JPH10326805A - Flip chip connection method and flip chip mounting device - Google Patents
Flip chip connection method and flip chip mounting deviceInfo
- Publication number
- JPH10326805A JPH10326805A JP9134756A JP13475697A JPH10326805A JP H10326805 A JPH10326805 A JP H10326805A JP 9134756 A JP9134756 A JP 9134756A JP 13475697 A JP13475697 A JP 13475697A JP H10326805 A JPH10326805 A JP H10326805A
- Authority
- JP
- Japan
- Prior art keywords
- heating tool
- temperature
- bare chip
- solder
- solder portion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/7525—Means for applying energy, e.g. heating means
- H01L2224/75252—Means for applying energy, e.g. heating means in the upper part of the bonding apparatus, e.g. in the bonding head
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/757—Means for aligning
- H01L2224/75743—Suction holding means
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/341—Surface mounted components
- H05K3/3431—Leadless components
- H05K3/3436—Leadless components having an array of bottom contacts, e.g. pad grid array or ball grid array components
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/3494—Heating methods for reflowing of solder
Landscapes
- Wire Bonding (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明はフリップチップ接続
方法に関するものであり、特にベアチップを加熱ツール
で吸着及び加熱し、フェイスダウン方式で回路基板上の
パッドと接触させはんだを溶融し接合するフリップチッ
プ接続方法、およびフリップチップ接続装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a flip chip connection method, and more particularly to a flip chip in which a bare chip is sucked and heated by a heating tool, and is brought into contact with a pad on a circuit board in a face-down manner to melt and join the solder. The present invention relates to a connection method and a flip chip connection device.
【0002】[0002]
【従来の技術】従来のフリップチップ実装方法を図6及
び図7の断面図により工程順にそのフローを示す。即
ち、図6(A)に於いて、あらかじめバンプ2を形成し
たベアチップ3を収納トレー14からピックアップヘッ
ド13で取り出し、次いで図6(B)に於いて、ピック
アップヘッド13を180度回転させてからはんだの融
点以上に常時加熱させた加熱ツール4、あるいはパルス
電流により瞬時に加熱させる加熱ツール4にフェースダ
ウンで受け渡す。2. Description of the Related Art The flow of a conventional flip chip mounting method is shown in the order of steps with reference to the sectional views of FIGS. That is, in FIG. 6A, the bare chip 3 on which the bumps 2 are formed in advance is taken out from the storage tray 14 by the pickup head 13, and then, in FIG. 6B, the pickup head 13 is rotated by 180 degrees. It is delivered face down to a heating tool 4 that is constantly heated to a temperature equal to or higher than the melting point of the solder or a heating tool 4 that is heated instantaneously by a pulse current.
【0003】次に、図6(C)及び図6(D)に於い
て、回路基板5の姿勢認識とベアチップ3の姿勢認識を
カメラ15および照明16と公知の画像処理装置を使用
して実行した後、それぞれの位置補正を実施しベアチッ
プ3上のバンプ2と回路基板5上のパッド6が対応して
接触するように位置決めをする。その後図7(E)に於
いて、加熱ツール4を下降させ、図7(F)に於いて回
路基板5上のパッド6に施されたはんだ部7とベアチッ
プ3上のバンプ2とを接触させながら加熱することによ
り、はんだ部7を溶融させバンプ2へのぬれを生じさせ
る。Next, referring to FIGS. 6C and 6D, the recognition of the posture of the circuit board 5 and the recognition of the posture of the bare chip 3 are performed using the camera 15 and the illumination 16 and a known image processing device. After that, the respective positions are corrected, and positioning is performed so that the bumps 2 on the bare chip 3 and the pads 6 on the circuit board 5 are in contact with each other. Thereafter, as shown in FIG. 7 (E), the heating tool 4 is lowered to bring the solder portion 7 provided on the pad 6 on the circuit board 5 into contact with the bump 2 on the bare chip 3 as shown in FIG. 7 (F). While heating, the solder portion 7 is melted and the bump 2 is wetted.
【0004】最後に図7(G)に於いて、はんだ部7の
ぬれが完了した時点でベアチップ3を保持していた真空
吸着を開放し、同時に加熱ツール4を上昇させ接合を終
了する。このようなフリップチップ実装方法において、
接合が完了するまでベアチップを加熱ツールが吸着保持
しているため、はんだ部の表面張力によるセルフアライ
メント効果が得られず、かなり高精度なフリップチップ
搭載機が必要となる。[0007] Finally, in FIG. 7 (G), when the wetting of the solder portion 7 is completed, the vacuum suction holding the bare chip 3 is released, and at the same time, the heating tool 4 is raised to complete the joining. In such a flip chip mounting method,
Since the heating tool holds the bare chip by suction until the joining is completed, the self-alignment effect due to the surface tension of the solder portion cannot be obtained, and a highly accurate flip chip mounting machine is required.
【0005】このような従来の問題を解決するために、
例えば特開昭64−50538号公報等に示されるよう
に、ベアチップと回路基板の双方の電極が接触する前
に、どちらか一方あるいは双方に施されたはんだ部の被
膜をあらかじめ加熱溶融させることにより、破壊させて
おき、その後、表面張力によるセルフアライメント効果
を利用してフリップチップ実装方法が提案されている。In order to solve such a conventional problem,
For example, as disclosed in JP-A-64-50538, by heating and melting the coating of the solder portion applied to one or both of the electrodes before the electrodes of the bare chip and the electrodes of the circuit board come into contact with each other. After that, a flip-chip mounting method using the self-alignment effect by surface tension has been proposed.
【0006】[0006]
【発明が解決しようとする課題】然しながら、かかる従
来の方法にあっては、ベアチップと回路基板の双方の電
極が接触する前にあらかじめはんだ部を溶融させ、その
表面張力によりセルフアライメント効果を得るものであ
るから、長時間に亘り、はんだ部を溶融状態にするた
め、低酸素濃度中での接合やフラックスの使用等による
はんだ部の酸化防止対策が必要であった。However, in such a conventional method, the solder portion is melted in advance before the electrodes of both the bare chip and the circuit board come into contact with each other, and a self-alignment effect is obtained by the surface tension. Therefore, in order to keep the solder portion in a molten state for a long time, it is necessary to prevent the solder portion from being oxidized by bonding in a low oxygen concentration or using a flux.
【0007】さらに回路基板のパッド上にはんだ部を供
給する形態においては、樹脂系のプリント配線板等の耐
熱性が比較的低い回路基板では、熱膨張による寸法精度
劣化や応力による接合部の破壊等の問題があった。本発
明の目的は、上記した従来技術の欠点を改良し、容易に
セルフアライメント効果が得られるフェイスダウン方式
に於けるフリップチップ接続方法及びその接続装置を提
供するとともに、従来の製造方法で問題となっていたは
んだ部の酸化や回路基板の熱膨張の問題を解決する手段
を提供するものである。Further, in a mode in which a solder portion is supplied onto a pad of a circuit board, in a circuit board having a relatively low heat resistance such as a resin-based printed wiring board, dimensional accuracy is deteriorated due to thermal expansion and a joint is broken due to stress. And so on. An object of the present invention is to provide a flip-chip connection method and a connection device thereof in a face-down system in which the above-described disadvantages of the prior art are improved and a self-alignment effect can be easily obtained. An object of the present invention is to provide a means for solving the problems of oxidation of the solder portion and thermal expansion of the circuit board.
