KR20000013626A - Device for measuring particle on wafer - Google Patents

Device for measuring particle on wafer Download PDF

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Publication number
KR20000013626A
KR20000013626A KR1019980032594A KR19980032594A KR20000013626A KR 20000013626 A KR20000013626 A KR 20000013626A KR 1019980032594 A KR1019980032594 A KR 1019980032594A KR 19980032594 A KR19980032594 A KR 19980032594A KR 20000013626 A KR20000013626 A KR 20000013626A
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South Korea
Prior art keywords
wafer
laser beam
laser
detector
stage
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KR1019980032594A
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Korean (ko)
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김광수
김봉수
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윤종용
삼성전자 주식회사
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Priority to KR1019980032594A priority Critical patent/KR20000013626A/en
Publication of KR20000013626A publication Critical patent/KR20000013626A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)

Abstract

PURPOSE: A device for measuring particle on wafer is provided to enhance the reliability when measuring the particle. CONSTITUTION: A device for measuring particle on wafer comprises a laser(25), a beam split(26), a detector(28), a control unit(24) and a stage driver(24). The laser(25) irradiates laser beam on a surface of a wafer(20). The beam split(26) reflects the laser beam reflected from the surface of the wafer. The detector detects the laser beam reflected by the beam split. The control unit receives the detect signal of the detector and generates the correcting signal for correcting it. The stage driver receives the correcting signal of the control unit and drives the stage to control the focus of the stage.

Description

웨이퍼 파티클 측정장치Wafer Particle Measuring Equipment

본 발명은 웨이퍼 파티클 측정장치에 관한 것으로서, 보다 상세하게는 웨이퍼 상에 맺히는 레이저의 초점을 최상으로 자동 조절하도록 하는 웨이퍼 파티클 측정장치에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wafer particle measuring apparatus, and more particularly, to a wafer particle measuring apparatus for automatically adjusting the focus of a laser beam on a wafer.

반도체 공정을 모니터링하는 설비중 레이저를 이용하여 패턴상의 파티클 유무를 측정하는 설비가 있다.Among the facilities for monitoring semiconductor processes, there is a facility for measuring the presence or absence of particles on a pattern using a laser.

상기 설비는 6인치, 8인치 웨이퍼를 공용으로 사용하도록 만들어져 있지만 웨이퍼 파티클 측정시 웨이퍼를 올려 두는 척의 직경이 6인치, 8인치로 구분되어 있어 실질적으로 공통으로 사용되지 않고 있다.The equipment is made to use 6-inch, 8-inch wafers in common, but the diameter of the chuck that holds the wafer when measuring wafer particles is divided into 6-inch and 8-inch, which is not substantially used in common.

도1은 종래의 웨이퍼 파티클 측정장치를 개략적으로 나타낸 구성도이다.1 is a schematic view showing a conventional wafer particle measuring apparatus.

도1을 참조하면, 웨이퍼(10)가 안착된 척(11)과 상기 척(11)을 상하구동하는 스테이지(12)와 상기 웨이퍼(10)에 레이저 빔을 조사하는 레이저(14)로 이루어진다.Referring to FIG. 1, the wafer 10 includes a chuck 11 on which the wafer 10 is mounted, a stage 12 for vertically driving the chuck 11, and a laser 14 for irradiating a laser beam to the wafer 10.

그리고 웨이퍼(10)에 반사되는 빔을 수신하여 파티클 유무를 판별할 수 있는 판별장치(미도시)로 이루어진다.And it comprises a determination device (not shown) that can receive the beam reflected on the wafer 10 to determine the presence or absence of particles.

이는 레이저(14)의 레이저 빔을 웨이퍼(10) 상에 주사하고, 이로부터 반사되는 레이저빔을 수신, 분석함으로써 웨이퍼 상의 파티클 존재여부를 알 수 있는 것이다.The laser beam of the laser 14 is scanned on the wafer 10, and the laser beam reflected from the laser beam is received and analyzed to determine whether particles are present on the wafer.

그러나, 웨이퍼의 크기나 종류에 따라 두께가 달라져서 초점이 달라지기 때문에 측정 데이터의 신뢰도가 낮은 문제점이 있었다.However, there is a problem in that the reliability of the measurement data is low because the thickness varies depending on the size or type of wafer.

본 발명의 목적은, 레이저와 웨이퍼와의 거리를 조절 즉, 스테이지의 높이 조절에 의해 레이저의 초점을 최상으로 유지시켜 측정장치의 신뢰도를 높일 수 있도록 하는 웨이퍼 파티클 측정장치를 제공하는 데 있다.SUMMARY OF THE INVENTION An object of the present invention is to provide a wafer particle measuring apparatus that adjusts the distance between a laser and a wafer, that is, maintains the laser focus at the best by adjusting the height of the stage to increase the reliability of the measuring apparatus.

