JPH10335108A - Thick film resistor paste - Google Patents
Thick film resistor pasteInfo
- Publication number
- JPH10335108A JPH10335108A JP9147385A JP14738597A JPH10335108A JP H10335108 A JPH10335108 A JP H10335108A JP 9147385 A JP9147385 A JP 9147385A JP 14738597 A JP14738597 A JP 14738597A JP H10335108 A JPH10335108 A JP H10335108A
- Authority
- JP
- Japan
- Prior art keywords
- thick film
- film resistor
- glass frit
- paste
- cao
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Non-Adjustable Resistors (AREA)
Abstract
Description
【０００１】[0001]
【産業上の分野】この発明は、厚膜抵抗ペーストに関わ
り、特にファクシミリやバーコードプリンタ用等の厚膜
型サーマルヘッドの発熱抵抗体を形成するに好適な厚膜
抵抗ペーストに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thick film resistor paste, and more particularly to a thick film resistor paste suitable for forming a heating resistor of a thick film type thermal head for a facsimile or a bar code printer.
【０００２】[0002]
【従来の技術】厚膜抵抗ペーストは、酸化ルテニウムや
パイロクロール型ルテニウム複合酸化物等のルテニウム
化合物の粉末と、その結合剤としてのガラスフリット、
および必要に応じて種々の無機添加物とからなる無機混
合粉末を有機ビヒクルに分散させて作成される。この種
の厚膜抵抗ペーストは、アルミナやグレーズ基板等のセ
ラミック基板上に印刷され、乾燥、焼成工程を経て厚膜
抵抗体として形成される。2. Description of the Related Art A thick film resistor paste is composed of a ruthenium compound powder such as ruthenium oxide or pyrochlore-type ruthenium composite oxide, and a glass frit as a binder.
It is prepared by dispersing an inorganic mixed powder comprising various inorganic additives, if necessary, in an organic vehicle. This kind of thick film resistor paste is printed on a ceramic substrate such as an alumina or glaze substrate, and is formed as a thick film resistor through a drying and firing process.
【０００３】従来、厚膜型サーマルヘッドの発熱抵抗体
形成用厚膜抵抗ペーストとしては、耐熱性重視の観点か
ら、アルミナやジルコニア等の高耐熱性酸化物を添加す
ると共に、ガラスフリットとしてもＬａ2Ｏ3−Ｂ2Ｏ3−
ＳｉＯ2−ＣａＯ−ＺｎＯ系のガラスを用いた厚膜抵抗
ペーストが使用されてきた。Conventionally, as a thick film resistor paste for forming a heating resistor of a thick film type thermal head, a high heat resistant oxide such as alumina or zirconia is added from the viewpoint of emphasizing heat resistance, and La frit is also used as a glass frit. 2 O 3 -B 2 O 3-
A thick film resistor paste using SiO 2 —CaO—ZnO-based glass has been used.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、上記の
例の抵抗ペーストを、印字の高密度化、高速化を図るた
め、高い印加電力で使用されるバーコードプリンタ用途
の抵抗ペーストとして用いた場合、電力印加による抵抗
値変化が大きくなるという問題が生じた。そこでこの発
明は、上記の問題点を解決し、従来品以上の耐電力特性
を有する発熱抵抗体を形成できる厚膜抵抗ペーストを提
供することを目的とする。However, when the resistance paste of the above example is used as a resistance paste for a bar code printer used at a high applied power in order to increase the density and speed of printing, There has been a problem that a change in resistance value due to application of electric power is large. Therefore, an object of the present invention is to solve the above-mentioned problems and to provide a thick-film resistor paste capable of forming a heating resistor having power withstanding characteristics higher than conventional products.
