JPH10294287A - Transfer method for semiconductor wafer of semiconductor manufacture device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To reduce the damage of a semiconductor wafer at the time of thermal treatment and to improve the quality of the semiconductor wafer. SOLUTION: The device is provided with a reaction container where the film forming treatment of the semiconductor wafer 1 is executed, a lamp heating the semiconductor wafer 1 at the time of film forming treatment, a susceptor 4 which is installed in the reaction container and supports the semiconductor wafer 1 at the time of film forming treatment, a transportation blade 5 guiding the carry-in/out of the semiconductor wafer 1 into/from the reaction container, lift pins 6 which repeat/support the semiconductor wafer 1 at the time of transferring the semiconductor wafer 1 to the susceptor 4 from the transportation blade 5 and a control part controlling the transfer procedure of the semiconductor wafer 1 from the lift pins 6 to the susceptor 4. At the time of transferring the susceptor 4 from the transportation blade 5 on the susceptor 4 through the lift pins 6, the warp of the semiconductor wafer 1 which is carried into the reaction container, is heated and warped is restored on the lift pins 6 and the wafer is transferred to the susceptor 4.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing technique, and more particularly to a semiconductor manufacturing apparatus for performing a heat treatment on a semiconductor wafer and a method for transferring a semiconductor wafer.

[0002]

2. Description of the Related Art The technology described below studies the present invention,
Upon completion, they were examined by the inventor, and the outline is as follows.

As an example of a semiconductor manufacturing apparatus for heat-treating a semiconductor wafer, an epitaxial growth apparatus for growing a single-crystal thin film (epitaxial thin film) on a semiconductor wafer (mirror wafer) is known.

Here, a method of forming a thin film using a single wafer type epitaxial growth apparatus will be described.

First, a semiconductor wafer at room temperature is heated to a high temperature (5.
(More than 00 ° C) into the reaction chamber (reaction vessel)
The semiconductor wafer is once relayed and supported by the point support type lift pins (wafer transfer members).

After that, the semiconductor wafer is transferred from the lift pins to the susceptor, and heat treatment, that is, formation of an epitaxial thin film (hereinafter, abbreviated as epi film) is performed.

[0007] For various epitaxial growth apparatuses for growing an epitaxial film on a semiconductor wafer, see, for example, “Industrial Research Institute Co., Ltd., issued November 25, 1994,“ Electronic Materials November Special Edition, Ultra LSI Manufacturing. Test apparatus guidebook <1995 version> ”, pp. 55-56.

[0008]

However, in the above-mentioned technology, when a semiconductor wafer is carried into a reaction vessel in which a high-temperature atmosphere of 500 ° C. or higher is formed, a saddle-shaped warp is formed in the semiconductor wafer due to the high temperature. .

Further, when the warped semiconductor wafer is transferred to the susceptor, when the warp is recovered on the susceptor, the back edge of the semiconductor wafer and the susceptor rub against each other to generate dust. Occurs, and as a result, there is a problem that the foreign matter adheres to the semiconductor wafer.

In addition, the back edge of the semiconductor wafer is damaged.

As a result, there is a problem that the quality of the semiconductor wafer is deteriorated.

When a coating of Si is formed on the susceptor, the coating generates dust due to friction with the back edge of the semiconductor wafer.

An object of the present invention is to provide a semiconductor manufacturing apparatus and a semiconductor wafer transfer method for improving the quality of a semiconductor wafer by reducing damage to the semiconductor wafer during heat treatment.

The above and other objects and novel features of the present invention will become apparent from the description of the present specification and the accompanying drawings.

[0015]

SUMMARY OF THE INVENTION Among the inventions disclosed in the present application, the outline of a representative one will be briefly described.
It is as follows.

That is, a semiconductor manufacturing apparatus according to the present invention comprises a reaction vessel in which a heat treatment of a semiconductor wafer is performed, heating means for heating the semiconductor wafer during the heat treatment, The wafer support to be supported, and when the semiconductor wafer is transferred to the wafer support in the reaction vessel, the warpage of the semiconductor wafer that has been heated and warped by being loaded into the reaction vessel has been recovered. And a control unit for controlling to perform the transfer.

Further, the semiconductor manufacturing apparatus of the present invention comprises a reaction vessel in which heat treatment of a semiconductor wafer is performed, heating means for heating the semiconductor wafer during heat treatment, and a heating means installed in the reaction vessel and which heats the semiconductor wafer during heat treatment. A wafer support for supporting, a wafer transfer member for guiding the loading and unloading of the semiconductor wafer into and from the reaction vessel, and when transferring the semiconductor wafer from the wafer transfer member to the wafer support, the semiconductor wafer is When the semiconductor wafer is transferred from the wafer transfer member to the wafer support via the wafer transfer member via the wafer transfer member, the warped semiconductor wafer that has been heated and warped has recovered. And a control unit for controlling to perform the transfer.