【0008】[0008]
【課題を解決するための手段】本発明は上記した目的を
達成する為、以下に示す様な基本的な技術構成を採用す
るものである。即ち、本発明に係る第1の態様として
は、ベアチップを加熱ツールで吸着及び加熱し、フェイ
スダウン方式で当該ベアチップのバンプ部を回路基板上
のパッドを構成するはんだ部と接続させ、当該はんだ部
を溶融して両者を接合するフリップチップ実装方法にお
いて、当該ベアチップのバンプ部が、該回路基板上のは
んだ部と接触する以前は、当該はんだ部は溶融する事が
なく、当該ベアチップのバンプ部が、該回路基板上のは
んだ部と接触した後に、当該はんだ部が溶融せしめら
れ、当該はんだ部の溶融状態が維持されている間に、当
該ベアチップが該加熱ツールによる吸着作用から開放さ
れる様に構成されているフリップチップ接続方法であ
り、又本発明に係る第2の態様としては、ベアチップを
加熱ツールで吸着及び加熱し、フェイスダウン方式で当
該ベアチップのバンプ部を回路基板上のパッドを構成す
るはんだ部と接続させ、当該はんだ部を溶融して両者を
接合するフリップチップ接続装置において、当該加熱ツ
ールを下降乃至上昇させる駆動手段、当該駆動手段が当
該加熱ツールの下降駆動モードと連動し、当該加熱ツー
ルが下降継続中に、当該加熱ツールの温度を上昇させ、
当該ベアチップのバンプ部と回路基板上のはんだ部とが
当接する時点若しくはその直前に、当該加熱ツールの温
度が、該はんだ部の融点温度以上の温度に到達する様に
該加熱ツールを温度制御する温度制御手段、当該ベアチ
ップのバンプ部と該回路基板上のはんだ部とが互いに当
接せしめられ、当該はんだ部が溶融状態にある間に、該
ベアチップを当該加熱ツールによる拘束から開放させる
手段、及び該ベアチップが当該加熱ツールの拘束から開
放された後、該加熱ツールを上昇させる手段、とから構
成されているフリップチップ接続装置である。In order to achieve the above-mentioned object, the present invention employs the following basic technical structure. That is, as a first aspect according to the present invention, a bare chip is sucked and heated by a heating tool, and the bump portion of the bare chip is connected to a solder portion forming a pad on a circuit board in a face-down manner, In the flip-chip mounting method of melting and bonding the two, before the bump portion of the bare chip contacts the solder portion on the circuit board, the solder portion does not melt, and the bump portion of the bare chip After contacting the solder part on the circuit board, the solder part is melted, and while the molten state of the solder part is maintained, the bare chip is released from the suction action by the heating tool. The second embodiment according to the present invention relates to a flip chip connecting method, wherein a bare chip is sucked and heated by a heating tool, Driving means for lowering or raising the heating tool in a flip-chip connection device for connecting the bump portion of the bare chip to a solder portion forming a pad on a circuit board in a flip-chip manner, melting the solder portion and joining the two. The driving means is interlocked with the descent drive mode of the heating tool, while the heating tool continues to descend, raises the temperature of the heating tool,
The temperature of the heating tool is controlled such that the temperature of the heating tool reaches a temperature equal to or higher than the melting point of the solder portion at or immediately before the bump portion of the bare chip and the solder portion on the circuit board contact. Temperature control means, the bump portion of the bare chip and the solder portion on the circuit board are brought into contact with each other, and while the solder portion is in a molten state, means for releasing the bare chip from restraint by the heating tool, and Means for raising the heating tool after the bare chip has been released from the restraint of the heating tool.
【0009】[0009]
【発明の実施の形態】本発明に係るフリップチップ接続
方法及びフリップチップ接続装置は、上記した様な技術
構成を採用しているので、例えば、接合材料としてはん
だを用い、フェースダウンで回路基板上にフリップチッ
プ実装する方式において、ベアチップと回路基板の双方
の電極が接触してからはんだ部を溶融する手段と、ベア
チップを加熱しながら吸着を開放することによりセルフ
アライメント効果が得られる手段とを備えたフリップチ
ップ接続装置を使用するものであり又、係る装置を使用
してフリップチップ接続方法を実行するものである。DESCRIPTION OF THE PREFERRED EMBODIMENTS The flip-chip connection method and the flip-chip connection device according to the present invention employ the above-described technical configuration. In the flip-chip mounting method, there are provided a means for melting the solder portion after both electrodes of the bare chip and the circuit board are in contact with each other, and a means for obtaining a self-alignment effect by releasing the suction while heating the bare chip. And a flip-chip connection method is performed by using such a device.
【0010】つまり、本発明に係るフリップチップ接続
方法としては、例えば、ベアチップと回路基板の双方の
電極が接触してからはんだ部を溶融するため、はんだの
融点以上に加熱する時間が必要最小限で済み、はんだ部
の酸化および回路基板の熱膨張を低減することができ
る。またベアチップを加熱しながら吸着を開放するた
め、はんだ部の溶融時の表面張力の作用によりセルフア
ライメント効果が得られる。In other words, in the flip chip connection method according to the present invention, for example, since the solder portion is melted after the electrodes of both the bare chip and the circuit board are in contact with each other, the time required to heat the solder above the melting point of the solder is minimized. Thus, the oxidation of the solder portion and the thermal expansion of the circuit board can be reduced. In addition, since the suction is released while heating the bare chip, a self-alignment effect can be obtained by the action of the surface tension when the solder portion is melted.
【0011】[0011]
【実施例】以下に、本発明に係るフリップチップ接続方
法及びフリップチップ接続装置の一具体例の構成を図面
を参照しながら詳細に説明する。図1(A)から(F)
は、本発明に係るフリップチップ接続方法の1具体例の
工程手順を示す断面図であり、図中、ベアチップ3を加
熱ツール4で吸着及び加熱し、フェイスダウン方式で当
該ベアチップ3のバンプ部2を回路基板5上のパッドを
構成するはんだ部7と接続させ、当該はんだ部7を溶融
して両者を接合するフリップチップ実装方法において、
当該ベアチップ3のバンプ部2が、該回路基板5上のは
んだ部7と接触する以前は、当該はんだ部7は溶融する
事がなく、当該ベアチップ3のバンプ部2が、該回路基
板5上のはんだ部7と接触した後に、当該はんだ部7が
溶融せしめられ、当該はんだ部7の溶融状態が維持され
ている間に、当該ベアチップ3が該加熱ツール4による
吸着作用から開放される様に構成されているフリップチ
ップ接続方法が示されている。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The configuration of one embodiment of the flip-chip connection method and flip-chip connection device according to the present invention will be described below in detail with reference to the drawings. 1 (A) to 1 (F)
FIG. 4 is a cross-sectional view showing a process procedure of one specific example of the flip chip connection method according to the present invention. In the drawing, a bare chip 3 is sucked and heated by a heating tool 4 and the bump 2 Is connected to a solder portion 7 constituting a pad on the circuit board 5, and the solder portion 7 is melted to join the two.
Before the bump 2 of the bare chip 3 contacts the solder 7 on the circuit board 5, the solder 7 does not melt, and the bump 2 of the bare chip 3 After the solder portion 7 is contacted with the solder portion 7, the solder portion 7 is melted, and the bare chip 3 is released from the suction action by the heating tool 4 while the molten state of the solder portion 7 is maintained. The illustrated flip-chip connection method is shown.
【0012】此処で、本発明の上記具体例について、よ
り詳細に説明するならば、図1(A)から図1(F)は
本発明の上記具体例に於けるフリップチップ接続方法の
実装フローを各工程毎に順に説明したものである。即
ち、図1(A)に示す様に、先ず、あらかじめ電極1上
にバンプ部2を形成したベアチップ3をフェースダウン
で加熱ツール4で吸着した後、ベアチップ3と回路基板
5の位置ずれ修正を、公知の画像処理手段を用いて、画
像処理を行う事により実行する。Here, the above-mentioned embodiment of the present invention will be described in more detail. FIGS. 1A to 1F show a mounting flow of the flip-chip connection method in the above-mentioned embodiment of the present invention. Are described in order for each step. That is, as shown in FIG. 1A, first, a bare chip 3 having a bump portion 2 formed in advance on an electrode 1 is suctioned face down with a heating tool 4, and then the positional displacement between the bare chip 3 and the circuit board 5 is corrected. This is performed by performing image processing using known image processing means.
