JPH10325768A - Semiconductor pressure sensor - Google Patents

Semiconductor pressure sensor

Info

Publication number
JPH10325768A
JPH10325768A JP13465597A JP13465597A JPH10325768A JP H10325768 A JPH10325768 A JP H10325768A JP 13465597 A JP13465597 A JP 13465597A JP 13465597 A JP13465597 A JP 13465597A JP H10325768 A JPH10325768 A JP H10325768A
Authority
JP
Japan
Prior art keywords
pedestal
pressure sensor
package
semiconductor pressure
hole
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13465597A
Other languages
Japanese (ja)
Other versions
JP3307276B2 (en
Inventor
Hiroshi Saito
宏 齊藤
Tomohiro Inoue
智広 井上
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Electric Works Co Ltd
Original Assignee
Matsushita Electric Works Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Works Ltd filed Critical Matsushita Electric Works Ltd
Priority to JP13465597A priority Critical patent/JP3307276B2/en
Publication of JPH10325768A publication Critical patent/JPH10325768A/en
Application granted granted Critical
Publication of JP3307276B2 publication Critical patent/JP3307276B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Landscapes

  • Measuring Fluid Pressure (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor pressure sensor by which a pressure can be measured with good accuracy even when an external force or the like is applied to a package. SOLUTION: A sensor is constituted so as to be provided with a pressure sensor chip 1 in which a strain gage resistance whose resistance value is changed according to a pressure change is formed on a thin diaphragm 2, with a pedestal 6 which comprises a through hole 7 communicating with the diaphragm 2 and which supports the pressure sensor chip 6, with a package 8 which comprises an introduction hole 9 used to introduce a pressure, to be measured, into the through hole 7, to which the pedestal 6 is fixed and in which the pressure sensor chip 1 and the pedestal 6 are housed and with external terminals 5 which are connected electrically to the strain gage resistance 3 and which are derived to the outside of the package 8. In this case, a convex protrusion part 10 is formed at the package 8, and the pedestal 6 is supported by the protrusion part 10.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、ダイヤフラムを用
いて圧力検出を行う半導体圧力センサに関するものであ
る。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor pressure sensor for detecting pressure using a diaphragm.

【0002】[0002]

【従来の技術】図4は、従来の半導体圧力センサの概略
構成図である。1は圧力センサチップであり、薄肉のダ
イヤフラム2上に圧力変化に応じてその抵抗値が変化す
る歪みゲージ抵抗3が形成されている。歪みゲージ抵抗
3は、ワイヤ4により外部端子5と接続されている。
2. Description of the Related Art FIG. 4 is a schematic configuration diagram of a conventional semiconductor pressure sensor. Reference numeral 1 denotes a pressure sensor chip, and a strain gauge resistor 3 whose resistance value changes in accordance with a change in pressure is formed on a thin diaphragm 2. The strain gauge resistor 3 is connected to an external terminal 5 by a wire 4.

【0003】6はガラス等で形成される台座であり、圧
力センサチップ1と陽極接合等により接合され、圧力セ
ンサチップ1を支持している。台座6にはダイヤフラム
2に通じる貫通孔7が設けられている。
A pedestal 6 made of glass or the like is joined to the pressure sensor chip 1 by anodic bonding or the like, and supports the pressure sensor chip 1. The pedestal 6 is provided with a through-hole 7 communicating with the diaphragm 2.

【0004】8はパッケージであり、圧力センサチップ
1及び台座6を収納する。パッケージ8は貫通孔7に被
測定圧力を導入するための導入孔9を有している。
A package 8 houses the pressure sensor chip 1 and the pedestal 6. The package 8 has an introduction hole 9 for introducing a measured pressure into the through hole 7.

【0005】以上の構成の半導体圧力センサでは、被圧
力抵抗がパッケージ8の導入孔9から台座6の貫通孔7
介してダイヤフラム2に印加されると、ダイヤフラム2
が被測定圧力に応じて歪み、その歪みを歪みゲージ抵抗
3により電気的に検出することで被測定圧力を測定す
る。
In the semiconductor pressure sensor having the above-described structure, the pressure-receiving resistance is changed from the introduction hole 9 of the package 8 to the through hole 7 of the base 6.
Applied to the diaphragm 2 via the
Is measured in accordance with the measured pressure, and the strain is electrically detected by the strain gauge resistor 3 to measure the measured pressure.

