JPH10289415A - Manufacturing method for mr head - Google Patents

Manufacturing method for mr head

Info

Publication number
JPH10289415A
JPH10289415A JP9426197A JP9426197A JPH10289415A JP H10289415 A JPH10289415 A JP H10289415A JP 9426197 A JP9426197 A JP 9426197A JP 9426197 A JP9426197 A JP 9426197A JP H10289415 A JPH10289415 A JP H10289415A
Authority
JP
Japan
Prior art keywords
layer
head
resist
film
recording core
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9426197A
Other languages
Japanese (ja)
Inventor
Hiromi Matsuki
ひろみ 松木
Mikiya Kurosu
実喜也 黒須
Toru Katakura
亨 片倉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP9426197A priority Critical patent/JPH10289415A/en
Publication of JPH10289415A publication Critical patent/JPH10289415A/en
Pending legal-status Critical Current

Links

Abstract

PROBLEM TO BE SOLVED: To provide an MR head which is made narrow in the track width of its upper layer recording core. SOLUTION: To form the narrow track width of the upper layer recording core, a groove is formed on an AL2 O3 film 2 covering an intermediate shield 1 by using SiO2 . The SiO2 layer 3 (0.5 μm) is etched by RIE(reactive ion etching) to narrow width. In this case, a Cr layer 4 which does not react in RIE is sputtered and formed on the SiO2 layer 3 to 10 to 20 nm. Consequently, variance in profile is prevented and the track width precision is improved. Further, resist 5 is applied thinly (approximately 0.8 μm), patterning is performed to recording core width, and an opening part of etching the SiO2 layer 3 is formed in the Cr layer 4; and then extraction is good since the film thickness of the resist 5 is thin, and problems of sagging, etc., can be prevented.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、MRヘッドに関
し、特に高精度な挟トラック記録ヘッドを形成する方法
に関する。
[0001] 1. Field of the Invention [0002] The present invention relates to an MR head, and more particularly to a method for forming a high precision narrow track recording head.

【0002】[0002]

【従来の技術】MRヘッドにより容量の高いハードディ
スク装置への記録、再生が可能になってきたが、より高
密度の記憶装置への要請に応じて記録、再生感度の高記
録みつどのMRヘッドが開発、実用化されている。
2. Description of the Related Art Recording and reproduction to and from a high-capacity hard disk device have been made possible by an MR head. However, in response to a demand for a higher-density storage device, an MR head having a higher recording and reproduction sensitivity has been required. Developed and put into practical use.

【0003】典型的なMRヘッドの斜視図を図5に示
す。MR素子8はメディアからの磁界を抵抗変化として
ディテクトする再生専用のセンサであり、このMR素子
8の先端電極12と後端電極13とが、このMR素子8
とMRヘッドの前後に設けられ、バイアスコンダクター
14はMR素子8の磁化を動作領域に向かって切って行
くためにバイアスで磁場を作り印加するためのものであ
り、また記録コイル14は当該コイル14に電流を流し
て磁場を作るものであり、上コア16はコイル14でで
きた磁場をABS面まで電流を引き出すための磁性体で
ある。
FIG. 5 is a perspective view of a typical MR head. The MR element 8 is a read-only sensor that detects the magnetic field from the medium as a resistance change, and the front electrode 12 and the rear electrode 13 of the MR element 8 are connected to the MR element 8.
Are provided before and after the MR head, and a bias conductor 14 is for applying a magnetic field by applying a bias to cut off the magnetization of the MR element 8 toward the operation region. The upper core 16 is a magnetic material for extracting a magnetic field generated by the coil 14 to the ABS surface.

【0004】中間シールド1と下層シールド19はメデ
ィアの円周方向で不必要な信号をMR素子8に吸い込ま
せないようにするための磁気シールドである。
The intermediate shield 1 and the lower shield 19 are magnetic shields for preventing unnecessary signals from being sucked into the MR element 8 in the circumferential direction of the medium.

【0005】図6〜図8には従来の上層記録コア16の
作製のプロセスを示す。図6(a)に示すように中間シ
ールド1とその上部にAl23膜2を形成後、下地スパ
ッタ(Cr/Ti/NiFe)層6を形成し、その上に
下記の様なパターニング条件でレジスト7によりフレー
ムを形成する(図6(b))。
FIGS. 6 to 8 show a process of manufacturing a conventional upper recording core 16. As shown in FIG. 6A, after forming an intermediate shield 1 and an Al 2 O 3 film 2 thereon, an underlying sputter (Cr / Ti / NiFe) layer 6 is formed, and the following patterning conditions are formed thereon. To form a frame with the resist 7 (FIG. 6B).

