JPH102913A - Semiconductor acceleration sensor - Google Patents

Semiconductor acceleration sensor

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Publication number
JPH102913A
JPH102913A JP8155699A JP15569996A JPH102913A JP H102913 A JPH102913 A JP H102913A JP 8155699 A JP8155699 A JP 8155699A JP 15569996 A JP15569996 A JP 15569996A JP H102913 A JPH102913 A JP H102913A
Authority
JP
Japan
Prior art keywords
acceleration sensor
electrode
sensor chip
substrate
main mounting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP8155699A
Other languages
Japanese (ja)
Inventor
Michio Nemoto
道夫 根本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokin Corp
Original Assignee
Tokin Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokin Corp filed Critical Tokin Corp
Priority to JP8155699A priority Critical patent/JPH102913A/en
Publication of JPH102913A publication Critical patent/JPH102913A/en
Withdrawn legal-status Critical Current

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Abstract

PROBLEM TO BE SOLVED: To provide an acceleration sensor, which can be assembled readily and can be constituted at a low cost by using a relatively small substrate. SOLUTION: This sensor has the structure, wherein an IC circuit substrate 12' as a signal processing substrate and an acceleration sensor chip 11' are laminated and tightly bonded on a main mounting substrate 13'. The surface area of the main mounting substrate 13' is reduced to the about half of a conventional substrate. Furthermore, an electrode taking-out part is provided at the surface part of each portion. These parts are conducted to the conductor pattern parts provided at the main mounting substrate 13' under the state, wherein these parts are mutually laminated in this structure. Since the dimensions of the respective substrates at the acceleration sensor chip 11' are unified and connecting parts to external conductive connection members are omitted, the assembling can be performed by the bonding of one time by soldering in comparison with a conventional sensor, and the connecting process-step using bonding wire and the like can be eliminated.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、自動車の衝突検出
や姿勢制御装置における姿勢制御等の用途に使用される
半導体加速度センサに関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor acceleration sensor used for purposes such as collision detection of an automobile and attitude control in an attitude control device.

【0002】[0002]

【従来の技術】従来、この種の静電容量式半導体加速度
センサの要部である加速度センサチップは、例えば図3
(a)にその一方向における断面側面図を,図3(b)
にその上面図を示すように構成されている。
2. Description of the Related Art Conventionally, an acceleration sensor chip which is a main part of this type of capacitance type semiconductor acceleration sensor is, for example, shown in FIG.
FIG. 3A is a cross-sectional side view in one direction, and FIG.
FIG.

【0003】この加速度センサチップ11では、重りと
しての機能を兼用した凸状の可動電極部1aとこの可動
電極部1aの周囲に位置される凹状の梁部1bとが形成
されたシリコン基板1の一面側,他面側[図3(a)で
は上側,下側]に対し、それぞれ一対の絶縁基板2,3
が静電接合等でシリコン基板1を挟み込んで密着接合さ
れている。一方の絶縁基板2に設けられた段差部2aに
は貫通孔2bを含むように固定電極部4が設けられ、他
方の絶縁基板3に設けられた段差部3aには貫通孔3b
を含むように固定電極部5が設けられている。ここで一
対の絶縁基板2,3は可動電極部1aと離間された収納
空間をそれぞれに設けられた段差部2a,3aの組み合
わせで成すが、段差部2a,3aにそれぞれ設けられた
固定電極部4,5は可動電極部1aとの間で静電容量を
成す。又、絶縁基板2の外側の一部には電極取り出し部
6が設けられ、絶縁基板3の外側の一部には貫通孔3c
を含むように電極取り出し部7,他部には電極取り出し
部8,9が設けられている。更に、電極取り出し部6は
加速度センサチップ11の一端側で導電ペースト部10
により電極取り出し部9との間で接続されている。因み
に、シリコン基板1には低抵抗タイプのシリコンが用い
られている。
In the acceleration sensor chip 11, a silicon substrate 1 on which a convex movable electrode portion 1a also serving as a weight and a concave beam portion 1b located around the movable electrode portion 1a are formed. A pair of insulating substrates 2 and 3 are provided on one side and the other side (upper and lower sides in FIG. 3A).
Are tightly joined by sandwiching the silicon substrate 1 by electrostatic bonding or the like. A fixed electrode portion 4 is provided on a step portion 2a provided on one insulating substrate 2 so as to include a through hole 2b, and a through hole 3b is provided on a step portion 3a provided on the other insulating substrate 3.
The fixed electrode unit 5 is provided so as to include Here, the pair of insulating substrates 2 and 3 are formed by a combination of steps 2a and 3a provided in a storage space separated from the movable electrode section 1a, respectively, and fixed electrode sections provided in the steps 2a and 3a, respectively. Reference numerals 4 and 5 form a capacitance with the movable electrode portion 1a. An electrode take-out portion 6 is provided on a part of the outside of the insulating substrate 2, and a through hole 3c is provided on a part of the outside of the insulating substrate 3.
Are provided, and the other portions are provided with electrode take-out portions 8 and 9. Further, the electrode take-out portion 6 is connected to the conductive paste portion 10 at one end of the acceleration sensor chip 11.
Is connected to the electrode take-out unit 9 by the Incidentally, low-resistance silicon is used for the silicon substrate 1.

