JPH10289890A - Semiconductor manufacturing device and substrate cleaning apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a substrate cleaning apparatus capable of uniformly cleaning the entire surface. SOLUTION: A plurality of waste gas exhaust slots are arranged substantially uniformly above a to-be-cleaned object 15, whereby waste gas reacted and generated on the surface of the to-becleaned object 15 is attracted upward without flowing in the transverse direction of the surface of the to-be-cleaned object 15. This makes it possible that fresh reaction gas which is net diluted with the waste gas is uniformly supplied over the entire surface of the to-be- cleaned object 15, thereby preventing the difference in reaction rate between the central portion and the peripheral portion of the to-be-cleaned object 15 from occurring. This also makes it possible to increase overall cleaning rate. This structure is generally applicable to a semiconductor manufacturing device using reaction gas.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing apparatus for performing film formation and etching by introducing a reaction gas into a reaction chamber and reacting the reaction gas with a substrate. The present invention relates to a substrate cleaning apparatus for removing contamination on a substrate surface or removing a photoresist using the same.

[0002]

2. Description of the Related Art For example, in a substrate cleaning apparatus, FIG.
As shown in the figure, ozone (reactive gas)
And irradiates with ultraviolet rays to remove contamination and resist by the oxidizing action of ozone.

[0003]

In the conventional substrate cleaning apparatus, as shown in FIG. 3, a large number of air outlets 31 are provided at the top of the substrate so that ozone is supplied as uniformly as possible to the surface of the substrate. Had been. However, even if the reaction gas is supplied uniformly, the waste gas generated by the reaction on the substrate surface is discharged from the periphery or the lower part of the substrate 30, so that a high concentration is always generated near the center of the substrate 30. In addition, although unreacted reaction gas is supplied, near the periphery of the substrate, waste gas generated near the center is mixed into the reaction gas, and the concentration of the reaction gas decreases. For this reason, a difference occurs in the cleaning effect between the central portion and the peripheral portion.

[0004] In recent years, as the diameter of the substrate has increased, the non-uniformity of the cleaning effect has further increased, which has become a major problem. SUMMARY OF THE INVENTION The present invention has been made to solve such a problem, and an object of the present invention is to provide a substrate cleaning apparatus capable of performing uniform cleaning over the entire surface. Further, the configuration according to the present invention is not limited to a substrate cleaning apparatus, but can be applied to general semiconductor manufacturing apparatuses that perform film formation or etching using a reaction gas, and can be applied to them.

[0005]

Means for Solving the Problems A first aspect of the present invention, which has been made to solve the above-mentioned problems, is a semiconductor manufacturing apparatus in which a substrate is placed in a reaction chamber, and a plurality of inlets arranged substantially uniformly above the substrate. In a semiconductor manufacturing apparatus for discharging a reacted waste gas after introducing a reaction gas from the substrate and reacting on the substrate surface, a plurality of waste gas outlets are arranged substantially evenly on an upper portion of the substrate. It is.

Second, as a substrate cleaning device,
After placing the substrate in the reaction chamber, introducing a reaction gas from a plurality of inlets arranged substantially evenly on the upper portion, and reacting the reaction gas on the substrate surface while irradiating ultraviolet rays with an ultraviolet lamp provided on the substrate, A substrate cleaning apparatus for discharging reacted waste gas is characterized in that a plurality of waste gas discharge ports are arranged substantially equally above the substrate.

[0007]

BEST MODE FOR CARRYING OUT THE INVENTION By arranging a plurality of outlets substantially evenly on the substrate, the waste gas reacting on the substrate surface and the generated waste gas does not flow laterally on the substrate surface.
It will be sucked upward. For this reason, a high-concentration and unreacted reaction gas that is not diluted by the waste gas is uniformly supplied over the entire surface of the substrate, and a difference in the reaction speed between the central portion and the peripheral portion of the substrate is obtained. Will not occur.

[0008]

As described above, in the semiconductor manufacturing apparatus or the substrate cleaning apparatus according to the present invention, the reaction gas is introduced from the inlets arranged substantially evenly over the entire surface of the substrate, and the reaction gas is introduced over the entire surface of the substrate. Since the exhaust gas is discharged from the discharge ports arranged substantially uniformly, there is no difference in the reaction speed between the central portion and the peripheral portion of the substrate, and a uniform reaction is performed on the entire surface. Further, since a high-concentration and unreacted reaction gas which is not always diluted with the waste gas is supplied to each part of the substrate, the reaction speed as a whole is also improved.

[0009]

FIG. 1 shows the structure of an ultraviolet ozone cleaning apparatus 10 according to an embodiment of the present invention. The cleaning device includes a lower unit 11 and an upper unit 12. The lower unit 11 has a stage 13 on which an object to be cleaned 15 such as a wafer is mounted, and the upper unit 12 has a mechanism for introducing ozone as a reaction gas. And an ultraviolet lamp 14. The stage 13 of the lower unit 11 has a built-in heater so that the object 15 to be cleaned
It can be heated to about 0 ° C.

An ozone inlet 16 for introducing ozone is provided above the upper unit 12, and a diffusion chamber 17 is provided below the ozone inlet 16 for diffusing ozone laterally. A diffusion plate 18 is provided substantially at the center of the diffusion chamber 17, and a plurality of discharge ports 20 are provided substantially uniformly on a bottom plate 19 of the diffusion chamber 17. An ozone introduction path 21 extending downward is connected to each discharge port 20.

A reflection plate 22 is provided below the diffusion chamber 17, and the ultraviolet lamp 14 is set in a parallel lamp groove 23 provided in the reflection plate 22. The ozone introduction path 21 extends below the reflection plate 22, and a hole is provided in the reflection plate 22 at a location where each ozone introduction path 21 penetrates so as to surround the ozone introduction path 21. . This hole serves as a discharge port 24 for waste gas from the reaction chamber.

A suction port 25 is provided on a side surface of the upper unit 12 between the bottom plate 19 and the reflection plate 22 of the diffusion chamber 17.

The operation of the cleaning device 10 is as follows. The object to be cleaned 15 such as a wafer is placed on the stage 13 and the upper unit 12 is closed. When the cleaning start switch is turned on, the control unit (not shown) starts energizing the heater of the stage 13. When the temperature of the object to be cleaned 15 rises to a preset temperature, the control unit turns on the ultraviolet lamp 14 and operates the ozone generator and the discharge pump (not shown). Ozone is supplied from the ozone inlet 16 of the upper unit 12 into the diffusion chamber 17, and is supplied to the diffusion plate 1.
8, each outlet 2 has a substantially uniform flow rate.
0 to be cleaned 1 from each ozone introduction passage 21
5 squirts on the upper surface. Ozone is inspired by ultraviolet energy and reacts with contaminants or photoresist on the surface of the object to be cleaned 15 to decompose them. The decomposition products are released from the surface of the object 15 to be cleaned as a gas, whereby the cleaning is performed. Cleaning object 15
The waste gas generated on the surface is discharged from each of the nearest discharge ports 24, sent to a discharge processing device (not shown) through a suction port 25, and processed there.

As described above, the cleaning device 1 of the present embodiment
In the case of 0, since the waste gas generated on the surface of the object 15 to be cleaned is immediately discharged from each of the nearest outlets 24, high-concentration and unreacted ozone is always supplied over the entire surface of the object 15 to be cleaned. And uniform cleaning can be performed, and the processing speed can be improved.

[Brief description of the drawings]

FIG. 1 is a front sectional view of a cleaning device according to an embodiment.

FIG. 2 is a sectional view taken along line II-II of FIG.

FIG. 3 is a side view showing a flow of a reaction gas and a waste gas in a conventional substrate cleaning apparatus.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 10 ... Ultraviolet ozone cleaning apparatus 11 ... Lower unit 12 ... Upper unit 13 ... Stage 14 ... Ultraviolet lamp 15 ... Cleaning object 16 ... Ozone introduction port 17 ... Diffusion chamber 18 ... Diffusion plate 20 ... Discharge port 21 ... Ozone introduction path 22 ... Reflector 23 ... Lamp groove 24 ... Exhaust port 25 ... Suction port

Claims (2)

[Claims] 1. A semiconductor manufacturing apparatus for placing a substrate in a reaction chamber, introducing a reaction gas from a plurality of inlets arranged substantially uniformly above the substrate, reacting the reaction gas on the substrate surface, and discharging the reacted waste gas. 2. The semiconductor manufacturing apparatus according to claim 1, wherein a plurality of waste gas outlets are arranged substantially evenly above the substrate. 2. A substrate is placed in a reaction chamber, a reaction gas is introduced from a plurality of inlets arranged substantially evenly above the substrate, and the reaction gas is irradiated on the substrate surface while being irradiated with ultraviolet rays by an ultraviolet lamp provided above the substrate. What is claimed is: 1. A substrate cleaning apparatus for discharging reacted waste gas after reacting, wherein a plurality of waste gas discharge ports are arranged substantially evenly on an upper portion of the substrate.