JPH10308365A - Manufacture of semiconductor device and semiconductor device manufactured by the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To improve productivity, workability, and yield by preventing adhesive sheet from peeling off a full cutting ring and the adhesive component from adhering to the full cutting ring. SOLUTION: An adhesive sheet 2 is stuck on a full cutting ring 3 for supporting the adhesive sheet and a wafer is stuck on the adhesive sheet 2. After the full cutting and dicing process which cuts and separates the wafer into individual semiconductor devices, a short wavelength light 4 ranging from visible to unltra violet is selectively applied to a part of the adhesive sheet.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a method for manufacturing a semiconductor device and a semiconductor device manufactured by the method.

[0002]

2. Description of the Related Art In a conventional method of manufacturing a semiconductor device, a wafer which has been subjected to a diffusion step of forming an active circuit of a semiconductor element on the wafer is processed by grinding a back surface of the wafer on which the active circuit of the semiconductor element is not formed. Grinding is performed, and thereafter, it is put into an assembling process through an electrical characteristic measuring process. Before performing a full cut dicing step of completely cutting and dividing the wafer into semiconductor elements, the wafer put into the assembling step is adhered from below to an adhesive sheet for holding and sticking the wafer from below, and the adhesive sheet is After the full-cut dicing, the resin is cured by irradiating light in a range from short wavelength visible light to ultraviolet light. By irradiating light in the range from short-wavelength visible light to ultraviolet light, the adhesive force of the adhesive sheet is greatly reduced, so that the semiconductor element completely separated by full-cut dicing can be picked up with a weak force. Become. However, since irradiation of light in the range from short wavelength visible light to ultraviolet light is performed on the entire adhesive sheet,
The adhesive strength to the full-cut ring holding the adhesive sheet decreases, and the adhesive sheet peels off from the full-cut ring with a slight impact after irradiating light in the range from short-wavelength visible light to ultraviolet light, deteriorating productivity. There was a problem of inviting.

In order to avoid this phenomenon, when the adhesive sheet is irradiated with light ranging from short-wavelength visible light to ultraviolet light, short-wavelength visible light is applied to the adhesive sheet in contact with the full cut ring. There is also a method of maintaining the adhesive force without irradiating light in the range of ultraviolet light to ultraviolet light. A similar adhesive sheet processing apparatus is also known in JP-A-62-189111, but a chip is picked up. At that time, the adhesive component is shifted due to the tension applied to the adhesive sheet,
The adhesive component remains in a portion around the adhesive sheet. This full-cut ring is used repeatedly, but due to the residual of the adhesive component, when the full-cut rings are stacked, the full-cut rings stick to each other, causing a problem, or causing a transfer error in the transfer of the full-cut ring. In addition, in order to improve such workability inconveniences, it is necessary to remove remaining adhesive components, and workability has been significantly deteriorated.

[0004]

A first object is to provide an adhesive sheet for holding the wafer from below before performing a full-cut dicing step of completely cutting and dividing the wafer into semiconductor elements. Adhesive, after full cut dicing, in the conventional technology of curing the adhesive sheet by irradiation of light in the range of short-wavelength visible light to ultraviolet light, in the range of short-wavelength visible light to ultraviolet light in the entire adhesive sheet Due to the light irradiation, the adhesive sheet is peeled off from the full cut ring holding the adhesive sheet from above with a slight impact after irradiation with light in a range from short wavelength visible light to ultraviolet light. After the dicing step, the semiconductor element and the full cut ring adhered to the pressure-sensitive adhesive sheet flow integrally into the next step, but the pressure-sensitive adhesive sheet is peeled off, whereby the pressure-sensitive adhesive sheet is involved in subsequent production, and the element is removed. Destroy
There has been a problem that yield and productivity are deteriorated.