【0004】この加速度センサチップ11による加速度
検出は、加速度が生じると可動電極1aが慣性力を受け
て変位し、これに伴ってセンサ内部の空間容積相当のコ
ンデンサ部における静電容量値が変化するため、この静
電容量値の変化を電気回路で電気的に検出することによ
って行われる。
In the acceleration detection by the acceleration sensor chip 11, when the acceleration is generated, the movable electrode 1a is displaced by the inertial force, and the capacitance value in the capacitor portion corresponding to the space volume inside the sensor changes accordingly. Therefore, the change is performed by electrically detecting the change in the capacitance value using an electric circuit.

【0005】ところで、このような加速度センサチップ
11は、図4に示されるように、所定箇所に外部リード
板14が設けられた主実装用基板13が有する切り欠き
部にベアチップ形態の専用IC回路基板12と共に平面
的に実装され、加速度センサチップ11の各部が主実装
用基板13に設けられると共に、外部リード板14と接
続された導体パターン部との間でボンデングワイヤ等に
より接続されることで半導体加速度センサとして構成さ
れる。
As shown in FIG. 4, such an acceleration sensor chip 11 has a dedicated IC circuit in the form of a bare chip in a cutout portion of a main mounting substrate 13 provided with an external lead plate 14 at a predetermined position. The components of the acceleration sensor chip 11 are mounted on the main mounting substrate 13 in a planar manner together with the substrate 12, and are connected to the conductor pattern portion connected to the external lead plate 14 by a bonding wire or the like. And is configured as a semiconductor acceleration sensor.

【0006】[0006]

【発明が解決しようとする課題】上述した半導体加速度
センサの場合、加速度センサチップ及びIC回路基板を
主実装用基板上に平面的に接着固定し、これらの各電極
取り出し部と主実装用基板に設けられた導体パターン部
の所定箇所とをボンデングワイヤ等により接続する必要
があるが、このような接着工程や接続工程には時間や手
間がかかってしまうので、組み立てが煩雑であるという
問題がある。
In the case of the above-described semiconductor acceleration sensor, the acceleration sensor chip and the IC circuit board are bonded and fixed in a plane on the main mounting board, and these electrode take-out portions and the main mounting board are mounted on the main mounting board. Although it is necessary to connect a predetermined portion of the provided conductor pattern portion with a bonding wire or the like, such a bonding process and a connection process require time and labor, and thus, there is a problem that assembly is complicated. is there.

【0007】又、主実装用基板に対して加速度センサチ
ップ及びIC回路基板3を平面的に搭載する構成上、主
実装用基板には表面積の大きい大型なものを必要として
しまうため、その価格が高くなってしまうという問題も
ある。
In addition, since the acceleration sensor chip and the IC circuit board 3 are mounted two-dimensionally on the main mounting board, the main mounting board requires a large-sized one having a large surface area. There is also a problem that it becomes expensive.

【0008】本発明は、このような問題点を解決すべく
なされたもので、その技術的課題は、組み立てを簡易に
行い得ると共に、比較的小型の基板を用いて安価に構成
され得る半導体加速度センサを提供することにある。
SUMMARY OF THE INVENTION The present invention has been made to solve such a problem, and its technical problem is that a semiconductor acceleration which can be easily assembled and which can be formed at a low cost by using a relatively small substrate. It is to provide a sensor.