【0006】このとき、レジスト7の膜厚が5μmと厚
いため、抜けが悪く高精度のプロファイル形成が難しく
なる。 レジストパターニング条件 レジスト レジスト液:SJR−5740 回転数:5000rpm レジスト厚:5μm 露光 ニコンステッパーNSR−1505 2500msec 現像 現像液:450Dev
At this time, since the thickness of the resist 7 is as thick as 5 μm, it is difficult to remove the resist 7 and it is difficult to form a highly accurate profile. Resist patterning conditions Resist Resist solution: SJR-5740 Rotational speed: 5000 rpm Resist thickness: 5 μm Exposure Nikon Stepper NSR-1505 2500 msec Developing Developing solution: 450 Dev

【0007】ついで、メッキにより、厚さ3μmの記録
コア層16’を形成し(図7(a))し、レジスト7を
剥離し(図7(b))、さらに下地層6をエッチングす
る(図7(c))。そしてレジスト7によりコアカバー
を形成し(図7(d))、露出部分のメッキ層(記録コ
ア層)16’を剥離し(図8(a))、さらに下地層6
を湿式エッチングして(図8(b))、レジスト9を剥
離すると、上層記録コア16が完成する(図8
(c))。
Next, a recording core layer 16 'having a thickness of 3 μm is formed by plating (FIG. 7A), the resist 7 is peeled off (FIG. 7B), and the underlying layer 6 is etched (FIG. 7B). FIG. 7 (c)). Then, a core cover is formed with the resist 7 (FIG. 7D), and the exposed portion of the plating layer (recording core layer) 16 'is peeled off (FIG. 8A).
Is wet-etched (FIG. 8B), and the resist 9 is peeled off to complete the upper recording core 16 (FIG. 8).
(C)).

【0008】[0008]

【発明が解決しようとする課題】MRヘッドで高い記録
密度を達成するためには、上層記録トラック幅をできる
だけ狭くする必要がある。従来は上層記録コアのトラッ
ク幅は前述のようにレジストで形成していた。しかし高
記録密度化により狭トラック化が必須条件となってきた
現在、レジストではトラック幅精度の問題や、オーバー
露光、オーバー現像で記録コア側面が逆台形状に広がる
等の問題があり、1.5μm以下の挟トラックの形成は
大変難しいものがあった。本発明の課題は上層記録コア
のトラック幅は狭くしたMRヘッドを提供することであ
る。
In order to achieve a high recording density with an MR head, it is necessary to make the upper recording track width as narrow as possible. Conventionally, the track width of the upper recording core has been formed of a resist as described above. However, at present, narrow tracks have become indispensable conditions due to the increase in recording density, and resists have problems such as track width accuracy, and problems such as overexposure and overdevelopment that the side surfaces of the recording core spread in an inverted trapezoidal shape. It was very difficult to form a narrow track of 5 μm or less. An object of the present invention is to provide an MR head in which the upper recording core has a narrow track width.

【0009】[0009]

【課題を解決するための手段】本発明の上記課題は次の
構成によって解決される。すなわち、中間シールド上に
上部記録コアを形成したMRヘッドの作製方法であっ
て、中間シールド上にSiO2膜をスパッタし、そのS
iO2膜をRIEイオンエッチングを行い、上部記録コ
ア形成時のトラック幅規制の溝を形成することを特徴と
するMRヘッドの作製方法である。
The above object of the present invention is attained by the following constitution. That is, a manufacturing method of an intermediate shield on MR head forming the upper magnetic core, it was sputtered SiO 2 film on the intermediate shield, the S
This is a method for manufacturing an MR head, wherein RIE ion etching is performed on an iO 2 film to form a groove for regulating a track width when an upper recording core is formed.

【0010】0.5μm程度のSiO2膜の上にCr層
を、望ましくは10nm〜20nmの厚みでスパッタ
し、SiO2膜のRIEイオンエッチング時に当該Cr
層をマスキング層とすることが望ましい。
On a SiO 2 film of about 0.5 μm, a Cr layer is sputtered, preferably with a thickness of 10 nm to 20 nm, and the Cr layer is subjected to RIE ion etching of the SiO 2 film.
Preferably, the layer is a masking layer.

【0011】また、前記MRヘッドの作製方法により得
られるプロファイルにメッキにより上部記録コアを形成
することを特徴とするMRヘッドの作製方法も本発明の
範囲内のものである。
[0011] A method for manufacturing an MR head, wherein an upper recording core is formed by plating a profile obtained by the method for manufacturing an MR head, is also within the scope of the present invention.

【0012】上層記録コア部形成のプロセスとしてSi
2膜を使用することに本発明の特徴がある。SiO2
にRIE(リアクティブイオンエッチン)でコアを形成
するが、この際にSiO2膜のRIEに反応しないCr
層によるマスキングを利用することにより、従来のレジ
スト形成法では難しかった、1.5μm以下の挟トラッ
ク幅形成をSiO2をRIEで形成することにより、実
現することができた。これはCr層はSiO2膜のRI
E時に侵されないために、上層記録コアの垂直なプロフ
ァイルが形成でき、高精度なメッキ膜での挟トラック記
録ヘッドを形成することが出来るためである。
As a process for forming the upper recording core portion, Si
The use of an O 2 film is a feature of the present invention. A core is formed on the SiO 2 film by RIE (reactive ion etching). At this time, Cr which does not react to RIE of the SiO 2 film is formed.
By using the masking by the layer, the formation of the narrow track width of 1.5 μm or less, which was difficult by the conventional resist forming method, can be realized by forming SiO 2 by RIE. This is because the Cr layer is an RI of SiO 2 film.
This is because, since the recording layer is not affected at E, a vertical profile of the upper recording core can be formed, and a narrow track recording head with a highly accurate plating film can be formed.

【0013】[0013]

【発明の実施の形態】本発明の実施の形態を図面ととも
に説明する。図1〜図4に示すように上層記録コア16
の挟トラック幅を形成するため、中間シールド1を覆う
Al23膜2上にSiO2を使用し溝形成を行った。S
iO2層3(0.5μm)をRIE(イオンエッチン
グ)で、挟トラック幅にエッチングする。その場合、S
iO2層3の上にRIEに不反応のCr層4を10〜2
0nmスパッタし形成しておく。これにより、プロファ
イルのバラツキ防止を果たし、トラック幅精度の向上が
実現できる。さらに、レジスト5を薄くし(0.8μm
程度)塗布し、さらに、記録コア幅にパターニングを行
いCr層4にSiO2層3をエッチングするための開口
部を形成するとレジスト5の膜厚が薄いため抜けが良
く、垂れ等の問題の発生が防げる。以上のプロセスによ
りできた、記録コアプロファイルに、鍍金にて記録挟ト
ラックを形成する。
Embodiments of the present invention will be described with reference to the drawings. As shown in FIG. 1 to FIG.
In order to form a narrow track width, a groove was formed on the Al 2 O 3 film 2 covering the intermediate shield 1 by using SiO 2 . S
The iO 2 layer 3 (0.5 μm) is etched to a narrow track width by RIE (ion etching). In that case, S
The Cr layer 4 which is not reactive to RIE is formed on the SiO 2 layer 3 by 10 to 2 times.
It is formed by sputtering 0 nm. As a result, variations in the profile can be prevented, and the accuracy of the track width can be improved. Further, the resist 5 is thinned (0.8 μm
When coating and patterning the recording core width to form an opening for etching the SiO 2 layer 3 in the Cr layer 4, the resist 5 has a small thickness, so that the resist 5 is easily removed and causes problems such as dripping. Can prevent. A recording track is formed by plating on the recording core profile formed by the above process.

