JPH10335701A - Manufacturing method for nitride gallium based compound semiconductor light emitting element - Google Patents

Abstract

PROBLEM TO BE SOLVED: To obtain a proper regrowing boundary by laminating a revaporizing layer on a surface layer of a laminated construction which is laminated by the MOVPE method and by making a regrowing layer regrow by the MBE method on the laminated construction which is exposed by evaporating the reevaporating layer in the MBE device. SOLUTION: A substrate 1 is introduced on a susceptor of the MOVPE device and a surface of the substrate 1 is exposed in the nitrogen or hydrogen atmosphere. After that an AlGaN buffer layer 2, an n-type GaN buffer layer 3, an n-type AlGaN clad layer 4, a non-dope InGaN clad layer 5, an Mg dope AlGaN clad layer 6 and an Mg dope InGaN revaporizing layer 7 are made to grow in order on the substrate 1. After that a wafer is introduced in an MBE device and the Mg dope InGaN revaporizing layer 7 is revaporized in the nitrogen atmosphere over 400 deg.C of substrate temperature or 600 deg.C preferably and a surface of the Mg dope AlGaN clad layer 6 is exposed. After that a p-type GaN contact layer is made to grow.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a gallium nitride-based compound semiconductor light emitting device capable of emitting light in a blue region to an ultraviolet region, and more particularly, to an MBE method on a laminated structure grown and formed by MOVPE. And a method for manufacturing a gallium nitride-based compound semiconductor light emitting device in which a regrowth layer is stacked.

[0002]

2. Description of the Related Art FIG. 5 is a schematic sectional view of a conventional gallium nitride compound semiconductor light emitting device. Sapphire substrate 100
An AlN buffer layer 200 and an n-type GaN layer 300 are stacked thereon by a metal organic chemical vapor deposition (MOVPE) method. On the n-type GaN layer 300, an n-type GaN layer 400 and an n-type InG
The aN light emitting layer 500 and the p-type GaN layer 600 are sequentially stacked. Finally, the p-type electrode 700 is formed on the p-type GaN layer 600.
Is formed, and a gallium nitride-based compound semiconductor light emitting device structure manufactured by forming an n-type electrode 800 on an n-type GaN layer 300 is disclosed in, for example, J. A. P. Vol. 34 (1
995) pp. 1429-1431.

Generally, the carrier concentration of a p-type impurity produced by the MBE method is about one digit higher than that of the MOVPE method. And M
The p-type gallium nitride-based compound semiconductor manufactured by the OVPE method requires a step of activating the p-type impurity by heat treatment (for example, 800 ° C., 20 minutes). However, the p-type gallium nitride manufactured by the MBE method is required. A system compound semiconductor does not require a heat treatment step for activating p-type impurities. For this reason, it is very suitable to use the MBE method for producing the p-type GaN contact layer 600 and the like.

[0004]

However, the gallium nitride based compound semiconductor light emitting device has a high driving voltage of 6 V at 20 mA, which is as high as 6 V. This is MOV
Since the n-type GaN layer 400, the n-type InGaN light emitting layer 500, and the p-type GaN layer 600 are directly grown on the n-type GaN layer 300 manufactured by the PE method by the MBE method, n
Resistance of the regrowth interface between the n-type GaN layer 300 and the n-type GaN layer 300 increases the series resistance of the element and increases the driving voltage, so that a long-life gallium nitride-based compound semiconductor light emitting element has not been obtained. . This is because, when regrown by a molecular beam epitaxy method (MBE method) on a layered structure laminated by a metal organic chemical vapor deposition method (MOVPE method), the surface of the underlying growth layer is regrown. Exposure to the atmosphere causes oxidation of the exposed surface and adhesion of contaminants, etc., and even if a regrowth layer is laminated on this exposed surface, there is a problem that a good regrowth interface and a growth layer cannot be obtained. Occurs.

[0005] For this reason, the gallium nitride-based compound semiconductor light emitting device has a high driving voltage of 6 V at 20 mA, which is as high as 6 V. This is because the growth layer is directly grown by MBE on the layer grown by MOVPE.