【0009】[0009]

【課題を解決するための手段】本発明によれば、シリコ
ン基板の一側面,他側面を一対の絶縁基板でそれぞれ挟
み込んで接合され,且つ所定の表面箇所に外部導電接触
用の第1の電極取り出し部が設けられた加速度センサチ
ップと、所定の表面箇所に第1の電極取り出し部との間
で接触される外部導電接触用の第2の電極取り出し部が
設けられ,且つ加速度付与時に加速度センサチップから
得られる検出信号を処理する信号処理用基板と、第2の
電極取り出し部との間で接触される所定の導電パターン
部を有し,且つ信号処理用基板及び加速度センサチップ
を装着するための主実装用基板とを含み、更に、主実装
用基板上に信号処理用基板,及び加速度センサチップが
この順で積層密着接合されて第1の電極取り出し部が第
2の電極取り出し部を介して所定の導電パターン部と導
通可能な半導体加速度センサが得られる。
According to the present invention, one side surface and the other side surface of a silicon substrate are joined by being sandwiched between a pair of insulating substrates, and a first electrode for external conductive contact is provided on a predetermined surface portion. An acceleration sensor chip provided with a take-out portion, and a second electrode take-out portion for external conductive contact provided between a first electrode take-out portion at a predetermined surface location, and an acceleration sensor at the time of applying acceleration. A signal processing substrate for processing a detection signal obtained from the chip, and a predetermined conductive pattern portion to be brought into contact with the second electrode extraction portion; and for mounting the signal processing substrate and the acceleration sensor chip. And a signal processing substrate and an acceleration sensor chip are laminated and adhered in this order on the main mounting substrate, and a first electrode extraction portion is formed by a second electrode extraction portion. The semiconductor acceleration sensor capable conduction with a predetermined conductive pattern section via is obtained.

【0010】又、本発明によれば、上記半導体加速度セ
ンサにおいて、加速度センサチップ,信号処理用基板,
及び主実装用基板は1回の接合処理で機械的固定且つ電
気的接続が行われて一体的に形成された半導体加速度セ
ンサが得られる。
According to the present invention, in the semiconductor acceleration sensor, an acceleration sensor chip, a signal processing board,
In addition, the main mounting board is mechanically fixed and electrically connected by a single bonding process to obtain a semiconductor acceleration sensor integrally formed.

【0011】更に、本発明によれば、上記何れかの半導
体加速度センサにおいて、加速度センサチップに関し
て、シリコン基板は重りを兼用した凸状の可動電極部と
該可動電極部の周囲に位置される凹状の梁部とを有し、
一対の絶縁基板は可動電極部と離間された収納空間をそ
れぞれに設けられた段差部の組み合わせで成すもので、
段差部には可動電極部との間で静電容量を成す固定電極
部が設けられ、第1の電極取り出し部は可動電極部及び
固定電極部にそれぞれ導通可能に接続されたものを含む
半導体加速度センサが得られる。
Further, according to the present invention, in any one of the semiconductor acceleration sensors described above, with respect to the acceleration sensor chip, the silicon substrate is formed of a convex movable electrode portion also serving as a weight and a concave movable electrode portion located around the movable electrode portion. Having a beam portion,
The pair of insulating substrates are formed by combining the movable electrode portion and the storage space separated from each other by the step portions provided respectively,
The step portion is provided with a fixed electrode portion forming a capacitance between the movable electrode portion and the movable electrode portion, and the first electrode take-out portion is a semiconductor acceleration including one connected to the movable electrode portion and the fixed electrode portion in a conductive manner. A sensor is obtained.

【0012】[0012]

【作用】本発明の半導体加速度センサでは、信号処理用
基板(IC回路基板),及び加速度センサチップを主実
装用基板上に積層密着接合した構造としているので、主
実装用基板の表面積が従来のものの半分程度に縮小され
ている。又、各部の表面箇所には電極取り出し部が設け
られ、これらが互いに積層状態で主実装用基板に設けら
れた導体パターン部と導通される構造であると共に、加
速度センサチップにおける各基板の寸法が統一されて外
部導電接続部材(外部リード線等)に対する接続部分が
排除されているため、従来のようなボンデングワイヤ等
を用いての接続工程を不要とし、ハンダ処理を要しての
リフロー工程等の一括工程において1回の接合処理を行
うだけで機械的固定及び電気的接続を可能としている。
According to the semiconductor acceleration sensor of the present invention, the signal processing substrate (IC circuit substrate) and the acceleration sensor chip are laminated and bonded on the main mounting substrate, so that the surface area of the main mounting substrate is smaller than that of the conventional one. It has been reduced to about half the size. In addition, an electrode extraction portion is provided at a surface portion of each portion, and these are configured to be electrically connected to a conductor pattern portion provided on the main mounting board in a laminated state, and that the dimensions of each substrate in the acceleration sensor chip are reduced. Since the connection portion to the external conductive connection member (external lead wire, etc.) is unified, the connection process using a conventional bonding wire or the like is not required, and the reflow process requires soldering. And the like, it is possible to perform mechanical fixing and electrical connection by performing only one joining process.