【0014】図1〜図4はABS(air beari
ng surface)面から見た断面図により上層記
録コア16の作製プロセスの詳細を示す。まず、図1
(a)に示すように中間シールド1上にAl23層2を
形成後、SiO2層3をスパッタ(0.5μm)し、さ
らに図1(b)に示すようにSiO2層3の上にRIE
に反応しないCr層4(10〜20μm)をスパッタに
より形成し、これにより垂直なプロファイルを形成す
る。次いで、Cr層4にSiO2層をエッチングするた
めの開口部を作るために以下に示す条件でレジストパタ
ーニングを行う(図1(c))。このときのレジスト4
の膜厚は、これを抜き易くするために0.8μm程度に
薄くしておく。 レジストパターニング条件 レジスト レジスト液:AZ−6108 回転数:4000rpm レジスト厚:0.8μm 露光 ニコンステッパーG3 200msec 現像 現像液:AZ−600MIF
FIGS. 1 to 4 show an ABS (air beari).
The details of the manufacturing process of the upper recording core 16 are shown in a cross-sectional view as viewed from an ng surface) surface. First, FIG.
After forming the Al 2 O 3 layer 2 on the intermediate shield 1 (a), the SiO 2 layer 3 by sputtering (0.5 [mu] m), further SiO 2 layer 3 as shown in FIG. 1 (b) RIE on top
A Cr layer 4 (10 to 20 μm) which does not react with the above is formed by sputtering, thereby forming a vertical profile. Next, in order to form an opening in the Cr layer 4 for etching the SiO 2 layer, resist patterning is performed under the following conditions (FIG. 1C). Resist 4 at this time
The film thickness is set to be as thin as about 0.8 μm in order to easily remove the film. Resist patterning conditions Resist Resist solution: AZ-6108 Rotational speed: 4000 rpm Resist thickness: 0.8 μm Exposure Nikon Stepper G3 200 msec Developing Developing solution: AZ-600MIF

【0015】次に図1(d)に示すようにCr層4をイ
オンエッチングしてSiO2層3のRIEイオンエッチ
ング時の開口部を形成する。Cr層4の開口部からSi
2層3をRIE(イオンエッチング)して、コアプロ
ファイルを形成する(図2(a))。
Next, as shown in FIG. 1D, the Cr layer 4 is ion-etched to form an opening in the SiO 2 layer 3 during RIE ion etching. Si from the opening of the Cr layer 4
The O 2 layer 3 is subjected to RIE (ion etching) to form a core profile (FIG. 2A).

【0016】次に、図2(b)に示すようにレジスト5
を剥離し、下地スパッタ(Cr/Ti/NiFe)層6
を形成する(図2(c))。この下地スパッタ層6の溝
部の幅が上部記録コア層16’のトラック幅になるが、
図2(a)でのSiO2層3のRIE時にCr層4は侵
されないので、下地スパッタ層6の溝部は垂直な溝を形
成しているため、上部記録コア16のトラック幅になる
当該下地スパッタ層6の溝部により上層記録コア層1
6’の垂直なプロファイルが形成できる。
Next, as shown in FIG.
Is peeled off, and the underlying sputter (Cr / Ti / NiFe) layer 6 is removed.
Is formed (FIG. 2C). The width of the groove of the underlayer sputter layer 6 becomes the track width of the upper recording core layer 16 '.
Since the Cr layer 4 is not attacked during the RIE of the SiO 2 layer 3 in FIG. 2A, the groove of the underlayer sputtered layer 6 forms a vertical groove, so that the underlayer becomes the track width of the upper recording core 16. The upper recording core layer 1 is formed by the grooves of the sputter layer 6.
A 6 'vertical profile can be formed.

【0017】この下地スパッタ層6上にレジスト7によ
りフレーム(4μm)を形成する(図2(d))。そし
て、図3(a)に示すように記録コア16用のメッキ層
16’を3μm厚さで形成し、レジスト7を剥離し(図
3(b))、さらに下地層5をエッチングする(図3
(c))。そしてレジスト9によりコアカバーを形成し
(図3(d))、露出部分のメッキ層(記録コア層)1
6’を剥離し(図4(a))、さらに下地層5とCr層
4を湿式エッチングして(図4(b))、レジスト9を
剥離すると、上層記録コア16が完成する(図4
(c))。
A frame (4 μm) is formed on the underlying sputtered layer 6 by a resist 7 (FIG. 2D). Then, as shown in FIG. 3A, a plating layer 16 ′ for the recording core 16 is formed with a thickness of 3 μm, the resist 7 is peeled off (FIG. 3B), and the underlying layer 5 is etched (FIG. 3B). 3
(C)). Then, a core cover is formed with the resist 9 (FIG. 3D), and the exposed portion of the plating layer (recording core layer) 1 is formed.
6 'is peeled off (FIG. 4A), the underlayer 5 and the Cr layer 4 are wet-etched (FIG. 4B), and the resist 9 is peeled off to complete the upper recording core 16 (FIG. 4).
(C)).

【0018】[0018]

【発明の効果】本発明によれば、上層記録コアのトラッ
ク幅は狭くしたMRヘッドが得られる。
According to the present invention, an MR head in which the track width of the upper recording core is reduced can be obtained.

【図面の簡単な説明】[Brief description of the drawings]

【図1】 本発明の一実施例のMRヘッドの作製方法を
示す。
FIG. 1 shows a method for manufacturing an MR head according to one embodiment of the present invention.

【図2】 本発明の一実施例のMRヘッドの作製方法を
示す。
FIG. 2 shows a method of manufacturing an MR head according to one embodiment of the present invention.

【図3】 本発明の一実施例のMRヘッドの作製方法を
示す。
FIG. 3 shows a method of manufacturing an MR head according to one embodiment of the present invention.

【図4】 本発明の一実施例のMRヘッドの作製方法を
示す。
FIG. 4 shows a method for manufacturing an MR head according to one embodiment of the present invention.

【図5】 典型的なMRヘッドの斜視図を示す。FIG. 5 shows a perspective view of a typical MR head.

【図6】 従来のMRヘッドの作製方法を示す。FIG. 6 shows a method for manufacturing a conventional MR head.

【図7】 従来のMRヘッドの作製方法を示す。FIG. 7 shows a method for manufacturing a conventional MR head.

【図8】 従来のMRヘッドの作製方法を示す。FIG. 8 shows a method for manufacturing a conventional MR head.

【符号の説明】[Explanation of symbols]

1 中間シールド 2 Al23膜 3 SiO2層 4 Cr層 5、7、9 レジスト 8 MR素子 6 下地スパッタ(Cr/Ti/NiFe)層 16’ 記録コア層 16 記録コアREFERENCE SIGNS LIST 1 intermediate shield 2 Al 2 O 3 film 3 SiO 2 layer 4 Cr layer 5, 7, 9 resist 8 MR element 6 underlayer sputter (Cr / Ti / NiFe) layer 16 ′ recording core layer 16 recording core

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 中間シールド上に上部記録コアを形成し
たMRヘッドの作製方法であって、中間シールド上にS
iO2膜をスパッタし、そのSiO2膜をRIEイオンエ
ッチングを行い、上部記録コア形成時のトラック幅規制
の溝を形成することを特徴とするMRヘッドの作製方
法。
1. A method for manufacturing an MR head having an upper recording core formed on an intermediate shield, comprising:
A method of manufacturing an MR head, comprising sputtering an iO 2 film and performing RIE ion etching on the SiO 2 film to form a groove for regulating a track width when an upper recording core is formed.
【請求項2】 SiO2膜の上にCr層をスパッタし、
SiO2膜のRIEイオンエッチング時に当該Cr層を
マスキング層とすることを特徴とする請求項1記載のM
Rヘッドの作製方法。
2. A sputtered Cr layer on the SiO 2 film,
2. The M layer according to claim 1, wherein the Cr layer is used as a masking layer during RIE ion etching of the SiO 2 film.
How to make an R head.
【請求項3】 請求項1記載のMRヘッドの作製方法に
より得られるプロファイルにメッキにより上部記録コア
を形成することを特徴とするMRヘッドの作製方法。
3. A method for manufacturing an MR head, comprising forming an upper recording core by plating on a profile obtained by the method for manufacturing an MR head according to claim 1.
JP9426197A 1997-04-14 1997-04-14 Manufacturing method for mr head Pending JPH10289415A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9426197A JPH10289415A (en) 1997-04-14 1997-04-14 Manufacturing method for mr head

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9426197A JPH10289415A (en) 1997-04-14 1997-04-14 Manufacturing method for mr head

Publications (1)

Publication Number Publication Date
JPH10289415A true JPH10289415A (en) 1998-10-27

Family

ID=14105350

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9426197A Pending JPH10289415A (en) 1997-04-14 1997-04-14 Manufacturing method for mr head

Country Status (1)

Country Link
JP (1) JPH10289415A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100338205B1 (en) * 1998-10-23 2002-05-27 사또시 기꾸야 Top surface imaging technique for top pole tip width control in magnetoresistive read/write head processing

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100338205B1 (en) * 1998-10-23 2002-05-27 사또시 기꾸야 Top surface imaging technique for top pole tip width control in magnetoresistive read/write head processing

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