techniques of fine processing used in a manufacturing process of a semiconductor device or the like. The latter etching is performed to remove an unnecessary portion other than a portion left as a pattern after exposure by photolithography, or to remove an unnecessary portion which is used in a certain process but becomes unnecessary in a subsequent process. For such etching, dry etching, in which etching is performed using a plasma gas, is often used.

[0003] A dry etching apparatus for performing such etching (hereinafter sometimes simply referred to as an apparatus) is a vacuum processing chamber for performing dry etching on a material to be etched while the inside thereof is kept in a vacuum. In many cases, a spare chamber is provided adjacent to the vacuum processing chamber and has a vacuum maintained inside. This is to prevent air from flowing into the vacuum processing chamber for performing etching. When the atmosphere flows into the vacuum processing chamber, a reaction product generated at the time of etching absorbs moisture in the air to be solidified and adheres to the inner wall of the processing chamber. In addition, solidified reaction products (hereinafter, also referred to as particles) from the side wall or the top wall of the vacuum processing chamber are peeled off or wound up by the flow of gas in the vacuum processing chamber, so that the surface of the workpiece is etched. May also adhere. When particles adhere to the surface of the material to be etched, they function in the same manner as the resist film, so that portions that would otherwise need to be etched remain without being removed (hereinafter, this is referred to as film residue). ). For this reason, there is a possibility that the processing accuracy of the material to be etched is reduced or the product is defective. Since complicated maintenance is required to remove the reaction products attached to the inside of the apparatus, development of an apparatus capable of suppressing the adhesion of the reaction products has been studied.

For example, according to the apparatus disclosed in Japanese Patent Application Laid-Open No. H6-177074, a means for heating the inside of the above-mentioned spare chamber is provided. Also, JP-A-64-42583
According to the apparatus disclosed in Japanese Patent Application Laid-Open Publication No. H10-209, a means for irradiating infrared light to the surface of a semiconductor wafer is provided. Thus, by heating the prechamber and the material to be etched,
The purpose is to suppress the adhesion of the reaction product.

[0005]

However, none of the conventional apparatuses has been able to obtain a satisfactory effect in suppressing the adhesion of reaction products to the surface of the vacuum processing chamber or the material to be etched. In addition, as the number of processes of the material to be etched progresses, reaction products adhered to the material to be etched hinder the reduction of the etching rate.

Therefore, there has been a demand for a dry etching apparatus capable of expecting a further effect in suppressing the adhesion of reaction products to the vacuum processing chamber and the surface of the material to be etched. In addition, the vacuum treatment chamber and the surface of the material to be etched,
There has been a demand for a dry etching method capable of expecting a further effect in suppressing the adhesion of reaction products.

[0007]

For this reason, first, according to the dry etching apparatus of the present invention, an upper electrode and a lower electrode for plasma generation are provided inside, and the inside is kept in a vacuum state. In a dry etching apparatus including a vacuum processing chamber for performing dry etching on a material to be etched and a preliminary chamber provided adjacent to the vacuum processing chamber and holding the inside of the vacuum processing chamber, the inside of the vacuum processing chamber ,
A means for controlling the temperature of each of the upper electrode and the lower electrode is provided.

Thus, an apparatus having a parallel plate type vacuum processing chamber having a so-called upper electrode and lower electrode,
Means (hereinafter, also referred to as temperature control means) for controlling the temperature in three places of the inside of the vacuum processing chamber, the upper electrode, and the lower electrode were provided. For this reason, vaporization of the reaction product generated at the time of etching is promoted, and it is possible to further prevent particles from adhering to the vacuum processing chamber or the surface of the material to be etched.

The temperature control means is provided, for example, as follows.
In the case of the above-mentioned temperature control means, for example, a heater and a temperature sensor are installed in the side wall of the vacuum processing chamber, and these are connected to a temperature controller. In the case of the above temperature control means, for example, a heat exchanger incorporating a heater and a temperature controller is connected to the upper electrode and the lower electrode via a heat medium circulation path. This heat exchanger is connected to a temperature sensor, and the temperature sensor is attached to the upper electrode and the lower electrode. The invention is not limited to this, and various suitable arrangements are possible.