[0005] The reason is that the entire surface of the pressure-sensitive adhesive sheet is irradiated with light in a range from short-wavelength visible light to ultraviolet light, so that the pressure-sensitive adhesive strength of the contact surface between the pressure-sensitive adhesive sheet and the full cut ring holding the pressure-sensitive adhesive sheet is reduced. Because you do.

A second problem is that, when the adhesive sheet is irradiated with light in a range from short-wavelength visible light to ultraviolet light, only the portion in contact with the full cut ring extends from short-wavelength visible light to ultraviolet light. There is also a method of maintaining adhesive strength without irradiating light in the range, but when tension is applied to the adhesive sheet or the adhesive sheet shrinks, the adhesive component remains on the outer circumference of the full cut ring, and the full cut When the rings are stacked, a problem occurs in that the full-cut rings are stuck together, and a problem occurs in that a conveyance error occurs in the conveyance of the full-cut rings. This causes a problem of deteriorating the yield and workability.

[0007] The reason is that the portion in contact with the full cut ring does not irradiate the adhesive sheet with light in a range from short wavelength visible light to ultraviolet light, so that the adhesive sheet has a strong adhesive force and is not affected by vibration or the like. However, the holding force as a force against the static force of the pressure-sensitive adhesive sheet is increased by irradiating light in a range from short-wavelength visible light to ultraviolet light. Therefore, the full-cut ring adhesive surface of the pressure-sensitive adhesive sheet does not irradiate light in the range from short-wavelength visible light to ultraviolet light, and therefore has insufficient holding power. This is because the components remain.

According to the present invention, there is provided a method of manufacturing a semiconductor device capable of preventing peeling of an adhesive sheet from a full-cut ring and adhesion of an adhesive component to the full-cut ring, thereby improving productivity, workability and yield, and a method for manufacturing the same. It is an object of the present invention to provide a manufactured semiconductor device.

[0009]

The above object is achieved by the following means.

That is, in the present invention, in a method for manufacturing a semiconductor device, an adhesive sheet having an adhesive surface is adhered to a full-cut ring for holding the adhesive sheet, and further, a wafer is adhered to the adhesive sheet. In the full-cut dicing step of completely cutting the wafer and dividing it into each semiconductor element for the constituted structure, after the full-cut dicing step, a portion of the adhesive sheet is selectively irradiated with short-wavelength visible light to ultraviolet light. And a method of manufacturing a semiconductor device that irradiates light in a range over the pressure-sensitive adhesive sheet. Cover the inner peripheral surface with a mask or the like having a light-shielding effect, and locally irradiate light in the range from short-wavelength visible light to ultraviolet light. In the contact surface of the pressure-sensitive adhesive sheet and the full-cut ring, the pressure-sensitive adhesive sheet contact surface inner peripheral portion not including the vicinity of the innermost peripheral portion of the full-cut ring contact surface is covered with a mask or the like having a light-shielding effect, from visible light of short wavelength. The method includes locally irradiating light in a range over ultraviolet light.

The present invention also proposes a semiconductor device manufactured by the above method.

[0012]

Next, an embodiment of the present invention will be described in detail with reference to the drawings.

Referring to FIG. 1A or FIG. 1B, a preferred embodiment of the present invention is a pressure-sensitive adhesive sheet for holding a semiconductor element 1 adhered from below the semiconductor element 1. 2 and a full-cut ring 3 held from above the adhesive sheet 2, using a mask 6 having a light-shielding effect, using a mask 6 having a light-shielding effect, in a range of light 4 ranging from short-wavelength visible light to ultraviolet light.
Is locally irradiated. That is, on the adhesive surface between the adhesive sheet 2 and the full cut ring 3, a region irradiated with light 4 in a range from short wavelength visible light to ultraviolet light, and a light 4 in a range from short wavelength visible light to ultraviolet light.
By selectively forming the region not irradiated with the adhesive, the adhesive force and the holding force can be simultaneously obtained, and the full cut ring 3
No adhesive component remains on the surface. Therefore, productivity and workability in the manufacture of the semiconductor device are improved. The adhesive sheet 2 has such a property that the adhesive force is reduced and the holding force is increased by irradiation of light in a range from short wavelength visible light to ultraviolet light, and the adhesive surface is cured.