【0013】次に図1(B)に示す様に、ベアチップ3
を吸着した加熱ツール4を下降させ、回路基板5上のパ
ッド部6にあらかじめ搭載されたはんだ部7と接触させ
る。この時の加熱ツール4の加熱条件としては、図2
(B)に示されている様に、回路基板5側の温度は、上
記のフリップチップ接続方法の全工程が実行される間、
はんだ部7の融点以下の温度に設定されている事が望ま
しく、更には当該温度は、上記フリップチップ接続方法
の全工程を通じて、略一定の温度に維持される事が好ま
しい。Next, as shown in FIG.
The heating tool 4 that has absorbed the heat is lowered, and is brought into contact with the solder portion 7 previously mounted on the pad portion 6 on the circuit board 5. The heating conditions of the heating tool 4 at this time are as shown in FIG.
As shown in (B), the temperature on the circuit board 5 side is maintained while all the steps of the flip-chip connection method are performed.
The temperature is desirably set to a temperature equal to or lower than the melting point of the solder portion 7, and it is preferable that the temperature be maintained at a substantially constant temperature throughout the flip chip connection method.
【0014】一方、該加熱ツール4の温度条件は、図2
(B)に示されている様に、工程の推移と共に変化する
様に構成されているものである。即ち、その加熱条件の
一例としては、ベアチップ3のバンプ部2がはんだ部7
と接触する以前に於いては、ベアチップ3のバンプ部2
の温度が、はんだ部を構成するはんだの融点以下の温度
を維持する様に構成し、バンプ部2が少なくともはんだ
部7と接触する直前、若しくは接触時には、バンプ部2
とはんだ部7とが接触している間は、該バンプ部2の温
度が、はんだ部7の融点以上になるよう設定する様に構
成される。On the other hand, the temperature condition of the heating tool 4 is shown in FIG.
As shown in (B), it is configured to change with the progress of the process. That is, as an example of the heating condition, the bump 2 of the bare chip 3
Before the contact with the bump portion 2 of the bare chip 3
Is maintained at a temperature equal to or lower than the melting point of the solder constituting the solder portion, and at least immediately before or when the bump portion 2 comes into contact with the solder portion 7, the bump portion 2
The configuration is such that the temperature of the bump section 2 is set to be equal to or higher than the melting point of the solder section 7 while the solder section 7 and the solder section 7 are in contact with each other.
【0015】従って、本発明に於ける上記具体例に於い
ては、バンプ部2とはんだ部7が接触する前の時点では
(図1(B))、はんだ部7のはんだは溶融せず、図1
(C)に示す様に、両者が接触後に初めてはんだ部7が
溶融状態になる様にする事が特徴である。本発明に於い
て、はんだ部7のはんだが溶融すると、図1(D)に示
す様に、溶融したはんだが、バンプ部2の表面に沿って
上昇する、所謂はんだのバンプ部2へのぬれが発生す
る。Therefore, in the above embodiment of the present invention, before the bump 2 and the solder 7 come into contact with each other (FIG. 1B), the solder of the solder 7 does not melt, FIG.
As shown in (C), the feature is that the solder portion 7 is brought into a molten state only after the two come into contact with each other. In the present invention, when the solder of the solder portion 7 melts, the molten solder rises along the surface of the bump portion 2 as shown in FIG. Occurs.
【0016】かかるぬれの状態が発生した場合に、当該
はんだが、バンプ部2の表面に沿って上昇する動作が停
止した場合には、ぬれが完了したものと見なし、その時
点で、図1(E)に示す様に、加熱ツール4によるベア
チップ3の吸着を停止し、エアーブローにより真空破壊
を行った後、加熱ツール4をわずかに上昇させる。この
ことにより加熱ツール4とベアチップ3の間に微少な間
隙が生じ、ベアチップ3の挙動が自由な状態となるとと
もに、加熱ツール4の輻射熱によりはんだ部7のはんだ
が溶融した状態が持続され、その結果、図1(F)に示
す様に、セルフアライメント作用が得られる。ついで加
熱ツール4を上昇させ接合を完了する。When the wetting state occurs and the operation of the solder rising along the surface of the bump portion 2 stops, it is considered that the wetting has been completed, and at that time, FIG. As shown in E), the suction of the bare chip 3 by the heating tool 4 is stopped, the vacuum is broken by air blow, and then the heating tool 4 is slightly raised. As a result, a minute gap is generated between the heating tool 4 and the bare chip 3, the behavior of the bare chip 3 becomes free, and the state in which the solder of the solder portion 7 is melted by the radiant heat of the heating tool 4 is maintained. As a result, a self-alignment effect is obtained as shown in FIG. Next, the heating tool 4 is raised to complete the joining.
【0017】図2(A)は図1に示す本発明の具体例の
形態における、加熱ツール4の上下動作と吸着動作の関
係を示したタイミングチャートである。即ち、図2
(A)に示す様に、時刻t1から時刻t2に於いて、ベ
アチップ3を吸着しながら加熱ツール4を予め定められ
た所定の位置aから位置bまで下降させ、回路基板5上
のパッド6を被覆しているはんだ部7とベアチップ3上
のバンプ部2を接触させる。その後時刻t3に到るま
で、位置bと略同一の位置cに下降させたまま下降操作
を停止し、その間に、はんだ部7を溶融させた後、時刻
t3に到達した時点で、例えばエアーブローにより真空
破壊を瞬間的(時刻t3とt4の間の時間)に行い、当
該ベアチップ3を該加熱ツール4から離反させ、その後
時刻t4以後は、吸着動作を停止する。FIG. 2A is a timing chart showing the relationship between the vertical movement and the suction operation of the heating tool 4 in the embodiment of the present invention shown in FIG. That is, FIG.
As shown in (A), from time t1 to time t2, the heating tool 4 is lowered from a predetermined position a to a position b while adsorbing the bare chip 3, and the pads 6 on the circuit board 5 are removed. The covering solder part 7 and the bump part 2 on the bare chip 3 are brought into contact with each other. After that, until the time t3, the lowering operation is stopped while being lowered to the position c substantially the same as the position b. During this time, the solder portion 7 is melted. To instantaneously (time between times t3 and t4) to separate the bare chip 3 from the heating tool 4, and then stop the suction operation after time t4.
【0018】その間も、当該加熱ツール4は、位置bと
略同一の位置dに下降させたままとなっている。次に時
刻t4から時刻t5の間に、加熱ツールを位置dから位
置eまでわずかに上昇させ、時刻t6に到るまで、当該
加熱ツールを位置eと略同一の位置fに保持される。During that time, the heating tool 4 is kept lowered to a position d substantially the same as the position b. Next, between the time t4 and the time t5, the heating tool is slightly raised from the position d to the position e, and the heating tool is held at the position f substantially the same as the position e until the time t6.
【0019】その後、該加熱ツールを当初の位置g迄上
昇させて、一周期の接合操作を完了する。一方、上記の
当該加熱ツール4の上下動動作及び吸着動作と同期する
当該加熱ツール4の温度変化のアルゴリズムの一例を図
2(B)に示す。即ち、当該加熱ツール4の加熱温度
は、該加熱ツール4が所定の位置aから下降し、回路基
板5上のパッドを被覆しているはんだ部7とベアチップ
3とが接触する時刻t2に到るまでは、当該はんだ部7
を構成するはんだの融点温度以下になる様に制御され
る。Thereafter, the heating tool is raised to the initial position g to complete one cycle of the joining operation. On the other hand, FIG. 2B shows an example of an algorithm of a temperature change of the heating tool 4 synchronized with the vertical movement operation and the suction operation of the heating tool 4. That is, the heating temperature of the heating tool 4 reaches time t2 at which the heating tool 4 drops from the predetermined position a and the solder portion 7 covering the pads on the circuit board 5 comes into contact with the bare chip 3. Until the solder part 7
Is controlled so as to be equal to or lower than the melting point temperature of the solder constituting the above.
