JPH1032386A - Production of thin film multilayer board and pattern inspection system - Google Patents

Abstract

PROBLEM TO BE SOLVED: To produce a thin film multilayer wiring board having a large area at high yield. SOLUTION: A new layer, including an insulation layer 102a and a wiring later 104a, is inspected every time when it is formed and defects are corrected. A next layer is then formed under a defect-free state thus increasing the production yield. The ratio of the quantity of light between the illumination angles is optimized for each inspection process and then the pattern is detected thus inspecting the entire process.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a thin film multilayer wiring board and a pattern inspection apparatus.

[0002]

2. Description of the Related Art A technique for manufacturing a thin film multilayer wiring board, particularly a pattern inspection technique for a thin film wiring is disclosed in Japanese Unexamined Patent Publication No.
02395. According to this, each time a wiring pattern is formed in the manufacturing process, the most recently formed wiring pattern is detected, the presence or absence of a defect in the wiring pattern is inspected, the defective portion is corrected, and then the wiring of the next layer is formed. Form a pattern. Wiring pattern inspection techniques include, for example, illuminating the inspection target from one direction and detecting specularly reflected light and scattered light of a certain limited wavelength, thereby optically revealing the wiring pattern and inspecting the wiring pattern for defects. Techniques are shown. In addition, the inspection object is illuminated from multiple directions, reflected light of a certain limited wavelength is detected, and the wiring pattern is inspected.Or, the inspection object is illuminated with linearly polarized light, and a polarization component orthogonal to the polarization direction of the illumination light. And a technique for inspecting the wiring pattern, and a technique for detecting the fluorescent light generated by the inspection target and inspecting the wiring pattern.

[0003]

In the technique of manufacturing a thin-film multilayer wiring board, the most recently formed wiring pattern is inspected each time a wiring pattern is formed, and a wiring pattern defect detected by this inspection is corrected. We manufacture substrates. However, the inspection and repair of the insulating film that insulates the layers of the wiring pattern is not performed. Therefore, during the manufacturing process,
When a defect occurs in an insulating film that insulates between layers of a wiring pattern, a short circuit failure or the like may occur, and the completed thin-film multilayer wiring board may be defective.

Further, the thin-film wiring pattern inspection technology can effectively inspect only a thin-film multilayer wiring substrate having a specific structure, and may not be able to be inspected depending on an inspection target process. For example, a technique for detecting and inspecting fluorescence is effective only when a material that emits fluorescence is used. If inspection is performed every time a wiring pattern is formed in a manufacturing process of a thin-film multilayer wiring board, the inspection process covers a plurality of processes. For this reason, it is difficult to inspect all the inspection processes using one of the thin film wiring pattern inspection technologies, and it is necessary to use a plurality of inspection technologies for each of the excellent inspection processes. That is, a plurality of inspection devices having different inspection methods are required. Further, when the manufacturing process of the thin film multilayer wiring board is changed, the inspection cannot be performed by the inspection apparatus used so far, and a new inspection apparatus may be required.

An object of the present invention is to provide a manufacturing method for improving the manufacturing yield of a thin film multilayer wiring board.

Another object of the present invention is to provide an automatic appearance inspection apparatus for a thin film multilayer wiring board.

[0007]

A thin-film multilayer wiring board is manufactured by alternately stacking insulating layers and wiring layers on a ceramic substrate. Each of the insulating layer and the wiring layer is formed by a lithography technique in which, for example, a resist is applied, exposed and developed, and then patterned by etching. The present invention provides that after each layer is formed, the most recently formed layer is inspected and, if defective, corrected,
The yield is improved by a manufacturing method of forming a next layer thereon. When forming a new layer irrespective of the insulating layer and the wiring layer, first, the resist pattern after exposure and development is inspected, and after the resist defect detected by this inspection is corrected, etching is performed. Next, a pattern inspection of the etched insulating layer or wiring layer is performed,
The defect detected by this inspection is corrected. In this way, a non-defective thin-film multilayer wiring board is manufactured by forming the next layer in a state where defects are eliminated.

In order to realize this manufacturing method, an automatic appearance inspection apparatus for inspecting a resist pattern, a wiring pattern, and an insulating layer pattern is required. In order to inspect in multiple inspection processes with different materials, surface conditions, and structures, the thin-film multilayer wiring board is illuminated from multiple directions, and the amount of illumination from each direction is adjusted to the optimal value for each inspection process Then, adjust the illumination wavelength range to the optimal value for each inspection process, detect light in a certain wavelength range among the reflected light from the thin-film multilayer wiring board, and adjust the detected wavelength range to the optimal value for each inspection process. The pattern is detected by the adjusting means. Using this detection optical system, the most recently formed layer is optically revealed and detected. At this time, the illumination light source is housed in a separate housing from the detection optical system in order to keep the detection optical system at a constant temperature and prevent the lens from defocusing. The image signal detected in this manner is converted into an A / D signal.
After converting it to a digital image signal, perform image processing,
Detect pattern defects. In image processing, defect candidates are detected at high speed by hardware processing based on logic realized by an electric circuit, and then the defect candidates are subjected to optimal image processing for each inspection process by software processing by a computer, and true processing is performed. Extract defects. As described above, by realizing the optimum pattern detection method and defect extraction processing method for each inspection process, the inspection of the thin-film multilayer wiring board can be performed by one automatic inspection apparatus.

[0009]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment of a method for manufacturing a thin film multilayer wiring board according to the present invention will be described with reference to FIG. The multilayer ceramic substrate 100 has copper pads 101 on its surface. In step (a), an insulating film 102a of a polyimide resin is applied on the multilayer ceramic substrate 100. In step 2,
A photoresist 103 is applied, exposed and developed. next,
The patterned photoresist 103 is inspected, and the presence or absence of a defect and the location of the defect are output. In step (c), the defective portion is corrected based on the result. For example, a surplus defect in a photoresist is irradiated with a laser beam to skip a surplus portion. Chipping of the photoresist and pin poles apply a small amount of resin locally. When the number of defects is large, the photoresist may be peeled off, and the process may return to step (b) to re-pattern the photoresist. In the step (d), the insulating film 102a is etched using a photoresist as a mask to form a through hole 1 for making a connection with the pad 101.
02b is formed. In step (e), after the photoresist is removed, the insulating film is baked. Next, the insulating film 102c is inspected, and the presence or absence of a defect and the location of the defect are output. In step (f), the defective portion is corrected based on the result. For example, when a through hole is not opened in the insulating film, a laser beam is irradiated to form the through hole. Chipping of the insulating film and pin poles apply a small amount of resin locally. When the number of defects is large, it is conceivable to peel off the insulating film, return to step (a), and form the insulating film again. As described above, one insulating layer is completed in steps (a) to (f).

Next, in a step (g), the metal film 1 serving as a wiring is formed.
04a is formed. For example, chromium, copper, and chromium are continuously formed by sputtering, and three metal films are used as wiring.
In a step (h), a photoresist 105 is applied, exposed and developed. Next, the patterned photoresist 105
Is inspected, and the presence or absence of a defect and the location of the defect are output. In step (i), the defective portion is corrected based on the result. For example, a surplus defect in a photoresist is irradiated with a laser beam to skip a surplus portion. Chipping of the photoresist and pin poles apply a small amount of resin locally. If the number of defects is large, the photoresist may be peeled off, and the process may return to the step (h) to re-pattern the photoresist. In step (j), the metal film 104a is formed using a photoresist as a mask.
Is etched to form a wiring pattern 104b. In step (k), the photoresist is stripped. In step (l),
The metal film 104b is inspected, and the presence or absence of a defect and the location of the defect are output. In step (l), the defective portion is corrected based on the result. For example, a surplus defect in a metal film is irradiated with laser light to skip a surplus portion. As described above, one wiring layer is completed in steps (g) to (l).

Thereafter, steps (a) to (f) and steps (g) to (l) are repeated to form a multilayer insulating layer and a wiring layer, thereby completing a thin film multilayer wiring board.

According to this embodiment, the insulating layer and the wiring layer free of defects can be laminated, so that the production yield can be increased.

One embodiment of a system for manufacturing a thin film multilayer wiring board will be described with reference to FIG. The manufacturing system includes a visual inspection device 201, a laser cut correction device 202, a local coating correction device 203, an exposure device 210, a developing device 211, a film forming device 212, an etching device 213, a coating device 214, a baking furnace 215, a peeling device 216, and the like. Consists of Using these apparatuses, a thin film multilayer wiring board is manufactured according to the manufacturing process shown in FIG. Appearance inspection device 201, laser cut correction device 202, local coating correction device 203,
Appearance inspection device 2 connected to network 205
01 is the inspection result data of the laser cut correction device 202,
It is transferred to the local application correction device 203. The defective part is corrected according to the transferred data. The inspection result data is managed by the host computer 204.

According to this embodiment, the inspection device and the repair device are connected online, and the inspection result of the inspection device can be transferred to the repair device, so that the efficiency of the repair work is improved.

FIG. 3 shows the overall configuration of an appearance inspection apparatus for a thin film multilayer wiring board. The thin film multilayer wiring board 301 to be inspected is chucked by the work holder 302,
Mounted on the XYZθ stage 303. XYZθ stage 303 is driven by controller 304. The movement is commanded by the computer 305, and the command is transmitted to the controller 304 via the bus 306.

The illumination is a combined illumination of oblique illumination and epi-illumination from all around by the multiple ring light guide 310.
The multiple ring light guide guides light from the light source group 311 to the thin-film multilayer substrate 301 and illuminates the thin-film multilayer substrate obliquely from the entire circumference. The epi-illumination includes a light source 312, a condenser lens 313, a half mirror 314, and an objective lens 3.
15 is realized. Light from the light source is guided to a half mirror via a condenser lens, and the thin film multilayer substrate is illuminated through an objective lens.

Light reflected from the thin-film multilayer substrate 301 is transmitted to a linear sensor 317 by an objective lens 315 and an imaging lens 316.
An image is formed thereon and an image is detected. A filter 318 is inserted in the optical path to limit the detection wavelength. The two-dimensional image signal is detected by synchronizing the scanning of the XYZθ stage 303 with the driving of the linear sensor.

The image signal is converted into a digital signal by an A / D converter 320, subjected to a dark level correction, a stage speed fluctuation correction, a shading correction and the like by a preprocessing circuit 321, and a binary image signal is outputted by a binarization circuit 322. Becomes The binary image is processed by the defect detection circuit 323 to detect a defect. The presence or absence of the defect and the position of the defect are output to the computer 305 via the bus 306.

Hereinafter, details of each element of the visual inspection apparatus will be described.

First, the configuration of the detection optical system is shown in FIG. 6
The heavy ring light guide 401 is a thin-film multilayer wiring board 30.
1 is an optical fiber light guide that illuminates the entire circumference and from six angles in the height direction. Light emitting portions 402a, 402b, 402c, 402 arranged in a ring shape
The illumination angles α of d, 402e and 402f are respectively 1
6 °, 28 °, 40 °, 51.5 °, 63 °, 74.5
°. The light emitting section 402a is connected to the lamp house 403a by an optical fiber, and 402b is connected to the lamp house 403a.
b, 402c and 402d become 403c, 402e and 4
02f is connected to 403d.

The lamp houses 403a to 403d include an electric mechanical diaphragm 404 for adjusting the amount of light, a shutter 405 for opening and closing an optical path, a filter 406 for limiting an illumination wavelength, a lamp 407 for generating light, and a light for emitting light to a fiber end. An elliptical mirror 408 for condensing light is incorporated. As the lamp 407, a mercury lamp or a water source xenon lamp is used. The electric mechanical diaphragm 404 and the shutter 405 are described first in FIG.
Is controlled according to the command of the computer 305 shown in FIG. Since the light intensity of the four lamp houses can be controlled independently, the illumination light intensity for each angle of the six-ring light guide can be adjusted. That is, 16 ° is referred to as an upper stage 1, 28 ° is referred to as an upper stage 2, 40 ° and 51.5 ° are jointly referred to as a middle stage, and 61.5 ° and 74.5 ° are jointly referred to as a lower stage. The light amount balance of the upper stage 1, the upper stage 2, the middle stage, and the lower stage can be freely set. In this embodiment, four lamp houses are used. However, if six lamp houses are used, the illumination balance at all six angles can be adjusted.

The fiber length of the six ring light guide is increased to several meters, and the lamp house 403 is mounted on the light source housing 409.
Implement in Since the lamp house generates considerable heat, the total amount of heat becomes enormous as the number of lamp houses increases.
The lens used for the detection optical system, particularly the objective lens, is sensitive to a temperature change, and the focal length changes. For this reason, if the lamp house is mounted in the same housing as the detection optical system, the temperature of the detection optical system changes due to the waste heat of the lamp house, and the focal position moves and the focus becomes out of focus. To prevent this, the lamp house is mounted on a light source housing different from the housing in which the detection optical system is housed.

The epi-illumination is Koehler illumination. Lamp 4
After the light generated in 10 is once converted into parallel light by the condenser lens 411, the light is relayed through the relay lenses 413 and 414.
The optical path is bent 90 degrees by the half mirror 415, and the objective lens 4 is bent.
Illuminate through 16. An electric turret 412 incorporating various filters 421 is disposed at a place where the light is parallel light between the condenser lens and the relay lens. The electric turret is controlled according to a command from the computer 305 shown in FIG. 3, and the built-in filter 421 can be freely selected. By incorporating a light shielding plate as a filter, the function of a shutter can also be realized. When the ND filter is built in, the illumination light amount can be controlled. At this time, it is preferable to increase the number of electric turrets so that a plurality of filters are simultaneously inserted into the optical path.

The objective lens 416 is desirably of the infinity correction type, and is used in combination with the imaging lens 417. The magnification is determined according to the minimum defect size to be detected. For example, if the minimum line width of the thin film wiring to be inspected is about 30 μm,
Use a double objective lens. When a plurality of imaging lenses having different magnifications are prepared and mounted on an electric turret, the size of a detection pixel can be freely selected. 1.3 × imaging lens 417a
And an imaging lens 417 b of 0.87 times and an imaging lens 417 c of 0.65 times are mounted on the electric turret 418. When the line sensor 419 having a pixel pitch of 13μ is used, the detection pixel dimensions are 2μ, 3μ, and 4μ, respectively. Line sensors include TDI (Time Delay &
Integration) line sensors are preferred,
Very bright images are obtained. Electric turret 418
Is controlled in accordance with the command of the computer 305 shown in FIG. 3, and the detection pixel size can be freely selected. An electric turret 420 incorporating various filters 422 is arranged at a place where the light is parallel light between the half mirror 415 and the imaging lens. The electric turret is the computer 305 shown in FIG.
Filter 422 which is controlled in accordance with the
Can be freely selected. For example, if a wavelength limiting filter is incorporated, the detection wavelength can be selected.

According to this embodiment, the light quantity can be adjusted for each illumination angle of the multiple ring light guide and the light quantity of the epi-illumination can be adjusted, so that an optimal light quantity balance can be realized for each inspection process. . Furthermore, since the detection wavelength can be switched, it is possible to detect an image at a wavelength that provides the best contrast for each inspection process. Further, since the detection pixel size can be changed, the inspection can be performed efficiently even if the pattern size is different in each inspection process, and the inspection time is shortened.

The fact that the six-ring light guide is effective in detecting a stepped pattern will be described with reference to FIG.
Consider a pattern 501 having a step with an inclination angle θ. Assuming that the illumination angle of the illumination light 502 of the ring light guide is α and the aperture angle of the objective lens 503 is φ, 90 ° −φ <2θ
The reflected light 504 satisfying the relationship of + α <90 ° + φ can be captured by the objective lens. For example, the numerical aperture NA =
Using an objective lens of 0.14 (opening angle φ = 8 °), 6
Lighting angle α of double ring light guide = 16 °, 28 °,
If the angles are 40 °, 51.5 °, 63 °, and 74.5 °, a step having an inclination angle θ from 0 ° to 41 ° can be detected together with epi-illumination.

The reason why it becomes necessary to optimize the light amount balance for each illumination angle of the multiple ring light guide in the inspection of the thin film multilayer wiring board for each inspection step will be described. FIG. 6 is a cross-sectional view of a thin-film multilayer wiring board in an inspection step. The multilayer ceramic substrate 601 has copper pads 60 on its surface.
There are two. The insulating layer 603 is a polyimide resin and has a through hole 610 formed on the pad 602. The wiring layer 604 is, for example, a three-layer metal film of chromium, copper, and chromium, and is also formed on the pad 602 through the through hole 610. In the insulating layer 605 formed on the wiring layer 604, a through hole 612 is formed, and a step 61 is formed by the edge of the wiring layer 604.
1 has occurred. The uppermost layer is the wiring layer 606. In the appearance inspection of the wiring layer 606, the wiring layer 606 and the insulating layer 60
5 need to be separated and detected. When the detection wavelength is limited to purple, the metal wiring layer can be detected bright, and the polyimide resin insulating layer 605 can be detected dark. However, if only the epi-illumination is used, the inclined portions formed by the through holes 610 and 612 are detected as dark, and the entire wiring layer 606 cannot be detected as bright. In order to detect the inclined portion brightly, oblique illumination by a multiple ring light guide is required. For illumination with multiple ring light guides, through holes 6
In addition to brightening the steps due to 10, 612, the steps 611 of the insulating layer 605 can be detected bright by the surface reflection of the polyimide-based insulating film. Through hole 610
Since the inclination angles of the through hole 612 and the step 611 are different from each other, the light amount balance of each illumination angle of the multiple ring light guide may be set so as to make the step formed by the through holes 610 and 612 bright and detect the step 611 dark. . Furthermore, since the inclination angle of the step to be made brighter and the inclination angle of the step to be made dark differ for each inspection process, it is necessary to optimize the light amount balance for each inspection process. This is shown in FIG.
Can be realized by the detection optical system shown in FIG.

The advantage of switching the detection wavelength for each inspection process will be described. FIG. 7 shows an example of spectral reflection characteristics of a material used for manufacturing a multilayer thin film wiring board. Two examples of the polyimide resin, one example of the resist, and three examples of the metal film are illustrated.
The metal film has a relatively high reflectance regardless of the wavelength, and the reflectance is constant.However, an organic material such as a polyimide resin or a resist has a high reflectance for a long wavelength and has a high reflectance for a short wavelength. Has low reflectance. Therefore, if a filter that selectively transmits a short wavelength is used, the metal film and the organic material can be separated and detected. Furthermore, if the spectral reflectances of the polyimide resin and the resist are closely examined, it is found that the wavelength at which the reflectance is minimized differs depending on the material. In order to maximize the detection contrast, detection should be performed at the wavelength having the minimum reflectance. Since the material differs depending on the inspection process, it is better to switch the detection wavelength for each inspection process. This can be realized by the detection optical system shown in FIG.

Next, the configuration of the defect determination processing system will be described with reference to FIG. The digital signal 801 from the preprocessing circuit 321 in FIG. 3 is binarized by the binarization circuit 802 and stored in the binary image memory 803. The binary image memory includes three memories 803a, 803b, 803c. Since the linear sensor 317 is used for image detection, the image for the first scan is stored in the memory 803a, the image for the next scan is stored in the memory 803b, and the image for the third scan is stored in the memory 803c. The images for the fourth scan are sequentially stored in the memory 803a. On the other hand, the magnetic disk device 805 stores a normal pattern shape in each inspection process in advance. At the start of the inspection, a normal pattern of the inspection process is stored in the binary image memory 804 from the magnetic disk device 805. The detected image is read from the binary image memory 803 and the normal pattern is read from the binary image memory 804, the images are aligned with each other by the alignment circuit 806, and the non-coincidence portion is output as a defect by the defect determination circuit 807. . The defect data is sent to the image processing computer 810 via the bus 808. Image processing computer 81
A value of 0 calls a detected image near the defect from the binary image memory 803 based on the defect data, and determines whether the defect is a true defect or a false report by image processing by software. Further, the size of the defect is also checked. Since there are three binary image memories 803, one is a binary circuit 80
2 is used for storing signals from the image processing computer 810, one is used for calling the alignment circuit 806, and the other is used for calling the image processing computer 810. The final defect data is sent from the image processing computer 810 to the control computer 809 and managed by the control computer.

According to this embodiment, a defect candidate is detected at high speed by hardware processing based on logic realized by an electric circuit.
After that, the defect candidate is subjected to optimal image processing for each inspection process by software processing by an electronic computer, and a true defect can be extracted.

[0031]

According to the present invention, in the manufacturing process of a thin film multilayer wiring board, each time a layer is formed, the most recently formed layer is inspected, defects are corrected, and then the next layer is formed. Therefore, there is no need to inspect and correct the lower layer that has already been inspected and corrected, and the yield can be improved.

Further, all the inspection steps can be inspected by one inspection apparatus, and it is not necessary to prepare different inspection apparatuses for each inspection step.

[Brief description of the drawings]

FIG. 1 is a sectional view showing one embodiment of a method for manufacturing a thin film multilayer wiring board according to the present invention.