Next, the operation of the embodiment of the present invention will be described in detail with reference to FIGS.

The wafer 5 put into the assembling step shown in FIG. 2A is put into a full cut dicing step in which the wafer 5 is completely cut into the semiconductor elements 1 and divided. Here, the wafer 5 is adhered onto the adhesive sheet 2 held by the full cut ring 3, as shown in FIG. Then, as shown in FIGS. 2C and 2D, full-cut dicing is performed to separate the semiconductor element 1 from each other.
As shown in FIG. 1A, a part of the inner periphery of the full cut ring 3 and its periphery, or as shown in FIG. It covers from the irradiation direction of light 4 in the range of visible light to ultraviolet light, and irradiates with light 4 in the range of short wavelength visible light to ultraviolet light to locally maintain the adhesive strength and holding power of the adhesive sheet.

According to the present invention, after the full-cut dicing step, the pressure-sensitive adhesive sheet is locally irradiated with light in a range from short-wavelength visible light to ultraviolet light, so that the semiconductor element contact portion of the pressure-sensitive adhesive sheet is adhered. Due to the decrease in the force, the semiconductor element can be picked up with a weak force. at the same time,
In the part of the inner peripheral part of the contact part with the pressure-sensitive adhesive sheet and the full-cut ring, and the pressure-sensitive adhesive sheet in the vicinity thereof, the pressure-sensitive adhesive force is locally reduced, and the holding force is locally increased. The sheet can be easily peeled off, and adhesion of the adhesive component to the full cut ring can be prevented.

[0017]

Next, an embodiment of the present invention will be described in detail with reference to the drawings.

Referring to FIG. 1 (a) or (b), the semiconductor element 1 is adhered to an adhesive sheet 2 for holding the semiconductor element 1 from below and a full cut ring 3 for holding the adhesive sheet 2. The light 4 in the range from short wavelength visible light to ultraviolet light is locally irradiated by using a mask 6 having a light shielding effect. The pressure-sensitive adhesive sheet is a vinyl chloride-based or polyolefin-based film exhibiting the properties of a pressure-sensitive adhesive on the surface, and the full cut ring is made of an alloy. Irradiation light 7 is used as irradiation light. The pressure-sensitive adhesive sheet 2 has such a property that the pressure-sensitive adhesive surface is cured by the irradiation of light in a range from short-wavelength visible light to ultraviolet light, whereby the adhesive force is reduced and the holding force is increased.

Next, the operation of the embodiment of the present invention will be described in detail with reference to FIGS.