[0006]

SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and is directed to a metal organic chemical vapor deposition (MO) method.
VPE method), a step of continuously forming a re-evaporation layer on the surface layer of the layer structure by MOCVD, and a step of forming the re-evaporation layer by molecular beam epitaxy (MOPE method). MBE) a step of evaporating in a device, and a step of re-growing a growth layer on the laminated structure exposed by evaporating the reevaporation layer by MBE. Provided is a method for manufacturing a gallium-based compound semiconductor light emitting device.

[0007] The method may further include, between the step of forming the reevaporation layer and the step of evaporating the reevaporation layer, a step of processing the surface of the laminated structure by etching or the like.

Further, the reevaporation layer is made of In _z Ga _{1 -zN.}
(0 <z ≦ 1).

[0009] The method is characterized in that the substrate temperature in the step of evaporating the reevaporation layer is 400 ° C. or more and 1100 ° C. or less.

The metal organic chemical vapor deposition method (MOVP)
E)) forming a laminated structure made of a semiconductor by a method comprising the step of laminating a gallium nitride-based compound semiconductor doped with a p-type impurity, and performing a heat treatment step of evaporating the reevaporation layer. It is characterized in that a doped gallium nitride-based compound semiconductor is modified into a p-type gallium nitride-based compound semiconductor.

[0011]

BEST MODE FOR CARRYING OUT THE INVENTION In the embodiment of the present invention, in order to perform the first crystal growth, a substrate 1 is introduced on a susceptor of a MOVPE apparatus, the substrate temperature is raised to about 1200 ° C., and the surface of the substrate 1 is heated. Exposure in a nitrogen or hydrogen atmosphere. Next, the temperature of the substrate 1 is lowered to about 500 ° C. to 650 ° C., and an Al _0.1 Ga _0.9 N buffer layer 2 is formed on the substrate (here, the buffer layer may be a binary mixed crystal made of GaN or AlN).
The substrate is grown at a temperature of about 0 ° to 1 μm,
Temperature to about 1 to 4 μm, and then n-type GaN buffer layer 3 is formed on n-type GaN buffer layer 3.
l _0.1 Ga _0.9 N cladding layer 4 is grown to a thickness of about _0.1 to 0.3 μm, the substrate temperature is lowered to about 800 to 850 ° C., and a non-doped In _0.32 Ga _0.68 N active layer 5 is grown. Temperature rise to about 1050 ° C Mg-doped Al _0.1 G
a _0.9 N clad layer 6 is grown to a thickness of about 0.1 to 0.3 μm, and further, the substrate temperature is lowered to about 800 to 850 ° C., and the Mg-doped In _z Ga ₁ -z N re-evaporation layer 7 (here, z The range is more than 0 and 1 or less, more preferably 0.5 or more and 1
Below) grow 10-200 °. FIG. 1A is a cross-sectional view of the gallium nitride based semiconductor light emitting device manufactured up to this point. Here, since the reevaporation layer does not re-evaporate,
The layer is not limited to a single crystal layer, but may be a polycrystalline or amorphous layer.

[0012] Once the wafer is taken out of the MOVPE apparatus, the wafer is again introduced into the MBE apparatus,
Nitrogen is supplied onto the wafer at a power of 350 to 400 W and a nitrogen flow rate of 5 to 10 sccm for 5 to 10 minutes, and in a nitrogen atmosphere, a substrate temperature of about 400 ° C. or more, preferably 600 ° C., and Mg-doped In _z Ga ₁ -zN. The re-evaporation layer 7 (here, the range of z is more than 0 and 1 or less, more preferably 0.5 or more and 1 or less) is re-evaporated, and Mg-doped Al _0.1 Ga _0.9 N
The surface of the cladding layer 6 is exposed. FIG. 1B is a cross-sectional view of the gallium nitride based semiconductor light emitting device manufactured up to this point.

Next, the substrate temperature is raised to about 700 ° C., and a p-type GaN contact layer 8 is grown to about 0.1 to 1 μm. For example, an MB equipped with an ECR device or an RF device
E unit. FIG. 1C is a cross-sectional view of the gallium nitride-based semiconductor light emitting device manufactured up to this point.

The reevaporation layer is made of, for example, InAs, InG
It may be composed of aAs, GaAs or the like. In that case, the re-evaporation is performed in an As atmosphere, the re-evaporation temperature is 400 ° C. or more,
A substrate temperature of 550 ° C or higher and 680 ° C or higher can be used. The re-evaporation temperature may be 1100 ° C. or less which does not affect the AlGaN layer and the GgN layer.
Particularly preferably, it is 800 ° C. or lower.

Here, since the underlayer surface is exposed in the device, a clean underlayer surface can be exposed.
For this reason, a high-quality regrowth interface and a regrown layer can be realized. Furthermore, since the Mg-doped layer grown by the MOVPE method changes to p-type during the re-evaporation step in a nitrogen-free atmosphere containing no hydrogen by the MBE method, no special heat treatment after growth is required. The process can be simplified.

As described above, the metal organic chemical vapor deposition (MOVP)
E), the surface layer of the laminated structure laminated by the re-evaporation layer is constituted by the re-evaporation layer, for example, by the molecular beam epitaxial method (MBE method). , A gallium nitride-based compound semiconductor light emitting device or a gallium nitride-based compound semiconductor laser having a high-quality regrowth interface and a regrown layer can be realized. Hereinafter, embodiments of the present invention will be described in more detail.

Example 1 A gallium nitride based semiconductor light emitting device was manufactured by metal organic chemical vapor deposition (hereinafter referred to as MOVPE).
Substrate), ammonia as a group V raw material, III
Group material: trimethylgallium, trimethylaluminum, trimethylindium, biscyclopentadienyl magnesium (Cp ₂ Mg) as p-type impurity, n
Monosilane is used as a mold impurity, and hydrogen or nitrogen is used as a carrier gas.

A method for manufacturing a gallium nitride based semiconductor light emitting device of the present invention will be described in detail with reference to FIGS.

In order to perform the first crystal growth, the sapphire substrate 11 is introduced onto a susceptor of the MOVPE apparatus, the substrate temperature is raised to about 1100 ° C., the substrate surface is exposed to a nitrogen or hydrogen atmosphere, and the surface is cleaned. Apply. Next, the substrate temperature of the sapphire substrate 11 is decreased to about 550 ° C., and an Al _0.1 Ga _0.9 N buffer layer 12 is grown on the sapphire substrate 11 by about 500 ° C.
The temperature was raised to about 50 ° C. to make the n-type GaN buffer layer 13 4 μm.
Then, an n-type Al _0.1 Ga _0.9 N clad layer 14 is grown on the n-type GaN buffer layer 13 to a thickness of about 0.15 μm, the substrate temperature is lowered to about 850 ° C., and undoped In _0.32 Ga _0.68 N The active layer 15 is grown by 30 ° and then
Raising the substrate temperature to about 1050 ° C. Mg-doped Al _0.1
A Ga _0.9 N cladding layer 16 is grown to about 0.15 μm,
Further, the substrate temperature is lowered to about 800 ° C.
The nN re-evaporation layer 17 is grown by 200 °. FIG. 2A is a cross-sectional view of the gallium nitride based semiconductor light emitting device manufactured up to this point.
Shown in

Once the wafer is taken out of the MOVPE apparatus, a regrowth layer is laminated on the wafer. For this regrowth, the MBE method was used, and nitrogen and I
Gallium, aluminum and indium are used as group II raw materials, and magnesium is used as a p-type impurity.

For example, the MBE apparatus is an MBE apparatus that includes ECR plasma or RF plasma and supplies nitrogen onto a substrate.

The wafer was introduced into an RF-MBE apparatus, and nitrogen was supplied onto the substrate at an RF power of 400 W and a nitrogen flow rate of 5 sccm for 10 minutes.
The doped InN layer 17 is re-evaporated to obtain Mg-doped Al _0.1
The surface of the Ga _0.9 N cladding layer 16 is exposed. Here, since the underlayer surface is exposed in the apparatus, a clean M
The g-doped Al _0.1 Ga _0.9 N cladding layer surface 18 can be exposed. Therefore, in the next step, a high-quality regrowth interface and regrowth layer can be realized. FIG. 2 is a cross-sectional view of the gallium nitride-based semiconductor light emitting device thus far manufactured.
(B).

