JPH10300684A - Device and method for sampling impurity on substrate surface - Google Patents
Device and method for sampling impurity on substrate surfaceInfo
- Publication number
- JPH10300684A JPH10300684A JP11156197A JP11156197A JPH10300684A JP H10300684 A JPH10300684 A JP H10300684A JP 11156197 A JP11156197 A JP 11156197A JP 11156197 A JP11156197 A JP 11156197A JP H10300684 A JPH10300684 A JP H10300684A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- liquid
- liquid supply
- supply means
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、半導体ウエハ等の
基板の表面上の不純物分析を行う際に基板表面の不純物
を採取する装置およびその方法に関する。[0001] 1. Field of the Invention [0002] The present invention relates to an apparatus and a method for collecting impurities on the surface of a substrate such as a semiconductor wafer when analyzing impurities on the surface of the substrate.
【０００２】[0002]
【従来の技術】半導体ウエハ（以下、ウエハと省略す
る）等の基板の表面上の不純物分析を行う場合、例えば
図５（ａ）〜図５（ｃ）に示す方法により行う。すなわ
ち、図５（ａ）に示すように、回転シャフト１１の一端
部に支持された基板支持部材１２上にウエハ１３を載置
し、回転シャフト１１を図示しない駆動手段により回転
することによりウエハ１３を回転させる。2. Description of the Related Art Impurity analysis on the surface of a substrate such as a semiconductor wafer (hereinafter abbreviated as a wafer) is performed by, for example, a method shown in FIGS. 5 (a) to 5 (c). That is, as shown in FIG. 5A, the wafer 13 is placed on a substrate support member 12 supported on one end of a rotating shaft 11, and the rotating shaft 11 is rotated by a driving unit (not shown) to rotate the wafer 13. To rotate.
【０００３】次いで、フッ素樹脂製の支持棒１４ａ内に
ノズル１４ｂが内挿されてなる液供給手段１４の先端を
ウエハ１３の中心部まで移動させ、降下させる。次い
で、ノズル１４ｂから不純物を採取する液体、例えばＨ
Ｆ水溶液、ＨＦおよびＨ2 Ｏ2の水溶液（エッチング
液）を吐出して液供給手段１４とウエハ１３との間をそ
の液滴１５で連続する状態とする。Next, the tip of the liquid supply means 14 in which the nozzle 14b is inserted into the support rod 14a made of fluororesin is moved to the center of the wafer 13 and lowered. Next, a liquid for collecting impurities from the nozzle 14b, for example, H
An aqueous solution of F, an aqueous solution of HF and H 2 O 2 (etching solution) is discharged to make the liquid supply means 14 and the wafer 13 continuous with the droplets 15.
【０００４】次いで、図５（ｂ）に示すように、液供給
手段１４とウエハ１３との間がエッチング液の液滴１５
で連続する状態のまま、液供給手段１４をウエハ１３に
対して相対的に移動させてウエハ１３の周縁部まで走査
させる。このとき、ウエハ１３の表面に存在する不純物
を液滴１５中に取り込む。[0005] Next, as shown in FIG.
The liquid supply means 14 is relatively moved with respect to the wafer 13 to scan the peripheral edge of the wafer 13 while keeping the continuous state. At this time, impurities existing on the surface of the wafer 13 are taken into the droplet 15.
【０００５】次いで、図５（ｃ）に示すように、液供給
手段１４は液滴１５を保持した状態でウエハ１３の上方
に上昇し、再びウエハ１３の中心部の上方まで移動し、
さらに下降して液滴１５をウエハ１３の中心部に接触さ
せる。そして、液供給手段１４から液滴１５を開放して
液供給手段１４を上昇させて移動させる。これにより、
ウエハ１３の中心部に不純物を採取した液滴１５が残
る。その後、ウエハ１３の中心部に残った液滴１５を赤
外線乾燥して濃縮し、この濃縮物について分析を行う。[0005] Next, as shown in FIG. 5 (c), the liquid supply means 14 rises above the wafer 13 while holding the droplets 15 and moves again to above the center of the wafer 13.
Further, the droplet 15 descends to contact the center of the wafer 13. Then, the liquid droplets 15 are released from the liquid supply means 14, and the liquid supply means 14 is raised and moved. This allows
Droplets 15 obtained by collecting impurities remain at the center of the wafer 13. Thereafter, the droplets 15 remaining at the center of the wafer 13 are dried by infrared radiation and concentrated, and the concentrate is analyzed.
【０００６】[0006]
【発明が解決しようとする課題】しかしながら、ウエハ
１３の表面状態により、あるいは何らかのトラブルによ
り、液供給手段１４をウエハ１３に対して相対的に移動
させる際に、図５（ｄ）に示すように、液供給手段１４
から液滴１５が離脱してしまうことがある。However, when the liquid supply means 14 is moved relative to the wafer 13 due to the surface condition of the wafer 13 or due to some trouble, as shown in FIG. , Liquid supply means 14
In some cases, the droplet 15 may be separated from the liquid.
【０００７】この場合、液供給手段１４をウエハ１３に
対して走査させる途中で液滴１５が液供給手段１４から
離脱したときには、ウエハ１３表面に赤外線乾燥の際に
染みが残るので、液滴回収に失敗したことが分かるが、
液供給手段１４をウエハ１３に対して走査させる前に液
滴１５が液供給手段１４から離脱したときには、液滴１
５がウエハ１３の中心部に残るため、図５（ｃ）と同じ
状態となり、赤外線乾燥を行うと作業が正常に行われた
のか、作業中にトラブルが発生したのかの判断ができな
い。したがって、従来の方法によれば、作業中にトラブ
ルが発生したにも拘らず、正常に作業したものとして不
純物分析が行われてしまう恐れがある。In this case, when the droplet 15 is separated from the liquid supply unit 14 while the liquid supply unit 14 is scanning the wafer 13, a stain remains on the surface of the wafer 13 during infrared drying. It turns out that it failed,
When the droplet 15 separates from the liquid supply unit 14 before the liquid supply unit 14 scans the wafer 13, the droplet 1
5 remains in the center of the wafer 13, so that the state is the same as that shown in FIG. 5C. If infrared drying is performed, it cannot be determined whether the operation has been performed normally or a trouble has occurred during the operation. Therefore, according to the conventional method, there is a possibility that impurity analysis may be performed assuming that the operation was performed normally despite the occurrence of a trouble during the operation.
【０００８】本発明はかかる点に鑑みてなされたもので
あり、作業中にトラブルが発生したかどうかの判断を容
易に行うことができ、基板上の不純物分析を正確に行う
ことができる基板表面の不純物を採取する装置およびそ
の方法を提供することを目的とする。SUMMARY OF THE INVENTION The present invention has been made in view of the foregoing, and it is possible to easily determine whether or not a trouble has occurred during a work, and to accurately analyze impurities on a substrate. It is an object of the present invention to provide a device and a method for collecting impurities.
【０００９】[0009]
【課題を解決するための手段】上記課題を解決するため
に、以下の手段を講じた。本発明は、基板表面に存在す
る不純物を採取する装置であって、基板表面を水平にし
た状態で基板を支持する基板支持手段と、前記基板支持
手段を回転させる回転手段と、前記基板表面上の不純物
を採取する液体を前記基板に供給する液供給手段と、前
記液供給手段の先端と前記基板表面との間が前記液体で
連続した状態で前記基板と前記液供給手段とを相対的に
移動させる移動手段と、前記連続した状態の液体にレー
ザ光を照射するレーザ光照射手段と、前記連続した状態
の液体を通過したレーザ光を受光する受光手段と、を具
備することを特徴とする基板表面の不純物を採取する装
置を提供する。Means for Solving the Problems In order to solve the above problems, the following measures have been taken. The present invention is an apparatus for collecting impurities present on a substrate surface, wherein the substrate supporting means supports the substrate while the substrate surface is horizontal, a rotating means for rotating the substrate supporting means, Liquid supply means for supplying a liquid for collecting impurities of the substrate to the substrate, and the substrate and the liquid supply means are relatively moved in a state where the liquid is continuously provided between the tip of the liquid supply means and the substrate surface. Moving means for moving, laser light irradiating means for irradiating the liquid in the continuous state with laser light, and light receiving means for receiving the laser light passing through the liquid in the continuous state. Provided is an apparatus for collecting impurities on a substrate surface.
【００１０】この構成によれば、作業にトラブルが発生
して液滴が基板表面上を走査されない場合を確実に検知
することができる。したがって、不純物分析の信頼性を
向上させることができる。また、レーザ光を照射させる
構成であるので、比較的簡易にしかも安価で実現するこ
とができる。According to this configuration, it is possible to reliably detect a case where a trouble occurs in the work and the droplet is not scanned on the substrate surface. Therefore, the reliability of the impurity analysis can be improved. In addition, since the laser beam is irradiated, it can be realized relatively easily and at low cost.