FIG. 2 (a) shows a wafer 5 put into assembly.
Is supplied to a full-cut dicing step of completely cutting the wafer 5 and dividing it into the semiconductor elements 1. Here, the wafer 5 is adhered onto the adhesive sheet 2 held by the full cut ring 3, as shown in FIG. The adhesive strength of the adhesive sheet 2 is JIS Z 02 before irradiation with the irradiation light 7 in a typical vinyl chloride-based adhesive sheet.
It is 200 g / 25 mm according to a measuring method according to No. 37, but after irradiating the irradiation light 7, the adhesive strength becomes JISZ 02
A measuring method conforming to 37 and having a property of decreasing to 20 g / 25 mm is used. On the other hand, the holding force for holding the semiconductor element 1 is J J before irradiation with the irradiation light 7.
Measurement method according to IS Z 0237, with a holding force of 50
After irradiating the irradiation light 7, the holding force increases to 70,000 seconds by the measuring method according to JIS Z0237, while the irradiation time is from 00 to 10,000 seconds. When picking up the semiconductor element 2, it is preferable that the adhesive force is low and the holding force is high. However, if the adhesive force between the adhesive sheet 2 and the full cut ring 3 is low, the adhesive sheet can be slightly separated from the full cut ring 3. When the holding force between the pressure-sensitive adhesive sheet 2 and the full-cut ring 3 is low, the pressure-sensitive adhesive component of the pressure-sensitive adhesive sheet 2 easily peels off and remains on the fill-cut ring 3. For this reason, between the pressure-sensitive adhesive sheet 2 and the full cut ring 3, a moderately high pressure and holding force are required. Thereafter, full-cut dicing is performed as shown in FIG. 2C and FIG. 2D, and after the semiconductor element 1 is separated, as shown in FIG. And the irradiation light 7 is locally irradiated while avoiding a part of the inner peripheral portion of the contact surface with the adhesive sheet 2 and the full cut ring 3 and its periphery. When the irradiation with the irradiation light 7 is performed as a whole, the adhesive force of the contact portion with the adhesive sheet 2 and the full cut ring 3 is reduced, so that an external force and vibration are applied by transport and handling after the dicing step, and The sheet 2 is peeled off from the full cut ring 3. Further, in order to prevent the adhesive sheet 2 from peeling, when the entire contact surface between the adhesive sheet 2 and the full cut ring 3 is shielded by the irradiation light 7,
Since the contact surface between the pressure-sensitive adhesive sheet 2 and the full-cut ring 3 has a low holding force in the shearing direction, the pressure-sensitive adhesive sheet contracts due to the tension of the pressure-sensitive adhesive sheet, and the pressure-sensitive adhesive component of the pressure-sensitive adhesive sheet 2 easily peels off and remains. For this reason, by irradiating the irradiation light 7 locally, it becomes possible to obtain both the adhesive force and the holding force of the adhesive sheet.

As shown in FIG. 3B, after the full-cut dicing step, the irradiation light 7 is covered with a mask 6 having a light-shielding effect from the irradiation direction, and the irradiation light 7 is irradiated with the adhesive sheet 2.
Then, irradiation is performed locally avoiding the innermost peripheral portion of the contact portion with the full cut ring 3. In this method, since the innermost peripheral portion of the contact surface between the pressure-sensitive adhesive sheet 2 and the full cut ring 3 exhibits a high holding force, a higher effect can be expected with respect to improvement in productivity, workability, and yield.

[0022]

The first effect is that after a full-cut dicing step in which a wafer is completely cut into semiconductor elements and divided, a pressure-sensitive adhesive sheet holding the wafer or the semiconductor element from below and a full sheet holding the pressure-sensitive adhesive sheet from below. Part of the inner peripheral part of the contact part with the cut ring and its periphery, or part of the inner peripheral part, is locally exposed to light in the range from short-wavelength visible light to ultraviolet light using a mask or the like having a light-shielding effect. Irradiation of the adhesive sheet can prevent peeling of the adhesive sheet from the full cut ring. This is expected to improve the productivity and yield in the semiconductor device manufacturing process.

The reason is that after full cut dicing,
By irradiating light in the range from short-wavelength visible light to ultraviolet light, the adhesive sheet can be cured and the semiconductor element can be picked up with a weak force. By irradiating light in a range ranging from ultraviolet light to ultraviolet light, the adhesive force between the adhesive sheet and the contact surface of the full cut ring holding the adhesive sheet is reduced, and the adhesive sheet is peeled off. For this reason, the part of the contact surface of the full-cut ring that holds the pressure-sensitive adhesive sheet of the pressure-sensitive adhesive sheet is shielded from irradiation of light in the range from short-wavelength visible light to ultraviolet light, and locally reduces the pressure-sensitive adhesive strength of the pressure-sensitive adhesive sheet. This is because the holding can prevent peeling of the pressure-sensitive adhesive sheet. Furthermore, the adhesive sheet, avoiding a part near the inner peripheral portion of the contact portion with the full cut ring, when irradiating light in the range of short wavelength visible light to ultraviolet light, the adhesive sheet and the full cut ring Since the innermost peripheral portion of the contact surface exhibits a high holding force, a higher effect can be expected with respect to improvement in productivity, workability, and yield. In other words, on the adhesive surface of the adhesive sheet and the full cut ring, a region irradiated with light in a range from short wavelength visible light to ultraviolet light,
This is because the adhesive strength and the holding power can be simultaneously obtained by selectively forming a region that is not irradiated with light in a range from short wavelength visible light to ultraviolet light.