Next, the substrate temperature is raised to about 700 ° C., and the p-type GaN contact layer 19 (carrier concentration is 1 ×
10 ¹⁹ cm ⁻³ ) is grown to about 0.5 μm. FIG. 2 is a cross-sectional view of the gallium nitride-based semiconductor light emitting device thus far manufactured.
It is shown in (c).

Next, etching is performed until the surface of the n-type GaN buffer layer 13 is exposed in order to attach an electrode for n-type using the mask 20. FIG. 2D is a cross-sectional view of the gallium nitride based semiconductor light emitting device manufactured up to this point.

A p-type electrode 21 is formed on the p-type GaN contact layer 19, and an n-type electrode 22 is formed on the exposed surface of the n-type GaN buffer layer 13. FIG. 2E is a cross-sectional view of the gallium nitride-based semiconductor light emitting device manufactured up to this point.

Here, clean Mg-doped Al _0.1 Ga _0.9
A p-type GaN contact layer 19 on the N-cladding layer surface 18
Is increased, the resistance at this interface is increased and p
Type impurity can be prevented from being depleted, so that the series resistance of the element can be reduced, and the driving voltage of the element is as small as 3.6 V.
The life of the device can be extended.

Further, the Mg-doped Al _0.1 Ga _0.9 N cladding layer 16 grown by the MOVPE method has a substrate temperature of 400 ° C. in a nitrogen atmosphere containing no hydrogen (RF power 400 W) during the re-evaporation step (FIG. 1B). , Nitrogen flow 5sc
cm), the semiconductor layer doped with Mg changes to a p-type semiconductor layer. For this reason, a special heat treatment step after growth, for example, a heat treatment step at 800 ° C. for several tens of minutes is not required, so that the step can be simplified.

Further, the manufacturing method of the present invention is characterized in that the Mg-doped I
The stacked structure up to the nN re-evaporation layer 17 is formed by the MOVPE method (growth rate is about 4 μm / h).
Since only the p-type contact layer is formed by the method (the growth rate is about 0.7 μm / h), the manufacturing time for growing a single wafer can be reduced as compared with the method of manufacturing all using the MBE method.

As described above, the metal organic chemical vapor deposition (MOVP)
E), the surface layer of the laminated structure laminated by the re-evaporation layer is constituted by the re-evaporation layer, for example, by the molecular beam epitaxial method (MBE method). , A gallium nitride-based compound semiconductor light emitting device having a high-quality regrowth interface and a regrown layer can be realized. Further, it is possible to provide a gallium nitride-based compound semiconductor light emitting device which does not require a special heat treatment step after growth and can shorten the manufacturing time for growing one wafer even by using the MBE method.

Example 2 FIG. 3 is a sectional view of a gallium nitride-based compound semiconductor laser device manufactured by the method of the present invention. On an n-type GaN substrate 31, an n-type Al _0.05 Ga _0.95 N
Buffer layer 32, n-type GaN layer 33, n-type Al _0.15 Ga
_0.95 N cladding layer 34, three In _0.2 Ga _0.8 N quantum well layers (thickness 30 °) and two In _0.05 Ga _0.95 N barrier layers.
Multi-quantum well active layer 35 having a thickness of 100
A g-doped Al _0.15 Ga _0.95 N cladding layer 36 is laminated. On top of this, clean Mg-doped A
a Mg-doped In _0.1 Ga _0.9 N re-evaporation layer 37 having an opening exposing the l _0.1 Ga _0.9 N cladding layer surface 39;
An n-type Al _0.05 Ga _0.95 N internal current blocking layer 38 is provided as a current blocking structure. Further, the opening is buried and flattened with a p-type Al _0.1 Ga _0.9 N cladding layer 40 formed by the MBE method, and a p-type GaN contact layer 41 is formed thereon.
(The carrier concentration is 1 × 10 ¹⁹ cm ⁻³ ).