【００１１】また、本発明は、基板表面に存在する不純
物を採取する方法であって、基板表面を水平にした状態
で基板を回転させる工程と、基板表面上の不純物を採取
する液体を前記基板表面に供給して液供給手段の先端と
前記基板表面との間が前記液体で連続した状態にする工
程と、前記液体で連続した状態で前記基板と前記液供給
手段とを相対的に移動させる工程と、前記連続した状態
の液体にレーザ光を照射して前記連続した状態の液体を
通過したレーザ光を受光する工程と、を具備することを
特徴とする基板表面の不純物を採取する方法を提供す
る。The present invention also provides a method for collecting impurities present on a substrate surface, the method comprising: rotating the substrate while keeping the substrate surface horizontal; A step of supplying the liquid to the surface to make the space between the tip of the liquid supply means and the surface of the substrate continuous with the liquid; and moving the substrate and the liquid supply means relative to each other while the liquid is continuous. And a step of irradiating the liquid in the continuous state with laser light and receiving the laser light passing through the liquid in the continuous state, a method of collecting impurities on the substrate surface, comprising: provide.
【００１２】この構成によれば、誤作業発見のために人
が立ち合わなくても、作業にトラブルが発生して液滴が
基板表面上を走査されない場合を確実に検知することが
できる。したがって、不純物分析の信頼性を向上させる
ことができる。また、レーザ光を照射させる構成である
ので、エッチング液が汚染することがない。[0012] According to this configuration, even if a person does not stand due to the detection of an erroneous operation, it is possible to reliably detect a case where a trouble occurs in the operation and the droplet is not scanned on the substrate surface. Therefore, the reliability of the impurity analysis can be improved. In addition, since the structure is such that laser light is irradiated, there is no contamination of the etchant.
【００１３】本発明の方法において、液供給手段が前記
基板の周縁部に位置したときに、前記連続した状態の液
体にレーザ光を照射して前記連続した状態の液体を通過
したレーザ光を受光することが好ましい。In the method of the present invention, when the liquid supply means is located at the peripheral edge of the substrate, the liquid in the continuous state is irradiated with laser light to receive the laser light passing through the liquid in the continuous state. Is preferred.
【００１４】[0014]
【発明の実施の形態】以下、本発明の実施の形態を添付
図面を参照して詳細に説明する。図１は本発明の基板表
面の不純物を採取する装置を示す概略図である。本発明
の装置は、回転シャフト１と、回転シャフトの一端部に
支持された基板支持部材２と、基板支持部材２と共に回
転シャフト１を回転させる駆動手段４と、不純物を採取
する液体、例えばＨＦ水溶液、ＨＦおよびＨ2 Ｏ2 の水
溶液（エッチング液）を吐出する液供給手段５とから主
に構成されている。そして、基板支持部材２上には、表
面の不純物分析に供される基板、例えば半導体ウエハ３
が載置される。Embodiments of the present invention will be described below in detail with reference to the accompanying drawings. FIG. 1 is a schematic view showing an apparatus for collecting impurities on a substrate surface according to the present invention. The apparatus of the present invention includes a rotating shaft 1, a substrate supporting member 2 supported at one end of the rotating shaft, a driving unit 4 for rotating the rotating shaft 1 together with the substrate supporting member 2, and a liquid for collecting impurities, for example, HF. A liquid supply means 5 for discharging an aqueous solution, an aqueous solution of HF and H 2 O 2 (etching liquid). Then, on the substrate supporting member 2, a substrate to be subjected to surface impurity analysis, for example, a semiconductor wafer 3
Is placed.
【００１５】液供給手段５は、略Ｌ字形状を有する支持
棒５ａと、支持棒５ａ内に挿入されたノズル５ｂとから
構成されている。また、この液供給手段５は、図示しな
い駆動手段により、水平移動、回転移動、昇降移動可能
に構成されている。したがって、液供給手段５を基板表
面に近接させ、ノズル５ｂからエッチング液を吐出し
て、液供給手段５と基板との間をエッチング液の液滴で
連続する状態として、そのまま液供給手段５を基板に対
して相対的に走査するようになっている。The liquid supply means 5 comprises a substantially L-shaped support rod 5a and a nozzle 5b inserted into the support rod 5a. The liquid supply means 5 is configured to be horizontally movable, rotatable, and vertically movable by a driving means (not shown). Therefore, the liquid supply means 5 is brought close to the substrate surface, the etching liquid is discharged from the nozzle 5b, and the liquid supply means 5 is kept in a state where the liquid supply means 5 and the substrate are continuously connected by the droplets of the etching liquid. Scanning is performed relatively to the substrate.
【００１６】また、基板周縁近傍には、レーザ光出射手
段（図示せず）およびレーザ光受光手段７が配置されて
おり、レーザ光出射手段からレーザ光Ｌを出射して液滴
に照射し、液滴６を通過したレーザ光を受光手段７で受
光するように構成されている。A laser light emitting means (not shown) and a laser light receiving means 7 are disposed near the periphery of the substrate, and emit laser light L from the laser light emitting means to irradiate a droplet. The laser light passing through the droplet 6 is received by the light receiving means 7.
【００１７】次に、上記構成の装置を用いて基板表面の
不純物を採取する方法について説明する。まず、基板で
あるウエハ３を基板支持部材２上に載置し、回転シャフ
ト１を駆動手段４により回転させることにより、基板支
持部材２およびウエハ３を回転させる。Next, a method for collecting impurities on the substrate surface using the above-described apparatus will be described. First, the wafer 3 as a substrate is placed on the substrate supporting member 2, and the rotating shaft 1 is rotated by the driving unit 4 to rotate the substrate supporting member 2 and the wafer 3.
【００１８】次いで、液供給手段５の先端をウエハ３の
中心部まで移動させ、降下させる。次いで、図１（ａ）
に示すように、ノズル５ｂからエッチング液を吐出して
液供給手段５とウエハ３との間をその液滴６で連続する
状態とする。Next, the tip of the liquid supply means 5 is moved to the center of the wafer 3 and lowered. Next, FIG.
As shown in (5), the etching liquid is discharged from the nozzle 5b to make the liquid supply means 5 and the wafer 3 continuous with the droplet 6.
【００１９】次いで、図１（ｂ）に示すように、液供給
手段５とウエハ３との間がエッチング液の液滴６で連続
する状態のまま、液供給手段５をウエハ３に対して相対
的に移動させてウエハ３の周縁部まで走査させる。この
とき、ウエハ３の表面に存在する不純物を液滴６中に取
り込む。Next, as shown in FIG. 1B, the liquid supply means 5 is moved relative to the wafer 3 while the liquid supply means 5 and the wafer 3 are continuously connected by the etching liquid droplets 6. To move the wafer 3 to the peripheral edge of the wafer 3. At this time, impurities present on the surface of the wafer 3 are taken into the droplet 6.
【００２０】次いで、液供給手段５とウエハ３との間が
エッチング液の液滴で連続した状態で走査が行われたど
うかを確認する。これは、図１（ｂ）および図２に示す
ように、レーザ光Ｌをレーザ出射手段から出射して液滴
６に照射する。液供給手段５に液滴６が追従しているな
らば、レーザ光Ｌは液滴６に入射する際に屈折し、ウエ
ハ３表面に到達したときに反射し、さらに液滴６から出
る際に屈折する。Next, it is confirmed whether or not the scanning has been performed in a state where the space between the liquid supply means 5 and the wafer 3 is continuous with the droplets of the etching liquid. In this case, as shown in FIGS. 1B and 2, the laser beam L is emitted from the laser emitting unit and is irradiated on the droplet 6. If the droplet 6 is following the liquid supply means 5, the laser light L is refracted when entering the droplet 6, reflected when reaching the surface of the wafer 3, and when exiting from the droplet 6. Bend.
【００２１】このように液滴６から出たレーザ光Ｌを受
光素子等で構成された受光手段７で受光する。このよう
に受光手段にレーザ光Ｌが受光されたときに、液供給手
段５とウエハ３との間がエッチング液の液滴６で連続し
た状態で走査されたことを確認することができる。The laser beam L emitted from the droplet 6 is received by the light receiving means 7 comprising a light receiving element or the like. Thus, when the laser beam L is received by the light receiving unit, it can be confirmed that the scanning between the liquid supply unit 5 and the wafer 3 is continuously performed by the droplet 6 of the etching liquid.
