JPH10287936A - Gold alloy for forming bump - Google Patents
Gold alloy for forming bumpInfo
- Publication number
- JPH10287936A JPH10287936A JP9098740A JP9874097A JPH10287936A JP H10287936 A JPH10287936 A JP H10287936A JP 9098740 A JP9098740 A JP 9098740A JP 9874097 A JP9874097 A JP 9874097A JP H10287936 A JPH10287936 A JP H10287936A
- Authority
- JP
- Japan
- Prior art keywords
- bonding
- gold alloy
- gold
- wire
- total
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01004—Beryllium [Be]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0102—Calcium [Ca]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01039—Yttrium [Y]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01044—Ruthenium [Ru]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01046—Palladium [Pd]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/011—Groups of the periodic table
- H01L2924/01105—Rare earth metals
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は半導体素子の電極と
外部電極とを接続するバンプに用いる金合金に関する。The present invention relates to a gold alloy used for a bump connecting an electrode of a semiconductor device and an external electrode.
【０００２】[0002]
【従来の技術】最近、電子機器の小型化、高機能化に伴
い、それに使用される半導体装置においても小型化、高
機能化の要求が増えてきている。2. Description of the Related Art Recently, as electronic devices have become smaller and more sophisticated, demands for smaller and more sophisticated semiconductor devices have been increasing.
【０００３】従来、半導体装置内部における半導体素子
の電極と外部電極との間の電気的接続は、金等のワイヤ
を用いるワイヤボンディング法が広く使われてきた。Conventionally, for electrical connection between an electrode of a semiconductor element and an external electrode inside a semiconductor device, a wire bonding method using a wire such as gold has been widely used.
【０００４】近年、半導体装置の小型化・高機能化が要
求が増え、装置内部の半導体素子においても、接合ピッ
チの微細化や高速動作化が必要になってきている。[0004] In recent years, there has been an increasing demand for miniaturization and high performance of semiconductor devices, and it has become necessary for semiconductor elements inside the devices to have finer junction pitches and higher speed operation.
【０００５】そのため、従来のワイヤボンディング法で
は接合ピッチの微細化が限界にきていることから、代わ
りにTAB接合、さらにはフリップチップ接合への要求が
強まっている。[0005] For this reason, in the conventional wire bonding method, since the miniaturization of the bonding pitch has reached its limit, the demand for TAB bonding and further flip-chip bonding has been increasing instead.
【０００６】ワイヤボンディング法は半導体素子と外部
電極を金等のワイヤにより接続するが、TAB接合やフリ
ップチップ接合は、半導体素子の電極上や外部電極上に
バンプと呼ばれる突起状の金属電極を形成し半導体素子
と外部電極を接続する。In the wire bonding method, a semiconductor element and an external electrode are connected by a wire such as gold. In TAB bonding and flip chip bonding, a protruding metal electrode called a bump is formed on an electrode of the semiconductor element or on an external electrode. Then, the semiconductor element and the external electrode are connected.
【０００７】このバンプの形成方法には、めっきによる
方法、ワイヤボンディングを利用した方法（いわゆるス
タッドバンプ法）、微小な金属ボールを利用する方法等
があり、バンプの材料としては種々の半田合金及び金等
が用いられている。The method of forming the bumps includes a method using plating, a method using wire bonding (so-called stud bump method), a method using fine metal balls, and the like. Gold or the like is used.
【０００８】これらの金属の中で、金の微小ボールを用
いてバンプを形成する方法は、半田合金と比較し、バン
プの微細化を達成しやすいこと、一括接合（いわゆるギ
ャングボンド）が可能なこと、電気的特性が半田合金よ
り良好であること等のメリットがある。[0008] Among these metals, the method of forming bumps using gold micro-balls is easier to achieve miniaturization of bumps than solder alloys, and enables batch bonding (so-called gang bonding). In addition, there are advantages such as better electrical characteristics than solder alloys.