【0006】[0006]

【発明が解決しようとする課題】ところが、上述のよう
な構成の半導体圧力センサでは、パッケージ8に外力等
が印加されるとダイヤフラム2にこの外力による歪みが
発生し、正確な圧力測定が行えないという問題があっ
た。
However, in the semiconductor pressure sensor having the above-described structure, when an external force or the like is applied to the package 8, the diaphragm 2 is distorted by the external force, so that accurate pressure measurement cannot be performed. There was a problem.

【0007】本発明は、上記の点に鑑みて成されたもの
であり、その目的とするところは、パッケージに外力等
が印加されたとしても精度よく圧力測定が可能な半導体
圧力センサを提供することにある。
The present invention has been made in view of the above points, and an object of the present invention is to provide a semiconductor pressure sensor capable of accurately measuring pressure even when an external force or the like is applied to a package. It is in.

【0008】[0008]

【課題を解決するための手段】請求項1記載の発明は、
圧力変化に応じてその抵抗値が変化する歪みゲージ抵抗
を薄肉のダイヤフラム上に形成して成る圧力センサチッ
プと、前記ダイヤフラムに通じる貫通孔を有し前記圧力
センサチップを支持する台座と、前記貫通孔に被測定圧
力を導入するための導入孔を有するとともに前記台座が
固定され前記圧力センサチップ及び前記台座を収納する
パッケージと、前記歪みゲージ抵抗と電気的に接続され
前記パッケージの外部に引き出される外部端子とを有し
て成る半導体圧力センサにおいて、前記パッケージに凸
状の突起部を設け、前記突起部により前記台座を支持す
るようにしたことを特徴とするものである。
According to the first aspect of the present invention,
A pressure sensor chip formed on a thin diaphragm having a strain gauge resistance whose resistance value changes in accordance with a pressure change, a pedestal having a through hole communicating with the diaphragm and supporting the pressure sensor chip; A package having an introduction hole for introducing a pressure to be measured into the hole, the pedestal being fixed, and containing the pressure sensor chip and the pedestal; being electrically connected to the strain gauge resistor and being drawn out of the package; In a semiconductor pressure sensor having an external terminal, a convex projection is provided on the package, and the pedestal is supported by the projection.

【0009】請求項2記載の発明は、請求項1記載の半
導体圧力センサにおいて、前記突起部と前記台座とを接
着するようにしたことを特徴とするものである。
According to a second aspect of the present invention, in the semiconductor pressure sensor according to the first aspect, the projection and the pedestal are bonded to each other.

【0010】請求項3記載の発明は、請求項1記載の半
導体圧力センサにおいて、前記パッケージに前記台座を
囲む側壁部を設け、前記側壁部と前記台座とを接着する
ようにしたことを特徴とするものである。
According to a third aspect of the present invention, in the semiconductor pressure sensor according to the first aspect, a side wall portion surrounding the pedestal is provided on the package, and the side wall portion and the pedestal are bonded. Is what you do.

【0011】請求項4記載の発明は、請求項1記載の半
導体圧力センサにおいて、前記導入孔の中心に向かって
高くなるように前記突起部を設け、前記突起部と前記台
座とを接着するようにしたことを特徴とするものであ
る。
According to a fourth aspect of the present invention, in the semiconductor pressure sensor according to the first aspect, the projection is provided so as to be higher toward the center of the introduction hole, and the projection and the pedestal are bonded. It is characterized by having made it.

【0012】[0012]

【発明の実施の形態】以下、本発明の一実施形態につい
て図面に基づき説明する。図1は、本発明の一実施形態
に係る半導体圧力センサの概略構成図である。1は圧力
センサチップであり、薄肉のダイヤフラム2上に圧力変
化に応じてその抵抗値が変化する歪みゲージ抵抗3が形
成されている。歪みゲージ抵抗3は、ワイヤ4により外
部端子5と接続されている。外部端子5の素材は、銅や
コバール、ステンレスばね鋼、42合金等であり、耐湿
性や酸化防止の観点から表面に金・銀等のめっきを施し
てあることが望ましい。
DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment of the present invention will be described below with reference to the drawings. FIG. 1 is a schematic configuration diagram of a semiconductor pressure sensor according to one embodiment of the present invention. Reference numeral 1 denotes a pressure sensor chip, and a strain gauge resistor 3 whose resistance value changes in accordance with a change in pressure is formed on a thin diaphragm 2. The strain gauge resistor 3 is connected to an external terminal 5 by a wire 4. The material of the external terminal 5 is copper, Kovar, stainless spring steel, 42 alloy, or the like, and it is desirable that the surface is plated with gold, silver, or the like from the viewpoint of moisture resistance and oxidation prevention.