A method for manufacturing such a gallium nitride based semiconductor light emitting device of the present invention will be described in detail with reference to FIGS. The metal-organic vapor phase epitaxy (hereinafter, referred to as MOVPE) method is used for manufacturing a gallium nitride-based compound semiconductor light emitting device, and ammonia is used as a substrate and group V material, trimethylgallium, trimethylaluminum is used as group III material,
Trimethylindium, biscyclopentadienyl magnesium (Cp ₂ Mg) as a p-type impurity, monosilane as an n-type impurity, and hydrogen or nitrogen as a carrier gas are used.

In order to perform the first crystal growth, n-type GaN
The substrate 31 is introduced onto a susceptor of the MOVPE apparatus, the temperature of the substrate is raised to about 1200 ° C., the surface of the substrate is exposed to a nitrogen or hydrogen atmosphere, and the surface is cleaned. Next, the substrate temperature of the n-type GaN substrate 31 is decreased to about 1050 ° C., and the n-type GaN substrate 31 is provided with n-type Al _0.05 Ga _0.95
The N buffer layer 32 is grown by about 550 °. Next, the substrate temperature is raised to about 1050 ° C.
Is grown on the n-type GaN layer 33 by n-type Al _0.15
A Ga _0.95 N cladding layer 34 is grown to a thickness of about 0.1 μm. The substrate temperature is lowered to about 800 ° C., and In _0.2 Ga _0.8
Three N quantum well layers (thickness 30 °) and In _0.05 Ga _0.95
A multiple quantum well active layer 35 having two N barrier layers (thickness of 100 °) is grown. Next, Mg-doped Al _0.15 G
a _0.95 N cladding layer 36 is grown to a thickness of about 0.1 μm, and further, the substrate temperature is lowered to about 800 to 850 ° C.
The doped In _0.1 Ga _0.9 N re-evaporation layer 37 is grown by 200 °. Next, the substrate temperature is raised to about 1000 ° C., and n
Type Al _0.05 Ga _0.95 N internal current blocking layer 38 is 0.15 μm
grow about m. FIG. 4A is a cross-sectional view of the gallium nitride-based semiconductor light emitting device manufactured up to this point.

Once the wafer is taken out of the MOVPE apparatus, the n-type Al _0.05 Ga _0.95 N internal current blocking layer 3 is formed using a normal photolithography process and an etching process.
A part of 8 is etched to the surface of the Mg-doped In _0.1 Ga _0.9 N re-evaporation layer 37 to form a stripe-shaped groove.
FIG. 4B is a cross-sectional view of the gallium nitride based semiconductor light emitting device manufactured up to this point.

The In _0.1 exposed by this etching
In order to stack the regrowth layer in the region of the Ga _0.9 N re-evaporation layer and the region of the n-type Al _0.05 Ga _0.95 N internal current blocking layer 38, M
The BE method is used. Nitrogen is used as a group V material, gallium, aluminum, indium is used as a group III material, and magnesium is used as a p-type impurity. For example, the MBE apparatus is an MBE apparatus that includes ECR plasma or RF plasma and supplies nitrogen onto a substrate.

The wafer was introduced into an RF-MBE apparatus, and nitrogen was supplied onto the substrate at an RF power of 350 W and a nitrogen flow rate of 10 sccm for 5 minutes.
The doped In _0.1 Ga _0.9 N reevaporation layer 37 is re-evaporated to expose a clean Mg-doped Al _0.1 Ga _0.9 N cladding layer surface 39. Here, since the underlayer surface is exposed in the MBE apparatus, the clean Mg-doped Al _0.1 Ga _0.9 N clad layer surface 39 can be exposed as the bottom surface of the stripe-shaped groove. Therefore, in the next step, a high-quality regrowth interface and regrowth layer can be realized. FIG. 4 is a cross-sectional view of the gallium nitride-based semiconductor light-emitting device thus far manufactured.
It is shown in (c).

Next, the substrate temperature is raised to about 800 ° C., and the p-type Al _0.1 Ga _0.9 N cladding layer 40 and the p-type GaN contact layer 41 (carrier concentration is 1 ×
10 ¹⁹ cm ⁻³ ) is grown to about 0.5 μm. FIG. 4 is a cross-sectional view of the gallium nitride-based semiconductor light-emitting device thus far manufactured.
(D).

A p-type electrode 42 is formed on the p-type GaN contact layer 41, and an n-type electrode 43 is formed on the n-type GaN substrate 31. FIG. 4E is a cross-sectional view of the gallium nitride based semiconductor light emitting device manufactured up to this point.

Here, clean Mg-doped Al _0.1 Ga _0.9
Since the p-type Al _0.1 Ga _0.9 N cladding layer 40 is regrown on the stripe-shaped grooves formed on the N-cladding layer surface 39, it is possible to prevent the interface from increasing in resistance and depleting p-type impurities. Therefore, the series resistance of the element can be reduced, the driving voltage of the element is as small as 3.6 V, and the life of the element can be extended.

Here, the regrowth temperature of the MBE method is 800 ° C.
The Mg-doped Al _0.15 Ga _0.95 N clad layer 36
Since the p-type Al _0.1 Ga _0.9 N cladding layer 40 and the p-type GaN contact layer 41 can be formed on the n-type Al _0.05 Ga _0.95 N internal current blocking layer 38, the n-type Al _0.05
Regrowth can be performed without changing the shape of the groove formed in the Ga _0.95 N current blocking layer 38, and a stable transverse mode of the device can be obtained.

Further, the Mg-doped Al _0.1 Ga _0.9 N cladding layer 36 grown by the MOVPE method has a substrate temperature of 800 ° C. in a nitrogen atmosphere containing no hydrogen (RF power) during the re-evaporation step (FIG. 4C). 400W, nitrogen flow 5s
Since the heat treatment is performed at ccm), the semiconductor device is changed to a p-type semiconductor. Therefore, a special heat treatment process after growth, for example, a heat treatment process at 800 ° C. for several tens of minutes is not required, so that the process can be simplified.

Further, the manufacturing method of the present invention is characterized in that the Mg-doped I
The stacked structure up to the n _0.1 Ga _0.9 N re-evaporation layer 37 is
It is formed by the PE method (growth rate is about 4 μm / h), and then formed by the MBE method (growth rate is about 0.7 μm / h).
Since only the Al _0.1 Ga _0.9 N clad layer 40 and the p-type GaN contact layer 41 are formed, the manufacturing time for growing one wafer can be reduced.

As described above, the metalorganic vapor phase epitaxy (MOVP)
E), the surface layer of the laminated structure laminated by the re-evaporation layer is constituted by the re-evaporation layer, for example, by the molecular beam epitaxial method (MBE method). , A gallium nitride-based compound semiconductor laser having a high-quality regrowth interface and a regrown layer can be realized. Further, it is possible to provide a gallium nitride-based compound semiconductor laser that does not require a special heat treatment step after growth and can shorten the manufacturing time for growing one wafer even by using the MBE method.

[0043]

According to the present invention, the surface layer of the laminated structure laminated by the metal organic chemical vapor deposition (MOVPE) method is constituted by the reevaporation layer, so that the molecular beam epitaxial method (MBE method) is used. ), The re-evaporation layer is re-evaporated, and then the re-growth layer is successively laminated. As a result, a high-quality re-growth interface and a re-growth layer are obtained, and the series resistance at the interface is reduced. A gallium nitride-based compound semiconductor light emitting device or a gallium nitride-based compound semiconductor laser can be manufactured.

[0044] Furthermore, re-evaporation layer having a high vapor pressure an In _z Ga
_{Since 1-z} N (0 <z ≦ 1) is used, the substrate temperature required for re-evaporation can be at a sufficiently low substrate temperature, so that the under-layer is not adversely affected and the re-evaporation layer is easily removed. Thus, it is possible to expose a clean underlayer surface.