【0020】具体的には、当該加熱ツール4の温度が、
該加熱ツール4が下降を開始する時点若しくはそれ以降
の適宜の時点から、当該加熱ツール4の加熱が開始さ
れ、当該加熱ツール4の温度が時刻t2に到達する直前
もしくは、その直後、あるいはそれ以降に、当該はんだ
部7を構成するはんだの融点温度以上となる様に設定さ
れるものである。Specifically, the temperature of the heating tool 4 is
The heating of the heating tool 4 is started from the time when the heating tool 4 starts lowering or an appropriate time thereafter, and immediately before or immediately after the temperature of the heating tool 4 reaches the time t2, or after that. The temperature is set so as to be equal to or higher than the melting point of the solder constituting the solder portion 7.
【0021】はんだ溶融後は、バンプへのはんだのぬれ
を生じさせると共に、溶融はんだの表面張力によりセル
フアライメント効果を得る為に、当該はんだのバンプ部
2へのぬれが完了した時点或いはその直前乃至直後であ
る時刻t6まで、はんだ溶融温度以上の温度に保持され
ることが望ましい。はんだのぬれ、及びセルフアライメ
ント作用が完了した時点である時刻t6に於いては、当
該加熱ツール4を上昇させると共に、当該加熱ツール4
の温度を初期の状態に戻す様に構成されている。After the solder is melted, the solder is wetted to the bumps, and the self-alignment effect is obtained by the surface tension of the molten solder. It is desirable to keep the temperature at or above the solder melting temperature until time t6, which is immediately after. At time t6 when the solder wetting and the self-alignment action are completed, the heating tool 4 is raised and the heating tool 4
Is returned to the initial state.
【0022】一方、本発明に於いては、当該回路基板5
側の温度条件としては、一般的には、当該回路基板5の
温度条件としては、当該はんだの融点以下の温度に設定
されている。更に、本発明に係るフリップチップ接続方
法に於いては、バンプ2の材質としてはAu、Cu、高
融点はんだ部7等は、金属材料を用い、ベアチップの電
極上、あるいは回路基板のパッド上、あるいは双方に形
成してもよい。またバンプを用いずに接合する場合もあ
る。On the other hand, in the present invention, the circuit board 5
Generally, the temperature condition of the circuit board 5 is set to a temperature equal to or lower than the melting point of the solder. Furthermore, in the flip chip connection method according to the present invention, Au, Cu, the high melting point solder portion 7 and the like are made of a metal material as the material of the bump 2 and are formed on bare chip electrodes or circuit board pads. Or you may form in both. In some cases, bonding is performed without using bumps.
【0023】ろう材として用いるはんだ部はベアチップ
の電極上、あるいは回路基板のパッド上、あるいは双方
に供給してもよい。加熱ツールの加熱方式としては常時
加熱方式、あるいはパルス加熱方式等を用いるが、常時
加熱方式の場合、はんだ部をベアチップ側に供給した形
態において、接合時のみはんだ部を溶融させる手段とし
て、熱源と加熱ツールを分離して熱源からの熱伝導で瞬
時に加熱ツールを昇温させる方式や、加熱ガスを加熱ツ
ールに噴射し、段階的に加熱温度を可変させる方式等を
用いる。The solder used as the brazing material may be supplied on the electrodes of the bare chip, on the pads of the circuit board, or on both. As a heating method of the heating tool, a constant heating method, a pulse heating method, or the like is used.In the case of the constant heating method, in a mode in which the solder portion is supplied to the bare chip side, as a means for melting the solder portion only at the time of joining, a heat source is used. A method in which the heating tool is separated and the temperature of the heating tool is instantaneously increased by heat conduction from a heat source, a method in which a heating gas is injected into the heating tool, and the heating temperature is varied stepwise are used.
【0024】即ち、本発明に於いては、該加熱ツール4
は、当該ベアチップ3を吸着しながら、フェイスダウン
方式で、下降する工程中に於いて、その温度が上昇せし
められ、少なくとも該ベアチップ3のバンプ部2が、該
回路基板5上のはんだ部7と接触する時点近傍に於いて
当該加熱ツール4の温度が、該はんだ部7の溶融温度以
上となる様に温度制御される事が望ましい。That is, in the present invention, the heating tool 4
The temperature of the bare chip 3 is raised during the lowering process by the face-down method while sucking the bare chip 3, so that at least the bump 2 of the bare chip 3 is in contact with the solder 7 on the circuit board 5. It is desirable that the temperature of the heating tool 4 be controlled so as to be equal to or higher than the melting temperature of the solder portion 7 near the point of contact.
【0025】更に、本発明に於いては、ベアチップ3を
加熱ツール4で吸着及び加熱し、フェイスダウン方式で
当該ベアチップ3のバンプ部2を回路基板5上のパッド
6を被覆するはんだ部7と接続させ、当該はんだ部7を
溶融して両者を接合するフリップチップ実装方法におい
て、例えば、(1)ベアチップを加熱ツールに吸着保持
させる工程、(2)当該ベアチップのバンプ部をフェイ
スダウン方式により回路基板上のはんだ部に当接させる
為、当該加熱ツールを下降させる工程、(3)当該加熱
ツールが下降継続中に、当該加熱ツールの温度を上昇さ
せ、当該ベアチップのバンプ部と回路基板上のはんだ部
とが当接する時点若しくはその直前に、当該加熱ツール
の温度が、該はんだ部の融点温度以上の温度に到達する
様に該加熱ツールを温度制御する工程、(4)当該ベア
チップのバンプ部と該回路基板上のはんだ部とを互いに
当接させて、当該はんだ部を溶融させる工程、(5)当
該はんだ部が溶融状態にある間に、該ベアチップを当該
加熱ツールによる拘束から開放させる工程、及び(6)
該ベアチップが当該加熱ツールの拘束から開放された
後、該加熱ツールを上昇させる工程、とから構成されて
いるフリップチップ接続方法が提供されるものである。Further, in the present invention, the bare chip 3 is sucked and heated by the heating tool 4, and the bump portion 2 of the bare chip 3 is connected to the solder portion 7 for covering the pad 6 on the circuit board 5 in a face-down manner. In the flip-chip mounting method of connecting and melting the solder portion 7 to join them together, for example, (1) a step of adsorbing and holding a bare chip on a heating tool, (2) a circuit of a bump portion of the bare chip by a face-down method Lowering the heating tool to make contact with the solder portion on the board; (3) raising the temperature of the heating tool while the heating tool continues to lower, so that the bump portion of the bare chip and the bump on the circuit board The heating tool is heated so that the temperature of the heating tool reaches a temperature equal to or higher than the melting point of the soldering part at or immediately before the soldering part contacts. A step of controlling the temperature, (4) a step of bringing the bump portion of the bare chip and a solder portion on the circuit board into contact with each other to melt the solder portion, and (5) while the solder portion is in a molten state. Releasing the bare chip from the restraint by the heating tool; and (6)
Elevating the heating tool after the bare chip is released from the restraint of the heating tool, and a flip chip connection method is provided.
【0026】より具体的には、本発明に係る上記した具
体例に於いては、当該加熱ツール4の加熱温度は、一旦
当該はんだ部7の溶融温度以上の温度に到達した後は、
該ベアチップ3のバンプ部と該回路基板上のはんだ部7
との接続が完了する時点迄、該はんだ部の溶融温度以上
の温度に維持せしめられ、その後所定の温度にまで低下
せしめられるものである。More specifically, in the above embodiment according to the present invention, once the heating temperature of the heating tool 4 reaches a temperature equal to or higher than the melting temperature of the solder portion 7,
The bump portion of the bare chip 3 and the solder portion 7 on the circuit board
Until the connection with the solder is completed, the temperature is maintained at a temperature equal to or higher than the melting temperature of the solder portion, and then lowered to a predetermined temperature.
【0027】更に、上記した様に、本発明に於いては、
該回路基板5の温度は、フリップチップ実装処理中に於
いて、予め定められた、当該はんだ部の溶融温度以下の
所定の温度に、固定的に設定されるものである事も望ま
しい。又、本発明に於いて、特に重要な、当該ベアチッ
プを該加熱ツールの吸着から開放させる時点の判断は、
特に特定されるものではないが、当該はんだ部7のはん
だが、バンプ部2に対してぬれが完了した時点を把握し
て吸着開放操作を制御する事が望ましい。Further, as described above, in the present invention,
It is preferable that the temperature of the circuit board 5 is fixedly set to a predetermined temperature equal to or lower than a predetermined melting temperature of the solder portion during the flip-chip mounting process. In addition, in the present invention, particularly important, the determination of the time to release the bare chip from the suction of the heating tool,
Although not particularly specified, it is desirable to control the suction releasing operation by grasping the point in time when the solder of the solder portion 7 has completed the wetting of the bump portion 2.
【0028】より具体的な当該制御方法としては、例え
ば、使用されるはんだの種類、一つのバンプを構成する
はんだの使用量、加熱温度、加熱方法、基板温度、パン
プの材料、接触圧、接触面積、パンプの形状等によっ
て、当該ぬれの状態が完了するタイミングが異なってく
るので、予め適宜の実験を行って、特定の制御テーブル
に、上記した様なそれぞれの環境条件、若しくはそれら
を組み合わせた環境条件のそれぞれについて、当該加熱
ツール4に対する加熱操作が開始されてから、ぬれ完了
時点が発生するまでの時間の最適値を求め、当該最適値
を関数として記憶させておき、当該制御テーブルに記憶
されているデータを使用して、上記開放操作を実行する
ものである。More specific control methods include, for example, the type of solder used, the amount of solder used to form one bump, the heating temperature, the heating method, the substrate temperature, the pump material, the contact pressure, and the contact pressure. Since the timing of completion of the wetting state varies depending on the area, the shape of the pump, and the like, appropriate experiments are performed in advance, and a specific control table is used to combine each of the environmental conditions as described above, or a combination thereof. For each of the environmental conditions, an optimum value of the time from the start of the heating operation on the heating tool 4 to the occurrence of the wetting completion point is determined, and the optimum value is stored as a function, and stored in the control table. The above-described opening operation is executed by using the stored data.
【0029】図3(A)は本発明の具体例に於いて使用
されるベアチップの構造の一例を示した平面図である。
ベアチップ3はパッドピッチ120μm、外形寸法縦横
10mm、厚さ0.3mmのものを使用し、アルミパッ
ド8上にAuワイヤーで80〜90μm径のボールバン
プ9を形成する。FIG. 3A is a plan view showing an example of the structure of a bare chip used in an embodiment of the present invention.
The bare chip 3 has a pad pitch of 120 μm, an outer dimension of 10 mm in length and width, and a thickness of 0.3 mm. A ball bump 9 having a diameter of 80 to 90 μm is formed on an aluminum pad 8 with an Au wire.
【0030】又、図3(B)は本発明の具体例に於いて
使用される回路基板の構造の一例を示した平面図であ
る。回路基板10はガラスエポキシ基板上にビルドアッ
プ樹脂で積層したプリント配線板を用いる。またプリン
ト配線板10上には200〜300μm幅で開口したソ
ルダーレジスト処理11を施し、露出した部分のパッド
6には、厚さ25〜30μmのSn−3.5Agの組成
からなるはんだ部7をめっき処理により供給する。FIG. 3B is a plan view showing an example of the structure of a circuit board used in an embodiment of the present invention. The circuit board 10 uses a printed wiring board laminated with a build-up resin on a glass epoxy board. On the printed wiring board 10, a solder resist treatment 11 having an opening with a width of 200 to 300 μm is performed, and a solder portion 7 made of a composition of Sn-3.5Ag having a thickness of 25 to 30 μm is formed on the exposed pad 6. Supplied by plating.
【0031】図4及び図5は、本発明に於けるフリップ
チップ接続方法の他の例におけるフリップチップ実装工
程を、断面図で示したフロー図である。図4(A)〜図
4(D)の各工程は、従来例を説明する図6(A)〜図
6(D)の各工程に対応し、又 図5(E)〜図5
(G)の各工程は、従来例を説明する図7(E)〜図7
(G)の各工程に対応する。FIGS. 4 and 5 are cross-sectional flow charts showing a flip-chip mounting process in another example of the flip-chip connection method according to the present invention. 4 (A) to 4 (D) correspond to the steps of FIGS. 6 (A) to 6 (D) for explaining the conventional example, and FIGS. 5 (E) to 5 (D).
FIGS. 7 (E) to 7 (E) illustrate a conventional example.
This corresponds to each step of (G).
【0032】つまり、本発明に係るフリップチップ接続
装置は常時加熱方式のものを使用し、基板側加熱ステー
ジ12を60〜100℃に、加熱ツール4側を240〜
260℃に加熱する。ボールバンプ9を形成したベアチ
ップ3とはんだ部7を形成したプリント配線板10をフ
リップチップ接続装置の所定の位置に設置し、ベアチッ
プ3をピックアップヘッド13でトレー14から取り出
し180°反転させた後、加熱ツール4に受け渡す。
(図4(A)〜図4(B))次に下方に設置されたカメ
ラ15と照明16によりベアチップ3の回路面の画像を
取り込み、あらかじめ教示しておいた認識パターンが画
面上のどの位置にあるか、画像処理装置によって求めベ
アチップ3の吸着姿勢を算出する。同様にプリント配線
板10の保持姿勢も、上方に設けられたカメラ15と照
明16により画像を取り込み算出する。(図4(C)〜
図4(D))次にボールバンプ9とパッド6の位置が一
致するよう、X、Y、Θ軸を稼働させ双方の位置ずれを
修正する。(図5(E))本実施例ではセルフアライメ
ント効果を確認するために、ボールバンプ9の中心とパ
ッド6の中心を30〜40μmずらした状態で接触する
ようオフセット調整をする。That is, the flip chip connecting apparatus according to the present invention uses a constant heating type, the substrate side heating stage 12 is set at 60 to 100 ° C., and the heating tool 4 side is set at 240 to 100
Heat to 260 ° C. The bare chip 3 on which the ball bumps 9 are formed and the printed wiring board 10 on which the solder portion 7 is formed are installed at predetermined positions of a flip chip connecting device, and the bare chip 3 is taken out of the tray 14 by the pickup head 13 and inverted by 180 °. Transfer to heating tool 4.
(FIGS. 4A and 4B) Next, an image of the circuit surface of the bare chip 3 is captured by the camera 15 and the illumination 16 installed below, and the recognition pattern taught in advance is displayed on any position on the screen. Is obtained by the image processing apparatus, and the suction posture of the bare chip 3 is calculated. Similarly, the holding posture of the printed wiring board 10 is calculated by capturing an image using the camera 15 and the illumination 16 provided above. (FIG. 4 (C) ~
(D) Next, the X, Y, and Θ axes are operated so that the positions of the ball bumps 9 and the pads 6 coincide with each other, thereby correcting the positional deviation of both. (FIG. 5 (E)) In this embodiment, in order to confirm the self-alignment effect, the offset is adjusted so that the center of the ball bump 9 and the center of the pad 6 are in contact with each other while being shifted by 30 to 40 μm.