【０００５】[0005]
【課題を解決するための手段】この発明の目的は、酸化
ルテニウム粉末とガラスフリットとを主たる成分とする
無機混合粉末を有機ビヒクルに分散させて成る厚膜抵抗
ペーストにおいて、ガラスフリットとして、重量比率で
ＳｉＯ2を５０〜６０％、ＰｂＯを１５〜２０％、Ａｌ2
Ｏ3を７〜１０％、ＣａＯを５〜１０％、Ｂ2Ｏ3を２〜
７％、ＢａＯを２〜７％、及びＭｇＯを１〜５％の組成
を有するものを用いたことを特徴とする厚膜抵抗ペース
トによって達成される。SUMMARY OF THE INVENTION It is an object of the present invention to provide a thick film resistor paste in which an inorganic mixed powder mainly composed of ruthenium oxide powder and glass frit is dispersed in an organic vehicle. in the SiO 2 50~60%, 15~20% of PbO, Al 2
O 3 7-10% 5-10% of CaO, a B 2 O 3. 2 to
This is achieved by a thick film resistor paste characterized by using a composition having a composition of 7%, BaO of 2 to 7%, and MgO of 1 to 5%.
【０００６】[0006]
【発明の実施の形態】この発明による厚膜抵抗ペースト
を製造するに当たり、ルテニウム化合物としては、酸化
ルテニウムを用いることが望ましく、ルテニウム化合物
粉末及びガラスフリットの粒径は、１μｍ以下であるこ
とが望ましい。又、ガラスとしては、ボールミルで充分
微粉砕したものを用いる事ができる。DESCRIPTION OF THE PREFERRED EMBODIMENTS In producing a thick film resistor paste according to the present invention, it is desirable to use ruthenium oxide as a ruthenium compound, and it is desirable that the particle size of a ruthenium compound powder and a glass frit be 1 μm or less. . Further, as the glass, a glass sufficiently pulverized by a ball mill can be used.
【０００７】ガラスフリットとして用いるガラス成分を
この発明の様に限定した理由は次の通りである。即ち、
ＰｂＯは、１５重量％未満では軟化点が上がり過ぎてし
まい、２０重量％を越えると耐熱性が低下する。Ｓｉ2
Ｏ3は、ガラスのネットワークフォーマーとして機能す
るが、５０重量％未満では耐熱性が低下し、６０重量％
を越えて配合すると軟化点が上昇し過ぎてしまう。Ａｌ
2Ｏ3、ＣａＯ、Ｂ2Ｏ3、ＢａＯ、ＭｇＯはいずれも失透
傾向を低下させ、耐熱性を向上させる働きがあり、上述
の配合量の下限値未満ではこの効果が出にくく、上限値
を超えて配合すると軟化点が上がってしまう。又、有機
ビヒクルとしては、エチルセルロースを有機溶剤に溶解
したものを用いることが良好な印刷特性を得る上から求
められる。有機溶剤は、エチルセルロース等の樹脂を溶
解出来るものであれば良く、カルビトールアセテート、
パインオイル、ターピネオール等が好ましく用いられ
る。溶剤の配合量は、抵抗ペーストの印刷特性にあわせ
て増減すれば良い。The reason why the glass component used as the glass frit is limited as in the present invention is as follows. That is,
If PbO is less than 15% by weight, the softening point will be too high, and if it exceeds 20% by weight, the heat resistance will be reduced. Si 2
O 3 functions as a glass network former, but if it is less than 50% by weight, heat resistance is reduced, and 60% by weight
If the amount exceeds the above range, the softening point will be too high. Al
2 O 3 , CaO, B 2 O 3 , BaO, and MgO all have a function of lowering the tendency to devitrification and improving heat resistance. If the amount exceeds the above range, the softening point will increase. Further, as the organic vehicle, a solution in which ethyl cellulose is dissolved in an organic solvent is required from the viewpoint of obtaining good printing characteristics. The organic solvent may be any as long as it can dissolve resins such as ethyl cellulose, and carbitol acetate,
Pine oil, terpineol and the like are preferably used. The amount of the solvent may be increased or decreased according to the printing characteristics of the resistance paste.
