JPH10308285A - Organic electroluminescent element and electrode structure thereof - Google Patents
Organic electroluminescent element and electrode structure thereofInfo
- Publication number
- JPH10308285A JPH10308285A JP9130267A JP13026797A JPH10308285A JP H10308285 A JPH10308285 A JP H10308285A JP 9130267 A JP9130267 A JP 9130267A JP 13026797 A JP13026797 A JP 13026797A JP H10308285 A JPH10308285 A JP H10308285A
- Authority
- JP
- Japan
- Prior art keywords
- metal oxide
- conductive metal
- conductive material
- organic
- light emitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 22
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 22
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims abstract description 21
- 239000004020 conductor Substances 0.000 claims abstract description 18
- 239000000203 mixture Substances 0.000 claims abstract description 6
- 229910052709 silver Inorganic materials 0.000 claims abstract description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 3
- 229910052802 copper Inorganic materials 0.000 claims abstract description 3
- 229910052737 gold Inorganic materials 0.000 claims abstract description 3
- 229910052763 palladium Inorganic materials 0.000 claims abstract 2
- 230000005525 hole transport Effects 0.000 claims description 22
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 9
- 229910006404 SnO 2 Inorganic materials 0.000 claims description 3
- 238000005401 electroluminescence Methods 0.000 claims description 3
- 239000000758 substrate Substances 0.000 abstract description 15
- 239000011521 glass Substances 0.000 abstract description 12
- -1 TiN and ZrB2 Chemical class 0.000 abstract description 6
- 229910052751 metal Inorganic materials 0.000 abstract description 6
- 239000002184 metal Substances 0.000 abstract description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 abstract description 3
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 abstract description 3
- 239000000853 adhesive Substances 0.000 abstract description 2
- 230000001070 adhesive effect Effects 0.000 abstract description 2
- 150000002736 metal compounds Chemical class 0.000 abstract description 2
- 229910007948 ZrB2 Inorganic materials 0.000 abstract 1
- VWZIXVXBCBBRGP-UHFFFAOYSA-N boron;zirconium Chemical compound B#[Zr]#B VWZIXVXBCBBRGP-UHFFFAOYSA-N 0.000 abstract 1
- 238000010030 laminating Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 description 12
- 239000011787 zinc oxide Substances 0.000 description 9
- 238000004544 sputter deposition Methods 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 150000002894 organic compounds Chemical class 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000005266 casting Methods 0.000 description 2
- 239000010406 cathode material Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- DNTVTBIKSZRANH-UHFFFAOYSA-N 4-(4-aminophenyl)-3-(3-methylphenyl)aniline Chemical compound CC1=CC=CC(C=2C(=CC=C(N)C=2)C=2C=CC(N)=CC=2)=C1 DNTVTBIKSZRANH-UHFFFAOYSA-N 0.000 description 1
- 229910020068 MgAl Inorganic materials 0.000 description 1
- 229910017911 MgIn Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910000416 bismuth oxide Inorganic materials 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229910000423 chromium oxide Inorganic materials 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000009849 deactivation Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 229920003227 poly(N-vinyl carbazole) Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
- H10K50/816—Multilayers, e.g. transparent multilayers
Landscapes
- Electroluminescent Light Sources (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、有機エレクトロル
ミネッセンス素子（以下、「有機ＥＬ素子」と略称す
る。）の新規陽極構造及びこれを使用した有機ＥＬ素子
に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a novel anode structure of an organic electroluminescence device (hereinafter, abbreviated as "organic EL device") and an organic EL device using the same.
