JPH10283891A - Thermal fuse material and electronic part using thereof - Google Patents
Thermal fuse material and electronic part using thereofInfo
- Publication number
- JPH10283891A JPH10283891A JP9190797A JP9190797A JPH10283891A JP H10283891 A JPH10283891 A JP H10283891A JP 9190797 A JP9190797 A JP 9190797A JP 9190797 A JP9190797 A JP 9190797A JP H10283891 A JPH10283891 A JP H10283891A
- Authority
- JP
- Japan
- Prior art keywords
- film
- glass powder
- thermal fuse
- electronic part
- fuse material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Landscapes
- Thermistors And Varistors (AREA)
- Fuses (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、温度ヒューズ材料
及びそれを用いた電子部品に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thermal fuse material and an electronic component using the same.
【0002】[0002]
【従来の技術】従来の電子部品においては、それに過電
流が流れると温度上昇が起こり、これを安全な状態で通
電を絶たなければならないという問題があった。2. Description of the Related Art In a conventional electronic component, there has been a problem that when an overcurrent flows through the electronic component, a temperature rise occurs, and it is necessary to cut off the power supply in a safe state.
【0003】[0003]
【発明が解決しようとする課題】そこで従来は、この電
子部品に別個に温度ヒューズ部品を直列に接続するなど
の対策をとっていたが、別個に温度ヒューズ部品を用い
ると高価になるとともに、大型化してしまうという問題
があった。そこで本発明はこれらの問題、即ち高価にな
る、大型化するという問題を改善することを目的とする
ものである。Conventionally, measures have been taken such as connecting a thermal fuse component to the electronic component separately in series. However, the use of a separate thermal fuse component is expensive and large. There was a problem that would be. Therefore, an object of the present invention is to solve these problems, that is, problems of becoming expensive and increasing in size.
【0004】[0004]
【課題を解決するための手段】この目的を達成するた
め、本発明はガラス粉末の表面を樹脂膜で覆った後、更
にその表面に金属膜を形成した温度ヒューズ材料を電子
部品の電極面に形成するものである。この温度ヒューズ
材料はガラス粉末が溶融する温度に達すると、その表面
を覆った樹脂膜は熱的に分解、またはガラス成分と反応
破壊される。次に、溶融したガラスは更にその表面の金
属膜と反応し、金属膜の導電性を断つ、このため温度ヒ
ューズ材料は実質的に絶縁化することになる。従って電
子部品にその後の通電は絶たれ安全なものとなる。In order to achieve this object, the present invention covers the surface of a glass powder with a resin film, and further applies a thermal fuse material having a metal film formed on the surface to the electrode surface of an electronic component. To form. When the temperature of the thermal fuse material reaches a temperature at which the glass powder melts, the resin film covering the surface thereof is thermally decomposed or decomposed by reaction with the glass component. The molten glass then reacts further with the metal film on its surface, breaking the conductivity of the metal film, thereby substantially insulating the thermal fuse material. Therefore, the energization of the electronic component thereafter is cut off, and the electronic component becomes safe.
【0005】[0005]
【発明の実施の形態】本発明の請求項1に記載の発明
は、ガラス粉末の表面を樹脂膜で覆った後、更にその表
面を金属膜で覆った温度ヒューズ材料である。ガラス粉
末の表面を樹脂膜で覆うのは、ガラス粉末の表面を樹脂
で覆うことによって、次にその表面に金属膜を形成する
際に強酸、強アルカリ性のメッキ液を用いてもガラス粉
末と反応することを防止することができるため、メッキ
液の選定及び形成条件の制約を少なくすることができ
る。DESCRIPTION OF THE PREFERRED EMBODIMENTS The invention according to claim 1 of the present invention is a thermal fuse material in which the surface of a glass powder is covered with a resin film and then the surface is further covered with a metal film. The surface of the glass powder is covered with a resin film because the surface of the glass powder is covered with a resin so that it can react with the glass powder even when a strong acid or strong alkaline plating solution is used to form a metal film on the surface. Therefore, the selection of the plating solution and the restrictions on the forming conditions can be reduced.
