JPH10300831A - Magnetic sensor - Google Patents
Magnetic sensorInfo
- Publication number
- JPH10300831A JPH10300831A JP9118777A JP11877797A JPH10300831A JP H10300831 A JPH10300831 A JP H10300831A JP 9118777 A JP9118777 A JP 9118777A JP 11877797 A JP11877797 A JP 11877797A JP H10300831 A JPH10300831 A JP H10300831A
- Authority
- JP
- Japan
- Prior art keywords
- wire
- magnetic
- amorphous
- magnetic field
- voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000035699 permeability Effects 0.000 claims abstract description 24
- 239000000463 material Substances 0.000 claims abstract description 20
- 230000035945 sensitivity Effects 0.000 abstract description 12
- 230000004907 flux Effects 0.000 abstract description 10
- 238000001514 detection method Methods 0.000 abstract description 8
- 239000000696 magnetic material Substances 0.000 abstract description 2
- 229910000889 permalloy Inorganic materials 0.000 abstract description 2
- 230000005389 magnetism Effects 0.000 abstract 1
- 239000000758 substrate Substances 0.000 description 7
- 230000005381 magnetic domain Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 230000005415 magnetization Effects 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 3
- 230000002269 spontaneous effect Effects 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- 229910000990 Ni alloy Inorganic materials 0.000 description 2
- 229910001252 Pd alloy Inorganic materials 0.000 description 2
- 229910000808 amorphous metal alloy Inorganic materials 0.000 description 2
- 230000002500 effect on skin Effects 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- SWELZOZIOHGSPA-UHFFFAOYSA-N palladium silver Chemical compound [Pd].[Ag] SWELZOZIOHGSPA-UHFFFAOYSA-N 0.000 description 2
- 229910000859 α-Fe Inorganic materials 0.000 description 2
- 229910000976 Electrical steel Inorganic materials 0.000 description 1
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Landscapes
- Measuring Magnetic Variables (AREA)
- Hall/Mr Elements (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明はアモルファス磁性ワ
イヤを使用した磁気センサに関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetic sensor using an amorphous magnetic wire.
【０００２】[0002]
【従来の技術】アモルファス合金ワイヤとして、自発磁
化の方向がワイヤ周方向に対し互いに逆方向の磁区が交
互に磁壁で隔てられた構成の外殻部を有する、零磁歪乃
至は負磁歪のアモルファス合金ワイヤが開発されてい
る。例えば、Ｃｏ70．5Ｂ15Ｓｉ10Ｆｅ4が開発されてい
る。2. Description of the Related Art As an amorphous alloy wire, a zero magnetostrictive or negative magnetostrictive amorphous alloy having an outer shell portion in which magnetic domains whose spontaneous magnetization directions are opposite to each other in the circumferential direction of the wire are alternately separated by domain walls. Wire is being developed. For example, Co 70 . 5 B 15 Si 10 Fe 4 has been developed.
【０００３】かかる零磁歪乃至は負磁歪のアモルファス
磁性ワイヤに高周波電流したときに発生するワイヤ両端
間出力電圧中のインダクタンス電圧分は、ワイヤの横断
面内に生じる円周方向磁束によって上記の円周方向に易
磁化性の外殻部が円周方向に磁化されることに起因し、
従って、周方向透磁率μθも同外殻部の円周方向の磁化
に依存する。[0003] The inductance voltage component in the output voltage across the wire generated when a high-frequency current is applied to the zero-magnetostriction or negative-magnetostriction amorphous magnetic wire is determined by the circumferential magnetic flux generated in the cross section of the wire. Due to the fact that the magnetizable outer shell is magnetized in the circumferential direction,
Therefore, the circumferential magnetic permeability μθ also depends on the circumferential magnetization of the outer shell.