【０００２】[0002]
【従来の技術】従来知られている有機ＥＬ素子として
は、例えば代表例として図１に示されるように、陰極で
ある金属電極１と陽極である透明電極２との間に有機発
光層３、正孔輸送層４が配置されている。ここで、正孔
輸送層４は陽極から正孔を注入され易くする機能と電子
をブロックする機能とを有している。陽極である透明電
極２の外側にはガラス基板５が配置されており、金属電
極１から注入された電子と透明電極２から注入された正
孔との再結合によって励起子が生じ、この励起子が放射
失活する過程で光を放ち、この光が透明電極２及びガラ
ス基板５を介して外部に放出される。上記発光層は、一
般的には有機蛍光体薄膜により構成される。2. Description of the Related Art As a conventionally known organic EL device, for example, as shown in FIG. 1 as a typical example, an organic light emitting layer 3 is disposed between a metal electrode 1 as a cathode and a transparent electrode 2 as an anode. The hole transport layer 4 is provided. Here, the hole transport layer 4 has a function of easily injecting holes from the anode and a function of blocking electrons. A glass substrate 5 is disposed outside the transparent electrode 2 serving as an anode, and excitons are generated by recombination of electrons injected from the metal electrode 1 and holes injected from the transparent electrode 2. Emits light in the process of radiation deactivation, and this light is emitted outside through the transparent electrode 2 and the glass substrate 5. The light emitting layer is generally composed of an organic phosphor thin film.
【０００３】従来、有機ＥＬ素子の陽極である透明電極
として、一般にＩＴＯ（In2O3-SnO2の複合酸化物）が使
用されている（特開平5-28834号及び特開平5-166414号
公報参照。）。Conventionally, ITO (composite oxide of In 2 O 3 -SnO 2 ) is generally used as a transparent electrode which is an anode of an organic EL device (Japanese Patent Application Laid-Open Nos. Hei 5-28344 and Hei 5-166414). Gazette.).
【０００４】[0004]
【発明が解決しようとする課題】透明電極に要求される
特性は、低抵抗、化学的安定性、長期安定性、基板や正
孔輸送層との接着強度等である。上記従来法であるＩＴ
Ｏ膜に関しては、抵抗値が１×１０-4ohm・cm以下にする
ことが困難と考えられている。又、正孔輸送層との接着
強度も十分とは言えず、通電を継続すると界面で剥離す
ることがある。The characteristics required for a transparent electrode are low resistance, chemical stability, long-term stability, adhesion strength to a substrate or a hole transport layer, and the like. The conventional IT
It is considered that it is difficult for the O film to have a resistance value of 1 × 10 −4 ohm · cm or less. Further, the bonding strength with the hole transport layer cannot be said to be sufficient, and when energization is continued, peeling may occur at the interface.
【０００５】そこで、本発明においては、上記従来法に
おける透明電極に比較してより低抵抗値を示し画面の輝
度を均一化し、正孔輸送層との接着強度が高く、かつ低
コストで製造され得る透明電極を提供することを課題と
する。Accordingly, in the present invention, the display device is manufactured at a lower resistance value, makes the brightness of the screen uniform, has higher adhesive strength to the hole transport layer, and is manufactured at lower cost as compared with the transparent electrode of the above-mentioned conventional method. It is an object to provide a transparent electrode that can be obtained.
【０００６】[0006]
【課題を解決するための手段】本発明は、陽極、正孔輸
送層、有機発光層及び陰極を、必要によりこれに更に電
子輸送層を、含む有機ＥＬ素子の陽極として導電性金属
酸化物、高導電性材料及び導電性金属酸化物の３層、又
は導電性金属酸化物（発光層側）及び高導電性材料の２
層を含むことにより、従来の透明電極と比較して低い抵
抗値を示し、画面の輝度を均一化し、正孔輸送層との接
着性を改善することが出来た。According to the present invention, a conductive metal oxide is used as an anode of an organic EL device comprising an anode, a hole transport layer, an organic light emitting layer and a cathode, and if necessary, an electron transport layer. 3 layers of highly conductive material and conductive metal oxide, or 2 layers of conductive metal oxide (light emitting layer side) and high conductive material
By including the layer, the resistance value was lower than that of the conventional transparent electrode, the luminance of the screen was made uniform, and the adhesion to the hole transport layer could be improved.