Secondly, according to the dry etching method of the present invention, an upper electrode and a lower electrode for generating plasma are provided inside, and the inside is kept in a vacuum state.
Dry etching is performed using a dry etching apparatus including a vacuum processing chamber for performing dry etching on a material to be etched and a preliminary chamber provided adjacent to the vacuum processing chamber and holding the inside thereof at a vacuum. In this case, the inside of the vacuum processing chamber and each of the upper electrode and the lower electrode are simultaneously heated and etched while being maintained at a constant temperature.

As described above, since the vacuum processing chamber, the upper electrode, and the lower electrode are simultaneously heated to a high temperature and are kept at a constant temperature using the dry etching apparatus of the present invention, the vacuum etching is performed. Particles resulting from the reaction products can be prevented from adhering to both the processing chamber and the material to be etched. The temperature inside the vacuum processing chamber, the upper electrode, and the lower electrode need not all be the same temperature. Considering the vapor pressure of the reaction product by etching, etc., for example, the temperature inside the vacuum processing chamber is set to about 80 ° C., and the temperature of the upper electrode and the lower electrode is set to about 110 ° C., so that a suitable temperature setting is made. .

[0012]

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a block diagram showing an embodiment of the present invention; Each of the drawings merely schematically shows the size, shape, positional relationship, and the like of each component so that the invention can be understood. Further, numerical conditions such as materials used, processing time, processing temperature, and the like, which are mentioned in the following description, are merely preferable examples within the scope of the present invention. Therefore, these inventions are not limited only to these conditions. In the drawings, hatching or the like showing a cross section is omitted.

<First Embodiment> FIG. 1 is a schematic plan view illustrating a dry etching apparatus and a dry etching method according to a first embodiment of the present invention.
The configuration of the dry etching apparatus 10 used here is as follows:
The device is shown without the top wall.

According to the dry etching apparatus of the present invention, a vacuum processing chamber having an upper electrode and a lower electrode for generating plasma therein and performing dry etching on a material to be etched in a state where the inside is kept in a vacuum. And a preparatory chamber provided adjacent to the vacuum processing chamber and having a vacuum maintained inside,
Means for controlling the temperature of the inside of the vacuum processing chamber and each of the upper electrode and the lower electrode are provided. Here, the device configuration is as follows. The apparatus 10 is adjacent to an atmosphere transfer robot 100, that is, a robot which is transferred to the etching apparatus from the outside and is exposed to the atmosphere. In order to carry the material to be etched from the robot 100 into the apparatus 10,
First spare room 1 for unloading from 0 to robot 100
1 is provided. Further, a second preliminary chamber 15 is provided adjacent to the first preliminary chamber 11 via a valve 13. The inside of the second preliminary chamber 15 is always kept at a high vacuum, and has a structure for preventing the air from flowing into vacuum processing chambers (first vacuum processing chamber 20a and second vacuum processing chamber 20b) described later. . A transfer arm 1 for transferring the material to be etched into the vacuum processing chamber is provided in the second preliminary chamber 15.
5a is provided. A first vacuum processing chamber 20a via a valve 17a and a second vacuum processing chamber 20a via a valve 17b on both sides of the second preliminary chamber 15 and on both sides in a direction at 90 ° to the first preliminary chamber 11. A vacuum processing chamber 20b is provided. The reason why the two vacuum processing chambers are provided is to increase the number of processed materials to be etched. Other components, for example, the inlet and exhaust ports of the etching gas,
It is omitted here. Next, the first and second vacuum processing chambers 20a and 20b will be described in detail.

FIG. 2 shows the first of the devices 10 shown in FIG.
FIG. 4 is a schematic configuration explanatory view for describing the configuration of second vacuum processing chambers 20a and 20b. Since these two vacuum processing chambers have the same configuration, only the first vacuum processing chamber 20a will be described.

The vacuum processing chamber 20a has an upper electrode 21 and a lower electrode 23 for generating plasma therein, and is a so-called parallel plate type vacuum processing chamber. A high frequency power supply 2 for applying a high frequency of 13.56 MHz is applied to the upper electrode 21.
5 is connected, and the lower electrode 23 is connected to the ground 27. The lower electrode 23 is also used as a stage on which the material A to be etched is placed. The upper electrode 21 can be moved up and down by a mechanism such as a cylinder, so that the distance to the material to be etched can be adjusted.