【0013】[0013]

【発明の実施の形態】以下に実施例を挙げ、本発明の半
導体加速度センサについて、図面を参照して詳細に説明
する。
Embodiments of the present invention will be described below in detail with reference to the accompanying drawings.

【0014】図1は、本発明の一実施例に係る半導体加
速度センサの外観構成を斜視図により示したものであ
る。
FIG. 1 is a perspective view showing an external configuration of a semiconductor acceleration sensor according to an embodiment of the present invention.

【0015】この半導体加速度センサは、主実装用基板
13´上に信号処理用基板としてのIC回路基板12
´,及び加速度センサチップ11´がこの順で積層密着
接合されて成っている。
This semiconductor acceleration sensor has an IC circuit board 12 as a signal processing board on a main mounting board 13 '.
And the acceleration sensor chip 11 'are laminated and adhered in this order.

【0016】このうち、主実装用基板13´は図4に示
したもの(主実装用基板13)と比べて表面積が半分程
度に縮小されたものになっており、切り欠き部が形成さ
れずに平面板となっている点で相違しているが、所定箇
所に外部リード板14及び導電パターン部が設けられて
いる点は共通している(但し、導電パターン部のパター
ン自体は切り欠き部が無い平面板であることにより従来
のものとは形状及び寸法が相違している)。
Of these, the main mounting substrate 13 'has a surface area reduced to about half that of the substrate shown in FIG. 4 (main mounting substrate 13), and no cutout portion is formed. However, the external lead plate 14 and the conductive pattern portion are provided at predetermined positions in common (however, the pattern of the conductive pattern portion is notched. The shape and dimensions are different from those of the prior art due to the fact that the flat plate is not provided with a flat plate.

【0017】加速度センサチップ11´は、図3
(a),(b)で説明したもの(加速度センサチップ1
1)と比べると基本構成は同じであるため、細部構成の
説明は省略するが、ここでは各基板(シリコン基板1及
び一対の絶縁基板2,3)の寸法が統一されており、外
部リード線等の外部導電接続部材に対する接続部分が排
除されている点で相違している。
The acceleration sensor chip 11 'is shown in FIG.
(A) and (b) (the acceleration sensor chip 1
Since the basic configuration is the same as 1), the detailed configuration is not described, but here the dimensions of each substrate (silicon substrate 1 and a pair of insulating substrates 2 and 3) are unified and external lead wires are used. And the like, in that a connection portion to an external conductive connection member such as the above is excluded.

【0018】IC回路基板12´は、図4に示したもの
(IC回路基板12)と比べて寸法はほぼ同程度である
が、その表面箇所に設けられた電極取り出し部の配置パ
ターンが相違している。
The size of the IC circuit board 12 'is substantially the same as that of the IC circuit board 12 shown in FIG. 4 (IC circuit board 12), but the arrangement pattern of the electrode take-out portions provided on the surface is different. ing.

【0019】即ち、この半導体加速度センサでは、加速
度センサチップ11´の所定の表面箇所に外部導電接触
用の第1の電極取り出し部が設けられ、この第1の電極
取り出し部には可動電極部1a(シリコン基板1)及び
固定電極部4,5にそれぞれ導通可能に接続されたもの
(電極取り出し部6〜9)が含まれている。IC回路基
板12´は加速度付与時に加速度センサチップ11´か
ら得られる検出信号を処理するが、その所定の表面箇所
には図2(a)の上面図,図2(b)の側面図,図2
(c)の底面図にそれぞれ示されるように、外部導電接
触用の第2の電極取り出し部12a〜12iが設けられ
ている。これらの第2の電極取り出し部12a〜12i
は、第1の電極取り出し部のうちの特定の該当するもの
(電極取り出し部7,8,9)との間で接触されるもの
(電極取り出し部12a〜12c)とIC回路基板12
´及び加速度センサチップ11´を装着するための主実
装用基板13´に設けられた所定の導電パターン部との
間で接触されるもの(電極取り出し部12d〜12i)
とに分けられる。
That is, in this semiconductor acceleration sensor, a first electrode extraction portion for external conductive contact is provided on a predetermined surface of the acceleration sensor chip 11 ', and the first electrode extraction portion has a movable electrode portion 1a. (Silicon substrate 1) and those (electrode extraction portions 6 to 9) which are connected to the fixed electrode portions 4 and 5 so as to be conductive, respectively, are included. The IC circuit board 12 'processes a detection signal obtained from the acceleration sensor chip 11' at the time of applying an acceleration, and a predetermined surface portion thereof has a top view of FIG. 2A, a side view of FIG. 2
As shown in the bottom view of (c), second electrode extraction portions 12a to 12i for external conductive contact are provided. These second electrode extraction portions 12a to 12i
Are the first electrode take-out parts (electrode take-out parts 12a to 12c) that come into contact with a specific corresponding part (electrode take-out parts 7, 8, 9) and the IC circuit board 12
And a predetermined conductive pattern portion provided on a main mounting substrate 13 'for mounting the acceleration sensor chip 11' (electrode extraction portions 12d to 12i)
And divided into

【0020】従って、この半導体加速度センサでは、主
実装用基板13´上にIC回路基板12´及び加速度セ
ンサチップ11´が積層密着された状態で第1の電極取
り出し部(電極取り出し部6〜9)が第2の電極取り出
し部(電極取り出し部12a〜12i)を介して所定の
導電パターン部と導通可能になっている。
Therefore, in this semiconductor acceleration sensor, the first electrode take-out portion (the electrode take-out portions 6 to 9) is provided in a state where the IC circuit board 12 'and the acceleration sensor chip 11' are stacked and adhered on the main mounting board 13 '. ) Can be electrically connected to a predetermined conductive pattern portion via the second electrode extraction portions (electrode extraction portions 12a to 12i).

【0021】ところで、このような半導体加速度センサ
は、主実装用基板13´,IC回路基板12´,及び加
速度センサチップ11´を積層した構造になってるた
め、従来のようなボンデングワイヤ等を用いての接続工
程を不要とし、ハンダ処理を要してのリフロー工程等の
一括工程において1回の接合処理を行うだけで機械的固
定且つ電気的接続が行われ、各部を一体化させて容易に
組み立てを行うことができる。
Incidentally, such a semiconductor acceleration sensor has a structure in which a main mounting board 13 ', an IC circuit board 12', and an acceleration sensor chip 11 'are laminated, so that a conventional bonding wire or the like is used. It eliminates the need for a connecting process, and provides a mechanical fixation and electrical connection by performing only one joining process in a batch process such as a reflow process that requires a soldering process. Can be assembled.

【0022】そこで、以下はこの半導体加速度センサに
おける要部の製造及び組み立ての手順を簡単に説明す
る。
The procedure for manufacturing and assembling the main parts of the semiconductor acceleration sensor will be briefly described below.

【0023】先ず、IC回路基板12´に関して主実装
用基板13´側の電極取り出し部12d〜12iを形成
するために、ペーストハンダ印刷によりIC回路基板1
2´の底面にペーストハンダを印刷する一方、同様に加
速度センサチップ11´側の電極取り出し部12a〜1
2cを形成するために、ペーストハンダ印刷によりIC
回路基板12´の上面にペーストハンダを印刷する。
First, in order to form the electrode extraction portions 12d to 12i on the main mounting substrate 13 'side with respect to the IC circuit board 12', the IC circuit board 1 is formed by paste solder printing.
While the paste solder is printed on the bottom surface of 2 ′, the electrode take-out portions 12a to 1a on the acceleration sensor chip 11 ′ side are similarly printed.
IC by paste solder printing to form 2c
The paste solder is printed on the upper surface of the circuit board 12 '.

【0024】次に、主実装用基板13´上にIC回路基
板12´を仮固定した後、更にその上に加速度センサチ
ップ11´を仮固定して積層し、リフロー工程として全
体をリフロー炉内に通過させてペーストハンダを溶かす
ことで各部の機械的固定且つ電気的接続を行う。これに
より、図1に示されるような各部が一体的に積層密着接
合された半導体加速度センサが組み立て製造される。
Next, after temporarily fixing the IC circuit board 12 'on the main mounting board 13', the acceleration sensor chip 11 'is further temporarily fixed thereon and laminated thereon. To melt the paste solder to make the components mechanically fixed and electrically connected. As a result, a semiconductor acceleration sensor in which the components shown in FIG. 1 are integrally laminated and adhered to each other is assembled and manufactured.

【0025】[0025]

【発明の効果】以上に述べた通り、本発明の半導体加速
度センサによれば、信号処理用基板及び加速度センサチ
ップを主実装用基板上に積層密着接合した構造であっ
て、各部の表面箇所に設けた電極取り出し部が互いに積
層状態で主実装用基板に設けられた導体パターン部と導
通される構造であると共に、加速度センサチップにおけ
る各基板の寸法が統一されて外部導電接続部材に対する
接続部分が排除されているため、従来のようなボンデン
グワイヤ等を用いての接続工程を不要とし、ハンダ処理
を要してのリフロー工程等の一括工程において1回の接
合処理を行うだけで機械的固定及び電気的接続が可能に
なる。この結果、組み立て製造の簡易化や迅速化が計ら
れるようになると共に、各基板の縮小化(特に、主実装
用基板は従来のものの半分の表面積のものにすることが
できる)が具現されて経費の低減化が計られるようにな
る。
As described above, according to the semiconductor acceleration sensor of the present invention, the signal processing board and the acceleration sensor chip are laminated and adhered on the main mounting board, and the surface of each part is The electrode extraction portions provided are in a structure in which they are electrically connected to the conductor pattern portion provided on the main mounting board in a stacked state, and the dimensions of each substrate in the acceleration sensor chip are unified so that the connection portion to the external conductive connection member is formed. Since it has been eliminated, the conventional connection process using a bonding wire or the like is not required, and only one joining process is performed in a batch process such as a reflow process that requires soldering, so that it is mechanically fixed. And electrical connection becomes possible. As a result, simplification and speeding up of the assembly and manufacturing can be achieved, and the size of each substrate can be reduced (especially, the main mounting substrate can be reduced to half the surface area of the conventional one). Costs can be reduced.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の一実施例に係る半導体加速度センサの
外観を示した斜視図である。
FIG. 1 is a perspective view showing the appearance of a semiconductor acceleration sensor according to one embodiment of the present invention.

【図2】図1に示す半導体加速度センサに用いられるI
C回路基板及びその電極取り出し部に関する配置パター
ンを示したものであり、(a)は上面図に関するもの,
(b)は一方向における側面図に関するもの,(c)は
底面図に関するものである。
FIG. 2 shows an I used in the semiconductor acceleration sensor shown in FIG.
FIG. 3A shows an arrangement pattern relating to a C circuit board and an electrode extraction portion thereof, FIG.
(B) relates to a side view in one direction, and (c) relates to a bottom view.

【図3】従来の半導体加速度センサの要部である加速度
センサチップの基本構成を示したものであり、(a)は
一方向における断面側面図に関するもの,(b)は上面
図に関するものである。
3A and 3B show a basic configuration of an acceleration sensor chip which is a main part of a conventional semiconductor acceleration sensor, wherein FIG. 3A relates to a sectional side view in one direction, and FIG. 3B relates to a top view. .

【図4】図4示す加速度センサチップを備えた半導体加
速度センサの外観を示した斜視図である。
FIG. 4 is a perspective view showing the appearance of a semiconductor acceleration sensor including the acceleration sensor chip shown in FIG.

【符号の説明】[Explanation of symbols]

1 シリコン基板 1a 可動電極部 1b 梁部 2,3 絶縁基板 2a,3a 段差部 2b,3b,3c 貫通孔部 4,5 固定電極部 6〜9,12a〜12i 電極取り出し部 10 導電ペースト部 11,11´ 加速度センサチップ 12,12´ IC回路基板 13,13´ 主実装用基板 14 外部リード板 DESCRIPTION OF SYMBOLS 1 Silicon substrate 1a Movable electrode part 1b Beam part 2,3 Insulating substrate 2a, 3a Step part 2b, 3b, 3c Through-hole part 4,5 Fixed electrode part 6-9,12a-12i Electrode extraction part 10 Conductive paste part 11, 11 'acceleration sensor chip 12, 12' IC circuit board 13, 13 'main mounting board 14 external lead plate