【0013】6はガラス等で形成される台座であり、圧
力センサチップ1と陽極接合等により接合され、圧力セ
ンサチップ1を支持している。台座6にはダイヤフラム
2に通じる貫通孔7が設けられている。
Reference numeral 6 denotes a pedestal formed of glass or the like, which is joined to the pressure sensor chip 1 by anodic bonding or the like and supports the pressure sensor chip 1. The pedestal 6 is provided with a through-hole 7 communicating with the diaphragm 2.

【0014】8はプラスチック等により形成されたパッ
ケージであり、圧力センサチップ1及び台座6を収納す
る。パッケージ8は貫通孔7に被測定圧力を導入するた
めの導入孔9を有している。
Reference numeral 8 denotes a package formed of plastic or the like, which houses the pressure sensor chip 1 and the pedestal 6. The package 8 has an introduction hole 9 for introducing a measured pressure into the through hole 7.

【0015】10はパッケージ8の台座6が設置される
部分を山形に加工することにより形成した凸状の突起部
であり、突起部10の先端には接着剤11により台座6
が固定されている。その際、貫通孔7と導入孔9との間
から被測定圧力の漏れがないように台座6とパッケージ
8を接着している。
Reference numeral 10 denotes a convex protrusion formed by processing a portion of the package 8 on which the pedestal 6 is installed into a mountain shape.
Has been fixed. At this time, the pedestal 6 and the package 8 are bonded so that the measured pressure does not leak from between the through hole 7 and the introduction hole 9.

【0016】本実施形態によれば、パッケージ8を加工
することにより形成した凸状の突起部10により台座6
を支持するため、台座6とパッケージ8との接触面積を
従来の半導体圧力センサに比べて小さくすることができ
るので、パッケージ8から台座6に伝播される外力を小
さくすることが可能となる。また、突起部10が撓むこ
とにより、その外力をさらに小さくすることが可能とな
る。
According to the present embodiment, the pedestal 6 is formed by the convex protrusion 10 formed by processing the package 8.
Therefore, the contact area between the pedestal 6 and the package 8 can be made smaller than that of a conventional semiconductor pressure sensor, so that the external force transmitted from the package 8 to the pedestal 6 can be reduced. In addition, when the protrusion 10 is bent, the external force can be further reduced.

【0017】図2は、本発明の他の実施形態に係る半導
体圧力センサの概略構成図である。本実施形態では、図
1に示した半導体圧力センサのようにパッケージ8に突
起部10を設けているが、台座6と突起部10とを接着
剤11によって接合せず、パッケージ8を加工すること
により側壁部12を設け、この側壁部12と台座6とを
接着剤11により接着している。これにより、台座6を
パッケージ8に固定するとともに、貫通孔7と導入孔9
との間から被測定圧力が漏れることを防止している。
FIG. 2 is a schematic configuration diagram of a semiconductor pressure sensor according to another embodiment of the present invention. In the present embodiment, the projection 8 is provided on the package 8 as in the semiconductor pressure sensor shown in FIG. 1, but the package 8 is processed without bonding the pedestal 6 and the projection 10 with the adhesive 11. The side wall part 12 is provided by the adhesive agent 11 and the side wall part 12 and the pedestal 6 are adhered by the adhesive 11. Thereby, the pedestal 6 is fixed to the package 8, and the through hole 7 and the introduction hole 9
To prevent the measured pressure from leaking from between

【0018】本実施形態によれば、凸状の突起部10に
より台座6を支持するため、台座6とパッケージ8との
接触面積を従来の半導体圧力センサに比べて小さくする
ことが可能となり、パッケージ8から台座6に伝播され
る外力を小さくすることができる。また、台座6と突起
部10とが接着されていないので、台座6と突起部10
との間に滑りが発生し、側壁部12が撓むことにより、
その外力をさらに小さくすることが可能となる。
According to the present embodiment, since the pedestal 6 is supported by the protruding projections 10, the contact area between the pedestal 6 and the package 8 can be reduced as compared with the conventional semiconductor pressure sensor. External force transmitted from the base 8 to the pedestal 6 can be reduced. Further, since the pedestal 6 and the projection 10 are not bonded, the pedestal 6 and the projection 10 are not bonded.
And the side wall 12 is bent,
The external force can be further reduced.