【０００４】この通電中のアモルファスワイヤにワイヤ
軸方向の外部磁界を作用させると、上記通電による円周
方向磁束と外部磁束との合成により、上記円周方向に易
磁化性を有する外殻部に作用する磁束の方向が円周方向
からずれ、それだけ円周方向への磁化が生じ難くなり、
上記周方向透磁率μθが変化し、上記インダクタンス電
圧分が変動することになる。。When an external magnetic field is applied to the energized amorphous wire in the direction of the wire axis, the magnetic flux in the circumferential direction and the external magnetic flux generated by the energization are combined to form an outer shell portion having magnetizability in the circumferential direction. The direction of the acting magnetic flux deviates from the circumferential direction, so that magnetization in the circumferential direction becomes less likely to occur,
The circumferential magnetic permeability μθ changes, and the inductance voltage changes. .
【０００５】更に、上記通電電流の周波数がMHzオ−ダ
になると、高周波表皮効果を無視し得なくなり、表皮深
さδ＝（２ρ／wμθ）1/2（μθは前記した通り、円周
方向透磁率、ρは電気抵抗率、wは角周波数)がμθによ
り変化し、このμθが前記した通り、外部磁界によって
変化するので、ワイヤ両端間出力電圧中の抵抗電圧分も
外部磁界で変動するようになる。Furthermore, the frequency of the energizing current MHz O - When Da, as no longer be ignored high-frequency skin effect, skin depth δ = (2ρ / wμθ) 1 /2 (μθ is mentioned above, circumferential The magnetic permeability, ρ is the electrical resistivity, w is the angular frequency) changes with μθ, and μθ changes with the external magnetic field as described above, so that the resistance voltage component in the output voltage across the wire also fluctuates with the external magnetic field. Become like
【０００６】そこで、ワイヤ両端間出力電圧、すなわ
ち、外部磁界による上記インダクタンス電圧分と抵抗電
圧分の合成電圧の変動（以下、外部磁界によるこの出力
電圧の変動をインピ−ダンス効果といい、インダクタン
ス成分の変動をインダクタンス効果という）から外部磁
界を検出することが提案されている（特開平７−１８１
２３９号）。Therefore, the output voltage across the wire, that is, the variation of the combined voltage of the inductance voltage and the resistance voltage due to the external magnetic field (hereinafter, the variation of the output voltage due to the external magnetic field is called an impedance effect, It has been proposed to detect an external magnetic field from the fluctuation of the magnetic field (referred to as inductance effect) (Japanese Patent Laid-Open No. 7-181).
No. 239).
【０００７】[0007]
【発明が解決しようとする課題】上記インピ−ダンス効
果を利用した磁気センサは、従来の巻線誘導検出再生磁
気ヘッドに代替するものとして、オ−ディオテ−プレコ
−ダ、ビデオテ−プレコ−ダ、コンピュ−タ、ロ−タリ
エンコ−ダ−等の分野で実用化が期待されている。この
実用化のためには、上記外部磁界に対する検出感度（Ｓ
／Ｎ比）を充分に高くする必要があり、このため、上記
アモルファスワイヤに直流または時間的に変化する電流
を通電した状態で、焼鈍することが提案されている（特
開平６−１７６９３０号公報）。しかしながら、この提
案はワイヤ加工面からの解決手段であり、加工面での制
約を免れ得ない。The magnetic sensor utilizing the above-described impedance effect can be replaced by an audio pre-recorder, a video tape pre-recorder, or an audio pre-recorder, as an alternative to the conventional magnetic induction magnetic head for detecting and reproducing winding induction. Practical use is expected in the fields of computers, rotary encoders and the like. For this practical application, the detection sensitivity (S
/ N ratio) needs to be sufficiently high. For this reason, it has been proposed to perform annealing while applying a direct current or a time-varying current to the amorphous wire (JP-A-6-176930). ). However, this proposal is a solution from the wire processing surface, and cannot avoid the restriction on the processing surface.
【０００８】本発明の目的は、アモルファス磁性ワイヤ
に電流を流し、ワイヤの軸方向外部磁界を上記インピ−
ダンス効果によって検出する場合、部材の簡易な付加の
みで外部磁界の検出感度を充分に向上できる磁気センサ
を提供することにある。An object of the present invention is to supply a current to an amorphous magnetic wire and to apply an external magnetic field in the axial direction of the wire to the impedance.
An object of the present invention is to provide a magnetic sensor capable of sufficiently improving the detection sensitivity of an external magnetic field by simply adding a member when detecting by a dance effect.
【０００９】[0009]
【課題を解決するための手段】本願の請求項１に係る磁
気センサは、アモルファス磁性ワイヤに電流を流し、該
電流によりアモルファス磁性ワイヤ両端間に発生する電
圧を検出し、上記ワイヤの軸方向外部磁界を上記検出電
圧の変化から検出する磁気センサにおいて、センサのヘ
ッド部に高透磁率材料を取り付けたことを特徴とする構
成である。本願の請求項２に係る磁気センサは、アモル
ファス磁性ワイヤに電流を流し、該電流によりアモルフ
ァス磁性ワイヤ両端間に発生する電圧を検出し、上記ワ
イヤの軸方向外部磁界を上記検出電圧の変化から検出す
る磁気センサにおいて、基板上に一対の高透磁率材料を
設け、これらの高透磁率材料間に上記アモルファス磁性
ワイヤを接続したことを特徴とする構成である。According to a first aspect of the present invention, there is provided a magnetic sensor in which a current flows through an amorphous magnetic wire, a voltage generated between both ends of the amorphous magnetic wire by the current is detected, and the voltage is detected in the axial direction of the wire. In a magnetic sensor for detecting a magnetic field from the change in the detection voltage, a high magnetic permeability material is attached to a head portion of the sensor. The magnetic sensor according to claim 2 of the present application supplies a current to the amorphous magnetic wire, detects a voltage generated between both ends of the amorphous magnetic wire by the current, and detects an axial external magnetic field of the wire from a change in the detected voltage. In the magnetic sensor described above, a pair of high magnetic permeability materials are provided on a substrate, and the amorphous magnetic wire is connected between these high magnetic permeability materials.
【００１０】[0010]
【発明の実施の形態】以下、図面を参照しつつ本発明の
実施の形態について説明する。図１の（イ）は本発明に
係る一の磁気センサを示す側面図、図１の（ロ）は同じ
く平面図である。図１の（イ）及び図１の（ロ）におい
て、１は零磁歪乃至は負磁歪のアモルファスワイヤであ
り、自発磁化の方向がワイヤ周方向に対し互いに逆方向
の磁区が交互に隔壁で隔てられた外殻部を有している。
２，２はアモルファスワイヤの両端に接続した高透磁率
材料のヘッドで、残留磁気が小で透磁率の高い軟磁性材
料、例えば、パ−マロイ（鉄−ニッケル合金）、けい素
鋼、フェライト等を使用できる。Embodiments of the present invention will be described below with reference to the drawings. FIG. 1A is a side view showing one magnetic sensor according to the present invention, and FIG. 1B is a plan view thereof. In FIG. 1A and FIG. 1B, reference numeral 1 denotes a zero magnetostrictive or negative magnetostrictive amorphous wire, and magnetic domains whose spontaneous magnetization directions are opposite to each other with respect to the circumferential direction of the wire are alternately separated by partition walls. Having an outer shell portion.
Reference numerals 2 and 2 denote high magnetic permeability material heads connected to both ends of the amorphous wire. Soft magnetic materials having low remanence and high magnetic permeability, such as permalloy (iron-nickel alloy), silicon steel, and ferrite Can be used.