As a result, when the semiconductor wafer is transferred to the wafer support, there is no warpage. Therefore, it is possible to prevent the semiconductor wafer from performing the warp recovery operation on the susceptor.

As a result, the contact between the back surface edge portion of the semiconductor wafer and the susceptor is reduced, and it is possible to prevent the generation and winding of foreign matters and also to prevent the back surface edge portion of the semiconductor wafer from being damaged. Thereby, the quality of the semiconductor wafer can be improved.

The method for transferring a semiconductor wafer according to the present invention is used in a semiconductor manufacturing apparatus for performing a heat treatment on a semiconductor wafer, and includes the steps of: loading the semiconductor wafer into a reaction vessel of the semiconductor manufacturing apparatus; When transferring the semiconductor wafer to a wafer support table installed in the reaction vessel and performing a heat treatment, after the warpage of the semiconductor wafer that has been heated and warped by being loaded into the reaction vessel has been recovered,
Transferring the semiconductor wafer to the wafer support table.

Further, according to the method of transferring a semiconductor wafer of the present invention, the semiconductor wafer is guided by a wafer transfer member and the semiconductor wafer is loaded into a reaction vessel of the semiconductor manufacturing apparatus. A step of receiving the semiconductor wafer from the wafer transfer member and relaying and supporting the semiconductor wafer by the wafer transfer member; and transferring the semiconductor wafer to a wafer support table installed in the reaction vessel and performing a heat treatment. After the warpage of the semiconductor wafer heated and warped by being loaded into the reaction vessel is recovered on the wafer transfer member, the semiconductor wafer is transferred from the wafer transfer member to the wafer support table. Mounting step.

[0022]

Embodiments of the present invention will be described below in detail with reference to the drawings.

FIG. 1 is a conceptual diagram showing a partial cross section of an embodiment of the structure of a semiconductor manufacturing apparatus (epitaxial growth apparatus) according to the present invention, and FIG. 2 is an embodiment of a method of transferring a semiconductor wafer according to the present invention. FIG. 3 is a transfer procedure diagram showing a partial cross section of an example of the embodiment, FIG. 3 is a monitor result diagram showing a monitor state of a semiconductor wafer in the epitaxial growth apparatus shown in FIG. 1, (a) is a monitor diagram at the time of non-warpage, b) is a monitor diagram at the time of warping, (c) is a diagram of the principle of distortion, FIG. 4 is a transfer procedure diagram showing a partial cross section of Comparative Example 1 to the semiconductor wafer transfer method of the present invention, and FIG. And FIG. 6 is a test result diagram showing a warped state of a semiconductor wafer when a semiconductor wafer is transferred according to Comparative Example 1 shown in FIG. FIG.

In the present embodiment, as an example of a semiconductor manufacturing apparatus for heat-treating semiconductor wafer 1, an epitaxial film (single-crystal thin film) is grown on semiconductor wafer 1, which is a mirror wafer, in a gas-phase atmosphere. A single-wafer-type epitaxial growth apparatus will be described below.

That is, the heat treatment in the present embodiment is a film forming process for growing the epi film on the semiconductor wafer 1.

The configuration of the epitaxial growth apparatus shown in FIG. 1 will be described with reference to FIGS. 1 to 3. The reaction vessel 2 in which the film forming process of the semiconductor wafer 1 is performed, and the heating device for heating the semiconductor wafer 1 during the film forming process. A lamp 3 as a means;
A susceptor 4 installed in the reaction vessel 2 and supporting the semiconductor wafer 1 during the film forming process, and a transfer blade 5 serving as a wafer transfer member for guiding the semiconductor wafer 1 into and out of the reaction vessel 2. When the semiconductor wafer 1 is transferred from the transfer blade 5 to the susceptor 4, a three-point support type lift pin 6, which is a wafer transfer member that relays and supports the semiconductor wafer 1, and the semiconductor wafer 1 via the lift pin 6. When the semiconductor wafer 1 is transferred from the transfer blade 5 to the susceptor 4 and the warp of the semiconductor wafer 1 that has been heated and warped is recovered, the control unit 7 controls to perform the transfer.

Further, in the epitaxial growth apparatus of the present embodiment, an image 8 (see FIG. 3) of the semiconductor wafer 1 relayed and supported by the lift pins 6 is taken in, and a CCD (Charge) serving as monitor means connected to the control unit 7. Coupl
ed Device) camera 9, whereby the epitaxial growth apparatus controls the semiconductor wafer 1 at the time of warping in the control unit 7 based on a signal from the image 8 of the semiconductor wafer 1 at the time of warping taken by the CCD camera 9. The shape of the specific part (signal from the image 8) and the signal of the shape of the specific part at the time of non-warping are compared, and after the shapes (signals) of the two become the same within the allowable range (matched), The transfer of the semiconductor wafer 1 from the lift pins 6 to the susceptor 4 is performed.