The side wall 29 of the vacuum processing chamber 20a is made of an aluminum material having excellent thermal conductivity, and a heater 31 and a first temperature sensor 33 are embedded in a part of the side wall 29. A temperature controller 35 for adjusting the heater temperature is connected to the first temperature sensor 31 and the first temperature sensor 33. The heater 31, the first temperature sensor 33, and the temperature controller 35 constitute a first temperature adjusting means 30 for adjusting the temperature inside the vacuum processing chamber 20a. In this example, the heater 31 can heat up to 80 ° C.

Further, the heat exchanger 37 and the heat exchanger 37
And a part of the first heat medium circulation path 39a is provided in the circulation path in the upper electrode 21 of the first heat medium circulation path 39a. The second temperature sensor 41a for detecting the temperature of the circulating heat medium constitutes a second temperature adjusting means 40a for adjusting the temperature of the upper electrode 21.

Similarly, a heat exchanger 37 is connected to the heat exchanger 37, and a part thereof is connected to the lower electrode 23.
And the lower electrode 23 of the portion in the second heat medium circulating path 39b.
The third temperature sensor 41b, which is provided in the internal circulation path and detects the temperature of the circulating heat medium, constitutes a second temperature adjusting means 40b for adjusting the temperature of the lower electrode 23. .

Here, a chiller is used as the heat exchanger 37, and a heater for heating the heat medium and a temperature controller are built in. The second and third temperature control means 40a and 40b share the same heat exchanger 37 here. In FIG. 2, the second
And the third temperature sensors 41a and 41b are the first temperature sensors.
Although shown outside the second heat medium circulation paths 39a and 39b, these temperature sensors 41a and 41b are actually provided in the heat medium circulation paths. In this example,
These second and third temperature control means 40a and 40b
As a result, the upper electrode 21 and the lower electrode 23
Up to heating is possible.

The second temperature adjusting means 40a has a mechanism for adjusting the temperature of the upper electrode 21 as follows. The heat medium heated by the heater in the heat exchanger 37 is supplied from a heat medium supply port (not shown) of the first heat medium circulation path 39a connected to the heat exchanger 37, and the supplied heat medium is the second heat medium. The heat medium is returned to the chiller (heat exchanger 37) from a discharge port (not shown) of the heat medium circulation path 39a. First heat medium circulation path 3
9a, a part thereof passes through the upper electrode 21, and a second temperature sensor 41a for detecting the temperature of the heat medium is provided in the first heat medium circulation path 39a. When the temperature is lowered, the temperature controller in the heat exchanger 37 adjusts the temperature of the heater so as to be adjusted to a constant temperature. Further, the third temperature adjusting means 40b also has a mechanism for adjusting the temperature of the lower electrode 23 as follows, similarly to the second temperature adjusting means 40. Second heat medium circulation path 3 connected to heat exchanger 37
9b, a heat medium heated by a heater in the heat exchanger 37 is supplied from a heat medium supply port (not shown), and the supplied heat medium flows through a heat exchanger (not shown) of the second heat medium circulation path 39b. It is returned to 37. Second heat medium circulation path 3
9b, a part thereof passes through the lower electrode 23, and a third temperature sensor 41b for detecting the temperature of the heat medium is provided in the second heat medium circulation path 39b. Regarding the configuration of the second vacuum processing chamber 20b, the first vacuum processing chamber 20a
Since the configuration is exactly the same as that described above, the description is omitted.

Next, an etching method using the apparatus 10 will be described.

According to the etching method of the present invention, as described above, the material to be etched is dry-etched while the upper electrode and the lower electrode for plasma generation are provided inside and the inside is kept in a vacuum. When dry etching is performed by a dry etching apparatus provided with a vacuum processing chamber for performing the dry etching and a preliminary chamber provided adjacent to the vacuum processing chamber and holding the inside thereof at a vacuum, the inside of the vacuum processing chamber and the upper The feature is that the electrode and the lower electrode are simultaneously heated and etched while being maintained at a constant temperature. Here, the material to be etched A
(FIG. 2) was used as a semiconductor wafer. Also, the object to be removed is no longer necessary after photolithography,
A TiN (titanium nitride) film was used as a reflection protection film. The reflection protective film is used to reduce the reflectance of the metal wiring during exposure to reduce light interference. Hereinafter, the etching method will be described with reference to FIGS.