【００１１】図２は本発明に係る磁気センサを使用して
外部磁界を検出する回路を示している。図２において、
３は高周波電源であり、この電源３によりアモルファス
ワイヤに電流が流され、ワイヤ両端ａ−ａ’に抵抗電圧
分ｅRとインダクタンス電圧分ｅLとからなる出力電圧が
発生される。４は出力電圧測定回路である。Ｈexはワイ
ヤ軸方向の被検出外部磁界であり、高透磁率材料ヘッド
２の先端端面２１に入る磁束がアモルファスワイヤ１内
を通過する。この場合、高透磁率材料ヘッド２の先端端
面２１の面積をＳ、アモルファスワイヤ１の断面積をｓ
とすると、アモルファスワイヤ１を通過する磁束は、磁
束洩れがないとすれば、高透磁率材料ヘッド無しの場合
に較べてＳ／ｓ（Ｓ／ｓ＝ｋ≫１）倍に増加でき、磁束
洩れがあっても、外部磁界Ｈexを高感度でキャッチでき
る。FIG. 2 shows a circuit for detecting an external magnetic field using the magnetic sensor according to the present invention. In FIG.
Reference numeral 3 denotes a high-frequency power supply. A current flows through the amorphous wire by the power supply 3, and an output voltage including a resistance voltage eR and an inductance voltage eL is generated at both ends aa 'of the wire. Reference numeral 4 denotes an output voltage measuring circuit. Hex is the detected external magnetic field in the wire axis direction, and the magnetic flux entering the tip end face 21 of the high-permeability material head 2 passes through the inside of the amorphous wire 1. In this case, the area of the tip end face 21 of the high-permeability material head 2 is S, and the cross-sectional area of the amorphous wire 1 is s.
Then, if there is no magnetic flux leakage, the magnetic flux passing through the amorphous wire 1 can be increased by S / s (S / s = k 倍 1) times as compared with the case without the high magnetic permeability material head. , The external magnetic field Hex can be caught with high sensitivity.
【００１２】上記の出力電圧の外部磁界Ｈexによる変動
は、アモルファス磁性ワイヤに自発磁化の方向が正周方
向の磁区と負周方向の磁区とが交互に位置してなる外殻
部が存在し、ワイヤを通る軸方向磁界Ｈexによりワイヤ
通電電流による周方向交流磁界がある角度（α°）ずら
され、その磁区の周方向回転が生じ難くなって周方向透
磁率μθが変化されること、及びその周方向透磁率μθ
の変化に伴い表皮深さが変動されること等によるのであ
り、外部磁界Ｈexのキャッチ感度を高くすればするほ
ど、周方向透磁率μθの変化が高感度となってインダク
タンス電圧変動が高感度となり、また、その周方向透磁
率μθの変化の高感度化に伴い高周波表皮効果による抵
抗電圧変動も高感度になるから、外部磁界Ｈexを高感度
でキャッチできる本発明に係る磁気センサにおいては、
その外部磁界を出力電圧の変化により高感度で検出でき
る。The above-mentioned fluctuation of the output voltage due to the external magnetic field Hex is caused by the fact that the amorphous magnetic wire has an outer shell portion in which magnetic domains of spontaneous magnetization are arranged alternately in magnetic domains in the positive circumferential direction and magnetic domains in the negative circumferential direction, The circumferential alternating magnetic field caused by the wire current is shifted by a certain angle (α °) due to the axial magnetic field Hex passing through the wire, so that the circumferential rotation of the magnetic domain is less likely to occur and the circumferential magnetic permeability μθ is changed. Circumferential magnetic permeability μθ
The higher the catch sensitivity of the external magnetic field Hex, the more sensitive the change in the circumferential magnetic permeability μθ and the more sensitive the inductance voltage variation. Also, with the increase in the sensitivity of the change in the circumferential magnetic permeability μθ, the resistance voltage fluctuation due to the high-frequency skin effect also becomes highly sensitive.
The external magnetic field can be detected with high sensitivity by a change in the output voltage.