The second effect is that after the full-cut dicing step, a part of the inner peripheral portion of the contact portion between the pressure-sensitive adhesive sheet and the full-cut ring and its periphery or a part near the inner peripheral portion has a light-shielding effect. By locally irradiating light in a range from short-wavelength visible light to ultraviolet light with a mask or the like, adhesion of the adhesive component to the full cut ring can be prevented. This is expected to improve workability in the semiconductor device manufacturing process.

The reason is that after full cut dicing,
By blocking the irradiation of light in the range from short wavelength visible light to ultraviolet light over the entire contact surface between the adhesive sheet and the full cut ring, the holding force of the contact surface between the adhesive sheet and the full cut ring is insufficient. The adhesive component of the adhesive sheet remains in the full cut ring after the full cut dicing step. For this reason, the outer peripheral portion of the contact surface of the pressure-sensitive adhesive sheet and the full-cut ring holding the pressure-sensitive adhesive sheet is irradiated with light in a range from short-wavelength visible light to ultraviolet light, and the pressure-sensitive adhesive sheet is easily peeled off after the full-cut dicing step. This is because the adhesion of the adhesive component of the adhesive sheet to the full cut ring can be prevented. That is, in the adhesive surface of the adhesive sheet and the full cut ring, a region irradiated with light in a range ranging from short wavelength visible light to ultraviolet light, and a region irradiated with light in a range ranging from short wavelength visible light to ultraviolet light. Is selectively formed, so that the adhesive force and the holding force can be simultaneously obtained, so that the adhesive component does not remain in the full cut ring.

[Brief description of the drawings]

FIGS. 1A and 1B are side sectional views illustrating an embodiment of the present invention.

2 (a), 2 (b) and 2 (c) are exploded sectional views for explaining an embodiment of the present invention, and FIG. 2 (d) is a side sectional view.

FIGS. 3A and 3B are side cross-sectional views for explaining the operation of the embodiment of the present invention.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Semiconductor element 2 Adhesive sheet 3 Full cut ring 4 Light in the range from short wavelength visible light to ultraviolet light 5 Wafer 6 Mask having light shielding effect 7 Irradiation light

Claims (4)

[Claims] 1. A method for manufacturing a semiconductor device, comprising: adhering an adhesive sheet having an adhesive surface to a full-cut ring for holding the adhesive sheet; and adhering a wafer to the adhesive sheet. For the body, in the full-cut dicing step of completely cutting the wafer and dividing it into each semiconductor element, after the full-cut dicing step, to a part of the adhesive sheet, selectively over a range from short-wavelength visible light to ultraviolet light. A method for manufacturing a semiconductor device, comprising irradiating light. 2. In the contact surface of the pressure-sensitive adhesive sheet and the full cut ring, the inner peripheral portion of the pressure-sensitive adhesive sheet contact surface including the vicinity of the innermost peripheral portion of the full cut ring contact surface is covered with a mask having a light-shielding effect. The method of manufacturing a semiconductor device according to claim 1, wherein light having a wavelength ranging from visible light to ultraviolet light is locally applied. 3. In the contact surface between the pressure-sensitive adhesive sheet and the full-cut ring, the inner peripheral portion of the pressure-sensitive adhesive sheet-contact surface not including the vicinity of the innermost peripheral portion of the full-cut ring contact surface is covered with a light-shielding mask or the like. The method of manufacturing a semiconductor device according to claim 1, wherein light having a wavelength ranging from visible light to ultraviolet light is locally applied. 4. A semiconductor device manufactured by the method according to claim 1. Description: