JPH10332780A - Semiconductor measuring apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor measuring apparatus capable of performing a long time continuous measurement with high reliability. SOLUTION: A semiconductor measuring apparatus comprises a base body 101 capable of performing 3-axis movement, a conductive probe 102 with a proper elasticity and rigidity, a terminal 103 for electrical connection between the probe 102 and measuring apparatus 110, a heater 104 for overheating the probe 102, a terminal 105 for connecting the heater to a power supply 107 through a power control part 108, a thermo sensor 106 for detecting the temperature of the probe 102, and an A/D converter 109 for converting analog output signals to digital output signals of the thermo sensor 106. Also the power control part 108, A/D converter 109, and measuring apparatus 110 are connected to an electronic control device 11. Then the top end of the probe 102 is brought in contact with the measuring pad 122 of a semiconductor device 121 to be measured, and its electrical characteristics are measured.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor measuring device and, more particularly, to a structure of a manipulator used for measuring characteristics of a semiconductor device at a high temperature.

[0002]

2. Description of the Related Art Conventionally, techniques in such a field include:
For example, there are the following. FIG. 5 is a schematic configuration diagram of a conventional manipulator used for measuring characteristics of a semiconductor device.

In FIG. 1, a manipulator used for measuring characteristics of a semiconductor device has a base 501 capable of operating in three axes (X axis: left and right direction on paper, Y axis: front and rear direction on paper, Z axis: vertical direction on paper). , A conductive probe 502 having appropriate elasticity and rigidity, and a terminal 503 for electrical connection between the probe 502 and a measuring device (not shown).

[0004] Although not shown, the tip of the probe 502 is brought into contact with a measuring pad of a semiconductor device to be measured to measure its electrical characteristics.

[0005]

However, in the above-described manipulator, the probe 502 needs to have elasticity and conductivity, and is made of metal. Therefore, when measuring the characteristics of the semiconductor element under a high temperature, the probe 502 thermally expands, and when trying to measure the characteristic fluctuation for a long time, the tip of the probe 502 comes off from the measuring pad of the semiconductor element to be measured. Therefore, an operation of re-contacting the probe 502 during the measurement is required. For this purpose, it is necessary to temporarily turn off the applied voltage, and it is necessary to continuously apply the voltage for reliability evaluation and the like. It was an obstacle to measurement.

SUMMARY OF THE INVENTION It is an object of the present invention to provide a semiconductor measuring apparatus which eliminates the above-described problem of the thermal expansion of the conventional probe and can perform continuous measurement over a long period of time with high reliability.

[0007]

In order to achieve the above object, the present invention provides: (1) a semiconductor measuring device, a base capable of three-axis operation, a conductive probe attached to the base, A measuring instrument connected to the conductive probe and a temperature adjusting mechanism for the conductive probe are provided.

[2] In the semiconductor measuring device, a base capable of three-axis operation, a conductive probe attached to the base, a measuring instrument connected to the conductive probe, and a conductive probe A heater for overheating, a power supply connected to the heater, and a temperature sensor for detecting the temperature of the conductive probe are provided.

[3] In the semiconductor measuring device, a base capable of three-axis operation, a conductive probe attached to the base, a measuring instrument connected to the conductive probe, and a conductive probe A tube provided so as to cover and means for introducing a cooling gas to the tube are provided. [4] In the semiconductor measuring device, a base capable of three-axis operation, a conductive probe attached to the base, a measuring instrument connected to the conductive probe, and a cover for covering the conductive probe. A tube which is provided and has an opening at the tip upward is provided, and means for introducing a cooling gas to the tube are provided.

[5] In the semiconductor measuring device, a base capable of three-axis operation, a conductive probe attached to the base, a measuring instrument connected to the conductive probe, and a conductive probe A conductive tube which is provided so as to cover and is kept at an equal distance from the conductive probe by an insulating support, and means for introducing a cooling gas into the tube are provided.

[0011]

Embodiments of the present invention will be described below in detail with reference to the drawings. FIG. 1 is a configuration diagram of a semiconductor measuring device according to a first embodiment of the present invention.

The semiconductor measuring device of this embodiment has three axes (X
(Axis: left-right direction of paper surface, Y axis: front-back direction of paper surface, Z-axis: vertical direction of paper surface) Operable base 101, conductive probe 102 having appropriate elasticity and rigidity, and measurement with probe 102 A terminal 103 for electrical connection to a device 110; a heater 104 for overheating the probe 102; a terminal 105 for connecting the heater 104 to a power supply 107 via a power control unit 108; Temperature sensor 106 for detecting temperature
And an A / D converter 109 for converting an analog output signal of the temperature sensor 106 into a digital signal. The power control unit 108, the A / D converter 109, and the measuring device 110 are connected to the electronic control device 111, respectively. Have been.

Then, the tip of the probe 102 is brought into contact with the measuring pad 122 of the semiconductor device 121 to be measured,
Measure its electrical properties. As described above, according to the first embodiment, the heater 10 for overheating the probe 102 is used.
In order to measure the characteristic variation of the semiconductor device 121 under high temperature under high temperature, the probe 102 is preheated by the heater 104 to the same temperature as the semiconductor device 121 under measurement. An analog signal is extracted using a sensor 106, for example, a thermocouple or the like, and A /
By taking it into the electronic control unit 111 via the D converter 109 and making it controllable, the thermal expansion of the probe 102 during the characteristic measurement is eliminated, and the temperature characteristic can be measured stably for a long time. Becomes

Next, a second embodiment of the present invention will be described. FIG. 2 is a configuration diagram of a semiconductor measuring apparatus according to a second embodiment of the present invention. It should be noted that the same measuring instruments and semiconductor devices to be measured as those in the first embodiment are omitted. The semiconductor measuring device of this embodiment has three axes (X axis: left-right direction on the paper surface, Y axis:
(The front-back direction of the paper surface, Z-axis: the vertical direction of the paper surface) A base 201 capable of operation, a conductive probe 202 having appropriate elasticity and rigidity, and a terminal for electrical connection between the probe 202 and a measuring device 203, a flexible tube 204 provided to cover the probe 202,
And a gas inlet 205 to the tube 204.

As described above, according to the second embodiment, since the cooling gas is introduced from the gas inlet 205 of the tube 204 covering the probe 202, the characteristics of the semiconductor device as the device to be measured at a high temperature are obtained. When measuring the fluctuation, the thermal expansion of the probe 202 during the characteristic measurement is eliminated, and the temperature characteristic can be stably measured for a long time. Also, according to the second embodiment, the cooling gas is introduced into the flexible tube 204, so that the probe 20
2. The fine adjustment of the contact pressure of the semiconductor device to be measured on the measuring pad is possible, when the size of the measuring pad is small, when it is formed of a soft metal such as Au, or when the metal film is thin. The measurement can be performed without damaging the measurement pad.

Next, a third embodiment of the present invention will be described. FIG. 3 is a configuration diagram of a semiconductor measuring apparatus according to a third embodiment of the present invention. It should be noted that illustrations of the same measuring instruments and semiconductor devices to be measured as in the first embodiment are omitted. The semiconductor measuring device of this embodiment has three axes (X-axis: left-right direction on paper,
(Y-axis: front-back direction of paper surface, Z-axis: up-down direction of paper surface) Base 301 capable of operation, conductive probe 302 having appropriate elasticity and rigidity, and electrical connection between probe 302 and measuring equipment Terminal 303 for connecting the probe 30
2, a tube 304 provided to cover the top 2 and having an opening 306 upward at the tip.
And a gas inlet 305 to the gas inlet.

As described above, according to the third embodiment, since the cooling gas is introduced from the gas inlet 305 of the tube 304 covering the probe 302, the characteristic fluctuation of the semiconductor device under measurement at a high temperature is measured. In this case, the thermal expansion of the probe 302 during the characteristic measurement is eliminated, and the temperature characteristic can be stably measured for a long time. According to the third embodiment, the cooling gas introduced into the tube 304 is discharged from the opening 306 facing upward.
The temperature of the semiconductor element to be measured can be prevented from lowering due to the cooling gas, and the temperature characteristics can be measured with higher accuracy than in the second embodiment.

Next, a fourth embodiment of the present invention will be described. FIG. 4 is a configuration diagram of a semiconductor measuring apparatus showing a fourth embodiment of the present invention, FIG. 4 (a) is an overall configuration diagram of the semiconductor measuring apparatus, and FIG. It is A 'line sectional drawing. It should be noted that illustrations of the same measuring instruments and semiconductor devices to be measured as in the first embodiment are omitted.

The semiconductor measuring device of this embodiment has three axes (X
(Axis: left-right direction on paper surface, Y axis: front-back direction on paper surface, Z-axis: up-down direction on paper surface) Operable base 401, conductive probe 402 having appropriate elasticity and rigidity, and measurement with probe 402 Terminal 403 for electrical connection with equipment
And provided so as to cover the probe 402, and
It comprises a conductive tube 404 which is kept at the same distance from the probe 402 by an insulating support 406, and a gas inlet 405 for the tube 404.

As described above, according to the fourth embodiment, since the cooling gas is introduced from the gas inlet 405 of the tube 404 covering the probe 402, the characteristics of the semiconductor device as the device to be measured at a high temperature are obtained. When measuring the fluctuation, the thermal expansion of the probe 402 during the characteristic measurement is eliminated, and the temperature characteristic can be stably measured for a long time. According to the fourth embodiment, the tube 404 for introducing the cooling gas is made of a conductive material, and the insulating support 406 keeps the same distance from the probe 402.
High frequency measurement is possible by equivalently having a coaxial structure and matching the characteristic impedance with the measurement system.

It should be noted that the present invention is not limited to the above embodiment, and various modifications are possible based on the spirit of the present invention, and these are not excluded from the scope of the present invention.

[0022]

As described above, according to the present invention, the following effects can be obtained. (A) Since a heater for heating the probe is provided, when measuring the characteristic fluctuation of the semiconductor element at a high temperature, the probe is heated in advance to the same temperature as the semiconductor element as the element to be measured. By doing so, the thermal expansion of the probe during the characteristic measurement is eliminated, and the temperature characteristic can be measured stably for a long time.

(B) Since the cooling gas is introduced into the tube covering the probe from the gas inlet, the thermal expansion of the probe during the characteristic measurement when measuring the characteristic fluctuation at a high temperature of the semiconductor element. And the temperature characteristic can be stably measured over a long period of time. Further, since the cooling gas is introduced into the flexible tube, it is possible to finely adjust the contact pressure of the probe to the measurement pad of the semiconductor element to be measured, and when the dimensions of the measurement pad are small, When a soft metal such as Au is used, or when the metal film is thin, the measurement can be performed without damaging the measurement pad.

(C) Since the cooling gas is introduced into the tube covering the probe from the gas introduction port, the thermal expansion of the probe during the characteristic measurement when measuring the characteristic fluctuation at a high temperature of the semiconductor element is measured. And the temperature characteristic can be stably measured over a long period of time. In addition, since the cooling gas introduced into the tube is released from the upward opening, the temperature of the semiconductor device to be measured can be prevented from lowering due to the cooling gas, and highly accurate temperature characteristics can be measured. Becomes

(D) Since the cooling gas is introduced into the tube covering the probe from the gas introduction port, the thermal expansion of the probe during the characteristic measurement when measuring the characteristic fluctuation at a high temperature of the semiconductor element is measured. And the temperature characteristic can be stably measured over a long period of time. In addition, since the tube for introducing the cooling gas is made of a conductive material and is kept at the same distance from the probe by the insulating support, it becomes an equivalent coaxial structure, and by matching the characteristic impedance with the measurement system, High frequency measurement becomes possible.

[Brief description of the drawings]

FIG. 1 is a configuration diagram of a semiconductor measuring device according to a first embodiment of the present invention.

FIG. 2 is a configuration diagram of a semiconductor measuring apparatus according to a second embodiment of the present invention.

FIG. 3 is a configuration diagram of a semiconductor measuring apparatus according to a third embodiment of the present invention.

FIG. 4 is a configuration diagram of a semiconductor measuring device showing a fourth embodiment of the present invention.

FIG. 5 is a schematic configuration diagram of a conventional manipulator used for measuring characteristics of a semiconductor element.

[Explanation of symbols]

101, 201, 301, 401 Base capable of three-axis operation 102, 202, 302, 402 Conductive probe 103, 105, 203, 303, 403 with appropriate elasticity and rigidity Terminal 104 Heater 106 Temperature sensor 107 Power supply 108 Power supply control unit 109 A / D converter 110 Measuring device 111 Electronic control unit 121 Semiconductor device to be measured 122 Measurement pad 204 Flexible tube 205, 305, 405 Gas inlet 304 Tube 306 Opening 404 Equivalent distance to probe Keep conductive tube 406 Insulating support

Claims (5)

[Claims] (A) a base capable of three-axis operation; (b) a conductive probe attached to the base; (c) a measuring instrument connected to the conductive probe; and (d). A semiconductor measuring device comprising: a temperature control mechanism for the conductive probe. (A) a base capable of three-axis operation; (b) a conductive probe attached to the base; (c) a measuring device connected to the conductive probe; and (d). A heater for heating the conductive probe, (e) a power supply connected to the heater, and (f) a temperature sensor for detecting a temperature of the conductive probe. Semiconductor measuring device. (A) a base capable of three-axis operation; (b) a conductive probe attached to the base; (c) a measuring device connected to the conductive probe; and (d). A tube provided to cover the conductive probe,
(E) a semiconductor measuring apparatus comprising: means for introducing a cooling gas into the tube. (A) a base capable of three-axis operation; (b) a conductive probe attached to the base; (c) a measuring instrument connected to the conductive probe; and (d). A semiconductor measuring device, comprising: a tube provided to cover the conductive probe and having an opening at the tip upward, and (e) means for introducing a cooling gas to the tube. (A) a base capable of three-axis operation; (b) a conductive probe attached to the base; (c) a measuring device connected to the conductive probe; and (d). A conductive tube provided so as to cover the conductive probe and kept at the same distance from the conductive probe by an insulating support; and (e) means for introducing a cooling gas into the tube. A semiconductor measuring device, comprising: