JPH10312995A - Multilayer structural member for sputter etching system - Google Patents

Abstract

PROBLEM TO BE SOLVED: To suppress deposition of a foreign matter generated to sputtering in a sputter etching system by covering the upper surface of a basic body with an outer layer composed of a material having saturation vapor pressure higher than that of an aluminum material. SOLUTION: The multilayer structural member, i.e., a clamp 1, for a sputter etching comprises a laminate of a basic body 1a and an outer layer 1b. The clamp 1 clamps a work to be etched, i.e., a wafer 10, to a work stage. The outer layer 1b covers the basic body 1a and prevents the basic body 1a from being exposed to the ions in a plasma. The outer layer 1b is composed of a material having saturation vapor pressure higher than that of an aluminum material. According to the arrangement, a reaction product is prevented from being deposited in a chamber to produce dust.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a multi-layer structural member for a sputter etching apparatus, and more particularly to a multi-layer structural member used in a sputter etching apparatus and having a surface made of a material having a high saturated vapor pressure.

[0002]

2. Description of the Related Art Sputter etching is a reaction product having a high vapor pressure by reacting an activated element such as ions and radicals in plasma with a workpiece to be etched in a sputter etching apparatus. This is a technique for forming wiring and contacts by exhausting gas.

[0003] The operation principle of such a conventional sputter etching apparatus will be described with reference to the explanatory diagram of FIG. FIG. 4 is a sectional view of a clamp as a conventional structural member used in a conventional sputter etching apparatus.

In both figures, a wafer 10 which is a workpiece to be etched placed in a sputter etching apparatus is shown.
Is clamped to the workpiece stage 2 by a clamp 50 which is a ring-shaped disk having a round window opening at the center.

The etched surface 10a of the clamped wafer 10 is exposed from the round window-shaped opening of the clamp 50, and the exposed portion is sputter-etched by ions 3 in the plasma. At this time, a gasified reaction product 10b is generated from the etched portion, and the reaction product 10b is discharged out of the sputter etching apparatus.

Further, a gas such as He may flow on the back surface of the wafer 10 in order to cool the wafer 10 which is a workpiece to be etched. The wafer 10 is fixed by holding it with a clamp 50 as shown in FIG.
That is, the peripheral part of the wafer 10 is held by the notch 50e, and the peripheral part of the wafer 10 is supported by the corner 50d.
Here, the wafer 10 needs to be supported by a force of several kilograms, and the clamp 50 needs mechanical strength to withstand it. Accordingly, the clamp 50 is generally integrally formed of a ceramic material.

[0007]

By the way, in the sputter etching apparatus, the clamp 50 is also exposed to the ions 3 in the plasma and undergoes sputtering. Clamp 5
When 0 is a ceramic-based material, aluminum (hereinafter referred to as Al) is formed by sputtering of ions in the plasma.
) Is generated.

However, among such reaction products, particularly, Al-based reaction products have a problem that they are likely to resolidify due to low vapor pressure, and therefore, they rebound on the wafer along the locus 54 and reprecipitate. In addition, there is an inconvenience that it easily adheres to the clamp or the chamber wall. In addition, since the re-precipitate is a stable product, it is difficult to remove it by plasma cleaning or the like, which has been a cause of dust.

On the other hand, with the recent miniaturization of semiconductor integrated devices, dust allowed in the manufacturing process may be reduced to, for example, 0.1.
Monitoring is 2 μm or less, and the order is several tens or less. Therefore, it is indispensable to reduce contamination by the structural members used in the chamber. It is not easy to suppress the occurrence, so that the maintenance frequency increases, and in addition, there is a disadvantage that the yield is unfavorably affected.

SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems in the prior art, and it is an object of the present invention to provide a multilayered member capable of suppressing the deposition of foreign matter generated by sputtering in a sputter etching apparatus. Aim.

[0011]

In order to solve the above-mentioned problems of the prior art, a multilayer structural member of a sputter etching apparatus according to claim 1 of the present invention is constituted by laminating a base and an outer layer. Support the workpiece to be etched,
At least the upper surface of the base is covered with an outer layer, and the material constituting the outer layer is made of a material whose saturated vapor pressure is higher than at least the saturated vapor pressure of the aluminum-based material.

According to the above-described structure, the material to be etched is firmly and reliably held by the substrate, and since the saturated vapor pressure of the outer layer is high, reprecipitation of sputter products is suppressed.

According to a second aspect of the present invention, there is provided a multilayer structure member for a sputter etching apparatus according to the first aspect, wherein the upper layer is laminated on the base by bonding. According to the above configuration, the upper layer is firmly laminated on the base by adhesion, and peeling is less likely to occur.

According to a third aspect of the present invention, there is provided a multilayer structure member for a sputter etching apparatus according to the first aspect, wherein the upper layer is laminated on the base by a fitting structure. I do. According to the above configuration,
Due to the fitting structure, the upper layer is firmly laminated on the base, and the occurrence of peeling is eliminated.

According to a fourth aspect of the present invention, there is provided a multilayer structure member for a sputter etching apparatus according to the first aspect, wherein the upper layer is laminated on the base by a screw-in structure. I do. According to the above configuration, the upper layer is firmly laminated on the base by the screwing structure, and there is no occurrence of peeling.

According to a fifth aspect of the present invention, there is provided a multilayer structure member for a sputter etching apparatus according to the first to fourth aspects, wherein the base is made of a metal. According to the above configuration, the material to be etched is firmly and reliably held by the mechanical strength of the metal material.

According to a sixth aspect of the present invention, there is provided a multilayer structure member for a sputter etching apparatus according to the first to fourth aspects, characterized in that the base body includes at least ceramic. According to the configuration, the material to be etched is firmly and reliably held by the mechanical strength of the ceramic material.

According to a seventh aspect of the present invention, there is provided a multilayer structure member for a sputter etching apparatus according to the first to fourth aspects, wherein the upper layer is made of quartz. According to the above configuration, the vapor pressure of the product from quartz by sputtering is high, and re-deposition on the surface to be etched is suppressed.

According to a eighth aspect of the present invention, there is provided a multilayer structure member for a sputter etching apparatus according to the first to fourth aspects, wherein the upper layer is made of a polyimide resin. According to the above configuration, the vapor pressure of the product from the polyimide resin by sputtering is high, and reprecipitation on the surface to be etched is suppressed.

According to a ninth aspect of the present invention, there is provided a multilayer structure member for a sputter etching apparatus according to the first to fourth aspects, wherein the upper layer is made of a polyamide resin. According to the above configuration, the vapor pressure of the product from the polyamide resin by sputtering is high, and reprecipitation on the surface to be etched is suppressed.

According to a tenth aspect of the present invention, there is provided a multilayer structure member for a sputter etching apparatus according to the first to fourth aspects, wherein the upper layer is made of a polyamide-imide resin. According to the above configuration, the vapor pressure of the product from the polyamide-imide resin by sputtering is high, and re-deposition on the surface to be etched is suppressed.

[0022]

Preferred embodiments of the present invention will be described below in detail with reference to the accompanying drawings. The embodiment described below is a part of a preferred embodiment of the present invention,
Although various limitations that are preferable in terms of the technical configuration are given, the scope of the present invention is not limited to these embodiments unless otherwise specified in the following description.

According to the present invention, in order to reduce re-deposition of a product generated by an attack by a plasma on a structural member inside the apparatus in sputter etching, the product is easily vaporized by a quartz or resin-based multilayer structure, and the re-deposition is performed. By making it difficult, the maintenance frequency is extended and low-particle products are manufactured.

FIG. 1 is a top view showing the configuration of an embodiment of the multilayer structure member of the sputter etching apparatus according to the present invention. FIG. 2 is a sectional view of the multilayer structural member shown in FIG. FIG. 3 is an explanatory view of the operation principle in one embodiment of the multilayer structure member of the sputter etching apparatus according to the present invention.

As shown in FIG. 1, a clamp 1 which is a multilayer structure member of a sputter etching apparatus according to the present invention.
Is a ring-shaped disc having a round window-shaped opening in the center,
It is configured by laminating a base 1a and an outer layer 1b. The clamp 1 holds a wafer 10 as a workpiece to be etched in a sputter etching apparatus by using a workpiece stage 2.
(See FIG. 3).

The etched surface 10a of the clamped wafer 10 (see FIG. 3) is exposed from the round window-shaped opening of the clamp 1 and is in a state of being sputtered by ions 3 (see FIG. 3) in the plasma.

As a result, the surface 10a to be etched of the wafer 10 is attacked by the ions 3, and a desired portion which is not protected by a resist or the like is dry-etched, whereby a desired pattern is formed. Gasified reaction product 10b generated from the etched portion
Is discharged out of the sputter etching apparatus.

On the other hand, the base 1a of the clamp 1 is on the lower side, and the notch 1e holds the peripheral portion of the wafer 10 and the corner 1d suppresses the peripheral portion of the wafer 10. The outer layer 1b is laminated on the base 1a and covers the base 1a on the upper side to prevent the base 1a from being exposed to the ions 3 in the plasma.

The base 1a is made of metal having mechanical strength,
It is composed of ceramic material. On the other hand, the outer layer 1b is made of a material having a saturated vapor pressure higher than at least the saturated vapor pressure of the aluminum-based material. Suitable materials for the outer layer 1b include quartz, a polyamide-based resin, a polyimide-based resin, and a polyamide-imide-based resin which are excellent in heat resistance among resin-based resins. Further, a Teflon-based resin can also be used.

In any of these, when the outer layer 1b of the clamp 1 is ion-attacked during sputter etching,
The reaction product to be generated has a characteristic that it is easily vaporized, and thus is difficult to reprecipitate. For example, SiF4, CO2, or the like having a high vapor pressure is generated as a reaction product. Therefore, as shown in FIG. 3, it becomes easy to discharge the reaction product 1c from the outer layer 1b to the outside of the system without being precipitated.

As a result, it is possible to eliminate the generation of dust due to the deposition of reaction products in the chamber. That is, with the double structure clamp, the density of re-deposited particles and dust can be reduced while maintaining the supporting strength, and the yield can be improved. further,
Simplification of maintenance, for example, replacement of the clamp facilitates teaching.

The form of lamination of the base 1a and the outer layer 1b is preferably lamination by adhesion, lamination by a fitting structure, lamination by a screw insertion structure, or the like.

In the above-described embodiment, the base member is constituted by one layer, and the outer layer is constituted by a two-layer structure member constituted by one layer. However, the present invention is not limited to this. May be a multi-layered structural member composed of two or more layers.

Further, in the above-described embodiment, the clamp is an example of the multilayer structure member. However, in addition to the clamp, the present invention can be applied to parts in a chamber for shielding and the like, a vessel wall, and the like.

[0035]

As described in detail above, claim 1 of the present invention
In the multilayer structure member of the sputter etching apparatus according to the above, the lower surface of the substrate supports the workpiece to be etched, at least the upper surface of the substrate is covered by the outer layer, and the material constituting the outer layer has a saturated vapor pressure of at least the saturation of the aluminum-based material. Since the material to be etched is made of a material having a higher vapor pressure, the material to be etched can be firmly and reliably held by the base, so that the maintenance can be simplified and the life of the member can be extended.
Moreover, since the outer layer has a high saturated vapor pressure, re-precipitation of sputter products can be suppressed, and the yield can be improved.

The multilayer structure member of the sputter etching apparatus according to claim 2 of the present invention has the structure described in claim 1, wherein the outer layer is laminated on the base by adhesion. The outer layer is firmly laminated on the base, and thus has the effect of preventing the occurrence of peeling.
As a result, running costs can be reduced by simplifying maintenance and extending the life of members.

The multilayer structure member of the sputter etching apparatus according to claim 3 of the present invention has the structure described in claim 1 and has a structure in which an outer layer is fitted to a base by a fitting structure. Due to the fitting structure, the outer layer is firmly laminated on the base, so that the occurrence of peeling can be suppressed. As a result, running costs can be reduced by simplifying maintenance and extending the life of members.

According to a fourth aspect of the present invention, there is provided a multi-layer structure member for a sputter etching apparatus according to the first aspect, wherein an outer layer is laminated on a base by a screw-in structure. The outer layer is firmly laminated to the base by the screw-in structure, so that there is no peeling. As a result, running costs can be reduced by simplifying maintenance and extending the life of members.