【００１３】上記高透磁率材料ヘッド２の形状は、先端
側ほど断面積を大とした形状、例えば、図３に示すよう
な、円錐形とすることもできる。断面形状は、矩形等の
四角形、四角形以外の多角形、三角形、円形、楕円形等
の何れであってもよい。上記高透磁率材料ヘッドのアモ
ルファスワイヤへの取付けは、通常、高透磁率材料ヘッ
ドを外面においてワイヤ端部に溶接等で固着することに
より行うが、図３に示すように、高透磁率材料ヘッド２
にワイヤ挿入穴２２を設け、この穴にワイヤ端部を圧入
接触させ、接着剤２３で固定することも可能である。The shape of the high-permeability material head 2 may be a shape having a larger cross-sectional area toward the distal end side, for example, a conical shape as shown in FIG. The cross-sectional shape may be any of a rectangle such as a rectangle, a polygon other than the rectangle, a triangle, a circle, an ellipse, and the like. The attachment of the high-permeability material head to the amorphous wire is usually performed by fixing the high-permeability material head to the end of the wire on the outer surface by welding or the like, as shown in FIG. 2
It is also possible to provide a wire insertion hole 22 at the end, press-fit the wire end into this hole, and fix it with an adhesive 23.
【００１４】図４の（イ）は本発明に係る他の磁気セン
サを示し、絶縁基板、例えば、セラミックス基板４上に
高透磁率材料ヘッド２，２を固着し、これらのヘッド
２，２間にアモルファスワイヤ１を溶接等により接続し
てある。図４の（ロ）は本発明に係る他の磁気センサの
別例を示し、絶縁基板４、例えば、セラミックス基板上
に金属（例えば、銀−パラジウム合金）のコ−ティング
で電極５，５を形成し、各電極５上に高透磁率材料ヘッ
ド２を固着し、これらのヘッド２，２間にアモルファス
ワイヤ１を溶接等により接続してある。FIG. 4A shows another magnetic sensor according to the present invention, in which high magnetic permeability material heads 2 and 2 are fixed on an insulating substrate, for example, a ceramics substrate 4, and the heads 2 are fixed to each other. , An amorphous wire 1 is connected by welding or the like. FIG. 4 (b) shows another example of another magnetic sensor according to the present invention, in which electrodes 5, 5 are coated on an insulating substrate 4, for example, a ceramic substrate by coating a metal (for example, silver-palladium alloy). A high magnetic permeability material head 2 is fixed on each electrode 5 and an amorphous wire 1 is connected between these heads 2 and 2 by welding or the like.
【００１５】上記出力電圧の検出回路としては、図５に
示すように、本発明に係る磁界センサをインダクティブ
素子とするコルピッツ発振回路を組立て、更に、外部磁
界によるこの発振回路の振幅・周波数変調を検波するシ
ョットキダイオ−ドやＲＣ回路を接続してものを使用す
ることができる。また、本発明に係る磁界センサの出力
電圧のインダクタンス電圧成分は抵抗電圧成分に較べ立
上りが鋭いから、フィルタ−に通し、インダクタンス電
圧成分のみを取り出し、このインダクタンス電圧成分を
出力とすることもできる。As a circuit for detecting the output voltage, as shown in FIG. 5, a Colpitts oscillation circuit using a magnetic field sensor according to the present invention as an inductive element is assembled, and further, the amplitude and frequency modulation of this oscillation circuit by an external magnetic field is performed. A device connected to a Schottky diode or an RC circuit for detection can be used. Further, since the inductance voltage component of the output voltage of the magnetic field sensor according to the present invention has a sharp rise as compared with the resistance voltage component, only the inductance voltage component can be taken out through a filter and this inductance voltage component can be output.