FIG. 2 is a block diagram showing one embodiment of a system for manufacturing a thin-film multilayer wiring board according to the present invention.

FIG. 3 is a block diagram of a visual inspection device according to the present invention.

FIG. 4 is an explanatory diagram of a detection optical system of the visual inspection device according to the present invention.

FIG. 5 is an explanatory diagram showing that illumination by a multiple ring light guide is effective for detecting a pattern inclined portion.

FIG. 6 is a cross-sectional view of a thin-film multilayer wiring board in a certain step.

FIG. 7 is a characteristic diagram showing spectral reflectances of several kinds of materials.

FIG. 8 is a block diagram of a defect determination processing unit of the visual inspection device according to the present invention.

[Explanation of symbols]

100: multilayer ceramic substrate, 101: pad, 102
a: insulating film, 103: photoresist, 104a: metal film, 105: photoresist.

 ────────────────────────────────────────────────── ─── Continuing on the front page (72) Inventor Takanori Ninomiya 292, Yoshida-cho, Totsuka-ku, Yokohama-shi, Kanagawa Pref.

Claims (6)

[Claims] In a method of manufacturing a thin-film multilayer substrate in which an insulating layer and a wiring layer are sequentially laminated, each time the insulating layer or the wiring layer is formed, the most recently formed layer is optically detected and a pattern is formed. A method of manufacturing a thin-film multilayer substrate, comprising: inspecting for the presence or absence of a defect, and correcting the pattern defect based on position data of the defect detected by the inspection. 2. The step of optically detecting the most recently formed layer includes illuminating the thin-film multilayer substrate to be inspected from multiple directions, and determining an illumination light amount ratio from the multiple directions. In order to limit to the wavelength band where the difference between the reflectivity of the most recently formed layer and the reflectivity of the lower layer formed immediately before is changed for each inspection target layer according to the inclination angle of the layer step, 2. The method for manufacturing a thin film multilayer substrate according to claim 1, wherein a wavelength band defined for each layer is changed, and reflected light from the thin film multilayer substrate is detected from a specific direction. 3. A thin film for sequentially laminating an insulating layer for forming a pattern by etching after applying a resist, exposing and developing, and a wiring layer for forming a pattern by etching after applying the resist and exposing and developing. In the method of manufacturing a multilayer substrate, when forming a new layer regardless of the insulating layer and the wiring layer, the resist pattern after exposure and development is optically detected, and the most recently formed layer is optically detected. A method of manufacturing a thin-film multilayer substrate, comprising: inspecting the presence or absence of a defect in the resist pattern; and correcting the defect in the resist pattern based on position data of the defect detected by the inspection. 4. A method of manufacturing a thin-film multilayer substrate in which an insulating layer and a wiring layer are sequentially laminated, wherein the manufacturing step of forming the insulating layer includes optically detecting a resist patterned for etching the insulating layer. Then, the presence or absence of a defect in the pattern is inspected, and based on the position data of the defect detected by this inspection, after correcting the defect in the pattern, the insulating layer is etched, and the etched insulating layer is removed. Optically detect and inspect the pattern for defects
Based on the position data of the defect detected by this inspection,
It is characterized by correcting the defect of the pattern, the manufacturing process of forming the wiring layer optically detects a resist patterned to etch the wiring layer,
After inspecting the pattern for defects, correcting the pattern defects based on the position data of the defects detected by the inspection, etching the wiring layer, and optically detecting the etched wiring layer. A method for inspecting the presence or absence of a defect in a pattern, and correcting the defect in the pattern based on position data of the defect detected by the inspection. 5. A means for illuminating a thin-film multilayer substrate to be inspected from multiple directions, a control means for adjusting an illumination light amount ratio from multiple directions, a means for limiting a detection wavelength band, and a wavelength for limiting. A pattern inspection apparatus comprising: means for changing a band; means for detecting reflected light from the thin-film multilayer substrate in a specific direction; and means for extracting a pattern defect from a detected image. 6. A thin-film multilayer substrate manufacturing system for sequentially laminating an insulating layer and a wiring layer, wherein a visual inspection device for inspecting a pattern defect of the thin-film multilayer substrate and a repair device for correcting the pattern defect are connected by a network. A thin-film multilayer substrate manufacturing system, wherein the inspection result of the visual inspection device is transferred to a correction device, and the correction device corrects a pattern based on the transferred inspection result.