According to a fifth aspect of the present invention, there is provided a multi-layer structure member for a sputter etching apparatus according to any one of the first to fourth aspects, wherein the base is made of a metal. Accordingly, the material to be etched can be firmly and reliably held, and the running cost can be reduced by simplifying the maintenance.

According to a sixth aspect of the present invention, there is provided a multilayer structure member for a sputter etching apparatus according to any one of the first to fourth aspects, wherein the base material includes at least ceramic. Due to the provided mechanical strength, the material to be etched can be firmly and reliably held, so that the maintenance cost can be reduced by simplifying the maintenance and extending the life of the member.

The multilayer structure member of the sputter etching apparatus according to claim 7 of the present invention has the configuration according to any one of claims 1 to 4, wherein the outer layer is formed of quartz. Since the vapor pressure of the object is high, reprecipitation on the surface to be etched can be suppressed, and the yield can be improved.

The multilayer structure member of the sputter etching apparatus according to the eighth aspect of the present invention has the structure according to any one of the first to fourth aspects, wherein the outer layer is made of a polyimide resin. The vapor pressure of the product from the resin is high, so that reprecipitation on the surface to be etched can be suppressed, and the yield can be improved.

According to a ninth aspect of the present invention, there is provided a multilayer structure member for a sputter etching apparatus according to any one of the first to fourth aspects, wherein the outer layer is made of a polyamide resin. The vapor pressure of the product from the resin is high, so that reprecipitation on the surface to be etched can be suppressed, and the effect of improving the yield can be realized.

According to a tenth aspect of the present invention, there is provided a multilayer structure member for a sputter etching apparatus according to the first to fourth aspects, wherein the outer layer is made of a polyamide-imide resin. The vapor pressure of the product from the polyamide / imide-based resin is high, so that reprecipitation on the surface to be etched can be suppressed and the yield can be improved.

[Brief description of the drawings]

FIG. 1 is a top view showing a configuration of an embodiment of a multilayer structure member of a sputter etching apparatus according to the present invention.

FIG. 2 is a sectional view of the multilayer structural member shown in FIG.

FIG. 3 is an explanatory view of an operation principle in one embodiment of the multilayer structural member of the sputter etching apparatus according to the present invention.

FIG. 4 is a sectional view of a conventional structural member.

FIG. 5 is an explanatory view of an operation principle of a structural member of a conventional sputter etching apparatus.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Clamp (multilayer structural member), 1a ... Base, 1b ... Outer layer, 1c ... Sputtered product, 1d ... Corner, 1e ... Notch, 2 ... Workpiece stage, 3 ... Ion, 10 ... Wafer (workpiece to be etched) ), 10a: etching surface, 10b: sputter

Claims (10)

[Claims] A lower surface of the substrate supports a workpiece to be etched, at least an upper surface of the substrate is covered by an outer layer, and a material constituting the outer layer has a saturated vapor pressure. A multilayer structure member for a sputter etching apparatus, wherein the multilayer structure member is made of a material higher than at least the saturated vapor pressure of an aluminum-based material. 2. The multi-layer structural member for a sputter etching apparatus according to claim 1, wherein said outer layer is laminated on said base by adhesion. 3. The multilayer structure member of a sputter etching apparatus according to claim 1, wherein said outer layer is laminated on said base by a fitting structure. 4. A multi-layer structure member for a sputter etching apparatus according to claim 1, wherein said outer layer is laminated on said base by a screw-in structure. 5. The multilayer structure member for a sputter etching apparatus according to claim 1, wherein said substrate is made of a metal. 6. The multilayer structure member for a sputter etching apparatus according to claim 1, wherein said base body comprises at least ceramic. 7. The multilayer structure member for a sputter etching apparatus according to claim 1, wherein said outer layer is made of quartz. 8. The multilayer structure member for a sputter etching apparatus according to claim 1, wherein said outer layer is made of a polyimide resin. 9. The multilayer structure member for a sputter etching apparatus according to claim 1, wherein the outer layer is made of a polyamide resin. 10. The multilayer structure member for a sputter etching apparatus according to claim 1, wherein said outer layer is made of a polyamide-imide resin.