【0006】本発明の請求項2に記載の発明は、ガラス
粉末の表面に形成する樹脂膜成分をシリコン樹脂とする
ものである。シリコン樹脂は耐酸、耐アルカリ性に優
れ、尚かつ溶媒等で希釈することができるためガラス粉
末表面に必要厚さの薄膜を容易に形成することができ
る。According to a second aspect of the present invention, the resin film component formed on the surface of the glass powder is a silicon resin. Silicon resin is excellent in acid resistance and alkali resistance and can be diluted with a solvent or the like, so that a thin film having a required thickness can be easily formed on the surface of glass powder.
【0007】本発明の請求項3に記載の発明は、電子部
品の電極上に請求項1,2の内いずれか一つの温度ヒュ
ーズ材料で温度ヒューズ層を形成した電子部品である。
この構成によれば通常時においては、ガラス粉末表面の
金属膜によって十分な導電性が確保される。しかし前記
電子部品がガラス粉末が溶融するような異常高温に曝さ
れると、その表面の樹脂膜は熱的に分解、または溶融し
たガラスと反応し、樹脂膜が破壊される。次に溶融した
ガラスは更にその表面の金属膜と反応し金属膜を絶縁化
することによって、前記電子部品へそれ以降の通電を断
ち安全性を高めることができるものである。According to a third aspect of the present invention, there is provided an electronic component in which a temperature fuse layer is formed on an electrode of the electronic component by using the thermal fuse material according to any one of the first and second aspects.
According to this configuration, under normal circumstances, sufficient conductivity is ensured by the metal film on the surface of the glass powder. However, when the electronic component is exposed to an abnormally high temperature at which the glass powder melts, the resin film on the surface thereof thermally decomposes or reacts with the molten glass, and the resin film is destroyed. Next, the melted glass further reacts with the metal film on the surface thereof to insulate the metal film, so that the energization of the electronic component can be cut off thereafter to enhance the safety.
【0008】(実施の形態1)以下、本発明の一実施形
態を説明する。(Embodiment 1) An embodiment of the present invention will be described below.
【0009】図1は本発明の温度ヒューズ材の断面を示
す図である。図1において、1はPbOが85wt%、
B2O3が10wt%、SiO2が5wt%の組成から成
る低融点ガラス粉末であり、その表面をシリコン樹脂膜
2、Cu膜3、及びSn膜4で層状に覆っている。FIG. 1 is a view showing a cross section of a thermal fuse material of the present invention. In FIG. 1, 1 is 85% by weight of PbO,
B 2 O 3 is a low melting glass powder having a composition of 10 wt% and SiO 2 of 5 wt%, and the surface thereof is covered with a silicon resin film 2, a Cu film 3 and a Sn film 4 in a layered manner.
【0010】低融点ガラス粉末1は一般に強酸、強アル
カリ性の溶液に溶出する。このため前記Cu膜3を形成
するメッキ工程において、pH8〜9のメッキ液を用い
るとガラス表面にCu膜3の形成は可能であるが、所定
のCu膜3の膜厚を得るためには長時間を要する。一方
メッキ液の濃度を高くしてpH12〜13の強アルカリ
性のメッキ液を用いると短時間で所定膜厚のCu膜3を
形成することができるが、低融点ガラス粉末1の表面が
溶出してしまいCu膜3を形成することができない。The low-melting glass powder 1 generally elutes into a strong acid or strong alkaline solution. Therefore, in the plating step of forming the Cu film 3, if a plating solution having a pH of 8 to 9 is used, the Cu film 3 can be formed on the glass surface. Takes time. On the other hand, when the concentration of the plating solution is increased and a strongly alkaline plating solution having a pH of 12 to 13 is used, the Cu film 3 having a predetermined thickness can be formed in a short time, but the surface of the low melting point glass powder 1 is eluted. As a result, the Cu film 3 cannot be formed.
【0011】そこで本実施形態では、PbOが85wt
%、B2O3が10wt%、SiO2が5wt%の組成か
ら成る低融点ガラス粉末1の表面に、先ず強酸、強アル
カリ性のメッキ液に耐えうるシリコン樹脂膜2を形成し
た後、その表面に化学メッキ法でCu膜3を形成し、更
に置換メッキでSn膜4を形成して温度ヒューズ材料を
完成した。Therefore, in this embodiment, PbO is 85 wt.
%, B 2 O 3 is 10 wt%, and SiO 2 is 5 wt%. On the surface of the low melting point glass powder 1, first, a silicon resin film 2 which can withstand a strong acid and a strongly alkaline plating solution is formed, and then the surface is formed. Then, a Cu film 3 was formed by a chemical plating method, and a Sn film 4 was further formed by displacement plating to complete a thermal fuse material.
【0012】次に前記温度ヒューズ材料を用いた電子部
品について説明する。図2は本発明の電子部品の断面図
であり、図2において、5はZnOを主成分とし、副成
分としてBi2O3,Co2O3,MnO2などを含むバリ
スタ素子である。そのバリスタ素子5の両主平面に電極
6a,6bを設け、その電極6a上に前記温度ヒューズ
材料にロジン及びフラックス成分を混合してペースト状
に塗布した後、約250℃の温度に加熱し、低融点ガラ
ス表面に形成したSn膜4を溶融させ温度ヒューズ層7
を形成した。次いで端子8を電極6b上の温度ヒューズ
層7の面にハンダ9で接続した後、更に電子部品全体を
エポキシ樹脂10で被覆して電子部品を作製した。Next, an electronic component using the thermal fuse material will be described. FIG. 2 is a cross-sectional view of the electronic component of the present invention. In FIG. 2, reference numeral 5 denotes a varistor element containing ZnO as a main component and Bi 2 O 3 , Co 2 O 3 , MnO 2 and the like as subcomponents. Electrodes 6a and 6b are provided on both main planes of the varistor element 5. After rosin and flux components are mixed with the temperature fuse material and applied on the electrodes 6a in a paste form, the mixture is heated to a temperature of about 250 ° C. The Sn film 4 formed on the surface of the low melting point glass is melted and the temperature fuse layer 7 is formed.
Was formed. Next, after connecting the terminal 8 to the surface of the thermal fuse layer 7 on the electrode 6b with solder 9, the entire electronic component was further covered with an epoxy resin 10 to produce an electronic component.
【0013】バリスタ素子5が異常高電圧等により劣
化、発熱し、低融点ガラス粉末1の溶融温度の約400
℃に達すると、低融点ガラス粉末1が溶融し、まず内層
のシリコン樹脂膜2を破壊し、次いでCu膜3と反応、
引き続いて既に溶融状態にあるSn膜4と反応して導電
性を絶つ。これにより電極6a上に形成した温度ヒュー
ズ層7は絶縁化する。よってそれ以降、劣化したバリス
タ素子5は電流が絶たれ、安全なものとなる。The varistor element 5 deteriorates and generates heat due to an abnormally high voltage or the like, and the melting temperature of the low melting
C., the low-melting glass powder 1 is melted, first destroying the inner silicon resin film 2, and then reacting with the Cu film 3.
Subsequently, it reacts with the Sn film 4 already in a molten state to cut off the conductivity. Thereby, the thermal fuse layer 7 formed on the electrode 6a is insulated. Therefore, thereafter, the current of the deteriorated varistor element 5 is cut off, and it becomes safe.
【0014】尚、本実施形態において、温度ヒューズ層
7を電極6a面に形成したが、電極6a,6bの両面に
設けても良い。また更に温度ヒューズ材料の金属膜はC
u,Snに限るものではなく、Pb,Ni,Pd,A
g,Co等の金属を使用しても良い。Although the thermal fuse layer 7 is formed on the surface of the electrode 6a in this embodiment, it may be provided on both surfaces of the electrodes 6a and 6b. Further, the metal film of the thermal fuse material is C
Not limited to u and Sn, but Pb, Ni, Pd, A
A metal such as g or Co may be used.
【0015】[0015]
【発明の効果】以上、本発明に示すように、低融点ガラ
ス粉末表面を、樹脂層で覆うことにより低融点ガラス粉
末表面上に金属膜を形成する際のメッキ等の制約条件が
軽減することができ、温度ヒューズ材料を容易に生産す
ることができる。また本発明の温度ヒューズ材料を用い
た電子部品は、別個に温度ヒューズ用電子部品を接続す
る必要がないので、廉価かつ小型の温度ヒューズ付き電
子部品を製造することが可能となる。As described above, as shown in the present invention, by covering the surface of the low-melting glass powder with the resin layer, it is possible to reduce the restrictions such as plating when forming a metal film on the surface of the low-melting glass powder. And the thermal fuse material can be easily produced. Further, since the electronic component using the thermal fuse material of the present invention does not need to separately connect the electronic component for thermal fuse, it is possible to manufacture an inexpensive and small-sized electronic component with thermal fuse.