【0033】その後加熱ツール4を下降させ、はんだ部
7とボールバンプ9を接触させる。双方が接触すると2
40〜260℃に加熱されたボールバンプ9からの熱伝
導によりはんだ部7が溶融し、ボールバンプ9へのぬれ
を生じさせる。(図5(F))その後、全パッド上のは
んだ部7が溶融するまで数秒間状態を維持した後、ベア
チップ3の吸着を停止し真空破壊をするためブローを行
う。(図5(G))次に加熱ツール4を約100μm上
昇させて微少な間隙部を形成する(図5(G))。これ
により加熱ツール4の輻射熱によりはんだ部7が溶融し
た状態が維持され、ベアチップ3の挙動が自由になるた
め、溶融はんだ部の表面張力により前記した30〜40
μmの位置ずれが修復される。この状態を数秒間保持し
た後、加熱ツール4を上昇させる。これにより加熱ツー
ルからの輻射熱が加わらなくなるため、はんだ部7が固
化し接合が完了する。Thereafter, the heating tool 4 is lowered to bring the solder portion 7 and the ball bump 9 into contact. When both touch, 2
The solder portion 7 is melted by heat conduction from the ball bump 9 heated to 40 to 260 ° C., and causes the ball bump 9 to wet. (FIG. 5 (F)) Thereafter, after maintaining the state for several seconds until the solder portions 7 on all the pads are melted, the suction of the bare chip 3 is stopped and blowing is performed to break the vacuum. (FIG. 5G) Next, the heating tool 4 is raised by about 100 μm to form a minute gap (FIG. 5G). Accordingly, the state in which the solder portion 7 is melted by the radiant heat of the heating tool 4 is maintained, and the behavior of the bare chip 3 becomes free.
The displacement of μm is repaired. After maintaining this state for several seconds, the heating tool 4 is raised. As a result, radiant heat from the heating tool is not applied, so that the solder portion 7 is solidified and the joining is completed.
【0034】なお接合雰囲気として、酸素濃度1〜4%
の比較的高い酸素濃度中でも接合が可能である。本発明
に係るフリップチップ接続装置は、上記した具体例の説
明から理解される様に、ベアチップを加熱ツールで吸着
及び加熱し、フェイスダウン方式で当該ベアチップのバ
ンプ部を回路基板上のパッドを構成するはんだ部と接続
させ、当該はんだ部を溶融して両者を接合するフリップ
チップ接続装置において、当該加熱ツールを下降乃至上
昇させる駆動手段50、当該駆動手段50の当該加熱ツ
ール4の下降手段53と連動し、当該加熱ツールが下降
継続中に、当該加熱ツールの温度を上昇させ、当該ベア
チップのバンプ部と回路基板上のはんだ部とが当接する
時点若しくはその直前に、当該加熱ツールの温度が、該
はんだ部の融点温度以上の温度に到達する様に該加熱ツ
ールを温度制御する温度制御手段51、当該ベアチップ
のバンプ部と該回路基板上のはんだ部とが互いに当接せ
しめられ、当該はんだ部が溶融状態にある間に、該ベア
チップを当該加熱ツールによる拘束から開放させる手段
52、及び該ベアチップが当該加熱ツールの拘束から開
放された後、該加熱ツールを上昇させる手段54、とか
ら構成されているフリップチップ接続装置である。The bonding atmosphere is an oxygen concentration of 1 to 4%.
Bonding can be performed even at a relatively high oxygen concentration. As understood from the above description of the specific example, the flip chip connection device according to the present invention suctions and heats a bare chip with a heating tool, and forms a bump portion of the bare chip into a pad on a circuit board in a face-down manner. In a flip-chip connection device that connects to a solder portion to be heated, melts the solder portion, and joins the two, a driving unit 50 that lowers or raises the heating tool, a lowering unit 53 of the heating tool 4 of the driving unit 50, In conjunction with this, while the heating tool continues to descend, the temperature of the heating tool is increased, and at or immediately before the bump portion of the bare chip and the solder portion on the circuit board are in contact, the temperature of the heating tool is Temperature control means 51 for controlling the temperature of the heating tool so as to reach a temperature equal to or higher than the melting point of the solder portion; Means 52 for releasing the bare chip from the restraint by the heating tool while the solder portion on the circuit board is brought into contact with each other and the solder portion is in a molten state; and Means 54 for raising the heating tool after it has been opened.
【0035】更に、本発明に於ける当該フリップチップ
接続装置に於いては、該ベアチップを当該加熱ツールに
よる拘束から開放させる手段52は、予め定められた制
御条件に応答して駆動されるものである事が望ましく、
更には、当該制御条件は、少なくとも温度或いは時間を
関数とするものである事が好ましい。特に本発明に於い
ては、当該制御条件は、当該はんだ部のバンプ部へのぬ
れが完了した時点を適宜の手段により把握して、当該ぬ
れが完了した時点の有無によって、ベアチップ3の加熱
ツール4からの開放操作を実行する様に構成されている
ものである。Further, in the flip chip connecting apparatus according to the present invention, the means 52 for releasing the bare chip from the restraint by the heating tool is driven in response to a predetermined control condition. Desirably,
Furthermore, it is preferable that the control condition be a function of at least temperature or time. In particular, in the present invention, the control condition is such that the time when the wetting of the solder portion to the bump portion is completed is grasped by appropriate means, and the heating tool of the bare chip 3 is determined by the presence or absence of the time when the wetting is completed. 4 is configured to execute an opening operation.
【0036】上記各手段の制御は、適宜の中央演算制御
手段55によって、総合的に制御される様に構成される
事が望ましい。It is desirable that the control of each of the above-described units is configured to be comprehensively controlled by an appropriate central processing control unit 55.
【0037】[0037]
【発明の効果】本発明に係るフリップチップ接続方法及
びフリップチップ接続装置は、上記した様な構成を採用
しているので、はんだのバンプへのぬれが完了した時点
でベアチップの吸着を開放し、加熱ツールを微少に上昇
させることにより、ベアチップと加熱ツールの間にわず
かな間隙を生じさせるため、ベアチップの挙動が開放さ
れるとともに加熱ツールの輻射熱ではんだの溶融状態が
保たれ、溶融はんだの表面張力によりセルフアライメン
ト効果が得られるものである。これによりフリップチッ
プ搭載機の保証精度がある程度悪くても、結果的に高精
度なフリップチップ実装が可能となる。また従来の同様
な技術に比べ、はんだの酸化が必要最小限に抑止でき、
また樹脂系のプリント配線板等の耐熱性が比較的低い回
路基板でも、高品質・高信頼性の接合が可能となる。The flip-chip connection method and the flip-chip connection device according to the present invention employ the above-described configuration, so that when the solder is completely wetted to the bumps, the suction of the bare chip is released, By raising the heating tool slightly, a small gap is created between the bare chip and the heating tool, which releases the behavior of the bare chip and keeps the molten state of the solder by the radiant heat of the heating tool, and the surface of the molten solder The self-alignment effect can be obtained by the tension. As a result, even if the guaranteed accuracy of the flip-chip mounting machine is poor to some extent, high-precision flip-chip mounting becomes possible. Oxidation of solder can be suppressed to the minimum necessary compared to similar technologies in the past,
In addition, high-quality and highly reliable bonding can be performed even on a circuit board having relatively low heat resistance, such as a resin-based printed wiring board.
【0038】即ち、本発明に係るフリップチップ接続方
法及びフリップチップ接続装置は、上記した様な構成を
採用しているので、セルフアライメント効果を得ること
により、フリップチップ搭載機の位置決め精度として、
高いレベルの精度を必要としないことである。その理由
は、ベアチップを加熱しながら加熱ツールによる吸着を
開放するため、はんだ部溶融時の表面張力の作用により
セルフアライメント効果を得ることができるからであ
る。That is, since the flip-chip connection method and the flip-chip connection device according to the present invention employ the above-described configuration, by obtaining a self-alignment effect, the positioning accuracy of the flip-chip mounting machine can be improved.
It does not require a high level of accuracy. The reason is that since the suction by the heating tool is released while the bare chip is being heated, the self-alignment effect can be obtained by the action of the surface tension when the solder portion is melted.