【００２２】具体的に、液供給手段５とウエハ３との間
に液滴６が存在する場合には、図４（ａ）に示すよう
に、液滴６に入射したレーザ光Ｌは複数回の屈折や反射
を経て液供給手段５から外れる。このレーザ光Ｌを受光
手段７により受光する。例えば、液滴６に対して入射角
５５°で入射したレーザ光Ｌは、液滴６に入射する際に
３７．９°で屈折する。次いで、ウエハ３の表面で反射
したレーザ光Ｌは、液滴６から空気中に出る際に１４．
０°で屈折し、液滴６からの出射角１０．５°出射す
る。More specifically, when a droplet 6 exists between the liquid supply means 5 and the wafer 3, as shown in FIG. From the liquid supply means 5 through the refraction and reflection of the liquid. The laser light L is received by the light receiving means 7. For example, the laser beam L incident on the droplet 6 at an incident angle of 55 ° is refracted at 37.9 ° when entering the droplet 6. Next, when the laser light L reflected from the surface of the wafer 3 exits from the liquid droplet 6 into the air, 14.
The light is refracted at 0 ° and emerges from the droplet 6 at an emission angle of 10.5 °.
【００２３】一方、液供給手段５とウエハ３との間に液
滴６が存在しない場合には、図４（ｂ）に示すように、
レーザ出射手段から出射されたレーザ光Ｌは、上記と異
なる軌跡をとり、直接ウエハ３の表面で反射して液供給
手段５に入射して液供給手段５から漏れない。このた
め、レーザ光Ｌは受光手段７で受光されない。On the other hand, when the droplet 6 does not exist between the liquid supply means 5 and the wafer 3, as shown in FIG.
The laser light L emitted from the laser emitting means takes a different trajectory from the above, directly reflects on the surface of the wafer 3, enters the liquid supply means 5, and does not leak from the liquid supply means 5. Therefore, the laser light L is not received by the light receiving means 7.
【００２４】このようにして、レーザ光Ｌが受光手段７
により受光されたかどうかにより、液供給手段５とウエ
ハ３との間に液滴６が存在するかどうかを判断し、作業
中にトラブルが発生したかどうかを確認する。したがっ
て、レーザ光を出射した時に受光手段７でレーザ光が受
光されない場合には、作業中にトラブルが発生したと判
断して、表示や警告を行う。In this manner, the laser beam L is applied to the light receiving means 7
It is determined whether or not the droplet 6 exists between the liquid supply means 5 and the wafer 3 depending on whether or not the light is received, and it is confirmed whether or not a trouble has occurred during the operation. Therefore, when the laser light is not received by the light receiving means 7 when the laser light is emitted, it is determined that a trouble has occurred during the operation, and a display or a warning is issued.
【００２５】なお、受光手段７を配置する位置は、液滴
６が存在する際にレーザ光Ｌを受光し、液滴６が存在し
ないときにはレーザ光Ｌを受光しないように最適化する
必要がある。これは、図３および以下の式（１）に基づ
いて上記屈折を考慮して設定する。なお、エッチング液
には、ＨＦ等が含まれるが屈折率については水と同じと
考えて良い。 ｓｉｎθ１（空気）／ｓｉｎθ２（水）＝ｎ２／ｎ１ …式（１） ここで、ｎ１：水の屈折率（１）、ｎ２：空気の屈折率
（１．３３３）The position where the light receiving means 7 is disposed needs to be optimized so that the laser light L is received when the droplet 6 is present and the laser light L is not received when the droplet 6 is not present. . This is set in consideration of the refraction based on FIG. 3 and the following equation (1). The etchant contains HF and the like, but the refractive index can be considered to be the same as that of water. sin θ1 (air) / sin θ2 (water) = n2 / n1 Equation (1) where n1: refractive index of water (1), n2: refractive index of air (1.333)
【００２６】次いで、図１（ｃ）に示すように、液供給
手段５は液滴６を保持した状態でウエハ３の上方に上昇
し、再びウエハ３の中心部の上方まで移動し、さらに下
降して液滴６をウエハ３の中心部に接触させる。そし
て、液供給手段５から液滴６を開放して液供給手段５を
上昇させて移動させる。これにより、ウエハ３の中心部
に不純物を採取した液滴６が残る。その後、ウエハ３の
中心部に残った液滴６を赤外線乾燥して濃縮し、この濃
縮物について分析を行う。このようにして、トラブルの
発生を確実に検知しながら、基板上の不純物の採取を行
うことができ、不純物分析を高い信頼性で行うことがで
きる。Next, as shown in FIG. 1C, the liquid supply means 5 rises above the wafer 3 while holding the droplets 6, moves again to above the center of the wafer 3, and further descends. Then, the droplet 6 is brought into contact with the center of the wafer 3. Then, the liquid droplets 6 are released from the liquid supply means 5, and the liquid supply means 5 is raised and moved. As a result, a droplet 6 obtained by collecting impurities remains at the center of the wafer 3. Thereafter, the droplet 6 remaining at the center of the wafer 3 is dried by infrared radiation and concentrated, and the concentrate is analyzed. In this manner, the impurities on the substrate can be sampled while reliably detecting the occurrence of the trouble, and the impurity analysis can be performed with high reliability.
【００２７】上記実施形態においては、レーザ光Ｌを液
滴６に入射する角度を５５°にした場合について説明し
ているが、本発明においてレーザ光Ｌの入射角は、液滴
６が存在する際にレーザ光Ｌを受光し、液滴６が存在し
ないときにはレーザ光Ｌを受光しなければ、特に制限さ
れない。In the above embodiment, the case where the angle of incidence of the laser beam L on the droplet 6 is set to 55 ° is described. In this case, the laser beam L is received, and if the droplet 6 does not exist, the laser beam L is not received.
【００２８】上記実施形態においては、基板に対して液
供給手段を駆動させる場合について説明しているが、本
発明においては、液供給手段を固定して基板支持部材を
駆動させる構成であっても良い。In the above embodiment, the case where the liquid supply means is driven with respect to the substrate is described. However, in the present invention, the liquid supply means is fixed and the substrate supporting member is driven. good.
【００２９】[0029]
【発明の効果】以上説明したように本発明の基板表面の
不純物を採取する装置およびその方法によれば、作業に
トラブルが発生して液滴が基板表面上を走査されない場
合を確実に検知することができる。したがって、不純物
分析の信頼性を向上させることができる。As described above, according to the apparatus and method for collecting impurities on the substrate surface according to the present invention, it is possible to reliably detect the case where a trouble occurs in the work and the droplet is not scanned on the substrate surface. be able to. Therefore, the reliability of the impurity analysis can be improved.
【図１】（ａ）〜（ｃ）は本発明の基板表面の不純物を
採取する方法を説明するための図である。FIGS. 1A to 1C are views for explaining a method of collecting impurities on a substrate surface according to the present invention.
【図２】本発明の基板表面の不純物を採取する装置およ
び方法を説明するための図である。FIG. 2 is a diagram for explaining an apparatus and a method for collecting impurities on a substrate surface according to the present invention.
【図３】本発明において使用する原理を説明するための
図である。FIG. 3 is a diagram for explaining the principle used in the present invention.
【図４】（ａ）および（ｂ）は本発明の基板表面の不純
物を採取する装置および方法を説明するための図であ
る。FIGS. 4A and 4B are diagrams for explaining an apparatus and a method for collecting impurities on a substrate surface according to the present invention.
【図５】（ａ）〜（ｃ）は従来の基板表面の不純物を採
取する方法を説明するための図であり、（ｄ）は基板表
面の不純物を採取する際に発生する問題を説明するため
の図である。FIGS. 5A to 5C are diagrams for explaining a conventional method for collecting impurities on a substrate surface, and FIG. 5D is a diagram for explaining a problem that occurs when impurities on a substrate surface are collected. FIG.
１…回転シャフト、２…基板支持部材、３…ウエハ、４
…駆動手段、５…液供給手段、５ａ…支持棒、５ｂ…ノ
ズル、６…液滴、７…受光手段、Ｌ…レーザ光。DESCRIPTION OF SYMBOLS 1 ... Rotating shaft, 2 ... Substrate support member, 3 ... Wafer, 4
... Drive means, 5 liquid supply means, 5a support rod, 5b nozzle, 6 droplets, 7 light receiving means, L laser light.