Although the CCD camera 9 is installed above the reaction vessel 2, the CCD camera 9 is installed at a position where light from the lamp 3 is difficult to enter using a reflector 10 provided around the lamp 3. Is preferred.

The lamps 3 use, for example, infrared rays. In order to improve the uniformity of the temperature of the semiconductor wafer 1, a plurality of lamps 3 are provided substantially corresponding to the circumferential shape of the semiconductor wafer 1, and The wafer 1 is installed on both sides of the front and back surfaces.

As a result, the temperature in the reaction vessel 2 can be rapidly raised and lowered, and the occurrence of thermal stress dislocation in the semiconductor wafer 1 can be suppressed. Further, the periphery of the lamp 3 is surrounded by the reflector 10, so that the heat of the lamp 3 can efficiently reach the reaction vessel 2 and the semiconductor wafer 1.

In this embodiment, the specific portion is near the center of the semiconductor wafer 1, and the lamp 3 and the reflecting plate 10 are reflected and projected by the CCD camera 9 near the center of the semiconductor wafer 1. Is monitored, and the control unit 7 compares the two shapes.

Here, the image 8 of the semiconductor wafer 1 shown in FIG. 3 is used when the semiconductor wafer 1 is moved from the transfer blade 5 to the susceptor 4 when performing the film forming process on the semiconductor wafer 1 in the reaction vessel 2. 3A is a photograph of the semiconductor wafer 1 relayed and supported by the lift pins 6 taken by the CCD camera 9. FIG. 3A is a reflection image of the plurality of lamps 3 reflected on the surface of the semiconductor wafer 1 when the semiconductor wafer 1 is not warped. And a reflector reflection image 8b which is a reflection image of the reflector 10 reflected in the center of the lamp reflection image 8a.

The lamp reflection image 8a is an image which emits light and is arranged such that the lamps 3 arranged in a circle are reflected on the semiconductor wafer 1 and thus appear brightly shining in a ring shape on the semiconductor wafer 1. In addition, in FIG. 3A, since the semiconductor wafer 1 is not warped, the lamp reflection image 8a and the reflection plate reflection image 8b form circular shapes.

FIG. 3B shows a lamp reflection image 8a and a reflection plate reflection image 8b when the semiconductor wafer 1 is warped. This is because the semiconductor wafer 1 appears to be deformed by warping into a saddle shape, as shown in FIG. 3C. Looks oval.

Here, the strain direction of the semiconductor wafer 1 in the present embodiment is a direction at 45 ° to the orientation flat of the semiconductor wafer 1 due to its crystal orientation.

In the present embodiment, the diameter of the circular (non-warped) reflector reflection image 8b shown in FIG. 3A is L, and the elliptical (warped) reflection shown in FIG. Plate reflection image 8
Let A be the length of the long axis of B, and B be the length of the short axis.
Thus, the definition of the amount of warpage is A / L and B / L.

Further, in the epitaxial growth apparatus of the present embodiment, the shape of the specific portion of the semiconductor wafer 1 at the time of non-warpage, that is, the vicinity of the central portion of the semiconductor wafer 1 at the time of non-warpage is reflected and projected as shown in FIG. Lamp 3 shown in (a)
The shape of the reflector 10 is registered in the controller 7 in advance. In this case, the actual value of L, which is the diameter of the circular (non-warped) reflector reflection image 8b, is registered. Keep it.

The epitaxial growth apparatus has a structure in which an image 8 of the semiconductor wafer 1 placed in the reaction vessel 2 is captured by a CCD camera 9 installed above and outside the reaction vessel 2. The upper dome 2a and the lower dome 2b each include an upper dome 2a and a lower dome 2b formed of a transparent material such as quartz.
Have a structure that can be divided.

That is, when carrying the semiconductor wafer 1 into and out of the reaction vessel 2, the upper dome 2a and the lower dome 2b are divided, and the semiconductor wafer 1 is carried in and out.

As shown in FIG. 1, during the heat treatment, that is, during the film forming process, the reaction gas is supplied from one side of the side surface of the semiconductor wafer 1 and exhausted to the other side, but the susceptor 4 is rotatable. It is mounted and rotated during the film forming process, thereby realizing uniformity of the film thickness.

The susceptor 4 is made of carbon or the like, and has a surface including the wafer mounting surface 4a.
C is coated.

Further, the transfer blade 5 is made of, for example, quartz.

Next, a method for transferring a semiconductor wafer according to the present embodiment will be described with reference to FIGS.

The method of transferring the semiconductor wafer 1 is as follows.
In the present embodiment, the semiconductor manufacturing apparatus is an epitaxial growth apparatus shown in FIG. 1, and an epitaxial film (single-layer) is formed on the semiconductor wafer 1 using the epitaxial growth apparatus. A method of transferring the semiconductor wafer 1 when growing a crystal thin film) will be described.

That is, the heat treatment described in the present embodiment is a film forming process for forming an epi film on the semiconductor wafer 1 which is a mirror wafer.

First, in the present embodiment, a signal of the shape of the lamp 3 and the reflecting plate 10 reflected and projected near the center of the semiconductor wafer 1 at the time of non-warping (when not warping) is previously obtained. Are registered in the control unit 7.

Here, the reflection image 8b of the reflecting plate 8b in a circular (non-warped) state of the semiconductor wafer 1 shown in FIG.
The actual value of L which is the diameter of is registered in the control unit 7.

Thereafter, the inside of the reaction vessel 2 of the epitaxial growth apparatus is heated to a predetermined temperature (for example, 700 ° C.) by a lamp 3.
), And further, the upper dome 2a of the reaction vessel 2.
And the lower dome 2b are divided so that the reaction vessel 2 is opened.

Subsequently, the semiconductor wafer 1 is held by the transfer blade 5 serving as a wafer transfer member, and the semiconductor wafer 1 is loaded into the reaction vessel 2.

Further, as shown in FIG. 2A, the semiconductor wafer 1 is guided by the transfer blade 5 to transfer the semiconductor wafer 1 onto the wafer mounting surface 4a of the susceptor 4.
The semiconductor wafer 1 is arranged on the wafer mounting surface 4a.

Thereafter, as shown in FIG. 2B, the lift pins 6 which are wafer transfer members are raised, and
Receives the semiconductor wafer 1 from the transfer blade 5 and moves the transfer blade 5 in the approach direction. Thus, the semiconductor wafer 1 is relayed and supported by the lift pins 6.

The shape (image 8) of the semiconductor wafer 1 relayed and supported on the lift pins 6 is monitored by the CC as a monitor.
It is always monitored by the D camera 9.

Here, the semiconductor wafer 1 is rapidly heated by being inserted into the reaction vessel 2, whereby
As shown in FIG. 2C, warpage occurs on the lift pins 6.

At this time, the semiconductor wafer 1 is warped in a saddle shape due to the influence of its crystal orientation, as shown in FIG.

Subsequently, the image 8 of the warped semiconductor wafer 1 is converted into a signal by the CCD camera 9 and taken into the control unit 7, and the control unit 7 controls the shape of the specific portion of the warped semiconductor wafer 1. The signal (signal) is compared with the shape (signal) of the specific part at the time of non-warpage registered in the control unit 7 in advance.

Here, the specific portion in the present embodiment is substantially near the center of the semiconductor wafer 1,
A lamp reflection image 8a which is a reflection image of the plurality of lamps 3 reflected on the surface of the semiconductor wafer 1 by the camera 9, and a reflection plate reflection image 8b which is a reflection image of the reflection plate 10 reflected at the center of the lamp reflection image 8a. And shoot.

In the state where the semiconductor wafer 1 is warped,
When the semiconductor wafer 1 is viewed from above, as shown in FIG. 3B, its shape looks elliptical, so the control unit 7 sets the length of the major axis of the elliptical reflector reflection image 8b to A, In addition, the length of the short axis is recognized as B, and A
And monitor the value of B.

Further, the control unit 7 continues to calculate the defined warpage amounts A / L and B / L based on the previously registered value of L and A and B.

The semiconductor wafer 1 is kept on the lift pins 6 until the warpage of the semiconductor wafer 1 is recovered.

Thereafter, the semiconductor wafer 1 is placed on the lift pins 6.
When the warp recovers and returns to the original shape (the shape at the time of non-warpage), the control unit 7 performs the following operations as shown in FIGS.
It is determined that A = B, that is, A / L = B / L.
Both shapes (the shape of the non-warped semiconductor wafer 1 and the shape of the warped semiconductor wafer 1) became the same (matched).
That is, it is recognized that the semiconductor wafer 1 has recovered to the original shape (the shape at the time of non-warpage).

Here, the semiconductor wafer 1 is inserted into a high-temperature atmosphere and rapidly heated to a high temperature.
Warpage was formed. This is because the temperature distribution in the plane of the semiconductor wafer 1 fluctuates temporarily.

Therefore, if the temperature distribution in the plane becomes uniform over time, the formed warpage is recovered.

Thereafter, the semiconductor wafer 1 is placed on the lift pins 6.
When the control unit 7 recognizes that A / L = B / L and no warpage has occurred, the susceptor 4 is raised as shown in FIG.
The semiconductor wafer 1 is transferred to the susceptor 4 from FIG.
(E)).

That is, the wafer mounting surface 4a of the susceptor 4
The semiconductor wafer 1 is placed on the substrate.

Thereafter, an epi-film is formed on the semiconductor wafer 1 by growing it to a predetermined thickness by reacting with a predetermined reaction gas supplied into the reaction vessel 2.

Here, the semiconductor wafer 1 shown in FIGS.
A comparative example of the transfer method will be described.

Comparative Example 1 shown in FIG. 4 shows a warped state of the semiconductor wafer 1 when the time for waiting the semiconductor wafer 1 on the lift pins 6 is 1 second.
FIG. 5 shows the elapsed time and the amount of warpage (A / L, B / L) since the semiconductor wafer 1 was transferred onto the lift pins 6 in this case.
Is a graph of the relationship with.

First, as shown in FIG. 4A, the semiconductor wafer 1 is guided by the transfer blade 5, and the semiconductor wafer 1 is arranged on the wafer mounting surface 4a of the susceptor 4.

Thereafter, the lift pins 6 are raised, and the lift pins 6 receive the semiconductor wafer 1 from the transfer blade 5 and move the transfer blade 5 in the approach direction. Thus, as shown in FIG. 4B, the semiconductor wafer 1 is relayed and supported by the lift pins 6.

Subsequently, the semiconductor wafer 1 is placed on the lift pins 6.
After waiting for one second, the susceptor 4 is raised as shown in FIG. 4C, whereby the semiconductor wafer 1 is transferred from the lift pins 6 to the wafer mounting surface 4a of the susceptor 4.

Thereafter, as shown in FIG. 4D, the semiconductor wafer 1 is warped on the wafer mounting surface 4a of the susceptor 4.

Subsequently, as shown in FIG. 4E, the warpage of the semiconductor wafer 1 on the susceptor 4 is recovered.

The state of occurrence and recovery of warpage of the semiconductor wafer 1 in Comparative Example 1 will be described with reference to FIGS. 4 and 5. The warpage of the semiconductor wafer 1 is determined after the semiconductor wafer 1 is relayed and supported by the lift pins 6. Starts after about 2 seconds,
After being transferred to the susceptor 4 in less than 3 seconds,
It recovers when about 11 seconds have passed.

That is, in this case, since the semiconductor wafer 1 has been warped after the transfer to the susceptor 4 (actually, the warp starts just before the transfer), the transfer of the semiconductor wafer 1 in the comparative example 1 is performed. The method is not preferred.

The transfer method of Comparative Example 2 shown in FIG.
The time for waiting the semiconductor wafer 1 on the lift pins 6 is 1
Not less than second and not more than 25 seconds (for example, 25 seconds in the present embodiment)
2 shows a warped state of the semiconductor wafer 1 in the case of the above.

First, as shown in FIG. 6A, the semiconductor wafer 1 is guided by the transfer blade 5, and the semiconductor wafer 1 is arranged on the wafer mounting surface 4a of the susceptor 4.

Thereafter, the lift pins 6 are raised, the lift pins 6 receive the semiconductor wafer 1 from the transfer blade 5, and move the transfer blade 5 in the approaching direction. Thus, as shown in FIG. 6B, the semiconductor wafer 1 is relayed and supported by the lift pins 6.

Subsequently, the semiconductor wafer 1 is placed on the lift pins 6.
For 25 seconds.

At this time, the warpage of the semiconductor wafer 1 starts approximately four seconds after the semiconductor wafer 1 is relayed and supported by the lift pins 6 (see FIG. 7).

That is, as shown in FIG. 6C, the semiconductor wafer 1 starts to warp on the lift pins 6.

Further, after a lapse of 25 seconds, the susceptor 4 is raised, whereby the semiconductor wafer 1 is transferred from the lift pins 6 to the wafer mounting surface 4a of the susceptor 4.

At this point, as shown in FIG.
The warpage of the semiconductor wafer 1 on the wafer mounting surface 4a of the susceptor 4 has not been completely recovered yet.

Thereafter, after about 3 seconds (28 seconds after the transfer to the lift pins 6 as shown in FIG. 7), the semiconductor wafer 1 is placed on the susceptor 4 as shown in FIG. Warpage recovers.

Thus, also in Comparative Example 2 shown in FIG. 6, the semiconductor wafer 1 performs the warp recovery operation after the semiconductor wafer 1 is transferred to the susceptor 4, so that this transfer method is not preferable.