【０００７】即ち、本発明は、導電性金属酸化物、高導
電性材料及び導電性金属酸化物の３層、又は導電性金属
酸化物及び高導電性材料の２層を含むことを特徴とする
有機ＥＬ素子の新規陽極構造及びこれを使用した有機Ｅ
Ｌ素子である。例えば、透明基板への高導電性材料の拡
散、又は透明基板と高導電性材料との反応による高導電
性材料の劣化、抵抗値の上昇等の可能性がないか、少な
い場合は上記２層構造で十分である。That is, the present invention is characterized by including three layers of a conductive metal oxide, a highly conductive material and a conductive metal oxide, or two layers of a conductive metal oxide and a highly conductive material. New anode structure of organic EL device and organic E using the same
L element. For example, there is no possibility of diffusion of the highly conductive material into the transparent substrate, or deterioration of the highly conductive material due to the reaction between the transparent substrate and the highly conductive material, increase of the resistance value, or the like. The structure is sufficient.
【０００８】[0008]
【発明の実施の形態】本発明の実施の形態を説明する。Embodiments of the present invention will be described.
【０００９】本発明における陽極構造を使用する有機Ｅ
Ｌ素子は、陽極、正孔輸送層、有機発光層及び陰極を含
み、必要によりこれに更に電子輸送層を、含むことも出
来る。これ等を含んでおれば、その他のものを付加的に
含んでいても本発明の有機ＥＬ素子として適用可能であ
る。The organic E using the anode structure according to the present invention
The L element includes an anode, a hole transport layer, an organic light emitting layer, and a cathode, and may further include an electron transport layer if necessary. If these are included, the organic EL element of the present invention can be applied even if other elements are additionally included.
【００１０】本発明の陽極に使用する導電性金属酸化物
は、比抵抗値が１ohm・cm以下が好ましく、より好ましく
は１〜１０-5ohm・cmであり、例えばSnO2等錫の酸化物、
ZnO亜鉛の酸化物、TiO2等チタンの酸化物、Bi2O3等ビス
マスの酸化物、Cr2O3等クロムの酸化物、In2O3等インジ
ウムの酸化物やGaを添加したZnO（例えば、Gaを0.1〜20
重量％含むZnO）等を採用することが出来る。The conductive metal oxide used for the anode of the present invention preferably has a specific resistance value of 1 ohm.cm or less, more preferably 1 to 10 -5 ohm.cm, for example, tin oxide such as SnO 2 . ,
ZnO zinc oxide, titanium oxide such as TiO 2 , bismuth oxide such as Bi 2 O 3 , chromium oxide such as Cr 2 O 3 , indium oxide such as In 2 O 3 , and ZnO added with Ga ( For example, if Ga is 0.1-20
% By weight ZnO) or the like can be employed.
【００１１】高導電性材料としては、導電性金属酸化物
よりも比抵抗値が低く、その比抵抗値は１×１０-4ohm・
cm以下が好ましく、又より好ましくは１×１０-4〜１０
-6ohm・cmであり、例えばAg、Au、Cu、Al等比抵抗値の極
めて小さい金属や、AgにPdを、例えばAgに対し２〜２０
重量％混合したもの、TiN及びZrB2等金属化合物が例示
される。As a highly conductive material, the specific resistance is lower than that of the conductive metal oxide, and the specific resistance is 1 × 10 −4 ohm ·
cm or less, more preferably 1 × 10 −4 to 10
-6 ohm · cm, for example, a metal having a very small specific resistance such as Ag, Au, Cu, and Al, or Pd for Ag, for example, 2 to 20 for Ag.
A mixture by weight%, TiN and ZrB 2 and metal compounds.
【００１２】層の厚みに関しては、導電性金属酸化物が
100〜1000オングストローム（Å）、好ましくは200〜60
0Å、高導電性材料が50〜400Å、好ましくは100〜300Å
程度である。３層全体では250〜2400Å、好ましくは500
〜1500Å程度である。透明性を維持する上では薄い膜で
ある方が好ましいが、導電性や化学的安定性を考慮する
と薄過ぎるのは好ましくない。Regarding the thickness of the layer, the conductive metal oxide
100-1000 angstroms (Å), preferably 200-60
0Å, high conductive material 50 ~ 400Å, preferably 100 ~ 300Å
It is about. 250 to 2400Å for all three layers, preferably 500
It is about 1500Å. It is preferable that the film be a thin film in order to maintain transparency, but it is not preferable that the film is too thin in consideration of conductivity and chemical stability.