【０００８】[0008]
【実施例】ガラスフリットとしては、重量比率で、Ｓｉ
Ｏ2を５５％、ＰｂＯを１７％、Ａｌ2Ｏ3を８．５％、
ＣａＯを７．５％、Ｂ2Ｏ3を５．０％、ＢａＯを４．５
％、及びＭｇＯを２．５％と成るように原料成分を混合
し、１３００℃で溶解し、冷却後ボールミルを用いて平
均粒径２μｍ以下に粉砕したものを用いた。こうして得
られたガラスフリット６１重量部を導電成分である平均
粒径０．８μｍの二酸化ルテニウム粉末２２重量部及び
高耐熱性酸化物としての平均粒径１μｍ以下の酸化ジル
コニウム粉末１７重量部と共に、有機ビヒクル中に分散
させて三本ロールミルを用いて混練してペースト化し
た。ここで、有機ビヒクルとしては、エチルセルロース
をターピネオールに溶解した物を用いた。ここで得た厚
膜抵抗ペーストを２５０メッシュ、エマルジョン厚２０
μｍのステンレススクリーンを用いて、あらかじめ金電
極を形成したグレーズ基板（日本特殊陶業社製、品番Ｇ
Ｓ３１）上に印刷し、オーブンで１２０℃１０分間乾燥
後、コンベア式電気炉に入れて８００℃で焼成（ピーク
時間１０分、入り口〜出口１時間）し、長さ２００μ
ｍ、幅６２．５μｍの抵抗体素子が複数並んだ抵抗アレ
イを形成し、以下の評価を行った。先ず、焼成膜厚を測
定すると、６μｍ、素子１個当たりの抵抗値（ドット抵
抗値）を測定すると９０６Ωであった。その後ステップ
ストレステスト（ＳｔｅｐＳｔｒｅｓｓ Ｔｅｓｔ）を
行った。この評価に当たっては、印加電力１ワットから
スタートし、０．５ワットずつ上げていき、抵抗値が一
旦マイナスヘシフトした後、再び上昇しプラスに転じた
時の抵抗値変化率（最大ドリフト）及び更に電力印加を
続けていき抵抗値がプラス１％に変化した時のワッテー
ジ（破壊点）を測定すると、それぞれ、−１７．５％、
１．６５ワットであった。EXAMPLE As a glass frit, Si was used in a weight ratio.
O 2 to 55% PbO 17%, the Al 2 O 3 8.5%
7.5% of CaO, 5.0% of B 2 O 3 and 4.5 of BaO
% And MgO were mixed at 2.5%, and melted at 1300 ° C., cooled, and ground using a ball mill to an average particle size of 2 μm or less. 61 parts by weight of the glass frit thus obtained were combined with 22 parts by weight of ruthenium dioxide powder having an average particle diameter of 0.8 μm as a conductive component and 17 parts by weight of zirconium oxide powder having an average particle diameter of 1 μm or less as a highly heat-resistant oxide. The mixture was dispersed in a vehicle and kneaded using a three-roll mill to form a paste. Here, as the organic vehicle, a product obtained by dissolving ethyl cellulose in terpineol was used. The thick film resistor paste obtained here is 250 mesh, emulsion thickness 20
A glaze substrate (made by Nippon Tokuhoku Co., Ltd., product number G
S31) Print on it, dry it in an oven at 120 ° C for 10 minutes, put it in a conveyor-type electric furnace, and bake it at 800 ° C (peak time 10 minutes, entrance to exit 1 hour), length 200μ
A resistor array in which a plurality of resistor elements having a width of m and a width of 62.5 μm was formed was evaluated as follows. First, when the fired film thickness was measured, it was 6 μm, and when the resistance value (dot resistance value) per element was measured, it was 906Ω. After that, a step stress test was performed. In this evaluation, the applied power was started from 1 watt and increased by 0.5 watts. The resistance value once shifted to minus, then increased again and turned to plus, and the resistance change rate (maximum drift) and further When the wattage (break point) when the resistance value was changed to plus 1% while the power application was continued was measured, they were -17.5%,
1.65 watts.