도1은 종래의 웨이퍼 파티클 측정장치를 개략적으로 나타낸 구성도이다.1 is a schematic view showing a conventional wafer particle measuring apparatus.

도2는 본 발명의 일 실시예에 따른 웨이퍼 파티클 측정장치를 나타내는 구성도이다.2 is a block diagram showing a wafer particle measuring apparatus according to an embodiment of the present invention.

※ 도면의 주요 부분에 대한 부호의 설명※ Explanation of codes for main parts of drawing

10,20 : 웨이퍼 11,21 : 척10,20: wafer 11,21: chuck

12,22 : 스테이지 14,25 : 레이저12,22 Stage 14,25 Laser

24 : 모터 구동부 26 : 빔 스플릿24: motor drive unit 26: beam split

28 : 검출기 30 : 제어부28: detector 30: control unit

32 : 초퍼휠 34 : 초퍼모터32: chopper wheel 34: chopper motor

상기 목적을 달성하기 위한 본 발명에 따른 웨이퍼 파티클 측정장치는 상하구동되는 스테이지 상의 웨이퍼 표면에 파티클을 측정하는 웨이퍼 파티클 측정장치에 있어서, 웨이퍼 표면에 레이저 빔을 조사하는 레이저, 상기 웨이퍼 표면에서 반사된 레이저빔을 반사하는 빔 스플릿, 상기 빔 스플릿에 의해 반사된 레이저빔을 검출하는 검출기, 상기 검출기의 신호를 인가받아 초점 위치를 판별하고 이를 보정하기 위한 보정신호를 생성하는 제어부 및 상기 제어부의 보정신호를 입력받아 스테이지를 구동시켜 초점을 조절하는 모터 구동부를 포함하여 이루어진다.A wafer particle measuring apparatus according to the present invention for achieving the above object is a wafer particle measuring apparatus for measuring a particle on the wafer surface on the vertically driven stage, the laser irradiating a laser beam on the wafer surface, reflected from the wafer surface A control unit for detecting a beam split reflecting the laser beam, a detector for detecting the laser beam reflected by the beam split, a control unit for receiving a signal of the detector to determine a focus position and generating a correction signal for correcting the correction signal, and a correction signal of the control unit It receives the input is made of a motor drive for adjusting the focus by driving the stage.

상기 빔 스플릿과 상기 검출기 사이에 레이저 빔을 샘플링하는 초퍼휠(Chopper wheel)을 더 설치한다.A chopper wheel for sampling a laser beam is further installed between the beam split and the detector.

이하, 본 발명의 구체적인 실시예를 첨부한 도면을 참조하여 상세히 설명한다.Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

도2에서 보는 바와 같이 웨이퍼 파티클 측정장치는 웨이퍼(20) 표면에 레이저 빔을 조사하는 레이저(25), 상기 웨이퍼(20)에서 반사된 레이저빔을 반사하는 빔 스플릿(26), 상기 빔 스플릿(26)에 의해 반사된 레이저빔을 검출하는 검출기(28), 상기 검출기(28)의 검출신호를 인가받아 초점위치를 판별하고 이를 보정하기 위한 보정신호를 생성하는 제어부(30) 및 상기 제어부(30)의 보정신호를 입력받아 스테이지(22)를 구동시켜 초점을 조절하는 모터 구동부(24)를 포함하여 이루어진다.As shown in FIG. 2, the wafer particle measuring apparatus includes a laser 25 for irradiating a laser beam to a surface of the wafer 20, a beam split 26 for reflecting a laser beam reflected from the wafer 20, and the beam split ( A detector 28 that detects the laser beam reflected by 26, a controller 30 that receives a detection signal of the detector 28, and generates a correction signal for determining a focus position and correcting the same, and the controller 30. It includes a motor driving unit 24 for adjusting the focus by driving the stage 22 receives the correction signal of the).

상기 빔 스플릿(26)과 상기 검출기(28) 사이에 레이저 빔을 샘플링하는 초퍼휠(32)이 더 설치되어 있다.A chopper wheel 32 for sampling a laser beam is further provided between the beam split 26 and the detector 28.

레이저(25)의 레이저 빔을 웨이퍼(20)의 표면에 조사하면, 이로부터 반사된 레이저빔이 빔 스플릿(26)에 반사되어 초퍼휠(32)을 통과한다. 상기 초퍼휠을 통과한 레이저빔을 검출기(28)에서 감지하여 이 신호를 제어부(30)가 받아 초점 판별여부에 따라 보정신호를 인가하여 모터 구동부(24)가 업/다운하면서 스테이지(22)를 구동하여 초점을 맞춘다.When the laser beam of the laser 25 is irradiated on the surface of the wafer 20, the laser beam reflected therefrom is reflected by the beam split 26 and passes through the chopper wheel 32. The detector 28 detects the laser beam passing through the chopper wheel, receives the signal from the control unit 30, and applies a correction signal according to whether to determine the focus. The motor driver 24 moves the stage 22 up and down. Drive to focus.