【図1】本発明の一実施形態の温度ヒューズ材料の断面
図FIG. 1 is a cross-sectional view of a thermal fuse material according to an embodiment of the present invention.
【図2】本発明の一実施形態の温度ヒューズ材料を用い
た電子部品の断面図FIG. 2 is a cross-sectional view of an electronic component using the thermal fuse material according to one embodiment of the present invention.
1 低融点ガラス粉末 2 シリコン樹脂膜 3 Cu膜 4 Sn膜 5 バリスタ素子 6a 電極 6b 電極 7 温度ヒューズ層 8 端子 9 ハンダ 10 エポキシ樹脂 DESCRIPTION OF SYMBOLS 1 Low melting glass powder 2 Silicon resin film 3 Cu film 4 Sn film 5 Varistor element 6a electrode 6b electrode 7 Thermal fuse layer 8 Terminal 9 Solder 10 Epoxy resin
Claims (3)
にその表面を金属膜で覆った温度ヒューズ材料。1. A thermal fuse material in which the surface of a glass powder is covered with a resin and then the surface is further covered with a metal film.
載の温度ヒューズ材料。2. The thermal fuse material according to claim 1, wherein the resin is a silicone resin.
ずれか一つの温度ヒューズ材料を設けた電子部品。3. An electronic component having the temperature fuse material according to claim 1, provided on an electrode of the electronic component.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9190797A JPH10283891A (en) | 1997-04-10 | 1997-04-10 | Thermal fuse material and electronic part using thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9190797A JPH10283891A (en) | 1997-04-10 | 1997-04-10 | Thermal fuse material and electronic part using thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH10283891A true JPH10283891A (en) | 1998-10-23 |
Family
ID=14039659
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9190797A Withdrawn JPH10283891A (en) | 1997-04-10 | 1997-04-10 | Thermal fuse material and electronic part using thereof |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH10283891A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011003508A (en) * | 2009-06-22 | 2011-01-06 | Sekisui Chem Co Ltd | Conductive fine particle, anisotropic conductive material, and connection structure |
-
1997
- 1997-04-10 JP JP9190797A patent/JPH10283891A/en not_active Withdrawn
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011003508A (en) * | 2009-06-22 | 2011-01-06 | Sekisui Chem Co Ltd | Conductive fine particle, anisotropic conductive material, and connection structure |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN100461321C (en) | Protective device | |
JP2001325869A (en) | Protective element | |
TWI398894B (en) | Protection element | |
JP3067011B2 (en) | Protection element and method of manufacturing the same | |
JP4110967B2 (en) | Protective element | |
JP3185962B2 (en) | Protection circuit and protection element | |
JP2008311362A (en) | Ceramic electronic component | |
US7173510B2 (en) | Thermal fuse and method of manufacturing fuse | |
JPH10116550A (en) | Protective element and its application method | |
JPH10283891A (en) | Thermal fuse material and electronic part using thereof | |
KR100358302B1 (en) | Negative Temperature Coefficient Thermistor | |
JPH0723863Y2 (en) | Thermal fuse | |
JPH10144191A (en) | Thermal fuse material and electronic component using it | |
JPS6322599Y2 (en) | ||
JPH10335119A (en) | Fuse resistor and electronic device using the resistor | |
CN204167243U (en) | Circuit protecting element | |
JP4303063B2 (en) | Fuse element | |
JPS6322601Y2 (en) | ||
JPH1197214A (en) | Conductive material and electronic parts using the same | |
JPH02244531A (en) | Base board type thermo-fuse and resistance element and manufacture of them | |
JPH1196870A (en) | Temperature fuse, resistor, and manufacture thereof | |
JPS5858703A (en) | Ceramic varistor | |
JP2000150205A (en) | Voltage non-linear resistor | |
JP2001319803A (en) | Nonlinear voltage resistor | |
JP2001043781A (en) | Protective element and manufacture thereof |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A761 | Written withdrawal of application |
Free format text: JAPANESE INTERMEDIATE CODE: A761 Effective date: 20040319 |