First, the first preparatory chamber 11 is
N ₂ (nitrogen) inlet port (not shown) is purged with N ₂ to atmospheric pressure. Thereafter, the semiconductor wafer is transferred from the atmospheric transfer robot 100 to the first preliminary chamber 11 in the apparatus 10. Next, the first preliminary chamber 11 is evacuated. This is performed by a vacuum pump connected to a vacuum exhaust port (not shown) in the first preliminary chamber 11. Next, valve 1
3 is opened, and the semiconductor wafer is transferred to the second preliminary chamber 15. The second preparatory chamber 15 is always kept at a high vacuum, so that the atmosphere does not flow into the vacuum processing chamber for performing the etching process. Next, the valve 17a is opened, and the semiconductor wafer is moved to the first arm by the transfer arm 15a of the second preliminary chamber 15.
It is transported to the vacuum processing chamber 20a. Thereafter, dry etching is performed under the etching conditions described later. Next, in the same process, the valve 17a is opened and the second preliminary chamber 20 is opened.
The semiconductor wafer is also transferred to b and an etching process is performed.
At this time, the inside of the vacuum processing chamber 10, the upper electrode 21, and the lower electrode 23 are simultaneously heated and maintained at a constant temperature. After the etching process has been completed in the first vacuum processing chamber 20a, the semiconductor wafer is unloaded from the first vacuum processing chamber 20a by the transfer arm 15a of the second preliminary chamber 15 and passed through the valve 13 to the first preliminary chamber 11, the atmospheric transfer. Robot 100
Sent to. The semiconductor wafer that has been dry-etched in the second vacuum processing chamber 20b is also sent to the atmospheric transfer robot 100 in the same process. This is repeated, and the semiconductor wafer is sequentially etched.

Here, the etching conditions in the vacuum processing chamber will be described in detail. Table 1 shows a material to be etched (a semiconductor wafer having a TiN film as an object to be removed) in the first embodiment.
3 shows the etching conditions for.

[0026]

[Table 1]

Here, RF power indicates high frequency power. The term “EPD” in the term of the etching time means that the end point of the etching is detected by the end point detect method. Further, "OE = 40%" indicates that the setting of the over-etching time is increased by 40%. For example, assuming that an etching time of about 10 minutes is usually required to remove a film having a certain thickness, this means that the etching time is set to 14 minutes.

After etching under the above conditions, it was examined using H ₂ O ₂ (aqueous hydrogen peroxide) whether or not reaction products had adhered to the vacuum processing chamber and the semiconductor wafer. When the reaction to the product and H ₂ O ₂ reacts, by utilizing the fact that the color yellow, the vacuum processing chamber 20a and the 20b, flowing the H ₂ O _2. As a result, no coloring occurred in any of the vacuum processing chamber and the semiconductor wafer. Therefore, it can be understood that no particles are attached.

Under the conditions shown in Table 1 above, the TiN film was etched on 50 semiconductor wafers, and the wafers were numbered from 1 to 50 in the order in which the etching was performed, and wafer numbers 1, 13, 25, 26, The change of the etching rate and the uniformity of the etching in the wafer surface were examined for six wafers 38 and 50. FIG. 3 shows the result. In particular, FIG. 3A is a graph showing a change in the etching rate (Å / min (min)) of six wafers, where the vertical axis represents the etching rate (Å / min (min)) and the horizontal axis represents 2 shows a wafer number. FIG.
(B) is a graph showing the uniformity of the etching in the wafer surface, in which the vertical axis shows the uniformity (±%) and the horizontal axis shows the wafer number.

Here, the etching rate is calculated using the following equation.

(Average value of film thickness of film to be removed before etching−Average value of film thickness of film to be removed after etching) /
Etching time The uniformity refers to the uniformity of the etching rate in the plane of the wafer. The etching rate is calculated at nine points in the plane of each wafer, and is calculated using the following equation.

{(Maximum value of etching rate in plane−minimum value of etching rate) / (maximum value of etching rate−maximum value of etching rate−minimum value of etching rate)} × 100 From FIG. The etching rate is 3100-3
It shows a range of 500 (Å / min), and it can be seen that it does not decrease as the number of processed wafers increases. FIG. 3B shows that the uniformity is in the range of 6 to 9 (±%), and it can be seen that the uniformity does not decrease as the number of processed wafers increases. This indicates that film residue hardly occurs on the wafer.