상기 초퍼휠(32)은 초퍼모터(34)에 의해 레이저 빔을 샘플링하여 상기 검출기(28)에 보낸다.The chopper wheel 32 samples the laser beam by the chopper motor 34 and sends it to the detector 28.

이렇게 하여 최상의 초점을 유지하여 웨이퍼 파티클 측정시 측정 데이터의 신뢰성을 높일 수 있고, 파티클 검출오류로 인해 제품불량을 방지하는 이점이 있다.In this way, it is possible to maintain the best focus to increase the reliability of the measurement data when measuring wafer particles, and to prevent product defects due to particle detection errors.

따라서, 본 발명에 의하면 웨이퍼 두께나 크기에 상관없이 최상의 초점을 유지하여 웨이퍼상의 파티클 측정시 신뢰성을 높일 수 있어 파티클 검출오류로 발생할 수 있는 불량을 방지함으로 수율을 향상시키는 효과가 있다.Therefore, according to the present invention, it is possible to maintain the best focus irrespective of the thickness or size of the wafer, thereby increasing reliability when measuring particles on the wafer, thereby improving yield by preventing defects caused by particle detection errors.

이상에서 본 발명은 기재된 구체예에 대해서만 상세히 설명되었지만 본 발명의 기술사상 범위 내에서 다양한 변형 및 수정이 가능함은 당업자에게 있어서 명백한 것이며, 이러한 변형 및 수정이 첨부된 특허청구범위에 속함은 당연한 것이다.Although the present invention has been described in detail only with respect to the described embodiments, it will be apparent to those skilled in the art that various modifications and variations are possible within the technical scope of the present invention, and such modifications and modifications are within the scope of the appended claims.

Claims (2)

상하구동되는 스테이지 상의 웨이퍼 표면에 파티클을 측정하는 웨이퍼 파티클 측정장치에 있어서,A wafer particle measuring apparatus for measuring particles on a wafer surface on a stage driven up and down, 웨이퍼 표면에 레이저 빔을 조사하는 레이저;A laser for irradiating a laser beam onto the wafer surface; 상기 웨이퍼 표면에서 반사된 레이저 빔을 반사하는 빔 스플릿;A beam split reflecting a laser beam reflected from the wafer surface; 상기 빔 스플릿에 의해 반사된 레이저 빔을 검출하는 검출기;A detector for detecting a laser beam reflected by the beam split; 상기 검출기의 검출신호를 인가받아 초점 위치를 판별하고 이를 보정하기 위한 보정신호를 생성하는 제어부; 및A control unit configured to receive a detection signal of the detector to determine a focus position and to generate a correction signal for correcting the focus position; And 상기 제어부의 보정신호를 입력받아 스테이지를 구동시켜 초점을 조절하는 스테이지 구동부;A stage driver which receives a correction signal of the controller and drives a stage to adjust a focus; 를 포함하여 이루어지는 것을 특징으로 하는 웨이퍼 파티클 측정장치.Wafer particle measuring apparatus comprising a. 제 1 항에 있어서,The method of claim 1, 상기 빔 스플릿과 상기 검출기 사이에 레이저 빔을 샘플링하는 초퍼휠을 더 설치하는 것을 특징으로 하는 상기 웨이퍼 파티클 측정장치.And a chopper wheel for sampling a laser beam between the beam split and the detector.
KR1019980032594A 1998-08-11 1998-08-11 Device for measuring particle on wafer KR20000013626A (en)

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100688022B1 (en) * 2001-03-16 2007-02-27 동부일렉트로닉스 주식회사 apparatus for reviewing wafer
KR100820118B1 (en) * 2006-05-18 2008-04-08 나노메트릭스코리아 주식회사 Auto focusing system of vision system
KR100837693B1 (en) * 2007-03-23 2008-06-13 주식회사 나래나노텍 Integral pattern electrode bonding device having alignment and bonding functions
KR20170043821A (en) * 2015-10-14 2017-04-24 삼성전자주식회사 Apparatus for auto focus control, and method for manufacturing semiconductor device
KR20180029385A (en) * 2016-09-12 2018-03-21 삼성전자주식회사 Wafer perforating device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100688022B1 (en) * 2001-03-16 2007-02-27 동부일렉트로닉스 주식회사 apparatus for reviewing wafer
KR100820118B1 (en) * 2006-05-18 2008-04-08 나노메트릭스코리아 주식회사 Auto focusing system of vision system
KR100837693B1 (en) * 2007-03-23 2008-06-13 주식회사 나래나노텍 Integral pattern electrode bonding device having alignment and bonding functions
KR20170043821A (en) * 2015-10-14 2017-04-24 삼성전자주식회사 Apparatus for auto focus control, and method for manufacturing semiconductor device
KR20180029385A (en) * 2016-09-12 2018-03-21 삼성전자주식회사 Wafer perforating device

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