【００１６】[0016]
〔実施例１〕アモルファスワイヤには、組成がＣｏ70．
5Ｂ15Ｓｉ10Ｆｅ4で、零磁歪、外径５０μｍφ、長さ２
ｍｍのものを使用した。図４の（ロ）に示すように、セ
ラミックス基板４上に銀−パラジウム合金で電極５，５
を形成し、その電極上に厚み０．５ｍｍ、長さ４．０ｍ
ｍ、巾１．６ｍｍの鉄−５０ニッケル合金プレ−ト２を
固着し、このプレ−ト２，２間に上記アモルファスワイ
ヤ１を溶接した。 〔実施例２〕実施例１に対し、鉄−５０ニッケル合金に
代えフェライトを使用した以外、実施例１と同じにし
た。 〔比較例〕実施例１に対し、鉄−５０ニッケル合金プレ
−トを使用せず、アモルファスワイヤを電極に溶接した
以外、実施例１に同じとした。Example 1 Amorphous wire has a composition of Co 70 .
5 B 15 Si 10 Fe 4 , zero magnetostriction, outer diameter 50 μmφ, length 2
mm. As shown in FIG. 4B, electrodes 5 and 5 are formed on a ceramics substrate 4 with a silver-palladium alloy.
Is formed on the electrode and has a thickness of 0.5 mm and a length of 4.0 m.
An iron-50 nickel alloy plate 2 having a thickness of 1.6 mm and a width of 1.6 mm was fixed, and the amorphous wire 1 was welded between the plates 2 and 2. Example 2 Example 1 was the same as Example 1 except that ferrite was used instead of the iron-50 nickel alloy. [Comparative Example] The same operation as in Example 1 was performed, except that an iron wire was not used and an amorphous wire was welded to the electrode.
【００１７】これらの実施例及び比較例の磁気センサを
図５に示す検出回路に組み込み、発振周波数４０MHz、
ワイヤ電流５mA(p-p)のもとで、ワイヤ軸方向外部磁界
を変化させ、出力電圧が充分な感度で変化するときの磁
界を測定したところ、比較例では４Gであったが、実施
例１では２G、実施例２では２．７Gであり、何れの実施
例品とも比較例品より高感度であることが確認できた。The magnetic sensors of these examples and comparative examples are incorporated in a detection circuit shown in FIG.
When the external magnetic field in the wire axis direction was changed under a wire current of 5 mA (pp), and the magnetic field when the output voltage was changed with sufficient sensitivity was measured, it was 4 G in the comparative example. It was 2 G in Example 2 and 2.7 G in Example 2, and it was confirmed that both Examples had higher sensitivity than Comparative Examples.
【００１８】[0018]
【発明の効果】本発明に係る磁気センサにおいては、零
磁歪乃至は負磁歪のアモルファスワイヤの磁気インピ−
ダンス効果を利用して外部磁界を検出する場合、アモル
ファス端部に高透磁率材料を取り付けるだけでその検出
感度を充分に向上でき、簡易な構造、低コストで高感度
化を達成できる。According to the magnetic sensor of the present invention, the magnetic impedance of a zero magnetostrictive or negative magnetostrictive amorphous wire is improved.
When an external magnetic field is detected by using the dance effect, the detection sensitivity can be sufficiently improved only by attaching a high magnetic permeability material to the amorphous end, and a high sensitivity can be achieved with a simple structure and at low cost.
【図１】図１の（イ）は請求項１に係る磁気センサを示
す側面図、図１の（ロ）は同じく平面図である。FIG. 1A is a side view showing a magnetic sensor according to claim 1, and FIG. 1B is a plan view thereof.
【図２】本発明に係る磁気センサ−の使用状態を示す図
面である。FIG. 2 is a view showing a use state of a magnetic sensor according to the present invention.
【図３】請求項１に係る磁気センサ−の上記とは別の例
の要部を示す断面図である。FIG. 3 is a sectional view showing a main part of another example of the magnetic sensor according to the first embodiment.
【図４】請求項２に係る磁気センサ−の異なる実施例を
示す図面である。FIG. 4 is a drawing showing another embodiment of the magnetic sensor according to claim 2;
【図５】本発明において使用する検出回路の一例を示す
回路図である。FIG. 5 is a circuit diagram illustrating an example of a detection circuit used in the present invention.