Next, FIG. 4 shows the result of examining the temperature dependence of the etching rate of the TiN film. FIG. 4 shows the upper electrode 2
1 is a graph showing the change in the etching rate of the TiN film of each wafer (sample) when the temperatures of the first electrode and the lower electrode 23 are set to 60 ° C., 90 ° C., and 110 ° C. / Min), and the horizontal axis shows the temperature (° C.) of the upper electrode and the lower electrode. As can be understood from this figure, the etching rate of the TiN film is 60 ° C. for the upper electrode and the lower electrode.
At about 2000 (Å / min), 90 ° C
In this case, it indicates about 2400 (Å / min). Also, 1
At 10 ° C., it shows about 3100 (Å / min), and it can be seen that the etching rate increases almost in proportion to the temperature rise. Therefore, it is presumed that no film residue of the TiN film occurs.

<Second Embodiment> The second embodiment is basically the same as the first embodiment. Here, the etching apparatus, the etching method, the etching conditions, and the like were the same as in the first embodiment, but the film to be removed was a polysilicon film instead of the TiN film. Then, etching was performed on 50 semiconductor wafers under the conditions shown in Table 1 above, and wafers were numbered from 1 to 50 in the order in which the etching was performed.
The change of the etching rate and the uniformity of the etching in the wafer surface were examined for the six wafers 6, 38 and 50. FIG. 5 shows the result. In particular, FIG. 5A shows the etching rate (Å / min) of six wafers.
(Min)) is a graph showing the change of the etching rate (Å / min (min)) on the vertical axis and the wafer number on the horizontal axis. FIG. 5B is a graph showing the uniformity of the etching on the wafer surface. The vertical axis represents the uniformity (±%), and the horizontal axis represents the wafer number.

From FIG. 5A, the etching rate is:
It shows a range of 3400 to 3800 (Å / min), and it can be seen that it does not decrease as the number of processed wafers increases. In addition, from FIG.
6 (±%), which also shows that it does not decrease as the number of processed wafers increases. Therefore, film residue hardly occurs on the wafer.

Next, FIG. 6 shows the result of examining the temperature dependence of the etching rate of the polysilicon film. FIG. 6 shows that the temperatures of the upper electrode 21 and the lower electrode 23 are 60 ° C., 90 ° C.
7 is a graph showing changes in the etching rate of the polysilicon film of each wafer (sample) when the temperature is set to 110 ° C. and 110 ° C., and the vertical axis represents the etching rate (Å / mi).
n), the horizontal axis shows the temperature (° C.) of the upper electrode and the lower electrode. As can be understood from this figure, the etching rate of the polysilicon film is approximately 3500 (Å) regardless of the temperature of the upper electrode and the lower electrode.
/ Min), which indicates that the etching rate does not decrease as the temperature rises. Therefore, it is presumed that no film residue of the polysilicon film occurs.

<Third Embodiment> An etching apparatus, an etching method, etching conditions and the like according to the first embodiment are described.
Same as in the first embodiment, except that after transferring the semiconductor wafer to the first and second processing chambers, the heater 31 and the heat exchangers 37a and 37b are operated, and the wafer is left for 10 to 30 seconds. Thus, the wafer temperature was stabilized. When an etching process was performed thereafter, the variation (uniformity) of the etching rate in the wafer surface was improved. For example, when the uniformity is ± 13.8% when the wafer is not left, if the etching is performed under exactly the same conditions except that the wafer is left, the uniformity is ± 5.2.
%. Therefore, it was found that the uniformity was improved when the wafer temperature was stabilized.

The other parts are the same as those in the first embodiment, and a detailed description will be omitted.

It is clear that the present invention is not limited to the first, second and third embodiments described above. For example, although an etching apparatus having two vacuum processing chambers is used here, one vacuum processing chamber may be used. Further, here, a temperature adjusting means in the vacuum processing chamber,
Although the temperature control means for the upper and lower electrodes are different, they may be the same or all different. For example, heaters for all temperature control means,
Temperature adjusting means including a temperature sensor and a temperature controller may be used, and all temperature adjusting means may be used as a temperature adjusting means including a heat exchanger, a heat medium circulation path, and a temperature sensor.

Although one heat exchanger is commonly used in the temperature control means for the upper electrode and the lower electrode, they may be used independently. In addition, the upper electrode, the lower electrode, and the temperature control means in the vacuum processing chamber
In the case of using a temperature adjusting means including a heat medium circulation path and a temperature sensor, one heat exchanger may be used in common, or each heat exchanger may be used independently.