According to the semiconductor manufacturing apparatus (epitaxial growth apparatus) and the method for transferring a semiconductor wafer of the present embodiment, the following operational effects can be obtained.

That is, when the semiconductor wafer 1 is transferred from the transfer blade 5 to the susceptor 4, after the warp of the semiconductor wafer 1 that has been heated and warped recovers on the lift pins 6,
When the semiconductor wafer 1 is transferred to the susceptor 4, the warp is eliminated when the semiconductor wafer 1 is transferred to the susceptor 4.

That is, the semiconductor wafer 1 on the lift pins 6
During the relay support, the in-plane temperature of the semiconductor wafer 1 becomes uniform, whereby the once warped semiconductor wafer 1 recovers on the lift pins 6.

Thereafter, by transferring the semiconductor wafer 1 to the susceptor 4, the semiconductor wafer 1 can be prevented from performing a warp recovery operation on the susceptor 4.

As a result, the contact between the local portion of the semiconductor wafer 1, that is, the back surface edge portion 1a (see FIG. 2) and the wafer mounting surface 4a of the susceptor 4 is reduced, and the generation and foreign material of the semiconductor wafer 1 can be prevented. Can be prevented from being damaged.

As a result, the quality of the semiconductor wafer 1 can be improved.

Note that, based on the image 8 of the warped semiconductor wafer 1 captured by the CCD camera 9, the control unit 7 determines the shape of the vicinity of the center (specific part) of the warped semiconductor wafer 1 (this embodiment). Then, a signal based on the shape of the lamp 3 and the reflector 10 reflected and projected near the center of the semiconductor wafer 1) is compared with a signal based on the shape near the center when the substrate is not warped. After the shapes become identical (coincidence), the semiconductor wafer 1 is transferred from the lift pins 6 to the susceptor 4, so that the control unit 7 reliably detects that the warpage of the semiconductor wafer 1 has been completely recovered. The semiconductor wafer 1 can be transferred to the susceptor 4.

Thus, the semiconductor wafer 1 is moved to the susceptor 4
Performing the warp recovery operation on the susceptor 4 can be reliably prevented, and as a result, the generation and winding of foreign matter from the semiconductor wafer 1 on the susceptor 4 can be reliably prevented.

As described above, the invention made by the inventor has been specifically described based on the embodiments of the present invention. However, the present invention is not limited to the embodiments of the present invention, and does not depart from the gist of the invention. It is needless to say that various changes can be made.

For example, in the above embodiment, the signal based on the shape of the specific portion of the semiconductor wafer 1 registered in the control unit 7 in advance and the shape of the specific portion of the semiconductor wafer 1 at the time of warping photographed by the CCD camera 9 are used. The control unit 7 recognizes that the warpage of the semiconductor wafer 1 has been recovered from the comparison with the signal, and thereby the transfer method of transferring the semiconductor wafer 1 from the lift pins 6 to the susceptor 4 has been described. The method may be a method in which a predetermined time for completely recovering the warp on the lift pins 6 is set in advance, and after the predetermined time has elapsed, the semiconductor wafer 1 is transferred from the lift pins 6 to the susceptor 4.

That is, this transfer method uses the lift pins 6
A predetermined time during which the warp of the semiconductor wafer 1 relayed and supported by the semiconductor wafer 1 is recovered is derived in advance, and the predetermined time is registered in the control unit 7 in advance, so that the semiconductor wafer 1 waits on the lift pins 6 for the predetermined time. The semiconductor wafer 1 is transferred from 6 to the susceptor 4.

Here, in another embodiment shown in FIG. 7, the semiconductor wafer 1 is kept on standby for 30 seconds (about 32 seconds in actual operation) on the lift pins 6 and then transferred to the susceptor 4. The elapsed time and the amount of warpage (a /
L, b / L).

According to FIG. 7, the warpage of the semiconductor wafer 1 has been recovered when about 28 seconds have passed on the lift pins 6, so that the semiconductor wafer 1 has been registered in the control unit 7 for a predetermined time (the semiconductor wafer 1 It can be seen that the time during which the process waits is set to at least about 30 seconds, preferably about 33 to 35 seconds.

As a result, in the epitaxial growth apparatus, the CCD camera 9 and the like become unnecessary, so that the apparatus configuration can be simplified, and the procedure for controlling the transfer method in the control section 7 can be simplified.

Further, since the monitoring means such as the CCD camera 9 becomes unnecessary, the reaction vessel 2 can be made of an opaque material, and the manufacturing cost of the epitaxial growth apparatus can be reduced.

In the above embodiment, the shape of the specific portion of the semiconductor wafer 1 near its center (the shape of the lamp 3 and the reflecting plate 10 reflected and projected near the center of the semiconductor wafer 1). ) Has been described, but the monitoring location on the semiconductor wafer 1 is
It may be another specific site.