【0039】又、他の効果としては、あらかじめ、はん
だ部を溶融させておく従来の方式に比べ、はんだ部の酸
化が少なくフラックスレス接合で且つ比較的高い酸素濃
度域での接合が可能となる。また樹脂系の回路基板を用
い且つ回路基板のパッド上にはんだ部を供給する形態に
おいても、熱膨張による接合部に対する影響を低減する
ことができる。その理由は、ベアチップと回路基板の双
方の電極が接触してからはんだ部を溶融させるため、は
んだ部の融点以上に加熱する時間を必要最小限に抑える
ことができるからである。Another effect is that, compared with the conventional method in which the solder portion is melted in advance, the solder portion is less oxidized, and the fluxless joining can be performed in a relatively high oxygen concentration region. . In addition, even in a mode in which a resin-based circuit board is used and the solder portion is supplied on the pads of the circuit board, the influence of the thermal expansion on the joint can be reduced. The reason is that the solder portion is melted after the electrodes of both the bare chip and the circuit board are in contact with each other, so that the time required to heat the solder portion to the melting point or more can be minimized.
【図1】図1(A)〜図1(F)は、本発明に係るフリ
ップチップ接続方法の一具体例に於けるフリップチップ
実装方法の各工程を断面図で示したフロー図である。FIGS. 1A to 1F are flowcharts showing cross-sectional views of respective steps of a flip-chip mounting method in a specific example of a flip-chip connection method according to the present invention.
【図2】図2(A)は、図1に示す本発明の具体例に使
用される加熱ツールと吸着動作のタイミング関係を示し
たタイミングチャートであり、図2(B)は、加熱温度
の変化状態を示すグラフである。FIG. 2A is a timing chart showing a timing relationship between a heating tool used in the specific example of the present invention shown in FIG. 1 and a suction operation, and FIG. It is a graph which shows a change state.
【図3】図3(A)は本発明に於ける一具体例のベアチ
ップの構造を示した平面図であり、図3(B)は本発明
に於ける一具体例の回路基板の構造を示した平面図であ
る。FIG. 3A is a plan view showing a structure of a bare chip according to one embodiment of the present invention, and FIG. 3B is a plan view showing a structure of a circuit board according to one embodiment of the present invention; It is the top view shown.
【図4】図4(A)〜図4(D)は、本発明に係るフリ
ップチップ接続方法の他の具体例に於けるフリップチッ
プ実装方法の各工程を断面図で示したフロー図である。FIGS. 4A to 4D are flow charts showing cross-sectional views of each step of a flip-chip mounting method in another specific example of the flip-chip connection method according to the present invention. .
【図5】図5(E)〜図5(G)は、本発明に係るフリ
ップチップ接続方法の他の具体例に於けるフリップチッ
プ実装方法の各工程を断面図で示したフロー図である。FIGS. 5 (E) to 5 (G) are flow diagrams showing steps of a flip chip mounting method in another specific example of the flip chip connection method according to the present invention in a sectional view. .
【図6】図6(A)〜図6(D)は、従来のフリップチ
ップ接続方法に於けるフリップチップ実装方法の各工程
を断面図で示したフロー図である。6 (A) to 6 (D) are flowcharts showing cross-sectional views of respective steps of a flip-chip mounting method in a conventional flip-chip connection method.
【図7】図7(E)〜図7(G)は、従来のフリップチ
ップ接続方法に於けるフリップチップ実装方法の各工程
を断面図で示したフロー図である。FIGS. 7 (E) to 7 (G) are flow diagrams showing steps of a flip-chip mounting method in a conventional flip-chip connection method in a cross-sectional view.
1・・・電極 2・・・バンプ部 3・・・ベアチップ 4・・・加熱ツール 5・・・回路基板 6・・・パッド 7・・・はんだ部 8・・・アルミパッド 9・・・ボールバンプ 10・・・プリント配線板 11・・・ソルダーレジスト 12・・・基板側加熱ステージ 13・・・ピックアップヘッド 14・・・トレー 15・・・カメラ 16・・・照明 DESCRIPTION OF SYMBOLS 1 ... Electrode 2 ... Bump part 3 ... Bare chip 4 ... Heating tool 5 ... Circuit board 6 ... Pad 7 ... Solder part 8 ... Aluminum pad 9 ... Ball Bump 10 ... Printed wiring board 11 ... Solder resist 12 ... Board side heating stage 13 ... Pickup head 14 ... Tray 15 ... Camera 16 ... Lighting
Claims (10)
し、フェイスダウン方式で当該ベアチップのバンプ部を
回路基板上のパッドを構成するはんだ部と接続させ、当
該はんだ部を溶融して両者を接合するフリップチップ実
装方法において、当該ベアチップのバンプ部が、該回路
基板上のはんだ部と接触する以前は、当該はんだ部は溶
融する事がなく、当該ベアチップのバンプ部が、該回路
基板上のはんだ部と接触した後に、当該はんだ部が溶融
せしめられ、当該はんだ部の溶融状態が維持されている
間に、当該ベアチップが該加熱ツールによる吸着作用か
ら開放される様に構成されている事を特徴とするフリッ
プチップ接続方法。1. A bare chip is attracted and heated by a heating tool, a bump portion of the bare chip is connected to a solder portion forming a pad on a circuit board by a face-down method, and the solder portion is melted and joined. In the flip-chip mounting method, before the bump portion of the bare chip comes into contact with the solder portion on the circuit board, the solder portion does not melt, and the bump portion of the bare chip changes the solder portion on the circuit board. After the contact, the solder portion is melted, and while the molten state of the solder portion is maintained, the bare chip is configured to be released from the suction action by the heating tool, Flip chip connection method.
しながら、フェイスダウン方式で、下降する工程中に於
いて、その温度が上昇せしめられ、少なくとも該ベアチ
ップのバンプ部が、該回路基板上のはんだ部と接触する
時点近傍に於いて当該温度が、該はんだ部の溶融温度以
上となる様に温度制御される事を特徴とする請求項1記
載のフリップチップ接続方法。2. The temperature of the heating tool is raised during a step of descending by a face-down method while adsorbing the bare chip, so that at least a bump portion of the bare chip is mounted on the circuit board. 2. The method according to claim 1, wherein the temperature is controlled so as to be equal to or higher than the melting temperature of the solder portion in the vicinity of the point of contact with the solder portion.
し、フェイスダウン方式で当該ベアチップのバンプ部を
回路基板上のパッドを構成するはんだ部と接続させ、当
該はんだ部を溶融して両者を接合するフリップチップ実
装方法において、 ベアチップを加熱ツールに吸着保持させる工程、 当該ベアチップのバンプ部をフェイスダウン方式により
回路基板上のはんだ部に当接させる為、当該加熱ツール
を下降させる工程、 当該加熱ツールが下降継続中に、当該加熱ツールの温度
を上昇させ、当該ベアチップのバンプ部と回路基板上の
はんだ部とが当接する時点若しくはその直前に、当該加
熱ツールの温度が、該はんだ部の融点温度以上の温度に
到達する様に該加熱ツールを温度制御する工程、 当該ベアチップのバンプ部と該回路基板上のはんだ部と
を互いに当接させて、当該はんだ部を溶融させる工程、 当該はんだ部が溶融状態にある間に、該ベアチップを当
該加熱ツールによる拘束から開放させる工程、及び該ベ
アチップが当該加熱ツールの拘束から開放された後、該
加熱ツールを上昇させる工程、 とから構成されている事を特徴とするフリップチップ接
続方法。3. The bare chip is attracted and heated by a heating tool, and the bump portion of the bare chip is connected to a solder portion forming a pad on a circuit board by a face-down method, and the solder portion is melted and joined. In the flip chip mounting method, a step of attracting and holding the bare chip on a heating tool, a step of lowering the heating tool to bring a bump portion of the bare chip into contact with a solder portion on a circuit board by a face-down method, While the descent is continuing, the temperature of the heating tool is raised, and at or immediately before the bump portion of the bare chip and the solder portion on the circuit board come into contact with each other, the temperature of the heating tool is equal to or higher than the melting point temperature of the solder portion. Controlling the temperature of the heating tool so as to reach the temperature of the bumps of the bare chip and the circuit board. A step of melting the solder part by contacting the solder part with each other, and a step of releasing the bare chip from the restraint by the heating tool while the solder part is in a molten state; and Raising the heating tool after being released from the constraint, and a method of connecting a flip chip.