【0019】図3は、本発明の他の実施形態に係る半導
体圧力センサの概略構成図である。本実施形態では、パ
ッケージ8の台座6が接着される部分を導入孔9の中心
に近づくほど高さが高くなるように加工した突起部10
aを設け、導入孔9の中心から遠ざかるほど厚みが増す
ように接着剤11を塗布し、突起部10aの先端により
台座6を支持するように台座6をパッケージ8に接着し
ている。
FIG. 3 is a schematic configuration diagram of a semiconductor pressure sensor according to another embodiment of the present invention. In this embodiment, the protrusion 10 is formed by processing the portion of the package 8 to which the pedestal 6 is bonded so that the height increases as the center of the introduction hole 9 approaches.
The adhesive 11 is applied so that the thickness increases as the distance from the center of the introduction hole 9 increases, and the pedestal 6 is bonded to the package 8 such that the pedestal 6 is supported by the tip of the protrusion 10a.

【0020】本実施形態によれば、凸状の突起部10a
により台座6を支持するため、台座6とパッケージ8と
の接触面積を従来の半導体圧力センサに比べて小さくす
ることができるので、パッケージ8から台座6に伝播さ
れる外力を小さくすることができる。また、パッケージ
8から台座6に伝播する外力を接着剤11の弾性により
吸収することが可能となる。さらに、台座6とパッケー
ジ8に形成した突起部10aの頂部とを接触するように
接着するため、突起部10aの高さを調節することによ
り接着剤11の厚みの制御を容易に行うことができる。
According to the present embodiment, the convex protrusion 10a
As a result, the contact area between the pedestal 6 and the package 8 can be made smaller than that of a conventional semiconductor pressure sensor, so that the external force transmitted from the package 8 to the pedestal 6 can be reduced. Further, the external force propagating from the package 8 to the pedestal 6 can be absorbed by the elasticity of the adhesive 11. Furthermore, since the pedestal 6 and the top of the protrusion 10a formed on the package 8 are bonded so as to be in contact with each other, the thickness of the adhesive 11 can be easily controlled by adjusting the height of the protrusion 10a. .

【0021】[0021]

【発明の効果】以上のように、請求項1記載の発明にあ
っては、圧力変化に応じてその抵抗値が変化する歪みゲ
ージ抵抗を薄肉のダイヤフラム上に形成して成る圧力セ
ンサチップと、ダイヤフラムに通じる貫通孔を有し圧力
センサチップを支持する台座と、貫通孔に被測定圧力を
導入するための導入孔を有するとともに台座が固定され
圧力センサチップ及び台座を収納するパッケージと、歪
みゲージ抵抗と電気的に接続されパッケージの外部に引
き出される外部端子とを有して成る半導体圧力センサに
おいて、パッケージに凸状の突起部を設け、突起部によ
り台座を支持するようにしたので、台座とパッケージと
の接触面積を従来の半導体圧力センサに比べて小さくす
ることができ、パッケージから台座に伝播される外力を
小さくすることが可能となるので、パッケージに外力等
が印加されたとしても精度よく圧力測定が可能な半導体
圧力センサを提供することができた。
As described above, according to the first aspect of the present invention, there is provided a pressure sensor chip formed on a thin diaphragm with a strain gauge resistor whose resistance value changes according to a pressure change. A pedestal having a through hole communicating with the diaphragm and supporting the pressure sensor chip, a package having an introduction hole for introducing a measured pressure into the through hole, the pedestal being fixed and accommodating the pressure sensor chip and the pedestal, and a strain gauge In a semiconductor pressure sensor having an external terminal electrically connected to a resistor and drawn out of the package, a convex projection is provided on the package, and the pedestal is supported by the projection. The contact area with the package can be reduced compared to the conventional semiconductor pressure sensor, and the external force transmitted from the package to the base can be reduced. Since the ability to be able to provide a semiconductor pressure sensor capable accurately pressure measurement as an external force or the like is applied to the package.

【0022】請求項2記載の発明にあっては、請求項1
記載の発明において、突起部と台座とを接着するように
したので、突起部が撓むことにより、パッケージから台
座に伝播される外力をさらに小さくすることが可能とな
る。
According to the second aspect of the present invention, a first aspect is provided.
In the described invention, since the projection and the pedestal are bonded, the external force transmitted from the package to the pedestal can be further reduced by bending the projection.