【００１３】発光層に使用される有機化合物としては、
有機ＥＬ素子の発光層に使用するものとして知られてい
る有機化合物（特開平5-159882号、特開昭63-295695
号、及び特開平3-231970号公報参照。）、例えばトリス
（８−キノリノール）アルミニウム（以下、「Alq」と
略称する。）等が採用されるが、今後開発され有機化合
物であっても発光能を示すものであれば採用可能であ
る。又、発光層を形成する方法もそれ自体公知の方法、
例えば蒸着法、スピンコート法、キャスト法、ＬＢ法等
を採用すればよい。今後、開発される発光層の形成方法
も採用可能である。The organic compound used in the light emitting layer includes:
Organic compounds known to be used in the light emitting layer of an organic EL device (JP-A-5-159882, JP-A-63-295695)
And JP-A-3-231970. For example, tris (8-quinolinol) aluminum (hereinafter abbreviated as “Alq”) or the like is employed, but any organic compound that will be developed in the future can be employed as long as it exhibits luminous ability. Also, a method for forming the light emitting layer is a method known per se,
For example, an evaporation method, a spin coating method, a casting method, an LB method, or the like may be employed. In the future, a method for forming a light emitting layer to be developed can be adopted.
【００１４】発光層の厚みは特に制限は無く、又正孔輸
送層及び／又は電子輸送層を兼ねるものもありそれによ
っても異なるが、必要により適宜選択すればよく、通常
その厚みは50〜2000Å、好ましくは200〜1000Å程度で
ある。The thickness of the light-emitting layer is not particularly limited, and may also serve as a hole transporting layer and / or an electron transporting layer. The thickness varies depending on the type, but may be appropriately selected as necessary. And preferably about 200 to 1000 °.
【００１５】正孔輸送層の材料としては、従来から光導
電材料の正孔輸送層の有機材料として知られているもの
や、有機ＥＬ素子の正孔輸送層に使用するものとして知
られているもの（特開平5-159882号公報、米国特許第3,
567,450号明細書等参照。）、例えばN,N'-ジフェニル-
(3-メチルフェニル)-1,1'-ビフェニル-4,4'-ジアミン
（以下、「TPD」と略称する。）を代表とする一群の化
合物や、ポリ-N-ビニルカルバゾル（以下、「PVCZ」と
略称する。）等の中から選択することも出来るし、正孔
の注入及び電子の障壁性の何れかを有するものであれば
今後開発される材料であってもよい。その形成方法とし
てそれ自体公知の方法、例えば真空蒸着法、スピンコー
ト法、キャスト法、ＬＢ法等で薄膜を形成すればよい。
薄膜層の厚みは、50〜2000Å、好ましくは200〜1000Å
程度である。The material of the hole transport layer is conventionally known as an organic material for the hole transport layer of a photoconductive material, or as a material used for the hole transport layer of an organic EL device. Things (JP-A-5-159882, U.S. Pat.
See 567,450 and the like. ), For example N, N'-diphenyl-
A group of compounds represented by (3-methylphenyl) -1,1′-biphenyl-4,4′-diamine (hereinafter abbreviated as “TPD”) and poly-N-vinylcarbazole (hereinafter, referred to as “TPD”) "PVCZ") and the like, or a material to be developed in the future may be used as long as it has either hole injection or electron barrier properties. The thin film may be formed by a method known per se, for example, a vacuum deposition method, a spin coating method, a casting method, an LB method, or the like.
The thickness of the thin film layer is 50 to 2000 mm, preferably 200 to 1000 mm.
It is about.
【００１６】陰極材料としては、従来から有機ＥＬ素子
の陰極材料として知られているものを採用することが出
来る（特開平6-326354号、特開平5-198380号、特開昭63
-295695号公報等参照。）。例えば、仕事関数の小さな
金属や合金（MgAg、MgAl、MgIn、InLi等合金等。）が使
用される。As the cathode material, those conventionally known as cathode materials for organic EL devices can be employed (Japanese Patent Application Laid-Open Nos. 6-326354, 5-198380, and 63/1988).
-295695. ). For example, a metal or an alloy having a small work function (an alloy such as MgAg, MgAl, MgIn, and InLi) is used.
【００１７】[0017]
【発明の作用】有機ＥＬ素子の陽極として本発明の３層
構造、場合により２層構造をとることにより、化学的安
定性と高導電性の両方が可能となるので、これを使用す
ることにより、環境安定性、長期信頼性の高い、画面の
輝度が均一な有機ＥＬ素子が得られる。According to the present invention, the chemical stability and the high conductivity can be achieved by using the three-layer structure of the present invention and, in some cases, the two-layer structure as the anode of the organic EL device. An organic EL device having high environmental stability, long-term reliability, and uniform screen luminance can be obtained.
【００１８】[0018]
【実施例】次に、実施例により本発明の有機ＥＬ素子の
陽極構造について具体的に説明する。EXAMPLES Next, the anode structure of the organic EL device of the present invention will be specifically described with reference to examples.
【００１９】（実施例１）図１に示すような構成で有機
ＥＬ素子を形成した。陽極部分に関しては、ガラス基板
上にスパッターにより、順にZnOを400オングストローム
（Å）、Agを150Å及びZnOを400Å積層した。その上
に、スピンコートで正孔輸送層としてTPDとPVCZの混合
物（50/50重量％）を600Å、次いで、その上に発光層と
してAlqを600Å積層した。その上に、陰極として蒸着に
よりMgAg合金を2000Å形成せしめた。試料Ａとする。(Example 1) An organic EL device was formed with a structure as shown in FIG. With respect to the anode part, ZnO was sequentially laminated on a glass substrate by sputtering to 400 angstrom (Å), Ag to 150 を, and ZnO to 400 Å. On top of this, a mixture of TPD and PVCZ (50/50% by weight) was deposited as a hole transport layer by spin coating at a thickness of 600 °, and then Alq was deposited thereon as a light emitting layer at a thickness of 600 °. Then, a 2000 mm MgAg alloy was formed as a cathode by vapor deposition. Let it be Sample A.
【００２０】（実施例２）ガラス基板上にスパッターに
より、順にBi2O3を400Å、Auを150Å及びBi2O3を400Å
積層した。次いで、その上に実施例１と同様の方法で、
順に正孔輸送層、発光層及び陰極を形成した。試料Ｂと
する。Example 2 Bi 2 O 3 , Au 150 ° and Bi 2 O 3 400 ° were sequentially formed on a glass substrate by sputtering.
Laminated. Then, on it, in the same manner as in Example 1,
A hole transport layer, a light emitting layer and a cathode were formed in this order. Let it be Sample B.
【００２１】（実施例３）ガラス基板上にスパッターに
より、順にTiO2を400Å、Agを150Å及びTiO2を400Å積
層した。次いで、その上に実施例１と同様の方法で、順
に正孔輸送層、発光層及び陰極を形成した。試料Ｃとす
る。Example 3 TiO 2 , Ag 150 °, and TiO 2 400 ° were sequentially laminated on a glass substrate by sputtering. Next, a hole transport layer, a light emitting layer, and a cathode were sequentially formed thereon in the same manner as in Example 1. Let it be Sample C.
【００２２】（実施例４）ガラス基板上にスパッターに
より、順にTiO2を400Å、TiNを150Å及びTiO2を400Å積
層した。次いで、その上に実施例１と同様の方法で、順
に正孔輸送層、発光層及び陰極を形成した。試料Ｄとす
る。(Example 4) TiO 2 , TiN 150 ° and TiO 2 400 ° were sequentially laminated on a glass substrate by sputtering. Next, a hole transport layer, a light emitting layer, and a cathode were sequentially formed thereon in the same manner as in Example 1. Let it be sample D.
【００２３】（実施例５）ガラス基板上にスパッターに
より、順にTiO2を400Å、Cuを150Å及びTiO2を400Å積
層した。次いで、その上に実施例１と同様の方法で、順
に正孔輸送層、発光層及び陰極を形成した。試料Ｅとす
る。(Example 5) TiO 2 , Cu 150 ° and TiO 2 400 ° were sequentially laminated on a glass substrate by sputtering. Next, a hole transport layer, a light emitting layer, and a cathode were sequentially formed thereon in the same manner as in Example 1. Let it be sample E.
【００２４】（実施例６）ガラス基板上にスパッターに
より、順にTiO2を400Å、Agを150Å及びZnOを400Å積層
した。次いで、その上に実施例１と同様の方法で、順に
正孔輸送層、発光層及び陰極を形成した。試料Ｆとす
る。Example 6 TiO 2 , Ag 150 ° and ZnO 400 ° were sequentially laminated on a glass substrate by sputtering. Next, a hole transport layer, a light emitting layer, and a cathode were sequentially formed thereon in the same manner as in Example 1. Let it be Sample F.
【００２５】（実施例７）ガラス基板上にスパッターに
より、順にGaを5重量％含むZnOを400Å、Agを150Å及び
Gaを5重量％含むZnOを400Å積層した。次いで、その上
に実施例１と同様の方法で、順に正孔輸送層、発光層及
び陰極を形成した。試料Ｇとする。(Example 7) ZnO containing 5% by weight of Ga was sequentially deposited on a glass substrate by sputtering at 400 ° C, Ag at 150 ° C, and
400% of ZnO containing 5% by weight of Ga was laminated. Next, a hole transport layer, a light emitting layer, and a cathode were sequentially formed thereon in the same manner as in Example 1. Let it be Sample G.
【００２６】（比較例）ガラス基板上に、スパッター法
により、ＩＴＯを1000Å積層した。次いで、その上に実
施例１と同様の方法で、順に正孔輸送層、発光層及び陰
極を形成した。試料Ｈとする。(Comparative Example) ITO was laminated on a glass substrate to a thickness of 1000 ° by a sputtering method. Next, a hole transport layer, a light emitting layer, and a cathode were sequentially formed thereon in the same manner as in Example 1. Let it be Sample H.
【００２７】（発光特性試験）上記実施例及び比較例で
調製された試料Ａ〜Ｈについて発光特性試験を行った。
陰極と陽極間に５mＡの直流を流して、輝度の経時変化
を測定した。この結果を図２に示す。図２から、本発明
品（３層構造の陽極）は何れも比較例に比べて長時間輝
度を保つことが分かった。(Emission Characteristics Test) Emission characteristics tests were performed on the samples A to H prepared in the above Examples and Comparative Examples.
A 5 mA direct current was passed between the cathode and the anode, and the change over time in luminance was measured. The result is shown in FIG. From FIG. 2, it was found that all of the products of the present invention (anode having a three-layer structure) maintain luminance for a longer time than the comparative examples.
【００２８】本発明によれば、従来法に比較して高輝度
が得られ、特に黒点の発生成長を抑制する高い環境安定
性及び良好な成膜性が得られ、素子作成の安定性が増
し、連続発光試験による輝度の減衰率が小さくなる等々
の利点を有する。According to the present invention, higher luminance can be obtained as compared with the conventional method, and particularly, high environmental stability and good film-forming properties for suppressing the generation and growth of black spots can be obtained, and the stability of device fabrication can be increased. This has the advantage that the decay rate of the luminance by the continuous light emission test is reduced.
【００２９】[0029]
【発明の効果】本発明は、有機ＥＬ素子の陽極として上
記特定の３つの層、場合により２つの層を含むものであ
り、これにより従来技術に比較して正孔輸送層との接着
性を高め、又低抵抗値を示し画面の輝度が均一化すると
共に長時間輝度を保つことが出来る。According to the present invention, the anode of the organic EL device includes the above-mentioned three specific layers and, in some cases, two layers, whereby the adhesiveness to the hole transport layer is improved as compared with the prior art. The brightness of the screen is increased, and the brightness of the screen is made uniform, and the brightness can be maintained for a long time.
【図１】代表的な有機ＥＬ素子の構成図である。FIG. 1 is a configuration diagram of a typical organic EL element.
【図２】本発明の実施例及び比較例で得られた試料につ
いての有機ＥＬ素子輝度の経時変化を示すグラフであ
る。縦軸は輝度（cd/m2）、横軸は時間（ｈ）を表す。FIG. 2 is a graph showing the change over time of the luminance of the organic EL element for the samples obtained in Examples and Comparative Examples of the present invention. The vertical axis represents luminance (cd / m 2 ), and the horizontal axis represents time (h).
１ 陰極（金属電極） ２ 陽極（透明電極） ３ 有機発光層 ４ 正孔輸送層 ５ ガラス基板 DESCRIPTION OF SYMBOLS 1 Cathode (metal electrode) 2 Anode (transparent electrode) 3 Organic light emitting layer 4 Hole transport layer 5 Glass substrate
Claims (4)
性金属酸化物の３層、又は高導電性材料及び導電性金属
酸化物（発光層側）の２層を含有することを特徴とする
有機エレクトロルミネッセンス素子の陽極。1. A layer comprising three layers of a conductive metal oxide, a highly conductive material and a conductive metal oxide, or two layers of a highly conductive material and a conductive metal oxide (light emitting layer side). Anode of the organic electroluminescence element.
下であり、高導電性材料の比抵抗値が１×１０-4ohm・cm
以下である請求項１記載の陽極。2. The conductive metal oxide has a specific resistance of 1 ohm · cm or less, and the high conductive material has a specific resistance of 1 × 10 −4 ohm · cm.
The anode according to claim 1, wherein:
O3、Gaを添加したZnO及びIn2O3の１種又は２種以上の混
合物を含み、高導電性材料がAg、Au、Cu、Al、AgとPdの
混合物、TiN及びZrB2の１種又は２種以上の混合物を含
む請求項１記載の陽極。3. The conductive metal oxide is composed of SnO 2 , ZnO, TiO 2 , Bi 2
It contains one or a mixture of two or more of ZnO and In 2 O 3 to which O 3 and Ga are added, and the highly conductive material is Ag, Au, Cu, Al, a mixture of Ag and Pd, and one of TiN and ZrB 2 . The anode according to claim 1, comprising a species or a mixture of two or more species.
層、有機発光層及び陰極を含む有機エレクトロルミネッ
センス素子。4. An organic electroluminescence device comprising the anode according to claim 1, a hole transport layer, an organic light emitting layer and a cathode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9130267A JPH10308285A (en) | 1997-05-01 | 1997-05-01 | Organic electroluminescent element and electrode structure thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9130267A JPH10308285A (en) | 1997-05-01 | 1997-05-01 | Organic electroluminescent element and electrode structure thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH10308285A true JPH10308285A (en) | 1998-11-17 |
Family
ID=15030208
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9130267A Pending JPH10308285A (en) | 1997-05-01 | 1997-05-01 | Organic electroluminescent element and electrode structure thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH10308285A (en) |
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| JP2002015859A (en) * | 2000-06-30 | 2002-01-18 | Sony Corp | Organic electroluminescent element and organic electroluminescent display device |
| JP2003115393A (en) * | 2001-10-02 | 2003-04-18 | Sony Corp | Organic electroluminescence element and its manufacturing method, image display equipment |
| US6774561B2 (en) | 2001-01-15 | 2004-08-10 | Sony Corporation | Light-emitting device and process for production thereof having an emission laser held between electrodes |
| KR100512626B1 (en) * | 2002-10-18 | 2005-09-02 | 엘지.필립스 엘시디 주식회사 | Organic Electro luminescence Device and fabrication method of thereof |
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| US6774561B2 (en) | 2001-01-15 | 2004-08-10 | Sony Corporation | Light-emitting device and process for production thereof having an emission laser held between electrodes |
| JP2003115393A (en) * | 2001-10-02 | 2003-04-18 | Sony Corp | Organic electroluminescence element and its manufacturing method, image display equipment |
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| FR2919428A1 (en) * | 2007-07-27 | 2009-01-30 | Univ Nantes Etablissement Publ | OPTOELECTRONIC COMPONENT ELECTRODE COMPRISING AT LEAST ONE LAYER OF A TRANSPARENT OXIDE COATED WITH A METAL LAYER AND CORRESPONDING OPTOELECTRONIC COMPONENT. |
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