【０００９】[0009]
【比較例】ガラスフリットとして、Ｌａ2Ｏ3を４０％、
Ｂ2Ｏ3を３０％残部をＳｉＯ2−ＣａＯ−ＺｎＯ系から
なるものを用い、実施例と同様にして抵抗ペーストを得
て、評価してみると、ドット抵抗値は９２０Ω、ワッテ
ージは１．３５ワット、最大ドリフトは−２０．５％、
膜厚は６μｍであった。これらの結果と実施例の結果と
をまとめると表１の様になる。[Comparative Example] La 2 O 3 was 40% as a glass frit,
A resist paste was obtained and evaluated in the same manner as in the example, using a 30% balance of B 2 O 3 consisting of SiO 2 —CaO—ZnO. The dot resistance was 920 Ω and the wattage was 1. 35 watts, maximum drift -20.5%,
The thickness was 6 μm. Table 1 summarizes these results and the results of the examples.
【００１０】[0010]
【表１】 [Table 1]
【００１１】この表からわかる通り、この発明によれ
ば、ワッテージは約２２％、最大ドリフトは約１５％向
上した。As can be seen from the table, according to the present invention, the wattage is improved by about 22%, and the maximum drift is improved by about 15%.
【００１２】[0012]
【発明の効果】以上述べた通り、この発明の厚膜抵抗ペ
ーストは、ガラスフリットの組成を特定化することによ
り、絶縁基板上へ印刷して耐電力性に優れた発熱抵抗体
を形成することが可能となり、高速かつ高密度印字可能
なサーマルヘッドの作成に有益な材料を提供するもので
ある。As described above, the thick film resistor paste of the present invention can be printed on an insulating substrate by forming a glass frit composition to form a heating resistor excellent in power durability. The present invention provides a material useful for producing a thermal head capable of high-speed and high-density printing.
Claims (1)
を主たる成分とする無機混合粉末を有機ビヒクルに分散
させて成る厚膜抵抗ペーストにおいて、ガラスフリット
として、重量比率でＳｉＯ2を５０〜６０％、ＰｂＯを
１５〜２０％、Ａｌ2Ｏ3を７〜１０％、ＣａＯを５〜１
０％、Ｂ2Ｏ3を２〜７％、ＢａＯを２〜７％、及びＭｇ
Ｏを１〜５％の組成を有するものを用いたことを特徴と
する厚膜抵抗ペースト。1. A thick film resistor paste obtained by dispersing an inorganic mixed powder containing ruthenium oxide powder and glass frit as main components in an organic vehicle, wherein 50 to 60% by weight of SiO 2 is used as a glass frit, and PbO is used as a glass frit. 15-20% of Al 2 O 3 7 to 10 percent, CaO 5 to 1
0% B 2 O 3 2-7% 2-7% The BaO, and Mg
A thick-film resistance paste using O having a composition of 1 to 5%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14738597A JP3755847B2 (en) | 1997-06-05 | 1997-06-05 | Thick film resistor paste |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14738597A JP3755847B2 (en) | 1997-06-05 | 1997-06-05 | Thick film resistor paste |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH10335108A true JPH10335108A (en) | 1998-12-18 |
| JP3755847B2 JP3755847B2 (en) | 2006-03-15 |
Family
ID=15429068
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14738597A Expired - Lifetime JP3755847B2 (en) | 1997-06-05 | 1997-06-05 | Thick film resistor paste |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3755847B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2002045465A1 (en) * | 2000-12-01 | 2002-06-06 | Ibiden Co., Ltd. | Ceramic heater, and ceramic heater resistor paste |
| JP2013161770A (en) * | 2012-02-09 | 2013-08-19 | Kyoto Elex Kk | Resistor paste for ceramic substrate heater and ceramic substrate heater |
-
1997
- 1997-06-05 JP JP14738597A patent/JP3755847B2/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2002045465A1 (en) * | 2000-12-01 | 2002-06-06 | Ibiden Co., Ltd. | Ceramic heater, and ceramic heater resistor paste |
| JP2013161770A (en) * | 2012-02-09 | 2013-08-19 | Kyoto Elex Kk | Resistor paste for ceramic substrate heater and ceramic substrate heater |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3755847B2 (en) | 2006-03-15 |
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