【符号の説明】 １ アモルファスワイヤ ２ 高透磁率材料ヘッド ４ 基板[Description of Signs] 1 Amorphous wire 2 High permeability material head 4 Substrate
Claims (2)
電流によりアモルファス磁性ワイヤ両端間に発生する電
圧を検出し、上記ワイヤの軸方向外部磁界を上記検出電
圧の変化から検出する磁気センサにおいて、センサのヘ
ッド部に高透磁率材料を取り付けたことを特徴とする磁
気センサ。1. A magnetic sensor for flowing a current through an amorphous magnetic wire, detecting a voltage generated between both ends of the amorphous magnetic wire by the current, and detecting an external magnetic field in the axial direction of the wire from a change in the detected voltage. A magnetic sensor characterized in that a high magnetic permeability material is attached to a head portion of the magnetic sensor.
電流によりアモルファス磁性ワイヤ両端間に発生する電
圧を検出し、上記ワイヤの軸方向外部磁界を上記検出電
圧の変化から検出する磁気センサにおいて、基板上に一
対の高透磁率材料を設け、これらの高透磁率材料間に上
記アモルファス磁性ワイヤを接続したことを特徴とする
磁気センサ。2. A magnetic sensor for flowing a current through an amorphous magnetic wire, detecting a voltage generated between both ends of the amorphous magnetic wire by the current, and detecting an axial external magnetic field of the wire from a change in the detected voltage. A magnetic sensor, comprising: a pair of high magnetic permeability materials provided thereon; and the amorphous magnetic wire connected between the high magnetic permeability materials.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11877797A JP3752054B2 (en) | 1997-04-22 | 1997-04-22 | Magnetic field detection method and magnetic sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11877797A JP3752054B2 (en) | 1997-04-22 | 1997-04-22 | Magnetic field detection method and magnetic sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH10300831A true JPH10300831A (en) | 1998-11-13 |
| JP3752054B2 JP3752054B2 (en) | 2006-03-08 |
Family
ID=14744827
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11877797A Expired - Fee Related JP3752054B2 (en) | 1997-04-22 | 1997-04-22 | Magnetic field detection method and magnetic sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3752054B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2022190854A1 (en) * | 2021-03-12 | 2022-09-15 | Tdk株式会社 | Magnetic sensor and method for manufacturing same |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5634131A (en) * | 1979-08-29 | 1981-04-06 | Nec Corp | Element for detecting magnetic field |
| JPS59195887A (en) * | 1983-04-21 | 1984-11-07 | Nec Corp | Manufacture of ferromagnetic substance magnetoresistance effect element with yoke |
| JPH07181239A (en) * | 1993-12-22 | 1995-07-21 | Res Dev Corp Of Japan | Magnetic impedance effect element |
| JP3602235B2 (en) * | 1995-11-21 | 2004-12-15 | 内橋エステック株式会社 | Magnetic sensor |
-
1997
- 1997-04-22 JP JP11877797A patent/JP3752054B2/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5634131A (en) * | 1979-08-29 | 1981-04-06 | Nec Corp | Element for detecting magnetic field |
| JPS59195887A (en) * | 1983-04-21 | 1984-11-07 | Nec Corp | Manufacture of ferromagnetic substance magnetoresistance effect element with yoke |
| JPH07181239A (en) * | 1993-12-22 | 1995-07-21 | Res Dev Corp Of Japan | Magnetic impedance effect element |
| JP3602235B2 (en) * | 1995-11-21 | 2004-12-15 | 内橋エステック株式会社 | Magnetic sensor |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2022190854A1 (en) * | 2021-03-12 | 2022-09-15 | Tdk株式会社 | Magnetic sensor and method for manufacturing same |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3752054B2 (en) | 2006-03-08 |
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