Claims (3)
置であって、 基板表面を水平にした状態で基板を支持する基板支持手
段と、 前記基板支持手段を回転させる回転手段と、 前記基板表面上の不純物を採取する液体を前記基板に供
給する液供給手段と、 前記液供給手段の先端と前記基板表面との間が前記液体
で連続した状態で前記基板と前記液供給手段とを相対的
に移動させる移動手段と、 前記連続した状態の液体にレーザ光を照射するレーザ光
照射手段と、 前記連続した状態の液体を通過したレーザ光を受光する
受光手段と、を具備することを特徴とする基板表面の不
純物を採取する装置。1. An apparatus for collecting impurities present on a surface of a substrate, comprising: substrate support means for supporting the substrate with the substrate surface being horizontal; rotating means for rotating the substrate support means; A liquid supply means for supplying a liquid for collecting impurities to the substrate; and a liquid supply means for moving the substrate and the liquid supply means in a state where the liquid is continuously provided between a tip of the liquid supply means and the substrate surface. Moving means for moving the liquid in the continuous state, laser light irradiating means for irradiating the liquid in the continuous state with laser light, and light receiving means for receiving the laser light having passed through the liquid in the continuous state, For collecting impurities on the substrate surface.
法であって、 基板表面を水平にした状態で基板を回転させる工程と、 基板表面上の不純物を採取する液体を前記基板表面に供
給して液供給手段の先端と前記基板表面との間が前記液
体で連続した状態にする工程と、 前記液体で連続した状態で前記基板と前記液供給手段と
を相対的に移動させる工程と、 前記連続した状態の液体にレーザ光を照射して前記連続
した状態の液体を通過したレーザ光を受光する工程と、
を具備することを特徴とする基板表面の不純物を採取す
る方法。2. A method for collecting impurities present on a surface of a substrate, comprising: rotating the substrate while keeping the surface of the substrate horizontal; and supplying a liquid for collecting impurities on the surface of the substrate to the surface of the substrate. Causing the liquid between the tip of the liquid supply means and the surface of the substrate to be continuous with the liquid; and relatively moving the substrate and the liquid supply means while the liquid is continuous with the liquid; A step of irradiating the liquid in the continuous state with laser light and receiving the laser light passing through the liquid in the continuous state,
A method for collecting impurities on the surface of a substrate, comprising:
置したときに、前記連続した状態の液体にレーザ光を照
射して前記連続した状態の液体を通過したレーザ光を受
光することを特徴とする請求項２に記載の基板表面の不
純物を採取する方法。3. The method according to claim 1, wherein the liquid supply unit is positioned at a peripheral portion of the substrate, and irradiates the liquid in the continuous state with laser light to receive the laser light passing through the liquid in the continuous state. 3. The method for collecting impurities on a substrate surface according to claim 2, wherein:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11156197A JPH10300684A (en) | 1997-04-28 | 1997-04-28 | Device and method for sampling impurity on substrate surface |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11156197A JPH10300684A (en) | 1997-04-28 | 1997-04-28 | Device and method for sampling impurity on substrate surface |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH10300684A true JPH10300684A (en) | 1998-11-13 |
Family
ID=14564512
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11156197A Pending JPH10300684A (en) | 1997-04-28 | 1997-04-28 | Device and method for sampling impurity on substrate surface |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH10300684A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20160121384A (en) * | 2016-02-26 | 2016-10-19 | 엔비스아나(주) | Apparatus For Analyzing Substrate Contamination And Method Thereof |
| WO2018163848A1 (en) * | 2017-03-07 | 2018-09-13 | 株式会社リガク | Sample collection device, sample collection method, and fluorescent x-ray analysis device employing same |
-
1997
- 1997-04-28 JP JP11156197A patent/JPH10300684A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20160121384A (en) * | 2016-02-26 | 2016-10-19 | 엔비스아나(주) | Apparatus For Analyzing Substrate Contamination And Method Thereof |
| WO2018163848A1 (en) * | 2017-03-07 | 2018-09-13 | 株式会社リガク | Sample collection device, sample collection method, and fluorescent x-ray analysis device employing same |
| CN108885186A (en) * | 2017-03-07 | 2018-11-23 | 株式会社理学 | Sample recyclable device, sample recovery method and the fluorescent x-ray analyzer using them |
| CN108885186B (en) * | 2017-03-07 | 2019-11-12 | 株式会社理学 | Sample recyclable device, sample recovery method and the fluorescent x-ray analyzer using them |
| US10989677B2 (en) | 2017-03-07 | 2021-04-27 | Rigaku Corporation | Sample collecting device, sample collecting method, and fluorescent x-ray analysis apparatus using the same |
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