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 シリコン基板の一側面,他側面を一対の
絶縁基板でそれぞれ挟み込んで接合され,且つ所定の表
面箇所に外部導電接触用の第1の電極取り出し部が設け
られた加速度センサチップと、所定の表面箇所に前記第
1の電極取り出し部との間で接触される外部導電接触用
の第2の電極取り出し部が設けられ,且つ加速度付与時
に前記加速度センサチップから得られる検出信号を処理
する信号処理用基板と、前記第2の電極取り出し部との
間で接触される所定の導電パターン部を有し,且つ前記
信号処理用基板及び前記加速度センサチップを装着する
ための主実装用基板とを含み、更に、前記主実装用基板
上に前記信号処理用基板,及び前記加速度センサチップ
がこの順で積層密着接合されて前記第1の電極取り出し
部が前記第2の電極取り出し部を介して前記所定の導電
パターン部と導通可能なことを特徴とする半導体加速度
センサ。
1. An acceleration sensor chip comprising one side surface and the other side surface of a silicon substrate sandwiched and joined by a pair of insulating substrates, and a first electrode extraction portion for external conductive contact provided at a predetermined surface portion. A second electrode extraction portion for external conductive contact with the first electrode extraction portion provided at a predetermined surface location, and processes a detection signal obtained from the acceleration sensor chip when acceleration is applied. Main board for mounting the signal processing board and the acceleration sensor chip, the board having a predetermined conductive pattern portion to be contacted between the signal processing board to be formed and the second electrode take-out section Further, the signal processing substrate and the acceleration sensor chip are laminated and adhered in this order on the main mounting substrate, and the first electrode extraction portion is formed of the second electrode. A semiconductor acceleration sensor capable of conducting with the predetermined conductive pattern portion via a take-out portion.
【請求項2】 請求項1記載の半導体加速度センサにお
いて、前記加速度センサチップ,前記信号処理用基板,
及び前記主実装用基板は1回の接合処理で機械的固定且
つ電気的接続が行われて一体的に形成されたものである
ことを特徴とする半導体加速度センサ。
2. The semiconductor acceleration sensor according to claim 1, wherein the acceleration sensor chip, the signal processing board,
The semiconductor acceleration sensor is characterized in that the main mounting board is mechanically fixed and electrically connected in one joining process to be integrally formed.
【請求項3】 請求項1又は2記載の半導体加速度セン
サにおいて、前記加速度センサチップに関して、前記シ
リコン基板は重りを兼用した凸状の可動電極部と該可動
電極部の周囲に位置される凹状の梁部とを有し、前記一
対の絶縁基板は前記可動電極部と離間された収納空間を
それぞれに設けられた段差部の組み合わせで成すもの
で、前記段差部には前記可動電極部との間で静電容量を
成す固定電極部が設けられ、前記第1の電極取り出し部
は前記可動電極部及び前記固定電極部にそれぞれ導通可
能に接続されたものを含むことを特徴とする半導体加速
度センサ。
3. The semiconductor acceleration sensor according to claim 1, wherein, with respect to the acceleration sensor chip, the silicon substrate has a convex movable electrode portion also serving as a weight and a concave movable electrode portion located around the movable electrode portion. A beam portion, and the pair of insulating substrates are formed by combining the movable electrode portion with a storage space separated from the movable electrode portion. A semiconductor acceleration sensor, comprising: a fixed electrode portion that forms a capacitance according to (1), wherein the first electrode lead-out portion includes one connected to the movable electrode portion and the fixed electrode portion so as to be conductive.
JP8155699A 1996-06-17 1996-06-17 Semiconductor acceleration sensor Withdrawn JPH102913A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8155699A JPH102913A (en) 1996-06-17 1996-06-17 Semiconductor acceleration sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8155699A JPH102913A (en) 1996-06-17 1996-06-17 Semiconductor acceleration sensor

Publications (1)

Publication Number Publication Date
JPH102913A true JPH102913A (en) 1998-01-06

Family

ID=15611594

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8155699A Withdrawn JPH102913A (en) 1996-06-17 1996-06-17 Semiconductor acceleration sensor

Country Status (1)

Country Link
JP (1) JPH102913A (en)

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