【０００９】バンプに使う微小金ボールには、大きさが
均一であること、表面に接合の障害となるような皮膜が
存在しないこと、接合時にバンプ間の不均一なつぶれに
よる接触が起きないこと、長期間の使用によっても接合
部の劣化が起らないこと等の特性が要求される。[0009] The minute gold balls used for the bumps must be uniform in size, have no coating on the surface that may interfere with bonding, and must not cause uneven contact between bumps during bonding. In addition, characteristics such that the joint does not deteriorate even after long-term use are required.
【００１０】しかしながら、微小金ボールを作成するの
には、金の極細線を製造し、その極細線を均一な長さに
切断後、加熱溶融してボールを形成しなければならない
が、金が99.99重量％（以下単に％と記す）以上のいわ
ゆる純金を用いた場合には、強度と耐熱性が低いため、
あまり細い線を得ることができず、切断長のバラツキの
影響を強く受けるため、ボールサイズのバラツキが大き
かった。またボールが柔らかいため、不均一に潰れるこ
とが多く、バンプ間の接触が起こりやすいという問題が
あった。However, in order to produce minute gold balls, it is necessary to produce ultrafine gold wires, cut the ultrafine wires into uniform lengths, and heat and melt them to form balls. When 99.99% by weight (hereinafter simply referred to as “%”) or more of so-called pure gold is used, since strength and heat resistance are low,
Since a very thin line could not be obtained, and the length of the ball was greatly affected by the variation in the cutting length, the variation in the ball size was large. Further, since the ball is soft, it is often crushed unevenly, and there is a problem that contact between bumps is likely to occur.
【００１１】[0011]
【発明が解決しようとする課題】本発明の目的は、かか
る点に鑑み、接合時の不均一な潰れによるバンプ問の接
触が少なく、微細なバンプを形成するのに好適な微小ボ
ールを作成するための極細線が容易に製造できる金合金
を提供することを課題とする。SUMMARY OF THE INVENTION In view of the foregoing, it is an object of the present invention to provide a fine ball suitable for forming a fine bump, which has less contact between bumps due to uneven crushing at the time of bonding. It is an object of the present invention to provide a gold alloy that can easily produce an extra fine wire for the purpose.
【００１２】[0012]
【課題を解決するための手段】上記の目的を達成する為
に、本発明の第1の微小ボール用金合金は、Pt，Pd，Ru
の1種以上を合計で0.001〜5％含み、残部がAu及び不可
避不純物からなる点に特徴がある。また、第2の微小ボ
ール用金合金は、Pt，Pd，Ruの1種以上を合計で0.001〜
5％含み，さらにCa，Be，Ge，Y，希土顆元素の内1種以
上を合計で0.0001〜0.003％含み，残部がAu及び不可避
不純物からなることを特徴とする。In order to achieve the above object, a first gold alloy for micro balls of the present invention comprises Pt, Pd, and Ru.
Is characterized in that at least one of the above is contained in a total of 0.001 to 5%, with the balance being Au and unavoidable impurities. In addition, the second gold alloy for minute balls contains at least one of Pt, Pd, and Ru in a total amount of 0.001 to
5%, further contains at least one of Ca, Be, Ge, Y, and rare earth condyle elements in a total amount of 0.0001 to 0.003%, with the balance being Au and unavoidable impurities.
【００１３】[0013]
【発明の実施の形態】以下に本発明の構成の詳細につい
て説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The details of the configuration of the present invention will be described below.
【００１４】本発明の元素であるPt，Pd，Ruを添加する
ことにより、純金よりも強度と耐熱性を向上させること
によって、極細線を容易に製造することを可能とし、そ
の結果として均一な大きさの微細ボールが得やすくな
る。By adding Pt, Pd, and Ru, which are the elements of the present invention, it is possible to easily manufacture an ultrafine wire by improving the strength and heat resistance as compared with pure gold, and as a result, it is possible to obtain a uniform wire. Fine balls of a size can be easily obtained.