はんだ部の溶融温度以上の温度に到達した後は、該ベア
チップのバンプ部と該回路基板上のはんだ部との接続が
完了する時点迄、該はんだ部の溶融温度以上の温度に維
持せしめられ、その後所定の温度にまで低下せしめられ
るものである事を特徴とする請求項3記載のフリップチ
ップ接続方法。4. After the heating temperature of the heating tool once reaches a temperature equal to or higher than the melting temperature of the solder portion, the heating tool is heated until the connection between the bump portion of the bare chip and the solder portion on the circuit board is completed. 4. The method according to claim 3, wherein the temperature is maintained at a temperature equal to or higher than the melting temperature of the solder portion, and thereafter, the temperature is lowered to a predetermined temperature.
装処理中に於いて、予め定められた、当該はんだ部の溶
融温度以下の所定の温度に、固定的に設定されるもので
ある事を特徴とする請求項3記載のフリップチップ接続
方法。5. The temperature of the circuit board is fixedly set to a predetermined temperature equal to or lower than a predetermined melting temperature of the solder portion during a flip-chip mounting process. The flip chip connection method according to claim 3, wherein:
ら開放させる時点は、当該はんだ部のバンプ部へのぬれ
が完了した時点である事を特徴とする請求項1乃至5の
何れかに記載のフリップチップ接続方法。6. The method according to claim 1, wherein the time when the bare chip is released from the suction of the heating tool is a time when the wetting of the solder portion to the bump portion is completed. Flip chip connection method.
し、フェイスダウン方式で当該ベアチップのバンプ部を
回路基板上のパッドを構成するはんだ部と接続させ、当
該はんだ部を溶融して両者を接合するフリップチップ接
続装置において、当該加熱ツールを下降乃至上昇させる
駆動手段、当該駆動手段の当該加熱ツールの下降駆動モ
ードと連動し、当該加熱ツールが下降継続中に、当該加
熱ツールの温度を上昇させ、当該ベアチップのバンプ部
と回路基板上のはんだ部とが当接する時点若しくはその
直前に、当該加熱ツールの温度が、該はんだ部の融点温
度以上の温度に到達する様に該加熱ツールを温度制御す
る温度制御手段、当該ベアチップのバンプ部と該回路基
板上のはんだ部とが互いに当接せしめられ、当該はんだ
部が溶融状態にある間に、該ベアチップを当該加熱ツー
ルによる拘束から開放させる手段、及び該ベアチップが
当該加熱ツールの拘束から開放された後、該加熱ツール
を上昇させる手段、とから構成されている事を特徴とす
るフリップチップ接続装置。7. The bare chip is attracted and heated by a heating tool, and the bump portion of the bare chip is connected to a solder portion forming a pad on a circuit board in a face-down manner, and the solder portion is melted and joined. In the flip-chip connection device, the driving means for lowering or raising the heating tool, in conjunction with the lowering driving mode of the heating tool of the driving means, while the heating tool continues to lower, raise the temperature of the heating tool, The temperature of the heating tool is controlled such that the temperature of the heating tool reaches a temperature equal to or higher than the melting point of the solder portion at or immediately before the bump portion of the bare chip and the solder portion on the circuit board contact. Temperature control means, the bump portion of the bare chip and the solder portion on the circuit board are brought into contact with each other, and the solder portion is in a molten state. Meanwhile, means for releasing the bare chip from the restraint by the heating tool, and means for raising the heating tool after the bare chip is released from the restraint of the heating tool. Flip chip connection device.
束から開放させる手段は、予め定められた制御条件に応
答して駆動されるものである事を特徴とする請求項7記
載のフリップチップ接続装置。8. The flip chip connection device according to claim 7, wherein the means for releasing the bare chip from the restraint by the heating tool is driven in response to a predetermined control condition.
時間を関数とするものである事を特徴とする請求項8記
載のフリップチップ接続装置。9. The flip-chip connection device according to claim 8, wherein the control condition is a function of at least temperature or time.
プ部へのぬれが完了したか否かに基づいたものである事
を特徴とする請求項8記載のフリップチップ接続装置。10. The flip-chip connection device according to claim 8, wherein the control condition is based on whether or not wetting of the solder portion to the bump portion is completed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9134756A JP2947220B2 (en) | 1997-05-26 | 1997-05-26 | Flip chip connection method and flip chip mounting device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9134756A JP2947220B2 (en) | 1997-05-26 | 1997-05-26 | Flip chip connection method and flip chip mounting device |
Publications (2)
Publication Number | Publication Date |
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JPH10326805A true JPH10326805A (en) | 1998-12-08 |
JP2947220B2 JP2947220B2 (en) | 1999-09-13 |
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JP9134756A Expired - Fee Related JP2947220B2 (en) | 1997-05-26 | 1997-05-26 | Flip chip connection method and flip chip mounting device |
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Cited By (3)
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KR100503223B1 (en) * | 2000-10-25 | 2005-07-25 | 마쯔시다덴기산교 가부시키가이샤 | Method for mounting electric components |
JP2010103541A (en) * | 2008-10-27 | 2010-05-06 | Asm Assembly Automation Ltd | Direct die bonding using heated bond head |
KR101214336B1 (en) | 2010-07-22 | 2012-12-24 | 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 | Thermal Compress Bonding |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7296727B2 (en) | 2001-06-27 | 2007-11-20 | Matsushita Electric Industrial Co., Ltd. | Apparatus and method for mounting electronic components |
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JPS5645041A (en) * | 1979-09-21 | 1981-04-24 | Hitachi Ltd | Semiconductor integrated circuit device |
JPH06132353A (en) * | 1992-04-06 | 1994-05-13 | Mega Chips:Kk | Semiconductor device |
JPH07201920A (en) * | 1994-01-06 | 1995-08-04 | Fujitsu Ltd | Manufacture of semiconductor device |
JPH07235566A (en) * | 1994-02-22 | 1995-09-05 | Nec Corp | Mounting structure of optical element |
JPH08204327A (en) * | 1995-01-20 | 1996-08-09 | Sony Corp | Mounting apparatus |
JPH1032225A (en) * | 1996-07-15 | 1998-02-03 | Toshiba Corp | Mounting of semiconductor chip and device therefor |
-
1997
- 1997-05-26 JP JP9134756A patent/JP2947220B2/en not_active Expired - Fee Related
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5645041A (en) * | 1979-09-21 | 1981-04-24 | Hitachi Ltd | Semiconductor integrated circuit device |
JPH06132353A (en) * | 1992-04-06 | 1994-05-13 | Mega Chips:Kk | Semiconductor device |
JPH07201920A (en) * | 1994-01-06 | 1995-08-04 | Fujitsu Ltd | Manufacture of semiconductor device |
JPH07235566A (en) * | 1994-02-22 | 1995-09-05 | Nec Corp | Mounting structure of optical element |
JPH08204327A (en) * | 1995-01-20 | 1996-08-09 | Sony Corp | Mounting apparatus |
JPH1032225A (en) * | 1996-07-15 | 1998-02-03 | Toshiba Corp | Mounting of semiconductor chip and device therefor |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100503223B1 (en) * | 2000-10-25 | 2005-07-25 | 마쯔시다덴기산교 가부시키가이샤 | Method for mounting electric components |
JP2010103541A (en) * | 2008-10-27 | 2010-05-06 | Asm Assembly Automation Ltd | Direct die bonding using heated bond head |
KR101214336B1 (en) | 2010-07-22 | 2012-12-24 | 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 | Thermal Compress Bonding |
Also Published As
Publication number | Publication date |
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JP2947220B2 (en) | 1999-09-13 |
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