Further, since the p-type doped semiconductor layer in the stacked structure manufactured by the MOCVD method can be modified into a p-type semiconductor layer in the step of evaporating the reevaporation layer, a special heat treatment step after the growth is performed. Is not required, so that the process can be simplified.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view showing a manufacturing process of a gallium nitride based compound semiconductor light emitting device of the present invention.

FIG. 2 is a cross-sectional view showing a manufacturing process of the gallium nitride-based compound semiconductor light emitting device of the present invention.

FIG. 3 is a sectional view of a gallium nitride based compound semiconductor laser device of the present invention.

FIG. 4 is a cross-sectional view showing a step of manufacturing the gallium nitride-based compound semiconductor laser device of the present invention.

FIG. 5 is a cross-sectional view of a conventional gallium nitride-based compound semiconductor light emitting device.

[Explanation of symbols]

_Reference Signs _List 1 substrate 2 n-type Al _0.1 Ga _0.9 N buffer layer 3 n-type GaN buffer layer 4 n-type Al _0.1 Ga _0.9 N cladding layer 5 In _0.32 Ga _0.68 N active layer 6 Mg-doped Al _0.1 Ga _0.9 N cladding layer 7 Mg-doped In _z Ga _1-z n re-evaporation layer 9 p-type GaN contact layer 11 sapphire substrate 12 n-type Al _0.1 Ga _0.9 n buffer layer 13 n-type GaN buffer layer 14 n-type Al _0.1 Ga _0.9 n cladding layer 15 In _0.32 Ga _0.68 n Active layer 16 Mg-doped Al _0.1 Ga _0.9 N cladding layer 17 Mg-doped InN re-evaporation layer 18 Clean Mg-doped Al _0.1 Ga _0.9 N cladding layer surface 19 p-type GaN contact layer 21 p-type electrode 22 n-type electrode 31 n -type GaN substrate 32 n-type Al _0.05 Ga _0.95 n buffer layer 33 n-type GaN buffer layer 34 n-type Al _0.15 Ga _0.85 n click Head layer 35 multiple quantum well active layer 36 Mg doped Al _0.15 Ga _0.85 N cladding layer 37 Mg doped In _0.1 Ga _0.9 N re-evaporation layer 38 n-type Al _0.05 Ga _0.95 N internal current blocking layer 39 clean Mg-doped Al _0.15 Ga _0.85 N cladding layer surface 40 p-type Al _0.1 Ga _0.9 N cladding layer 41 p-type GaN contact layer 42 p-type electrode 43 n-type electrode

Claims (5)

[Claims] 1. A step of forming a laminated structure made of a semiconductor by a metal organic chemical vapor deposition method (MOVPE method), and successively laminating a reevaporation layer on a surface layer of the laminated structure by a MOCVD method. And evaporating the re-evaporation layer in a molecular beam epitaxy (MBE) apparatus. Re-growing the growth layer by MBE on the laminated structure exposed by evaporating the re-evaporation layer. Process and
A method for manufacturing a gallium nitride-based compound semiconductor light emitting device, comprising: 2. The method according to claim 1, further comprising, between the step of forming the reevaporation layer and the step of evaporating the reevaporation layer, a step of processing the surface of the laminated structure by etching or the like. 2. The method for manufacturing a gallium nitride-based compound semiconductor light-emitting device according to item 1. 3. The re-evaporation layer is made of In _z Ga _{1 -zN} (0 <z
3. The method for manufacturing a gallium nitride-based compound semiconductor light-emitting device according to claim 1, wherein ≦ 1). 4. The method for manufacturing a gallium nitride-based compound semiconductor light emitting device according to claim 3, wherein the substrate temperature in the step of evaporating the reevaporation layer is set to 400 ° C. or more and 1100 ° C. or less. 5. The method of claim 1, wherein the metal organic chemical vapor deposition (MOVPE)
Forming a laminated structure made of a semiconductor by the method), including a step of laminating a gallium nitride-based compound semiconductor doped with a p-type impurity, and a heat treatment step of evaporating the reevaporation layer, 5. The method for manufacturing a gallium nitride-based compound semiconductor light emitting device according to claim 4, wherein said gallium nitride-based compound semiconductor is modified into a p-type gallium nitride-based compound semiconductor.