For example, a specific portion which can take in the outer peripheral shape of the semiconductor wafer 1 or the patterning shape formed on the main surface of the semiconductor wafer 1 as an image signal and compare it with the signal of the shape at the time of non-warping. Others may be used.

Accordingly, the location of the CCD camera 9 is not limited to the location above the reaction vessel 2 but may be any location where the shape change of the semiconductor wafer 1 can be monitored.
It is not limited.

As another method of monitoring the semiconductor wafer 1, an infrared camera may be used instead of the CCD camera 9.

That is, the infrared camera is installed at a location where the in-plane temperature of the semiconductor wafer 1 placed in the reaction vessel 2 can be monitored, and thereby the temperature distribution in the plane of the semiconductor wafer 1 is measured.

Thus, when the temperature distribution reaches the allowable value, the transfer of the semiconductor wafer 1 from the lift pins 6 to the susceptor 4 is started.

That is, instead of visually grasping the shape change due to the warpage of the semiconductor wafer 1, the temperature distribution in the plane of the semiconductor wafer 1 is monitored, and when the temperature distribution becomes uniform, the warpage is eliminated. To judge.

According to this, substantially the same operation and effect as those of the above embodiment can be obtained.

In the above embodiment, the case where the semiconductor wafer 1 is made to stand by on the lift pins 6 as the wafer transfer member when the semiconductor wafer 1 is transferred onto the susceptor 4 has been described. When the member is a gripping robot (not shown) capable of handling the semiconductor wafer 1 or the like, it is not particularly necessary to wait the semiconductor wafer 1 on the lift pins 6 serving as the wafer transfer member.
The semiconductor wafer 1 may be held on the wafer mounting surface 4a of the susceptor 4 by holding the semiconductor wafer 1 until the warp of the semiconductor wafer 1 is recovered by the holding robot.

As a result, the lift pins 6 become unnecessary, and the structure of the semiconductor manufacturing apparatus (epitaxial growth apparatus) can be further simplified.

In the above embodiment, the case where the value of L in the non-warped semiconductor wafer 1 (the diameter of the non-warped semiconductor wafer 1) is registered in the control unit 7 in advance has been described. The value of L may not be registered in advance, and the value of L may be calculated from the shape of the non-warped semiconductor wafer 1 during monitoring by the CCD camera 9.

[0111]

Advantageous effects obtained by typical ones of the inventions disclosed in the present application will be briefly described.
It is as follows.

(1). When the semiconductor wafer is transferred from the wafer transfer member to the wafer support, control is performed so that the warped semiconductor wafer that has been heated and warped is recovered on the wafer transfer member and then transferred to the wafer support. Therefore, once the warped semiconductor wafer recovers on the wafer transfer member,
By transferring the semiconductor wafer to the wafer support, the contact between the back edge of the semiconductor wafer and the susceptor is reduced, foreign substances can be prevented from being generated and rolled up, and the back edge of the semiconductor wafer can be prevented from being damaged.

(2). According to (1), the quality of the semiconductor wafer can be improved.

[Brief description of the drawings]

FIG. 1 is a conceptual diagram showing a partial cross section of an example of an embodiment of the structure of a semiconductor manufacturing apparatus (epitaxial growth apparatus) according to the present invention.

FIGS. 2 (a), (b), (c), (d), and (e) are transfer procedure diagrams showing an example of a semiconductor wafer transfer method according to an embodiment of the present invention in a partial cross section. It is.

3 (a), (b), and (c) are monitor result diagrams showing a monitor state of a semiconductor wafer in the epitaxial growth apparatus shown in FIG. 1, (a) is a monitor diagram at the time of non-warpage,
(B) is a monitor diagram at the time of warpage, and (c) is a distortion principle diagram.

FIGS. 4 (a), (b), (c), (d), and (e) are transfer procedure diagrams showing a partial cross section of Comparative Example 1 with respect to the semiconductor wafer transfer method of the present invention. .

FIG. 5 is a test result diagram showing a warped state of the semiconductor wafer when the semiconductor wafer is transferred according to Comparative Example 1 shown in FIG.

FIGS. 6 (a), (b), (c), (d), and (e) are transfer procedure diagrams showing a partial cross section of Comparative Example 2 with respect to the semiconductor wafer transfer method of the present invention. .