【0023】請求項3記載の発明にあっては、請求項1
記載の発明において、パッケージに台座を囲む側壁部を
設け、側壁部と台座とを接着するようにしたので、凸状
の突起部により台座を支持するため、台座6とパッケー
ジ8との接触面積を従来の半導体圧力センサに比べて小
さくすることが可能となるとともに、台座と突起部とが
接着されておらず、台座と突起部との間に滑りが発生
し、側壁部が撓むことにより、パッケージから台座に伝
播される外力をさらに小さくすることが可能となる。
According to the third aspect of the present invention, the first aspect is provided.
In the described invention, the side wall surrounding the pedestal is provided on the package, and the side wall and the pedestal are bonded to each other. In addition to being able to be smaller than the conventional semiconductor pressure sensor, the pedestal and the projection are not bonded, and a slip occurs between the pedestal and the projection, and the side wall is bent, External force transmitted from the package to the pedestal can be further reduced.

【0024】請求項4記載の発明にあっては、請求項1
記載の発明において、導入孔の中心に向かって高くなる
ように突起部を設け、突起部と台座とを接着するように
したので、台座とパッケージとの接触面積を従来の半導
体圧力センサに比べて小さくすることができるととも
に、パッケージから台座に伝播する外力を接着剤の弾性
により吸収することが可能となる。また、台座とパッケ
ージに形成した突起部の頂部とを接触するように接着す
るため、突起部の高さを調節することにより接着剤の厚
みの制御を容易に行うことができる。
According to the fourth aspect of the present invention, there is provided the first aspect.
In the described invention, the protrusion is provided so as to be higher toward the center of the introduction hole, and the protrusion and the pedestal are bonded, so that the contact area between the pedestal and the package is smaller than that of the conventional semiconductor pressure sensor. It is possible to reduce the size and to absorb the external force propagating from the package to the pedestal by the elasticity of the adhesive. Further, since the pedestal and the top of the protrusion formed on the package are bonded so as to be in contact with each other, the thickness of the adhesive can be easily controlled by adjusting the height of the protrusion.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の一実施形態に係る半導体圧力センサの
概略構成図である。
FIG. 1 is a schematic configuration diagram of a semiconductor pressure sensor according to an embodiment of the present invention.

【図2】本発明の他の実施形態に係る半導体圧力センサ
の概略構成図である。
FIG. 2 is a schematic configuration diagram of a semiconductor pressure sensor according to another embodiment of the present invention.

【図3】本発明の他の実施形態に係る半導体圧力センサ
の概略構成図である。
FIG. 3 is a schematic configuration diagram of a semiconductor pressure sensor according to another embodiment of the present invention.

【図4】従来の半導体圧力センサの概略構成図である。FIG. 4 is a schematic configuration diagram of a conventional semiconductor pressure sensor.

【符号の説明】 1 圧力センサチップ 2 ダイヤフラム 3 歪みゲージ抵抗 4 ワイヤ 5 外部端子 6 台座 7 貫通孔 8 パッケージ 9 導入孔 10 突起部 11 接着剤 12 側壁部[Description of Signs] 1 Pressure sensor chip 2 Diaphragm 3 Strain gauge resistance 4 Wire 5 External terminal 6 Pedestal 7 Through hole 8 Package 9 Introducing hole 10 Protrusion 11 Adhesive 12 Side wall