[0041]

As is apparent from the above description, first, according to the dry etching apparatus of the present invention, a dry etching apparatus including a vacuum processing chamber having an upper electrode and a lower electrode and a preliminary chamber. In the above, means for adjusting the temperature of the inside of the vacuum processing chamber, the upper electrode, and the lower electrode were provided. For this reason, by heating each part using this temperature control means, it is possible to promote the vaporization of the reaction product generated at the time of etching. Therefore, it is possible to further prevent the particles from adhering to the vacuum processing chamber and the surface of the material to be etched. Secondly, according to the dry etching method of the present invention, when performing the dry etching using the above-described dry etching apparatus, the inside of the vacuum processing chamber and each of the upper electrode and the lower electrode are simultaneously heated. Etching is performed while keeping the temperature constant. For this reason, vaporization of the reaction product generated at the time of etching is promoted, and it is possible to further prevent particles caused by the reaction product from adhering to the vacuum processing chamber and the surface of the material to be etched.

Therefore, there is little fear that a film residue of the material to be etched occurs, and the etching can be performed with high processing accuracy.

[Brief description of the drawings]

FIG. 1 is a schematic plan view showing an example of a dry etching apparatus.

FIG. 2 is a schematic sectional view of a vacuum processing chamber.

3A is a graph showing a change in an etching rate of a TiN film of six wafers, and FIG. 3B is a graph showing an etching uniformity in a wafer surface.

FIG. 4 is a graph showing the temperature dependence of the etching rate of a TiN film.

5A is a graph showing a change in the etching rate of the polysilicon film of six wafers, and FIG. 5B is a graph showing the uniformity of etching in the wafer surface.

FIG. 6 is a graph showing the temperature dependence of the etching rate of a polysilicon film.

[Explanation of symbols]

 10: Dry etching apparatus 11: First preliminary chamber 13, 17a, 17b: Valve 15: Second preliminary chamber 20a: First vacuum processing chamber 20b: Second vacuum processing chamber 21: Upper electrode 23: Lower electrode 25: High frequency power supply 27: Ground 29: Side wall 30: First temperature control means 31: Heater 33: First temperature sensor 35: Temperature controller 37: Heat exchanger (chiller) 39a: First heat medium circulation path 39b: Second heat medium circulation path 40a: second temperature adjusting means 40b: third temperature adjusting means 41a: second temperature sensor 41b: third temperature sensor

Claims (4)

[Claims] 1. A vacuum processing chamber having an upper electrode and a lower electrode for generating plasma therein and performing dry etching on a material to be etched in a state where the inside is maintained in a vacuum, and a vacuum processing chamber adjacent to the vacuum processing chamber. A dry etching apparatus provided with a preparatory chamber whose inside is kept at a vacuum, wherein a means for controlling the temperature of the inside of the vacuum processing chamber, each of the upper electrode and the lower electrode, is provided. A dry etching apparatus characterized in that: 2. The dry etching apparatus according to claim 1, wherein the means for adjusting the temperature comprises: a first temperature adjusting means for the vacuum processing chamber; a second temperature adjusting means for the upper electrode; A third temperature control means for the lower electrode, wherein the first temperature control means includes a heater and a first temperature sensor embedded in each other in a wall of the vacuum processing chamber, and the heater and the first temperature. A second temperature control means connected to a sensor for controlling a temperature of the heater, the second temperature control means being connected to the heat exchanger and being partially connected to the upper electrode; And a second heat medium circulation path provided in the first heat medium circulation path and detecting the temperature of the circulating heat medium.
A third heat regulation circuit, the third temperature regulation means comprising: a second heat medium circuit connected to the heat exchanger and partially passing through the inside of the lower electrode. And a third temperature sensor provided in the second heat medium circulating path and detecting the temperature of the circulating heat medium. 3. A vacuum processing chamber having an upper electrode and a lower electrode for plasma generation therein and performing dry etching on a material to be etched while maintaining the inside at a vacuum, and a vacuum processing chamber adjacent to the vacuum processing chamber. In performing a dry etching with a dry etching apparatus provided with a preliminary chamber having an inside kept in vacuum, the inside of the vacuum processing chamber, each of the upper electrode and the lower electrode are simultaneously heated. A dry etching method characterized in that etching is performed while maintaining a constant temperature. 4. The dry etching method according to claim 3, wherein the material to be etched is TiN (titanium nitride).