FIG. 7 is a test result diagram showing a warped state of a semiconductor wafer when a semiconductor wafer is transferred by a semiconductor wafer transfer method according to another embodiment of the present invention.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Semiconductor wafer 1a Back surface edge part 2 Reaction container 2a Upper dome 2b Lower dome 3 Lamp (heating means) 4 Susceptor (wafer support) 4a Wafer mounting surface 5 Transfer blade (wafer transfer member) 6 Lift pin (wafer transfer member) 7) Control unit 8 Image 8a Lamp reflection image 8b Reflector reflection image 9 CCD camera (monitor means) 10 Reflector

Claims (9)

[Claims] 1. A semiconductor manufacturing apparatus for heat-treating a semiconductor wafer, comprising: a reaction vessel in which heat treatment of the semiconductor wafer is performed; heating means for heating the semiconductor wafer during heat treatment; A wafer support supporting the semiconductor wafer during heat treatment, and the semiconductor warped by being loaded into the reaction container when the semiconductor wafer is transferred to the wafer support in the reaction container. And a control unit for controlling the transfer after the wafer warpage is recovered. 2. A semiconductor manufacturing apparatus for heat-treating a semiconductor wafer, comprising: a reaction vessel in which the heat treatment of the semiconductor wafer is performed; heating means for heating the semiconductor wafer during the heat treatment; A wafer support that supports the semiconductor wafer during heat treatment, a wafer transfer member that guides the semiconductor wafer into and out of the reaction vessel, and a transfer of the semiconductor wafer from the wafer transfer member to the wafer support. A wafer transfer member that relays and supports the semiconductor wafer; and the semiconductor that has been heated and warped when the semiconductor wafer is transferred from the wafer transfer member to the wafer support via the wafer transfer member. After the wafer has recovered from warping,
And a control unit for controlling the transfer. 3. The semiconductor manufacturing apparatus according to claim 2, further comprising: a monitor unit configured to capture an image of the semiconductor wafer relay-supported by the wafer transfer member and connected to the control unit. Based on the image of the semiconductor wafer at the time of warpage taken by the means,
The control unit compares the shape of the specific portion of the semiconductor wafer at the time of warpage with the shape of the specific portion at the time of non-warpage,
A semiconductor manufacturing apparatus, wherein the semiconductor wafer is transferred from the wafer transfer member to the wafer support table after the shapes of the two become the same. 4. The semiconductor manufacturing apparatus according to claim 3, wherein the specific portion is a central portion of the semiconductor wafer,
A semiconductor manufacturing apparatus for monitoring the shape of the heating means reflected on the central portion of the semiconductor wafer and the reflection plate of the heating means. 5. The semiconductor manufacturing apparatus according to claim 1, wherein the semiconductor manufacturing apparatus is an epitaxial growth apparatus for forming a single-crystal thin film on the semiconductor wafer. 6. A method for transferring a semiconductor wafer used in a semiconductor manufacturing apparatus for performing a heat treatment on a semiconductor wafer, comprising: loading the semiconductor wafer into a reaction vessel of the semiconductor manufacturing apparatus; When transferring the semiconductor wafer to an installed wafer support and performing heat treatment, after the semiconductor wafer that has been heated and warped by being loaded into the reaction vessel recovers from warpage, the semiconductor wafer is removed. Transferring a semiconductor wafer to a wafer support table. 7. A method of transferring a semiconductor wafer used in a semiconductor manufacturing apparatus for performing a heat treatment on a semiconductor wafer, wherein the semiconductor wafer is guided by a wafer transfer member and is placed in a reaction vessel of the semiconductor manufacturing apparatus. Loading the semiconductor wafer from the wafer transfer member by a wafer transfer member, relaying and supporting the semiconductor wafer by the wafer transfer member, and transferring the semiconductor wafer to a wafer support table installed in the reaction vessel. When transferring the semiconductor wafer and performing a heat treatment, after the warp of the semiconductor wafer that has been heated and warped by being loaded into the reaction container is recovered on the wafer transfer member, the semiconductor wafer is transferred to the reaction chamber. Transferring a semiconductor wafer from the wafer transfer member to the wafer support table. 8. The method for transferring a semiconductor wafer according to claim 7, wherein an image of the semiconductor wafer relayed and supported by the wafer transfer member is taken into a control unit by a monitor, and the control unit warps the image. The shape of the specific portion of the semiconductor wafer at the time and the shape of the specific portion at the time of non-warpage are compared, and after both shapes become the same, the semiconductor wafer is transferred from the wafer transfer member to the wafer support table. A method for transferring a semiconductor wafer, comprising transferring the semiconductor wafer. 9. The method for transferring a semiconductor wafer according to claim 7, wherein a predetermined time for recovering the warpage of the semiconductor wafer relay-supported by the wafer transfer member is derived in advance, and the predetermined time is determined. A semiconductor wafer, wherein the semiconductor wafer is transferred from the wafer transfer member to the wafer support table after the semiconductor wafer is kept on standby for the predetermined time on the wafer transfer member by registering in advance. How to transfer.