【００１５】また、Pt，Pd，Ruは形成されるボールの結
晶粒微細化と硬度向上の効果を有し、その結果接合時の
不均一な潰れによるバンプ問の接触が防止できる。Further, Pt, Pd, and Ru have the effect of reducing the crystal grain size and improving the hardness of the ball to be formed. As a result, contact between bumps due to uneven crushing at the time of joining can be prevented.
【００１６】さらに、Pt，Pd，Ruは半導体素子上のアル
ミニウム電極に対し、接合の信頼性を向上する働きも有
する。Further, Pt, Pd, and Ru also have a function of improving the reliability of bonding to the aluminum electrode on the semiconductor element.
【００１７】Pt，Pd，Ruの濃度を1種以上で0.001％〜5
％としたのは、0.001％未満では上記効果が不十分であ
り、5％を越すとボールが硬くなりすぎて接合性に不具
合が生じるからである。The concentration of Pt, Pd, Ru is at least one of 0.001% to 5%.
The reason for setting the percentage is that if the content is less than 0.001%, the above effect is insufficient, and if the content exceeds 5%, the ball becomes too hard and the bonding property is poor.
【００１８】第2の発明におけるCa，Be，Ge，Y，希土類
元素は、Pt，Pd，Ruとの相乗効果により、さらに合金の
強度と耐熱性を向上する働きを有する。In the second invention, Ca, Be, Ge, Y and rare earth elements have a function of further improving the strength and heat resistance of the alloy by a synergistic effect with Pt, Pd and Ru.
【００１９】そのため、更なる細線化が可能になり、そ
の結果ボールサイズの均一化、及び縮小化に効果があ
り、より微細接合ピッチの半導体素子にも対応できる。As a result, it is possible to further reduce the thickness of the wire, and as a result, it is effective to make the ball size uniform and to reduce the size of the ball.
【００２０】Ca，Be，Ge，Y，希土類元素の濃度を1種以
上で0.0001〜0.003％としたのは、0.0001％未満では上
記効果が不十分であり、逆に0.003％を越えるとボール
形成時にボール表面に上記元素の酸化皮膜が形成されて
接合性が低下するからである。The reason why the concentration of Ca, Be, Ge, Y, or rare earth element is set to 0.0001 to 0.003% for one or more kinds is that if the concentration is less than 0.0001%, the above effect is insufficient. This is because an oxide film of the above element is sometimes formed on the ball surface, and the bonding property is reduced.
【００２１】なお，本発明において，不可避不純物とし
て0.003％程度以下のSr，Ba，Ga，In，Sn，Fe，Ni，C
o，Cu，Agが含まれることは何ら差し支えがない。In the present invention, Sr, Ba, Ga, In, Sn, Fe, Ni, and C of about 0.003% or less as unavoidable impurities.
There is no problem that o, Cu, and Ag are contained.
【００２２】[0022]
【実施例】純度99.99％の高純度金、及びPt，Pd，Ru，C
a，Be，Ge，Y，希土類元素を1〜20％含む金母合金を用
いて、第1表の試料No1〜10示す組成の金合金を溶解鋳造
した。得られた鋳塊は、溝ロール加工を施した後に、ダ
イヤモンドダイスを用いて伸線し、直径18μmの金合金
線を得た。[Example] High purity gold of 99.99% purity and Pt, Pd, Ru, C
Using gold mother alloys containing 1 to 20% of a, Be, Ge, Y, and rare earth elements, gold alloys having compositions shown in Samples 1 to 10 in Table 1 were melt-cast. The obtained ingot was subjected to groove roll processing, and then drawn using a diamond die to obtain a gold alloy wire having a diameter of 18 μm.
【００２３】金合金線の評価としては、引っ張り試験に
より、ワイヤ強度を測定した。また、得られた金合金線
を所定の長さに切断し、電気炉中に保持した黒鉛製のト
レー上で加熱することにより粒径バラツキの少ない直径
50μmのボールが得られた。For evaluation of the gold alloy wire, the wire strength was measured by a tensile test. In addition, the obtained gold alloy wire is cut into a predetermined length, and heated on a graphite tray held in an electric furnace, so that the diameter of the wire has a small particle size variation.
A 50 μm ball was obtained.
【００２４】上記方法により得られたボールの評価とし
て接合試験を実施した。接合試験は、アルミニウム電極
ピッチが100μmの模凝チップを用い、電極上にボールを
設置し、その上に金めっきを施したTABテープのリード
を載せた状態において、シングルポイントボンダーによ
って平均のボール潰れ径が約90μmになるようにリード
側より荷重と超音波を付加することによって行なった。A bonding test was performed to evaluate the balls obtained by the above method. In the bonding test, an average ball was crushed by a single point bonder with a ball placed on the electrode and a gold-plated TAB tape lead placed on the electrode using a miniaturized chip with an aluminum electrode pitch of 100 μm. The test was performed by applying a load and ultrasonic waves from the lead side so that the diameter became about 90 μm.
【００２５】接合試験後の試料は、引き剥がし試験によ
って接合強度を、電気抵抗測定によって電気的接合性を
調査した。また、接合信頼性は接合試験後の試料を200
℃で1000時間保持した後に引き剥がし試験を行なうこと
によって評価した。The samples after the bonding test were examined for the bonding strength by a peeling test and the electrical bonding by electrical resistance measurement. In addition, the joint reliability was 200
It was evaluated by performing a peeling test after holding at 1000C for 1000 hours.
【００２６】評価の結果、本発明による、微細ボール用
金合金は、ワイヤー伸線中の断線も少なく、良好な伸線
結果が得られた。また、ワイヤー強度、接合強度、電気
的接合性についても良好な結果が得られた。As a result of the evaluation, the gold alloy for fine balls according to the present invention showed few breaks during wire drawing, and good wire drawing results were obtained. Good results were also obtained for wire strength, bonding strength, and electrical bondability.
【００２７】（比較例１）実施例と同様にして、第１表
の試料No11〜13に示す金合金を溶解鋳造し、実施例と同
様の方法で試験を実施したところ、ワイヤー伸線中の断
線も少なく、ワイヤ強度も得られるが、接合強度及び電
気的接合性が劣化することが確認できた。Comparative Example 1 Gold alloys shown in Samples Nos. 11 to 13 in Table 1 were melt-cast and subjected to a test in the same manner as in the example. Although there was little disconnection and wire strength was obtained, it was confirmed that the bonding strength and the electrical bonding were deteriorated.
【００２８】（比較例２）何も添加しない99.999％の金
を用いて、実施例と同様の方法で伸線加工を施したとこ
ろ、伸線途中で断線が多発し、18μｍφの線材が得られ
なかった。(Comparative Example 2) When wire drawing was performed in the same manner as in the example using 99.999% of gold to which nothing was added, breakage occurred frequently during drawing, and a wire rod of 18 µmφ was obtained. Did not.
【００２９】試験実施のためのワイヤーが得られなかっ
たため評価には加えていない。Since a wire for performing the test was not obtained, it was not included in the evaluation.
【００３０】以上の結果から、第1表において明らかな
ように、本発明による金合金は、比較材と比べて良好な
接合性及び接合信頼性を示すことが確認できた。From the above results, it was confirmed that the gold alloy according to the present invention exhibited better bonding properties and bonding reliability than the comparative material, as is clear from Table 1.
【００３１】[0031]
【表１】 （注）電気的接合性については不接続不良（オープン不
良）もしくは隣の電極との接続不良（ショート不良）が
発生しなかった場合を良、発生した場合を不良とした。[Table 1] (Note) Regarding the electrical connection property, the case where no disconnection failure (open failure) or the failure of connection with the adjacent electrode (short failure) did not occur was evaluated as good, and the case where it occurred was evaluated as poor.