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】 圧力変化に応じてその抵抗値が変化する
歪みゲージ抵抗を薄肉のダイヤフラム上に形成して成る
圧力センサチップと、前記ダイヤフラムに通じる貫通孔
を有し前記圧力センサチップを支持する台座と、前記貫
通孔に被測定圧力を導入するための導入孔を有するとと
もに前記台座が固定され前記圧力センサチップ及び前記
台座を収納するパッケージと、前記歪みゲージ抵抗と電
気的に接続され前記パッケージの外部に引き出される外
部端子とを有して成る半導体圧力センサにおいて、前記
パッケージに凸状の突起部を設け、前記突起部により前
記台座を支持するようにしたことを特徴とする半導体圧
力センサ。
1. A pressure sensor chip formed by forming a strain gauge resistor whose resistance value changes according to a pressure change on a thin diaphragm, and a through hole communicating with the diaphragm to support the pressure sensor chip. A pedestal, a package having an introduction hole for introducing a pressure to be measured into the through-hole, the pedestal being fixed, and containing the pressure sensor chip and the pedestal; and a package electrically connected to the strain gauge resistor. A semiconductor pressure sensor having an external terminal drawn out of the semiconductor pressure sensor, wherein a convex projection is provided on the package, and the pedestal is supported by the projection.
【請求項2】 前記突起部と前記台座とを接着するよう
にしたことを特徴とする請求項1記載の半導体圧力セン
サ。
2. The semiconductor pressure sensor according to claim 1, wherein the projection and the pedestal are bonded to each other.
【請求項3】 前記パッケージに前記台座を囲む側壁部
を設け、前記側壁部と前記台座とを接着するようにした
ことを特徴とする請求項1記載の半導体圧力センサ。
3. The semiconductor pressure sensor according to claim 1, wherein a side wall surrounding the pedestal is provided on the package, and the side wall and the pedestal are bonded to each other.
【請求項4】 前記導入孔の中心に向かって高くなるよ
うに前記突起部を設け、前記突起部と前記台座とを接着
するようにしたことを特徴とする請求項1記載の半導体
圧力センサ。
4. The semiconductor pressure sensor according to claim 1, wherein the protrusion is provided so as to be higher toward the center of the introduction hole, and the protrusion and the pedestal are bonded.
JP13465597A 1997-05-26 1997-05-26 Semiconductor pressure sensor Expired - Fee Related JP3307276B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13465597A JP3307276B2 (en) 1997-05-26 1997-05-26 Semiconductor pressure sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13465597A JP3307276B2 (en) 1997-05-26 1997-05-26 Semiconductor pressure sensor

Publications (2)

Publication Number Publication Date
JPH10325768A true JPH10325768A (en) 1998-12-08
JP3307276B2 JP3307276B2 (en) 2002-07-24

Family

ID=15133462

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13465597A Expired - Fee Related JP3307276B2 (en) 1997-05-26 1997-05-26 Semiconductor pressure sensor

Country Status (1)

Country Link
JP (1) JP3307276B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8191432B2 (en) 2009-03-11 2012-06-05 Denso Corporation Load detecting device including a load detecting element between a substrate and a load receiver and method of producing the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8191432B2 (en) 2009-03-11 2012-06-05 Denso Corporation Load detecting device including a load detecting element between a substrate and a load receiver and method of producing the same

Also Published As

Publication number Publication date
JP3307276B2 (en) 2002-07-24

Similar Documents

Publication Publication Date Title
CN107445133B (en) Compact load cell device with low sensitivity to thermo-mechanical package stress
US10549982B2 (en) Pressure sensor encapsulated in elastomeric material, and system including the pressure sensor
JP2656566B2 (en) Semiconductor pressure transducer
US6047604A (en) Pressure sensor component for mounting on the component-mounting surface of a printed circuit board
US5604363A (en) Semiconductor pressure sensor with package
US6058020A (en) Component housing for surface mounting of a semiconductor component
US6755081B2 (en) Acceleration sensor
JPH10325768A (en) Semiconductor pressure sensor
JPH0933371A (en) Semiconductor pressure gauge
JP3307268B2 (en) Semiconductor pressure sensor
KR102382142B1 (en) Pressure Sensor Package Using One Mold Package
CN218444226U (en) Pressure sensor and pressure sensor packaging structure
JP3307275B2 (en) Semiconductor pressure sensor
JP3307274B2 (en) Semiconductor pressure sensor
JPH10185946A (en) Capacitance type sensor
JPH10325769A (en) Semiconductor pressure sensor
JPH07280679A (en) Pressure sensor
JP3307281B2 (en) Semiconductor pressure sensor
JPH04329328A (en) Contact pressure sensor and its measurement method
JPH10325771A (en) Semiconductor pressure sensor
JP2001160626A (en) Semiconductor acceleration sensor
CN114113680B (en) Piezoelectric film acceleration sensor
JP3158354B2 (en) Pressure detector
JPH08226861A (en) Pressure sensor and its mounting structure
JP3310184B2 (en) Acceleration sensor

Legal Events

Date Code Title Description
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20020416

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20080517

Year of fee payment: 6

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20090517

Year of fee payment: 7

S533 Written request for registration of change of name

Free format text: JAPANESE INTERMEDIATE CODE: R313533

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20090517

Year of fee payment: 7

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100517

Year of fee payment: 8

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100517

Year of fee payment: 8

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110517

Year of fee payment: 9

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120517

Year of fee payment: 10

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120517

Year of fee payment: 10

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130517

Year of fee payment: 11

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130517

Year of fee payment: 11

LAPS Cancellation because of no payment of annual fees