【００３２】[0032]
【発明の効果】以上から明らかなように、本発明のバン
プ形成用金合金を使用することにより、極細線が容易に
製造でき、さらに接合時の潰れ過ぎや不均一な潰れによ
るバンプ問の接触が防止できる微細なバンプを形成する
のに好適な微小ボール用の金合金を得ることができた。As is apparent from the above description, by using the gold alloy for forming a bump of the present invention, a very fine wire can be easily manufactured, and furthermore, the contact between bumps due to excessive crushing or uneven crushing at the time of joining is obtained. It was possible to obtain a gold alloy for fine balls suitable for forming fine bumps capable of preventing cracks.
Claims (2)
重量％含み、残部がAuおよび不可避不純物からなること
を特徴とするバンプ形成用金合金。1. A total of 0.001 to 5 of at least one of Pt, Pd, and Ru.
A gold alloy for forming bumps, wherein the alloy contains Au and unavoidable impurities in the balance.
重量％含み、さらにCa，Be，Ge，Y，希土類元素の内の1
種以上を合計で0.0001〜0.003重量％含み、残部がAu及
び不可避不純物からなることを特徴とするバンプ形成用
金合金。2. A total of 0.001 to 5 of at least one of Pt, Pd, and Ru.
% Of Ca, Be, Ge, Y, and rare earth elements
A gold alloy for forming bumps, comprising at least 0.0001 to 0.003% by weight of a total of at least one species and the balance consisting of Au and unavoidable impurities.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9098740A JPH10287936A (en) | 1997-04-16 | 1997-04-16 | Gold alloy for forming bump |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9098740A JPH10287936A (en) | 1997-04-16 | 1997-04-16 | Gold alloy for forming bump |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH10287936A true JPH10287936A (en) | 1998-10-27 |
Family
ID=14227892
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9098740A Pending JPH10287936A (en) | 1997-04-16 | 1997-04-16 | Gold alloy for forming bump |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH10287936A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009218442A (en) * | 2008-03-11 | 2009-09-24 | Tanaka Electronics Ind Co Ltd | Semiconductor device |
-
1997
- 1997-04-16 JP JP9098740A patent/JPH10287936A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009218442A (en) * | 2008-03-11 | 2009-09-24 | Tanaka Electronics Ind Co Ltd | Semiconductor device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5399581B1 (en) | High speed signal bonding wire | |
| JPS6238414B2 (en) | ||
| JP5420783B1 (en) | Bonding wire for high-speed signal lines | |
| EP2461358A1 (en) | Bonding wire for semiconductor | |
| WO2012169067A1 (en) | High-strength, high-elongation-percentage gold alloy bonding wire | |
| JP2737953B2 (en) | Gold alloy wire for gold bump | |
| JPH0216580B2 (en) | ||
| JPH10326803A (en) | Gold and silver alloy thin wire for semiconductor element | |
| JPH10287936A (en) | Gold alloy for forming bump | |
| JPH11186314A (en) | Bonding wire | |
| JP3329286B2 (en) | Gold alloy wires for bonding semiconductor devices | |
| JP2778093B2 (en) | Gold alloy wire for gold bump | |
| JPH1167811A (en) | Gold and silver alloy thin wire for semiconductor device | |
| JPH11126788A (en) | Ic-chip connecting gold alloy wire | |
| JP5166738B2 (en) | Gold wire for semiconductor element connection | |
| CN111656501A (en) | Bonding wire | |
| JPH0464121B2 (en) | ||
| JP2773202B2 (en) | Au alloy extra fine wire for semiconductor element bonding | |
| JP6898705B2 (en) | Copper alloy thin wire for ball bonding | |
| JPH06112252A (en) | Pt-alloy extrafine wire for semiconductor element | |
| JP3689234B2 (en) | Micro gold ball for bump and semiconductor device | |
| JPH1145901A (en) | Bonding wire | |
| JPH1145902A (en) | Bonding wire | |
| JP3091076B2 (en) | Small gold balls for bumps | |
| JP3426397B2 (en) | Gold alloy fine wire for semiconductor devices |